CN102097546A

CN102097546A - Method for cutting LED chip

Info

Publication number: CN102097546A
Application number: CN2010105584453A
Authority: CN
Inventors: 张秋霞; 任忠祥; 夏伟; 徐现刚
Original assignee: Shandong Huaguang Optoelectronics Co Ltd
Current assignee: Shandong Huaguang Optoelectronics Co Ltd
Priority date: 2010-11-25
Filing date: 2010-11-25
Publication date: 2011-06-15
Anticipated expiration: 2030-11-25
Also published as: CN102097546B

Abstract

The invention provides a method for cutting an LED (Light Emitting Diode) chip, which comprises the steps of: on the back face of the chip, sawing along the middle position of two electrodes on the front face, wherein the sawing depth is 1/6 to 2/3 of the thickness of the chip, and then splitting the chip on the front face of the chip along the sawing mark by using a splitter. The method is simple in process and free from the manufacturing of a scribing slot and adopts the manner of sawing on the back face and splitting on the front face so that each side on the front face of the chip only loses the area as large as 1 micron to 5 microns of splitting width, more tube cores can be formed on each chip by splitting so as to increase the chip productivity remarkably, the chip is free from edge breaking, corner breaking, burr, cracking and other problems owing to the manner of sawing on the back face and splitting on the front face as well as incomplete sawing on the back face, and simultaneously, the method is free from the problems of pollution, arsenic evaporation and arsenic oxides and the like.

Description

A kind of cutting method of led chip

Technical field

The present invention relates to the cutting method of LED (light-emitting diode) chip, comprise the cutting of GaAs, gallium phosphide, silicon LED chip, belong to semiconductor chip cutting technique field, be cut into the example explanation with the GaAs led chip below.

Background technology

In the led chip processing procedure, cutting is an important link, and the purpose of cutting is to carry out electrode, and the chip that connects together is divided into individual chips one by one.For led chip, cutting technique has two kinds at present: saw blade cutting and laser cutting.Industry that traditional also is adopts the most widely, and cutting mode is the saw blade cutting.

Saw blade cutting is that the saw blade blade with high speed rotating cuts chip (cutting is saturating) one-tenth singulated dies fully by the formula that configures.The saw blade cutting technique is quite ripe, still is the mainstream technology of GaAs chip cutting so far.But there are some troubling problems in this cutting mode: some semiconductor material is very crisp on physical property, and it is more cracked that this point makes that it adds man-hour; After the saw blade cutting, the chip edge produce collapse the limit, collapse the angle, burr etc., have a strong impact on product quality; Saw blade cutting spended time is more, and production efficiency is low; The LED luminous zone is in the zone from chip surface 1/20 to 1/3, the cutting groove that existing cutting technique forms will reduce the area of luminous zone, chip around each limit all to saw the chip area of 10-20 μ m, make the chip of same repetition interval, cutting back light-emitting area reduces by 2 groove area occupied.

Laser cutting is a kind of new technique that occurs along with the development of laser technology.It is that laser beam with certain energy density and wavelength focuses on chip surface, goes out cut by laser in the chip surface calcination, and then with the sliver machine chip is split along cut.Chinese patent literature CN 101165877A discloses a kind of " laser processing of gallium arsenide wafer ", along the processing of ablating of the spacing track irradiating laser light of gallium arsenide wafer, cover the chip that debris shield film shielding irradiating laser light produces, cut off gallium arsenide wafer along spacing track at last.Laser cutting is with the obvious advantage than saw blade cutting, production capacity height, rate of finished products height, be easy to automation mechanized operation, reduce human cost etc., but also there are some problems in himself.Because GaAs at high temperature decomposes, after the laser action, arsenic from arsenic oxides such as surface evaporation or generation arsenic trioxides, will attach a series of expenses such as bringing the pollution control measure in a large number.In addition, adopt laser scribing technology, because of the laser radiation meeting destroys the chip active area, need to be provided with the marking groove of certain width around chip, the marking groove width can be reduced to 15-30 μ m, has saved very big area than saw blade technology entire chip.Yet, no matter be the light-emitting zone that saw blade or laser scribing all can destroy certain area, these directly influence the chip production capacity.

Summary of the invention

The present invention is directed to the deficiency that above-mentioned existing led chip cutting technique exists, a kind of good cutting effect is provided, can influence the cutting method of the led chip of illumination effect.

