CN113675079B - Transfer method and display device - Google Patents

Transfer method and display device Download PDF

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Publication number
CN113675079B
CN113675079B CN202010407747.4A CN202010407747A CN113675079B CN 113675079 B CN113675079 B CN 113675079B CN 202010407747 A CN202010407747 A CN 202010407747A CN 113675079 B CN113675079 B CN 113675079B
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transferred
wafer
release
glue
substrate
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CN113675079A (en
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李强
许时渊
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)

Abstract

The invention provides a transfer method and a display device, wherein the method comprises the following steps: partially cutting the cutting channels on the epitaxial layer to obtain a wafer to be transferred after cutting; fixing the transient substrate on the wafer to be transferred through first release glue, and removing the growth substrate; fixing the blue film on the wafer to be transferred through second release glue, and removing the transient substrate; and jacking up the blue film through the roller, so that the residual cutting channels on the wafer to be transferred automatically split under the action of stress. According to the method, the cutting channels on the epitaxial layer are partially cut, partial areas are reserved between the wafers to be transferred and are not cut, and during the transfer process of the wafers to be transferred, the partial uncut areas can block overflowing glue materials, so that the wafers to be transferred are prevented from being wrapped by the glue materials, and the transfer success rate of the LED chips is improved; the mutual acting force provided by the uncut area enables the relative position of the wafer to be transferred not to be changed, and the success rate of transferring the LED chip is further improved.

Description

Transfer method and display device
Technical Field
The invention belongs to the technical field of LED display, and particularly relates to a transfer method and a display device.
Background
The Micro Light Emitting Diode (Micro-LED) technology, namely the LED Micro-scaling and matrixing technology, has the advantages of good stability, service life and operation temperature, and also inherits the advantages of low power consumption, color saturation, high reaction speed, high contrast and the like of the LED, and the Micro-LED has higher brightness and lower power consumption, so that the Micro-LED has great application prospect.
In the production process of the existing LED display device, three transfers of LED chips on a growth substrate are required, specifically, the first transfer is to transfer the LED chips on the growth substrate to a first transient substrate, the second transfer is to transfer the LED chips on the first transient substrate to a second transient substrate, and the third transfer is to transfer the LED chips on the second transient substrate to a display backplane. And in the three transfer processes, photolysis and pyrolysis glue are required. However, the two glue materials have certain thickness and fluidity, and the thickness of the LED chip is only a few micrometers, so that the glue material is easy to overflow to wrap the LED chip, and the transfer success rate is low.
Therefore, the prior art is subject to further improvement.
Disclosure of Invention
In view of the defects in the prior art, the invention aims to provide a transfer method and a display device, which overcome the problem that in the existing LED chip transfer process, glue material overflow is easy to occur to wrap an LED chip, so that the LED chip transfer success rate is low.
In a first aspect, the present invention provides a transfer method, comprising: partially cutting a preset cutting channel on an epitaxial layer on a growth substrate to obtain a cut wafer to be transferred, wherein the cutting depth is smaller than the depth of the epitaxial layer; providing a transient substrate, wherein a first release adhesive is arranged on the transient substrate, the first release adhesive is adhered to the surface of the first side of the wafer to be transferred so as to adhere the wafer to be transferred to the transient substrate, and the growth substrate is peeled off; providing a blue film, wherein a second release adhesive is arranged on the blue film, the second release adhesive is adhered to the surface of the second side of the wafer to be transferred so as to adhere the wafer to be transferred to the blue film, and the transient substrate is peeled off, wherein the surface of the first side and the surface of the second side are arranged oppositely; and providing a roller, wherein the roller is arranged at the bottom of the blue film and is opposite to the wafer to be transferred, and the roller jacks up the blue film to ensure that the residual cutting channels on the wafer to be transferred automatically crack under the action of stress.
According to the transfer method, before the wafer is transferred, the preset cutting channels on the epitaxial layer on the growth substrate are partially cut, namely, a part of uncut area is reserved between the wafers to be transferred; in the wafer transferring process, part of uncut areas can block overflowing glue materials, so that the wafer to be transferred is prevented from being wrapped by the glue materials, and the LED chip transferring success rate is improved; the interaction force provided by the uncut area enables the relative position of the wafer not to be changed, and the success rate of transferring the LED chips is further improved.
Optionally, the remaining cutting lanes are V-shaped or U-shaped.
In the implementation process, after the roller jacks up the blue film, the uncut region at the lower end of the V-shaped residual cutting channel or the U-shaped residual cutting channel is thinner and can be preferentially broken under the action of stress, and the wafer to be transferred has a certain distance from the residual cutting channel, so that the edge of the wafer to be transferred cannot be damaged.
Optionally, adhering the first release glue to the surface of the first side of the wafer to be transferred to adhere the wafer to be transferred to the temporary substrate and peeling off the growth substrate includes: coating or pasting a first release adhesive on the transient substrate, and fixing the transient substrate on one surface of the wafer to be transferred, which is opposite to the growth substrate; and peeling the growth substrate through laser, and transferring the wafer to be transferred onto the transient substrate.
Optionally, the adhering the surface of the second side of the wafer to be transferred by the second release glue to adhere the wafer to be transferred to the blue film and peel off the transient substrate includes: coating or sticking a second release adhesive on the blue film, and fixing the blue film on one surface of the wafer to be transferred, which is opposite to the transient substrate; and peeling the transient substrate under the condition that the release condition of the second release adhesive is met, and transferring the wafer to be transferred to the blue film.
Optionally, providing a roller, where the roller is disposed at the bottom of the blue film and is disposed opposite to the wafer to be transferred, and jacking up the blue film through the roller to enable the remaining cutting streets on the wafer to be transferred to automatically split under the action of stress, includes: providing a roller, and placing the roller on one surface of the blue film far away from the wafer to be transferred; wherein the roller is positioned in the middle of the residual cutting path; and jacking up the blue film through the roller, so that the residual cutting channels on the wafer to be transferred are broken under the action of stress, and the wafer to be transferred is automatically cracked.
Optionally, the step of peeling off the growth substrate by laser and transferring the wafer to be transferred onto the transient substrate further includes: and cleaning one surface of the wafer to be transferred, which is in contact with the growth substrate, by hydrochloric acid. Residual metal gallium exists on the surface of the wafer to be transferred, which is in contact with the growth substrate, and the surface of the wafer to be transferred, which is in contact with the growth substrate, is cleaned, so that the wafer to be transferred can be conveniently transferred to the blue film in the subsequent steps.
Optionally, the release conditions of the first release glue and the second release glue are different. And under the condition that the release condition of the first release adhesive is met, the viscosity of the first release adhesive is reduced, and the viscosity of the second release adhesive is unchanged, so that the wafer to be transferred is transferred to the blue film.
Optionally, the first release glue is a photolysis glue, and the second release glue is a thermolysis glue; the peeling the transient substrate under the condition that the release condition of the second release glue is met comprises the following steps: and irradiating the transient substrate by laser to release the viscosity of the second release adhesive, so that the transient substrate is peeled off from the wafer to be transferred.
Optionally, the first release glue is a pyrolytic glue, and the second release glue is a photolysis glue; the peeling the transient substrate under the condition that the release condition of the second release glue is met comprises the following steps: and heating the transient substrate to release the viscosity of the second release adhesive, so that the transient substrate is peeled off from the wafer to be transferred.
In a second aspect, based on the same inventive concept, the invention further provides a display device, which comprises a display substrate fixed with the LED chip, wherein the LED chip is transferred by using the transfer method.
According to the display device, before the wafer is transferred, the preset cutting channels on the epitaxial layer on the growth substrate are partially cut, namely, a part of uncut area is reserved between the wafers to be transferred, and in the wafer transfer process, the part of uncut area can block overflowing glue material to prevent the wafers to be transferred from being wrapped by the glue material; the mutual acting force provided by the uncut area enables the relative position of the wafer to be transferred not to change, the success rate of transferring the LED chip is improved, the production cost of the display device is reduced, and the production efficiency of the display device is improved.
The transfer method and the display device have the advantages that the preset cutting channels on the epitaxial layer on the growth substrate are partially cut, and partial uncut areas are reserved between wafers to be transferred; the mutual acting force provided by the uncut area enables the relative position of the wafer to be transferred not to be changed, and the success rate of transferring the LED chip is further improved.
Drawings
FIG. 1 is a flow chart of a preferred embodiment of a transfer method according to the present invention;
fig. 2 is a schematic process diagram of a transfer method according to an embodiment of the invention.
Description of the reference numerals:
21-a growth substrate; 22-presetting a cutting path; 23-residual cutting path; 24-a wafer to be transferred; 25-first release glue; 26-a transient substrate; 27-a second release glue; 28-blue film.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the production process of the existing LED display device, three times of transfer of an LED chip on a growth substrate are needed, photolysis glue and pyrolysis glue are needed in the three times of transfer process, and the two glue materials have certain thickness and fluidity, and the thickness of the LED chip is only a few micrometers, so that glue overflow is easily generated to wrap the LED chip, and the transfer rate of the LED chip is low.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be set forth in the following embodiments.
Referring to fig. 1, the present invention provides a transferring method, specifically, the transferring method includes the following steps:
and S1, partially cutting the preset cutting path on the epitaxial layer on the growth substrate to obtain the cut wafer to be transferred, wherein the cutting depth is less than the depth of the epitaxial layer.
The preset cutting channels are formed by reserving a plurality of cutting channels after the epitaxy on the growth substrate is grown, so that the epitaxy can be sliced conveniently.
As an implementation manner, as shown in fig. 2, which is a schematic process diagram of a transfer method provided by an embodiment of the present invention, in order to solve the problem of glue overflow in the transfer process of an LED chip, after a wafer is prepared on a growth substrate 21, a predetermined cutting street 22 on an epitaxial layer on the growth substrate 21 is partially cut to obtain a wafer 24 to be transferred after cutting, and the cutting depth of the predetermined cutting street 22 is smaller than the depth of the epitaxial layer, a remaining cutting street 23 is formed between the wafers 24 to be transferred, and in the transfer process of the wafer 24 to be transferred, the remaining cutting street 23 can block the overflowing glue material to prevent the wafer 24 to be transferred from being wrapped by the glue material, so as to improve the transfer success rate of the LED chip; and the interaction force provided by the residual cutting channels 23 enables the relative position of the wafer 24 to be transferred not to be changed, and further improves the success rate of transferring the LED chips.
And S2, providing a transient substrate, wherein a first release adhesive is arranged on the transient substrate, the first release adhesive is adhered to the surface of the first side of the wafer to be transferred, so that the wafer to be transferred is adhered to the transient substrate, and the growth substrate is peeled.
As an embodiment, after partially cutting the predetermined scribe lines on the epitaxial layer on the growth substrate and forming the remaining scribe lines 23 between the wafers 24 to be transferred, a temporary substrate 26 is further provided, and the temporary substrate 26 is provided with a first release glue 25. The first release glue 25 is then adhered to the surface of the first side of the wafer 24 to be transferred, so that the wafer 24 to be transferred is adhered to the temporary substrate 26 by the first release glue 25. Finally, the growth substrate 21 is peeled off, and the wafer 24 to be transferred is transferred onto the transient substrate 26. In this process, although the first release paste 25 has a certain thickness and fluidity, the remaining scribe line 23 between the wafers 24 to be transferred can prevent the first release paste 25 from overflowing to wrap the wafers 24 to be transferred.
Alternatively, the first release glue 25 may be a photolytic glue or a pyrolytic glue.
In a specific embodiment, the step S2 specifically includes:
s21, coating or pasting a first release adhesive on the transient substrate, and fixing the transient substrate on the surface of the wafer to be transferred, which is opposite to the growth substrate;
and S22, peeling the growth substrate through laser, and transferring the wafer to be transferred to the transient substrate.
In specific implementation, the surface of the first side of the wafer 24 to be transferred is the surface of the wafer 24 to be transferred opposite to the growth substrate 21, the preset cutting street 22 on the epitaxial layer on the growth substrate 21 is partially cut to obtain the cut wafer 24 to be transferred, the transient substrate 26 is coated or pasted with the first release glue 25, and the transient substrate 26 is fixed on the surface of the wafer 24 to be transferred opposite to the growth substrate 21 through the first release glue 25; the wafer 24 to be transferred is then transferred onto the transient substrate 26 by Laser Lift Off (Laser Lift Off) of the growth substrate 21. In this process, although the first release paste 25 has a certain thickness and fluidity, the remaining scribe lines 23 remained between the wafers 24 to be transferred can prevent the first release paste 25 from overflowing to wrap the wafers 24 to be transferred.
In a specific embodiment, after the step S22, the method further includes:
and S23, cleaning one surface of the wafer to be transferred, which is in contact with the growth substrate, through hydrochloric acid.
In specific implementation, after the growth substrate 21 is stripped by laser, residual gallium metal exists on a surface of the wafer 24 to be transferred, which is in contact with the growth substrate 21, and in order to fix the blue film 28 on the wafer 24 to be transferred through the second release glue 27 in the subsequent step, in this embodiment, hydrochloric acid is further used to clean the surface of the wafer 24 to be transferred, which is in contact with the growth substrate 21, so as to remove the residual gallium metal. Since concentrated hydrochloric acid is corrosive, in order to avoid corrosion of the wafer 24 to be transferred by hydrochloric acid, in this embodiment, dilute hydrochloric acid is used to clean the surface of the wafer 24 to be transferred, which is in contact with the growth substrate 21.
In specific implementations, the first release glue 25 and the second release glue 27 include, but are not limited to, UV photolysis glue, pyrolytic glue, and cold-decomposition glue. And the release conditions of the first release adhesive 25 and the second release adhesive 27 are different, so that the transient substrate 26 can be removed under the condition that the release conditions of the first release adhesive 25 are met, and the second release adhesive 27 is not affected.
S3, providing a blue film, wherein a second release adhesive is arranged on the blue film, the second release adhesive is adhered to the surface of the second side of the wafer to be transferred, so that the wafer to be transferred is adhered to the blue film, and the transient substrate is peeled off, wherein the surface of the first side and the surface of the second side are arranged oppositely;
in practical implementation, after the wafer 24 to be transferred is transferred onto the transient substrate 26, a blue film 28 is further provided, and the blue film 28 is provided with a second release adhesive 27. And then adhering a second release glue 27 to the surface of a second side of the wafer 24 to be transferred, which is opposite to the surface of the first side, so that the wafer 24 to be transferred is adhered to the blue film 28 through the second release glue 27. Finally, the temporary substrate 26 is peeled off, and the wafer 24 to be transferred is transferred onto the blue film 28. In this process, although the second release paste 27 has a certain thickness and fluidity, the remaining scribe line 23 between the wafers 24 to be transferred can prevent the second release paste 27 from overflowing to wrap the wafers 24 to be transferred.
Alternatively, the second release glue 27 may be a pyrolytic glue or a photolytic glue.
Note that the first release glue 25 and the second release glue 27 are different glues. That is, when the first release glue 25 is a photolysis glue, the second release glue 27 is a thermal release glue. On the contrary, when the first release glue 25 is a thermal release glue, the second release glue 27 is a photolysis glue.
In a specific embodiment, the step S3 specifically includes:
s31, coating or pasting a second release adhesive on the blue film, and fixing the blue film on one surface of the wafer to be transferred, which is opposite to the transient substrate;
s32, removing the transient substrate, and transferring the wafer to be transferred to the blue film.
In specific implementation, the surface of the second side of the wafer 24 to be transferred is a surface of the wafer 24 to be transferred opposite to the transient substrate 26, after the wafer 24 to be transferred is transferred onto the transient substrate 26, a second release glue 27 is further coated or attached on the blue film 28, and the blue film 28 is fixed on the surface of the wafer 24 to be transferred opposite to the transient substrate 26 through the second release glue 27; the temporary substrate 26 is then removed and the wafer 24 to be transferred is transferred onto the blue film 28. In this process, although the second release glue 27 has a certain thickness and fluidity, the remaining scribe line 23 between the wafers 24 to be transferred can prevent the second release glue 27 from overflowing to wrap the wafers 24 to be transferred.
In one embodiment, the first release glue 25 is photolyzed glue, the second release glue 27 is thermal decomposed glue, and the step of removing the transient substrate in step S32 specifically includes:
s321, irradiating the transient substrate by laser, and releasing the viscosity of the second release adhesive to peel the transient substrate from the wafer to be transferred.
In specific implementation, when the first release glue 25 is photolysis glue and the second release glue 27 is thermal release glue, after the blue film 28 is fixed on the surface of the wafer 24 to be transferred opposite to the transient substrate 26 by the second release glue 27, the transient substrate 26 is illuminated, and the first release glue 25 is decomposed under the illumination condition, so that the wafer 24 to be transferred is separated from the transient substrate 26, and the wafer 24 to be transferred is transferred onto the blue film 28. In one embodiment, the wafer 24 to be transferred is transferred to the blue film 28 by irradiating the temporary substrate 26 with a laser having a wavelength of 266nm to reduce the viscosity of the first release glue 25 on the temporary substrate 26.
In one embodiment, the first release glue 25 is a pyrolytic glue, the second release glue 27 is a pyrolytic glue, and the step of removing the transient substrate in step S32 specifically includes:
s321', heating the transient substrate to release the viscosity of the second release paste, so that the transient substrate is peeled off from the wafer to be transferred.
In specific implementation, when the first release glue 25 is thermal release glue and the second release glue 27 is optical release glue, after the blue film 28 is fixed on the surface of the wafer 24 to be transferred opposite to the transient substrate 26 through the second release glue 27, the transient substrate 26 is heated, and the first release glue 25 is decomposed under a heating condition, so that the wafer 24 to be transferred is separated from the transient substrate 26, and the wafer 24 to be transferred is transferred onto the blue film 28.
In a specific embodiment, after the step S3, the method further includes:
s41, providing a roller, and placing the roller on one surface of the blue film far away from the wafer to be transferred; wherein the roller is positioned in the middle of the residual cutting path;
and S42, jacking the blue film through the roller, and enabling the residual cutting channels on the wafer to be transferred to be broken under the action of stress so as to automatically split the wafer to be transferred.
In specific implementation, the remaining scribe line 23 is a V-shaped scribe line or a U-shaped scribe line, and after the wafer 24 to be transferred is transferred to the blue film 28, the blue film 28 is further jacked up by using a roller to split the wafer 24 to be transferred. Specifically, a roller is placed on a side of the blue film 28 away from the wafer 24 to be transferred, and the roller is located in the middle of the remaining scribe line 23; and then, jacking up the blue film 28 through a roller, and splitting a plurality of wafers 24 to be transferred on the blue film 28. Since the uncut region at the lower end of the V-shaped residual scribe line 23 or the U-shaped residual scribe line 23 is thin, it will break preferentially, and the rollers must stop pushing up after breaking to prevent the wafer 24 to be transferred from breaking. In addition, in the process of splitting the wafer 24 to be transferred, the remaining cutting street 23 is at a certain distance from the wafer 24 to be transferred, so that the edge of the wafer 24 to be transferred is not damaged.
