DE102009004895A1 - Optoelektronisches Halbleiterbauelement - Google Patents

Optoelektronisches Halbleiterbauelement Download PDF

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Publication number
DE102009004895A1
DE102009004895A1 DE102009004895A DE102009004895A DE102009004895A1 DE 102009004895 A1 DE102009004895 A1 DE 102009004895A1 DE 102009004895 A DE102009004895 A DE 102009004895A DE 102009004895 A DE102009004895 A DE 102009004895A DE 102009004895 A1 DE102009004895 A1 DE 102009004895A1
Authority
DE
Germany
Prior art keywords
semiconductor material
compound semiconductor
active layer
indium
optoelectronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009004895A
Other languages
German (de)
English (en)
Inventor
Alexander Dr. Behres
Matthias Dr. Sabathil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102009004895A priority Critical patent/DE102009004895A1/de
Priority to PCT/EP2010/050039 priority patent/WO2010081754A1/de
Priority to JP2011545708A priority patent/JP2012515445A/ja
Priority to EP10704104A priority patent/EP2380215A1/de
Priority to KR1020117018948A priority patent/KR20110110804A/ko
Priority to CN2010800044387A priority patent/CN102272952A/zh
Priority to US13/142,885 priority patent/US8502267B2/en
Publication of DE102009004895A1 publication Critical patent/DE102009004895A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Led Devices (AREA)
DE102009004895A 2009-01-16 2009-01-16 Optoelektronisches Halbleiterbauelement Withdrawn DE102009004895A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102009004895A DE102009004895A1 (de) 2009-01-16 2009-01-16 Optoelektronisches Halbleiterbauelement
PCT/EP2010/050039 WO2010081754A1 (de) 2009-01-16 2010-01-05 Optoelektronisches halbleiterbauelement
JP2011545708A JP2012515445A (ja) 2009-01-16 2010-01-05 オプトエレクトロニクス半導体部品
EP10704104A EP2380215A1 (de) 2009-01-16 2010-01-05 Optoelektronisches halbleiterbauelement
KR1020117018948A KR20110110804A (ko) 2009-01-16 2010-01-05 광전 반도체 소자
CN2010800044387A CN102272952A (zh) 2009-01-16 2010-01-05 光电子半导体器件
US13/142,885 US8502267B2 (en) 2009-01-16 2010-01-05 Optoelectronic semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009004895A DE102009004895A1 (de) 2009-01-16 2009-01-16 Optoelektronisches Halbleiterbauelement

Publications (1)

Publication Number Publication Date
DE102009004895A1 true DE102009004895A1 (de) 2010-07-22

Family

ID=42026389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009004895A Withdrawn DE102009004895A1 (de) 2009-01-16 2009-01-16 Optoelektronisches Halbleiterbauelement

Country Status (7)

Country Link
US (1) US8502267B2 (enExample)
EP (1) EP2380215A1 (enExample)
JP (1) JP2012515445A (enExample)
KR (1) KR20110110804A (enExample)
CN (1) CN102272952A (enExample)
DE (1) DE102009004895A1 (enExample)
WO (1) WO2010081754A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5661671B2 (ja) * 2012-03-26 2015-01-28 株式会社東芝 半導体発光素子
CN107565383B (zh) * 2017-10-24 2019-02-12 超晶科技（北京）有限公司 一种铟磷铋材料及其制备方法和使用该材料的激光器及其制备方法
US11379016B2 (en) 2019-05-23 2022-07-05 Intel Corporation Methods and apparatus to operate closed-lid portable computers
KR20230027000A (ko) 2020-06-26 2023-02-27 인텔 코포레이션 컴퓨팅 시스템에서 웨이크 패턴을 동적으로 스케줄링하기 위한 방법들, 시스템들, 제조 물품들 및 장치들
US12189452B2 (en) 2020-12-21 2025-01-07 Intel Corporation Methods and apparatus to improve user experience on computing devices

