CN116314540A - Substrate stripping and bonding method of micro-LED chip - Google Patents
Substrate stripping and bonding method of micro-LED chip Download PDFInfo
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- CN116314540A CN116314540A CN202310340456.1A CN202310340456A CN116314540A CN 116314540 A CN116314540 A CN 116314540A CN 202310340456 A CN202310340456 A CN 202310340456A CN 116314540 A CN116314540 A CN 116314540A
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- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000005516 engineering process Methods 0.000 claims abstract description 22
- 238000012546 transfer Methods 0.000 claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000003825 pressing Methods 0.000 claims abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 19
- 239000010980 sapphire Substances 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a substrate stripping and bonding method of a micro-LED chip. For transferring the micro-LED chip, a series of grooves are engraved on the micro-LED chip substrate, BOE etching solution is injected into the grooves to etch the silicon dioxide array between the substrate and the epitaxial wafer, the substrate is removed through laser stripping and other technologies after the bonding force between the substrate and the epitaxial wafer is reduced, and the substrate stripping of the micro-LED chip is realized. The circuit board is moved to the upper part of the wafer, the wafer is aligned by the circuit board, the solder is melted by the heating circuit board, the circuit board and the wafer are connected together by applying pressure, and the substrate is peeled off by the substrate peeling technology, so that the bonding and the transferring of the chip are realized. The micro-LED chip substrate can be peeled off and transferred to the circuit board, and the micro-LED chip substrate transfer device has the characteristics of high efficiency and high precision.
Description
Technical Field
The invention relates to the technical field of semiconductor display, in particular to a substrate stripping and bonding method of a micro-LED chip.
Background
Micro-LED chips generally refer to inorganic light emitting diode devices (Light Emitting Diode, LEDs) with chip sizes below 50 μm, and Micro-LED chips can be used for light emitting pixels, as self-luminous units, and can be used in the field of display technology. The surface of the micro-LED chip for display is smaller than 50 mu m multiplied by 50 mu m, the thickness of the substrate is tens or even hundreds of mu m, and at the moment, the thickness of the micro-LED chip is longer and wider and larger, so that the bonding stability of the micro-LED chip is affected to a certain extent. In addition, the thermal expansion coefficients of the sapphire substrate and the GaN material are inconsistent, and the sapphire substrate and the GaN material have a certain influence on heat dissipation of the micro-LED chip. Moreover, thicker sapphire will result in more severe sidewall light extraction, which can cause optical crosstalk between adjacent micro-LED chips.
In order to manufacture the micro-LED display device, the sapphire substrate on the micro-LED chip needs to be peeled off. Meanwhile, as a single pixel point, the micro-LED chip needs to be integrated on a circuit board, namely, the micro-LED chip and the circuit board are bonded together. At present, the direct laser stripping technology is adopted to damage GaN materials, so that the luminous efficiency of the chip is reduced, and therefore, the development of a novel substrate stripping method plays an important role in preparing the high-performance micro-LED chip. Meanwhile, because the micro-LED chip size is in the micro-scale, batch transfer of single micro-LED chips to the circuit board is very difficult, and the micro-scale micro-LED chips and the circuit board are also very challenging to bond together. How to achieve efficient and low cost transfer and bonding is therefore a technical problem of the current major research.
Disclosure of Invention
Aiming at the defect that the prior art directly uses a laser stripping method, the invention provides a substrate stripping and bonding method of a micro-LED chip, namely a substrate stripping method of the micro-LED chip and a bonding method of the chip and a circuit board, so as to solve the problems that the substrate stripping technology of the micro-LED chip causes high damage to a GaN material in the prior art, and the micro-LED chip has huge transfer efficiency and the bonding of the micro-LED chip and the circuit board is difficult. After the silicon dioxide is corroded by using the BOE solution, the damage of laser stripping to GaN is reduced by using a laser stripping technology.
In order to achieve the above object, the present invention provides a method for peeling and bonding a substrate of a micro-LED chip, characterized in that: micromachining a micro-LED chip, and providing a novel micro-LED chip substrate stripping method; and (3) moving the wafer with the micro-LEDs onto the micro-LED chip circuit board, and bonding after alignment, so that the huge transfer of the micro-LED chips is realized.
