CN105226143A - A kind of cutting method of GaAs base LED chip - Google Patents
A kind of cutting method of GaAs base LED chip Download PDFInfo
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- CN105226143A CN105226143A CN201510629523.7A CN201510629523A CN105226143A CN 105226143 A CN105226143 A CN 105226143A CN 201510629523 A CN201510629523 A CN 201510629523A CN 105226143 A CN105226143 A CN 105226143A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000003776 cleavage reaction Methods 0.000 claims description 11
- 230000007017 scission Effects 0.000 claims description 11
- 238000003698 laser cutting Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000009172 bursting Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
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- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- KIGJWIPKAWAGCE-UHFFFAOYSA-L gun blue Chemical compound Cl.[Cu+2].O[Se](=O)=O.[O-]S([O-])(=O)=O KIGJWIPKAWAGCE-UHFFFAOYSA-L 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
A cutting method for GaAs base LED chip, comprises the steps: (1) P face hemisection, forms crisscross cutting groove, chip p side electrode equally-spaced is opened; (2) by chip P electrode downwardly tunica albuginea, N electrode upwards, is attached on tunica albuginea; (3) cutting groove along the hemisection of P face carries out chip N face scribing, release chip N face stress; (4) chip streaked is carried out pour mask, chip is transferred on blue film by tunica albuginea; (5) carry out sliver at the chopper of chip N face breaking machine along cut, chip is processed to independently crystal grain.This utilizes the pasting method after improving, adopt the combination cutting method that veneer sawing machine and laser scribing means advantage are got mutually, release chip P face stress and N face stress to greatest extent, and the deformational stress brought when reducing pad pasting impact, what easily occur after thereby reducing chip cutting collapses limit, splits tube core phenomenon, improves the presentation quality after chip cutting.
Description
Technical field
The present invention relates to the cutting method of a kind of LED (light-emitting diode) chip, belong to LED chip cutting technique field.
Background technology
In LED chip preparation technology, cutting is exactly the process whole chip separation after photoetching, plated film, the manufacturing process such as thinning being become the single crystal grain of required size, and this is a procedure indispensable in semiconductor light-emitting diode chip preparation technology.For LED chip, more traditional is also that existing industry adopts cutting mode to be the most widely saw blade cutting.
Saw blade cutting is, by the program that the diamant of High Rotation Speed (3-4r/min) sets by process requirements, chip is cut into single crystal grain completely.The cutting method of conventional GaAs base LED chip first with diamant, chip is carried out micro-cutting (hemisection), more entirely cut off along hemisection tool marks with diamant.But saw blade cutting existence inevitable problem: GaAs material is more crisp, and the metal material that chip positive back side meeting evaporation is thicker, make the stress of chip itself larger, cutter direct contact chip when adding cutting, it is easily broken when this just makes chip manufacture, chip circumference edge easily produces and collapses limit, collapses angle, crackle etc., affects chip presentation quality, reduces yield.
Laser cutting is a kind of novel cutting technique occurred along with the development of laser technology, mainly contains laser surface cutting and stealthy cutting two kinds.Laser cutting be by the laser beam focus of certain energy density and wavelength in chip surface or inside, go out cut by laser at chip surface or inner calcination, and then split along cut with breaking machine.The advantage such as laser cutting has that production capacity is high, rate of finished products is high, automation mechanized operation, cost are low.But also there are some problems in laser cutting itself, during laser scribing, laser irradiation can destroy the active area of chip, need to arrange wider marking groove, owing to there is thicker metal level in marking groove, after laser action in chip surrounding, a large amount of chips can be produced, scribe line trench edges there will be spraying, ablation phenomen, also limit the lifting of production capacity, also can occur the phenomenons such as difficulty is split, two born of the same parents because of the ductility of metal material during breaking machine sliver simultaneously.
Chinese patent literature CN102709171B disclosed " cutting method of GaAs substrate super-small LED chip ", comprise: first carry out micro-step of cutting comprehensively at chip surface, the degree of depth of hemisection is 10% ~ 20% of overall chip height, then chip is carried out to the step of full impregnated cutting, be positioned on cutting machine by the chip after hemisection, with diamond cutter, chip carried out from edge the cutting be thoroughly separated along Cutting Road.But the shortcoming of the method carries out thoroughly cutting thing along the Cutting Road of hemisection, and knife up must reduce, and cutter is deepened deeply, and the knife back and chip surface contact area increase, and inevitably produces and burst apart comprehensively, effectively can not solve cutting and to burst apart problem.
