CN109962083B - Flexible color Micro-LED preparation method and prepared product - Google Patents
Flexible color Micro-LED preparation method and prepared product Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 73
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- 238000012546 transfer Methods 0.000 claims abstract description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 17
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 17
- 239000010980 sapphire Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 9
- 238000003486 chemical etching Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 23
- 238000001259 photo etching Methods 0.000 claims description 14
- 238000001020 plasma etching Methods 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract 2
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- 238000005476 soldering Methods 0.000 description 6
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- 238000005516 engineering process Methods 0.000 description 5
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- 239000004065 semiconductor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 230000008439 repair process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract
The invention discloses a preparation method of a flexible color Micro-LED and a prepared product, comprising the following steps: (1) preparing a red light micro-patterning flip chip based on a GaAs substrate; (2) preparing a sapphire-based green light and blue light micro-patterning flip chip; (3) annealing the chip to improve external quantum efficiency; (4) carrying out selective corrosion treatment on a GaAs substrate and carrying out laser stripping treatment on a sapphire substrate; (5) respectively transferring green light, blue light and red light thin film chips to a driving substrate in batches at one time, and simultaneously etching and separating each chip by using ICP (inductively coupled plasma); (6) welding a chip on the driving substrate; (7) the Si substrate is stripped by mechanical grinding and chemical etching to remove the Si and silicon oxide buffer layers. (8) The chip was transferred and the drive integrated into the polydimethylsiloxane using a rubber stamp transfer method. The invention has large transfer amount, is simple, convenient and quick, reduces the transfer times and time, can directly obtain RGB three primary colors and carry out intrinsic color conversion, greatly improves the display quality and reduces the production cost of the Micro-LED.
Description
Technical Field
The invention relates to the technical field of semiconductors and flexible electronics, in particular to a preparation method of a flexible color Micro-LED and a prepared product.
Background
Compared with the existing OLED technology, the new generation display technology Micro-LED not only has the characteristics of high luminous efficiency, high brightness and lower power consumption, but also is not easily affected by water vapor, oxygen or high temperature, so that the Micro-LED has obvious advantages in the aspects of stability, service life, working temperature and the like. Compared with the image reaction speed of a TFT-LCD (thin film transistor-liquid crystal display) in milliseconds and the image reaction speed of an OLED (organic light emitting diode) in microseconds, the image reaction speed of the Micro-LED is only in nanoseconds, and then the Micro-LED is used as a display screen of wearable electronic equipment, and the power consumption accounts for 80%; the characteristics of low power consumption, high response speed and the like of the Micro-LED are most suitable for VR/AR equipment, vehicle-mounted display, smart phones and the like, and the Micro-LED has obvious advantages for improving the use experience of users. Thus, from the present point of view, the Micro-LED market is first likely to focus on ultra-small size displays, such as: vehicle-mounted display, smart phone, smart watch and VR/AR etc.. As can be seen, Micro-LEDs are the core devices for developing next generation display technologies and devices, and have become the focus of current international development and industrialization of semiconductor optoelectronic devices. Currently, the Micro-LED core technology is "on the way" and its application in the display field is also facing major breakthroughs. But its industrialization still faces many problems such as: micro-scale and array, bulk chip transfer, color transformation, detection and repair, etc. In addition, the flexible electronic display technology has wide application prospect and rapid expansion of market scale due to unique flexibility and ductility and efficient and low-cost manufacturing process. Flexible electronics, a new popular science, has attracted extensive attention in the scientific and technological field and industry at home and abroad, and has attracted the investment of numerous companies in the research and development process of the scientific and technological field.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is to provide a preparation method of a flexible color Micro-LED and a prepared product. The device can realize large, simple, convenient and quick movement, and reduce the times and time of movement.
In order to solve the technical problem, the embodiment of the invention provides a preparation method of a flexible color Micro-LED, which comprises the following steps:
step 1, pre-manufacturing a patterned red light flip-chip (pixel) (see fig. 1 (a)) on a GaAs substrate LED wafer (including an epitaxial layer) through photoetching, Reactive Ion Etching (RIE) or inductively coupled plasma etching (ICP), wherein the size of the red light flip-chip is not more than 10 microns. And annealing the manufactured Micro-LED chip in a vacuum furnace.
And 2, respectively manufacturing patterned GaN-based green light and blue light flip chips (pixels) (see fig. 1 (b)) on the sapphire substrate LED wafer (including the epitaxial layer) through photoetching or ICP etching, wherein the size of the patterned GaN-based green light and blue light flip chips is smaller than 10 micrometers. And respectively annealing the manufactured green light chip and the manufactured blue light chip in a vacuum furnace.
