CN102171016B - 用于制造速度传感元件的方法 - Google Patents
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Abstract
本发明涉及一种用于制造传感元件的方法,其中传感元件的至少一部分在制造期间经历至少一个等离子处理过程(B、E、I)。
Description
技术领域
本发明涉及一种用于制造传感元件的方法、一种传感元件以及该传感元件在机动车中的应用。
背景技术
出版文献WO 95/17680提出了一种具有引线框架的车轮转速传感元件,所述引线框架在两侧都设有部件且具有壳体,所述壳体具有布置在引线框架一侧的探针元件和电子电路,及布置在引线框架另一侧的磁体。
出版文献WO 97/36729提出了一种用于制造车轮转速传感元件的方法,所述车轮转速传感元件包括第一壳体部件,该第一壳体部件具有带有集成的易熔部件的定位元件,其中在注塑过程中,该第一壳体部件被第二壳体部件包围。
发明内容
本发明的目的在于,提出一种用于制造传感元件的方法,该方法可成本低地实施和/或实现传感元件的高制造质量。
根据本发明,该目的通过根据权利要求1的方法来实现。
本发明的基本构思在于,使传感元件的至少一部分在制造期间经历至少一个等离子处理过程。
可使用各种不同的方法产生用于等离子处理的等离子体,例如将高频交流电压施加在气体上或者为此使用直流电流和/或利用微波激发气体。用于等离子处理的示例性的气体混合物包含氧、氩、氢和/或氮。混合物的种类取决于等离子处理工艺的具体要求,该要求例如源于杂质的种类和被处理的材料。根据气体混合物的种类,等离子体起到氧化或还原或活化的作用。氧化等离子体适于去除有机杂质,而还原等离子体适于去除无机沉积物和/或分解氧化沉积物。
等离子处理过程优选地包括等离子清洁过程和/或等离子活化过程。
等离子清洁过程优选地理解为干燥、无接触的、化学的和/或物理的、无磨蚀的清洁工艺,通过该工艺可得到非常高的清洁质量。有机杂质尤其通过与等离子体的自由基的化学反应转化为例如水蒸气、二氧化碳和/或CH4。为了化学地去除污物,等离子体含有例如氧或氢或氩。在此,氧适于去除有机污物,而氢适于去除无机和/或有机物质以及还原氧化物。有利地,清洁过程是物理和化学作用过程的组合,或者优选地仅仅是化学作用过程(无离子)。
物理的:如果将待清洁的物体例如与用于产生等离子体的阴极连接,则由于所施加的电场,来自等离子体的正离子沿等离子体的方向被加速。在碰撞时,由于直接的动量传递,这些离子使原子和分子从表面脱离。
化学的:例如,被激发的氧和氧离子在与碳氢化合物反应时形成二氧化碳和水。例如,被激发的氢形成卤化物、硫化物、CHX和水蒸气。
等离子活化过程优选地理解为用于增大待处理或待活化的物体的表面张力或附着力的等离子处理过程。在此,基材或物体与待涂覆的材料如模制材料之间的附着力被增强。基材或该物体因此能更容易被尤其是流体、介质或物质润湿或附着地包裹。这里,物体上液滴的接触角对于物体的表面张力来说是常用的度量。如果物体的表面是憎水的(不吸水的),则其表面张力小。借助于等离子活化过程,如利用附着力增强剂那样实现了表面张力的增大。在等离子活化过程之后,物体的表面变得亲水或容易被润湿,接触角减小,并且分层的倾向更小。例如,氮和/或氧被用于等离子活化过程。例如,等离子活化过程用于改善粘合剂或涂层在特定塑料上的附着力。
传感元件的基底元件和/或载体元件优选地在装配过程之前和/或在与电连接件的接触连接过程之前经历等离子处理过程,尤其是等离子清洁过程。
基底元件优选地理解为引线框架和/或传感元件的结构元件和/或载体条/载体膜或MID元件(模制互连装置或注塑模制的电路载体),所述MID元件具有塑料体部或注塑体部,所述塑料体部或注塑体部具有施加在其上的和/或被其包封的印制导线,所述印制导线例如由金属和/或有导电能力的塑料制成。
优选地,在至少一个模制封装过程之前,尤其在注塑过程之前,使传感元件的至少一部分经历等离子处理过程,尤其是等离子活化过程。尤其优选地,这在至少一个装配过程之后进行。
该方法有利地包括接触连接过程之前的等离子清洁过程以用于显著减小易受腐蚀性,以及包括模制封装过程之前的等离子活化过程以用于显著减小易分层性。
传感元件优选地具有至少一个探针元件和/或至少一个电子电路,它们尤其直接地或间接地布置在基底元件或载体元件上,尤其优选地布置在基底元件的载体底座上或者接合岛或芯片(管芯)垫盘上。更尤其优选地,探针元件和/或电子电路按照焊球-针脚-焊球(ball-stitch-on-ball)键合方法(BSOB)或针脚-凸点(stitch-on-bump)键合方法(SOB)被电接触连接,由此可实现电接触连接的高抗拉强度和高剪切强度。或者,更尤其优选地,探针元件和/或电子电路按照楔形-球形键合方法或按照反向针脚-焊球(reverse-stitch-on-ball)键合方法(RSOB)被电接触连接。
探针元件优选地理解为磁电转换元件,尤其是AMR、GMR或其它磁阻元件或霍尔元件,其尤其优选地具有桥式结构并且也称为桥式芯片。探针元件有利地具有组合的、工作方式不同的磁电转换元件。
基底元件和/或载体元件优选地在两侧都分别具有至少一个构件。
探针元件与基底元件和/或载体元件的至少一部分优选地被模制封装,由此形成第一壳体。此外,基底元件和/或载体元件的至少一部分与尤其是电子保护元件被模制封装,由此形成第二壳体。在此,尤其优选地,第一和第二壳体彼此之间有确定的间距。更尤其优选地,第一和第二壳体在另外的模制封装过程中被共同地模制封装,例如借助于包覆成型(overmold)-注塑过程,由此形成共同的第三壳体。
包覆成型-注塑过程优选地理解为这样一种注塑过程,其中尤其借助于螺杆传动装置将热塑性塑料压入外模、例如用户专用的外模中。尤其优选地,通过挤出机螺杆将粘性的模塑材料如聚酰胺压入注塑模具或模具型腔中,随后,热塑性塑料材料通过冷却固化在注塑模具的壁上。然后从模具移除完成的注塑模制构件。
