CN102142486A - Method for manufacturing LED (light emitting diode) with high light emission rate - Google Patents
Method for manufacturing LED (light emitting diode) with high light emission rate Download PDFInfo
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- CN102142486A CN102142486A CN2010106127084A CN201010612708A CN102142486A CN 102142486 A CN102142486 A CN 102142486A CN 2010106127084 A CN2010106127084 A CN 2010106127084A CN 201010612708 A CN201010612708 A CN 201010612708A CN 102142486 A CN102142486 A CN 102142486A
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- high light
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Abstract
The invention discloses a method for manufacturing an LED (light emitting diode) with a high light emission rate, comprising the following steps: (1) etching an N-type zone on an epitaxial wafer deposited with a P-type zone; (2) depositing a transparent electrode layer in the N-type zone; (3) photoetching a transparent electrode by utilizing a photoetching method; and (4) depositing a metal electrode on the transparent electrode of the N-type zone. By utilizing the method provided by the invention, the defects of the prior art can be solved, and the method for manufacturing the LED which has the advantages of simple structure, high light emission efficiency and high light emission rate is provided.
Description
Technical field
The present invention relates to a kind of high light-emitting rate LED manufacture method.
Background technology
LED moves towards fields such as white light from backlight, traffic lights, show label, the Landscape Lighting that is applied to electronic product, semiconductor light-emitting-diode LED progressively enters general lighting market as new type light source from special applications market, become the important branch of modern optoelectronic devices, demonstrate huge application potential.In special lighting is used, advantages such as LED compares that existing lighting source has energy savings, the life-span is long, volume is little, luminous efficiency is high, pollution-free, rich color.Generally speaking, metal has ohmic contact to contact with Schottky with semi-conductive touching act.At present, the metal that is used for making Ohm contact electrode is the metallic combination of Ti/Al, Cr/Pt/Au, and the metal electrode that adopts this type of metallic combination to finish has lower feature contact impedance, can obtain excellent ohmic contact characteristic.But, adopt the thermal stability of the metal electrode that this type of metallic combination finishes not good, such as Au, these metals are extinction normally, and the light that sends from the active area sidewall is absorbed major part by N type metal like this, thereby reduced the luminous efficiency of led chip; Unsteadiness such as low, easy oxidation of the fusing point of metal A l itself for another example; and the mutual diffusion between Al and the Au produces the Kirderdall effect; especially under the condition of working long hours, the Ti layer is limited to the barrier effect of protective layer Au diffusion, and the interior diffusion of Au all can cause the electric heating stabilizer pole poor.
Summary of the invention
In order to overcome the deficiency that prior art exists, the object of the present invention is to provide a kind of simple in structure, high light-emitting rate LED manufacture method that light extraction efficiency is high.
For reaching above purpose, the invention provides a kind of high light-emitting rate LED manufacture method, comprise the steps
1) on the epitaxial wafer that has deposited the p type island region territory, etches N type zone;
2) at N type area deposition transparent electrode layer;
3) use the method for photoetching to make transparency electrode by lithography;
4) deposit metal electrodes on the transparency electrode in N type zone.
Further improvement of the present invention is at the p type island region area deposition transparency electrode is arranged.
Further improvement of the present invention is, deposit metal electrodes on the transparency electrode in p type island region territory.
Further improvement of the present invention is that the height of the upper surface of N type zone transparency electrode is equal to or higher than the height of the upper surface of active area.
Further improvement of the present invention is, by thermal evaporation or beam methods deposition N type regional metal electrode.
Further improvement of the present invention is, by thermal evaporation or beam methods deposition p type island region territory metal electrode.
Further improvement of the present invention is that engraving method is the ICP etching in the step 1).
Further improvement of the present invention is, describedly is lithographically dry lithography or wet method photoetching.
Owing to adopted above technical scheme, beneficial effect of the present invention is: behind the deposit transparent electrode, be retained in the transparency electrode of N electrode zone, the light that sends from the active area sidewall is not absorbed like this, thereby improves the luminous efficiency of led chip.
Description of drawings
Accompanying drawing 1 is the structural representation of the product of manufacturing among a kind of high light-emitting rate LED manufacture method of the present invention embodiment one;
Accompanying drawing 2 is the structural representation of the product of manufacturing among a kind of high light-emitting rate LED manufacture method of the present invention embodiment two.
Embodiment
Below preferred embodiment of the present invention is described in detail, thereby protection scope of the present invention is made more explicit defining so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that.
Below in conjunction with specific embodiments of the invention explanation high light-emitting rate LED manufacture method.
Embodiment one
Referring to accompanying drawing 1, the embodiment of the invention one provides a kind of high light-emitting rate LED manufacture method, comprises the steps
1) on the epitaxial wafer that has deposited P GaN zone, use the ICP engraving method to etch N GaN zone;
2) at the transparent electrode layer of N GaN zone and P GaN area deposition use ZnO material;
Stop the deposition of transparent electrode layer when 3) height of the upper surface of N GaN zone transparent electrode layer equals the height of upper surface of active area;
4) use the wet method photoetching method to make transparency electrode by lithography;
5) on the transparency electrode in N GaN zone and P GaN zone, utilize the method deposit metal electrodes of thermal evaporation, the final metal electrode that just forms with partially transparent electrode, the light that the active area side surface sends can not be absorbed when passing through N GaN zone transparency electrode ZnO, has improved the light extraction efficiency of LED.
