CN102154692B - 一种In-Se基热电材料的制备方法 - Google Patents
一种In-Se基热电材料的制备方法 Download PDFInfo
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CN102154692B true CN102154692B (zh) | 2012-07-18 |
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Families Citing this family (2)
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CN103396122B (zh) * | 2013-08-09 | 2015-12-02 | 中国科学院宁波材料技术与工程研究所 | 一种Cd-Te基热电材料及其制备方法 |
CN113493924B (zh) * | 2020-04-03 | 2022-07-12 | 中国科学院上海硅酸盐研究所 | 一种无机柔性和塑性半导体单晶InSe材料及其制备方法和应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4589918A (en) * | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
CN1488572A (zh) * | 2003-08-20 | 2004-04-14 | 中国科学院上海硅酸盐研究所 | 一种碲化铋基热电材料的制备方法 |
CN1962416A (zh) * | 2006-11-23 | 2007-05-16 | 中国科学院宁波材料技术与工程研究所 | 一种碲化铋基热电材料的制备工艺 |
CN1974079A (zh) * | 2006-12-08 | 2007-06-06 | 中国科学院宁波材料技术与工程研究所 | 一种碲化铋基热电材料的制备方法 |
CN101913575A (zh) * | 2010-08-31 | 2010-12-15 | 武汉理工大学 | 一种In4Se3热电化合物粉体的制备方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US4589918A (en) * | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
CN1488572A (zh) * | 2003-08-20 | 2004-04-14 | 中国科学院上海硅酸盐研究所 | 一种碲化铋基热电材料的制备方法 |
CN1962416A (zh) * | 2006-11-23 | 2007-05-16 | 中国科学院宁波材料技术与工程研究所 | 一种碲化铋基热电材料的制备工艺 |
CN1974079A (zh) * | 2006-12-08 | 2007-06-06 | 中国科学院宁波材料技术与工程研究所 | 一种碲化铋基热电材料的制备方法 |
CN101913575A (zh) * | 2010-08-31 | 2010-12-15 | 武汉理工大学 | 一种In4Se3热电化合物粉体的制备方法 |
Non-Patent Citations (2)
Title |
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Jong-Soo Rhyee,etc.Peierls distortion as a route to high thermoelectric performance in In4Se32d crystals.《Nature》.2009,第459卷965-968. * |
M.M.Nassary,etc.Thermoelectric Properties of Indium Sesquiselenide Single Crystals.《Crystal Research and Technology》.1994,第29卷(第2期),281-287. * |
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Application publication date: 20110817 Assignee: Ningbo Dimaige Precision Manufacturing Co.,Ltd. Assignor: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY & ENGINEERING, CHINESE ACADEMY OF SCIENCES Contract record no.: X2023980041749 Denomination of invention: A Preparation Method of In Se Based Thermoelectric Materials Granted publication date: 20120718 License type: Common License Record date: 20230915 |
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Application publication date: 20110817 Assignee: Ningbo Xinzhu Magnetic Industry Co.,Ltd. Assignor: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY & ENGINEERING, CHINESE ACADEMY OF SCIENCES Contract record no.: X2023980042604 Denomination of invention: A Preparation Method of In Se Based Thermoelectric Materials Granted publication date: 20120718 License type: Common License Record date: 20230927 |