CN102124138A - 适用于火花蒸发的靶的应用以及适于此应用的靶的制备方法 - Google Patents
适用于火花蒸发的靶的应用以及适于此应用的靶的制备方法 Download PDFInfo
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Abstract
本发明涉及一种应用靶的方法,该靶适于通过火花蒸发制备金属氧化物层和/或金属氮化物层的涂层工艺,其中该靶可在高于靶中所用金属的熔点的温度下运行,且其中该靶由其氧化物和/或氮化物是非导电性的金属制成。此外,本发明还涉及一种靶的应用,该靶用于通过火花蒸发制备金属氧化物层和/或金属氮化物层,其中该靶具有由金属制成的基质,其中引入有该金属的非导电的氧化物和/或氮化物。
Description
本发明涉及一种靶的应用,该靶用于通过火花蒸发(Funkenverdampfung)涂敷金属氧化化层和/或金属氮化物层的涂层装置中,本发明还涉及通过火花蒸发制备金属氧化物层的方法。本发明特别涉及该包含至少一种金属成分和陶瓷成分的靶的运行。本发明对以铝作为低熔点组分的靶特别重要。
阴极火花蒸发是多年来的成熟方法,其已应用于涂敷工件和构件,并不仅用此淀积多种多样的金属层,也用此淀积金属氮化物、金属碳化物和金属碳氮化物。在所有这些应用中,该靶是火花放电的阴极,该阴极在低电压和高电流下运行,并由此蒸发该靶-(阴极)-材料。为起动该火花放电,可利用直流电压源作为最简单的和最廉价的电流源。
借助于火花蒸发制备金属氧化物是成问题的。其难以在氧气中或含氧气氛中起动直流火花放电,以例如在工件或构件上淀积氧化物层。其危险在于,由于在靶上覆有绝缘层,所以使该过程几乎是不可控的。
这会导致靶上火花移动的导电区的收缩,最后导致火花放电的中断。
在US 5518597中描述了氧化层的制备,其中在升温下进行层淀积,该方法基于还将阳极加热 (800—1200℃),且该反应性气体不直接在靶处进入。高的阳极温度使阳极呈导电性,并可使火花稳定运行。
类似阳极情况,该阴极在升温下运行应至少降低靶中毒的问题。因此希望的是,可在涂层装置中于高温下运行靶,而且优选在高于靶中所用金属的熔点的温度下运行。
这可通过使用具有熔点提高的靶材料的靶来实现,这导致该靶材料的高的蒸发焓。在现有技术中,已知一种适于制备氮化物层的工艺,该工艺中所用的靶不仅含金属Ti还含可导致靶熔点提高的导电TiN。在蒸发时脱出的TiN可直接引入层中。因为TiN是一种导电材料,所以该火花可不受干扰地在靶表面上移动,且基于该靶材料的提高的蒸发焓,该靶材料和“中毒”的靶表面的蒸发焓的差降到最小。
也已知使用钛和铝的合金靶来制备TiAlN-层,其中混入TiN导电材料以提高熔点。如果该层也要包含铬组分,则可应用其中也混入导电的CrN的靶。按现有技术,混入金属靶中的材料需滿足两个条件:一方面该材料必需是导电的,另一方面该材料必需是该待形成层的组分。周期表中IVa族、Va族、VIa族的金属的氮化物是导电的,但其它的那些金属是非导电的。这自然就大大地限制了用于此工艺的材料的选用。由于用所述材料可升高熔点,因此再进一步升高熔点就变得很困难。还严重的是,如果要形成的层仅包含绝缘层,则按现有技术就不可以熔点升高来操作。
但这最终表明,上述的提高熔点的可能性对Al-靶而言至今未可应用,因为氮化铝和氧化铝均是不导电的。因此仅包含铝作为金属成分的非导电层(如氧化物)的制备仍是困难的。
因此,本发明的目的是提供一种方法,按此方法可借助于火花蒸发在基底上涂敷含金属成分的非导电层。
本发明应用一种靶,其基质由其氮化物和/或氧化物是非导电性的金属组成,其中与现有技术相比,该靶具有升高的熔点。
本发明应用一种靶,其中将该靶的金属的非导电氧化物和/或氮化物引入该靶的金属基质中。
在此情况下,在靶中混有非导电材料,以致该靶的表面从宏观看仍是导电的。由此可确保非导电成分引入导电的基材的基质中。该导电基质呈联结的网络位于表面上,在本发明的应用中,该网络可使火花越过靶而移动。
按一个优选实施方案,应用一种靶,其中使非导电的氧化铝颗粒引入靶的铝基质中。
按另一个优选实施方案,该氧化铝颗粒的直径小于100 μm,特别是小于50 μm。这里,该非导电组分以如此细的颗粒引入靶中,以致从宏观看提高了靶的熔点和所需的蒸发焓。此外还应确保,该火花的熔化区域由更低的熔化温度(如铝)所限定。由此小滴散发(Dropletemission)减少。
优选使用铝基质中氧化铝含量小于70体积%的靶。
按另一个优选实施方案,该所用铝靶是粉末冶金靶。
另外,可使用由混入铝中的氧化铝粉末组成的靶。
按另一个可选实施方案,使用借助于全息结构化法制成的靶,其中氧化铝层如此构造,使在氧化铝之间形成的凹穴由铝所充填。