CN102709409B disclosed " a kind of quaternary system LED chip and cutting method thereof ", comprise: the first step is at LED chip positive terminal one side diamond cutting cutter hemisection LED chip, form Cutting Road, the positive terminal of the LED chip equidistantly arranged is separated, the positive terminal of second step LED chip sticks blue film, negative pole is short sticks wheat membrane, 3rd step by the positive terminal of LED chip down, negative pole end is positioned on the splitting platform of splitting machine upward, broken by LED chip along Cutting Road with the splitting cutter of splitting machine, LED chip is processed to one by one independently crystal grain.But the shortcoming of the method is chip positive pole diamond tool cuts, and negative pole directly uses the splitting of splitting cutter, act directly on rigidity strength on chip large, the warping stress of chip self is also large, and occur bursting apart, the collapse probability at angle of the chip after cutting is very large.
CN104347760A disclosed " a kind of cutting method of LED chip ", comprise: mark cut at chip back laser, with diamond saw blade cutter along cut saw blade, also comprise and will carry on the back the chip upset pour mask of cutting, cut into many crystal grain in chip front side along groove with sliver cutter.But the shortcoming of the method is chip back laser mark cut after directly cut with saw blade knife again, cut groove edge is not smooth, easily causes saw blade knife to collapse cutter, causes bursting apart, and the chip of preparation is the chip at the bottom of rebush, the inapplicable chip prepared with common process.
CN102079015A disclosed " a kind of laser cutting method of GaAs base LED chip ", comprise: in GaAs chip N face, laser cutting forms laser scratch, then split by chip along laser scratch at GaAs chip P face breaking machine, the degree of depth forming laser scratch is the 1/10-4/5 of chip thickness.But the shortcoming of the method is chip N face laser scratch when crossing dark, easily destroy chip epitaxial layer structure, when the degree of depth is not enough, although what P face was maximum as far as possible remains material regions, GaAs material firmly crisp, self stress is larger, when P face is directly split with sliver cutter, easily there is dorsal fissure.
Summary of the invention
Easily occur that chip collapses limit, splits the problem of tube core for existing chip cutting technology, the invention provides one and can avoid occurring collapsing limit, splitting tube core phenomenon, improve the cutting method of the GaAs base LED chip of the rear presentation quality of cutting.
The cutting method of GaAs base LED chip of the present invention, comprises the steps:
(1) P face hemisection: carry out comprehensive hemisection in chip P face, release P face stress;
(2) tunica albuginea is pasted: by chip P electrode downwardly tunica albuginea, N electrode upwards, is attached on tunica albuginea;
(3) N face scribing: the cutting groove in chip N face along the hemisection of P face carries out laser scratch operation, release chip N face stress;
(4) pour mask: chip P electrode downwardly tunica albuginea, N electrode upwards, transfer on blue film by tunica albuginea by chip;
(5) carry out sliver at the chopper of chip N face breaking machine along the cut in step (3), dark and P face half cutting depth of the cutter of chopper merges, and chip is processed to independently crystal grain.
The detailed process of described step (1) P face hemisection is: first carry out comprehensive hemisection along the direction vertical with chip large cleavage limit, comprehensive hemisection is carried out in direction again along parallel large cleavage limit, form crisscross cutting groove, chip p side electrode equally-spaced is opened.
The knife up of described step (1) P face hemisection is set as 120-150 μm, and cutting speed is 20-70mm/ second, and saw blade knife blade overhang is 550-600 μm, and cutting groove width is 15-20 μm.
The degree of depth of described step (1) P face hemisection is 20% ~ 25% of chip thickness.
First tunica albuginea is toasted 5-10 second at 67-73 DEG C when described step (2) pastes tunica albuginea, the thorough diastole of film is opened, reduce the deformational stress impact that film strips is come.
The laser power of described step (3) N face scribing is 1.4-1.7W, and speed is 70-80mm/s, and scratch width is 8-10 μm.
The degree of depth of described step (3) N face scribing is 20% ~ 30% of chip thickness.
Before described step (4) pour mask operation, first blue film is toasted 5-10 second at 67-73 DEG C, the thorough diastole of blue film is opened, reduce the deformational stress impact that film strips is come.
In described step (5), breaking machine chopper thickness of knife edge is 8 μm, and chopper tool marks width is 10-15 μm.
The shape of the cut shape of scribing in cutting groove shape, described step (3) in described step (1) and the middle breaking machine chopper tool marks of described step (5) is all V-shaped.
The combination cutting method that the present invention adopts veneer sawing machine and laser scribing means advantage to get mutually, hemisection operation is carried out in chip P face, N face is first carried out laser scribing operation and is carried out sliver operation again, release chip P face stress and N face stress to greatest extent, fully release the stress of chip internal, and the cutting groove shape of three kinds of operating types is all V-type, ensure that the fusion that chip is stressed under different cutting situation, chip outward appearance after cutting is without collapsing limit, split tube core, edge impulse-free robustness, effectively improves the chip presentation quality after cutting.
