CN102122631A - 获得空气间隙沟槽的方法 - Google Patents
获得空气间隙沟槽的方法 Download PDFInfo
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- CN102122631A CN102122631A CN2010100272385A CN201010027238A CN102122631A CN 102122631 A CN102122631 A CN 102122631A CN 2010100272385 A CN2010100272385 A CN 2010100272385A CN 201010027238 A CN201010027238 A CN 201010027238A CN 102122631 A CN102122631 A CN 102122631A
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Application Number | Priority Date | Filing Date | Title |
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CN2010100272385A CN102122631A (zh) | 2010-01-08 | 2010-01-08 | 获得空气间隙沟槽的方法 |
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CN2010100272385A CN102122631A (zh) | 2010-01-08 | 2010-01-08 | 获得空气间隙沟槽的方法 |
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CN102122631A true CN102122631A (zh) | 2011-07-13 |
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CN2010100272385A Pending CN102122631A (zh) | 2010-01-08 | 2010-01-08 | 获得空气间隙沟槽的方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077958A (zh) * | 2011-10-25 | 2013-05-01 | 上海华虹Nec电子有限公司 | 带空气间隙结构的半导体功率器件及其制造方法 |
CN112750753A (zh) * | 2019-10-29 | 2021-05-04 | 长鑫存储技术有限公司 | 半导体器件及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI293198B (en) * | 2006-03-10 | 2008-02-01 | Promos Technologies Inc | Method of fabricating semiconductor device |
US7514337B2 (en) * | 2005-08-11 | 2009-04-07 | Dongbu Electronics Co., Ltd. | Semiconductor device using EPI-layer and method of forming the same |
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2010
- 2010-01-08 CN CN2010100272385A patent/CN102122631A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7514337B2 (en) * | 2005-08-11 | 2009-04-07 | Dongbu Electronics Co., Ltd. | Semiconductor device using EPI-layer and method of forming the same |
TWI293198B (en) * | 2006-03-10 | 2008-02-01 | Promos Technologies Inc | Method of fabricating semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077958A (zh) * | 2011-10-25 | 2013-05-01 | 上海华虹Nec电子有限公司 | 带空气间隙结构的半导体功率器件及其制造方法 |
CN112750753A (zh) * | 2019-10-29 | 2021-05-04 | 长鑫存储技术有限公司 | 半导体器件及其制作方法 |
CN112750753B (zh) * | 2019-10-29 | 2022-06-03 | 长鑫存储技术有限公司 | 半导体器件及其制作方法 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140110 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140110 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110713 |