CN102315388A - Thin-film transistor and manufacturing approach thereof, display unit and electronic equipment - Google Patents

Thin-film transistor and manufacturing approach thereof, display unit and electronic equipment Download PDF

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Publication number
CN102315388A
CN102315388A CN2011101815326A CN201110181532A CN102315388A CN 102315388 A CN102315388 A CN 102315388A CN 2011101815326 A CN2011101815326 A CN 2011101815326A CN 201110181532 A CN201110181532 A CN 201110181532A CN 102315388 A CN102315388 A CN 102315388A
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contact layer
organic semiconductor
semiconductor layer
thin
film transistor
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牛仓信一
胜原真央
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Abstract

Embodiments of the invention provide thin-film transistor and manufacturing approach, display unit and electronic equipment.This thin-film transistor comprises contact layer, and contact layer comprises organic semiconducting materials and acceptor material or donor material, and is provided between organic semiconductor layer and the source electrode/drain electrode.

Description

Thin-film transistor and manufacturing approach thereof, display unit and electronic equipment
Technical field
The present invention relates to be provided with thin-film transistor, method of manufacturing thin film transistor, the display unit of employing thin-film transistor and the electronic equipment that adopts thin-film transistor of organic semiconductor layer.
Background technology
In adopting the thin-film transistor of organic semiconductor layer, importantly impel reducing of contact resistance between organic semiconductor layer and the source electrode/drain electrode, to realize high (ON) electric current and the precipitous sub-threshold slope of opening.
Therefore, in the p of top contact bottom grating structure channel-type thin-film transistor, source electrode/drain electrode is provided on organic semiconductor layer, wherein stacks gradually by such as molybdenum oxide (MoO x) the acceptor material boundary layer and the conductive layer that form.As a result, proposed a kind of structure and impelled that contact resistance reduces between organic semiconductor layer and the source electrode/drain electrode (see " APPLIED PHYSICS LETTERS 94 ", (2009), the 143304-1 page or leaf is to the 143304-3 page or leaf).
In addition, in the p channel-type thin-film transistor of end contact bottom grating structure, source electrode/drain electrode is provided on gate insulating film, wherein stacks gradually above-mentioned boundary layer and the conductive layer that forms by acceptor material.And organic semiconductor layer is provided on the gate insulating film between source electrode and the drain electrode.As a result, proposed a kind of structure, wherein boundary layer is set to adjacent to the channel region in the organic semiconductor layer, thereby impels the reducing of contact resistance (seeing TOHKEMY 2008-243911 communique) of source electrode/drain electrode for channel region.
Summary of the invention
By way of parenthesis, in order to realize the miniaturization of component structure in the thin-film transistor, adopt photoetching process to form source electrode and drain electrode.In the case, adopt photoetching process forming the resist pattern on the top of electrode material film, and be that mask carries out pattern etched to electrode material film, thereby form small source electrode and drain electrode with the resist pattern.In the pattern etching of electrode material film, the aqueous solution that is used for etchant carries out etching, thereby does not damage the channel interface of the gate insulating film that is formed by organic semiconductor layer or organic insulating material.
Yet,, give by above-mentioned such as molybdenum oxide (MoO because be used for the etching of the aqueous solution of etchant in employing x) the boundary layer that forms of acceptor material cause etch damage, so use very difficulty of miniaturization processes.
Therefore, the desirable thin-film transistor that to use miniaturization processes and impel the contact resistance between organic semiconductor layer and the source electrode/drain electrode to reduce and have desirable characteristics that provides.In addition, be desirable to provide method, the display unit that adopts this thin-film transistor and the electronic equipment of making thin-film transistor with such characteristic.
According to embodiments of the invention, the contact layer that comprises organic semiconducting materials and acceptor material or donor material in the thin-film transistor that is provided is provided between organic semiconductor layer and the source electrode/drain electrode.
Contact layer with such structure comprises acceptor material or donor material as the impurity in the organic semiconducting materials, and has the conductivity that is better than organic semiconducting materials.As a result, reduced contact resistance between organic semiconductor layer and the source electrode/drain electrode.In addition, the conductivity of contact layer is by the content adjustment of acceptor material or donor material, so contact layer becomes the part of organic semiconducting materials.For this reason, in fact contact layer is retained between source electrode and the drain electrode.As a result, for example, in the top contact type, contact layer becomes the diaphragm to organic semiconductor layer.In addition, in end contact-type, contact layer becomes substrate, and can prevent that organic semiconductor layer from cutting off.Therefore, organic semiconductor layer can remain on the state of being expected.In addition, because contact layer has the structure that comprises organic semiconducting materials, etchant solutions influences contact layer when forming source electrode/drain electrode so suppressed in the top contact type, to carry out patterning.Therefore, adopt miniaturization processes in can forming at the pattern of source electrode/drain electrode.
In addition, according to another embodiment of the invention, the method for the manufacturing thin-film transistor that is provided comprises following order.At first, on substrate, form organic semiconductor layer, then, on organic semiconductor layer, form the contact layer that comprises organic semiconducting materials and acceptor material or donor material.Thereafter, the state that on formed contact layer, is provided with the end subtend forms source electrode/drain electrode.
Carry out such order and make the top that the method for thin-film transistor is included in contact layer and form source electrode/drain electrode, contact layer comprises acceptor material or donor material as the impurity for organic semiconducting materials.For this reason, even when the pattern of the source electrode/drain electrode that carries out being formed by metal material forms, adopt under the situation of miniaturization processes, also suppressed the influence of etching solution the contact layer that comprises organic semiconducting materials.As a result, can obtain the thin-film transistor of this spline structure, wherein contact layer is stayed between organic semiconductor layer and the source electrode/drain electrode reliably.In addition, because contact layer becomes the diaphragm to organic semiconductor layer, so organic semiconductor layer can remain the state of expectation.
In addition, according to still a further embodiment, display unit that is provided and electronic equipment comprise the thin-film transistor according to the embodiment of the invention.
As stated; According to the above embodiment of the present invention; When adopting miniaturization processes to form source electrode/drain electrode, can impel reducing of contact resistance between organic semiconductor layer and the source electrode/drain electrode by contact layer, and keep organic semiconductor layer at the state of being expected.As a result, can impel the characteristic of miniaturization and the thin-film transistor that improve to adopt organic semiconductor layer, and can realize adopting the height of display unit and electronic equipment of thin-film transistor integrated and high functionalized.
Description of drawings
Fig. 1 is the sectional view that illustrates according to the thin-film transistor structure of first embodiment of the invention;
Fig. 2 A and 2B are the cross section artworks that illustrates according to the method for manufacturing thin film transistor of first embodiment;
Fig. 3 is the sectional view that illustrates according to the thin-film transistor structure of second embodiment;
Fig. 4 A and 4B are sectional view and the plane graphs that illustrates according to the thin-film transistor structure of the 3rd embodiment;
Fig. 5 A to 5C is the cross section artwork that illustrates according to the method for manufacturing thin film transistor of the 3rd embodiment;
Fig. 6 A and 6B are sectional view and the plane graphs that illustrates according to the thin-film transistor structure of the 4th embodiment;
Fig. 7 A to 7C is the cross section artwork that illustrates according to the method for manufacturing thin film transistor of the 4th embodiment;
Fig. 8 is sectional view and the plane graph that illustrates according to the thin-film transistor structure of the 5th embodiment;
Fig. 9 A and 9B are the cross section artworks that illustrates according to the method for manufacturing thin film transistor of the 5th embodiment;
Figure 10 is the sectional view that illustrates according to the display unit example of the 6th embodiment;
Figure 11 is the circuit structure diagram according to the display unit of the 6th embodiment;
Figure 12 illustrates the perspective view of employing according to the television set of the display unit of the embodiment of the invention;
Figure 13 A illustrates the perspective view that employing is looked sideways according to the digital camera of the display unit of the embodiment of the invention in the past;
Figure 13 B be illustrate employing according to the digital camera of the display unit of the embodiment of the invention from after the perspective view looked sideways;
Figure 14 illustrates the perspective view of employing according to the notebook personal computer of the display unit of the embodiment of the invention;
Figure 15 illustrates the perspective view of employing according to the video camera of the display unit of the embodiment of the invention;
Figure 16 A illustrates mobile terminal apparatus the front view under opening of employing according to the for example mobile phone of the display unit of the embodiment of the invention;
Figure 16 B is the end view of mobile terminal apparatus;
Figure 16 C is the front view of mobile terminal apparatus under in off position;
Figure 16 D is the left side view of mobile terminal apparatus;
Figure 16 E is the right side view of mobile terminal apparatus;
Figure 16 F is the vertical view of mobile terminal apparatus; And
Figure 16 G is the upward view of mobile terminal apparatus.
