CN102254917A - 薄膜晶体管阵列基板及其制法 - Google Patents
薄膜晶体管阵列基板及其制法 Download PDFInfo
- Publication number
- CN102254917A CN102254917A CN201110189950XA CN201110189950A CN102254917A CN 102254917 A CN102254917 A CN 102254917A CN 201110189950X A CN201110189950X A CN 201110189950XA CN 201110189950 A CN201110189950 A CN 201110189950A CN 102254917 A CN102254917 A CN 102254917A
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- 239000010409 thin film Substances 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 10
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110189950.XA CN102254917B (zh) | 2011-07-07 | 2011-07-07 | 薄膜晶体管阵列基板及其制法 |
US13/376,913 US8867004B2 (en) | 2011-07-07 | 2011-09-20 | Thin-film-transistor array substrate and manufacturing method thereof |
PCT/CN2011/079854 WO2013004050A1 (zh) | 2011-07-07 | 2011-09-20 | 薄膜晶体管阵列基板及其制法 |
US14/487,129 US9214483B2 (en) | 2011-07-07 | 2014-09-16 | Thin-film-transistor array substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110189950.XA CN102254917B (zh) | 2011-07-07 | 2011-07-07 | 薄膜晶体管阵列基板及其制法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102254917A true CN102254917A (zh) | 2011-11-23 |
CN102254917B CN102254917B (zh) | 2014-05-21 |
Family
ID=44982052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110189950.XA Active CN102254917B (zh) | 2011-07-07 | 2011-07-07 | 薄膜晶体管阵列基板及其制法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8867004B2 (zh) |
CN (1) | CN102254917B (zh) |
WO (1) | WO2013004050A1 (zh) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103018989A (zh) * | 2012-12-07 | 2013-04-03 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法和液晶显示装置 |
WO2013139054A1 (zh) * | 2012-03-19 | 2013-09-26 | 深圳市华星光电技术有限公司 | 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 |
CN103472647A (zh) * | 2013-09-22 | 2013-12-25 | 合肥京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
CN103499907A (zh) * | 2013-10-25 | 2014-01-08 | 合肥京东方光电科技有限公司 | 阵列基板、显示装置和阵列基板的制作方法 |
WO2014063386A1 (zh) * | 2012-10-22 | 2014-05-01 | 深圳市华星光电技术有限公司 | 液晶面板的驱动电路 |
US9025102B2 (en) | 2012-10-22 | 2015-05-05 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Drive circuit of liquid crystal panel |
CN104656328A (zh) * | 2013-11-15 | 2015-05-27 | 群创光电股份有限公司 | 显示面板及显示装置 |
WO2015192436A1 (zh) * | 2014-06-17 | 2015-12-23 | 深圳市华星光电技术有限公司 | Tft阵列基板结构 |
WO2016074295A1 (zh) * | 2014-11-14 | 2016-05-19 | 深圳市华星光电技术有限公司 | 一种液晶显示器及其阵列基板 |
WO2017076153A1 (zh) * | 2015-11-05 | 2017-05-11 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
CN107134473A (zh) * | 2016-02-29 | 2017-09-05 | 三星显示有限公司 | 显示装置 |
WO2021051528A1 (zh) * | 2019-09-17 | 2021-03-25 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
US11694614B2 (en) | 2016-09-23 | 2023-07-04 | Samsung Display Co., Ltd. | Display device |
US11721269B2 (en) | 2016-09-22 | 2023-08-08 | Samsung Display Co., Ltd. | Display device |
US11849615B2 (en) | 2016-11-29 | 2023-12-19 | Samsung Display Co., Ltd. | Display device with protection against electrostatic discharge |
US11895884B2 (en) | 2017-02-21 | 2024-02-06 | Samsung Display Co., Ltd. | Display device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160190157A1 (en) * | 2014-12-30 | 2016-06-30 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Pixel structure and manufacturing method thereof |
JP6376989B2 (ja) * | 2015-02-19 | 2018-08-22 | 株式会社ジャパンディスプレイ | 表示装置 |
CN106206746B (zh) * | 2016-09-28 | 2020-07-24 | 京东方科技集团股份有限公司 | 薄膜晶体管、goa电路、显示基板和显示装置 |
Citations (6)
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JP2003347558A (ja) * | 2002-05-23 | 2003-12-05 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法、並びに薄膜トランジスタ |
US20040080681A1 (en) * | 2000-06-09 | 2004-04-29 | Hong-Man Moon | Liquid crystal display device array substrate and method of manufacturing the same |
CN1987626A (zh) * | 2006-12-26 | 2007-06-27 | 友达光电股份有限公司 | 薄膜晶体管结构 |
CN101115333A (zh) * | 2006-07-24 | 2008-01-30 | 精工爱普生株式会社 | 电光装置用基板及电光装置以及电子设备 |
CN101359670A (zh) * | 2007-07-31 | 2009-02-04 | 北京京东方光电科技有限公司 | 一种有源驱动tft矩阵结构及其制造方法 |
US20110073860A1 (en) * | 2009-09-30 | 2011-03-31 | Sony Corporation | Semiconductor device and display device |
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JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR100464208B1 (ko) * | 2001-12-20 | 2005-01-03 | 엘지.필립스 엘시디 주식회사 | 액정 표시장치 및 그 구동방법 |