此外,如果所用的靶具有其中引入非导电氮化铝颗粒的铝基质则也是优选的。
在所用靶中,优选存在基本呈第一粒径的氮化铝粒和基本呈第二粒径的铝粒,其中该第一粒径大于该第二粒径,特别是3倍于该第二粒径。
按另一个优选实施方案,该第一粒径约为120 μm,该第二粒径约为40 μm。
本发明还提供一种靶,其可用于通过火花蒸发制备金属氧化物层和/或金属氮化物层,其中该靶具有由金属组成的基质,在基质中引入有该金属的非导电氧化物和/或氮化物。
该非导电氧化物和/或氮化物在基质中的组分优选小于70体积%。
按另一个优选实施方案,该基质由铝组成,其中引入有氧化铝或氮化铝。
下面参阅附图按实施例详述本发明。
图1示意出本发明的待应用的靶的表面,该靶含约120 μm大的氮化铝粒,该氮化的铝粒引入到由小至约三分之一的铝粒所组成的铝周围,如在火花蒸发中所“看到”的火花。
图2示出借助于全息技术所制备的本发明的靶的截面,靶中有规律地分布有氧化铝-岛(阴影线),这些氧化铝-岛引入在铝-十字栅格中(灰色背底)。
图3示意出其中嵌有氮化铝粒的靶的铝基质的截面图。
本发明的实施方式首先示例性地以铝靶来描述。铝是低熔点材料。如要借助于火花蒸发制备氧化铝,则对铝靶在通常待使用的蒸发条件下,铝中毒是严重问题。如前所述,按现有技术不可使用熔点升高的方法,因为氧化铝形成非常好的绝缘体。
在本发明方法中,该靶的氧化铝-颗粒的大小为约50 μm,但优选直径最大为50 μm或不应明显超过该直径,以适配火花直径的典型大小。由于较高的熔点,该氧化铝不溶解,且该氧化铝颗粒是引入整个铝基质中。所以与铝相比,该氧化铝-份数越高,则特别在涂层应用中该靶的熔点就越高。但已表明,在太低的铝浓度下,该靶表面的电导太低,以致不能实行稳定的火花蒸发。因此,在该实施方式中,使用氧化铝份数低于70体积%的靶。
可应用各种方该制备该靶。按第一种实施方式,该制备可借助于已知的粉末冶金法来实现。其中将铝研磨成细粉末和将氧化铝也研磨成细粉末。
按本发明方法,应用全息结构化法制备图2中所描述的靶,其中氧化铝层1经构造成为有规律的栅格形状。然后由此形成的凹穴2由铝充填。该氧化铝优选呈x, y两方向构造,以致形成有规律的氧化铝岛3,并使铝本身可作为在x, y两方向上可导电的十字栅格。
这种表面结构可用几10 nm—几10 μm的栅格间隔呈大面积形成。优选使用的栅格间隔为500 nm—20 μm,特别优选使用的栅格间隔为2 μm。
上面与铝基质和引入于其中的铝氧化物相关所述的方法可应用于任何电绝缘体,只要该绝缘体是引入于导电基质中。这里,术语基质可广义地解释,因为该基质仅应确保其可传导电荷,以致在导电的表面上该火花亮斑总可无阻地移动。
如果要形成含AlN组分的层,则可如上述方法将AlN引入金属基质中。此外可将提高熔点的本发明所述的措施与现有技术已知的措施相组合。例如为借助于火花蒸发制备TiAlN-层,可应用一种将金属Ti、金属Al、导电化合物TiN和绝缘体AlN整合在一起作为组分的靶。
但以此描述还应阐明本发明的另一方面。如本领域技术人员已知的,以氧富集金属铝粒会由于起扩散阻挡作用的氧化皮而变得更困难。
如已知的,即在氮化铝情况下,氮可扩散进铝大于100 nm,即AlN在表面上形成后的穿透足以使更多的氮可扩散进铝的更深的区域。已知这在氧化铝的情况下是不可能的:首先最上面的和大部分仅为几纳米厚的层氧化铝已形成对后续氧的强的扩散阻挡,以致不会发生进一步的更深的氧化。尽管有在光学中铝平面是稳定的事实,但对这里所讨论的相关内容而言,却有不利的后果,即不可形成足够的氧化铝。
为在涂层方法中避免上述问题,为制备优选是氧化性质的含铝层,按一个实施方案,应用一种包含引入于铝基质中的细粒氮化物和含铝-颗粒的靶。该颗粒用于使靶的熔点升高,这对降低导致微颗粒散发的金属的低溶点铝的不可控局部熔化是必需的。如果在火花蒸发过程中补加氧作为工艺气体,则令人意外地发现,基本上形成不含氮的氧化铝层。这可能是AlN发生离解,并且Al与加入的氧发生化合。
相应于本发明的涂层方法,该靶的所需蒸发焓高于该纯金属的蒸发焓,但稍低于组成材料的蒸发烚。
在本发明的说明书中提出可应用其氮化物和/或氧化物是非导电的金属靶来实施火花蒸发,其中该氮化物和/或氧化物可呈细的不导电的颗粒引入该金属的基质4中,并用含这种组成材料的且具有升高熔点的靶可实施火花蒸发,此时如果甚至不可完全避免火花收缩或不稳定的问题,但也可明显减弱这些问题。
Claims (6)
1. 靶的应用,该靶用于火花蒸发涂层法中以制备金属氧化层和/或金属氮化物层,其中,应用一种靶,在该靶中该靶的金属的非导电氧化物和/氮化物引入该靶的金属基质中,且由此该靶可在高于靶中所用金属的熔点的温度下运行。
