CN102144293A - 发光显示装置 - Google Patents
发光显示装置 Download PDFInfo
- Publication number
- CN102144293A CN102144293A CN2009801040840A CN200980104084A CN102144293A CN 102144293 A CN102144293 A CN 102144293A CN 2009801040840 A CN2009801040840 A CN 2009801040840A CN 200980104084 A CN200980104084 A CN 200980104084A CN 102144293 A CN102144293 A CN 102144293A
- Authority
- CN
- China
- Prior art keywords
- electrode
- capacitor
- capacitors
- display unit
- luminous display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 324
- 239000010410 layer Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000011229 interlayer Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Theoretical Computer Science (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410406704.9A CN104157676B (zh) | 2009-11-27 | 2009-11-27 | 发光显示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2009/006415 WO2011064819A1 (ja) | 2009-11-27 | 2009-11-27 | 発光表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410406704.9A Division CN104157676B (zh) | 2009-11-27 | 2009-11-27 | 发光显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102144293A true CN102144293A (zh) | 2011-08-03 |
CN102144293B CN102144293B (zh) | 2015-01-07 |
Family
ID=44065944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980104084.0A Active CN102144293B (zh) | 2009-11-27 | 2009-11-27 | 发光显示装置 |
Country Status (5)
Country | Link |
---|---|
US (4) | US9461102B2 (zh) |
JP (1) | JP4801794B2 (zh) |
KR (1) | KR101600100B1 (zh) |
CN (1) | CN102144293B (zh) |
WO (1) | WO2011064819A1 (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102474939B (zh) | 2009-11-04 | 2015-03-04 | 松下电器产业株式会社 | 显示面板装置及其制造方法 |
CN102144293B (zh) * | 2009-11-27 | 2015-01-07 | 松下电器产业株式会社 | 发光显示装置 |
KR101839533B1 (ko) * | 2010-12-28 | 2018-03-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 이의 구동 방법 및 그 제조 방법 |
KR20120079351A (ko) * | 2011-01-04 | 2012-07-12 | 삼성모바일디스플레이주식회사 | 유기발광 표시장치 및 그 제조방법 |
KR101846589B1 (ko) | 2011-10-28 | 2018-04-06 | 가부시키가이샤 제이올레드 | 박막 반도체 장치 및 박막 반도체 장치의 제조 방법 |
JP5998458B2 (ja) * | 2011-11-15 | 2016-09-28 | セイコーエプソン株式会社 | 画素回路、電気光学装置、および電子機器 |
US9466239B2 (en) * | 2011-11-17 | 2016-10-11 | Sharp Kabushiki Kaisha | Current drive type display device and drive method thereof |
KR20130089044A (ko) * | 2012-02-01 | 2013-08-09 | 삼성디스플레이 주식회사 | 반도체 장치 및 그를 구비하는 평판표시장치 |
JP6357663B2 (ja) * | 2013-09-06 | 2018-07-18 | 株式会社Joled | 表示装置 |
JP6164059B2 (ja) * | 2013-11-15 | 2017-07-19 | ソニー株式会社 | 表示装置、電子機器、及び表示装置の駆動方法 |
KR102278601B1 (ko) * | 2014-03-07 | 2021-07-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102189223B1 (ko) | 2014-07-10 | 2020-12-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 그 구동 방법 및 제조 방법 |
KR102245722B1 (ko) * | 2014-08-05 | 2021-04-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102175811B1 (ko) * | 2014-09-17 | 2020-11-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102261006B1 (ko) * | 2014-10-08 | 2021-06-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR20160055546A (ko) | 2014-11-10 | 2016-05-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102292514B1 (ko) | 2014-11-19 | 2021-08-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP6464368B2 (ja) | 2014-11-28 | 2019-02-06 | 株式会社Joled | 薄膜トランジスタ基板 |
