CN102254885B - 无源器件、无源器件埋入式电路板及其制造方法 - Google Patents
无源器件、无源器件埋入式电路板及其制造方法 Download PDFInfo
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- CN102254885B CN102254885B CN201010178678.0A CN201010178678A CN102254885B CN 102254885 B CN102254885 B CN 102254885B CN 201010178678 A CN201010178678 A CN 201010178678A CN 102254885 B CN102254885 B CN 102254885B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000853 adhesive Substances 0.000 claims description 56
- 230000001070 adhesive effect Effects 0.000 claims description 56
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000004070 electrodeposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 54
- 239000011889 copper foil Substances 0.000 description 7
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- 230000008054 signal transmission Effects 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- FSQQTNAZHBEJLS-UPHRSURJSA-N maleamic acid Chemical class NC(=O)\C=C/C(O)=O FSQQTNAZHBEJLS-UPHRSURJSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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CN201010178678.0A CN102254885B (zh) | 2010-05-20 | 2010-05-20 | 无源器件、无源器件埋入式电路板及其制造方法 |
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CN201010178678.0A CN102254885B (zh) | 2010-05-20 | 2010-05-20 | 无源器件、无源器件埋入式电路板及其制造方法 |
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CN102254885A CN102254885A (zh) | 2011-11-23 |
CN102254885B true CN102254885B (zh) | 2014-01-15 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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AT13232U1 (de) * | 2011-12-28 | 2013-08-15 | Austria Tech & System Tech | Verfahren zum herstellen einer aus wenigstens zwei leiterplattenbereichen bestehenden leiterplatte sowie leiterplatte |
CN107949166B (zh) * | 2017-11-30 | 2020-04-14 | 广州兴森快捷电路科技有限公司 | 埋置元件电路板的制作方法及埋置元件电路板 |
CN112201652A (zh) * | 2019-07-07 | 2021-01-08 | 深南电路股份有限公司 | 线路板及其制作方法 |
CN113692143B (zh) * | 2020-05-19 | 2023-01-17 | 鹏鼎控股(深圳)股份有限公司 | 具有内埋元件的线路板的制作方法 |
EP4017226A4 (en) | 2020-07-07 | 2023-07-19 | Shennan Circuits Co., Ltd. | INTEGRATED CIRCUIT CARD AND METHOD OF MANUFACTURING FOR INTEGRATED CIRCUIT CARD |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1253469A (zh) * | 1998-11-02 | 2000-05-17 | 塞拉特赫株式会社 | 阵列型多芯片器件及其制造方法 |
Family Cites Families (7)
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KR100476158B1 (ko) * | 2000-12-11 | 2005-03-15 | 주식회사 아모텍 | 글래스 코팅막을 갖는 세라믹 칩 소자 및 그의 제조방법 |
JP3956851B2 (ja) * | 2003-01-21 | 2007-08-08 | 凸版印刷株式会社 | 受動素子内蔵基板及びその製造方法 |
KR100645643B1 (ko) * | 2004-07-14 | 2006-11-15 | 삼성전기주식회사 | 수동소자칩 내장형의 인쇄회로기판의 제조방법 |
CN100388447C (zh) * | 2004-12-20 | 2008-05-14 | 全懋精密科技股份有限公司 | 半导体构装的芯片埋入基板结构及制法 |
KR100858054B1 (ko) * | 2006-08-18 | 2008-09-10 | 대덕전자 주식회사 | 외층 삽입형 수동 부품 내장형 인쇄 회로 기판 제조 방법 |
WO2010095208A1 (ja) * | 2009-02-17 | 2010-08-26 | 株式会社 村田製作所 | 部品内蔵モジュール及びその製造方法 |
CN201717255U (zh) * | 2010-05-20 | 2011-01-19 | 深南电路有限公司 | 无源器件、无源器件埋入式电路板 |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1253469A (zh) * | 1998-11-02 | 2000-05-17 | 塞拉特赫株式会社 | 阵列型多芯片器件及其制造方法 |
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Owner name: SHENNAN CIRCUIT CO., LTD. Free format text: FORMER NAME: SHENZHEN SHENNAN CIRCUITS CO., LTD. |
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Address after: 518000 Nanshan District, Guangdong, overseas Chinese town, No. East Road, No. 99 Patentee after: SHENZHEN SHENNAN CIRCUIT CO., LTD. Address before: 518000 Nanshan District, Guangdong, overseas Chinese town, No. East Road, No. 99 Patentee before: Shenzhen Shennan Circuits Co., Ltd. |
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Owner name: WUXI TIANXIN NETWORK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHENNAN CIRCUIT CO., LTD. Effective date: 20150612 |
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Effective date of registration: 20150612 Address after: 214062 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park F District Service Building East Building Patentee after: Wuxi sky Interconnect Technology Co., Ltd. Address before: 518000 Nanshan District, Guangdong, overseas Chinese town, No. East Road, No. 99 Patentee before: SHENZHEN SHENNAN CIRCUIT CO., LTD. |
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Address after: 518000 No.3 huanping Road, Gaoqiao community, Pingdi street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Tianxin Internet Technology Co., Ltd Address before: 214062 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park F District Service Building East Building Patentee before: WUXI SKY CHIP INTERCONNECTION TECHNOLOGY Co.,Ltd. |
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