CN101399201A - Method for manufacturing silicon bidirectional trigger diode - Google Patents
Method for manufacturing silicon bidirectional trigger diode Download PDFInfo
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- CN101399201A CN101399201A CNA2008101222371A CN200810122237A CN101399201A CN 101399201 A CN101399201 A CN 101399201A CN A2008101222371 A CNA2008101222371 A CN A2008101222371A CN 200810122237 A CN200810122237 A CN 200810122237A CN 101399201 A CN101399201 A CN 101399201A
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Abstract
The invention discloses a method for manufacturing a silicon bilateral trigger diode, comprising the following steps: 1) P+ type semiconductor impurity diffusion is completed on the front side and the reverse side of an N- type silicon single crystal sheet at the same time, so that P+/N-/P+ structure is obtained; 2) the front surface and the reverse surface of the silicon chip with the P+/N-/P+ structure are ground; 3) a nickel layer is plated on the front surface and the reverse surface of the silicon chip with the P+/N-/P+ structure; 4) the silicon chip with the P+/N-/P+ structure is cut into a diode chip by a saw; 5) the diode chip is welded with a packaging socket by a continuous tunnel furnace; 6) a vertical table-board of the diode is cleaned by acid corrosion, surface passivation is carried out on a PN knot which is then molded with die to be prepared into the silicon bilateral trigger diode. The method adopts the silicon single crystal grinding sheets to replace a silicon extending slice and takes the silicon single crystal grinding sheets as the substrate material for manufacturing the silicon bilateral trigger diode with the PN knot having the vertical table-board, thus simplifying the manufacturing process flow of the silicon bilateral trigger diode, shortening the production period, reducing the cost and improving the cost performance of products.
Description
Technical field
The present invention relates to the manufacture method of semiconductor device, relate in particular to a kind of manufacture method of silicon bidirectional trigger diode.
Background technology
Silicon bidirectional trigger diode is the important electron device.What current silicon transistor manufacturing was generally adopted is semiconductor planar technology, promptly behind growing silicon oxide film on the silicon chip, leaves the silicon oxide film window with photoetching method, carries out P, the N type semiconductor impurity fixed zone diffusion under silicon oxide film is sheltered then, makes PN junction.This PN junction is in the silicon oxide film protection down, realizes low reverse current leakage.Play a part the PN junction surface passivation at this silicon oxide film again as dielectric.
People have done many improvement to device architecture and manufacturing process for a long time, the manufacture method of the silicon bidirectional trigger diode that the present invention proposes, just will will carry out the way of welded encapsulation after the PN junction surface passivation more earlier in the common diode core manufacturing, changing into goes ahead of the rest diode chip carries out the technological process of PN junction surface passivation after the welded encapsulation again.The new method of this manufacturing semiconductor device, people are referred to as vertical table-board diode technology.The diode that adopts this technology to make is called as the vertical table-board diode.In vertical table-board diode manufacturing process flow process, it is exposed to outer PN junction and by the automatic saw blade machine silicon chip sawing is formed, and PN junction all around is perpendicular to chip surface.Because no any dielectric layer applies protection to PN junction, be in opening mode and be exposed to extraneous PN junction, must through with the encapsulation base plate welding, carry out chemical corrosion and clean to form vertical table-board, cover again and go up the silica gel that insulate.So far finish the surface passivation of PN junction.
Summary of the invention
The objective of the invention is to overcome the deficiency of the market competitiveness of prior art aspect low value-added product, a kind of manufacture method of silicon bidirectional trigger diode is provided.
The manufacture method of silicon bidirectional trigger diode comprises the steps:
1) on positive and negative two faces of N-type silicon single crystal flake, finishes P+ N-type semiconductor N diffusion of impurities simultaneously, obtain the P+/N-/P+ structure;
2) positive and negative two surfaces of grinding P+/N-/P+ structure silicon chip;
3) plate nickel dam on positive and negative two surfaces of P+/N-/P+ structure silicon chip;
4) the silicon chip sawing with the P+/N-/P+ structure becomes diode chip for backlight unit;
5) by continuous tunnel furnace diode chip for backlight unit and encapsulation base plate are welded;
6) acid corrosion of carrying out the diode vertical table-board is cleaned, the surface passivation of PN junction, and silicon bidirectional trigger diode is made in moulded section.
