CN102272952A - 光电子半导体器件 - Google Patents

光电子半导体器件 Download PDF

Info

Publication number
CN102272952A
CN102272952A CN2010800044387A CN201080004438A CN102272952A CN 102272952 A CN102272952 A CN 102272952A CN 2010800044387 A CN2010800044387 A CN 2010800044387A CN 201080004438 A CN201080004438 A CN 201080004438A CN 102272952 A CN102272952 A CN 102272952A
Authority
CN
China
Prior art keywords
active layer
semiconductor material
opto
indium
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800044387A
Other languages
English (en)
Chinese (zh)
Inventor
亚历山大·贝雷斯
马蒂亚斯·扎巴蒂尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102272952A publication Critical patent/CN102272952A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Led Devices (AREA)
CN2010800044387A 2009-01-16 2010-01-05 光电子半导体器件 Pending CN102272952A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009004895.2 2009-01-16
DE102009004895A DE102009004895A1 (de) 2009-01-16 2009-01-16 Optoelektronisches Halbleiterbauelement
PCT/EP2010/050039 WO2010081754A1 (de) 2009-01-16 2010-01-05 Optoelektronisches halbleiterbauelement

Publications (1)

Publication Number Publication Date
CN102272952A true CN102272952A (zh) 2011-12-07

Family

ID=42026389

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800044387A Pending CN102272952A (zh) 2009-01-16 2010-01-05 光电子半导体器件

Country Status (7)

Country Link
US (1) US8502267B2 (enExample)
EP (1) EP2380215A1 (enExample)
JP (1) JP2012515445A (enExample)
KR (1) KR20110110804A (enExample)
CN (1) CN102272952A (enExample)
DE (1) DE102009004895A1 (enExample)
WO (1) WO2010081754A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107565383A (zh) * 2017-10-24 2018-01-09 超晶科技（北京）有限公司 一种铟磷铋材料及其制备方法和使用该材料的激光器及其制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5661671B2 (ja) * 2012-03-26 2015-01-28 株式会社東芝 半導体発光素子
US11379016B2 (en) 2019-05-23 2022-07-05 Intel Corporation Methods and apparatus to operate closed-lid portable computers
US12346191B2 (en) 2020-06-26 2025-07-01 Intel Corporation Methods, systems, articles of manufacture, and apparatus to dynamically schedule a wake pattern in a computing system
US12189452B2 (en) 2020-12-21 2025-01-07 Intel Corporation Methods and apparatus to improve user experience on computing devices

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001503566A (ja) 1995-10-19 2001-03-13 サーノフ コーポレイション 半導体レーザ・ダイオード
JP4186306B2 (ja) * 1998-05-06 2008-11-26 松下電器産業株式会社 半導体装置
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
JP2001160627A (ja) * 1999-11-30 2001-06-12 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6472680B1 (en) * 1999-12-31 2002-10-29 Matsushita Electric Industrial Co., Ltd. Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
JP2001326426A (ja) * 2000-05-17 2001-11-22 Sharp Corp Ｉｉｉ−ｖ族化合物半導体発光素子及びその製造方法、並びに情報記録再生装置
JP2002050795A (ja) * 2000-07-31 2002-02-15 Kansai Tlo Kk ＩｎＧａＮ系発光ダイオード
US6489636B1 (en) * 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
EP1396878A4 (en) * 2001-03-30 2008-09-03 Toyoda Gosei Kk MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR ELEMENT
US20060006375A1 (en) * 2003-04-14 2006-01-12 Chen Ou Light Mixing LED
US6995389B2 (en) * 2003-06-18 2006-02-07 Lumileds Lighting, U.S., Llc Heterostructures for III-nitride light emitting devices
JP4292925B2 (ja) * 2003-09-16 2009-07-08 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
AU2005322570A1 (en) 2004-10-08 2006-07-06 The Regents Of The University Of California High efficiency light-emitting diodes
DE102004050891B4 (de) * 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
US7368759B2 (en) * 2005-09-30 2008-05-06 Hitachi Cable, Ltd. Semiconductor light-emitting device
JP2008243954A (ja) * 2007-03-26 2008-10-09 Sumitomo Electric Ind Ltd 面発光型半導体光デバイス
US20080277686A1 (en) 2007-05-08 2008-11-13 Huga Optotech Inc. Light emitting device and method for making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107565383A (zh) * 2017-10-24 2018-01-09 超晶科技（北京）有限公司 一种铟磷铋材料及其制备方法和使用该材料的激光器及其制备方法
CN107565383B (zh) * 2017-10-24 2019-02-12 超晶科技（北京）有限公司 一种铟磷铋材料及其制备方法和使用该材料的激光器及其制备方法

Also Published As

Publication number Publication date
DE102009004895A1 (de) 2010-07-22
US20110284918A1 (en) 2011-11-24
EP2380215A1 (de) 2011-10-26
KR20110110804A (ko) 2011-10-07
JP2012515445A (ja) 2012-07-05
WO2010081754A1 (de) 2010-07-22
US8502267B2 (en) 2013-08-06

Similar Documents

Publication Publication Date Title
US8513694B2 (en) Nitride semiconductor device and manufacturing method of the device
CN104919604B (zh) 氮化物半导体发光元件
CN101262037B (zh) 氮化物半导体发光装置
KR101732524B1 (ko) 붕소를 포함하는 ⅲ-질화물 발광 장치
CN104272477B (zh) 氮化物半导体发光元件
US9911898B2 (en) Ultraviolet light-emitting device
JP2008021986A (ja) 窒化物系半導体発光素子およびその製造方法
JPWO2019102557A1 (ja) 窒化物半導体発光素子
CN101765924B (zh) 半导体发光器件和制造该半导体发光器件的方法
CN102272952A (zh) 光电子半导体器件
US7452789B2 (en) Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element
US12336335B2 (en) Light-emitting element and method of producing the same
JP3589000B2 (ja) 窒化ガリウム系化合物半導体発光素子
US10672948B2 (en) Methods for producing light extraction structures for semiconductor devices
JP2008227103A (ja) ＧａＮ系半導体発光素子
JP7526915B2 (ja) 発光素子
JP7526916B2 (ja) 発光素子
JP2008118048A (ja) ＧａＮ系半導体発光素子
KR20080000098A (ko) 질화갈륨계 화합물 반도체 및 그 제조방법
KR20120041439A (ko) 질화물계 반도체 소자 및 그의 제조 방법
JP2000174336A (ja) ＧａＮ系半導体発光素子およびその製造方法
KR20120043270A (ko) 질화물계 반도체 발광소자 및 그의 제조 방법
KR20120117721A (ko) 질화물계 반도체 발광소자의 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20111207