CN102105618B - 等离子处理设备和电子器件制造方法 - Google Patents

等离子处理设备和电子器件制造方法 Download PDF

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Publication number
CN102105618B
CN102105618B CN2009801292803A CN200980129280A CN102105618B CN 102105618 B CN102105618 B CN 102105618B CN 2009801292803 A CN2009801292803 A CN 2009801292803A CN 200980129280 A CN200980129280 A CN 200980129280A CN 102105618 B CN102105618 B CN 102105618B
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China
Prior art keywords
plasma
chamber
processing apparatus
plasma processing
substrate stage
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Chinese (zh)
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CN102105618A (zh
Inventor
田中洋
小长和也
渡边荣作
森本荣太郎
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Canon Anelva Corp
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Canon Anelva Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
    • F16B35/00—Screw-bolts; Stay-bolts; Screw-threaded studs; Screws; Set screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN2009801292803A 2008-07-31 2009-07-30 等离子处理设备和电子器件制造方法 Active CN102105618B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008197582 2008-07-31
JP2008-197582 2008-07-31
PCT/JP2009/003612 WO2010013476A1 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN102105618A CN102105618A (zh) 2011-06-22
CN102105618B true CN102105618B (zh) 2012-07-25

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Family Applications (1)

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CN2009801292803A Active CN102105618B (zh) 2008-07-31 2009-07-30 等离子处理设备和电子器件制造方法

Country Status (5)

Country Link
US (1) US8303785B2 (cg-RX-API-DMAC10.html)
JP (2) JP4580040B2 (cg-RX-API-DMAC10.html)
KR (1) KR101216790B1 (cg-RX-API-DMAC10.html)
CN (1) CN102105618B (cg-RX-API-DMAC10.html)
WO (1) WO2010013476A1 (cg-RX-API-DMAC10.html)

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US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
JP5458177B2 (ja) 2010-12-28 2014-04-02 キヤノンアネルバ株式会社 半導体装置の製造方法および装置
CN103348446B (zh) * 2011-02-09 2016-08-24 应用材料公司 用于rf pvd腔室且能均匀调整的esc接地套件
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
TWI661746B (zh) * 2011-10-05 2019-06-01 應用材料股份有限公司 電漿處理設備及其蓋組件（一）
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
WO2014036000A1 (en) 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
DE102013005868A1 (de) 2013-04-05 2014-10-09 Leybold Optics Gmbh Vorrichtung zur Vakuumbehandlung von Substraten
WO2016021496A1 (ja) * 2014-08-08 2016-02-11 キヤノンアネルバ株式会社 スパッタ装置および処理装置
WO2017098292A1 (en) * 2015-12-09 2017-06-15 Applied Materials, Inc. System configured for sputter deposition on a substrate, shielding device for a sputter deposition chamber, and method for providing an electrical shielding in a sputter deposition chamber
CN109473331B (zh) * 2017-09-08 2022-11-25 北京北方华创微电子装备有限公司 腔室屏蔽装置和半导体处理腔
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
TWI872423B (zh) 2017-11-17 2025-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
JP7235761B2 (ja) 2017-11-17 2023-03-08 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理源および基板バイアスの同期パルス化
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
KR20250153883A (ko) 2017-11-17 2025-10-27 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
CN111602235B (zh) 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
KR102071807B1 (ko) * 2018-10-31 2020-01-30 동국대학교 경주캠퍼스 산학협력단 듀오플라즈마트론의 교체형 중간전극판
CN112334591B (zh) * 2018-12-27 2023-07-18 株式会社爱发科 防附着构件和真空处理装置
US11887812B2 (en) 2019-07-12 2024-01-30 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application

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CN1670920A (zh) * 2004-03-17 2005-09-21 安内华股份有限公司 真空处理装置

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CN1604266A (zh) * 2004-11-12 2005-04-06 哈尔滨工业大学 等离子体脉冲注入的装置

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Also Published As

Publication number Publication date
WO2010013476A1 (ja) 2010-02-04
JP4580040B2 (ja) 2010-11-10
JP2010163690A (ja) 2010-07-29
KR101216790B1 (ko) 2012-12-28
JPWO2010013476A1 (ja) 2012-01-05
CN102105618A (zh) 2011-06-22
KR20100084705A (ko) 2010-07-27
US8303785B2 (en) 2012-11-06
JP5189609B2 (ja) 2013-04-24
US20110089023A1 (en) 2011-04-21

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