The resistivity of described N-type silicon single crystal flake is 0.03～0.05 Ω cm.Grind and be mechanical lapping or emery wheel attenuate.P+ N-type semiconductor N impurity is boron.Sawing become diode chip for backlight unit around PN junction present mesa shape perpendicular to chip surface.The acid corrosion cleaning and the surface passivation of PN junction are all carried out on the vertical table-board of diode.
The present invention shelters the transistor planar technology of lower area diffusion semiconductor impurities usually at oxide-film, replace the diffusion of finishing P type semiconductor impurity on the whole silicon wafer surface with the time once, makes the silicon bidirectional trigger diode technology of vertical table-board PN junction.Use this inventive method, adopt the silicon single crystal abrasive sheet to replace silicon epitaxial wafer, can simplify the manufacturing process flow of silicon rectifier diode, shorten the production cycle, reduce cost, improve the product price ratio as the substrate material of making bidirectional trigger diode.
Description of drawings
Fig. 1 is the process chart of a kind of silicon bidirectional trigger diode manufacture method of the present invention;
Fig. 2 is the process chart that the conventional transistor planar technique is made silicon diode.
Embodiment
The important unit for electrical property parameters of silicon bidirectional trigger diode comprises reverse breakdown voltage V
ROWith forward voltage drop V
FV wherein
ROThe silicon chip that requires to make diode has definite resistivity and thickness.High V
RORequire the N-silicon chip to guarantee its thickness, but V
FThen require the N-silicon chip thin as far as possible, otherwise because of V
FExceed standard and cause product defective.The conventional planar technology of accompanying drawing 2 just selects for use N-/N+ type silicon epitaxial material to make diode.Wherein N-is low-doped silicon epitaxy layer, and it is to grow by the mode of silicon epitaxy to form on original N+ type silicon single crystal burnishing surface.And the N+ layer is heavily doped low-resistance silicon monocrystalline substrate part, the critical function of this N+ layer is in order to increase the silicon chip gross thickness, it had both played the effect that prevents to take place the silicon chip fragmentation in the process of making device, made that again the desired low forward voltage drop performance index of device are easy to realize.In the silicon bidirectional trigger diode manufacturing process proposed by the invention shown in the accompanying drawing 1, the two-way P+/N-structure in its top and bottom forms in same diffusion process.The step of taking is: stick the boron paper source of P type respectively on two surfaces of N-type silicon single crystal flake, the disposable P+/N-/P+ structure that diffuses to form.Surface by grinding silicon chip, and plate nickel dam on the surface of silicon chip, again the silicon chip sawing is become diode chip for backlight unit, will diode chip for backlight unit and the encapsulation base plate welding after carry out the acid corrosion cleaning of PN junction vertical table-board and the surface passivation of PN junction, pass through moulded section then, make silicon bidirectional trigger diode.
Embodiment: the manufacture method according to following a kind of silicon bidirectional trigger diode is produced silicon bidirectional trigger diode:
Choose 0.03～0.05 Ω cm, thickness is the N type silicon single crystal abrasive sheet of 200-220 μ m.
1) cleaning silicon chip at first: adopt chemical electronics cleaning fluid (NH No. 1
4OH:H
2O
2: H
2O=1:2:5) and No. 2 chemical electronics cleaning fluid (HCL:H
2O
2: H
2O=1:2:8) the strict cleaning.The cleaning reaction temperature of chemistry electronics cleaning fluid is 80-85 ℃, and the reaction time is 10 minutes.Then silicon chip is placed pure water cleaning down cleaning.Pure water resistivity 〉=15 megohms centimetre, time 〉=30 minute of at every turn washing by water.Silicon chip cleans the back and dries, or 120 ℃ drying in oven, stoving time 〉=30 minute.Then spread: as diffuse source, press a boron paper, a slice silicon chip, the sequence interval arrangement of a boron paper again with boron paper.The silicon chip that sequences is placed in the quartz boat, pushes diffusion furnace, temperature is risen to 1265 ℃, under the protection of nitrogen, oxygen, carry out 20～30 hours diffusion.Diffusion is pulled out diffusion furnace with quartz boat after finishing, and silicon chip is immersed in the hydrofluoric acid solution to remove the Pyrex layer of silicon chip surface.Wash away the hydrofluoric acid and the oven dry of silicon chip surface with pure water.