What need mention especially is, the material in p type island region territory and N type zone is GaN in the present embodiment, and the present invention can be applied to the LED of various unlike materials, and the material of LED does not limit protection scope of the present invention.
Certainly the material of transparency electrode is ZnO in the present embodiment; the present invention also is not limited to only use the transparency electrode of ZnO manufacturing; as long as the material of transparency electrode to the absorption efficiency of light at the bottom of and the conducting electricity very well of this transparency electrode; all can be applied to the present invention, the material of transparency electrode does not limit protection scope of the present invention.
Embodiment two
The embodiment of the invention two provides a kind of high light-emitting rate LED manufacture method, comprises the steps
1) on the epitaxial wafer that has deposited P GaN zone, use the ICP engraving method to etch N GaN zone;
2) use the transparent electrode layer of ZnO material at N GaN area deposition;
Stop the deposition of transparency electrode ZnO when 3) height of the upper surface of N GaN zone transparency electrode equals the height of upper surface of active area;
4) use dry lithography to make transparency electrode by lithography;
5) on the transparency electrode in N GaN zone, utilize the method deposit metal electrodes of electron beam, utilize the method deposit metal electrodes of electron beam in P GaN zone, finally form metal electrode with partially transparent electrode in N GaN zone, the light that the active area side surface sends can not be absorbed when passing through N GaN zone transparency electrode ZnO, has improved the light extraction efficiency of LED.
By above-mentioned execution mode, be not difficult to find out that the present invention is a kind of simple in structure, high light-emitting rate LED manufacture method that light extraction efficiency is high.
Above execution mode only is explanation technical conceive of the present invention and characteristics; its purpose is to allow the people that is familiar with this technology understand content of the present invention and is implemented; can not limit protection scope of the present invention with this, all equivalences that spirit is done according to the present invention change or modification all is encompassed in protection scope of the present invention.
Claims (8)
1. a high light-emitting rate LED manufacture method is characterized in that: comprise the steps
1) on the epitaxial wafer that has deposited the p type island region territory, etches N type zone;
2) at N type area deposition transparent electrode layer;
3) use the method for photoetching to make transparency electrode by lithography;
4) deposit metal electrodes on the transparency electrode in N type zone.
2. high light-emitting rate LED manufacture method according to claim 1 is characterized in that: at the p type island region area deposition transparent electrode layer is arranged, use photoetching method to make transparency electrode by lithography.
3. high light-emitting rate LED manufacture method according to claim 2 is characterized in that: deposit metal electrodes on the transparency electrode in p type island region territory.
4. high light-emitting rate LED manufacture method according to claim 1 is characterized in that: the height of the upper surface of N type zone transparency electrode is equal to or higher than the height of the upper surface of active area.
5. high light-emitting rate LED manufacture method according to claim 1 is characterized in that: by thermal evaporation or beam methods deposition N type regional metal electrode.
6. high light-emitting rate LED manufacture method according to claim 1 is characterized in that: by thermal evaporation or beam methods deposition p type island region territory metal electrode.
7. high light-emitting rate LED manufacture method according to claim 1 is characterized in that: engraving method is the ICP etching in the step 1).
8. according to the high light-emitting rate LED manufacture method described in claim 1 or 2, it is characterized in that: describedly be lithographically dry lithography or wet method photoetching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106127084A CN102142486A (en) | 2010-12-29 | 2010-12-29 | Method for manufacturing LED (light emitting diode) with high light emission rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106127084A CN102142486A (en) | 2010-12-29 | 2010-12-29 | Method for manufacturing LED (light emitting diode) with high light emission rate |
Publications (1)
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| CN102142486A true CN102142486A (en) | 2011-08-03 |
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| CN2010106127084A Pending CN102142486A (en) | 2010-12-29 | 2010-12-29 | Method for manufacturing LED (light emitting diode) with high light emission rate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040166379A1 (en) * | 2003-02-25 | 2004-08-26 | Rohm Co., Ltd. | Transparent electrode |
| US20050179045A1 (en) * | 2004-02-13 | 2005-08-18 | Ryu Yung H. | Nitride semiconductor light emitting diode having improved ohmic contact structure and fabrication method thereof |
| JP2006351575A (en) * | 2005-06-13 | 2006-12-28 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting element |
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2010
- 2010-12-29 CN CN2010106127084A patent/CN102142486A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040166379A1 (en) * | 2003-02-25 | 2004-08-26 | Rohm Co., Ltd. | Transparent electrode |
| US20050179045A1 (en) * | 2004-02-13 | 2005-08-18 | Ryu Yung H. | Nitride semiconductor light emitting diode having improved ohmic contact structure and fabrication method thereof |
| JP2006351575A (en) * | 2005-06-13 | 2006-12-28 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting element |
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Application publication date: 20110803 |
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