优选地,尤其在制造过程结束时,使传感元件经历额外的等离子处理过程,尤其是等离子清洁过程,由此传感元件的暴露的触点或连接件较小程度地腐蚀或具有较小程度的腐蚀倾向。此外,由于等离子清洁过程,可免除用于保护暴露的触点或连接件的电镀过程,如镀锡或镀镍。随后,有利地直接密封地包装传感元件。
用于制造传感元件的方法优选地包括以下步骤:
由坯体冲裁出基底元件或引线框架或载体条,该坯体尤其由金属板形成。或者,使用载体条/载体膜或MID元件作为基底元件。接着在引线框架或基底元件的至少一侧上涂覆表面涂层和/或至少一个接触位置。然后为引线框架或基底元件装配至少一个电子构件。
在装配基底元件时,优选地,首先在基底元件的第一侧或第一面上设置第一粘合剂(分配)。可选地,该第一粘合剂是可导电或绝缘的,而且具有较好的导热性。然后,将至少一个电子电路(也称为ASIC芯片)和/或尤其优选地设计为桥的至少一个探针元件安装在该第一侧上。该ASIC芯片更尤其优选地用作探针元件的安装载体。在此,例如借助于倒装安装将探针元件布置在ASIC芯片上。
ASIC芯片和探针元件有利地设计为集成的构件。
此后,优选地加热基底元件的第一侧上的粘合剂或引线框架或基底元件以及构件,由此借助于第一粘合剂使连接固化。
然后,引线框架或基底元件有利地经历等离子处理过程,尤其是等离子清洁过程,由此至少部分地清除基底元件和构件的表面上的促进腐蚀的硫化物、卤素和/或碳污物。此外,氧化层被还原。这样尤其有利地保证了键合引线(bonding wire)与引线框架或基底元件之间的可靠电接触连接,和/或与ASIC芯片或探针元件的至少一个接触位置的可靠电接触连接。此外,该清洁用于在引线框架或基底元件被至少部分地注塑封装时实现较高的不可透过性(密封性)。
在装配引线框架或基底元件的过程或相应的装配过程之后,尤其在随后的等离子处理过程之后,优选地,至少ASIC芯片和/或探针元件借助于引线键合过程彼此导电连接和/或与引线框架或基底元件导电连接。在此,尤其优选地,首先以适当的方式在基底元件上和相应构件的接触连接垫盘上或接触连接件上的所有接触位置处布置凸块或键合凸块或钎焊凸点或可键合层。然后,牵拉各个键合引线,这根据所谓的BSOB键合方法或SOB键合方法进行。更尤其优选地,与ASIC芯片接触连接的键合引线从ASIC芯片的接触连接垫盘被拉向各个目标点及那里的电连接凸块。通过这种类型的键合过程,构件的不期望的热影响和机械影响被保持得较小。或者,探针元件和/或电子电路的电接触连接更尤其优选地按照楔形-球形键合方法或RSOB键合方法进行。
有利地,在接触连接过程中实施上述键合方法中的至少一种,尤其是多种,以用于与不同的电触点接触。尤其优选地,电子构件借助于SOB键合方法进行接触连接,而基底元件或引线框架借助于楔形-球形键合方法或其它楔形键合方法进行接触连接。或者,优选地,所有电接触连接都借助于SOB或BSOB键合方法进行。
ASIC芯片的接触连接垫盘有利地至少部分地由铝形成,和/或探针元件的接触连接垫盘由金形成。ASIC芯片的由铝形成的接触连接垫盘尤其设计为厚度小于1μm的金属喷镀物。
优选地,金丝被用作键合引线,其具有作为添加物的钯或掺杂了少量的钯。
上述接触连接实现了高的热负荷能力,尤其对于例如用于机动车中时的温度高达180℃的情况,以及实现了高的抗拉强度和剪切强度。
随后,有利地,在引线框架或基底元件的与第一侧相对的第二侧上涂覆第二粘合剂。然后,在第二侧上在与所述桥相对的区域内如此布置磁性件、尤其是铁氧体,使得尤其优选地,磁体的重心相对于基底元件垂直地位于探针元件的感应面的重心和/或几何中心的上方。更尤其优选地,电子保护元件还与ASIC芯片离开确定的间距、可选地布置在基底元件的第一侧或第二侧上。该保护元件有利地安装在与ASIC芯片相同的接合岛上或者优选地与ASIC芯片离开确定间距地安装在基底元件的另一位置,同时该保护元件尤其与基底元件的两个接触连接腿机械和电连接。后者的优点在于,改善了连接销相对于模制壳体的机械稳定性。同时,该保护元件有利地被第二壳体包围。
第二粘合剂优选地可导电。
优选地,点状地或作为交叉线地如此分配第一和第二粘合剂,使得在装配过程或“芯片安装”之后,各构件的角部被粘合剂充分地覆盖。
电子保护元件优选地设计为电容器或优选地设计为双齐纳二极管或变阻器。通过粘合连接或引线键合技术进行电接触连接。
然后,有利地,同样通过加热使第二粘合剂固化。
该加热尤其有利地分别在炉子中进行。
在完全装配好引线框架或基底元件后,在尤其执行为传递模塑成型(transfer molding)的模制封装过程之前不久,有利地进行额外的等离子处理过程。该额外的等离子处理过程尤其优选地包括等离子清洁过程和其后的等离子活化过程。在此,等离子活化过程更尤其优选地涉及ASIC芯片、粘合的和铁氧体的表面,由此实现了模塑材料或注塑材料的附着力的改善。
传递模塑成型优选地理解为这样一种注塑过程,其中固体的和/或预混合的模塑材料在增大的压力和增高的温度下液化,随后尤其在增大的压力下被导入注塑模中,模塑材料在该注塑模中凝固或结晶为热固性塑料体,其中该热固性塑料体基本上不可再熔化。
有利地,ASIC芯片、探针元件及磁性件被共同地模制封装,由此形成围绕这些构件的第一壳体。此外,尤其优选地,单独地模制封装电子保护元件,由此形成额外的第二壳体。传递模塑成型优选地被用作模制封装技术。
传感元件的基底元件优选地通过基本上形式为链或条的连接片与其它传感元件的基底元件连接。在模制封装过程之后,基底元件尤其通过冲压过程被切割。
有利地,基底元件具有至少一个接合岛/载体底座/芯片垫盘,在其上,ASIC芯片和探针元件布置在第一侧而磁性件布置在第二侧。此外,基底元件具有至少两个与接合岛部分地连接的触点接头。
在模制封装且尤其在基底元件或引线框架的切割之后,优选地,磁性件被磁化。然后,尤其优选地,引线框架与插头端子或电缆通过压接(crimping)和/或熔焊和/或钎焊和/或粘合导电连接,同时更尤其优选地,接触连接端子与插头或电缆连接。