Embodiment
Hereinafter, will with following order embodiments of the invention be described according to accompanying drawing.
1. first embodiment (first example of the thin-film transistor of top contact bottom grating structure)
2. second embodiment (second example of the thin-film transistor of top contact bottom grating structure)
3. the 3rd embodiment (providing first example of thin-film transistor of the top contact bottom grating structure of diaphragm)
4. the 4th embodiment (providing second example of thin-film transistor of the top contact bottom grating structure of diaphragm)
5. the 5th embodiment (example of the thin-film transistor of end contact top gate structure)
6. the 6th embodiment (adopting the applying examples of the display unit of thin-film transistor)
7. the 7th embodiment (applying examples of electronic equipment)
In addition, in first to the 5th embodiment, identical parts are represented by identical reference number, and are omitted the description of repetition.
1. first embodiment
Fig. 1 is the sectional view of the thin-film transistor 1-1 of first embodiment.Thin-film transistor 1-1 shown in Figure 1 has the top contact bottom grating structure, and gate insulating film 15 is provided on the substrate 11 with the state of cover gate electrode 13.On the top of gate insulating film 15, the stacked body of organic semiconductor layer 17 and contact layer 19 is provided successively.Stacked body is patterned into island, and it is cover gate electrode 13 on Width, and provides with the state that is stacked on the gate electrode 13 across gate insulating film 15.In addition, on gate insulating film 15, source electrode 21s/ drain electrode 21d is provided on the position that is oppositely arranged, and is inserted with gate electrode 13 therebetween.In source electrode 21s/ drain electrode 21d, the marginal portion that is oppositely arranged and is inserted with gate electrode 13 therebetween of source electrode 21s/ drain electrode 21d provides with the state that is stacked on the contact layer 19.
In above-mentioned structure, in first embodiment, the contact layer 19 that has identical patterns with organic semiconductor layer 17 is stacked on the organic semiconductor layer 17, and contact layer 19 comprises organic semiconducting materials and acceptor material or donor material.Hereinafter, begin to describe successively the details of this structure from lower floor.
Substrate 11
At least the surface of substrate 11 can keep state of insulation, and for example, the plastic base that is formed by PES (polyether sulfone), PEN (poly-naphthalene dicarboxylic acid glycol ester), PET (PETG) or PC (Merlon) etc. is used as substrate 11.In addition, can adopt metal forming and range upon range of substrates such as resin or glass substrate such as stainless steel (SUS).In order to obtain flexible pliability, adopt the substrate that uses plastic base or metal forming.
Gate electrode 13
As gate electrode 13, adopt gold (Au), aluminium (Al), silver (Ag), copper (Cu), platinum (Pt) or nickel (Ni) etc.Under the situation that adopts gold (Au), can impel the adhesion strength of improving with substrate 11 as bottom through piling up chromium (Cr).
Gate insulating film 15
As gate insulating film 15, adopt organic insulating film, for example, PVP (polyvinylpyrrolidone), PMMA (polymethyl methacrylate) and PVA (polyvinyl alcohol).In addition,, except organic insulating material, can adopt inorganic insulating membrane as gate insulating film 15, for example, silica (SiO 2), aluminium oxide (Al 2O 3) and tantalum oxide (Ta 2O 5).
Organic semiconductor layer 17
In organic semiconductor layer 17,, adopt organic semiconducting materials such as pentacene, anthracene or phthalocyanine (phthalocyanine), porphyrin, thienyl polymer and derivative thereof as p type organic semiconducting materials.As n type organic semiconducting materials, adopt such as fullerene, fluoridize pentacene and gather the semi-conducting material of (benzo diimidazole-benzo phenanthrolene) (poly (benzobisimidazo-benzophenanthroline)).
Contact layer 19
Contact layer 19 adopts aforesaid organic semiconducting materials and acceptor material or donor material to form.The acceptor material of formation contact layer 19 or donor material and organic semiconducting materials suitably are selected and are used to satisfy the conduction type of organic semiconductor layer 17.
For example, hope that the organic semiconducting materials that forms contact layer 19 adopts the material that shows the identical conduction type with the organic semiconducting materials that forms organic semiconductor layer 17, and can adopt other materials.
In addition, when the conduction type of organic semiconductor layer 17 was the p type, contact layer 19 adopted organic semiconducting materials and acceptor material with p type conduction type to form.And when the conduction type of organic semiconductor layer 17 was the n type, contact layer 19 adopted organic semiconducting materials and donor material with n type conduction type to form.
Acceptor material and the donor material content in contact layer 19 is adjusted into to make through what contact layer 19 flowed between source electrode 21s-drain electrode 21d and for example keeps enough low by (OFF) electric current, to be equal to or less than about 10 -12A.Hereinafter, with the concrete example of describing acceptor material and donor material.
The concrete example of acceptor material is following.
[metal oxide]
MoO x、ReO 3、V 2O 5、WO 3、TiO 2、AuO、Al 2O 3、CuO
[oxide]
SO 3
[metal halide]
CuI、SbCl 5、SbF 5、FeCl 3、LiF、BaF 2、CaF 2、MgF 2
[halide]
AsF 5、BF 3、BCl 3、BBr 3、PF 5
[metal carbonate]
CaCO 3、BaCO 3、Li 2CO 3
[organic molecule composition, complex compound]
The 1,4-benzoquinone class, the example has 2,3,5,6-four cyano-(to cyanic acid) (2,3; 5,6-tetracyano-(p-cyanyl)), 2,3-two bromo-5,6-dicyano-1,4-benzoquinone, 2,3-two chloro-5,6-dicyano-1,4-benzoquinone, 2; 3 ,-diiodo-5,6-dicyano-1,4-benzoquinone, 2,3-dicyano-1,4-benzoquinone, tetrabromoquinone, tetrachloro be for 1,4-benzoquinone, tetraiodo 1,4-benzoquinone, tetrafluoro 1,4-benzoquinone, 2,5-two chloro-1,4-benzoquinone, 2,6;-two chloro-1,4-benzoquinone, chloranilic acid, 2,5-dibromo 3,6-dihydroxy-1,4-benzoquinone, 2,5 ,-dihydroxy-1,4-benzoquinone, 2,5-two chloro-3; 6-dimethyl-1,4-benzoquinone, 2,5-two bromo-3,6-dimethyl-1,4-benzoquinone, BTDAQ, 1,4-benzoquinone, 2,5-dimethyl-1,4-benzoquinone, 2,6-dimethyl-1,4-benzoquinone, tetra-methylenedimine, adjacent benzoquinones, tetrabromo for adjacent benzoquinones, tetrachloro for adjacent benzoquinones, 1; 4-naphthoquinones, 2,3-dicyano-5-nitro-1,4-naphthoquinones, 2,3-dicyano-1,4-naphthoquinones, 2; 3-two chloro-5-nitros-1,4-naphthoquinones, 2,3-two chloro-1,4-naphthoquinones and 1,4-naphthoquinones.
Diphenoquinone species, the example have 3,3 ', 5,5 '-tetrabromo-phenoquinone, 3,3 ', 5,5 '-tetrachloro-phenoquinone and phenoquinone.
TCNQ class and analog; The example has four cyano-quino bismethane (TCNQ), tetrafluoro-four cyano-lose promise two hexanes (F4-TCNQ), trifluoromethyl-TCNQ, 2; 5-two fluoro-TCNQ, a fluoro-TCNQ, TNAP, decyl-TCNQ, methyl-TCNQ, dihydroberberine-TCNQ (dihydrobarereno-TCNQ), N-1-TCNQ, dimethyl-TCNQ, diethyl-TCNQ, benzo-TCNQ, dimethoxy-TCNQ, BTDA-TCNQ, diethoxy-TCNQ, tetramethyl-TCNQ, four cyano anthraquinone bismethane, many nitro compounds, tetranitro bis-phenol, dinitro biphenyl, picric acid, trinitrobenzen, 2; 6-dinitrophenol and 2,2, 4-dinitrophenol.
Fluorenes class (fluorine class), the example has 9-dicyano methylene-2,4,5,7-tetranitro-fluorenes, 9-dicyano methylene-2,4,7-trinitro--fluorenes, 2,4,5,7-tetranitro-Fluorenone and 2,4,7-trinitro--Fluorenone.
Benzo cyanic acid class (benzocyano class) and analog thereof; The example has (TBA) 2HCTMM, (TBA) 2HCDAHD, KCF, TBAPCA, TBAMeOTCA, T BAEtOTCA, TBAPrOTCA, (TBA) 2HCP, hexacyanobutadiene TCNE and 1; 2,4,5-four cyano benzene.
Transition metal complex glass, the example have (TPP) 2Pd (dto) 2, (TPP) 2Pt (dto) 2, (TPP) 2Ni (dto) 2, (TPP) 2Cu (dto) 2(TBA) 2Cu (ox) 2
The concrete example of donor material is following.