2) then silicon chip is carried out two surface grindings or sandblast attenuate.Silicon chip after grinding or sandblast is ultrasonic in pure water, remove the diamond dust on clean surface, boil No. 1 chemical electronics cleaning fluid, No. 2 chemical electronics cleaning fluids each 10 minutes again and carry out the ultrasonic cleaning of multiple tracks pure water, pure water resistivity 〉=15 megohms centimetre, the per pass pure water ultrasonic cleaning time is 20～30 minutes.
3) silicon chip after the cleaning is put into NiCl
2+ NaH
2PO
2+ NH
4Cl+NH
3H
2In the mixed liquor of O, under 80～85 ℃ temperature, carry out the chemical nickel plating of silicon chip surface.Silicon chip after the nickel plating cleans, dries through pure water.
4) the silicon chip sawing is become the diode chip for backlight unit of definite shape and certain area according to product specification.
5) chip that sawing is good welds itself and encapsulation base plate by continuous tunnel furnace after cleaning, and carries out the table top acid corrosion and clean, the surface passivation of PN junction, and silicon bidirectional trigger diode is made in moulded section.
Claims (6)
1. the manufacture method of a silicon bidirectional trigger diode is characterized in that comprising the steps:
1) on positive and negative two faces of N-type silicon single crystal flake, finishes P+ N-type semiconductor N diffusion of impurities simultaneously, obtain the P+/N-/P+ structure;
2) positive and negative two surfaces of grinding P+/N-/P+ structure silicon chip;
3) plate nickel dam on positive and negative two surfaces of P+/N-/P+ structure silicon chip;
4) the silicon chip sawing with the P+/N-/P+ structure becomes diode chip for backlight unit;
5) by continuous tunnel furnace diode chip for backlight unit and encapsulation base plate are welded;
6) acid corrosion of carrying out the diode vertical table-board is cleaned, the surface passivation of PN junction, and silicon bidirectional trigger diode is made in moulded section.
2. the manufacture method of a kind of silicon bidirectional trigger diode according to claim 1, the resistivity that it is characterized in that described N-type silicon single crystal flake is 0.03～0.05 Ω cm.
3. the manufacture method of a kind of silicon bidirectional trigger diode according to claim 1 is characterized in that described grinding is mechanical lapping or emery wheel attenuate.
4. the manufacture method of a kind of silicon bidirectional trigger diode according to claim 1 is characterized in that described P+ N-type semiconductor N impurity is boron.
5. the manufacture method of a kind of silicon bidirectional trigger diode according to claim 1, it is characterized in that described sawing become diode chip for backlight unit around PN junction present mesa shape perpendicular to chip surface.
6. the manufacture method of a kind of silicon bidirectional trigger diode according to claim 1 is characterized in that the acid corrosion cleaning and the surface passivation of described PN junction, all carries out on the vertical table-board of diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101222371A CN101399201B (en) | 2008-11-13 | 2008-11-13 | Method for manufacturing silicon bidirectional trigger diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101222371A CN101399201B (en) | 2008-11-13 | 2008-11-13 | Method for manufacturing silicon bidirectional trigger diode |
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| CN101399201A true CN101399201A (en) | 2009-04-01 |
| CN101399201B CN101399201B (en) | 2010-08-18 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937845A (en) * | 2010-08-24 | 2011-01-05 | 如皋市日鑫电子有限公司 | Mesa treatment process of diode |
| CN101651102B (en) * | 2009-08-25 | 2011-03-23 | 南通明芯微电子有限公司 | Bidirectional trigger diode chip production method |
| CN101710571B (en) * | 2009-12-14 | 2011-05-18 | 天水天光半导体有限责任公司 | Forward and reverse corrosion technology of Schottky diode metal structure |