ASIC芯片与探针元件或桥式芯片优选地具有基本上相同的高度,且因此从基底元件的第一侧基本上突出相同的距离。同时,ASIC芯片和桥式芯片在基底元件的第一侧上布置为彼此间隔确定的长度。已发现,这种布置有利于共同的模制封装。ASIC芯片和桥式芯片之间的确定长度或这种间隔尤其优选地大于40μm,从而能够没有问题地进行这些构件的粘合过程以及随后的共同的模制封装过程。
基底元件或引线框架优选地包括两个或更多个尤其通过第二壳体彼此连接的接触连接腿,所述接触连接腿尤其优选地作为传感元件的接触元件从传感元件的共同的第三壳体部分地突出。
本发明还涉及按根据本发明的制造方法制造的传感元件。
此外,本发明还涉及传感元件在机动车中的应用,尤其作为速度传感元件,尤其优选地作为车轮转速传感元件的应用。
根据本发明的方法优选地用于制造传感元件,尤其用于制造适于安全性关键的应用的传感元件。该方法尤其优选地用于制造速度传感元件,更尤其优选地制造用于机动车的速度传感元件。
附图说明
从属权利要求和下面参照附图对实施例的描述给出了其它优选的实施方式。
附图示意性地示出:
图1至3示出传感元件的实施例,以及
图4示出用于制造传感元件的方法的示例性流程图。
具体实施方式
图1示出示例性的传感元件,其中图1a)示出基底元件1的第一侧的俯视图,图1b)示出侧视图以及图1c)示出基底元件1的第二侧或底侧的俯视图。根据示例,基底元件1被设计为由金属制成的引线框架。
基底元件1的第一侧装配有探针元件3和ASIC芯片2,所述探针元件3和ASIC芯片2通过电连接件或“键合引线”彼此连接以及与基底元件1的接触连接腿9连接。探针元件3和ASIC芯片2从基底元件1突出基本相同的长度,或设计为相同的高度。根据本例,布线或电接触连接按照BSOB键合方法进行,其中金丝5与键合凸块或凸块或金凸点连接,所述键合凸块或凸块或金凸点布置在基底元件1的接触连接腿9上以及探针元件3和ASIC芯片2的接触连接垫盘10上。在图1所示的实施例中,所示出的传感元件相对于其基底元件借助于带11或其它的连接件与其它基底元件连接。探针元件3和ASIC芯片2布置在基底元件1的载体底座12上。
载体底座12或接合岛在基底元件1的第二侧装配有磁性件4,该磁性件4设计为铁氧体。此外,基底元件1的第二侧装配有根据本例设计为电容器元件的电子保护元件6,所述电子保护元件6布置为距载体底座12或ASIC芯片2确定的距离,且与两个接触连接腿9连接。
图2示出具有第一和第二壳体7、8的传感元件的实施例,所述壳体在注塑工艺中由热固性模塑料如环氧物形成。在图2a)中,传感元件仍相对于其基底元件1借助于带11与其它传感元件连接。在此,基底元件1具有两个接触连接腿9和一载体底座,其中该载体底座由所述第一壳体7包封。图2b)示出切割过程之后的示例性的传感元件,在切割过程中,仅基底元件1的对稍后完成的传感元件很重要的部分被冲裁并被进一步处理。图2c)示出根据本例的传感元件的侧剖视图。在此,由注塑环氧物制成的第一壳体7包含ASIC芯片2和探针元件3以及磁性件4或根据本例的铁氧体,其中ASIC芯片2和探针元件3布置在基底元件1的载体底座12的第一侧,而磁性件4或根据本例的铁氧体布置在该载体底座12的第二侧。由注塑环氧物制成的第二壳体8包括作为电子保护元件6的电容器元件,该电子保护元件6与两个接触连接腿9连接。
图3示出示例性的传感元件,其具有带接触连接腿9的基底元件1及由注塑材料形成的第一壳体7和第二壳体8。第一壳体7包括未示出的探针元件、ASIC芯片以及磁性件。第二壳体8示例性地包括电子保护元件或者在替换实施例中为“空”,即仅由基底元件的封装模制部分和注塑模料本身组成。在此,该第二壳体8还用于消除机械负荷,尤其是相对于接触连接腿9消除应变。
图4示出用于制造传感元件的示例性方法的流程图。
其中,在方法步骤A“装配第一侧”中装配基底元件或引线框架的第一侧。在该方法步骤A中,将电绝缘且导热性相对较好的第一粘合剂施加在基底元件的第一侧的一部分上,根据本例施加在载体底座的第一侧上,这也称为“粘合剂分配”。然后,将ASIC芯片和探针元件布置或粘合在该第一侧上,这也可称为“芯片安装”。随后,使第一粘合剂在炉子中硬化,即“固化”。
接着,在方法步骤B中进行等离子清洁过程,即“等离子清洁”。这是为电接触连接工艺做准备。
然后,进行被布置在基底元件的第一侧上的构件或探针元件和ASIC芯片的接触连接过程C,即“引线键合”,根据本例该接触连接过程利用金丝按照BSOB键合方法进行。
接着,进行基底元件的第二侧的装配过程D,即“装配第二侧”。其中,示例性地用导电的第二粘合剂润湿基底元件的第二侧的一部分,即“粘合剂分配”,然后将用于改善传感元件的电磁兼容性的磁性件和电子保护元件彼此间隔地布置在第二侧上。随后,使第二粘合剂在炉子中硬化,即“固化”。
在装配过程之后,进行等离子活化过程E,即“等离子活化”,或者使传感元件经历该等离子活化过程。
接着,在注塑过程F即“传递模塑成型”中形成第一和第二壳体,所述第一和第二壳体包含之前布置在基底元件上的构件。使壳体的注塑材料在炉子中硬化,即“模后固化”。
此后,进行磁性件的磁化过程G,然后进行传感元件的电性测试方法H,即“电性测试”,其中检验探针元件与磁性件共同作用的工作性能以及ASIC芯片的工作性能。
接着,使传感元件经历等离子清洁过程I,即“等离子清洁”,该过程减小了传感元件或传感元件的暴露的电触点的易受腐蚀性。由此,不需要额外的电镀过程,例如为暴露的电触点镀锡或镀镍。
或者,完全不对传感元件进行任何额外的处理来抗腐蚀,而是例如借助于密封地包装或借助于密封的袋子对传感元件进行合适的封装。
Claims (12)
1.用于制造传感元件的方法,其特征在于,所述传感元件的至少一部分在制造期间经历等离子处理过程(B、E、I);其中,