And 3, selectively corroding the GaAs substrate of the red light microchip (shown in figure 2 (a)) by using HCl (H2O 2) and H2O to obtain a film-supported pattern chip.
And 4, respectively decomposing and stripping the sapphire substrates on the green light microchip and the blue light microchip (see fig. 2 (b) and (c)) by using laser.
Step 5, translating the pattern-shaped red chip supported by the film to a target position of the driving substrate at one time (see fig. 3 (a) and (b)); the films were etched away with ICP and the interconnected chips were separated.
Step 6, respectively translating the pattern-shaped green light chip and the pattern-shaped blue light chip supported by the thin film to the target positions of the driving substrate at one time (see fig. 3 (c) and (d)); etching the film by ICP, and separating the interconnected chips;
and 7, flip-chip reflow soldering of the chip on the driving substrate through SMT.
And 8, removing the Si and silicon oxide buffer layer of the driving substrate through mechanical polishing and chemical corrosion, and stripping off the Si substrate.
Step 9, transferring a chip and driving integration to Polydimethylsiloxane (PDMS) by using a rubber stamp transfer method to form a flexible Micro-LED (see figure 4);
the green light flip chip and the blue light flip chip are both huge chip arrays.
Further, the red, green and blue flip-chip size is no greater than 10 microns.
Further, the driving substrate is a TFT or a CMOS.
Still further, the chemical etching is HF etching.
The embodiment of the invention also discloses the flexible color Micro-LED obtained by the preparation method of the flexible color Micro-LED.
The embodiment of the invention has the following beneficial effects: the invention can realize Micro-LED Micro-chip and array chip, realizes mass transfer and intrinsic color conversion by one-time batch (mass) parallel transfer of one patterned monochromatic light to carry out three light interpenetrating, does not need auxiliary luminescent material or quantum dot, and obtains the flexible color Micro-LED by SMT reverse reflow welding, substrate treatment of a driving substrate and transfer printing transfer to PDMS. The chip has large transfer amount, is simple, convenient and quick, reduces the transfer times and time, can directly obtain RGB three primary colors and carry out intrinsic color conversion, greatly improves the display quality, reduces the production cost of Micro-LEDs and promotes the industrialization process.
Drawings
FIG. 1 is a schematic diagram of a red light flip-chip and green and blue light flip-chips;
FIG. 2 is a schematic structural diagram of red, green and blue LED chips respectively attached to a GaAs substrate and a sapphire substrate;
FIG. 3 is a flow chart of one-time translation of the film supported patterned green and blue dies onto the target locations of the drive substrate, respectively;
FIG. 4 is a schematic structural diagram of a flexible Micro-LED formed by integrating a chip transfer and a driver into Polydimethylsiloxane (PDMS) using a rubber stamp transfer method.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Example 1
Step 1, pre-manufacturing a patterned red light flip-chip micro chip (pixel) (see fig. 1 (a)) on a GaAs substrate LED wafer (including an epitaxial layer) through photoetching or mutual inductance coupling plasma etching (ICP), wherein the size of the pixel is 8 microns. And annealing the manufactured Micro-LED chip in a vacuum furnace.
And 2, respectively manufacturing patterned GaN-based green light and blue light flip chips (pixels) (see fig. 1 (b) and (c)) on the sapphire substrate LED wafer (including the epitaxial layer) through photoetching or Inductively Coupled Plasma (ICP), wherein the size of each pixel is 8 microns. And respectively annealing the manufactured green light chip and the manufactured blue light chip in a vacuum furnace.
And 3, selectively corroding the GaAs substrate of the red light microchip to obtain the film-supported pattern-shaped chip.
And 4, respectively stripping the sapphire substrates on the green light microchip and the blue light microchip by using laser.
Step 5, translating the pattern-shaped red light chip supported by the film to a target position of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
Step 6, respectively translating the pattern-shaped green light chips and the pattern-shaped blue light chips supported by the thin film to the target positions of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
And 7, flip-chip reflow soldering of the chip on the driving substrate through SMT.
And 8, removing the Si and the silicon oxide buffer layer through mechanical polishing and chemical corrosion to strip off the Si substrate.
And 9, transferring the chip and driving the chip to be integrated into Polydimethylsiloxane (PDMS) by using a rubber stamp transfer method to form the flexible Micro-LED.