And S4, providing a roller, wherein the roller is arranged at the bottom of the blue film and is opposite to the wafer to be transferred, and jacking the blue film through the roller so that the residual cutting streets on the wafer to be transferred can be automatically cracked under the action of stress.
In specific implementation, after the wafer 24 to be transferred is transferred onto the blue film 28, a roller is further provided, the roller is placed at the bottom of the blue film 28, and the roller is arranged opposite to the wafer 24 to be transferred; and then the blue film 28 is jacked up by the roller, and the residual cutting channels 23 are broken under the action of stress, so that the wafer 24 to be transferred is automatically split. Since the remaining scribe line 23 is spaced from the wafer 24 to be transferred, the edge of the wafer 24 to be transferred is not damaged.
In a specific embodiment, the step S1 is preceded by:
s01, providing a growth substrate;
and S02, forming an epitaxial layer on the growth substrate.
In specific implementation, in this embodiment, a growth substrate 21 is first provided, where the growth substrate 21 may include but is not limited to sapphire, silicon carbide, or silicon; then, an epitaxial layer is formed on the growth substrate 21 by means of MOCVD or the like; and finally, etching, electrode growing, thinning and the like are carried out on the epitaxial layer, and the wafer fixed on the growth substrate 21 is prepared.
In a specific embodiment, the present embodiment further provides a display device, where the display device includes a display substrate fixed with LED chips, and the LED chips are transferred by using the above transfer method, and before the transfer method transfers the LED chips, a preset dicing channel on an epitaxial layer on a growth substrate is partially cut, that is, a part of uncut area is reserved between the wafers to be transferred, and the part of uncut area can block an overflowing glue material, so as to prevent the wafers to be transferred from being wrapped by the glue material; the relative position of the wafer to be transferred cannot be changed due to the interaction force provided by the uncut area, the success rate of transferring the LED chip is improved, the production cost of the display device is reduced, and the production efficiency of the display device is improved.
In summary, the present invention provides a transferring method and a display device, wherein the transferring method includes: partially cutting a preset cutting channel on an epitaxial layer on a growth substrate to obtain a cut wafer to be transferred, wherein the cutting depth is smaller than the depth of the epitaxial layer; providing a transient substrate, wherein a first release adhesive is arranged on the transient substrate, the first release adhesive is adhered to the surface of the first side of the wafer to be transferred so as to adhere the wafer to be transferred to the transient substrate, and the growth substrate is peeled off; providing a blue film, wherein a second release adhesive is arranged on the blue film, the second release adhesive is adhered to the surface of the second side of the wafer to be transferred so as to adhere the wafer to be transferred to the blue film, and the transient substrate is peeled off, wherein the surface of the first side and the surface of the second side are arranged oppositely; and providing a roller, wherein the roller is arranged at the bottom of the blue film and is opposite to the wafer to be transferred, and the roller jacks up the blue film to ensure that the residual cutting channels on the wafer to be transferred automatically crack under the action of stress. According to the method, the preset cutting channels on the epitaxial layer on the growth substrate are partially cut, a part of uncut area is reserved between the wafers to be transferred, and the part of uncut area can block overflowing glue materials in the transfer process of the wafers to be transferred, so that the wafers to be transferred are prevented from being wrapped by the glue materials, and the transfer success rate of the LED chips is improved; the mutual acting force provided by the uncut area enables the relative position of the wafer to be transferred not to be changed, and the success rate of transferring the LED chip is further improved.
It will be understood that the invention is not limited to the examples described above, but that modifications and variations will occur to those skilled in the art in light of the above teachings, and that all such modifications and variations are considered to be within the scope of the invention as defined by the appended claims.

