CN102157521B - 半导体集成电路 - Google Patents

半导体集成电路 Download PDF

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Publication number
CN102157521B
CN102157521B CN201110068579.1A CN201110068579A CN102157521B CN 102157521 B CN102157521 B CN 102157521B CN 201110068579 A CN201110068579 A CN 201110068579A CN 102157521 B CN102157521 B CN 102157521B
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CN
China
Prior art keywords
switch
line
block
semiconductor integrated
circuit
Prior art date
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Active
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CN201110068579.1A
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English (en)
Chinese (zh)
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CN102157521A (zh
Inventor
绪方博美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN102157521A publication Critical patent/CN102157521A/zh
Application granted granted Critical
Publication of CN102157521B publication Critical patent/CN102157521B/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN201110068579.1A 2007-09-18 2008-09-18 半导体集成电路 Active CN102157521B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007241517A JP5528662B2 (ja) 2007-09-18 2007-09-18 半導体集積回路
JP241517/07 2007-09-18

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008101494840A Division CN101393910B (zh) 2007-09-18 2008-09-18 半导体集成电路

Publications (2)

Publication Number Publication Date
CN102157521A CN102157521A (zh) 2011-08-17
CN102157521B true CN102157521B (zh) 2014-08-20

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110068579.1A Active CN102157521B (zh) 2007-09-18 2008-09-18 半导体集成电路
CN2008101494840A Expired - Fee Related CN101393910B (zh) 2007-09-18 2008-09-18 半导体集成电路

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2008101494840A Expired - Fee Related CN101393910B (zh) 2007-09-18 2008-09-18 半导体集成电路

Country Status (4)

Country Link
US (7) US7940080B2 (enExample)
JP (1) JP5528662B2 (enExample)
CN (2) CN102157521B (enExample)
TW (1) TWI430398B (enExample)

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JP5528662B2 (ja) * 2007-09-18 2014-06-25 ソニー株式会社 半導体集積回路
US8495547B2 (en) * 2009-11-11 2013-07-23 International Business Machines Corporation Providing secondary power pins in integrated circuit design
JP5404678B2 (ja) * 2011-03-10 2014-02-05 株式会社東芝 電源制御装置
US8451026B2 (en) * 2011-05-13 2013-05-28 Arm Limited Integrated circuit, method of generating a layout of an integrated circuit using standard cells, and a standard cell library providing such standard cells
US8902625B2 (en) * 2011-11-22 2014-12-02 Marvell World Trade Ltd. Layouts for memory and logic circuits in a system-on-chip
US8823399B1 (en) 2013-10-07 2014-09-02 Cypress Semiconductor Corporation Detect and differentiate touches from different size conductive objects on a capacitive button
JP6264860B2 (ja) 2013-11-27 2018-01-24 セイコーエプソン株式会社 記録装置
US9305898B2 (en) 2014-01-23 2016-04-05 Freescale Semiconductor, Inc. Semiconductor device with combined power and ground ring structure
US9177834B2 (en) 2014-02-19 2015-11-03 Freescale Semiconductor, Inc. Power bar design for lead frame-based packages
CN109155284B (zh) * 2016-06-01 2022-09-23 株式会社索思未来 半导体集成电路装置
KR102630392B1 (ko) 2016-12-06 2024-01-29 삼성전자주식회사 반도체 장치, 반도체 장치의 레이아웃 설계 방법, 및 반도체 장치의 제조 방법
US10417371B2 (en) * 2017-01-27 2019-09-17 Arm Limited Power grid healing techniques
US10452803B2 (en) * 2017-01-27 2019-10-22 Arm Limited Power grid insertion technique
JP7041368B2 (ja) * 2017-03-29 2022-03-24 株式会社ソシオネクスト 半導体集積回路装置
US10346574B2 (en) * 2017-06-16 2019-07-09 Qualcomm Incorporated Effective substitution of global distributed head switch cells with cluster head switch cells
JP7077816B2 (ja) 2018-06-25 2022-05-31 株式会社ソシオネクスト 半導体装置
WO2020217400A1 (ja) 2019-04-25 2020-10-29 株式会社ソシオネクスト 半導体装置
WO2020217396A1 (ja) 2019-04-25 2020-10-29 株式会社ソシオネクスト 半導体装置
CN112864127B (zh) * 2019-11-28 2024-03-08 扬智科技股份有限公司 集成电路的导线互连结构
CN116472605B (zh) * 2020-11-27 2025-06-24 株式会社索思未来 半导体集成电路装置的设计方法、半导体集成电路装置以及计算机可读记录介质
CN113515826B (zh) * 2021-04-09 2022-11-25 云南电网有限责任公司昆明供电局 配电网合环线路拓扑搜索方法及系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888898B2 (ja) * 1990-02-23 1999-05-10 株式会社日立製作所 半導体集積回路
CN1423420A (zh) * 2001-11-22 2003-06-11 富士通株式会社 多阈值mis集成电路器件及其电路设计方法
CN1697180A (zh) * 2004-05-13 2005-11-16 株式会社东芝 半导体集成电路及半导体集成电路的设计方法