Example 2
Step 1, pre-manufacturing a patterned red light flip-chip micro chip (pixel) (see fig. 1 (a)) on a GaAs substrate LED wafer (including an epitaxial layer) through photoetching or mutual inductance coupling plasma etching (ICP), wherein the size of the pixel is 7 microns. And annealing the manufactured Micro-LED chip in a vacuum furnace.
And 2, respectively manufacturing patterned GaN-based green light and blue light flip chips (pixels) (see fig. 1 (b) and (c)) on the sapphire substrate LED wafer (including the epitaxial layer) through photoetching or Inductively Coupled Plasma (ICP), wherein the size of the patterned GaN-based green light and blue light flip chips (pixels) is 7 micrometers. And respectively annealing the manufactured green light chip and the manufactured blue light chip in a vacuum furnace.
And 3, selectively corroding the GaAs substrate of the red light microchip to obtain the film-supported pattern-shaped chip.
And 4, respectively stripping the sapphire substrates on the green light microchip and the blue light microchip by using laser.
Step 5, translating the pattern-shaped red light chip supported by the film to a target position of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
Step 6, respectively translating the pattern-shaped green light chips and the pattern-shaped blue light chips supported by the thin film to the target positions of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
And 7, flip-chip reflow soldering of the chip on the driving substrate through SMT.
And 8, removing the Si and the silicon oxide buffer layer through mechanical polishing and chemical corrosion to strip off the Si substrate.
And 9, transferring the chip and driving the chip to be integrated into Polydimethylsiloxane (PDMS) by using a rubber stamp transfer method to form the flexible Micro-LED.
Example 3
Step 1, pre-manufacturing a patterned red light flip-chip micro chip (pixel) (see fig. 1 (a)) on a GaAs substrate LED wafer (including an epitaxial layer) through photoetching or mutual inductance coupling plasma etching (ICP), wherein the size of the pixel is 6 microns. And annealing the manufactured Micro-LED chip in a vacuum furnace.
And 2, respectively manufacturing patterned GaN-based green light and blue light flip chips (pixels) (see fig. 1 (b) and (c)) on the sapphire substrate LED wafer (including the epitaxial layer) through photoetching or Inductively Coupled Plasma (ICP), wherein the size of the patterned GaN-based green light and blue light flip chips (pixels) is 6 microns. And respectively annealing the manufactured green light chip and the manufactured blue light chip in a vacuum furnace.
And 3, selectively corroding the GaAs substrate of the red light microchip to obtain the film-supported pattern-shaped chip.
And 4, respectively stripping the sapphire substrates on the green light microchip and the blue light microchip by using laser.
Step 5, translating the pattern-shaped red light chip supported by the film to a target position of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
Step 6, respectively translating the pattern-shaped green light chips and the pattern-shaped blue light chips supported by the thin film to the target positions of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
And 7, flip-chip reflow soldering of the chip on the driving substrate through SMT.
And 8, removing the Si and the silicon oxide buffer layer through mechanical polishing and chemical corrosion to strip off the Si substrate.
And 9, transferring the chip and driving the chip to be integrated into Polydimethylsiloxane (PDMS) by using a rubber stamp transfer method to form the flexible Micro-LED.
Example 4
Step 1, pre-manufacturing a patterned red light flip-chip micro chip (pixel) (see fig. 1 (a)) on a GaAs substrate LED wafer (including an epitaxial layer) through photoetching or mutual inductance coupling plasma etching (ICP), wherein the size of the pixel is 5 microns. And annealing the manufactured Micro-LED chip in a vacuum furnace.
And 2, respectively manufacturing patterned GaN-based green light and blue light flip chips (pixels) (see fig. 1 (b) and (c)) on the sapphire substrate LED wafer (including the epitaxial layer) through photoetching or Inductively Coupled Plasma (ICP), wherein the size of the patterned GaN-based green light and blue light flip chips (pixels) is 5 micrometers. And respectively annealing the manufactured green light chip and the manufactured blue light chip in a vacuum furnace.
And 3, selectively corroding the GaAs substrate of the red light microchip to obtain the film-supported pattern-shaped chip.
And 4, respectively stripping the sapphire substrates on the green light microchip and the blue light microchip by using laser.
Step 5, translating the pattern-shaped red light chip supported by the film to a target position of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
Step 6, respectively translating the pattern-shaped green light chips and the pattern-shaped blue light chips supported by the thin film to the target positions of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
And 7, flip-chip reflow soldering of the chip on the driving substrate through SMT.
And 8, removing the Si and the silicon oxide buffer layer through mechanical polishing and chemical corrosion to strip off the Si substrate.