[metal]
Li、Cs
[metal carbonate]
Cs 2O 3、Rb 2CO 3
[organic molecule, complex compound]
Family's hydrocarbon and analog thereof, the example have aphthacene, perylene, anthracene, cool, pentacene, bend, phenanthrene, naphthalene, paradimethoxybenzene, rubrene and hexa methoxy benzophenanthrene.
TTF class and analog thereof, the example have HMTTF, OMTTF, TMTTF, BEDO-TTF, TTeCn-TTF, TMTSF, EDO-TTF, HMTSF, TTF, EOET-TTF, EDT-TTF, (EDO) 2DBTTF, TSCn-TTF, HMTTeF, BEDT-TTF, CnTET-TTF, TTCn-TTF, TSF and DBTTF.
TTT class, the example have four sulfenyl aphthacenes, four seleno aphthacenes and four telluro aphthacenes.
Azines, the example have dibenzo [c, d]-phenthazine, benzo [c]-phenthazine, phenthazine, N-methyl-phenthazine, dibenzo-[c, d]-phenoselenazine, N, N-dimethyl azophenlyene and azophenlyene (phenizine).
The monobasic amine; The example has N; N-diethyl-meta-aminotoluene, N, N-diethylaniline, N-ethyl-ortho-aminotoluene, diphenylamine, scatol, indoles, N, N-dimethyl-ortho-aminotoluene, ortho-aminotoluene, meta-aminotoluene, aniline, o-chloraniline, o-bromoaniline and paranitroanilinum.
Two amines, the example has N, N, N '; N '-tetramethyl-p-phenylenediamine (PPD), 2,3,5,6-tetramethyl-(durene diamines), p-phenylenediamine (PPD), N; N, N ', N '-tetramethyl benzidine, 3,3 ' 5; 5 '-tetramethyl benzidine, 3,3 '-dimethyl benzidine, 3,3 '-dimethoxy benzidine, benzidine, 3,3 '-two bromo-5; 5 '-dimethyl benzidine, 3,3 '-two chloro-5,5 '-dimethyl benzidine and 1,6-diaminourea pyrene.
The instance of residue has 4,4 ', 4 " three (N-3-aminomethyl phenyl-N-phenyl amino)-triphenylamines: (m-MTDATA), 4; 4 '; 4 "-three (N-(2-naphthyl)-N-phenyl amino)-triphenylamines: (2TNATA), α-NDP, copper phthalocyaine dye, 1,4,6; 8-four dimethylamino pyrenes, 1,6-disulfide group pyrene, decamethyl ferrocene and ferrocene.
Source electrode 21s/ drain electrode 21d
Source electrode 21s and drain electrode 21d can be connected to contact layer 19 through ohmic contact.For this reason, electrode can be formed by for example gold (Au), copper (Cu) or silver (Ag) etc., perhaps can adopt the conductive ink that comprises conducting particles to form pattern.
Manufacturing approach
Next, will the manufacturing approach according to the thin-film transistor 1-1 of first embodiment be described according to the cross section artwork of Fig. 2 A and 2B.
At first, shown in Fig. 2 A, on substrate 11, gate electrode 13 is carried out patterning, and gate electrode 13 is coated with gate insulating film 15.Gate electrode 13 forms like this, with the method for suitable selection for example vapour deposition process or sputtering method form metallic material film, form the resist pattern at an upper portion thereof through photoetching process, and be the pattern etching that mask carries out metallic material film with the resist pattern.In addition, in the formation of gate electrode 13, except preceding method, can adopt printing technology such as silk screen printing, intaglio printing and ink jet printing (ink jet printing).
Under the situation that adopts organic insulating material, the film of gate insulating film 15 formation employing comprises that the coating method such as the print process of spin-coating method, silk screen printing, intaglio printing and ink jet printing method carries out.Equally, under the situation that adopts inorganic insulating material, film forms through adopting vapour deposition, sputter and CVD method to realize.
Next, shown in Fig. 2 B, on the position of cover gate electrode 13 on the gate insulating film 15, the stacked body of organic semiconductor layer 17 and contact layer 19 forms pattern with island.
Here, for example, the pattern vapour deposition process of applications exploiting mask; And organic semiconducting materials at first vapour deposition forms with the pattern that carries out organic semiconductor layer 17; Then, organic semiconducting materials and acceptor material or donor material carry out codeposition, form with the pattern that carries out contact layer 19.At this moment, on organic semiconductor layer 17, carry out the pattern formation of identical shaped contact layer 19.In addition, for example, organic semiconductor layer 17 can form with contact layer 19 successively, and can be through identical art pattern CADization.In addition, the application of printed method can at first be carried out the pattern printing to organic semiconductor layer 17, and then, contact layer 19 can adopt black liquid to come printed patterns, and wherein organic semiconducting materials and acceptor material or donor material are mixed with each other.In addition, under organic semiconductor layer 17 and contact layer 19 do not have situation that patterning and element needn't isolate, can carry out coating filmform to layer 17 and 19 successively.
Thereafter, as shown in Figure 1, source electrode 21s and drain electrode 21d are formed on the gate insulating film 15.Desirable is that source electrode 21s/ drain electrode 21d forms micro pattern through application examples such as photoetching process.
In the case, at first, electrode material film is formed on the gate insulating film 15 that is formed with contact layer 19, and goes up formation resist pattern at an upper portion thereof through using photoetching process.Next, through being the etching of mask with the resist pattern, electrode material film is patterned as and forms source electrode 21s/ drain electrode 21d.In etching, desirable is on organic semiconductor layer 17, to stay contact layer 19 through carrying out wet etching.As a result, even when organic semiconductor layer 17 forms the film thickness that has as thin as a wafer, also can keep initial film thickness.In addition, through in wet etching process, adopting the aqueous solution in the etchant can carry out the patterning of electrode material film and not damage organic semiconductor layer 17 and contact layer 19.Behind the patterning, remove the resist pattern.
In addition, as using photolithographic another formation method, can use the method for peeling off.In the case, at first, on the gate insulating film that is formed with contact layer 19 15, form the resist pattern, and go up the formation electrode material film at an upper portion thereof through using photoetching process.Next, the electrode material film of resist pattern is removed through removing the resist pattern in the lump, and remaining electrode material membrane portions forms source electrode 21s/ drain electrode 21d.
As another formation method of source electrode 21s/ drain electrode 21d, can use the shadow mask method.
According to first embodiment, between organic semiconductor layer 17 and source electrode 21s/ drain electrode 21d, contact layer 19 is provided, it comprises acceptor material or donor material as the impurity in the organic semiconducting materials.As a result, contact layer 19 has the conductivity that is better than organic semiconductor layer 17, thereby has reduced the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.
In addition; Because the conductivity of contact layer 19 is by the content adjustment of acceptor material or donor material; So, even when contact layer 19 former states are stayed between source electrode 21s and the drain electrode 21d as organic semiconductor layer 17 a part of, also can prevent the increase of OFF electric current.For this reason, when the pattern that carries out source electrode 21s/ drain electrode 21d formed, contact layer 19 can stay the diaphragm as organic semiconductor layer 17.Therefore, even when organic semiconductor layer 17 forms the film thickness that has as thin as a wafer, also can keep expecting extremely thin film thickness.As a result, can reduce volume resistance, this volume resistance depends on the distance (that is the film thickness of organic semiconductor layer 17) of the channel region ch that forms on source electrode 21s/ drain electrode 21d and the organic semiconductor layer 17.
As a result, can in having the thin-film transistor 1-1 of top contact bottom grating structure, impel the improvement of ON electric current and precipitousization of sub-threshold slope.
In addition; In the manufacturing approach of first embodiment that adopts Fig. 2 A and 2B to describe; The pattern that on the top of contact layer 19, carries out source electrode 21s/ drain electrode 21d forms, and contact layer 19 comprises acceptor material or donor material as the impurity in the organic semiconducting materials., even wait when forming electrode material film being connected to the gold (Au) of contact layer 19, copper (Cu) or silver (Ag) through ohmic contact, and under the situation that realizes its pattern etching during the water-soluble etchant of employing, contact layer 19 is also unaffected for this reason.Therefore, can obtain to have the thin-film transistor 1-1 of above-mentioned structure, through using the pattern formation of carrying out small source electrode 21s/ drain electrode 21d as the photoetching process of miniaturization processes.
As a result, can realize impelling the miniaturization of the thin-film transistor 1-1 of improved properties.
2. second embodiment
Fig. 3 is the sectional view of the thin-film transistor 1-2 of second embodiment.The thin-film transistor 1-2 shown in Figure 3 and the first embodiment something in common are that thin-film transistor 1-2 has the top contact bottom grating structure, and contact layer 19 ' utilize organic semiconducting materials and acceptor material or donor material to form.Particularly, in this second embodiment, be characterised in that the content of contact layer 19 ' middle acceptor material or donor material is partly different each other.In addition, contact layer 19 ' outside structure be basically the same as those in the first embodiment.
