CN105226143A - GaAs-based LED chip cutting method - Google Patents

GaAs-based LED chip cutting method Download PDF

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CN105226143A
CN105226143A CN 201510629523 CN201510629523A CN105226143A CN 105226143 A CN105226143 A CN 105226143A CN 201510629523 CN201510629523 CN 201510629523 CN 201510629523 A CN201510629523 A CN 201510629523A CN 105226143 A CN105226143 A CN 105226143A
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chip
surface
cutting
film
method
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CN 201510629523
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CN105226143B (en )
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郑军
李法健
齐国健
刘琦
徐现刚
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山东浪潮华光光电子股份有限公司
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Abstract

The invention discloses a GaAs-based LED chip cutting method. The method comprises the following steps: (1) semi-cutting is carried out on a P surface, criss-cross cutting grooves are formed, and chip P surface electrodes are separated at equal intervals; (2) the chip P electrodes face a white film downwardly, N electrodes face upwardly and are attached to the white film; (3) chip N surface scribing is carried out along the cutting grooves formed by P surface semi-cutting, and chip N surface stress is relieved; (4) film inverting is carried out on the scribed chip, and the chip is transferred to a blue film from the white film; and (5) on the chip N surface, a bonding tool of a chip breaking machine is used for chip breaking along scratches, and the chip is processed into independent crystal grains. The improved surface mount method is used, a cutting method which combines advantages of a chip sawing machine and a laser chip scribing machine is adopted, the chip P surface stress and the N surface stress are relieved maximally, deformation stress effects caused by film laminating can be reduced and edge collapse and pipe core breaking phenomena after the chip is cut are reduced, and the appearance quality after the chip is cut is improved.

Description

一种GaAs基LED芯片的切割方法 One kind of GaAs-based LED chip cutting methods

技术领域 FIELD

[0001] 本发明涉及一种LED (发光二极管)芯片的切割方法,属于LED芯片切割技术领域。 [0001] The present invention relates to a method of cutting LED (light emitting diode) chip, an LED chip dicing technical field belongs.

背景技术 Background technique

[0002] 在LED芯片制备工艺中,切割就是将经过光刻、镀膜、减薄等工艺制程后的整个芯片分割成所需求尺寸的单一晶粒的过程,这是半导体发光二极管芯片制备工艺中不可或缺的一道工序。 [0002] In the LED chip preparation process, the cutting is to be subjected to photolithography, plating, and other processes into the thin single crystal grain size of the entire chip needs of process technology, which is a semiconductor light emitting diode chip preparation process is not available or the lack of a process. 对于LED芯片,比较传统的也是现业界采用最广泛的切割方式是锯片切割。 For the LED chip, more traditional industry is now the most widely used way of cutting blade is cutting.

[0003] 锯片切割是用高速旋转(3-4r/min)的金刚刀按工艺需求设定好的程序将芯片完全锯开成单一的晶粒。 [0003] The cutting blade is rotated at high speed (3-4r / min) of the diamond knife predetermined procedures according to the process requirements of the chip completely sawed into individual die. 常规的GaAs基LED芯片的切割方法是先用金刚刀将芯片进行微切(半切),再用金刚刀沿半切刀痕进行全切断。 Conventional cutting methods GaAs-based LED chips of the first chip is a micro-cut (half-cut) with a diamond cutter, and then half-cut diamond knife edge cut full marks. 但是锯片切割存在一个不可避免的问题:GaAs材料比较脆,而且芯片正背面会蒸镀比较厚的金属材料,使得芯片本身的应力较大,再加上切割时切割刀直接接触芯片,这就使得芯片加工时容易破碎,芯片周围边缘容易产生崩边、崩角、裂纹等,影响芯片外观质量,降低良率。 However, there is a cutting blade inevitable question: GaAs materials are relatively brittle, and are deposited back surface of the chip would be a relatively thick metal material, so that the stress is large chip itself, in direct contact with the cutting blade when coupled with the cutting chip, which when processing such that the chip is easily broken, easily generated around the chip edge chipping, chipping, cracking, etc., affect the quality of the appearance of the chip, reducing the yield.