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TW382164B (en) 1996-04-08 2000-02-11 Hitachi Ltd Semiconductor IC device with tunnel current free MOS transistors for power supply intercept of main logic
JP4056107B2 (ja) 1997-06-20 2008-03-05 エルピーダメモリ株式会社 半導体集積回路
JP3786608B2 (ja) * 2002-01-28 2006-06-14 株式会社ルネサステクノロジ 半導体集積回路装置
JP3951773B2 (ja) 2002-03-28 2007-08-01 富士通株式会社 リーク電流遮断回路を有する半導体集積回路
US7078932B2 (en) * 2003-04-25 2006-07-18 Stmicroelectronics Pvt. Ltd. Programmable logic device with reduced power consumption
US6861753B1 (en) * 2003-10-09 2005-03-01 International Business Machines Corporation Method and apparatus for performing power routing on a voltage island within an integrated circuit chip
JP4435553B2 (ja) * 2003-12-12 2010-03-17 パナソニック株式会社 半導体装置
JP4200926B2 (ja) * 2004-03-10 2008-12-24 ソニー株式会社 半導体集積回路
JP4428514B2 (ja) * 2004-03-30 2010-03-10 株式会社ルネサステクノロジ 半導体集積回路装置
WO2005104233A1 (en) 2004-04-27 2005-11-03 Koninklijke Philips Electronics N.V. Integrated circuit layout for virtual power supply
US7279926B2 (en) * 2004-05-27 2007-10-09 Qualcomm Incoporated Headswitch and footswitch circuitry for power management
EP1638145A1 (en) * 2004-09-20 2006-03-22 Infineon Technologies AG Embedded switchable power ring
US20090079465A1 (en) * 2005-04-21 2009-03-26 Toshio Sasaki Semiconductor integrated circuit
JP2007158035A (ja) * 2005-12-06 2007-06-21 Seiko Epson Corp 半導体集積回路
US7712066B2 (en) * 2005-12-29 2010-05-04 Agere Systems, Inc. Area-efficient power switching cell
US7509613B2 (en) * 2006-01-13 2009-03-24 Sequence Design, Inc. Design method and architecture for power gate switch placement and interconnection using tapless libraries
JP4188974B2 (ja) 2006-02-06 2008-12-03 株式会社ルネサステクノロジ 半導体集積回路
JP2007243077A (ja) * 2006-03-13 2007-09-20 Renesas Technology Corp 半導体集積回路装置
KR100780750B1 (ko) * 2006-05-11 2007-11-30 한국과학기술원 표준 셀과 파워 게이팅 셀을 이용한 파워 네트워크 및 이를가지는 반도체 장치
US7723867B2 (en) * 2007-05-31 2010-05-25 Arm Limited Power gating of circuits
JP5528662B2 (ja) * 2007-09-18 2014-06-25 ソニー株式会社 半導体集積回路
JP4636077B2 (ja) * 2007-11-07 2011-02-23 ソニー株式会社 半導体集積回路
JP4535134B2 (ja) * 2008-01-16 2010-09-01 ソニー株式会社 半導体集積回路およびその電源制御方法
JP4535136B2 (ja) * 2008-01-17 2010-09-01 ソニー株式会社 半導体集積回路、および、スイッチの配置配線方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888898B2 (ja) * 1990-02-23 1999-05-10 株式会社日立製作所 半導体集積回路
CN1423420A (zh) * 2001-11-22 2003-06-11 富士通株式会社 多阈值mis集成电路器件及其电路设计方法
CN1697180A (zh) * 2004-05-13 2005-11-16 株式会社东芝 半导体集成电路及半导体集成电路的设计方法

Also Published As

Publication number Publication date
CN102157521A (zh) 2011-08-17
US20120256683A1 (en) 2012-10-11
US10263617B2 (en) 2019-04-16
JP5528662B2 (ja) 2014-06-25
CN101393910B (zh) 2011-05-18
US8890568B2 (en) 2014-11-18
US9058979B2 (en) 2015-06-16
US20150194955A1 (en) 2015-07-09
JP2009076501A (ja) 2009-04-09
US7940080B2 (en) 2011-05-10
US20170331472A1 (en) 2017-11-16
CN101393910A (zh) 2009-03-25
TW200935559A (en) 2009-08-16
US9252763B2 (en) 2016-02-02
US20160156349A1 (en) 2016-06-02
US8143914B2 (en) 2012-03-27
US9735775B2 (en) 2017-08-15
US20140232448A1 (en) 2014-08-21
US20110102076A1 (en) 2011-05-05
US20090072888A1 (en) 2009-03-19
TWI430398B (zh) 2014-03-11

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