In other words, the 19a of first that is plugged between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d of contact layer 19 ' can be divided into and the second portion 19b between source electrode 21s and the drain electrode 21d.In the middle of them, the 19a of first is configured to, and the content of acceptor material and donor material is greater than the acceptor material of second portion 19b and the content of donor material.In addition, desirable is to set a part of contact layer 19 ' as second portion 21b, it is not plugged between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d, and is not arranged between source electrode 21s and the drain electrode 21d.
Here, the content of acceptor material or donor material has enough amounts among the 19a of first, thereby reduces the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.The content of acceptor material or donor material is set at the influence of the content that does not receive second portion 19b among the 19a of first.
Equally, the acceptor material that comprises among the second portion 19b or the content of donor material for example are set to be equal to or less than between source electrode 21s and the drain electrode 21d and for example keep being equal to or less than 10 through contact layer 19 ' mobile OFF electric current -12The degree of A.In addition, the content of acceptor material or donor material can be zero among the second portion 19b.The content of acceptor material or donor material is set at the influence of the content that does not receive the 19a of first among the second portion 19b.
Such contact layer 19 ' in, desirable is that the organic semiconducting materials that forms 19a of first and second portion 19b is the material with the organic semiconducting materials demonstration identical conduction type that forms organic semiconductor layer 17.Form contact layer 19 ' organic semiconducting materials can be and form the organic semiconducting materials material different of organic semiconductor layer 17.
In addition, when the conduction type of organic semiconductor layer 17 was the p type, organic semiconducting materials and acceptor material that contact layer 19 ' utilization has p type conduction type formed.Equally, when the conduction type of organic semiconductor layer 17 was the n type, organic semiconducting materials and donor material that contact layer 19 ' utilization has n type conduction type formed.
Manufacturing approach
With describing the as above manufacturing approach of the thin-film transistor 1-2 of second embodiment.
At first, with first embodiment in adopt Fig. 1 to 2B to describe same sequence carry out technology, up to formation have with first embodiment in the thin-film transistor 1-1 of the structure described.Yet, at this moment between on the point, the acceptor material or the donor material that importantly comprise q.s are to the degree that reduces the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d, with formation contact layer 19.
Next, carrying out with source electrode 21s/ drain electrode 21d is mask is removed acceptor material or donor material from contact layer 19 technology.As a result, the content of acceptor material or donor material is lower than the contact layer part that covers with source electrode 21s/ drain electrode 21d from the contact layer part that source electrode 21s/ drain electrode 21d exposes.And as shown in Figure 3, contact layer 19 ' form comprises 19a of first and second portion 19b, and the content of acceptor material or donor material remains highly among the 19a of first, and content is adjusted into and is lower than the 19a of first among the second portion 19b.
Be that mask is removed in acceptor material or the donor material with source electrode 21s/ drain electrode 21d, for example, example below two kinds of methods.
Its first method is to be that mask is through the method for etching from contact layer 19 ' selective removal acceptor material or donor material with source electrode 21s/ drain electrode 21d.In the case, on organic semiconducting materials, adopt the wet etching of etching solution, its only selectivity elution (elute) acceptor material or donor material.As a result, the part that covers with source electrode 21s/ drain electrode 21d is protected in order to avoid the influence of etching solution, and acceptor material or donor material are from the preferential elution of source electrode 21s/ drain electrode 21d exposed portions.In addition, the aqueous solution can be used as etching solution.
As an example, form p type contact layer 19 ' situation under, pentacene is as organic semiconducting materials, molybdenum oxide (MoO 3) as acceptor material, and water is as the etching solution of acceptor material.Form n type contact layer 19 ' situation under, fluoridize pentacene as organic semiconducting materials, rubidium carbonate (Rb 2CO 3) as donor material, and water is as the etching solution of donor material.
Above-mentioned pass through wet etching selective removal acceptor material or donor material can be when forming with the pattern that carries out source electrode 21s/ drain electrode 21d or the identical technology of wet etching the during removal of pattern used Etching mask in forming carry out.In addition, selective removal rises to this technology.
Next, its second method is to be that mask passes through heat treated selectivity distillation and removes the method for acceptor material or donor material with source electrode 21s/ drain electrode 21d.In the case, the temperature that heat treated is carried out be equal to or less than constitute contact layer 19 ' the sublimation temperature of organic semiconducting materials, and be equal to or higher than the sublimation temperature of acceptor material or donor material.For this reason, importantly constitute contact layer 19 ' the sublimation temperature of organic semiconducting materials be higher than constitute contact layer 19 ' acceptor material or the sublimation temperature of donor material.
In addition, see from the viewpoint of protective material, desirable be the sublimation temperature that constitutes the organic semiconducting materials of organic semiconductor layer 17 also be higher than constitute contact layer 19 ' acceptor material or the sublimation temperature of donor material.In addition, the temperature of preferred heat treated is lower than the sublimation temperature of the organic semiconducting materials that constitutes organic semiconductor layer 17, and be lower than constitute contact layer 19 ' with the glass transition temperature of each organic semiconducting materials of organic semiconductor layer 17.
As an example, form p type contact layer 19 ' situation under, pentacene is as organic semiconducting materials, and tetrafluoro-1, the 4-benzoquinones is as acceptor material, thereby carries out heat treated with medium temperature.Form n type contact layer 19 ' situation under, fullerene is as organic semiconducting materials, and tetrathiafulvalene (tetrathiafulvalene) is as donor material, thereby carries out heat treated with medium temperature.See that from the viewpoint of material of protection organic semiconducting materials desirable is that the temperature of heat treated is low.
According to the second top embodiment, between organic semiconductor layer 17 and source electrode 21s/ drain electrode 21d, contact layer 19 ' be provided as comprises acceptor material or the donor material impurity as organic semiconducting materials.As a result, similar with first embodiment, contact layer 19 ' good conductivity in organic semiconductor layer 17, thereby reduced the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.In addition, can reduce volume resistance, this volume resistance depends on the distance (that is the film thickness of organic semiconductor layer 17) of the channel region ch that forms on source electrode 21s/ drain electrode 21d and the organic semiconductor layer 17.As a result, can in the thin-film transistor 1-2 of top contact bottom grating structure, impel precipitousization of improving ON electric current and sub-threshold slope.
In addition, in a second embodiment, the content of contact layer 19 ' middle acceptor material or donor material is set at higher by the 19a of first that plugs between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.As a result, the content of acceptor material or donor material can be set to the degree of q.s among the 19a of first, thereby reduces the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.On the other hand, the content of acceptor material or donor material can be set to little value among the second portion 19b between source electrode 21s and the drain electrode 21d, can be enough to keep the OFF electric current very low.As a result, compare, can suppress the OFF electric current reliably, have the ability of impelling precipitousization of improving ON electric current and sub-threshold slope simultaneously with first embodiment.
In addition, in the manufacturing approach of second embodiment, as stated, can obtain to have the thin-film transistor 1-2 of such structure: the above-mentioned 19a of first has the different acceptor materials or the content of donor material with second portion 19b.In addition, even in the manufacturing approach of second embodiment, the pattern of source electrode 21s/ drain electrode 21d be formed on contact layer 19 ' top on carry out, contact layer 19 ' comprise acceptor material or donor material are as the impurity in the organic semiconducting materials.As a result, can realize being similar to the miniaturization that first embodiment impels the thin-film transistor 1-2 that improves characteristic.
3. the 3rd embodiment
Fig. 4 A and 4B are sectional view and the plane graphs of the thin-film transistor 1-3 of the 3rd embodiment.This sectional view is corresponding to the IVB-IVB cross section in the plane graph.Thin-film transistor 1-3 shown in Fig. 4 A and the 4B has the top contact bottom grating structure that is similar to first and second embodiment, and still different with other embodiment is that diaphragm 22 is provided on the channel region of organic semiconductor layer 17.
In other words, on substrate 11, gate insulating film 15 is provided as the state of cover gate electrode 13.Organic semiconductor layer 17 is provided on the top of gate insulating film 15.Organic semiconductor layer 17 is patterned to island, with cover gate electrode 13 on Width, and provides with the state that is stacked on the gate electrode 13 across gate insulating film 15.Diaphragm 22 is provided on the gate electrode film 15, has organic semiconductor layer 17 therebetween.Diaphragm 22 is stacked on the gate electrode 13, and it is shaped as and covers the channel region ch that forms on the organic semiconductor layer 17, and exposes the part of the organic semiconductor layer 17 of gate electrode 13 both sides.