在与电连接件(5)的接触连接过程(C)之前,所述传感元件的基底元件(1)和/或载体元件经历等离子清洁过程(B、I);
接着,进行基底元件的第二侧的装配过程;并且其中,
在完全装配好引线框架或基底元件后,在模制封装过程之前不久,进行额外的等离子处理过程,且该额外的等离子处理过程包括等离子清洁过程和其后的等离子活化过程。
2.根据权利要求1所述的方法,其特征在于,所述等离子处理过程包括等离子清洁过程(B、I)和/或等离子活化过程(E)。
3.根据权利要求1或2所述的方法,其特征在于,所述至少一个模制封装过程(F)是注塑过程。
4.根据权利要求1或2所述的方法,其特征在于,所述传感元件装配有至少一个探针元件(3)和/或至少一个电子电路(2),所述探针元件(3)和/或所述电子电路(2)直接地或间接地布置在所述基底元件(1)和/或所述载体元件上。
5.根据权利要求4所述的方法,其特征在于,所述探针元件(3)和/或所述电子电路(2)按照焊球-针脚-焊球键合方法被电接触连接(C)。
6.根据权利要求1或2所述的方法,其特征在于,所述基底元件(1)和/或所述载体元件在两侧分别装配有至少一个构件(2、3、4、6)。
7.根据权利要求4所述的方法,其特征在于,至少所述探针元件(3)与所述基底元件(1、12)和/或所述载体元件的至少一部分被模制封装(F),由此形成第一壳体(7);以及所述基底元件(1)和/或所述载体元件的至少一部分与电子保护元件(6)被模制封装(F),由此形成第二壳体(8),所述第二壳体(8)距所述第一壳体(7)确定的距离。
8.根据权利要求7所述的方法,其特征在于,所述第一壳体(7)和所述第二壳体(8)在另外的模制封装过程中被共同地模制封装,由此形成共同的第三壳体。
9.根据权利要求1或2所述的方法,其特征在于,在所述制造方法结束时,所述传感元件经历额外的等离子处理过程(I)。
10.传感元件,其按根据权利要求1至9中任一项所述的制造方法来制造。
11.根据权利要求10所述的传感元件,其特征在于,该传感元件被设计为速度传感元件。
12.根据权利要求10或11所述的传感元件在机动车中的应用。
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DE102008064046A DE102008064046A1 (de) | 2008-10-02 | 2008-12-19 | Verfahren zur Herstellung eines Geschwindigkeits-Sensorelementes |
DE102008064046.8 | 2008-12-19 | ||
PCT/EP2009/062749 WO2010037810A1 (de) | 2008-10-02 | 2009-10-01 | Verfahren zur herstellung eines geschwindigkeits-sensorelements |
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EP (1) | EP2349672B1 (zh) |
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Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100188078A1 (en) * | 2009-01-28 | 2010-07-29 | Andrea Foletto | Magnetic sensor with concentrator for increased sensing range |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9661775B2 (en) | 2012-07-30 | 2017-05-23 | Continental Teves Ag & Co. Ohg | Wiring device for wiring an electronic apparatus |
DE102012224075A1 (de) | 2012-12-20 | 2014-06-26 | Continental Teves Ag & Co. Ohg | Sensor zum Erfassen einer Position eines Geberelements |
DE102013217892A1 (de) * | 2012-12-20 | 2014-06-26 | Continental Teves Ag & Co. Ohg | Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US20140377915A1 (en) * | 2013-06-20 | 2014-12-25 | Infineon Technologies Ag | Pre-mold for a magnet semiconductor assembly group and method of producing the same |
DE102013224466A1 (de) | 2013-11-28 | 2015-05-28 | Continental Teves Ag & Co. Ohg | Werkzeug zum Urformen eines Gehäuses für einen Sensor |
DE102014208429A1 (de) | 2013-11-28 | 2015-05-28 | Continental Teves Ag & Co. Ohg | Sensorherstellung durch Halten des Zwischenspritzlings |