2. 权利要求1的靶的应用,其中,该靶具有铝基质,其中引入有非导电的氧化铝颗粒和/或氮化铝颗粒。
3. 权利要求2的靶的应用,其中,该氧化铝颗粒基本具有这样的直径,该直径小于典型的火花直径,且由此小于100 μm,优选小于50 μm。
4. 权利要求2或3的靶的应用,其中,铝基质中的氧化铝的份数小于70体积%。
5. 权利要求1—4任一项的靶的应用,其中,该靶是粉末冶金靶。
6. 一种制备适于权利要求2—5任一项应用的靶的方法,其中,该靶借助于全息结构化方法制备,其中将氧化铝层构造成栅格状,并且其中在栅格中形成的凹穴充填有铝。
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EP08014592 | 2008-08-17 | ||
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EP08017715.7 | 2008-10-09 | ||
EP08017715 | 2008-10-09 | ||
PCT/EP2009/005803 WO2010020362A1 (de) | 2008-08-17 | 2009-08-10 | Verwendung eines targets für das funkenverdampfen und verfahren zum herstellen eines für diese verwendung geeigneten targets |
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US (1) | US8828499B2 (zh) |
EP (1) | EP2326742B8 (zh) |
JP (1) | JP5562336B2 (zh) |
KR (1) | KR20110047191A (zh) |
CN (1) | CN102124138A (zh) |
RU (1) | RU2501885C2 (zh) |
WO (1) | WO2010020362A1 (zh) |
Cited By (1)
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CN105986228A (zh) * | 2015-02-10 | 2016-10-05 | 汕头超声显示器技术有限公司 | 一种用于制作氧化铝薄膜的溅射靶材及其制作方法 |
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JP2011084804A (ja) * | 2009-09-18 | 2011-04-28 | Kobelco Kaken:Kk | 金属酸化物−金属複合スパッタリングターゲット |
DE102010042828A1 (de) * | 2010-10-22 | 2012-04-26 | Walter Ag | Target für Lichtbogenverfahren |
DE102010053751A1 (de) * | 2010-10-28 | 2012-05-03 | Oerlikon Trading Ag, Trübbach | Molybdänmonoxidschichten und deren Herstellung mittels PVD |
DE102013006633A1 (de) * | 2013-04-18 | 2014-10-23 | Oerlikon Trading Ag, Trübbach | Funkenverdampfen von metallischen, intermetallischen und keramischen Targetmaterialien um Al-Cr-N Beschichtungen herzustellen |
EP3036353B1 (en) | 2013-08-20 | 2022-01-26 | MDS Coating Technologies Corp. | Coating containing macroparticles and cathodic arc process of making the coating |
RU178867U1 (ru) * | 2016-05-04 | 2018-04-20 | Общество с ограниченной ответственностью Научно-производственное предприятие "НОК" | Вакуумная микроразмерная кристаллизационная ячейка |