On the gate insulating film that provides diaphragm 22 15, contact layer 19 provides with the state that is stacked on the organic semiconductor layer 17 that exposes from diaphragm 22.Contact layer 19 for example is provided on the whole surface of gate insulating film 15.On contact layer 19, source electrode 21s/ drain electrode 21d is provided at the position that is oppositely arranged, and is inserted with gate electrode 13 therebetween.Source electrode 21s/ drain electrode 21d is provided as its end and is arranged on the state on the diaphragm 22, and overlaps on the organic semiconductor layer 17 across the contact layer 19 of diaphragm 22 both sides.
Here, be provided at least on the gate electrode 13 as the diaphragm 22 of unique components among the 3rd embodiment, and have the shape that covers the channel region ch that forms on the organic semiconductor layer 17.And in the both sides of diaphragm 22, source electrode 21s/ drain electrode 21d is connected to organic semiconductor layer 17 through contact layer 19.Therefore, channel region ch is formed on the part of organic semiconductor layer 17 of diaphragm 22 bottoms, thereby the width of gate electrode direction becomes channel length L in the diaphragm 22.In addition, the width of source electrode 21s/ drain electrode 21d becomes channel width W.
Diaphragm 22 is formed by insulating material, for example, is formed by photo anti-corrosion agent material.
In addition, contact layer 19 can be stacked on the diaphragm 22.Desirable is contact layer 19 because the step of the film thickness of diaphragm 22 and the state that breaks off in the upper and lower of diaphragm 22.In addition, contact layer 19 can break off on diaphragm 22.In the case, in contact layer 19, slot segmentation can be formed on the diaphragm 22.Slot segmentation is provided on the Width of source electrode 21s/ drain electrode 21d at least, and preferably is provided as the state that strides across island organic semiconductor layer 17.
The contact layer 19 that comprises organic semiconducting materials and acceptor material or donor material as stated is basically the same as those in the first embodiment.Yet in this 3rd embodiment, the content of acceptor material or donor material can be set at and be higher than first and second embodiment in the contact layer 19.Even in the case, contact layer 19 is also broken off by the step of diaphragm 22, thereby the OFF electric current flows between source electrode 21s and drain electrode 21d without contact layer 19.In addition, exist under the transistorized situation of adjacent films, acceptor material in the contact layer 19 or donor material must be suppressed to element can segregate degree.
In addition, each parts outside contact layer 19 and the diaphragm 22 can be identical with those of first embodiment such as the details of material structure.
Manufacturing approach
Next, the manufacturing process of the thin-film transistor 1-3 of the 3rd embodiment will be described according to the cross section artwork of Fig. 5 A to 5C.
At first, shown in Fig. 5 A, the pattern that on substrate 11, carries out gate electrode 13 forms, and with the gate electrode 13 of gate insulating film 15 overlay patternization.So far, this technology is similar to aforesaid first embodiment and carries out.Next, the position of cover gate electrode 13 on gate insulating film 15 only is patterned as island with organic semiconductor layer 17.The pattern of organic semiconductor layer 17 becomes described identical with first embodiment, and adopts the pattern vapour deposition process or the print process of mask to carry out through using.In addition, be not patterned and element needn't be isolated the time, can carry out coating filmform organic semiconductor layer 17 at organic semiconductor layer 17.
Next, shown in Fig. 5 B, diaphragm 22 is formed on the gate insulating film 15 that is formed with organic semiconductor layer 17.Here, for example, the diaphragm 22 that is formed by photo anti-corrosion agent material forms through using photoetching process.As a result, on the gate electrode 13 in organic semiconductor layer 17, form diaphragm 22, its size Control is for accurately meeting channel width.At this moment, desirable is that the film thickness of diaphragm 22 is set at enough thick degree, thereby the contact layer 19 that forms is after a while broken off by the step of diaphragm 22.In addition, diaphragm 22 can be formed by inorganic insulating material.In the case, inorganic insulating material can use the resist pattern to be etched as mask.
Next, shown in Fig. 5 C, form film, form the contact layer 19 on cover gate dielectric film 15 tops through top from diaphragm 22.Here, for example, organic semiconducting materials and acceptor material or donor material codeposition are to form contact layer 19.In addition, for example, contact layer 19 can adopt black liquid printing and formation through the application of printed method, and organic semiconducting materials and acceptor material or donor material are mixed with each other in the black liquid.In addition, contact layer 19 can adopt the coated film forming of application of liquid, and organic semiconducting materials and acceptor material or donor material are mixed with each other in the application of liquid.
Next, shown in Fig. 4 A and 4B, on contact layer 19, form source electrode 21s and drain electrode 21d, its end relatively is arranged on the diaphragm 22.In the formation of source electrode 21s/ drain electrode 21d, for example, use the shadow mask method.In addition, in the same manner as in the first embodiment, through using photoetching process, electrode can form micro patterns.
In addition, under the situation that contact layer 19 on this time point is not broken off by the upper and lower of diaphragm 22, the technology that can carry out on diaphragm 22, breaking off contact layer 19.
In the case, desirable is the technology of removing and breaking off the part of the contact layer 19 that exposes between the source electrode 21s-drain electrode 21d through laser ablation (1aser ablation).
According to the 3rd above-mentioned embodiment, similar with first embodiment, between organic semiconductor layer 17 and source electrode 21s/ drain electrode 21d, contact layer 19 is provided as and comprises acceptor material or donor material as the impurity in the organic semiconducting materials.As a result, similar with first embodiment, contact layer 19 has better conductivity than organic semiconductor layer 17, thereby has reduced the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.
In addition, particularly in this 3rd embodiment, the top of channel region ch is coated with diaphragm 22.Even when organic semiconductor layer 17 forms the film thickness that has as thin as a wafer, also can keep the film thickness of being expected as thin as a wafer.As a result, can reduce volume resistance, volume resistance depends on the distance (that is the film thickness of organic semiconductor layer 17) of the channel region ch that forms on source electrode 21s/ drain electrode 21d and the organic semiconductor layer 17.In addition, contact layer 19 is broken off by the upper and lower of diaphragm 22.As a result, can prevent increase through the OFF electric current of contact layer 19.As a result, can in the thin-film transistor 1-3 of top contact bottom grating structure, impel the improvement of ON electric current and precipitousization of sub-threshold slope.
In addition, even in the manufacturing approach of the 3rd embodiment, the pattern of source electrode 21s/ drain electrode 21d forms and also carries out on the top of contact layer 19, and contact layer 19 comprises acceptor material or donor material as the impurity in the organic semiconducting materials.As a result, similar with first embodiment, can realize impelling the miniaturization of the thin-film transistor 1-3 that characteristic improves.
In addition, this 3rd embodiment also can combine with second embodiment.In the case, under the state shown in Fig. 4 A and the 4B, carrying out with source electrode 21s/ drain electrode 21d is mask is removed acceptor material or donor material from contact layer 19 technology.This technology can be and identical mode described in second embodiment.
By this way, through combining this 3rd embodiment and second embodiment, can make the content of acceptor material in the part of the contact layer 19 under the source electrode 21s/ drain electrode 21d or donor material be higher than the content of other parts.As a result, acceptor material that can in the part of the contact layer 19 under the source electrode 21s/ drain electrode 21d, comprise or donor material be to the degree of q.s, thereby reduce the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.On the other hand, the acceptor material in other parts of contact layer 19 or the content of donor material can be set to little value, thereby element can be fully isolated.
As a result, can obtain a kind of thin-film transistor structure, it can adapt to high integration, has the ability of impelling improvement of ON electric current and precipitousization of sub-threshold slope simultaneously.
4. the 4th embodiment
Fig. 6 A and 6B are sectional view and the plane graphs of the thin-film transistor 1-4 of the 4th embodiment.This sectional view is corresponding to the VIB-VIB cross section in the plane graph.Thin-film transistor 1-4 shown in Fig. 6 A and the 6B has the top contact bottom grating structure; Be similar to aforesaid first to the 3rd embodiment; And be that with the difference of other embodiment diaphragm 23 is provided as broadly the top that (widely) covers the gate insulating film 15 that provides organic semiconductor layer 17.
In other words, on substrate 11, gate insulating film 15 is provided as the state of cover gate electrode 13.Organic semiconductor layer 17 is provided on the top of gate insulating film 15.Organic semiconductor layer 17 is patterned to island, with cover gate electrode 13 on Width, and is provided as across gate insulating film 15 and is stacked on the state on the gate electrode 13.Diaphragm 23 is provided on the gate insulating film 15 that provides organic semiconductor layer 17.Diaphragm 23 is stacked on the gate electrode 13, and has opening 23a, and opening 23a has betwixt and exposes organic semiconductor layer 17 on the position that is oppositely arranged of gate electrode 13.On diaphragm 23, contact layer 19 provides with the state that in opening 23a bottom, is stacked on the organic semiconductor layer 17.In addition, on diaphragm 23, source electrode 21s/ drain electrode 21d is arranged on the position that is oppositely arranged that gate electrode 13 is arranged therebetween.Source electrode 21s/ drain electrode 21d is to provide being oppositely arranged and having the state that overlaps on the contact layer 19 in the bottom of opening 23a of gate electrode 13 therebetween.