KR102300026B1 (ko) * | 2015-01-08 | 2021-09-09 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102328678B1 (ko) * | 2015-02-09 | 2021-11-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이를 구비한 디스플레이 장치, 박막 트랜지스터 기판 제조방법 및 디스플레이 장치 제조방법 |
KR102433316B1 (ko) * | 2015-08-06 | 2022-08-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN106206613B (zh) | 2016-08-24 | 2020-12-29 | 昆山工研院新型平板显示技术中心有限公司 | 一种柔性显示基板及其制备方法 |
JP2018036290A (ja) * | 2016-08-29 | 2018-03-08 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109427287B (zh) * | 2017-08-29 | 2020-12-22 | 昆山国显光电有限公司 | 适用于高像素密度的像素驱动电路、像素结构和制作方法 |
JP7171738B2 (ja) | 2018-01-11 | 2022-11-15 | アプライド マテリアルズ インコーポレイテッド | 金属酸化物スイッチを含み小型蓄電コンデンサを備えた薄膜トランジスタ |
KR102591811B1 (ko) * | 2018-05-18 | 2023-10-23 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
KR102653575B1 (ko) * | 2019-07-29 | 2024-04-03 | 엘지디스플레이 주식회사 | 표시 장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030141811A1 (en) * | 2001-12-29 | 2003-07-31 | Lg. Philips Lcd Co., Ltd. | Active matrix organic luminescence display device and manufacturing method for the same |
CN1773593A (zh) * | 2004-11-08 | 2006-05-17 | 三星Sdi株式会社 | 有机发光显示器及其驱动方法 |
EP1918996A2 (en) * | 2006-10-31 | 2008-05-07 | Hitachi, Ltd. | Picture element driving circuit of display panel and display device using the same |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
US6509688B1 (en) * | 1999-07-08 | 2003-01-21 | Lg. Philips Lcd Co., Ltd. | Electro-luminescent display with storage capacitor formed in longitudinal direction of power supply line |
KR100348995B1 (ko) * | 1999-09-08 | 2002-08-17 | 엘지.필립스 엘시디 주식회사 | 4 마스크를 이용한 액정표시소자의 제조방법 및 그에 따른 액정표시소자 |
CN101009322B (zh) * | 2001-11-09 | 2012-06-27 | 株式会社半导体能源研究所 | 发光器件 |
JP4149168B2 (ja) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP4549889B2 (ja) | 2004-05-24 | 2010-09-22 | 三星モバイルディスプレイ株式會社 | キャパシタ及びこれを利用する発光表示装置 |
US20050275352A1 (en) * | 2004-06-14 | 2005-12-15 | Au Optronics Corporation. | Redundant storage capacitor and method for repairing OLED pixels and driving circuits |
US7652291B2 (en) | 2005-05-28 | 2010-01-26 | Samsung Mobile Display Co., Ltd. | Flat panel display |
KR100624137B1 (ko) | 2005-08-22 | 2006-09-13 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치의 화소회로 및 그의 구동방법 |
JP5250960B2 (ja) | 2006-01-24 | 2013-07-31 | セイコーエプソン株式会社 | 発光装置および電子機器 |
JP5076550B2 (ja) * | 2006-04-03 | 2012-11-21 | セイコーエプソン株式会社 | 半導体装置 |
US7863612B2 (en) | 2006-07-21 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and semiconductor device |
JP5147320B2 (ja) * | 2006-07-21 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2008107785A (ja) | 2006-09-29 | 2008-05-08 | Seiko Epson Corp | 電気光学装置および電子機器 |
JP4934599B2 (ja) * | 2007-01-29 | 2012-05-16 | キヤノン株式会社 | アクティブマトリクス表示装置 |
JP2008257086A (ja) | 2007-04-09 | 2008-10-23 | Sony Corp | 表示装置、表示装置の製造方法および電子機器 |
JP5435907B2 (ja) | 2007-08-17 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR101320499B1 (ko) * | 2007-10-17 | 2013-10-22 | 엘지디스플레이 주식회사 | 액정표시소자 |
GB0721567D0 (en) * | 2007-11-02 | 2007-12-12 | Cambridge Display Tech Ltd | Pixel driver circuits |
