CN102117806B - Duodiode integrating Zener diode with rectifying diode and production method thereof - Google Patents
Duodiode integrating Zener diode with rectifying diode and production method thereof Download PDFInfo
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- CN102117806B CN102117806B CN2010105893955A CN201010589395A CN102117806B CN 102117806 B CN102117806 B CN 102117806B CN 2010105893955 A CN2010105893955 A CN 2010105893955A CN 201010589395 A CN201010589395 A CN 201010589395A CN 102117806 B CN102117806 B CN 102117806B
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Abstract
The invention discloses a duodiode integrating a Zener diode with a rectifying diode and a production method thereof. The production method comprises the following steps: (1) growing an N-type silicon epitaxial layer on an N<+> type semiconductor heavy doping silicon single crystal polishing substrate slice; (2) cleaning N<+>N<-> silicon epitaxial wafer with chemical cleaning No.1 liquid and flushing with purified water; cleaning the silicon slice with cleaning No.2 liquid and spinning-dry the silicon slice; (3) pre-diffusing P<+> type semiconductor impurity boron on the cleaned N<+>N<-> silicon epitaxial wafer; (4) pushing knot and diffusing the P<+> type impurity by using a P<+>N<+>N<->P<+> duodiode pre-diffusing slice; (5) carrying out sand blasting and roughening on dual surfaces of the P<+>N<+>N<->P<+> duodiode pre-diffusing slice, plating nickel layers on the dual surfaces and sawing the slice into duodiode chips; (6) welding the duodiode chip onto an encapsulation base through a continuous tunnel furnace; and (7) carrying out chemical corrosion cleaning by adopting a mixed acid liquid,, protecting gun dispensing, mould pressing, forming and packaging on the exposed parts ofthe chips on a duodiode blank. According to the invention, the production process flow of the silicon diode is simplified, the cost is reduced and the cost performance of products is improved.
Description
Technical field
The present invention relates to double diode of a kind of integrated zener and rectifying tube and preparation method thereof.
Background technology
The fast development of semiconductor technology, the specification of surface-mounted integrated circuit are more and more smart, and this just requires the components and parts on the circuit board more and more to become more meticulous, and is integrated.And economizing on resources becomes the operation of every profession and trade originally, and enforcement of the present invention can reduce diode metal lead wire consumption and domain space.
The double diode of this integrated zener and rectifying tube is mainly used in the integrated circuit that protection has power inductance.For example the inductance of transformer can produce transient peak voltage in the flyback converter in the voltage transitions process, in order to protect entire circuit, need carry out the clamper restriction to this voltage.Normal RC damping circuit and the RCD damping circuit of adopting carries out the clamper restriction in the traditional circuit, and the designer also can adopt voltage stabilizing didoe to come protective circuit.RC damping circuit and RCD damping circuit performance are more stable, eliminate the electromotive force concussion that inductance produces, the self induction electromotive force of coming absorption inductor through diode through the damping circuit of electric capacity and resistance.But to use a resistance, an electric capacity and a diode usually, for realizing a kind of function, need to place a plurality of components and parts on the printed circuit board (PCB) like this.The use of voltage stabilizing didoe can reduce the number of discrete device, but still needs a rectifier diode differential concatenation to suppress the forward voltage of circuit.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, the two of a kind of integrated zener and rectifying tube are provided
Diode and preparation method thereof.
The double diode of integrated zener and rectifying tube is: the silicon double diode of integrated Zener diode and rectifier diode on single-chip, and its device vertical structure is P+N+N-P+, and wherein, P+N+ is a Zener diode, and P+N-is a rectifier diode.
The preparation method's of the double diode of integrated zener and rectifying tube step is following:
1) growth N-type silicon epitaxy layer on N+ N-type semiconductor N heavily doped silicon polished substrate sheet; Obtain the N+N-silicon epitaxial wafer; The resistivity of N+ N-type semiconductor N heavily doped silicon polished substrate sheet is 0.05～1.0 Ω .cm; Thickness is that 250～350u. N-type silicon epitaxy layer resistivity is 45～70 Ω .cm, and thickness is 100～110um;
2) clean the N+N-silicon epitaxial wafer with electronics chemical cleaning 1# liquid, through pure water rinsing; Use electronics chemical cleaning 2# liquid cleaning silicon chip again, cleaning temperature is 80～85 ℃, and scavenging period is 10～15 minutes, silicon chip is dried, and pure water water outlet resistivity 10～12 Ω .cm, the volume ratio that electron chemistry cleans 1# liquid is: NH
4OH:H
2O
2: H
2O=1:2:5, the volume ratio that electron chemistry cleans 2# liquid is: HCL:H
2O
2: H
2O=1:2:8.