[0004] 激光切割是随着激光技术的发展而出现的一种新型的切割技术,主要有激光表面切割和隐形切割两种。 [0004] Laser cutting is a new cutting technology with the development of laser technology and the emergence of major surface laser cutting and stealth dicing two kinds. 激光切割是通过一定能量密度和波长的激光束聚焦在芯片表面或内部,通过激光在芯片表面或内部灼烧出划痕,然后再用裂片机沿划痕裂开。 Laser cutting by a laser beam of a certain wavelength and energy density focused on the chip surface or inside, scratches burning out or inside the laser chip surface and then split along the scribe machine lobes. 激光切割具有产能高、成品率高、自动化操作、成本低等优势。 Laser cutting with high productivity, high yield, automation and low cost. 但激光切割本身也存在一些问题,激光划片时,激光照射会破坏芯片的有源区,需要在芯片四周设置较宽的划线槽,由于划线槽里存在较厚的金属层,激光作用后,会产生大量的碎肩,划线槽边缘会出现喷涂、烧蚀现象,也限制了产能的提升,同时裂片机裂片时也会因金属材料的延展性出现难裂、双胞等现象。 Laser cutting themselves but there are some problems, laser scribing, laser irradiation destroys the active area of ​​the chip, to set a wider scribe groove around the chip, due to the presence of thicker metal layers in the scribe grooves, laser action , it will produce a lot of broken shoulder, a scribe groove edges will appear spraying, ablation phenomenon, also limits the lifting capacity, while at the same time machine lobes lobes also due to ductility of the metal material appears difficult to crack, twins and so on.

[0005] 中国专利文献CN102709171B公开的《GaAs基板超小尺寸LED芯片的切割方法》,包括:首先在芯片表面实行全面微切的步骤,半切的深度为芯片总体高度的10%〜20%,然后对芯片进行全透切割的步骤,即将半切后的芯片放置于切割机台上,用钻石刀将芯片从边沿开始沿切割道进行彻底分离的切割。 [0005] "method for cutting a GaAs substrate an ultra-small size of the LED chip" China Patent Document CN102709171B disclosed, comprising: first carry out step a comprehensive micro-cut surface of a chip, the half-cut depth of the chip generally 10% ~ 20% of the height, and Transmissive the chip cutting step, after the chip is about half-cutting cutter disposed on the table, with a diamond knife to cut chips from the rim completely separated along the scribe line starts. 但该方法的缺点是沿着半切的切割道进行全面透切割事,刀高必须降低,刀深加深,刀背与芯片表面接触面积增大,不可避免的会产生崩裂,不能有效的解决切割崩裂问题。 The disadvantage of this method is half-cut along the scribe cutting through round things, high blade must be reduced, cutter depth deepens, the blade back surface contact with the chip area is increased, chipping inevitably occur, can not effectively solve the problem of chipping cutter .

[0006] CN102709409B公开的《一种四元系LED芯片及其切割方法》,包括:第一步在LED芯片正极端一面用金刚石切割刀半切LED芯片,形成切割道,将等间距排列的LED芯片的正极端分隔开,第二步LED芯片的正极端贴上蓝膜,负极短贴上麦拉膜,第三步将LED芯片的正极端朝下,负极端朝上放置于劈裂机的劈裂台上,用劈裂机的劈裂刀沿切割道将LED芯片压断,LED芯片被加工成了一个个独立的晶粒。 [0006] CN102709409B disclosed "an LED chip and quaternary cutting process", comprising: a first step of the LED chip with a positive terminal side of the half-cut diamond cutting blade LED chip, forming scribe lines, and so the LED chips arranged at intervals spaced apart from the positive terminal, the positive terminal of the second step of the LED chip blue film paste, negative electrode paste short Mylar film, a third step the positive terminal of the LED chip facing down, is placed on the splitting up the negative terminal machine splitting stage, scribe pressure off the LED chip along with the splitting knife splitting machine, a LED chip is processed into individual grains. 但该方法的缺点是芯片正极用金刚石刀切,负极直接用劈裂刀劈裂,直接作用在芯片上的刚性力量大,芯片自身的翘曲应力也大,切割后的芯片出现崩裂、崩角的概率非常大。 The disadvantage of this method is the positive chip with a diamond knife, a negative electrode directly with the splitting knife splitting, rigid force acting directly on the chip is large, the chip itself is warping stress is large, chipping occurred chip after dicing, chipping the probability is very large.

