CN102208362B - 一种穿透硅通孔背部连接端的制备方法 - Google Patents
一种穿透硅通孔背部连接端的制备方法 Download PDFInfo
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- CN102208362B CN102208362B CN 201110113880 CN201110113880A CN102208362B CN 102208362 B CN102208362 B CN 102208362B CN 201110113880 CN201110113880 CN 201110113880 CN 201110113880 A CN201110113880 A CN 201110113880A CN 102208362 B CN102208362 B CN 102208362B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 92
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- 238000005530 etching Methods 0.000 claims abstract description 11
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- 230000001568 sexual effect Effects 0.000 claims description 6
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CN 201110113880 CN102208362B (zh) | 2011-05-04 | 2011-05-04 | 一种穿透硅通孔背部连接端的制备方法 |
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CN103219282B (zh) * | 2013-05-03 | 2015-07-08 | 华进半导体封装先导技术研发中心有限公司 | 一种tsv露头工艺 |
CN103390580A (zh) * | 2013-08-20 | 2013-11-13 | 华进半导体封装先导技术研发中心有限公司 | 一种tsv背面露头方法 |
CN105590893A (zh) * | 2014-10-20 | 2016-05-18 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法、电子装置 |
CN114556594A (zh) * | 2020-09-27 | 2022-05-27 | 深圳市大疆创新科技有限公司 | 芯片及制备方法、接收芯片、测距装置、可移动平台 |
CN112908933A (zh) * | 2021-02-20 | 2021-06-04 | 上海华虹宏力半导体制造有限公司 | 硅通孔的制造方法 |
CN115565934A (zh) | 2021-07-01 | 2023-01-03 | 长鑫存储技术有限公司 | 一种半导体器件及其制作方法 |
CN113782489A (zh) * | 2021-08-27 | 2021-12-10 | 上海华虹宏力半导体制造有限公司 | 硅通孔及其形成方法 |
Citations (3)
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CN101179037A (zh) * | 2007-12-06 | 2008-05-14 | 清华大学 | 高深宽比三维垂直互连及三维集成电路的实现方法 |
CN101483150A (zh) * | 2009-02-13 | 2009-07-15 | 华中科技大学 | 一种加工硅通孔互连结构的工艺方法 |
CN101604683A (zh) * | 2008-06-11 | 2009-12-16 | 和舰科技(苏州)有限公司 | 一种用于互连的气隙结构及其制造方法 |
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JP2001185685A (ja) * | 1999-12-24 | 2001-07-06 | Toshiba Corp | 半導体装置 |
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CN101179037A (zh) * | 2007-12-06 | 2008-05-14 | 清华大学 | 高深宽比三维垂直互连及三维集成电路的实现方法 |
CN101604683A (zh) * | 2008-06-11 | 2009-12-16 | 和舰科技(苏州)有限公司 | 一种用于互连的气隙结构及其制造方法 |
CN101483150A (zh) * | 2009-02-13 | 2009-07-15 | 华中科技大学 | 一种加工硅通孔互连结构的工艺方法 |
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