Claims (10)

1. A method of transferring, comprising:
partially cutting a preset cutting channel on an epitaxial layer on a growth substrate to obtain a cut wafer to be transferred, wherein the cutting depth is smaller than the depth of the epitaxial layer;
providing a transient substrate, wherein a first release adhesive is arranged on the transient substrate, the first release adhesive is bonded with the surface of the first side of the wafer to be transferred so as to adhere the wafer to be transferred on the transient substrate, and the growth substrate is peeled;
providing a blue film, wherein a second release adhesive is arranged on the blue film, the second release adhesive is adhered to the surface of the second side of the wafer to be transferred so as to adhere the wafer to be transferred to the blue film, and the transient substrate is peeled off, wherein the surface of the first side and the surface of the second side are arranged oppositely;
and providing a roller, wherein the roller is arranged at the bottom of the blue film and is opposite to the wafer to be transferred, and the roller jacks up the blue film to ensure that the residual cutting channels on the wafer to be transferred automatically crack under the action of stress.
2. The transfer method of claim 1, wherein the remaining cutting lanes are V-shaped or U-shaped.
3. The transfer method according to claim 2, wherein the adhering of the surface of the first side of the wafer to be transferred by the first release glue to adhere the wafer to be transferred to the temporary substrate and to peel off the growth substrate comprises:
coating or pasting a first release adhesive on the transient substrate, and fixing the transient substrate on one surface of the wafer to be transferred, which is opposite to the growth substrate;
and peeling the growth substrate through laser, and transferring the wafer to be transferred onto the transient substrate.
4. The transfer method according to claim 3, wherein the adhering the wafer to be transferred to the blue film by the second release glue and the surface of the second side of the wafer to be transferred, and peeling off the transient substrate comprises:
coating or pasting a second release adhesive on the blue film, and fixing the blue film on one surface of the wafer to be transferred, which is opposite to the transient substrate;
and peeling the transient substrate under the condition that the first release glue is released, and transferring the wafer to be transferred onto the blue film.
5. The method as claimed in claim 2, wherein the providing a roller disposed at the bottom of the blue film and opposite to the wafer to be transferred, the roller being used to lift up the blue film, so that the remaining scribe lines on the wafer to be transferred are automatically cracked under the action of stress, comprises:
providing a roller, and placing the roller on one surface of the blue film far away from the wafer to be transferred; wherein the roller is positioned in the middle of the residual cutting path;
and jacking up the blue film through the roller, so that the residual cutting channels on the wafer to be transferred are broken under the action of stress, and the wafer to be transferred is automatically cracked.
6. The transfer method according to claim 3, further comprising, after the step of transferring the wafer to be transferred onto the transient substrate by laser lift-off of the growth substrate, the step of:
and cleaning one surface of the wafer to be transferred, which is contacted with the growth substrate, by hydrochloric acid.
7. The transfer method according to claim 4, wherein the release conditions of the first release glue and the second release glue are different.
8. The transfer method according to claim 7, wherein the first release glue is a photolysis glue and the second release glue is a thermolysis glue;
the peeling the transient substrate under the condition that the first release glue is released comprises the following steps:
and irradiating the transient substrate by laser to release the viscosity of the first release adhesive, so that the transient substrate is peeled off from the wafer to be transferred.
9. The transfer method according to claim 7, wherein the first release glue is a thermal release glue and the second release glue is a photolysis glue;
the peeling the transient substrate under the condition that the first release glue is released comprises the following steps:
and heating the transient substrate to release the viscosity of the first release adhesive, so that the transient substrate is peeled off from the wafer to be transferred.
10. A display device comprising a display substrate having LED chips fixed thereto, wherein the LED chips are transferred by the transfer method according to any one of claims 1 to 9.
CN202010407747.4A 2020-05-14 2020-05-14 Transfer method and display device Active CN113675079B (en)

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