[0007] CN104347760A公开的《一种LED芯片的切割方法》,包括:在芯片背面用激光划出划痕,用金刚石锯片刀沿划痕锯片,还包括将背切的芯片翻转倒膜,用裂片刀在芯片正面沿沟槽切割成一颗颗晶粒。 [0007] CN104347760A disclosed "a method of cutting the LED chip", comprising: a draw back surface of the chip with the laser scribe, diamond saw blade with a saw blade along the scribe, further comprising flip chip undercut inverted membrane, dolphin with lobes knife cut along the groove in the die chip front side. 但该方法的缺点是芯片背面用激光划出划痕后再用锯片刀直接切害J,划痕槽边缘并不光滑平整,容易造成锯片刀崩刀,导致崩裂,且制备的芯片是换衬底的芯片,不适用与常规工艺制备的芯片。 The disadvantage of this method is to draw back surface of the chip and then using the laser scribe saw blade knife cut directly harm J, the groove edge is not smooth scratches, chipping knife blade is likely to cause, leading to chipping, and chips are prepared in other substrate chip, the chip is not applicable to conventional preparation processes.

[0008] CN102079015A公开的《一种GaAs基LED芯片的激光切割方法》,包括:在GaAs芯片N面用激光切割形成激光划痕,然后在GaAs芯片P面用裂片机沿激光划痕将芯片裂开,形成激光划痕的深度为芯片厚度的1/10-4/5。 [0008] CN102079015A disclosed to "a GaAs-based LED chips laser cutting method", comprising: a GaAs chip with N laser cutting plane the laser scribe, and the GaAs chip surface P along with the laser scribe machine lobes chip cracking open, forming a laser scribe depth of the thickness of the chip 1 / 10-4 / 5. 但该方法的缺点是芯片N面激光划痕过深时,容易破坏芯片外延层结构,深度不足时,P面虽然尽可能最大的保留了原材料区域,但是GaAs材料的硬脆,自身应力较大,P面直接用裂片刀裂时,容易发生背裂。 The disadvantage of this method is to laser scribe the chip surface N is too deep, the chip is easy to damage the epitaxial layer structure, insufficient depth, P is the maximum possible surface while retaining the raw material region, but the hard and brittle material is GaAs, large stress itself , P side lobes when the knife directly crack, crack easily occurs back.

发明内容 SUMMARY

[0009] 针对现行芯片切割技术容易出现芯片崩边、裂管芯的问题,本发明提供一种能够避免出现崩边、裂管芯现象,提高切割后外观质量的GaAs基LED芯片的切割方法。 [0009] For the existing technology is prone to chip dicing chipping, cracking problem dies, the present invention provides a avoid chipping, cracking of the die cutting process, and to enhance the appearance quality after cutting GaAs-based LED chips.

[0010] 本发明的GaAs基LED芯片的切割方法,包括如下步骤: [0010] The method of cutting GaAs-based LED chip of the present invention, comprising the steps of:

[0011] (I)P面半切:在芯片P面进行全面半切,释放P面应力; [0011] (I) P plane half cut: Full half-cut surface of the chip P, P-plane stress is released;

[0012] (2)贴白膜:将芯片P电极向下朝向白膜,N电极向上,贴在白膜上; [0012] (2) attached to the tunica albuginea: P-electrode downwardly toward the chip albuginea, N electrode upward, attached to the tunica albuginea;

[0013] (3) N面划片:在芯片N面沿P面半切的切割槽进行激光划痕作业,释放芯片N面应力; [0013] (3) N dicing surface: laser scribe operation surface P along the half-cut dicing groove N chip surface, plane stress releasing N chips;

[0014] (4)倒膜:芯片P电极向下朝向白膜,N电极向上,芯片由白膜转移到蓝膜上; [0014] (4) film down: down toward the electrode chip albuginea P, N electrodes up to the blue chip transfer from the buffy coat film;

[0015] (5)在芯片N面用裂片机的劈刀沿步骤(3)中的划痕进行裂片,劈刀的刀深与P面半切深度融合,芯片被加工成独立的晶粒。 [0015] (5) in the riving knife with a chip surface N in step lobes scratches machine (3) lobes, the riving knife cutter depth and surface of the half-cut depth P fusion, the chip is processed to separate the grains.

[0016] 所述步骤(I)P面半切的具体过程是:先沿与芯片大解理边垂直的方向进行全面半切,再沿平行大解理边的方向进行全面半切,形成纵横交错的切割槽,将芯片P面电极等间距分隔开。 [0016] The step (I) P specific surface of the half-cut process: first a full half-cut along the chip edges in a direction perpendicular to relieve himself treatment, and then a full half-cut processing a bowel movement in a direction parallel edges, forming a criss-cross cut slot, the chip surface P equidistantly spaced apart electrodes.

[0017] 所述步骤(I)P面半切的刀高设定为120-150 μπι,切割速度为20-70mm/秒,锯片刀刀刃伸出量为550-600 μ m,切割槽宽度为15-20 μ m。 [0017] The step (I) P high side half-cut knife set 120-150 μπι, cutting speed 20-70mm / sec, the blade knife blade extending in an amount of 550-600 μ m, a width of the cutting grooves 15-20 μ m.

[0018] 所述步骤(I)P面半切的深度为芯片厚度的20%〜25%。 [0018] The step (I) P plane half-cut depth is 20% ~ 25% of the chip thickness.

[0019] 所述步骤(2)贴白膜时先将白膜在67_73°C烘烤5_10秒,使膜彻底舒张开,减小膜带来的形变应力影响。 [0019] The step (2) is first attached to the tunica albuginea tunica albuginea 67_73 ° C 5_10 second bake, the film is completely open relaxation, reducing stress of the film caused by the deformation.

[0020] 所述步骤(3)N面划片的激光功率为1.4-1.7胃,速度为70-80臟/8,划痕宽度为8-10 μmD [0020] The step (3) the laser power of the N face dicing 1.4-1.7 stomach, dirty speed of 70-80 / 8, a scratch width of 8-10 μmD

[0021] 所述步骤(3)N面划片的深度为芯片厚度的20%〜30%。 Depth [0021] The step (3) N face dicing is 20% ~ 30% of the chip thickness.

[0022] 所述步骤(4)倒膜作业前,先将蓝膜在67-73°C烘烤5_10秒,使蓝膜彻底舒张开,减小膜带来的形变应力影响。 [0022] The step (4) down before the film deposition operation, the first blue film baked at 67-73 ° C 5_10 seconds, complete relaxation of the blue film to open, reducing the stress of the film caused by the deformation.

[0023] 所述步骤(5)中裂片机劈刀刀刃厚度为8 μ m,劈刀刀痕宽度为10-15 μ m。 [0023] The step (5) in the edge thickness of the riving knife machine lobes 8 μ m, a width of riving knife marks 10-15 μ m.

[0024] 所述步骤(I)中切割槽形状、所述步骤(3)中划片的划痕形状以及所述步骤(5)中裂片机劈刀刀痕的形状都呈V型。 [0024] The step (I) cut the groove shape, the step (3) in the shape of scratches and dicing step shapes said machine riving knife marks were tested lobes V-shaped (5).

[0025] 本发明采用锯片机与激光划片机优势互取的组合切割方法,在芯片P面进行半切作业,N面先进行激光划片作业再进行裂片作业,最大限度释放了芯片P面应力和N面应力,充分释放了芯片内部的应力,且三种作业方式的切割槽形状都是V型,保证了不同切割状况下芯片受力的融合,切割后的芯片外观无崩边,裂管芯,边缘无毛刺,有效提高了切割后的芯片外观质量。 [0025] The present invention uses a combination of machine and the saw blade laser scribing machine taking advantage of cross-cutting method, the half-cut operation performed at the chip surface P, N laser scribing first face job then the job lobes, the maximum release of the chip surface P N-plane stress and stress, fully release the stress inside the chip, and the cutting grooves are V-shaped three kinds of operation mode, to ensure the integration of the force at different chip dicing conditions, the appearance of chips after dicing without chipping, cracking the die, the edge burr, improve the appearance quality of the diced chips.

附图说明 BRIEF DESCRIPTION

[0026] 图1是本发明芯片P面全面半切后的结构示意图。 [0026] FIG. 1 is a schematic view of the chip surface P of the present invention, the half-cut overall.

[0027] 图2是本发明芯片大解理边与小解理边两侧切割掉边缘区域后的示意图。 [0027] FIG. 2 is a schematic view of an edge region of the chip after a bowel movement principles of the invention and the side edge cut off both processing urinate.

[0028] 图3是本发明芯片N面激光划片后的结构示意图。 [0028] FIG. 3 is a schematic view of the structure after the N-face of the laser chip scribing the present invention.

[0029] 图4是本发明芯片N面裂片机裂片后的结构示意图。 [0029] FIG. 4 is a schematic diagram of the chip after the N-face machine lobes lobes of the present invention.

[0030] 图中:l、p面电极,2、外延层,3、半切刀痕,4、衬底,5、n面电极,6、大小解离边对准线槽,7、划痕,8、裂片机劈刀刀痕。 [0030] FIG.: L, p-side electrode, 2, an epitaxial layer 3, the half-cut marks, 4, the substrate, 5, n-side electrode 6, the size of the alignment groove edge dissociation, 7, scratches, 8, lobes chopper machine marks.

具体实施方式 detailed description

[0031] 本发明的GaAs基LED芯片的切割方法,具体包括如下步骤: [0031] The method of cutting GaAs-based LED chip of the present invention, includes the following steps:

[0032] (I)P面全面半切 [0032] (I) P round the half-cut surface

[0033] 将LED芯片的P面电极I向上放置于锯片机工作台上,选择半切作业程序后点击“全自动切割”,锯片机自动校准水平后开始切割,直至芯片CHl面和CH2面切割完成。 [0033] The P-side electrode of the LED chip is placed up to the blade unit I table, select operating procedures hemisection click "automatic cut", begin cutting blade automatically after calibration level, until the surface of the chip CHl and CH2 surface the cut is complete. 如图1所示。 As shown in Figure 1. 先沿与芯片大解理边垂直的方向进行全面半切,再沿平行大解理边的方向进行全面半切,形成纵横交错的切割槽,将芯片P面电极I等间距分隔开。 Full half cut first along a direction perpendicular to the chip edge processing bowel movement, then a full half-cut processing a bowel movement in a direction parallel sides, cutting grooves are formed criss-crossing the chip surface P I equidistantly spaced apart electrodes.

[0034] 切割初始进刀速度为lOmm/s,切割25刀后,可根据切割状况调整刀速20-70mm/s,锯片刀的刀高设定在120-150 μ m,锯片刀的刀刃伸出量为550-600 μ m。 [0034] The initial feed rate was cut lOmm / s, the cutting knife 25, the knife can be adjusted according to the cutting speed conditions 20-70mm / s, the blade knife blade set at a high 120-150 μ m, the blade knife an amount of blade projecting 550-600 μ m. 半切深度为芯片厚度的20%〜25%,由芯片P面电极I切至外延层2及衬底4 (参见图1),可保留芯片最大的原材料区域,且最大限度释放芯片P面应力。 Half-cut depth of 20% ~ 25% of the thickness of the chip, the chip surface of the electrode P I to cut the substrate 4 and the epitaxial layer 2 (see FIG. 1), the maximum chip raw material may be retained region, and the maximum surface stress release P chips. 半切刀痕3形成的切割槽呈V型,切割槽顶端宽度为15-20 μπι。 3 half-cut dicing groove cutter mark is formed V-shaped cut groove top width of 15-20 μπι.

[0035] (2)半切切割完成后,将芯片大解理边与小解理边两侧边缘区域切割掉,让芯片表面最外圈电极直接与边缘相切,提供激光划片时芯片校准平行的对准位置,如图2所示的大小解离边对准线槽6。 [0035] (2) half-cut dicing is completed, the edges of the chip sides urinate bowel movement processing area management side edges cut off, so that the outermost surface of the electrode chip and the edge tangent to directly provide parallel alignment laser scribing chip aligned position, the size of the solution shown in Figure 2 from the alignment groove 6 side.

[0036] (3)贴白膜,将芯片P电极向下,N电极向上贴在白膜上 [0036] (3) attached to the tunica albuginea, the P-electrode chip downwardly, N electrodes to the upward in the tunica albuginea

[0037] 将芯片P面向下放置于贴膜机加热盘上,芯片大解理边位置朝向加热盘右侧,通过贴膜机作业将芯片粘附在白膜上,P面朝膜,N面朝上。 [0037] The chip P is placed face down on a heated plate laminator, a bowel movement processing chip edge position toward the right side of the heating plate, the machine operation by the chip film adhered to the tunica albuginea, facing the film P, N on the face .

[0038] 作业前,改变以往直接用膜粘附芯片的常规做法,改变为先将膜烘烤一下,先将白膜烘烤一下,设置烘烤温度为67-73°C,烘烤5-10秒,使膜彻底舒张开,减小膜带来的形变应力影响。 [0038] before the job change the past, conventional practice the film is directly adhered to the chip, baking the film changed to a first bit, first bit albuginea baking, the baking temperature is set to 67-73 ° C, baking 5- 10 seconds, the film is completely open relaxation, reducing stress of the film caused by the deformation.