And 9, transferring the chip and driving the chip to be integrated into Polydimethylsiloxane (PDMS) by using a rubber stamp transfer method to form the flexible Micro-LED.
Example 5
Step 1, pre-manufacturing a patterned red light flip-chip micro chip (pixel) (see fig. 1 (a)) on a GaAs substrate LED wafer (including an epitaxial layer) through photoetching or mutual inductance coupling plasma etching (ICP), wherein the size of the pixel is 4 microns. And annealing the manufactured Micro-LED chip in a vacuum furnace.
And 2, respectively manufacturing patterned GaN-based green light and blue light flip chips (pixels) (see fig. 1 (b) and (c)) on the sapphire substrate LED wafer (including the epitaxial layer) through photoetching or inductively coupled plasma etching (ICP), wherein the size of each pixel is 4 microns. And respectively annealing the manufactured green light chip and the manufactured blue light chip in a vacuum furnace.
And 3, selectively corroding the GaAs substrate of the red light microchip to obtain the film-supported pattern-shaped chip.
And 4, respectively stripping the sapphire substrates on the green light microchip and the blue light microchip by using laser.
Step 5, translating the pattern-shaped red light chip supported by the film to a target position of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
Step 6, respectively translating the pattern-shaped green light chips and the pattern-shaped blue light chips supported by the thin film to the target positions of the driving substrate at one time; the films were etched away with ICP and the interconnected chips were separated.
And 7, flip-chip reflow soldering of the chip on the driving substrate through SMT.
And 8, removing the Si and the silicon oxide buffer layer through mechanical polishing and chemical corrosion to strip off the Si substrate.
And 9, transferring the chip and driving the chip to be integrated into Polydimethylsiloxane (PDMS) by using a rubber stamp transfer method to form the flexible Micro-LED.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (5)
1. A preparation method of a flexible color Micro-LED is characterized by comprising the following steps:
step 1, pre-manufacturing a patterned red light flip micro chip on a GaAs substrate LED wafer through photoetching, reactive ion etching or inductively coupled plasma etching;
step 2, respectively manufacturing patterned GaN-based green light and blue light flip chips on the sapphire substrate LED wafer through photoetching or inductively coupled plasma etching, and respectively annealing the manufactured green light and blue light flip chips in a vacuum furnace;
step 3, inverting the red light to GaAs substrate of the microchip by HCl H2O2:H2Performing selective corrosion on the O to obtain a pattern-shaped red light chip supported by the film;
step 4, respectively decomposing and stripping the sapphire substrate on the green light and blue light flip chips by using laser to obtain pattern-shaped green light and blue light chips supported by the thin film;
step 5, translating the pattern-shaped red light chip supported by the film to a target position of a driving substrate at one time, etching the film by using inductively coupled plasma, and separating the mutually connected chips;
step 6, respectively translating the pattern-shaped green light chips and the pattern-shaped blue light chips supported by the thin film to a target position of a driving substrate at one time; etching away the film by inductively coupled plasma, separating the chips connected to each other;
step 7, inversely installing and reflowing the chip on the driving substrate through SMT;
step 8, removing the Si and silicon oxide buffer layer of the driving substrate through mechanical polishing and chemical corrosion, and stripping off the Si substrate;
step 9, transferring the chip and driving the chip and the driving device to be integrated into polydimethylsiloxane by using a rubber stamp transfer method to form a flexible Micro-LED;
the green light flip chip and the blue light flip chip are both huge chip arrays.
2. The method of claim 1, wherein the red, green and blue flip-chip size is no greater than 10 microns.
3. The method for preparing a flexible color Micro-LED according to claim 2, wherein the driving substrate is a TFT substrate or a CMOS substrate.
4. The method for preparing a flexible color Micro-LED according to claim 2, wherein the chemical etching is HF etching.
5. A flexible color Micro-LED obtained by the method for preparing a flexible color Micro-LED according to any one of claims 1 to 4.
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| US11239397B2 (en) * | 2019-12-11 | 2022-02-01 | Mikro Mesa Technology Co., Ltd. | Breathable and waterproof micro light emitting diode display |
| CN111883553A (en) * | 2020-09-11 | 2020-11-03 | 东南大学 | Preparation method of Micro LED display panel without massive transfer operation |
| CN114294609A (en) * | 2022-02-11 | 2022-04-08 | 北京劲吾新能源科技有限公司 | Color photovoltaic panel with light source and picture |
| CN116936554B (en) * | 2023-07-19 | 2024-04-16 | 深圳市鸿展光电有限公司 | Method for preparing Mini LED array by using mechanical transfer technology |
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