CN102119363B - 用于光刻的高深宽比模板、制作相同模板的方法、以及这种模板在纳米级基板射孔中的应用 - Google Patents

用于光刻的高深宽比模板、制作相同模板的方法、以及这种模板在纳米级基板射孔中的应用 Download PDF

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Publication number
CN102119363B
CN102119363B CN200980131624.4A CN200980131624A CN102119363B CN 102119363 B CN102119363 B CN 102119363B CN 200980131624 A CN200980131624 A CN 200980131624A CN 102119363 B CN102119363 B CN 102119363B
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China
Prior art keywords
template
nanostructures
silicon wafer
substrate
nanostructure
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Expired - Fee Related
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CN200980131624.4A
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English (en)
Chinese (zh)
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CN102119363A (zh
Inventor
阿明·萨利姆·穆罕默德
大卫·布鲁德
乔纳斯·贝尔格
穆罕默德·沙菲奎尔·卡比尔
文森特·代马雷
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Smoltek AB
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Smoltek AB
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0027—Devices or apparatus characterised by pressure means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Catalysts (AREA)
CN200980131624.4A 2008-08-05 2009-07-23 用于光刻的高深宽比模板、制作相同模板的方法、以及这种模板在纳米级基板射孔中的应用 Expired - Fee Related CN102119363B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0801770 2008-08-05
SE0801770-9 2008-08-05
PCT/EP2009/005340 WO2010015333A2 (en) 2008-08-05 2009-07-23 Template and method of making high aspect ratio template for lithography and use of the template for perforating a substrate at nanoscale

Publications (2)

Publication Number Publication Date
CN102119363A CN102119363A (zh) 2011-07-06
CN102119363B true CN102119363B (zh) 2015-10-21

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CN200980131624.4A Expired - Fee Related CN102119363B (zh) 2008-08-05 2009-07-23 用于光刻的高深宽比模板、制作相同模板的方法、以及这种模板在纳米级基板射孔中的应用

Country Status (7)

Country Link
US (1) US9028242B2 (https=)
EP (1) EP2307928A2 (https=)
JP (1) JP5405574B2 (https=)
KR (1) KR20110055586A (https=)
CN (1) CN102119363B (https=)
MY (1) MY153444A (https=)
WO (1) WO2010015333A2 (https=)

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CN107175939B (zh) * 2016-03-09 2020-02-28 华邦电子股份有限公司 用于印刷线路制程的印章及其制造方法以及印刷线路制程
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US11261085B2 (en) 2017-05-03 2022-03-01 Nanotech Security Corp. Methods for micro and nano fabrication by selective template removal
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KR102267904B1 (ko) * 2020-04-01 2021-06-22 한국기계연구원 유리전이온도를 이용한 미세구조체 전사방법 및 이를 이용하여 제작된 미세구조체 소자
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KR102889959B1 (ko) * 2024-01-31 2025-11-24 동국대학교 산학협력단 희생층이 도입된 탐침 기반 리소그래피 방법, 금속 나노 홀 구조체, 하이브리드 플라즈모닉 구조체 제조 방법 및 하이브리드 플라즈모닉 구조체

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Also Published As

Publication number Publication date
CN102119363A (zh) 2011-07-06
WO2010015333A2 (en) 2010-02-11
US20110195141A1 (en) 2011-08-11
JP2011530803A (ja) 2011-12-22
KR20110055586A (ko) 2011-05-25
JP5405574B2 (ja) 2014-02-05
EP2307928A2 (en) 2011-04-13
US9028242B2 (en) 2015-05-12
MY153444A (en) 2015-02-13
WO2010015333A3 (en) 2010-05-27

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