[0039] (4)激光N面划片 [0039] (4) N-face laser scribing

[0040] 将芯片放置于激光划片机工作台上,芯片P面超白膜,N面朝上。 [0040] placing the chip in the laser scribing machine worktable, the chip surface P over albuginea, N facing up. 根据芯片左右两侧切割出的对准标记(大小解离边对准线槽6)调平,设置激光器功率为1.4-1.7W,功率输出百分比为98%,划片速度为70-80mm/秒,焦距为8.3mm,晶粒布局为155 μπι,开始划片,形成的激光划痕的深度为芯片厚度的20%〜30%,划痕宽度为8-10 μ m,最大限度释放N面应力,如图3所示,激光划片的划痕7形状呈现V型。 The left and right sides of a chip cut out of alignment marks (the alignment groove side dissociation size 6) leveling, the laser power is set 1.4-1.7W, power output percentage of 98%, dicing speed of 70-80mm / sec focal length of 8.3mm, die layout 155 μπι, start scribing, the laser scribe depth is formed is 20% ~ 30% of the chip thickness, a scratch width of 8-10 μ m, the maximum surface stress releasing N As shown in FIG. 3, the laser scribing scratches 7 presents a V-shape.

[0041] (5)倒膜 [0041] (5) inverted membrane

[0042] 将贴在白膜上的芯片通过贴膜机进行倒膜作业,倒膜后的芯片粘附在蓝膜上,P面朝膜,N面向上,蓝膜倒膜作业前,依旧是先将蓝膜进行烘烤作业,烘烤温度为67-73Γ,烘烤5-10秒,使膜彻底舒张开,减小膜带来的形变应力影响。 Before [0042] will be attached to the inverted chip albuginea film by film machine working, after the die attach film on the inverted blue film, P facing the membrane, N faces, blue film inverted membrane job, first still the blue film baking operation, the baking temperature is 67-73Γ, baked 5-10 seconds, complete relaxation of the film to open, reducing the stress of the film caused by the deformation.

[0043] (6)将贴在蓝膜上的芯片放置在裂片机劈裂台上,裂片机劈刀刀刃厚度为8 μm,劈刀刀痕宽度为10-15 μ m。 [0043] (6) The blue film attached to the chip placement lobes splitting machine table, machine lobes chopper blade having a thickness of 8 μm, a width of riving knife marks 10-15 μ m. 芯片P面超蓝膜,N面朝上,沿激光划痕校准芯片水平,设置裂片机B-DEPTH (O)为5 μ m,B-DEPTH (90)为5 μ m,STEP 为155 μ m,BREAK SPEED 为8000 μ m/sec, SLIT WIDTH为160 μπι,然后点击开始进行裂片,沿芯片横丛两面划痕裂片,劈刀的刀深与P面半切深度融合,芯片就被加工成了一颗颗独立的晶粒,如图4所示,裂片机劈刀刀痕8的形状呈V型。 Blue film over the chip surface P, N on the face, the laser scribe alignment along the chip level, provided lobes machine B-DEPTH (O) is 5 μ m, B-DEPTH (90) is 5 μ m, STEP is 155 μ m , BREAK SPEED to 8000 μ m / sec, SLIT WIDTH to 160 μπι, and then click lobes begin, horizontal plexus along the chip scribe lobes on both sides, the riving knife cutter depth fused with the half-cut depth plane P, it was processed into a chip collections of independent grains, shown in Figure 4, the shape of lobes machine riving knife 8 of V-shaped marks.