Here, the diaphragm 23 as the distinctive parts of this 4th embodiment is provided as at least in the shape that covers the channel region ch top that forms on the organic semiconductor layer 17 on the gate electrode 13.And on the basal surface of opening 23a, source electrode 21s/ drain electrode 21d is connected to organic semiconductor layer 17 through contact layer 19.Therefore, channel region ch is formed in the organic semiconductor layer 17 between the opening 23a-23a, and the interval between the opening 23a-23a becomes channel length L.
In addition, as shown in the figure, when each opening 23a has independently poroidly, and organic semiconductor layer 17 is exposed to whole when surface of bottom, and opening 23a becomes channel width W along the width of the bearing of trend of gate electrode 13.In addition, if diaphragm 23 has the shape that covers the channel region ch top that forms on the organic semiconductor layer 17 at least, the whole surface that then diaphragm 23 needn't covered substrate 11, but can be island-shaped pattern.In the case, the width of source electrode 21s/ drain electrode 21d becomes channel width.
Above-mentioned diaphragm 23 is formed by insulating material, for example, formed by photo anti-corrosion agent material, and opening 23a provides through photoetching.
In addition, contact layer 19 also can be stacked on the diaphragm 23 and the organic semiconductor layer 17 of the opening 23a of diaphragm 23 bottom on.Desirable is the state that contact layer 19 breaks off on opening 23a bottom and diaphragm 23 for the step by opening 23a part.In addition, contact layer 19 can break off between two opening 23a-23a on the diaphragm 23.In the case, in contact layer 19, slot segmentation is provided on the diaphragm 23 between the opening 23a-23a.Slot segmentation is provided on the part between the opening 23a-23a at least, preferably, is provided as the state of the organic semiconductor layer 17 that strides across island.
The contact layer 19 that comprises organic semiconducting materials and acceptor material or donor material as stated is identical with the first top embodiment.Yet in this 4th embodiment, the content of acceptor material or donor material can be set at and be higher than first to the 3rd embodiment in the contact layer 19.For example, contact layer 19 can be only by any formation the in acceptor material or the donor material.Even in the case, contact layer 19 also breaks off between opening 23a-23a, thereby the OFF electric current does not flow between source electrode 21s and drain electrode 21d through contact layer 19.
In addition, the details that constitutes such as material of each parts outside contact layer 19 and the diaphragm 23 can be basically the same as those in the first embodiment.
Manufacturing approach
Next, the manufacturing process of the thin-film transistor 1-4 of the 4th embodiment will be described according to the cross section artwork of Fig. 7 A and 7B.
At first, shown in Fig. 7 A, the pattern that on substrate 11, carries out gate electrode 13 forms, and the gate electrode 13 of patterning is coated with gate insulating film 15.So far, this technology is similar to aforesaid first embodiment and carries out.Next, on the position of cover gate electrode 13 on the gate insulating film 15, only organic semiconductor layer 17 is patterned as island.The pattern of organic semiconductor layer 17 forms identical with described in first embodiment, and carries out through the pattern vapour deposition process or the print process of applications exploiting mask.In addition, when organic semiconductor layer 17 does not have patterning and element to isolate, can carry out coating filmform to organic semiconductor layer 17.
Next, shown in Fig. 7 B, diaphragm 23 is formed on the gate insulating film 15 that is formed with organic semiconductor layer 17.Here, for example, the diaphragm 23 that is formed by photo anti-corrosion agent material forms through using photoetching process.As a result, the opening 23a that forms on it of diaphragm 23 accurately is controlled at the position that is inserted with gate electrode 13 therebetween as micro pattern.At this moment, desirable is that the film thickness of diaphragm 23 is set at enough thick degree, thereby the contact layer 19 that forms is after a while broken off by the step of opening 23a part.In addition, diaphragm 23 can be formed by inorganic insulating material.In the case, inorganic insulating material can the resist pattern be a mask etching.
Next, shown in Fig. 7 C, through the top film forming from diaphragm 23, contact layer 19 is formed on the organic semiconductor layer 17 of opening 23a bottom.Here, for example, organic semiconducting materials and acceptor material or donor material codeposition are to form contact layer 19.In addition, for example, contact layer 19 can adopt black solution to form through the printing of application of printed method, and organic semiconducting materials and acceptor material or donor material are mixed with each other in the black solution.In addition, contact layer 19 can adopt and apply the coated film forming of liquid, and organic semiconducting materials and acceptor material or donor material are mixed with each other in the coating liquid.
Next, shown in Fig. 6 A and 6B, source electrode 21s and drain electrode 21d are formed on the diaphragm 23 that provides contact layer 19.In the formation of source electrode 21s/ drain electrode 21d, for example, use the shadow mask method.In addition, with first embodiment just as mode, electrode can form micro patterns through using photoetching process.
In addition, the contact layer 19 of opening 23a in diaphragm 23 bottom not have under the situation of disconnection with contact layer on the diaphragm 23 19 this moments, can break off on the diaphragm 23 technology of the contact layer 19 between two opening 23a-23a.In the case, desirable is the technology of removing the part of the contact layer 19 that is exposed to gate electrode 13 tops through laser ablation, to break off the contact layer 23 of two opening 23a-23a bottoms.
According to the 4th above-mentioned embodiment, similar with first embodiment, between organic semiconductor layer 17 and source electrode 21s/ drain electrode 21d, contact layer 19 is provided as and comprises acceptor material or donor material as the impurity in the organic semiconducting materials.As a result, contact layer 19 has better conductivity than organic semiconductor layer 17, thereby has reduced the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.In addition, contact layer 19 is provided at respectively in the bottom of the opening 23a that is inserted with gate electrode 13 therebetween dividually.Therefore, contact layer 19 does not depend on the content of acceptor material or donor material, and can not become the factor that increases the OFF electric current between source electrode 21s and the drain electrode 21d.For this reason, the effect that reduces contact resistance is higher than other embodiment.
In addition, on diaphragm 23, carry out the patterning of source electrode 21s/ drain electrode 21d.For this reason, even when organic semiconductor layer 17 forms the film thickness that has as thin as a wafer, also can keep the film thickness of being expected as thin as a wafer of organic semiconductor layer 17, and not receive the influence of the formation technology of source electrode 21s/ drain electrode 21d.As a result, can reduce volume resistance, volume resistance depends on the distance (that is the film thickness of organic semiconductor layer 17) of the channel region ch that forms on source electrode 21s/ drain electrode 21d and the organic semiconductor layer 17.
As a result, the improvement of ON electric current and precipitousization of sub-threshold slope can be in the thin-film transistor 1-4 of top contact bottom grating structure, impelled, miniaturization processes can be used simultaneously.
In addition, this 4th embodiment also can combine with second embodiment.In the case, under the state shown in Fig. 6 A and the 6B, carrying out with source electrode 21s/ drain electrode 21d is mask is removed acceptor material or donor material from contact layer 19 technology.This technology can be carried out with the identical mode described in second embodiment.
By this way, through combining this 4th embodiment and second embodiment, can make the content of acceptor material or donor material in contact layer 19 parts under the source electrode 21s/ drain electrode 21d be higher than the content of other parts.As a result, can make in contact layer 19 parts under the source electrode 21s/ drain electrode 21d to comprise the acceptor material or the donor material of q.s, thereby reduce the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.On the other hand, the acceptor material in other parts of contact layer 19 or the content of donor material can be set at little value, thus isolated component effectively.
As a result, can obtain a kind of thin-film transistor structure, it can be fit to high integration, has the ability of precipitousization of impelling improvement of ON electric current and sub-threshold slope simultaneously.
5. the 5th embodiment
Fig. 8 is the sectional view of the thin-film transistor 1-5 of the 5th embodiment.Thin-film transistor 1-5 shown in Figure 8 has end contact top gate structure, and source electrode 21s/ drain electrode 21d is arranged on the substrate 11.On substrate 11, the stacked body of contact layer 19 and organic semiconductor layer 17 is provided on the part between source electrode 21s and the drain electrode 21d successively.This stacked body is patterned to island, and is provided as the state on the edge that the island marginal portion overlaps the source electrode 21s/ drain electrode 21d that is oppositely arranged.In addition, gate insulating film 15 is provided on the substrate 11 with the state of covered substrate 11.Gate electrode 13 is corresponding to the position of the part between source electrode 21s and the drain electrode 21d, be provided on the gate insulating film 15 with the state of the core that strides across organic semiconductor layer 17.
