CN102315388A - 薄膜晶体管及其制造方法、显示装置及电子设备 - Google Patents
薄膜晶体管及其制造方法、显示装置及电子设备 Download PDFInfo
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- CN102315388A CN102315388A CN2011101815326A CN201110181532A CN102315388A CN 102315388 A CN102315388 A CN 102315388A CN 2011101815326 A CN2011101815326 A CN 2011101815326A CN 201110181532 A CN201110181532 A CN 201110181532A CN 102315388 A CN102315388 A CN 102315388A
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Thin Film Transistor (AREA)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-154779 | 2010-07-07 | ||
| JP2010154779A JP2011077500A (ja) | 2009-09-04 | 2010-07-07 | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器 |
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| CN102315388A true CN102315388A (zh) | 2012-01-11 |
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| CN (1) | CN102315388A (de) |
| DE (1) | DE102011103803A1 (de) |
| TW (1) | TWI463669B (de) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985764A (zh) * | 2014-05-30 | 2014-08-13 | Tcl集团股份有限公司 | 氧化物tft及其制备方法、阵列基板、显示器件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2014056955A (ja) * | 2012-09-13 | 2014-03-27 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに電子機器 |
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| CN1674227A (zh) * | 2004-03-04 | 2005-09-28 | 株式会社半导体能源研究所 | 形成图案的方法，薄膜晶体管，显示设备及制法和应用 |
| CN1694278A (zh) * | 2004-04-29 | 2005-11-09 | 三星Sdi株式会社 | 包含有机受体膜的有机薄膜晶体管 |
| CN1825650A (zh) * | 2004-11-23 | 2006-08-30 | 三星Sdi株式会社 | 有机薄膜晶体管及其制造方法和平板显示器件 |
| CN1905230A (zh) * | 2004-08-04 | 2007-01-31 | 索尼株式会社 | 场效应晶体管 |
| JP2008243911A (ja) * | 2007-03-26 | 2008-10-09 | Nippon Hoso Kyokai <Nhk> | 有機薄膜トランジスタ及びディスプレイ |
| US20090076322A1 (en) * | 2007-09-13 | 2009-03-19 | Atsushi Matsunaga | Capsule endoscope |
| CN101645488A (zh) * | 2008-08-07 | 2010-02-10 | 索尼株式会社 | 有机薄膜晶体管、其制造方法和电子装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208756B2 (en) * | 2004-08-10 | 2007-04-24 | Ishiang Shih | Organic semiconductor devices having low contact resistance |
| KR100658286B1 (ko) * | 2005-08-11 | 2006-12-14 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 이용한 평판표시장치 |
| WO2009075281A1 (ja) * | 2007-12-13 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
| JP5216369B2 (ja) | 2008-02-29 | 2013-06-19 | 電源開発株式会社 | バーナおよびその運転方法 |
| JP5112284B2 (ja) | 2008-12-26 | 2013-01-09 | グローブライド株式会社 | 釣り用スプール |
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- 2011-06-09 TW TW100120216A patent/TWI463669B/zh not_active IP Right Cessation
- 2011-06-09 DE DE102011103803A patent/DE102011103803A1/de not_active Withdrawn
- 2011-06-30 CN CN2011101815326A patent/CN102315388A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674227A (zh) * | 2004-03-04 | 2005-09-28 | 株式会社半导体能源研究所 | 形成图案的方法，薄膜晶体管，显示设备及制法和应用 |
| CN1694278A (zh) * | 2004-04-29 | 2005-11-09 | 三星Sdi株式会社 | 包含有机受体膜的有机薄膜晶体管 |
| CN1905230A (zh) * | 2004-08-04 | 2007-01-31 | 索尼株式会社 | 场效应晶体管 |
| CN1825650A (zh) * | 2004-11-23 | 2006-08-30 | 三星Sdi株式会社 | 有机薄膜晶体管及其制造方法和平板显示器件 |
| JP2008243911A (ja) * | 2007-03-26 | 2008-10-09 | Nippon Hoso Kyokai <Nhk> | 有機薄膜トランジスタ及びディスプレイ |
| US20090076322A1 (en) * | 2007-09-13 | 2009-03-19 | Atsushi Matsunaga | Capsule endoscope |
| CN101645488A (zh) * | 2008-08-07 | 2010-02-10 | 索尼株式会社 | 有机薄膜晶体管、其制造方法和电子装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985764A (zh) * | 2014-05-30 | 2014-08-13 | Tcl集团股份有限公司 | 氧化物tft及其制备方法、阵列基板、显示器件 |
| CN103985764B (zh) * | 2014-05-30 | 2018-07-03 | Tcl集团股份有限公司 | 氧化物tft及其制备方法、阵列基板、显示器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201212238A (en) | 2012-03-16 |
| TWI463669B (zh) | 2014-12-01 |
| DE102011103803A1 (de) | 2012-02-02 |
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