Accompanying drawing explanation
Fig. 1 is the structural representation after the comprehensive hemisection in chip P face of the present invention.
Fig. 2 is the schematic diagram after chip of the present invention large cleavage limit and both sides, little cleavage limit cut away fringe region.
Fig. 3 is the structural representation after the laser scribing of chip N face of the present invention.
Fig. 4 is the structural representation after the breaking machine sliver of chip N face of the present invention.
In figure: 1, p face electrode, 2, epitaxial loayer, 3, hemisection tool marks, 4, substrate, 5, n face electrode, 6, urine from limit and aim at wire casing, 7, cut, 8, breaking machine chopper tool marks.
Embodiment
The cutting method of GaAs base LED chip of the present invention, specifically comprises the steps:
(1) the comprehensive hemisection in P face
The p side electrode 1 of LED chip is upwards positioned on veneer sawing machine workbench, clicks after selecting hemisection operation procedure " automatically cutting ", start cutting after veneer sawing machine automatic calibration level, until chip CH1 face and CH2 face have been cut.As shown in Figure 1.First carry out comprehensive hemisection along the direction vertical with chip large cleavage limit, then carry out comprehensive hemisection along the direction on parallel large cleavage limit, form crisscross cutting groove, chip p side electrode 1 equally-spaced is opened.
Cutting initial feed velocity is 10mm/s, after cutting 25 cuttves, can according to cutting situation adjustment cutter speed 20-70mm/s, and the knife up of saw blade knife is set in 120-150 μm, and the blade overhang of saw blade knife is 550-600 μm.Half cutting depth is 20% ~ 25% of chip thickness, is switched to epitaxial loayer 2 and substrate 4 (see Fig. 1), can retains the material regions that chip is maximum by chip p side electrode 1, and discharges chip P face stress to greatest extent.The cutting groove that hemisection tool marks 3 are formed is V-shaped, and cutting groove top width is 15-20 μm.
(2) after hemisection has been cut, large for chip cleavage limit and region, both sides of the edge, little cleavage limit are cut away, make chip surface outmost turns electrode directly tangent with edge, when providing laser scribing, chip calibrates parallel aligned position, urining from limit aligning wire casing 6 as shown in Figure 2.
(3) paste tunica albuginea, chip P electrode is downward, and N electrode is upwards attached on tunica albuginea
Being faced down by chip P is positioned on laminator heating plate, position, chip large cleavage limit on the right side of heating plate, by laminator operation by adhesive die attachment on tunica albuginea, P faces film, and N faces up.
Before operation, change direct film in the past and adhere to the Normal practice of chip, change into and first toast by film, first toast by tunica albuginea, arranging baking temperature is 67-73 DEG C, toasts 5-10 second, the thorough diastole of film is opened, and reduces the deformational stress impact that film strips is come.
(4) laser N face scribing
Be positioned over by chip on laser scribing machine worktable, chip P face ultrawhite film, N faces up.According to alignment mark (urine from limit and the aim at wire casing 6) leveling that the chip left and right sides cuts out, arranging laser power is 1.4-1.7W, and power stage percentage is 98%, and scribing speed is 70-80mm/ second, focal length is 8.3mm, die layout is 155 μm, and start scribing, the degree of depth of the laser scratch of formation is 20% ~ 30% of chip thickness, scratch width is 8-10 μm, discharge N face stress to greatest extent, as shown in Figure 3, cut 7 shape of laser scribing presents V-type.
(5) pour mask
The chip be attached on tunica albuginea is carried out pour mask operation by laminator, adhesive die attachment after pour mask is on blue film, P faces film, N, towards upper, before blue film pour mask operation, remain and first blue film is carried out baking operation, baking temperature is 67-73 DEG C, toast 5-10 second, the thorough diastole of film is opened, reduce the deformational stress impact that film strips is come.
(6) be placed on by the chip be attached on blue film on breaking machine splitting platform, breaking machine chopper thickness of knife edge is 8 μm, and chopper tool marks width is 10-15 μm.The super blue film in chip P face, N faces up, along laser scratch calibration chip level, arranging breaking machine B-DEPTH (0) is 5 μm, B-DEPTH (90) is 5 μm, STEP is 155 μm, BREAKSPEED is 8000 μm/sec, SLITWIDTH is 160 μm, then clicks and starts to carry out sliver, along chip horizontal clump two sides cut sliver, dark and P face half cutting depth of the cutter of chopper merges, chip has just been processed to many independently crystal grain, and as shown in Figure 4, the shape of breaking machine chopper tool marks 8 is V-shaped.