In above-mentioned basis the 5th embodiment, similar with first embodiment, the contact layer 19 that has identical patterns with organic semiconductor layer 17 is stacked on the organic semiconductor layer 17, and contact layer 19 comprises organic semiconducting materials and acceptor material or donor material.Hereinafter, the details such as material formation of each parts can be basically the same as those in the first embodiment.
Manufacturing approach
Next, the manufacturing process of the thin-film transistor 1-5 of the 5th embodiment will be described according to the cross section artwork of Fig. 9 A and 9B.
At first, shown in Fig. 9 A, source electrode 21s and drain electrode 21d are formed on the substrate 11.The formation of source electrode 21s/ drain electrode 21d and first embodiment is said carries out similarly.In other words, electrode preferably forms micro pattern through using photoetching process, and can use the shadow mask method and form as another kind of method.
Next, on the substrate 11 that is formed with source electrode 21s/ drain electrode 21d, the stacked body of contact layer 19 and organic semiconductor layer 17 carries out island on the part between source electrode 21s and the drain electrode 21d pattern forms.
Here, for example, through using the pattern vapour deposition process that adopts mask; At first; Organic semiconducting materials and acceptor material or donor material codeposition form with the pattern that carries out contact layer 19, and then, the organic semiconducting materials vapour deposition forms with the pattern that carries out organic semiconductor layer 17.In addition, for example, through the application of printed method, at first, adopt black liquid to carry out the pattern printing of contact layer 19, organic semiconducting materials and acceptor material or donor material are mixed with each other in the black liquid, then, can carry out the pattern printing of organic semiconductor layer 17.In addition, do not have patterning at contact layer 19 and organic semiconductor layer 17, and element be needn't isolate the time, layer 19 and 17 is coating filmform successively.
Next, shown in Fig. 9 B, gate insulating film 15 is formed on the substrate 11 with the state of the stacked body of covering source electrode 21s/ drain electrode 21d, contact layer 19 and organic semiconductor layer 17.Under the situation that adopts organic insulating material, the film of gate insulating film 15 forms and comprises that through application the coating side of print process carries out, for example, and spin-coating method, silk screen printing, intaglio printing and ink-jet method.Equally, under the situation that adopts inorganic insulating material, film forms through using vapour deposition, sputter and CVD method and carries out.
Thereafter, as shown in Figure 8, gate electrode 13 is formed on the gate insulating film 15.The formation of gate electrode 13 is to carry out with the said identical mode of first embodiment.In other words, the resist pattern forms through photoetching process, and the pattern etching of metallic material film to adopt the resist pattern be that mask carries out, but perhaps application of printed technology, for example, silk screen printing, intaglio printing and ink-jet.
According to the 5th above-mentioned embodiment, similar with first embodiment, between organic semiconductor layer 17 and source electrode 21s/ drain electrode 21d, contact layer 19 is provided as and comprises acceptor material or donor material as the impurity in the organic semiconducting materials.As a result, contact layer 19 has better conductivity than organic semiconductor layer 17, thereby has reduced the contact resistance between organic semiconductor layer 17 and the source electrode 21s/ drain electrode 21d.
In addition; Because the conductivity of contact layer 19 is by the content adjustment of acceptor material or donor material; So, even when contact layer 19 former states are stayed between source electrode 21s and the drain electrode 21d as organic semiconductor layer 17 a part of, also can prevent the increase of OFF electric current.Therefore, contact layer 19 to be becoming the state that covers between the source electrode 21s/ drain electrode 21d with organic semiconductor layer 17 identical pattern, thereby can cover the step bight of source electrode 21s/ drain electrode 21d.As a result, even when in organic semiconductor layer 17, forming the film thickness that has as thin as a wafer, can prevent that also organic semiconductor layer 17 from breaking at the step place of source electrode 21s/ drain electrode 21d.For this reason, can reduce volume resistance, volume resistance depends on the distance (that is the film thickness of organic semiconductor layer 17) of the channel region ch that forms on source electrode 21s/ drain electrode 21d and the organic semiconductor layer 17.
As a result, can in thin-film transistor 1-5, impel the improvement of ON electric current and precipitousization of sub-threshold slope, use miniaturization processes simultaneously with end contact top gate structure.
6. the 6th embodiment
Next, the structure that description is comprised the display unit of the thin-film transistor of constructing described in the previous embodiment.Here, the active matrix type display of employing organic electroluminescent device EL will be described as the example of display unit.
The layer structure of display unit
Figure 10 is the organigram of three pixels of using the display unit 30 of the embodiment of the invention.Display unit 30 adopts the thin-film transistor structure of the embodiment of the invention of example among first to the 5th embodiment, and the thin-film transistor 1-1 that the structure that illustrates provides the top contact bottom grating structure described in first embodiment as an example.
Shown in figure 10, display unit 30 is active matrix type displays 30, wherein adopts the image element circuit of thin-film transistor 1-1 and connected organic electroluminescent device EL to be arranged on each pixel on the substrate 11.
The top of substrate 11 is provided with the circuit that adopts thin-film transistor 1-1, be coated with passivating film 31, and planarization insulating film 33 provides at an upper portion thereof.In planarization insulating film 31 and passivating film 31, the connecting hole 31a that arrives each thin-film transistor 1-1 is provided.On planarization insulating film 31, formation is connected to thin-film transistor through each connecting hole 31a pixel electrode 35 is set.
Be coated with window dielectric film 37 around each pixel electrode 35, and element is isolated from each other.The top of each pixel electrode 35 that element is isolated from each other is coated with organic luminescence function layer 39r, 39g and the 39b of every kind of color, and the public common electrode 41 of each pixel is provided as the state that covers each layer.Each of organic luminescence function layer 39r, 39g and 39b all has and comprises the stacked structure of organic luminous layer at least, and organic luminous layer forms because of the different patterns that carry out of the structure of each pixel at least, and can have the layer public to each pixel.Common electrode 41 for example forms negative electrode, if the display unit of producing is to extract the upper surface light emitting-type of luminous light from the opposition side of substrate 11, then common electrode 41 forms euphotic electrode.
As stated, organic luminescence function layer 39r, 39g and 39b are plugged in the part between pixel electrode 35 and the common electrode 41 in each pixel, form organic electroluminescent device EL.In addition, although do not illustrate, protective layer is formed on the substrate 11 that is formed with organic electroluminescent device EL, and through the adhesive bond hermetic sealing substrate, thereby constructed display unit 30.
The circuit structure of display unit
Figure 11 shows the example of the circuit structure diagram of display unit 30.In addition, circuit structure described here is merely example.
Shown in figure 11, on the substrate 11 of display unit 30, viewing area 11a and neighboring area 11b thereof are set.In the 11a of viewing area, a plurality of scan lines 51 and a plurality of holding wires 53 are distribution in length and breadth, and is configured to pixel array portion, and pixel a is provided as corresponding to each cross section on it.In addition, in the 11b of neighboring area, the scan line drive circuit 55 of scanning and driven sweep line 51 is set and the signal-line driving circuit 57 of picture signal (that is input signal) is provided for holding wire 53 according to monochrome information.
The image element circuit that each cross section of scan line 51 and holding wire 53 provides for example comprises switching thin-film transistor Tr1, drive thin film transistors Tr2, keeps capacitor C s and electroluminescent cell EL.
In display unit 30, because the driving of scan line drive circuit 55, the picture signal that writes through switching thin-film transistor Tr1 from holding wire 53 remains on the maintenance capacitor C s.And, depend on that the electric current of inhibit signal amount is provided to organic electroluminescent device EL from drive thin film transistors Tr2, thereby organic electroluminescent device EL is luminous with the brightness according to current value.In addition, drive thin film transistors Tr2 is connected to utility power line (Vcc) 59.
In addition, the structure of aforesaid image element circuit is merely example, and capacitor element or a plurality of transistor can optionally be provided at image element circuit to constitute image element circuit.In addition, the drive circuit of necessity increases to neighboring area 11b according to the change of image element circuit.
In such circuit structure, thin-film transistor Tr1 and Tr2 are configured to the thin-film transistor according to the embodiment of the invention of the foregoing description example.In addition, Figure 10 shows the sectional view of the part that thin-film transistor Tr2 and organic electroluminescent device EL pile up, as the sectional view of three pixels in the display unit 30 of circuit structure as stated.Switching thin-film transistor Tr1 also is formed on the identical layer with drive thin film transistors Tr2 with capacitor element Cs.In addition, Figure 11 shows thin-film transistor Tr1 and Tr2 is the situation of p channel type.
In the display unit 30 of constructing as stated, of first to the 5th embodiment, the thin-film transistor 1-1 that has satisfied element characteristic through application miniaturization processes and utilization constitutes image element circuit.This makes its high functionality that can realize pixel and high integration.