| CN102117806A (en) * | 2010-12-15 | 2011-07-06 | 杭州杭鑫电子工业有限公司 | Duodiode integrating Zener diode with rectifying diode and production method thereof |
| CN102129985A (en) * | 2010-12-29 | 2011-07-20 | 朝阳无线电元件有限责任公司 | Manufacturing method of glass-sealed two-way trigger diode chip |
| CN102129987A (en) * | 2010-12-30 | 2011-07-20 | 常州星海电子有限公司 | Process for passivating bidirectional trigger diode scrapped glass |
| CN102214570A (en) * | 2010-04-04 | 2011-10-12 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102244104A (en) * | 2011-07-07 | 2011-11-16 | 重庆平伟实业股份有限公司 | Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| CN102412268A (en) * | 2011-12-06 | 2012-04-11 | 绍兴旭昌科技企业有限公司 | Flat-type one-way trigger diode chip and manufacturing method thereof |
| CN102522333A (en) * | 2012-01-09 | 2012-06-27 | 薛列龙 | Manufacturing method for planar bidirectional trigger diode chip |
| CN112750766A (en) * | 2020-12-14 | 2021-05-04 | 山东融创电子科技有限公司 | Preparation process of long-life diode |
| CN114823314A (en) * | 2022-03-30 | 2022-07-29 | 浙江里阳半导体有限公司 | TVS chip with planar structure and manufacturing method thereof |
| CN115579287A (en) * | 2022-12-08 | 2023-01-06 | 江苏长晶科技股份有限公司 | Manufacturing method and structure of bidirectional TVS device |
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| CN100466169C (en) * | 2007-04-27 | 2009-03-04 | 济南晶恒有限责任公司 | Method for making super thin two-way trigger tube |
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2008
- 2008-11-13 CN CN2008101222371A patent/CN101399201B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101651102B (en) * | 2009-08-25 | 2011-03-23 | 南通明芯微电子有限公司 | Bidirectional trigger diode chip production method |
| CN101710571B (en) * | 2009-12-14 | 2011-05-18 | 天水天光半导体有限责任公司 | Forward and reverse corrosion technology of Schottky diode metal structure |
| CN102214570A (en) * | 2010-04-04 | 2011-10-12 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102214570B (en) * | 2010-04-04 | 2015-06-24 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN101937845A (en) * | 2010-08-24 | 2011-01-05 | 如皋市日鑫电子有限公司 | Mesa treatment process of diode |
| CN102117806A (en) * | 2010-12-15 | 2011-07-06 | 杭州杭鑫电子工业有限公司 | Duodiode integrating Zener diode with rectifying diode and production method thereof |
| CN102117806B (en) * | 2010-12-15 | 2012-07-04 | 杭州杭鑫电子工业有限公司 | Duodiode integrating Zener diode with rectifying diode and production method thereof |
| CN102129985A (en) * | 2010-12-29 | 2011-07-20 | 朝阳无线电元件有限责任公司 | Manufacturing method of glass-sealed two-way trigger diode chip |
| CN102129987A (en) * | 2010-12-30 | 2011-07-20 | 常州星海电子有限公司 | Process for passivating bidirectional trigger diode scrapped glass |
| CN102244104B (en) * | 2011-07-07 | 2013-05-22 | 重庆平伟实业股份有限公司 | Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| CN102244104A (en) * | 2011-07-07 | 2011-11-16 | 重庆平伟实业股份有限公司 | Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| CN102412268A (en) * | 2011-12-06 | 2012-04-11 | 绍兴旭昌科技企业有限公司 | Flat-type one-way trigger diode chip and manufacturing method thereof |
| CN102522333B (en) * | 2012-01-09 | 2013-12-25 | 薛列龙 | Manufacturing method for planar bidirectional trigger diode chip |
| CN102522333A (en) * | 2012-01-09 | 2012-06-27 | 薛列龙 | Manufacturing method for planar bidirectional trigger diode chip |
| CN112750766A (en) * | 2020-12-14 | 2021-05-04 | 山东融创电子科技有限公司 | Preparation process of long-life diode |
| CN112750766B (en) * | 2020-12-14 | 2022-12-27 | 山东融创电子科技有限公司 | Preparation process of long-life diode |
| CN114823314A (en) * | 2022-03-30 | 2022-07-29 | 浙江里阳半导体有限公司 | TVS chip with planar structure and manufacturing method thereof |
| CN115579287A (en) * | 2022-12-08 | 2023-01-06 | 江苏长晶科技股份有限公司 | Manufacturing method and structure of bidirectional TVS device |
| CN115579287B (en) * | 2022-12-08 | 2023-02-28 | 江苏长晶科技股份有限公司 | Manufacturing method and structure of bidirectional TVS device |
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|---|---|
| CN101399201B (en) | 2010-08-18 |
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