TW201234463A - Semiconductor device and cutting method thereof - Google Patents

Abstract

A semiconductor device and a cutting method thereof are disclosed. The cutting method includes the following steps. An illuminant layer formed on a substrate is cut by a laser to form a trench on a surface of the illuminant layer. The substrate is cut by a cutter to form a cutting line on the back of the substrate. The cutting line and the trench are located on a break line. The substrate and the illuminant layer are broken along the break line to form a broken section.

Description

201234463

TW7411PA VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor element, and more particularly to a semiconductor element for improving dicing yield and a method of dicing the same. [Prior Art]

Traditional LEDs are cut in two ways: diamond cutting and laser cutting. The diamond knife is cut on the back surface of the substrate of the LED chip by a diamond knife to cut a groove having a depth of several micrometers, and then the groove on the front surface of the LED is aligned with the groove at the scribe line to split the blade to form a light. Two pole

曰曰

In addition, if the diamond cutter is used to replace the diamond cutter for the scribing process, the groove drawn by the laser scribing has a high aspect ratio, so the appearance of the split LED after the splitting is better than that of the diamond cutter. Fortunately, because of the laser cutting method, there is no diamond knife loss, so the manufacturing cost of the light-emitting diode die is low.

In addition, in the "Semiconductor Optoelectronic Component and Cutting Method" thereof, the Republic of China Patent Publication No. 200826316, by combining laser cutting and diamond knife cutting, removes the blackened area on the semiconductor photovoltaic element die and reduces the loss of the diamond knife, but The tip of the diamond knife is not easy to maintain sharpness, can not completely concentrate the stress and break according to the predetermined direction, causing the chip to collapse or crack, resulting in poor appearance of the crystal grain and a decrease in the yield of the process. Since the cutting and separation of the crystal grains is already in the back-end process of the light-emitting diode, if the product is scrapped due to poor quality of the cutting process, the time-consuming and expensive production cost of the front-end process will be drained, so 201234463

The dicing of the TW7411PA die is of critical importance for the fabrication of semiconductor components such as light-emitting diodes. SUMMARY OF THE INVENTION The present invention relates to a semiconductor device and a method of cutting the same, in which a trench formed by laser cutting and a cutting line formed by cutting a tool are respectively cut on the front and back surfaces of the substrate of the semiconductor component to avoid When cracking, there is no stress concentration cusp and it is prone to crystal chipping or cracking. According to an aspect of the invention, a cutting method is proposed comprising the following steps. A light-emitting layer formed on a substrate is laser-cut to form a groove on a surface of the light-emitting layer. The substrate is cut with a cutter to form a secant line on the back side of the substrate, and the cutting line and the groove are located on a split line. The substrate and the light-emitting layer are cleaved along the split line to form a cross section. According to another aspect of the present invention, a semiconductor device is provided which includes a light emitting layer and a substrate. The light-emitting layer is disposed on the substrate, and the surface of the light-emitting layer after laser cutting is a 'sweet sugar surface*. The surface of the substrate cut by the cutter is an inclined surface. The rough surface and the inclined surface are connected to a section formed when the crack is formed. In order to better understand the above and other aspects of the present invention, the preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. A groove of a few micrometers in depth is cut by laser cutting, the position of which corresponds to the position of the cutting line formed by the cutting of the cutter. Groove formed by laser 201234463