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CN101504500B (zh) | 2008-02-04 | 2011-08-31 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器阵列基板的像素结构 |
KR101572084B1 (ko) * | 2008-07-16 | 2015-11-26 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101294237B1 (ko) * | 2010-10-07 | 2013-08-07 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조방법 |
KR20120049716A (ko) * | 2010-11-09 | 2012-05-17 | 삼성전자주식회사 | 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
-
2011
- 2011-07-07 CN CN201110189950.XA patent/CN102254917B/zh active Active
- 2011-09-20 WO PCT/CN2011/079854 patent/WO2013004050A1/zh active Application Filing
- 2011-09-20 US US13/376,913 patent/US8867004B2/en active Active
-
2014
- 2014-09-16 US US14/487,129 patent/US9214483B2/en not_active Expired - Fee Related
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US20040080681A1 (en) * | 2000-06-09 | 2004-04-29 | Hong-Man Moon | Liquid crystal display device array substrate and method of manufacturing the same |
JP2003347558A (ja) * | 2002-05-23 | 2003-12-05 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法、並びに薄膜トランジスタ |
CN101115333A (zh) * | 2006-07-24 | 2008-01-30 | 精工爱普生株式会社 | 电光装置用基板及电光装置以及电子设备 |
CN1987626A (zh) * | 2006-12-26 | 2007-06-27 | 友达光电股份有限公司 | 薄膜晶体管结构 |
CN101359670A (zh) * | 2007-07-31 | 2009-02-04 | 北京京东方光电科技有限公司 | 一种有源驱动tft矩阵结构及其制造方法 |
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Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013139054A1 (zh) * | 2012-03-19 | 2013-09-26 | 深圳市华星光电技术有限公司 | 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 |
WO2014063386A1 (zh) * | 2012-10-22 | 2014-05-01 | 深圳市华星光电技术有限公司 | 液晶面板的驱动电路 |
US9025102B2 (en) | 2012-10-22 | 2015-05-05 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Drive circuit of liquid crystal panel |
CN103018989A (zh) * | 2012-12-07 | 2013-04-03 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法和液晶显示装置 |
US9500922B2 (en) | 2013-09-22 | 2016-11-22 | Boe Technology Group Co., Ltd. | Array substrate, liquid crystal display panel and display device |
CN103472647A (zh) * | 2013-09-22 | 2013-12-25 | 合肥京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
CN103472647B (zh) * | 2013-09-22 | 2016-04-06 | 合肥京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
CN103499907A (zh) * | 2013-10-25 | 2014-01-08 | 合肥京东方光电科技有限公司 | 阵列基板、显示装置和阵列基板的制作方法 |
CN103499907B (zh) * | 2013-10-25 | 2016-01-06 | 合肥京东方光电科技有限公司 | 阵列基板、显示装置和阵列基板的制作方法 |
CN104656328A (zh) * | 2013-11-15 | 2015-05-27 | 群创光电股份有限公司 | 显示面板及显示装置 |
CN104656328B (zh) * | 2013-11-15 | 2017-10-31 | 群创光电股份有限公司 | 显示面板及显示装置 |
GB2541342A (en) * | 2014-06-17 | 2017-02-15 | Shenzhen China Star Optoelect | TFT array substrate structure |
WO2015192436A1 (zh) * | 2014-06-17 | 2015-12-23 | 深圳市华星光电技术有限公司 | Tft阵列基板结构 |
GB2541342B (en) * | 2014-06-17 | 2018-12-12 | Shenzhen China Star Optoelect | TFT array substrate structure |
WO2016074295A1 (zh) * | 2014-11-14 | 2016-05-19 | 深圳市华星光电技术有限公司 | 一种液晶显示器及其阵列基板 |
WO2017076153A1 (zh) * | 2015-11-05 | 2017-05-11 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
US11493813B2 (en) | 2015-11-05 | 2022-11-08 | Boe Technology Group Co., Ltd. | Array substrate and display device |
CN107134473A (zh) * | 2016-02-29 | 2017-09-05 | 三星显示有限公司 | 显示装置 |
CN107134473B (zh) * | 2016-02-29 | 2023-11-07 | 三星显示有限公司 | 显示装置 |
US11721269B2 (en) | 2016-09-22 | 2023-08-08 | Samsung Display Co., Ltd. | Display device |
US11694614B2 (en) | 2016-09-23 | 2023-07-04 | Samsung Display Co., Ltd. | Display device |
US11849615B2 (en) | 2016-11-29 | 2023-12-19 | Samsung Display Co., Ltd. | Display device with protection against electrostatic discharge |
US11895884B2 (en) | 2017-02-21 | 2024-02-06 | Samsung Display Co., Ltd. | Display device |
WO2021051528A1 (zh) * | 2019-09-17 | 2021-03-25 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
Also Published As
Publication number | Publication date |
---|---|
CN102254917B (zh) | 2014-05-21 |
US8867004B2 (en) | 2014-10-21 |
US20150004759A1 (en) | 2015-01-01 |
WO2013004050A1 (zh) | 2013-01-10 |
US20130009155A1 (en) | 2013-01-10 |
US9214483B2 (en) | 2015-12-15 |
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