3) on the N+N-silicon epitaxial wafer after the cleaning, carry out the prediffusion of P+ N-type semiconductor N boron impurities, 1100～1200 ℃ of prediffusion temperature, obtain P+N+N-P+ double diode prediffusion sheet at 1～2 hour prediffusion time;
4) P+N+N-P+ double diode prediffusion sheet carries out 5～10 hours P+ impurity knot diffusion under 1200～1300 ℃ of temperature, obtains P+N+N-P+ double diode diffusion sheet;
5) the two surface sand-blasting hackings of P+N+N-P+ double diode diffusion sheet, two surfaces plate nickel dam, and sawing becomes the double diode chip;
6) through continuous tunnel furnace double diode chip and encapsulation base plate are welded, obtain the double diode blank;
7) with mix acid liquor to the chip exposed parts on the double diode blank carry out chemical corrosion clean, on protect glue, moulded section encapsulation, process the double diode of zener and rectifying tube; The volume ratio of mix acid liquor is: HF:HNO
3: H
2SO
4: CH
3COOH=9:9:4:12.
The present invention is integrated into same chip with Zener diode and rectifier diode, reduces the diode metal pins, reduces taking up room of circuit board; Utilize open knot prepared, it is simple to have technology, the characteristics that cost is low.
Description of drawings
Fig. 1 is the structural representation of the double diode of integrated zener and rectifying tube;
Fig. 2 is preparation method's flow process of the double diode of integrated zener and rectifying tube;
Fig. 3 is the Impurity Distribution analogous diagram of the double diode of integrated zener and rectifying tube;
Fig. 4 is the electrical analogous diagram of rectifying tube reverse breakdown of the double diode of integrated zener and rectifying tube;
Fig. 5 is the electrical analogous diagram of zener reverse breakdown of the double diode of integrated zener and rectifying tube.
Embodiment
The double diode of integrated zener and rectifying tube is: the silicon double diode of integrated Zener diode and rectifier diode on single-chip, and its device vertical structure is P+N+N-P+, and wherein, P+N+ is a Zener diode, and P+N-is a rectifier diode.
The preparation method's of the double diode of integrated zener and rectifying tube step is following:
1) growth N-type silicon epitaxy layer on N+ N-type semiconductor N heavily doped silicon polished substrate sheet; Obtain the N+N-silicon epitaxial wafer; The resistivity of N+ N-type semiconductor N heavily doped silicon polished substrate sheet is 0.05～1.0 Ω .cm; Thickness is that 250～350u. N-type silicon epitaxy layer resistivity is 45～70 Ω .cm, and thickness is 100～110um;
2) clean the N+N-silicon epitaxial wafer with electronics chemical cleaning 1# liquid, through pure water rinsing; Use electronics chemical cleaning 2# liquid cleaning silicon chip again, cleaning temperature is 80～85 ℃, and scavenging period is 10～15 minutes, silicon chip is dried, and pure water water outlet resistivity 10～12 Ω .cm, the volume ratio that electron chemistry cleans 1# liquid is: NH
4OH:H
2O
2: H
2O=1:2:5, the volume ratio that electron chemistry cleans 2# liquid is: HCL:H
2O
2: H
2O=1:2:8.
3) on the N+N-silicon epitaxial wafer after the cleaning, carry out the prediffusion of P+ N-type semiconductor N boron impurities, 1100～1200 ℃ of prediffusion temperature, obtain P+N+N-P+ double diode prediffusion sheet at 1～2 hour prediffusion time;
4) P+N+N-P+ double diode prediffusion sheet carries out 5～10 hours P+ impurity knot diffusion under 1200～1300 ℃ of temperature, obtains P+N+N-P+ double diode diffusion sheet;
5) the two surface sand-blasting hackings of P+N+N-P+ double diode diffusion sheet, two surfaces plate nickel dam, and sawing becomes the double diode chip;
6) through continuous tunnel furnace double diode chip and encapsulation base plate are welded, obtain the double diode blank;
7) with mix acid liquor to the chip exposed parts on the double diode blank carry out chemical corrosion clean, on protect glue, moulded section encapsulation, process the double diode of zener and rectifying tube; The volume ratio of mix acid liquor is: HF:HNO
3: H
2SO
4: CH
3COOH=9:9:4:12.