In addition, in aforesaid the 6th embodiment, organic EL display is described as the example according to the display unit of the embodiment of the invention.Yet, can be widely used in according to the display unit of the embodiment of the invention and to adopt the display unit, particularly thin-film transistor of thin-film transistor to be connected to the active matrix type display of pixel electrode, and can obtain same effect.As such display unit, for example, example liquid crystal indicator or electrophoresis type display device, and can obtain identical effect.
7. the 7th embodiment
Figure 12 to 16G has described the example according to the electronic equipment of the invention described above embodiment.Electronic equipment described here is the electronic equipment of the display unit described in the 6th embodiment as the display part.In addition, according to the display unit of the embodiment of the invention, its example is described in the 6th embodiment, can be applicable to the display part of the electronic equipment of all spectra, and its demonstration is input to the picture signal that produces in picture signal and the electronic equipment of electronic equipment.Hereinafter, with the example of describing the electronic equipment of using the embodiment of the invention.
Figure 12 is the perspective view that the television set of using the embodiment of the invention is shown.According to comprising image display panel part 101 with the television set of example, it has front panel 102 or filter glass 103 etc., and image display panel part 101 utilizes the display unit according to the embodiment of the invention to form.
Figure 13 A and 13B are the sketch mapes that the digital camera of using the embodiment of the invention is shown, and Figure 13 A is the perspective view when before it, looking sideways, and Figure 13 B is the perspective view when looking sideways thereafter.According to should comprising luminous component 111, display part 112, menu switch 113 and the shutter release button 114 etc. that are used to glisten with the digital camera of example, and display part 112 is through adopting the display unit manufacturing according to the embodiment of the invention.
Figure 14 illustrates the perspective view of application according to the notebook personal computer of the embodiment of the invention.According to comprising keyboard 122 and display part 123 with the notebook personal computer of example; Keyboard 122 is operated when character etc. is input to main body 121; Display part 123 display images etc., and display part 123 employings are according to the display unit manufacturing of the embodiment of the invention.
Figure 15 is the perspective view that the video camera of using the embodiment of the invention is shown.According to should comprising main part 131, the target imaging lens 132 on side forward, the beginning/shutdown switch 133 that is used to make a video recording, display part 134 etc. with the video camera of example, and the display unit manufacturing adopted according to the embodiment of the invention of display part 134.
Figure 16 A to 16G illustrates the sketch map of application according to the mobile terminal apparatus (for example, mobile phone) of the embodiment of the invention, and Figure 16 A is the front view of opening; Figure 16 B is its end view; Figure 16 C is the front view of closed condition, and Figure 16 D is its left side view, and Figure 16 E is its right side view; Figure 16 F is its vertical view, and Figure 16 G is its upward view.According to comprising upper shell 141, lower house 142, coupling part (, hinge fraction) 143, display 144, slave display 145, picture lamp 146, camera 147 etc. here with the mobile phone of example.In the middle of them, the display unit manufacturing that display 144 or slave display 145 adopt according to the embodiment of the invention.
In addition, aforesaid the 7th embodiment each example of showing display unit is as according to the electronic equipment of the embodiment of the invention and to adopt display unit be the example of the electronic equipment of display part.Yet, be not limited to adopt the application of such display part according to the electronic equipment of the embodiment of the invention, but can be widely used in the electronic equipment that is provided with thin-film transistor with the state that is connected to conductive pattern.As such example, embodiments of the invention can be applicable to the electronic equipment such as ID label and transducer, and can realize identical effect.
The application comprises disclosed related subject among the japanese priority patent application JP2010-154779 that submitted Japan Patent office on July 7th, 2010, and its full content is incorporated into this by reference.
Those skilled in the art should be understood that, in the scope of claim or its equivalent, according to design demand and other factors, can carry out various modifications, combination, part combination and replacement.

Claims (20)

1. thin-film transistor,
The contact layer that wherein comprises organic semiconducting materials and acceptor material or donor material is provided between organic semiconductor layer and the source electrode/drain electrode.
2. thin-film transistor according to claim 1,
Wherein this contact layer has identical pattern form with this organic semiconductor layer, and
Wherein this source electrode/this drain electrode is stacked on this organic semiconductor layer across this contact layer.
3. thin-film transistor according to claim 2,
Wherein, In this contact layer, the content of this acceptor material or this donor material is higher than the content of this acceptor material between this source electrode and this drain electrode or this donor material in the part that plugs between the part that plugs between this organic semiconductor layer and this source electrode and this organic semiconductor layer and this drain electrode.
4. thin-film transistor according to claim 1,
Wherein, when the conduction type of this organic semiconductor layer was the p type, this contact layer comprised this acceptor material, and
Wherein, when the conduction type of this organic semiconductor layer was the n type, this contact layer comprised this donor material.
5. thin-film transistor according to claim 1,
Wherein this contact layer comprises identical organic material with this organic semiconductor layer.
6. thin-film transistor according to claim 1 comprises:
Gate electrode;
Gate insulating film covers this gate electrode;
This organic semiconductor layer is to be stacked on the state setting on this gate electrode across this gate insulating film;
This contact layer is stacked on this organic semiconductor layer; And
This source electrode/drain electrode, its end is to plug this gate electrode therebetween and relative state is arranged on this contact layer.
7. thin-film transistor according to claim 6,
Wherein, diaphragm is provided providing on this gate insulating film of this organic semiconductor layer, this diaphragm has the top that covers this gate electrode and is exposed to the shape of part of this organic semiconductor layer of the both sides of this gate electrode, and
Wherein this contact layer is provided on this organic semiconductor layer that is exposed by this diaphragm at least.
8. thin-film transistor according to claim 7,
Wherein this diaphragm has the opening of part of this organic semiconductor layer of the both sides that are exposed to this gate electrode, and this diaphragm covers the top of this gate insulating film.
9. thin-film transistor according to claim 7,
Wherein this contact layer breaks off because of the step of this diaphragm on this diaphragm with on this organic semiconductor layer.
10. thin-film transistor according to claim 7,
Wherein this contact layer is on the top of this diaphragm and between this source electrode and this drain electrode, break off.
11. a method of making thin-film transistor comprises:
On substrate, form organic semiconductor layer;
On this organic semiconductor layer, form the contact layer that comprises organic semiconducting materials and acceptor material or donor material; And
The state that on this contact layer, is oppositely arranged with the end forms source electrode/drain electrode.
12. method according to claim 11,
Wherein, before forming this source electrode/drain electrode, this organic semiconductor layer is patterned as with this contact layer and is of similar shape.
13. method according to claim 12,
After forming this source electrode/drain electrode, be the technology that mask carries out removing from this contact layer this acceptor material or this donor material wherein with this source electrode/drain electrode.
14. method according to claim 12,
Wherein through this this acceptor material of organic semiconducting materials selective etch or this donor material that constitutes this contact layer carried out from the technology of this contact layer this acceptor material of removal or donor material.
15. method according to claim 12,
Wherein carry out heat treated, thereby carry out removing the technology of this acceptor material or this donor material from this contact layer in the temperature of the sublimation temperature that is equal to or less than this organic semiconducting materials that constitutes this contact layer and in the temperature of the sublimation temperature that is equal to or higher than this acceptor material or this donor material.
16. method according to claim 11,
Wherein, before forming this organic semiconductor layer, carry out on this substrate, forming the technology of gate insulating film at formation gate electrode on this substrate and with the state that covers this gate electrode; And
Wherein, after forming this organic semiconductor layer and this contact layer, this source electrode/this drain electrode is arranged on this contact layer with the end and is inserted with the state formation of this gate electrode therebetween.
17. method according to claim 16,
Wherein, before forming this contact layer, form diaphragm, this diaphragm has the top that covers this gate electrode and is exposed to the shape of part of this organic semiconductor layer of the both sides of this gate electrode, and
Wherein, when forming this contact layer, this contact layer forms and is stacked at least on this organic semiconductor layer that is exposed by this diaphragm.
18. method according to claim 17,
Wherein, when forming this contact layer, this contact layer breaks off because of the step of this diaphragm on this diaphragm with on this organic semiconductor layer.
19. a display unit comprises:
Thin-film transistor, the contact layer that wherein comprises organic semiconducting materials and acceptor material or donor material is provided between organic semiconductor layer and the source electrode/drain electrode; And
Pixel electrode is connected to this thin-film transistor.
20. an electronic equipment comprises thin-film transistor, the contact layer that in this thin-film transistor, comprises organic semiconducting materials and acceptor material or donor material is provided between organic semiconductor layer and the source electrode/drain electrode.
CN2011101815326A 2010-07-07 2011-06-30 Thin-film transistor and manufacturing approach thereof, display unit and electronic equipment Pending CN102315388A (en)

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JP2010-154779 2010-07-07

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Application publication date: 20120111