KR20110055586A - 템플레이트 및 리소그래피용 고종횡비 템플레이트의 제조방법과 나노스케일로 기판을 천공하기 위한 템플레이트의 용도 - Google Patents

템플레이트 및 리소그래피용 고종횡비 템플레이트의 제조방법과 나노스케일로 기판을 천공하기 위한 템플레이트의 용도 Download PDF

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Publication number
KR20110055586A
KR20110055586A KR20117004711A KR20117004711A KR20110055586A KR 20110055586 A KR20110055586 A KR 20110055586A KR 20117004711 A KR20117004711 A KR 20117004711A KR 20117004711 A KR20117004711 A KR 20117004711A KR 20110055586 A KR20110055586 A KR 20110055586A
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KR
South Korea
Prior art keywords
template
nanostructure
base plate
lithographic
aspect ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20117004711A
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English (en)
Korean (ko)
Inventor
아민 살림 무하마드
다비드 브루드
요나스 베리
모하마드 샤피쿨 카비르
뱅상 디마리
Original Assignee
스몰텍 에이비
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스몰텍 에이비 filed Critical 스몰텍 에이비
Publication of KR20110055586A publication Critical patent/KR20110055586A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0027—Devices or apparatus characterised by pressure means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Catalysts (AREA)
KR20117004711A 2008-08-05 2009-07-23 템플레이트 및 리소그래피용 고종횡비 템플레이트의 제조방법과 나노스케일로 기판을 천공하기 위한 템플레이트의 용도 Ceased KR20110055586A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0801770-9 2008-08-05
SE0801770 2008-08-05

Publications (1)

Publication Number Publication Date
KR20110055586A true KR20110055586A (ko) 2011-05-25

Family

ID=41226229

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20117004711A Ceased KR20110055586A (ko) 2008-08-05 2009-07-23 템플레이트 및 리소그래피용 고종횡비 템플레이트의 제조방법과 나노스케일로 기판을 천공하기 위한 템플레이트의 용도

Country Status (7)

Country Link
US (1) US9028242B2 (https=)
EP (1) EP2307928A2 (https=)
JP (1) JP5405574B2 (https=)
KR (1) KR20110055586A (https=)
CN (1) CN102119363B (https=)
MY (1) MY153444A (https=)
WO (1) WO2010015333A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102267904B1 (ko) * 2020-04-01 2021-06-22 한국기계연구원 유리전이온도를 이용한 미세구조체 전사방법 및 이를 이용하여 제작된 미세구조체 소자
KR20250119165A (ko) * 2024-01-31 2025-08-07 동국대학교 산학협력단 희생층이 도입된 탐침 기반 리소그래피 방법, 금속 나노 홀 구조체, 하이브리드 플라즈모닉 구조체 제조 방법 및 하이브리드 플라즈모닉 구조체

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KR102267904B1 (ko) * 2020-04-01 2021-06-22 한국기계연구원 유리전이온도를 이용한 미세구조체 전사방법 및 이를 이용하여 제작된 미세구조체 소자
KR20250119165A (ko) * 2024-01-31 2025-08-07 동국대학교 산학협력단 희생층이 도입된 탐침 기반 리소그래피 방법, 금속 나노 홀 구조체, 하이브리드 플라즈모닉 구조체 제조 방법 및 하이브리드 플라즈모닉 구조체

Also Published As

Publication number Publication date
US20110195141A1 (en) 2011-08-11
CN102119363B (zh) 2015-10-21
WO2010015333A3 (en) 2010-05-27
CN102119363A (zh) 2011-07-06
MY153444A (en) 2015-02-13
WO2010015333A2 (en) 2010-02-11
JP5405574B2 (ja) 2014-02-05
EP2307928A2 (en) 2011-04-13
JP2011530803A (ja) 2011-12-22
US9028242B2 (en) 2015-05-12

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