Embodiment 1
1) growth N-type silicon epitaxy layer on N+ N-type semiconductor N heavily doped silicon polished substrate sheet; Obtain the N+N-silicon epitaxial wafer; The resistivity of N+ N-type semiconductor N heavily doped silicon polished substrate sheet is 0.05 Ω .cm, and thickness is that 250u. N-type silicon epitaxy layer resistivity is 70 Ω .cm, and thickness is 110um;
2) clean the N+N-silicon epitaxial wafer with electronics chemical cleaning 1# liquid, through pure water rinsing; Use electronics chemical cleaning 2# liquid cleaning silicon chip again, cleaning temperature is 80～85 ℃, and scavenging period is 10～15 minutes, silicon chip is dried, and pure water water outlet resistivity 10～12 Ω .cm, the volume ratio that electron chemistry cleans 1# liquid is: NH
4OH:H
2O
2: H
2O=1:2:5, the volume ratio that electron chemistry cleans 2# liquid is: HCL:H
2O
2: H
2O=1:2:8.
3) on the N+N-silicon epitaxial wafer after the cleaning, carry out the prediffusion of P+ N-type semiconductor N boron impurities, 1100 ℃ of prediffusion temperature, obtain P+N+N-P+ double diode prediffusion sheet at 2 hours prediffusion time;
4) P+N+N-P+ double diode prediffusion sheet carries out 10 hours P+ impurity knot diffusion under 1200 ℃ of temperature, obtains P+N+N-P+ double diode diffusion sheet;
5) the two surface sand-blasting hackings of P+N+N-P+ double diode diffusion sheet, two surfaces plate nickel dam, and sawing becomes the double diode chip;
6) through continuous tunnel furnace double diode chip and encapsulation base plate are welded, obtain the double diode blank;
7) with mix acid liquor to the chip exposed parts on the double diode blank carry out chemical corrosion clean, on protect glue, moulded section encapsulation, process the double diode of zener and rectifying tube; The volume ratio of mix acid liquor is: HF:HNO
3: H
2SO
4: CH
3COOH=9:9:4:12.
Embodiment 2
1) growth N-type silicon epitaxy layer on N+ N-type semiconductor N heavily doped silicon polished substrate sheet; Obtain the N+N-silicon epitaxial wafer; The resistivity of N+ N-type semiconductor N heavily doped silicon polished substrate sheet is 0.07 Ω .cm, and thickness is that 300u. N-type silicon epitaxy layer resistivity is 60 Ω .cm, and thickness is 105um;
2) clean the N+N-silicon epitaxial wafer with electronics chemical cleaning 1# liquid, through pure water rinsing; Use electronics chemical cleaning 2# liquid cleaning silicon chip again, cleaning temperature is 80～85 ℃, and scavenging period is 10～15 minutes, silicon chip is dried, and pure water water outlet resistivity 10～12 Ω .cm, the volume ratio that electron chemistry cleans 1# liquid is: NH
4OH:H
2O
2: H
2O=1:2:5, the volume ratio that electron chemistry cleans 2# liquid is: HCL:H
2O
2: H
2O=1:2:8.
3) on the N+N-silicon epitaxial wafer after the cleaning, carry out the prediffusion of P+ N-type semiconductor N boron impurities, 1200 ℃ of prediffusion temperature, obtain P+N+N-P+ double diode prediffusion sheet at 1 hour prediffusion time;
4) P+N+N-P+ double diode prediffusion sheet carries out 5 hours P+ impurity knot diffusion under 1300 ℃ of temperature, obtains P+N+N-P+ double diode diffusion sheet;
5) the two surface sand-blasting hackings of P+N+N-P+ double diode diffusion sheet, two surfaces plate nickel dam, and sawing becomes the double diode chip;
6) through continuous tunnel furnace double diode chip and encapsulation base plate are welded, obtain the double diode blank;
7) with mix acid liquor to the chip exposed parts on the double diode blank carry out chemical corrosion clean, on protect glue, moulded section encapsulation, process the double diode of zener and rectifying tube; The volume ratio of mix acid liquor is: HF:HNO
3: H
2SO
4: CH
3COOH=9:9:4:12.
Embodiment 3
1) growth N-type silicon epitaxy layer on N+ N-type semiconductor N heavily doped silicon polished substrate sheet; Obtain the N+N-silicon epitaxial wafer; The resistivity of N+ N-type semiconductor N heavily doped silicon polished substrate sheet is 1.0 Ω .cm, and thickness is that 350u. N-type silicon epitaxy layer resistivity is 45 Ω .cm, and thickness is 100um;
2) clean the N+N-silicon epitaxial wafer with electronics chemical cleaning 1# liquid, through pure water rinsing; Use electronics chemical cleaning 2# liquid cleaning silicon chip again, cleaning temperature is 80～85 ℃, and scavenging period is 10～15 minutes, silicon chip is dried, and pure water water outlet resistivity 10～12 Ω .cm, the volume ratio that electron chemistry cleans 1# liquid is: NH
4OH:H
2O
2: H
2O=1:2:5, the volume ratio that electron chemistry cleans 2# liquid is: HCL:H
2O
2: H
2O=1:2:8.