Claims (10)
1. a cutting method for GaAs base LED chip, is characterized in that, comprises the steps:
(1) P face hemisection: carry out comprehensive hemisection in chip P face, release P face stress;
(2) tunica albuginea is pasted: by chip P electrode downwardly tunica albuginea, N electrode upwards, is attached on tunica albuginea;
(3) N face scribing: the cutting groove in chip N face along the hemisection of P face carries out laser scratch operation, release chip N face stress;
(4) pour mask: chip P electrode is downward, and N electrode upwards, transfer on blue film by tunica albuginea by chip;
(5) carry out sliver at the chopper of chip N face breaking machine along the cut in step (3), dark and P face half cutting depth of the cutter of chopper merges, and chip is processed to independently crystal grain.
2. the cutting method of GaAs base LED chip according to claim 1, it is characterized in that, the detailed process of described step (1) P face hemisection is: first carry out comprehensive hemisection along the direction vertical with chip large cleavage limit, comprehensive hemisection is carried out in direction again along parallel large cleavage limit, form crisscross cutting groove, chip p side electrode equally-spaced is opened.
3. the cutting method of GaAs base LED chip according to claim 1, it is characterized in that, the knife up of described step (1) P face hemisection is set as 120-150 μm, and cutting speed is 20-70mm/ second, saw blade knife blade overhang is 550-600 μm, and cutting groove width is 15-20 μm.
4. the cutting method of GaAs base LED chip according to claim 1, is characterized in that, the degree of depth of described step (1) P face hemisection is 20% ~ 25% of chip thickness.
5. the cutting method of GaAs base LED chip according to claim 1, is characterized in that, first tunica albuginea is toasted 5-10 second at 67-73 DEG C, the thorough diastole of film is opened when described step (2) pastes tunica albuginea, reduces the deformational stress impact that film strips is come.
6. the cutting method of GaAs base LED chip according to claim 1, is characterized in that, the laser power of described step (3) N face scribing is 1.4-1.7W, and speed is 70-80mm/s, and cut is wide is 8-10 μm.
7. the cutting method of GaAs base LED chip according to claim 1, is characterized in that, the degree of depth of described step (3) N face scribing is 20% ~ 30% of chip thickness.
8. the cutting method of GaAs base LED chip according to claim 1, is characterized in that, before described step (4) pour mask operation, first blue film is toasted 5-10 second at 67-73 DEG C, the thorough diastole of blue film is opened, and reduces the deformational stress impact that film strips is come.
9. the cutting method of GaAs base LED chip according to claim 1, is characterized in that, in described step (5), breaking machine chopper thickness of knife edge is 8 μm, and chopper tool marks width is 10-15 μm.
10. the cutting method of GaAs base LED chip according to claim 1, it is characterized in that, the shape of the cut shape of scribing in cutting groove shape, described step (3) in described step (1) and the middle breaking machine chopper tool marks of described step (5) is all V-shaped.
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| CN105789390A (en) * | 2016-05-05 | 2016-07-20 | 扬州乾照光电有限公司 | Production technology of quaternary system LED chip |
| CN107394016A (en) * | 2017-07-24 | 2017-11-24 | 扬州乾照光电有限公司 | A kind of preparation method for improving light emitting diode monolithic output |
| CN107768501A (en) * | 2017-10-17 | 2018-03-06 | 扬州乾照光电有限公司 | The sorting method for packing of LED cellulars in a kind of LED chip |
| CN108044240A (en) * | 2017-12-19 | 2018-05-18 | 东莞市盛雄激光设备有限公司 | The processing method and sliver apparatus of a kind of liquid crystal display |
| CN108133984A (en) * | 2018-01-30 | 2018-06-08 | 厦门乾照光电股份有限公司 | A kind of light emitting diode with vertical structure and preparation method thereof |
| CN108597999A (en) * | 2018-05-28 | 2018-09-28 | 扬州虹扬科技发展有限公司 | A kind of cutting method promoting chip separation rate |
| CN108582529A (en) * | 2018-04-13 | 2018-09-28 | 无锡奥夫特光学技术有限公司 | A kind of cutting method of optical window |
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| CN110098115A (en) * | 2018-01-31 | 2019-08-06 | 东莞新科技术研究开发有限公司 | The cutting method of wafer |
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| CN112151642A (en) * | 2019-06-26 | 2020-12-29 | 山东浪潮华光光电子股份有限公司 | Cutting method for reducing cutting loss of LED chip |
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