The cutting method of led chip of the present invention, be at chip (comprising GaAs, gallium phosphide or the silicon) back side, along positive two electrode position intermediate saw blades, saw blade depth is the 1/6--2/3 of chip thickness, and then chip is split along the saw blade tool marks in chip front side with the sliver machine, specifically may further comprise the steps:

(1) paster: the front (P face) of chip to be cut is sticked on the film, and the back side of chip (N face) is placed on chip on the veneer sawing machine objective table together with this film up then;

(2) saw blade: the chip that is placed on the veneer sawing machine objective table is carried out saw blade, and saw blade depth is set at the 1/6--2/3 of chip thickness;

(3) pour mask: the chip attach that will have tool marks is on another film, and the back side of chip is placed on chip on the sliver machine brace table together with this film then towards film at this moment;

(4) sliver: the saw blade tool marks sliver of the chip front side that forms along saw blade by the sliver machine is tube core independently one by one with chip cutting.

Technology of the present invention is simple, need not to make marking groove, take saw blade front, back side sliver, make each limit of chip front side only lose the sliver cutter width regions of 1 μ m-5 μ m, can on every chip, divide the tube core of greater number, increased the chip production capacity greatly, owing to take back of the body saw normal fracture mode, back of the body saw is not cut, so chip can not occur collapsing the limit, collapses the angle, burr, problem such as cracked, simultaneously pollution-free, problems such as no arsenic evaporation and arsenic oxide exist.

Description of drawings

Fig. 1 is the schematic diagram of the back side tool marks that form behind the GaAs chip saw blade.

Fig. 2 is the back side tool marks position view behind the GaAs chip saw blade.

Fig. 3 is the schematic cross-section behind the GaAs chip saw blade.

Fig. 4 is the sliver schematic diagram of GaAs chip.

Among the figure: 1, GaAs chip, 2, the saw blade tool marks, 3, single chip, 4, single chip electrode, 5, sliver machine brace table, 6, the splitting cutter.

Embodiment

Being cut into example below in conjunction with accompanying drawing with the GaAs led chip elaborates led chip cutting method of the present invention.

1 paster: the front (P face) of GaAs chip 1 is sticked on the blue film, make its back side (N face) up, then chip is placed on the veneer sawing machine objective table together with this blue film, suck fixing by asepwirator pump;

2 saw blades: begin saw blade after configuring parameters such as cut coverage, depth of cut, cutting speed and chip size, saw blade carries out at the back side of GaAs chip 1 (N face), and depth of cut is set in the 1/6--2/3 of chip thickness.The thickness 100 μ m of GaAs chip 1 in the present embodiment, single chip size 203 μ m, depth of cut is set at 40 μ m, cutting cycles 203 μ m, cutting position is in the middle of electrode.The back side saw blade tool marks 2 that form behind GaAs chip 1 saw blade form cancellate many saw blade tool marks 2 with some cycles at GaAs chip 1 back side (N face) as shown in Figure 1.The CCD that sees through the veneer sawing machine below can see the position of saw blade tool marks 2 as shown in Figure 2, and all between electrode, the grid that the saw blade tool marks form is single chip 3, and single chip electrode 4 is positioned in the middle of the single chip 3.Fig. 3 has provided the schematic cross-section behind the GaAs led chip saw blade.

3 pour masks: the GaAs chip attach that will have the saw blade tool marks is on another blue film, and the one side of the saw blade tool marks 2 of chip is placed on chip on the brace table 5 of sliver machine, as shown in Figure 4 towards this blue film then together with another blue film at this moment;

4 slivers: set the sliver parameter on the sliver machine, sliver machine brace table 5 openings are made as 200 μ m, and the splitting degree of depth is made as 3 μ m, splitting cycles 203 μ m, then along saw blade tool marks sliver, it is vertical that splitting cutter 6 directions of motion and chip are put the plane, and chip cutting is chip independently one by one.

Claims

1. the cutting method of a led chip is characterized in that, at chip back, along positive two electrode position intermediate saw blades, saw blade depth is the 1/6--2/3 of chip thickness, and then chip is split along the saw blade tool marks in chip front side with the sliver machine, specifically may further comprise the steps:

(1) paster: the front of chip to be cut is sticked on the film, and the back side of chip is placed on chip on the veneer sawing machine objective table together with this film up then;