Link 1: substrate peeling
S1: for the micro-LED chip, the substrate stripping process comprises the following steps:
s1.1) taking micro-LED chip, wherein the chip grows a layer of periodical patterned SiO on the sapphire substrate 2 An array;
s1.2) punching holes on the bottom surface of the micro-LED chip, namely the sapphire substrate surface, and carving grooves until the grooves just reach the patterned SiO 2 An array;
s1.3) through the drilled grooves, injecting BOE solution into the grooves, and the solution and the patterned SiO 2 Array reaction, corrosion removal of SiO 2 In the original graphical SiO 2 And holes are left at the array, so that the binding force between the sapphire substrate and the LED epitaxial wafer is reduced. Then clean water is used for cleaning the BOE solution;
s1.4) removal of patterned SiO 2 The substrate is peeled off, and the film micro-LED chip is arranged after the peeling off.
Preferably, in the micro-LED chip of the step S1.1, siO is patterned periodically 2 The diameter of the bottom of the array is 2-5 μm, and the height is 1-3 μm.
Further, in the step S1.2, the sapphire substrate surface is perforated to form a trench, and the method adopted is laser perforation; etching by lithography; one of the methods is to etch the trench by an acidic material such as hydrochloric acid.
Further, in the step S1.3, the BOE solution is injected into the trench, and the micro-LED chip is placed in the BOE solution for 60-180 seconds.
In the step S1.3, deionized water is used for cleaning the BOE solution by using clear water, and the cleaning time is 5 minutes.
Further, in the step S1.4, the sapphire substrate of the micro-LED chip is peeled off by laser peeling; stripping by a chemical method; mechanical grinding, and the like.
Link 2: bonding of chips and circuit boards
S2: the bonding method of the micro-LED chip comprises the following steps:
s2.1) taking a circuit board, wherein the circuit board comprises a glass substrate, a circuit pattern and the like;
s2.2) dropwise adding Au/Sn solder on the circuit pattern;
s2.3) inverting the micro-LED wafer and then approaching the circuit board. Each Micro-LED chip on the Micro-LED wafer has been isolated;
s2.4) aligning micro-LED chips on the wafer with circuit patterns on the circuit board, and then moving the circuit board at a lower speed to contact the circuit board with the wafer;
s2.5) heating and pressing the circuit board and the wafer to enable Au/Sn solder on the circuit board to be melted, and then connecting the circuit board with a bonding pad of the micro-LED chip;
s2.6) peeling the wafer substrate by using one of a peeling technology, a laser peeling technology, a chemical peeling technology, a mechanical grinding technology and the like, thereby realizing the bonding and the transfer of the micro-LED chip and the circuit board.
Compared with the prior art, the invention has the following advantages:
the invention carries out micro-processing on a micro-LED chip and provides a novel micro-LED chip substrate stripping method; and moving the micro-LED chip circuit board to a wafer with micro-LEDs, and bonding after alignment, so as to realize the mass transfer of the micro-LED chips.
The method firstly removes SiO between the sapphire substrate and the GaN epitaxial layer by using the BOE solution 2 The array reduces the binding force between the substrate and the GaN material, so that the substrate stripping is simpler, and the damage to the GaN material during the substrate stripping is reduced. Secondly, the invention aligns the circuit board with the wafer, keeps the wafer motionless, moves the circuit board to align with the wafer, and then peels off the sapphire substrate of the wafer, so that the single micro-LED chip and the circuit board can be successfully bonded. Compared with the prior method of manufacturing single micro-LEDs and transferring a large number of single micro-LEDs to a circuit board, the method reducesThe step of moving a single micro-LED chip reduces the difficulty of mass transfer.
The transfer method provided by the invention can be applied to the field of display manufacturing, has an important effect on the manufacturing of micro-LED displays, and has great significance in display equipment such as watches, VR, smart phones and the like.
Drawings
FIG. 1 is a structural diagram of a micro-LED chip of the present invention;
FIG. 2 is a schematic flow chart of the micro-LED chip peeling substrate of the invention;
FIG. 3 is a block diagram of a micro-LED display circuit board of the present invention;
fig. 4 is a schematic diagram of a micro-LED display circuit board of the present invention with solder added;
fig. 5 is a schematic view of micro-LED chips grown on a wafer substrate according to the present invention.
Fig. 6 is a schematic diagram of the alignment of the micro-LED chip and the circuit board according to the present invention.
Fig. 7 is a schematic diagram showing the contact between the micro-LED chip and the circuit board.
Fig. 8 is a schematic diagram showing the connection of the micro-LED chip and the circuit board and the peeling of the substrate of the micro-LED chip according to the present invention.
Fig. 9 is a schematic diagram of the circuit board of the present invention after bonding with the micro-LED chip.