DE102013226045A1 (de) | 2013-12-16 | 2015-06-18 | Continental Teves Ag & Co. Ohg | Mechanisch überbestimmt verbauter Drehzahlsensor mit elastischer Umspritzung |
CN103700597A (zh) * | 2013-12-27 | 2014-04-02 | 苏州市奥普斯等离子体科技有限公司 | 模塑互联器件的制备方法 |
DE102014202182A1 (de) * | 2014-02-06 | 2015-08-06 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Sensoreinheit für ein Fahrzeug und Sensoreinheit für ein Fahrzeug |
DE102014207762A1 (de) | 2014-04-24 | 2015-10-29 | Continental Teves Ag & Co. Ohg | Für asynchrone und synchrone Datenübertragung universell einsetzbare PSI5-Schnittstelle |
US10151195B2 (en) * | 2014-04-29 | 2018-12-11 | China Petroleum & Chemical Corporation | Electronic devices for high temperature drilling operations |
DE102014208432A1 (de) | 2014-05-06 | 2015-11-12 | Continental Teves Ag & Co. Ohg | PSI5-Schnittstelle mit temperaturunabhängiger Fehlerüberwachung |
DE102014210523A1 (de) | 2014-06-03 | 2015-12-03 | Continental Teves Ag & Co. Ohg | Spannungsarmes Verkleben von Sensorchips |
DE102014213217A1 (de) | 2014-07-08 | 2016-01-14 | Continental Teves Ag & Co. Ohg | Körperschallentkopplung an mit Geberfeldern arbeitenden Sensoren |
DE102014213218A1 (de) | 2014-07-08 | 2016-02-18 | Continental Teves Ag & Co. Ohg | Sensor mit Opferanode |
DE102014213231A1 (de) | 2014-07-08 | 2016-01-14 | Continental Automotive Gmbh | Sensorunterseitig verschaltete passive Bauelemente |
DE102014213591A1 (de) | 2014-07-11 | 2016-01-14 | Continental Teves Ag & Co. Ohg | Neutralteil für einen kundenspezifisch adaptierbaren Sensor |
DE102014213588A1 (de) | 2014-07-11 | 2016-02-18 | Continental Teves Ag & Co. Ohg | Kundenspezifischer Sensor hergestellt durch Dreifach-Molden |
WO2016005608A1 (de) | 2014-07-11 | 2016-01-14 | Continental Teves Ag & Co. Ohg | Neutralteil für einen kundenspezifisch adaptierbaren sensor |
DE102014218711A1 (de) | 2014-09-17 | 2016-03-17 | Continental Teves Ag & Co. Ohg | Feuchtigkeitserfassung innerhalb eines Sensors |
DE102014219382A1 (de) * | 2014-09-25 | 2016-03-31 | Continental Teves Ag & Co. Ohg | Sensorkalibrierung in einer Parkanlage |
US10317526B2 (en) | 2014-09-25 | 2019-06-11 | Continental Teves Ag & Co. Ohg | Localization of charging coils, which is integrated in distance sensors |
DE102014219610A1 (de) | 2014-09-26 | 2016-03-31 | Continental Teves Ag & Co. Ohg | Kundenspezifische Sensordatenübertragung mit Standardsensor |
CN107209033B (zh) | 2015-01-28 | 2019-11-12 | 大陆-特韦斯股份有限公司 | 具有对称掩埋的传感器元件的传感器 |
KR20170108023A (ko) | 2015-01-28 | 2017-09-26 | 콘티넨탈 테베스 아게 운트 코. 오하게 | 센서용 매립형 필터 컴포넌트들을 갖는 어댑터 |