3) on the N+N-silicon epitaxial wafer after the cleaning, carry out the prediffusion of P+ N-type semiconductor N boron impurities, 1150 ℃ of prediffusion temperature, obtain P+N+N-P+ double diode prediffusion sheet at 2 hours prediffusion time;
4) P+N+N-P+ double diode prediffusion sheet carries out 8 hours P+ impurity knot diffusion under 1250 ℃ of temperature, obtains P+N+N-P+ double diode diffusion sheet;
5) the two surface sand-blasting hackings of P+N+N-P+ double diode diffusion sheet, two surfaces plate nickel dam, and sawing becomes the double diode chip;
6) through continuous tunnel furnace double diode chip and encapsulation base plate are welded, obtain the double diode blank;
7) with mix acid liquor to the chip exposed parts on the double diode blank carry out chemical corrosion clean, on protect glue, moulded section encapsulation, process the double diode of zener and rectifying tube; The volume ratio of mix acid liquor is: HF:HNO
3: H
2SO
4: CH
3COOH=9:9:4:12.
Claims (1)
1. the preparation method of the double diode of integrated zener and rectifying tube is characterized in that its step is following:
1) growth N-type silicon epitaxy layer on N+ N-type semiconductor N heavily doped silicon polished substrate sheet; Obtain the N+N-silicon epitaxial wafer; The resistivity of N+ N-type semiconductor N heavily doped silicon polished substrate sheet is 0.05～1.0 Ω .cm; Thickness is 250～350um, and N-type silicon epitaxy layer resistivity is 45～70 Ω .cm, and thickness is 100～110um;
2) clean the N+N-silicon epitaxial wafer with electronics chemical cleaning 1# liquid, through pure water rinsing; Use electronics chemical cleaning 2# liquid cleaning silicon chip again, cleaning temperature is 80～85 ℃, and scavenging period is 10～15 minutes, silicon chip is dried, and pure water water outlet resistivity 10～12 Ω .cm, the volume ratio that electron chemistry cleans 1# liquid is: NH
4OH: H
2O
2: H
2O=1: 2: 5, the volume ratio that electron chemistry cleans 2# liquid was: HCL: H
2O
2: H
2O=1: 2: 8;
3) on the N+N-silicon epitaxial wafer after the cleaning, carry out the prediffusion of P+ N-type semiconductor N boron impurities, 1100～1200 ℃ of prediffusion temperature, obtain P+N+N-P+ double diode prediffusion sheet at 1～2 hour prediffusion time;
4) P+N+N-P+ double diode prediffusion sheet carries out 5～10 hours P+ impurity knot diffusion under 1200～1300 ℃ of temperature, obtains P+N+N-P+ double diode diffusion sheet;
5) the two surface sand-blasting hackings of P+N+N-P+ double diode diffusion sheet, two surfaces plate nickel dam, and sawing becomes the double diode chip;
6) through continuous tunnel furnace double diode chip and encapsulation base plate are welded, obtain the double diode blank;
7) with mix acid liquor to the chip exposed parts on the double diode blank carry out chemical corrosion clean, on protect glue, moulded section encapsulation, process the double diode of zener and rectifying tube; The volume ratio of mix acid liquor is: HF: HNO
3: H
2SO
4: CH
3COOH=9: 9: 4: 12;
The double diode of described zener and rectifying tube is the silicon double diode of integrated Zener diode and rectifier diode on single-chip, and its device vertical structure is P+N+N-P+, and wherein, P+N+ is a Zener diode, and P+N-is a rectifier diode.
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|---|---|---|---|
| CN2010105893955A CN102117806B (en) | 2010-12-15 | 2010-12-15 | Duodiode integrating Zener diode with rectifying diode and production method thereof |
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| CN102117806B true CN102117806B (en) | 2012-07-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399201A (en) * | 2008-11-13 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon bidirectional trigger diode |
| CN101399200A (en) * | 2008-11-06 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode PN junction by same diffusion process of P and N paper sources |
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| FR2598043A1 (en) * | 1986-04-25 | 1987-10-30 | Thomson Csf | SEMICONDUCTOR COMPONENT FOR OVERVOLTAGE AND OVERCURRENT PROTECTION |
| US8431958B2 (en) * | 2006-11-16 | 2013-04-30 | Alpha And Omega Semiconductor Ltd | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
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| CN101399200A (en) * | 2008-11-06 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode PN junction by same diffusion process of P and N paper sources |
| CN101399201A (en) * | 2008-11-13 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon bidirectional trigger diode |
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