JP5308656B2 (ja) | 2007-12-10 | 2013-10-09 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 画素回路 |
JP5046915B2 (ja) * | 2007-12-27 | 2012-10-10 | 京セラ株式会社 | 表示装置用基板、表示装置、及び表示装置用基板の製造方法 |
JP2009200336A (ja) * | 2008-02-22 | 2009-09-03 | Sony Corp | 自発光型表示装置 |
JP2009271188A (ja) * | 2008-05-01 | 2009-11-19 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置とその製造方法 |
JP4852660B2 (ja) | 2008-12-18 | 2012-01-11 | パナソニック株式会社 | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
CN102144293B (zh) * | 2009-11-27 | 2015-01-07 | 松下电器产业株式会社 | 发光显示装置 |
KR102471113B1 (ko) * | 2015-11-18 | 2022-11-28 | 삼성디스플레이 주식회사 | 표시장치 |
-
2009
- 2009-11-27 CN CN200980104084.0A patent/CN102144293B/zh active Active
- 2009-11-27 WO PCT/JP2009/006415 patent/WO2011064819A1/ja active Application Filing
- 2009-11-27 KR KR1020107012226A patent/KR101600100B1/ko active IP Right Grant
- 2009-11-27 JP JP2010521255A patent/JP4801794B2/ja active Active
-
2011
- 2011-01-24 US US13/012,294 patent/US9461102B2/en not_active Ceased
-
2014
- 2014-05-29 US US14/290,104 patent/US9093409B2/en active Active
-
2018
- 2018-09-28 US US16/145,623 patent/USRE47804E1/en active Active
-
2019
- 2019-11-01 US US16/671,675 patent/USRE48931E1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030141811A1 (en) * | 2001-12-29 | 2003-07-31 | Lg. Philips Lcd Co., Ltd. | Active matrix organic luminescence display device and manufacturing method for the same |
CN1773593A (zh) * | 2004-11-08 | 2006-05-17 | 三星Sdi株式会社 | 有机发光显示器及其驱动方法 |
EP1918996A2 (en) * | 2006-10-31 | 2008-05-07 | Hitachi, Ltd. | Picture element driving circuit of display panel and display device using the same |
Also Published As
Publication number | Publication date |
---|---|
US9093409B2 (en) | 2015-07-28 |
CN102144293B (zh) | 2015-01-07 |
US20110128211A1 (en) | 2011-06-02 |
WO2011064819A1 (ja) | 2011-06-03 |
KR101600100B1 (ko) | 2016-03-04 |
USRE47804E1 (en) | 2020-01-07 |
US9461102B2 (en) | 2016-10-04 |
KR20120098970A (ko) | 2012-09-06 |
JP4801794B2 (ja) | 2011-10-26 |
US20140264303A1 (en) | 2014-09-18 |
USRE48931E1 (en) | 2022-02-15 |
JPWO2011064819A1 (ja) | 2013-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102144293B (zh) | 发光显示装置 | |
KR100509240B1 (ko) | 표시 장치 | |
US9691793B2 (en) | Array substrate and display panel | |
US8415872B2 (en) | Organic light emitting diode display device | |
JP2015007812A (ja) | 半導体装置、表示モジュール、及び電子機器 | |
CN113593478A (zh) | 显示面板 | |
CN113629104A (zh) | 像素单元、显示基板及显示装置 | |
US9396683B2 (en) | Pixel driving circuit and display device | |
CN211629115U (zh) | 像素单元、显示基板及显示装置 | |
CN104157676A (zh) | 发光显示装置 | |
US20080054784A1 (en) | Oled Pixel Layout | |
WO2022110124A1 (zh) | 像素电路、驱动方法、显示基板和显示装置 | |
KR20220096869A (ko) | 폴더블 표시 장치 | |
KR20050050840A (ko) | 유기 전계 발광 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JANPAN ORGANIC RATE DISPLAY CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20150518 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150518 Address after: Tokyo, Japan Patentee after: JOLED Inc. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231130 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |