CN102213880B - 电光装置以及电子设备 - Google Patents
电光装置以及电子设备 Download PDFInfo
- Publication number
- CN102213880B CN102213880B CN201110083977.0A CN201110083977A CN102213880B CN 102213880 B CN102213880 B CN 102213880B CN 201110083977 A CN201110083977 A CN 201110083977A CN 102213880 B CN102213880 B CN 102213880B
- Authority
- CN
- China
- Prior art keywords
- electrode
- mentioned
- capacitive insulating
- electro
- optical device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims description 18
- 239000010410 layer Substances 0.000 description 89
- 239000010408 film Substances 0.000 description 77
- 238000003860 storage Methods 0.000 description 36
- 239000004973 liquid crystal related substance Substances 0.000 description 25
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 206010047571 Visual impairment Diseases 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP086764/2010 | 2010-04-05 | ||
| JP2010086764A JP5423548B2 (ja) | 2010-04-05 | 2010-04-05 | 電気光学装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102213880A CN102213880A (zh) | 2011-10-12 |
| CN102213880B true CN102213880B (zh) | 2015-09-02 |
Family
ID=44709288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110083977.0A Expired - Fee Related CN102213880B (zh) | 2010-04-05 | 2011-04-02 | 电光装置以及电子设备 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8570452B2 (enExample) |
| JP (1) | JP5423548B2 (enExample) |
| CN (1) | CN102213880B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201539095A (zh) | 2014-04-01 | 2015-10-16 | Seiko Epson Corp | 光電裝置及電子機器 |
| JP2015197582A (ja) * | 2014-04-01 | 2015-11-09 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
| JP6432222B2 (ja) | 2014-09-03 | 2018-12-05 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置および電子機器 |
| CN104576656A (zh) * | 2014-12-23 | 2015-04-29 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
| JP2016218382A (ja) | 2015-05-26 | 2016-12-22 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
| JP2017072741A (ja) | 2015-10-08 | 2017-04-13 | セイコーエプソン株式会社 | 電気光学装置、電子機器、電気光学装置の製造方法 |
| CN113270464A (zh) | 2016-09-07 | 2021-08-17 | 索尼半导体解决方案公司 | 显示装置 |
| KR102739329B1 (ko) | 2016-09-26 | 2024-12-05 | 가부시끼가이샤 레조낙 | 수지 조성물, 반도체용 배선층 적층체 및 반도체 장치 |
| WO2018198710A1 (ja) * | 2017-04-27 | 2018-11-01 | ソニー株式会社 | 液晶表示パネルおよび電子機器 |
| US10497519B1 (en) | 2018-09-27 | 2019-12-03 | International Business Machines Corporation | Back-end-of-the line capacitor |
| JP7207168B2 (ja) * | 2019-05-28 | 2023-01-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0244317A (ja) * | 1988-08-05 | 1990-02-14 | Hitachi Ltd | 補助容量を有する液晶表示装置 |
| CN1314608A (zh) * | 2000-03-17 | 2001-09-26 | 精工爱普生株式会社 | 电光学装置 |
| JP2004191930A (ja) * | 2002-11-26 | 2004-07-08 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
| US6955953B2 (en) * | 1999-01-29 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having thin film transistor and capacitor |
| CN101382708A (zh) * | 2007-09-04 | 2009-03-11 | 株式会社日立显示器 | 液晶显示装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4514871B2 (ja) * | 1999-01-29 | 2010-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
| JP3501125B2 (ja) * | 2000-03-17 | 2004-03-02 | セイコーエプソン株式会社 | 電気光学装置 |
| JP4211644B2 (ja) * | 2004-03-15 | 2009-01-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| JP5079462B2 (ja) * | 2007-11-19 | 2012-11-21 | 株式会社ジャパンディスプレイウェスト | 液晶装置および電子機器 |
| JP5217752B2 (ja) | 2008-08-05 | 2013-06-19 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
-
2010
- 2010-04-05 JP JP2010086764A patent/JP5423548B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-02 CN CN201110083977.0A patent/CN102213880B/zh not_active Expired - Fee Related
- 2011-04-04 US US13/079,203 patent/US8570452B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0244317A (ja) * | 1988-08-05 | 1990-02-14 | Hitachi Ltd | 補助容量を有する液晶表示装置 |
| US6955953B2 (en) * | 1999-01-29 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having thin film transistor and capacitor |
| CN1314608A (zh) * | 2000-03-17 | 2001-09-26 | 精工爱普生株式会社 | 电光学装置 |
| JP2004191930A (ja) * | 2002-11-26 | 2004-07-08 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
| CN101382708A (zh) * | 2007-09-04 | 2009-03-11 | 株式会社日立显示器 | 液晶显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8570452B2 (en) | 2013-10-29 |
| JP5423548B2 (ja) | 2014-02-19 |
| US20110242470A1 (en) | 2011-10-06 |
| JP2011221071A (ja) | 2011-11-04 |
| CN102213880A (zh) | 2011-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150902 Termination date: 20210402 |
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| CF01 | Termination of patent right due to non-payment of annual fee |