DE102015008953B4 (de) | 2015-07-10 | 2021-10-07 | Audi Ag | Verfahren zum Vorbehandeln thermoplastischer Bauteile zum Strukturkleben - und Vorrichtung zum Bearbeiten einer Oberfläche |
US9958292B1 (en) | 2016-10-25 | 2018-05-01 | Nxp B.V. | Sensor package with double-sided capacitor attach on same leads and method of fabrication |
NL2017885B1 (en) * | 2016-11-29 | 2018-06-11 | Sencio B V | Sensor package and method of manufacturing the same |
JP7028067B2 (ja) * | 2018-05-31 | 2022-03-02 | 日立金属株式会社 | 磁気検出センサ、回転検出センサ及びセンサ付きケーブル |
US10830656B2 (en) * | 2018-06-01 | 2020-11-10 | Sensata Technologies, Inc. | Overmolded lead frame assembly for pressure sensing applications |
US10921391B2 (en) | 2018-08-06 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor with spacer |
EP3687758B1 (en) * | 2018-11-16 | 2023-07-12 | Hewlett-Packard Development Company, L.P. | Two-step molding for a lead frame |
US20200225067A1 (en) * | 2019-01-15 | 2020-07-16 | Nxp B.V. | Sensor package, sensor assembly, and method of fabrication |
DE102019210373A1 (de) * | 2019-07-12 | 2021-01-14 | Continental Teves Ag & Co. Ohg | Sensor mit dichter Umspritzung und einem freigestellten Bereich |
US10991644B2 (en) * | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
CN114516141A (zh) | 2020-11-19 | 2022-05-20 | 罗伯特·博世有限公司 | 用于制造插头的方法和注塑模具 |
KR20240046800A (ko) * | 2021-08-31 | 2024-04-09 | 매직 립, 인코포레이티드 | 머리 장착식 디스플레이 디바이스들용 일체형 광학 컴포넌트들 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1215363A (zh) * | 1996-03-29 | 1999-04-28 | Itt制造企业公司 | 塑料探测器及其制造方法 |
WO2007123310A1 (en) * | 2006-04-21 | 2007-11-01 | Seoul Semiconductor Co., Ltd. | Method of fabricating light emitting diode package with surface treated resin encapsulant and the package fabricated by the method |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5006797A (en) | 1989-03-02 | 1991-04-09 | Smith William L | Electromagnetic sensor assembly |
DE4111568A1 (de) * | 1991-04-10 | 1992-10-15 | Adolf Wuensch | Verfahren und vorrichtung zur herstellung von metallteile aufweisenden kunststoffkoerpern |
US5542171A (en) * | 1991-10-04 | 1996-08-06 | Motorola, Inc. | Method of selectively releasing plastic molding material from a surface |
US5998989A (en) | 1993-12-22 | 1999-12-07 | Itt Automotive Europe Gmbh | Device including magnet-biased magnetoresistive sensor and rotatable, magnetized encoder for detecting rotary movements |
US5440153A (en) * | 1994-04-01 | 1995-08-08 | United Technologies Corporation | Array architecture with enhanced routing for linear asics |
