CN102256445B - 一种有机基板的制造方法 - Google Patents
一种有机基板的制造方法 Download PDFInfo
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- CN102256445B CN102256445B CN 201110131532 CN201110131532A CN102256445B CN 102256445 B CN102256445 B CN 102256445B CN 201110131532 CN201110131532 CN 201110131532 CN 201110131532 A CN201110131532 A CN 201110131532A CN 102256445 B CN102256445 B CN 102256445B
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000012545 processing Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000005266 casting Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 4
- -1 pottery Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 238000005553 drilling Methods 0.000 abstract description 6
- 238000001465 metallisation Methods 0.000 abstract description 6
- 238000009713 electroplating Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 21
- 239000010410 layer Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
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Priority Applications (1)
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CN 201110131532 CN102256445B (zh) | 2011-05-19 | 2011-05-19 | 一种有机基板的制造方法 |
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CN 201110131532 CN102256445B (zh) | 2011-05-19 | 2011-05-19 | 一种有机基板的制造方法 |
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CN102256445A CN102256445A (zh) | 2011-11-23 |
CN102256445B true CN102256445B (zh) | 2013-07-31 |
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CN 201110131532 Active CN102256445B (zh) | 2011-05-19 | 2011-05-19 | 一种有机基板的制造方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1465213A (zh) * | 2001-07-18 | 2003-12-31 | 松下电器产业株式会社 | 电路形成基板及电路形成基板的制造方法 |
JP3962295B2 (ja) * | 2002-07-29 | 2007-08-22 | 株式会社日本製鋼所 | 電子基板のインサート射出成形用金型 |
CN101850593A (zh) * | 2009-03-31 | 2010-10-06 | 本田技研工业株式会社 | 嵌件成型方法及装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291751A (ja) * | 1992-04-14 | 1993-11-05 | Hitachi Chem Co Ltd | 金属芯入り印刷配線用基板の製造方法 |
JPH08181417A (ja) * | 1994-12-26 | 1996-07-12 | Furukawa Electric Co Ltd:The | 回路材の製造方法 |
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2011
- 2011-05-19 CN CN 201110131532 patent/CN102256445B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1465213A (zh) * | 2001-07-18 | 2003-12-31 | 松下电器产业株式会社 | 电路形成基板及电路形成基板的制造方法 |
JP3962295B2 (ja) * | 2002-07-29 | 2007-08-22 | 株式会社日本製鋼所 | 電子基板のインサート射出成形用金型 |
CN101850593A (zh) * | 2009-03-31 | 2010-10-06 | 本田技研工业株式会社 | 嵌件成型方法及装置 |
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CN102256445A (zh) | 2011-11-23 |
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Owner name: CHENGDU RHOPTICS OPTOELECTRONIC TECHNOLOGY CO., LT Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20140806 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 610041 CHENGDU, SICHUAN PROVINCE |
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Effective date of registration: 20140806 Address after: 610041, Sichuan, Chengdu hi tech Development Zone, 188 Rui Rui Road, No. 6, No. 2 building Patentee after: CHENGDU RUIHUA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Institute of Microelectronics Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20210218 Address after: 214028 building D1, China Sensor Network International Innovation Park, No. 200, Linghu Avenue, New District, Wuxi City, Jiangsu Province Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: 2 / F, no.188-6, Zirui Avenue, Chengdu hi tech Development Zone, Sichuan 610041 Patentee before: CHENGDU RUIHUA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. |