TW7411PA = 罙 not wide This crack has a stress set f tip (ie, laser cutting is large ^), and it is not easy to cause chamfering or cracking. Hereinafter, a method of introducing a semiconductor element such as a light-emitting diode, such as a white light or a blue light-emitting diode, for example, is a sapphire substrate of alumina. The cutting tool is, for example, a hard diamond knife with a - tip. However, in the present embodiment, the sharper the tip end of the cutter, the more likely the wear is generated, and the manufacturing cost of the semiconductor component is increased. Therefore, this example uses a high aspect ratio trench formed by laser cutting to generate a stress ^^ rather than a reference point when the tip of the tool is cleaved. Therefore, whether the tip of the tool is sharp or not will not greatly affect the yield of the grain after splitting. Referring to Figures 1, 2A and 2B, wherein Fig. 1 is a flow chart showing a cutting method according to an embodiment, and (9) is a cross-sectional view showing a cutting method of a semiconductor device in accordance with an embodiment. In the figure, step S10 is formed by laser 10 cutting a light-emitting layer 110 formed on a substrate 1 to form a trench 106 on one surface 11〇a of the light-emitting layer 11 . In step S20, the substrate 1 is cut by a cutter (not shown) to form a cutting line 108 on the back surface 1〇4 of the substrate 1 , and the cutting line 108 and the groove 106 are located on a split line β. As shown in Figure 2A. Step § 30 is to open the substrate 1 〇〇 and the luminescent layer 11 劈 along the cleavage line to form a section 115, as shown in Fig. 2 . Please refer to FIGS. 2 and 3', wherein FIG. 3 is a schematic cross-sectional view of a semiconductor device in accordance with an embodiment. The semiconductor device 2 includes a substrate 100 and a light emitting layer 110. The substrate 100 has a front side 102 and a back side 104. The light-emitting layer 11〇 is disposed on the front surface 1〇2 of the substrate 1〇〇, and is issued s 5 201234463 .

An electrode layer 1U is provided on the TW7411PA optical layer 110. The material of the light-emitting layer 11〇 may be a semiconductor material of a m_V compound, such as GaN, (jaP, I nP,

InGaAIN, InGaAlP, InGaAlAs, GaAlPAs or a combination thereof Further, the light-emitting layer 110 may be replaced by other optoelectronic semiconductor materials to form an optoelectronic semiconductor component. The electrode layer 1U includes a p-type electrode 112 and an N-type electrode 113. When there is a voltage difference between the P-type electrode 112 and the N-type electrode 113, the current in the light-emitting layer 11A can easily flow from the p-type electrode 112 to the N-type electrode 113, so that the light-emitting layer 11 is called to emit light. In an embodiment, when the semiconductor device 20 is a flip-chip type, the light-emitting layer 110 has the back surface 104 of the substrate 100 as a main light-emitting surface, and most of the light emitted by the light-emitting layer 110 can penetrate the substrate 1 Oh, it is difficult to be shielded by the electrode layer 111 and the amount of light is lost. Further, in step S10, the light-emitting layer 11 丨〇 cuts a trench 106 having a depth of several micrometers with a laser beam. In step S2, the substrate 切割 cuts a cutting line 1 〇 8 having a depth of several micrometers with a cutter. The step s1 may be performed before, after or at the same time as step S20, and the order may be adjusted according to actual needs. In one embodiment, the depth of the trenches 1 〇 6 is less than or equal to the thickness of the luminescent layer 110. The cutting depth of the cutting line 108 is smaller than the thickness of the substrate 丨 (10), for example, less than half the thickness of the substrate 100, so that the total depth after cutting is still smaller than the total thickness H of the substrate 1 发光 and the luminescent layer 110 to avoid breakage during cutting. . In addition, the depth of the cut of the grooves 1〇6 may be smaller or larger than the cutting depth of the cutting line 108, and may be adjusted according to actual needs. In Fig. 3, since the surface of the light-emitting layer 11 is cut by the laser beam, the surface is a rough surface 114, which blocks part of the light, avoids light leakage, and allows most of the light to pass from the back surface 104 of the substrate 1 (main Luminous surface) shot, 201234463