US5429735A (en) * | 1994-06-27 | 1995-07-04 | Miles Inc. | Method of making and amperometric electrodes |
US5909633A (en) * | 1996-11-29 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing an electronic component |
US5953108A (en) * | 1997-05-28 | 1999-09-14 | Laser Alignment, Inc. | Laser beam projector power and communication system |
JP2000108205A (ja) | 1998-10-06 | 2000-04-18 | Polyplastics Co | プラスチック複合成形品及びその製造方法 |
JP4138122B2 (ja) | 1999-01-12 | 2008-08-20 | 株式会社ホンダロック | センサ装置 |
JP3866531B2 (ja) * | 2001-06-01 | 2007-01-10 | 株式会社ホンダロック | センサ装置 |
US6759594B2 (en) * | 2001-08-16 | 2004-07-06 | Nissin Kogyo Co., Ltd. | Wheel speed sensor, method for producing the same, terminal and method for welding terminal and electric wire |
FR2837926B1 (fr) | 2002-03-27 | 2004-05-28 | Siemens Vdo Automotive | Procede de fabrication d'un capteur de vitesse d'une roue et capteur correspondant |
JP3720801B2 (ja) * | 2002-10-24 | 2005-11-30 | 三菱電機株式会社 | 磁気検出装置 |
EP1583148A4 (en) * | 2003-01-08 | 2007-06-27 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME |
DE10308742A1 (de) | 2003-02-28 | 2004-09-16 | Krauss-Maffei Kunststofftechnik Gmbh | Verfahren zur Herstellung von mehrkomponentigen Kunststoffformteilen |
US7355184B2 (en) * | 2003-04-07 | 2008-04-08 | Canon Kabushiki Kaisha | Radiation detecting apparatus and method for manufacturing the same |
US20040232906A1 (en) | 2003-05-19 | 2004-11-25 | Taneyhill David J. | High temperature magnetoresistive sensor |
DE10333035A1 (de) | 2003-07-21 | 2005-02-10 | Hella Kgaa Hueck & Co. | Sensoreinrichtung |
DE10333197A1 (de) | 2003-07-22 | 2005-02-10 | Krauss-Maffei Kunststofftechnik Gmbh | Verfahren zur Herstellung eines Kunststoff-Verbundbauteils |
US6844214B1 (en) * | 2003-08-21 | 2005-01-18 | Xerox, Corporation | Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication |
FR2864700A1 (fr) * | 2003-12-31 | 2005-07-01 | Siemens Vdo Automotive | Procede d'enrobage d'une unite electronique d'un capteur et capteur correspondant |
JP2005227156A (ja) | 2004-02-13 | 2005-08-25 | Honda Lock Mfg Co Ltd | センサ装置 |
US7635418B2 (en) | 2004-12-03 | 2009-12-22 | Nordson Corporation | Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate |
DE102004060297A1 (de) | 2004-12-15 | 2006-06-22 | Robert Bosch Gmbh | Magnetsensoranordnung |
DE102004062087A1 (de) | 2004-12-23 | 2006-04-06 | Daimlerchrysler Ag | Befestigungsvorrichtung eines Sensors |
JP4473141B2 (ja) | 2005-01-04 | 2010-06-02 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