Claims (10)

  1. 1.一种GaAs基LED芯片的切割方法,其特征是,包括如下步骤: (1)P面半切:在芯片P面进行全面半切,释放P面应力; (2)贴白I旲:将芯片P电极向下朝向白I旲,N电极向上,贴在白I旲上; (3)N面划片:在芯片N面沿P面半切的切割槽进行激光划痕作业,释放芯片N面应力; (4)倒膜:芯片P电极向下,N电极向上,芯片由白膜转移到蓝膜上; (5)在芯片N面用裂片机的劈刀沿步骤(3)中的划痕进行裂片,劈刀的刀深与P面半切深度融合,芯片被加工成独立的晶粒。 Cutting method for GaAs-based LED chip, wherein, comprising the steps of: (. 1) P plane half cut: a full half-cut chip P plane P release plane stress; (2) attached to White I Dae: chip P I Dae electrode down towards white, N up electrode, attached to the white I Dae; (. 3) N face dicing: laser scribe operation surface P along the half-cut dicing groove N chip surface, chip plane stress releasing N ; (4) down film: P-electrode chip downwardly, N electrode upwardly from the buffy coat to the blue chip transfer film; (5) along with the chopper machine scratches lobes step (3) in the chip surface N lobes, the chopper blade depth and half-cut depth plane P fusion, the chip is processed to separate the grains.
  2. 2.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(I) P面半切的具体过程是:先沿与芯片大解理边垂直的方向进行全面半切,再沿平行大解理边的方向进行全面半切,形成纵横交错的切割槽,将芯片P面电极等间距分隔开。 The cutting method of claim 1 GaAs-based LED chips as claimed in claim wherein, said step (I) P specific surface of the half-cut process: first a full half-cut along the chip edges in a direction perpendicular to relieve himself processing, bowel movement in a direction parallel direction and then a comprehensive treatment side half cut, cutting grooves are formed criss-crossing the chip surface P equidistantly spaced apart electrodes.
  3. 3.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(I) P面半切的刀高设定为120-150 μ m,切割速度为20-70mm/秒,锯片刀刀刃伸出量为550-600 μ m,切割槽宽度为15-20 μ m。 The cutting method of claim 1 GaAs-based LED chips as claimed in claim wherein, said step (I) P high side half-cut knife set 120-150 μ m, the cutting speed of 20-70mm / sec , the blade knife blade extending in an amount of 550-600 μ m, a width of the cutting grooves 15-20 μ m.
  4. 4.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(I) P面半切的深度为芯片厚度的20%〜25%。 The cutting method of claim 1 GaAs-based LED chips as claimed in claim wherein, said step (I) P plane half-cut depth is 20% ~ 25% of the chip thickness.
  5. 5.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(2)贴白膜时先将白膜在67-73°C烘烤5-10秒,使膜彻底舒张开,减小膜带来的形变应力影响。 The cutting method of claim 1 GaAs-based LED chips as claimed in claim, wherein said step (2) first albuginea baked at 67-73 ° C during 5-10 seconds paste albuginea, the membrane diastolic completely open, to reduce the stress of the film caused by the deformation.
  6. 6.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(3) N面划片的激光功率为1.4-1.7W,速度为70-80mm/s,划痕宽为8_10 μπι。 6. The cutting method of claim 1 GaAs-based LED chip according to claim, characterized in that the laser power of the step (3) N face dicing is 1.4-1.7W, speed of 70-80mm / s, scratches width 8_10 μπι.
  7. 7.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(3) N面划片的深度为芯片厚度的20%〜30%。 The cutting method of claim 1 GaAs-based LED chips as claimed in claim, wherein the depth of the step (3) N face dicing is 20% ~ 30% of the chip thickness.
  8. 8.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(4)倒膜作业前,先将蓝膜在67-73°C烘烤5-10秒,使蓝膜彻底舒张开,减小膜带来的形变应力影响。 8. The cutting method of claim 1 GaAs-based LED chips as claimed in claim, wherein said step (4) down before the film deposition operation, the first blue film was baked at 67-73 ° C 5-10 seconds, so that blue film diastolic completely open, to reduce the stress of the film caused by the deformation.
  9. 9.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤(5)中裂片机劈刀刀刃厚度为8 μm,劈刀刀痕宽度为10-15 μπι。 9. The cutting method according to 1 GaAs-based LED chip according to claim, wherein said step (5) the lobes of the machine riving knife edge thickness 8 μm, a width of riving knife marks 10-15 μπι.
  10. 10.根据权利要求1所述的GaAs基LED芯片的切割方法,其特征是,所述步骤⑴中切割槽形状、所述步骤(3)中划片的划痕形状以及所述步骤(5)中裂片机劈刀刀痕的形状都呈V型。 10. The cutting method of claim 1 GaAs-based LED chip according to claim, wherein said cutting step ⑴ groove shape, the shape of the scratches in step (3), and the dicing step (5) chopper machine marks lobes were tested V-shape.
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