In the figure: 1. trench, 2, substrate, 3, patterned SiO 2 Array, 4, n-GaN,5, MQWs,6, p-GaN,7, ITO,8, siO 2 Current blocking layer 9, DBR,10, p-pad, 11, p-electrode, 12, n-pad, 13, siO 2 Insulating layer, 14, n electrode, 15, circuit pattern, 16, glass substrate, 17, au/Sn solder, 18, micro-LED chip.
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings and specific embodiments.
Example 1
As shown in fig. 1, a manufacturing process of depositing a layer of magnetic metal on top of a flip-chip micro-LED chip is shown.
In this embodiment, referring to fig. 2, the micro-LED chip substrate peeling method specifically includes the following steps:
firstly, a groove is carved on the substrate surface of a micro-LED chip, and the groove is positioned on SiO 2 Below the array. The method of etching the trench is one of the methods of laser drilling, etching by photolithography, etching the trench by acidic substances such as hydrochloric acid, and the like. And then injecting BOE solution into the groove, wherein the micro-LED chip wafer is placed into the BOE solution for 60-180 seconds. The BOE solution was then rinsed off by using deionized water for a period of 5 minutes. At this time, siO between the substrate and the epitaxial wafer 2 Has been completely etched, reducing the bonding force between the substrate and the epitaxial wafer. And then peeling the substrate of the micro-LED chip by one of laser peeling, chemical peeling, mechanical grinding and the like.
Example 2
In this embodiment, the bonding and micro-LED chip transferring method of the micro-LED chip, see fig. 3 to 9, specifically includes the following steps:
s2.1) taking a circuit board, wherein the circuit board comprises a glass substrate, a circuit pattern and the like, as shown in FIG. 3;
s2.2) dropwise adding Au/Sn solder on the circuit pattern, as shown in FIG. 4;
s2.3) inverting the micro-LED wafer and then approaching the circuit board. Each Micro-LED chip on the Micro-LED wafer has been isolated, as shown in fig. 6;
s2.4): aligning micro-LED chips on the wafer with circuit patterns on the circuit board, and then moving the circuit board at a lower speed to contact the circuit board with the wafer, as shown in FIG. 7;
s2.5): heating and pressing the circuit board and the wafer to melt the Au/Sn solder on the circuit board and then connecting with the bonding pad of the micro-LED chip, as shown in FIG. 8;
s2.6): the wafer substrate is peeled off by using one of a laser peeling technology, a chemical peeling technology, a mechanical grinding technology, and the like through a peeling technology, so that the micro-LED chip and the circuit board are bonded and transferred, as shown in fig. 9.
The technical principle of the invention is as follows:
the micro-LED substrate stripping method of the invention comprises the steps of firstly etching SiO between the substrate and the GaN epitaxial layer 2 And the material reduces the binding force between the substrate and the GaN. Firstly, a groove is carved on the substrate surface of a micro-LED chip, and the groove is positioned on SiO 2 Below the array. And injecting BOE solution into the groove, and cleaning the BOE solution by using deionized water after the corrosion is completed. And then peeling the substrate of the micro-LED chip by one of laser peeling, chemical peeling, mechanical grinding and the like. The invention utilizes BOE solution to remove SiO between the sapphire substrate and the GaN epitaxial layer 2 The array reduces the binding force between the substrate and the GaN material, so that the substrate stripping is simpler, and the damage to the GaN material during the substrate stripping is reduced.
Compared with the prior art, the preparation technology for realizing the recycling of the sapphire substrate is characterized in that a sacrificial layer is specially grown on the LED structure, and then the sacrificial layer is removed to realize stripping. According to the technical scheme, a sacrificial layer is not specially grown, silicon dioxide between GaN and sapphire is removed, and then the substrate is stripped by laser stripping.
Compared with the prior art, the temporary bonding technology is to temporarily bond on a substrate, scribe and convert the epitaxial GaN on the whole wafer into a single chip, and the transfer is not involved. The invention is that the single chip is manufactured on the wafer, then the whole wafer is bonded with the circuit substrate, then the substrate is peeled off by adopting the substrate peeling technology, and then the micro-LED chip is directly connected with the circuit board without transferring the single chip.
The bonding and chip transferring method provided by the invention realizes the bonding of the micro-LED chip and the circuit board and the transferring of the micro-LED chip by keeping the wafer motionless and moving the circuit board. Firstly, au/Sn solder is dripped on a circuit pattern of a circuit board, a micro-LED wafer is close to and aligned with the circuit board, and the wafer is contacted with the circuit board. The circuit board and the wafer are heated and pressed to melt the Au/Sn solder on the circuit board and then connected with the bonding pad of the micro-LED chip. And stripping the wafer substrate by a stripping technology, so as to realize the bonding and transfer of the micro-LED chip and the circuit board. Secondly, the wafer is aligned with the circuit board, the circuit board is kept motionless, the wafer is moved to align with the circuit board, namely micro-LED chips on the whole wafer are transferred without transferring each small micro-LED chip, the step of moving the micro-LED chips is reduced, and the difficulty of massive transfer is reduced. Finally, the substrate is peeled off by the substrate peeling technique of example 1, at which time the micro-LEDs on the entire wafer are separated.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present invention.