JP4561613B2 (ja) | 2005-11-28 | 2010-10-13 | 株式会社デンソー | 磁気センサ |
GB0525021D0 (en) | 2005-12-08 | 2006-01-18 | Scalar Technologies Ltd | Coating thickness gauge |
US7536909B2 (en) | 2006-01-20 | 2009-05-26 | Memsic, Inc. | Three-dimensional multi-chips and tri-axial sensors and methods of manufacturing the same |
US20070262249A1 (en) | 2006-05-11 | 2007-11-15 | Lee Chuen C | Encoder having angled die placement |
DE102007037910A1 (de) * | 2006-08-10 | 2008-04-24 | Geiger Technik Gmbh | Verfahren zur Herstellung eines Zwei-Komponenten-Bauteils und Zwei-Komponenten-Bauteil |
DE102006043015A1 (de) | 2006-09-13 | 2008-03-27 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Bauteils und Bauteil |
DE102006051199A1 (de) * | 2006-10-30 | 2008-05-08 | Robert Bosch Gmbh | Elektrisches Bauelement mit äußerer Kontaktierung |
DE202007002582U1 (de) | 2007-02-22 | 2008-07-03 | Hartmann Codier Gmbh | Drehimpulsgeber |
EP2134990B1 (de) | 2007-03-19 | 2011-09-21 | Conti Temic Microelectronic GmbH | Gehäuse mit vorrichtung zum fixieren eines elektronischen bauteils |
JP5329785B2 (ja) * | 2007-08-28 | 2013-10-30 | 花王株式会社 | 吸収性物品用シート |
DE102007046304A1 (de) * | 2007-09-27 | 2009-04-02 | Robert Bosch Gmbh | Sensor und zugehöriges Herstellungsverfahren |
-
2008
- 2008-12-19 DE DE102008064046A patent/DE102008064046A1/de not_active Withdrawn
-
2009
- 2009-10-01 CN CN200980139136.8A patent/CN102171016B/zh active Active
- 2009-10-01 WO PCT/EP2009/062749 patent/WO2010037810A1/de active Application Filing
- 2009-10-01 KR KR1020117009797A patent/KR101644777B1/ko active IP Right Grant
- 2009-10-01 EP EP09783639.9A patent/EP2349672B1/de active Active
- 2009-10-01 US US13/121,494 patent/US8820160B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1215363A (zh) * | 1996-03-29 | 1999-04-28 | Itt制造企业公司 | 塑料探测器及其制造方法 |
WO2007123310A1 (en) * | 2006-04-21 | 2007-11-01 | Seoul Semiconductor Co., Ltd. | Method of fabricating light emitting diode package with surface treated resin encapsulant and the package fabricated by the method |
Non-Patent Citations (1)
Title |
---|
"等离子体清洗及其在电子封装中的应用";龙乐;《电子与封装》;20080420;第8卷(第4期);第12~15页 * |
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DE102008064046A1 (de) | 2010-04-08 |
EP2349672B1 (de) | 2019-12-11 |
KR101644777B1 (ko) | 2016-08-02 |
WO2010037810A1 (de) | 2010-04-08 |
CN102171016A (zh) | 2011-08-31 |
EP2349672A1 (de) | 2011-08-03 |
US8820160B2 (en) | 2014-09-02 |
US20110175598A1 (en) | 2011-07-21 |
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