WO2018123042A1 (ja) * | 2016-12-28 | 2018-07-05 | 住友電気工業株式会社 | 被膜 |
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GB1595280A (en) * | 1978-05-26 | 1981-08-12 | Hepworth & Grandage Ltd | Composite materials and methods for their production |
JPS58501079A (ja) * | 1981-07-01 | 1983-07-07 | モルテック・アンヴァン・ソシエテ・アノニム | アルミニウムの電解製造 |
US4828008A (en) * | 1987-05-13 | 1989-05-09 | Lanxide Technology Company, Lp | Metal matrix composites |
US5518597A (en) * | 1995-03-28 | 1996-05-21 | Minnesota Mining And Manufacturing Company | Cathodic arc coating apparatus and method |
DE19547305A1 (de) * | 1995-12-18 | 1997-06-19 | Univ Sheffield | Verfahren zum Beschichten von metallischen Substraten |
RU2108212C1 (ru) * | 1996-02-19 | 1998-04-10 | Юрий Львович Чистяков | Способ электроискрового нанесения покрытий |
US20020139662A1 (en) * | 2001-02-21 | 2002-10-03 | Lee Brent W. | Thin-film deposition of low conductivity targets using cathodic ARC plasma process |
DE102005021927A1 (de) * | 2005-05-12 | 2006-11-16 | Fette Gmbh | Legierter Körper als Target für das PVD-Verfahren, Verfahren zur Herstellung des legierten Körpers und PVD-Verfahren mit dem legierten Körper |
JP4846519B2 (ja) * | 2006-10-23 | 2011-12-28 | 日立ツール株式会社 | 窒化物含有ターゲット材 |
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2009
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CN105986228A (zh) * | 2015-02-10 | 2016-10-05 | 汕头超声显示器技术有限公司 | 一种用于制作氧化铝薄膜的溅射靶材及其制作方法 |
CN105986228B (zh) * | 2015-02-10 | 2018-11-06 | 汕头超声显示器技术有限公司 | 一种用于制作氧化铝薄膜的溅射靶材及其制作方法 |
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EP2326742A1 (de) | 2011-06-01 |
JP5562336B2 (ja) | 2014-07-30 |
US8828499B2 (en) | 2014-09-09 |
RU2501885C2 (ru) | 2013-12-20 |
EP2326742B8 (de) | 2018-12-26 |
EP2326742B1 (de) | 2018-11-07 |
RU2011110043A (ru) | 2012-09-27 |
WO2010020362A1 (de) | 2010-02-25 |
KR20110047191A (ko) | 2011-05-06 |
US20110143054A1 (en) | 2011-06-16 |
JP2012500331A (ja) | 2012-01-05 |
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