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001326426A (ja) * 2000-05-17 2001-11-22 Sharp Corp Ｉｉｉ−ｖ族化合物半導体発光素子及びその製造方法、並びに情報記録再生装置
DE10213395A1 (de) * 2001-03-29 2002-10-10 Lumileds Lighting Us Indiumgalliumnitrid-Glättungsstrukturen für III-Nitried-Anordnungen
US6472680B1 (en) * 1999-12-31 2002-10-29 Matsushita Electric Industrial Co., Ltd. Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
EP1396878A1 (en) * 2001-03-30 2004-03-10 Toyoda Gosei Co., Ltd. Production method for semiconductor substrate and semiconductor element
US20040256611A1 (en) * 2003-06-18 2004-12-23 Kim James C. Heterostructures for III-nitride light emitting devices
WO2005029595A1 (en) * 2003-09-16 2005-03-31 Toyoda Gosei Co., Ltd. Group iii-nitride-based compound semiconductor device
DE112004000211T5 (de) * 2003-01-27 2005-12-29 Finisar Corp., Sunnyvale System und Verfahren unter Verwendung von Migration-Enhanced-Epitaxie zum Abflachen aktiver Schichten und zur mechanischen Stabilisierung von mit oberflächenemittierenden Lasern assoziierten Quantentöpfen
DE102004050891A1 (de) * 2004-10-19 2006-04-20 LumiLeds Lighting, U.S., LLC, San Jose Lichtmittierende Halbleitervorrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001503566A (ja) 1995-10-19 2001-03-13 サーノフ コーポレイション 半導体レーザ・ダイオード
JP4186306B2 (ja) * 1998-05-06 2008-11-26 松下電器産業株式会社 半導体装置
JP2001160627A (ja) 1999-11-30 2001-06-12 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2002050795A (ja) * 2000-07-31 2002-02-15 Kansai Tlo Kk ＩｎＧａＮ系発光ダイオード
US20060006375A1 (en) * 2003-04-14 2006-01-12 Chen Ou Light Mixing LED
AU2005322570A1 (en) * 2004-10-08 2006-07-06 The Regents Of The University Of California High efficiency light-emitting diodes
US7368759B2 (en) * 2005-09-30 2008-05-06 Hitachi Cable, Ltd. Semiconductor light-emitting device
JP2008243954A (ja) * 2007-03-26 2008-10-09 Sumitomo Electric Ind Ltd 面発光型半導体光デバイス
US20080277686A1 (en) 2007-05-08 2008-11-13 Huga Optotech Inc. Light emitting device and method for making the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6472680B1 (en) * 1999-12-31 2002-10-29 Matsushita Electric Industrial Co., Ltd. Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
JP2001326426A (ja) * 2000-05-17 2001-11-22 Sharp Corp Ｉｉｉ−ｖ族化合物半導体発光素子及びその製造方法、並びに情報記録再生装置
DE10213395A1 (de) * 2001-03-29 2002-10-10 Lumileds Lighting Us Indiumgalliumnitrid-Glättungsstrukturen für III-Nitried-Anordnungen
US6489636B1 (en) * 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
EP1396878A1 (en) * 2001-03-30 2004-03-10 Toyoda Gosei Co., Ltd. Production method for semiconductor substrate and semiconductor element
DE112004000211T5 (de) * 2003-01-27 2005-12-29 Finisar Corp., Sunnyvale System und Verfahren unter Verwendung von Migration-Enhanced-Epitaxie zum Abflachen aktiver Schichten und zur mechanischen Stabilisierung von mit oberflächenemittierenden Lasern assoziierten Quantentöpfen
US20040256611A1 (en) * 2003-06-18 2004-12-23 Kim James C. Heterostructures for III-nitride light emitting devices
WO2005029595A1 (en) * 2003-09-16 2005-03-31 Toyoda Gosei Co., Ltd. Group iii-nitride-based compound semiconductor device
DE102004050891A1 (de) * 2004-10-19 2006-04-20 LumiLeds Lighting, U.S., LLC, San Jose Lichtmittierende Halbleitervorrichtung

Also Published As

Publication number Publication date
KR20110110804A (ko) 2011-10-07
US20110284918A1 (en) 2011-11-24
US8502267B2 (en) 2013-08-06
EP2380215A1 (de) 2011-10-26
WO2010081754A1 (de) 2010-07-22
CN102272952A (zh) 2011-12-07
JP2012515445A (ja) 2012-07-05

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