CN102244084B - 固态图像传感器的制造方法 - Google Patents

固态图像传感器的制造方法 Download PDF

Info

Publication number
CN102244084B
CN102244084B CN201110119054.6A CN201110119054A CN102244084B CN 102244084 B CN102244084 B CN 102244084B CN 201110119054 A CN201110119054 A CN 201110119054A CN 102244084 B CN102244084 B CN 102244084B
Authority
CN
China
Prior art keywords
ion implantation
semiconductor substrate
mask
resist pattern
pixels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110119054.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN102244084A (zh
Inventor
渡边高典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN102244084A publication Critical patent/CN102244084A/zh
Application granted granted Critical
Publication of CN102244084B publication Critical patent/CN102244084B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201110119054.6A 2010-05-14 2011-05-10 固态图像传感器的制造方法 Expired - Fee Related CN102244084B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010112667A JP5489855B2 (ja) 2010-05-14 2010-05-14 固体撮像装置の製造方法
JP2010-112667 2010-05-14

Publications (2)

Publication Number Publication Date
CN102244084A CN102244084A (zh) 2011-11-16
CN102244084B true CN102244084B (zh) 2014-02-05

Family

ID=44912140

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110119054.6A Expired - Fee Related CN102244084B (zh) 2010-05-14 2011-05-10 固态图像传感器的制造方法

Country Status (3)

Country Link
US (1) US8383497B2 (enExample)
JP (1) JP5489855B2 (enExample)
CN (1) CN102244084B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP6178975B2 (ja) * 2013-04-25 2017-08-16 パナソニックＩｐマネジメント株式会社 固体撮像装置
US20160071892A1 (en) * 2014-09-05 2016-03-10 Omnivision Technologies, Inc. Dopant configuration in image sensor pixels
JP6650668B2 (ja) * 2014-12-16 2020-02-19 キヤノン株式会社 固体撮像装置
US9391081B1 (en) 2015-09-08 2016-07-12 Sandisk Technologies Llc Metal indentation to increase inter-metal breakdown voltage
JP6915608B2 (ja) * 2016-03-29 2021-08-04 ソニーグループ株式会社 固体撮像装置、及び電子機器
JPWO2018034092A1 (ja) * 2016-08-18 2019-06-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
JP7576928B2 (ja) * 2020-05-08 2024-11-01 浜松ホトニクス株式会社 光検出装置、及び光センサの駆動方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
CN101414553A (zh) * 2007-09-27 2009-04-22 三洋电机株式会社 半导体晶片及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69312636T2 (de) 1992-11-09 1998-02-05 Canon Kk Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat
JP4216935B2 (ja) 1998-11-20 2009-01-28 富士フイルム株式会社 半導体装置の製造方法
US6969631B2 (en) * 2003-06-16 2005-11-29 Micron Technology, Inc. Method of forming photodiode with self-aligned implants for high quantum efficiency
JP2005327835A (ja) 2004-05-13 2005-11-24 Sony Corp 固体撮像装置および固体撮像装置の製造方法
JP4313789B2 (ja) * 2005-07-29 2009-08-12 富士通マイクロエレクトロニクス株式会社 半導体撮像装置およびその製造方法
KR100703987B1 (ko) 2006-05-17 2007-04-09 삼성전자주식회사 이미지 센서의 제조 방법 및 그에 의해 제조된 이미지 센서
JP5215589B2 (ja) 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
JP5538922B2 (ja) 2009-02-06 2014-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP5451098B2 (ja) 2009-02-06 2014-03-26 キヤノン株式会社 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
CN101414553A (zh) * 2007-09-27 2009-04-22 三洋电机株式会社 半导体晶片及其制造方法

Also Published As

Publication number Publication date
JP2011243665A (ja) 2011-12-01
US8383497B2 (en) 2013-02-26
US20110281392A1 (en) 2011-11-17
CN102244084A (zh) 2011-11-16
JP5489855B2 (ja) 2014-05-14

Similar Documents

Publication Publication Date Title
CN102244084B (zh) 固态图像传感器的制造方法
US8120062B2 (en) Complementary metal oxide semiconductor image sensor and method for fabricating the same
CN102263115B (zh) 固态图像传感器的制造方法
CN101471360B (zh) 图像传感器及其制造方法
US20080042229A1 (en) Image Sensor and Method for Manufacturing the Same
JP2011029461A5 (enExample)
KR102513483B1 (ko) 이미지 센서 및 그 제조방법
JP2012109540A (ja) 固体撮像装置の製造方法
CN102054771B (zh) Cmos图像传感器的制作方法
KR102386626B1 (ko) 고체 촬상 장치
KR20060120411A (ko) 고체촬상소자 및 그 제조방법
CN101533802B (zh) 互补金属氧化物半导体影像感测器及其制造方法
TW200534495A (en) Manufacturing method of photodiode
KR100282424B1 (ko) 수평전하 전송소자 및 그의 제조방법
CN102709300A (zh) Cmos图像传感器及其形成方法
KR100924045B1 (ko) 이미지 센서 및 그 제조 방법
CN101238583B (zh) 图像传感器像素及其制造方法
CN218730950U (zh) 图像传感器及图形化掩膜版
KR100645061B1 (ko) 이미지 센서 및 그 제조 방법
KR100301799B1 (ko) 고체촬상소자의제조방법
US7704845B2 (en) Varactor and method for manufacturing the same
JP2019117949A (ja) 固体撮像装置
CN101192572B (zh) 图像传感器制造方法
KR20090071023A (ko) 이미지 센서 및 그 제조방법
CN117855229A (zh) 图像传感器及其制作方法和图形化掩膜版

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140205