It has a notch, for example, a light output rate of a v-notch (king light surface). The cutting line 108 formed by the cutting of the cutter. The side wall of the recess is a double bevel with the top end A formed by the tip end of the tool. Therefore, the surface of the substrate 1GG cut by the cutter is an inclined surface 116. Referring to Fig. 9 (9), the substrate 1 and the light-emitting layer 11G are biased downward along the cleavage line β, for example, by the trowel 12. Since the bottom of the groove 106 is a stress concentration tip (laser cutting tip), the split line B will reach the notch along the bottom of the (4) 1〇6 at the shortest distance: the tip A, so the semiconductor element 2 after splitting is not easy In the event of a chamfer or chaotic 4, a section 115 that is intact and fractured in a predetermined direction is present on a vertical plane, as shown in Figure 2b. Further, in Fig. 3, the groove 106 formed by the laser cutting is connected to the upper side of the section 115, and the cutting line 108 formed by the cutter cutting is connected to the lower side of the section 115 (the top end of the notch a) Therefore, the appearance of the semiconductor element 20 after the dicing can be improved, and the yield of the dicing can be improved. In addition, the inclined surface 116 of the notch is located around the substrate 1〇〇, and is inclined at an angle with respect to the back surface 104 (main light-emitting surface) of the substrate 1〇〇, and the partially emitted light can be outwardly refracted at a large angle. Further, the light exit angle of the light-emitting layer 11 () is increased. The semiconductor device and the dicing method thereof disclosed in the above embodiments of the present invention respectively scribe a trench formed by laser 7 201234463 TW7411PA 'cutting and a cutting line formed by cutting a tool on the front and back surfaces of the substrate of the semiconductor component. . The position of the groove corresponds to the position where the cutting line is located. Since the bottom of the groove is a stress-concentrating tip (laser cutting tip), the split line will reach the tip of the notch along the bottom of the groove at the shortest distance, so that the semiconductor element after splitting is less prone to chipping or cracking. The situation, but a section that appears intact and breaks in a predetermined direction. Therefore, it is possible to prevent the tip of the conventional tool from being difficult to maintain a sharp shape, and the case where the crack is not concentrated and the tip is prone to chipping or cracking. In addition, the rough surface formed by laser cutting can improve the reflectance of the light-emitting layer on the side and increase the light-emitting rate of the main light-emitting surface. In the above, the present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the present invention. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method of cutting a semiconductor device in accordance with an embodiment. 2A and 2B are cross-sectional views showing a method of cutting a semiconductor element in accordance with an embodiment. Figure 3 is a cross-sectional view showing a semiconductor device in accordance with an embodiment. [Main component symbol description]

201234463 TV/7411PA

10 : Laser 12 : File 20 : Semiconductor element 100 : Substrate 102 : Front surface 104 : Back surface 106 : Trench 108 : Cutting line 110 : Light-emitting layer 110 a : Surface 111 : Electrode layer 112 : Ρ-type electrode 113 : Ν-type electrode 114 • Matte 115: Section 116: Inclined face A: Top B: Split line Η : Total thickness 9

Claims (1)

201234463 TW7411PA VII. Patent Application Range: 1. A cutting method comprising: laser cutting a light emitting layer formed on a substrate to form a groove on a surface of the light emitting layer; cutting the substrate with a cutter, Forming a cutting line on the back surface of the substrate, the cutting line and the groove are located on a cleavage line; and the substrate and the luminescent layer are cleaved along the cleavage line to form a cross section. 2. The cutting method according to claim 1, wherein the groove has a cutting depth equal to or less than a thickness of the luminescent layer. 3. The cutting method of claim 1, wherein the cutting line has a cutting depth smaller than a thickness of the substrate. 4. The cutting method of claim 1, wherein the groove has a cutting depth that is less than a cutting depth of the cutting line. 5. The cutting method of claim 1, wherein the substrate and the luminescent layer are cleaved along the cleavage line with a file. 6. The cutting method according to claim 1, wherein the surface of the luminescent layer after laser cutting is a rough surface. 7. The cutting method according to claim 1, wherein the surface of the substrate cut by the cutter is an inclined surface. 8. The cutting method according to claim 1, wherein the luminescent layer is formed by cutting the back surface of the substrate as a main illuminating surface. 9. A semiconductor device fabricated according to the cutting method of claim 1, comprising a light-emitting layer and a substrate, wherein the light-emitting layer is disposed on the substrate, and the surface of the light-emitting layer after laser cutting is Rough 201234463 * TW7411PA surface, the surface of the substrate cut by the cutter is an inclined surface, and the rough surface is connected to the inclined surface to form a section formed by the splitting. 10. The semiconductor device according to claim 9, wherein the light-emitting layer has a back surface of the substrate after the dicing as a main light-emitting surface.