Claims (6)
1. A substrate stripping and bonding method of micro-LED chips is characterized in that: the micro-LED chip circuit board is moved to a wafer with micro-LEDs, bonding is carried out after alignment, and massive transfer of the micro-LED chips is realized through transferring the wafer; the method comprises 2 links, namely substrate stripping and bonding of chips and a circuit board:
s1: for micro-LED chip individuals, the substrate stripping process comprises the following steps:
s1.1) taking micro-LED chip, wherein the chip grows a layer of periodical patterned SiO on the sapphire substrate 2 An array;
s1.2) punching holes on the bottom surface of the micro-LED chip, namely the surface of the sapphire substrate, and punching grooves until the grooves just reach the graphical SiO 2 An array;
s1.3) through the drilled grooves, injecting BOE solution into the grooves, and the solution and the patterned SiO 2 Array reaction, corrosion removal of SiO 2 In the original graphical SiO 2 Holes are left at the array, so that the binding force between the sapphire substrate and the LED epitaxial wafer is reduced; then clean water is used for cleaning the BOE solution;
s1.4) removal of patterned SiO 2 The micro-LED chip is subjected to substrate stripping, and the thin film micro-LED chip is arranged after the substrate stripping;
s2: the method for bonding the chip and the circuit board specifically comprises the following steps:
s2.1) taking a circuit board, wherein the circuit board comprises a glass substrate, a circuit pattern and the like;
s2.2) dropwise adding Au/Sn solder on the circuit pattern;
s2.3) inverting the micro-LED wafer and approaching the circuit board; each Micro-LED chip on the Micro-LED wafer has been isolated;
s2.4) aligning micro-LED chips on the wafer with circuit patterns on the circuit board, and then moving the circuit board at a lower speed to contact the circuit board with the wafer;
s2.5) heating and pressing the circuit board and the wafer to enable Au/Sn solder on the circuit board to be melted, and then connecting the circuit board with a bonding pad of the micro-LED chip;
s2.6) peeling the wafer substrate by using one of a peeling technology, a laser peeling technology, a chemical peeling technology, a mechanical grinding technology and the like, thereby realizing the bonding and the transfer of the micro-LED chip and the circuit board.
2. The micro-LED chip substrate peeling and bonding method according to claim 1, characterized in that: in the step S1.1), periodically patterning SiO in the micro-LED chip 2 The diameter of the bottom of the array is 2-5 μm, and the height is 1-3 μm.
3. The substrate peeling and bonding method of a micro-LED chip according to claim 1 or 2, characterized in that: in the step S1.2), the sapphire substrate surface is perforated to form grooves, and the method adopted is any one of laser drilling, etching by photolithography, and etching by acidic substances such as hydrochloric acid.
4. The substrate peeling and bonding method of a micro-LED chip according to claim 1 or 2, characterized in that: in the step S1.3), BOE solution is injected into the groove, and the micro-LED chip is placed into the BOE solution for 60-180 seconds.
5. The method for peeling and bonding a substrate of a micro-LED chip according to claim 3, characterized in that: in the step S1.3), BOE solution is injected into the groove, and the micro-LED chip is placed into the BOE solution for 60-180 seconds.
6. The substrate peeling and bonding method of a micro-LED chip according to claim 1 or 2 or 5, characterized in that: in the step S1.4), the sapphire substrate of the micro-LED chip is peeled off by any one of laser peeling, chemical peeling, and mechanical polishing.
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| CN202310340456.1A CN116314540A (en) | 2023-03-31 | 2023-03-31 | Substrate stripping and bonding method of micro-LED chip |
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| CN202310340456.1A CN116314540A (en) | 2023-03-31 | 2023-03-31 | Substrate stripping and bonding method of micro-LED chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117438512A (en) * | 2023-12-21 | 2024-01-23 | 江西兆驰半导体有限公司 | High-voltage Micro LED chip and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117438512A (en) * | 2023-12-21 | 2024-01-23 | 江西兆驰半导体有限公司 | High-voltage Micro LED chip and preparation method thereof |
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