CN210668380U - Light-emitting diode chip - Google Patents
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- CN210668380U CN210668380U CN201921815585.7U CN201921815585U CN210668380U CN 210668380 U CN210668380 U CN 210668380U CN 201921815585 U CN201921815585 U CN 201921815585U CN 210668380 U CN210668380 U CN 210668380U
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Abstract
The utility model provides a light-emitting diode chip, through forming a plurality of recesses that are array distribution on the substrate, each adjacent recess forms protruding mesa to grow the core grain at each recess bottom surface and protruding mesa, thereby make the core grain form and misplace from top to bottom, and then can realize comparatively simply the separation of the core grain of recess and protruding mesa, make the core grain of recess remain on the substrate, the core grain of protruding mesa shifts to the huge transfer of light-emitting diode chip on the transfer substrate; meanwhile, the structure of the light-emitting diode chip can simultaneously meet the requirement of huge transfer of light-emitting diodes with different color systems; finally, the side walls of the grooves are provided with the protective glue, so that the core grains positioned on the bottom surfaces of the grooves can be further prevented from being damaged in the process of transferring a large amount of core grains, and the yield of products is improved.
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a light emitting diode chip.
Background
Micro-LEDs have evolved into one of the hot spots of future display technologies, but they have many technical difficulties and complex technologies, especially their key technologies: bulk transfer techniques. With the development of the technology, a great deal of transfer technology has been developed so far, and a plurality of technical branches such as electrostatic adsorption, laser burning contact and the like are provided.
A conventional method for bulk transfer of micro-LEDs is to transfer the micro-elements from a transfer substrate to a receiving substrate by means of substrate Bonding (Wafer Bonding). One of the methods of transferring is direct transferring, i.e., directly bonding the micro device array from the transferring substrate to the receiving substrate, and then removing the transferring substrate. Another method of implementation is "indirect transfer". The method includes two bonding/peeling steps. In indirect transfer, the transpose head may pick up a portion of the array of micro-components on the intermediate carrier substrate, then bond the array of micro-components to the receiving substrate, and then remove the transpose head.
However, the bulk transfer technology of direct transfer or indirect transfer in the prior art has complex process and higher cost.
In view of the above, the present inventors have specially designed a light emitting diode chip, and have resulted from this.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a light emitting diode chip and preparation and transfer method, display device and manufacturing method to solve the complicated and higher problem of cost of the technology of transferring of the huge amount of direct transfer or indirect transfer among the prior art.
In order to realize the purpose, the utility model discloses a technical scheme as follows:
a light emitting diode chip comprising:
the substrate is provided with a plurality of grooves distributed in an array manner on the surface, each adjacent groove forms a raised table top, and the surface of each raised table top is provided with a separation layer;
the core particles are respectively positioned on the bottom surface of the groove and the raised table-board, and each core particle comprises a first type conducting layer, an active layer and a second type conducting layer which are sequentially stacked along the surface of the substrate, a first electrode stacked in a local area of the first type conducting layer, and a second electrode stacked on the surface of the second type conducting layer.
Preferably, the adhesive film layer is adhered to the surface of the core particle of the raised table-board.
Preferably, the side wall of each groove is a sloped side wall.
Preferably, the inclination angle of the side wall of each groove is 45 °.
Preferably, a protective adhesive is adhered to a side wall of each groove.
Preferably, the upper surface of the protective adhesive is lower than the upper surface of the raised mesa.
Preferably, the separation layer comprises a laser lift-off layer or an etch stop layer.
The utility model also provides a manufacturing method of emitting diode chip for make above-mentioned emitting diode chip, include:
step S1, providing a substrate, and forming a plurality of grooves which are distributed in an array and have inclined side walls on the surface of the substrate through an imprinting process, wherein each adjacent groove forms a raised table-board;
step S2, growing a separation layer on the surface of each raised mesa;
step S3, growing a light-emitting epitaxial structure, wherein the light-emitting epitaxial structure comprises a first type conducting layer, an active layer and a second type conducting layer which are sequentially stacked along the surface of the substrate;
step S4, forming a first electrode in a local area of the first type conductive layer, and forming a second electrode on a surface of the second type conductive layer;
step S5, etching the oblique sidewall of each of the grooves to form a scribe line, so that a plurality of independent core particles are formed on the bottom surface of each of the grooves and the raised mesa, respectively, each of the core particles including the first type conductive layer, the active layer, and the second type conductive layer stacked in sequence along the surface of the substrate, the first electrode stacked in a local area of the first type conductive layer, and the second electrode stacked on the surface of the second type conductive layer;
step S6, adhering protective glue on the cutting track, wherein the upper surface of the protective glue is lower than the upper surface of the raised table-board;
and step S7, adhering an adhesive film layer on the surface of the core particle of the raised table-board.
Preferably, the growing a separation layer on the surface of the raised mesa specifically includes: and growing a laser stripping layer or a corrosion stop layer on the surface of the raised mesa.
The utility model also provides a transfer method of emitting diode chip for realize foretell emitting diode chip's huge transfer, the transfer method of emitting diode chip includes: firstly, combining the core particles of the raised table-board with a transfer substrate through the adhesive film layer; and secondly, transferring the core particles of the raised table-board to the transfer substrate through the adhesive film layer by peeling the separation layer.
Preferably, the separation layer includes a laser lift-off layer, and the method for transferring the light emitting diode chip specifically includes: firstly, combining the core particles of the raised table-board with a transfer substrate through the adhesive film layer; secondly, irradiating each laser stripping layer by laser, stripping the core particles of each raised table-board, transferring the core particles of the raised table-board to the transfer substrate through the adhesive film layer, and keeping the core particles of the groove on the substrate, thereby realizing the separation of the core particles positioned in the groove and the raised table-board.
Or, the separation layer includes an etching cut-off layer, and the method for transferring the light emitting diode chip specifically includes: firstly, combining the core particles of the raised table-board with a transfer substrate through the adhesive film layer; secondly, placing the light emitting diode chip in an etching solution, and stripping the core particles of each raised table surface through the etching of the etching solution on the etching stop layer, so that the core particles of the raised table surfaces are transferred onto the transfer substrate through the adhesion film layer, and the core particles of the grooves are remained on the substrate, thereby realizing the separation of the core particles positioned on the grooves and the raised table surfaces.
The utility model also provides a display device manufacturing approach, adopt above arbitrary one the preparation of emitting diode chip and transfer method realize the huge volume transfer.
The utility model also provides a display device adopts the above display device manufacturing method preparation to form.
According to the above technical solution, the light emitting diode chip provided by the utility model, through forming a plurality of recesses that are array distribution on the substrate, each is adjacent the recess forms protruding mesa to grow the core grain at each recess bottom surface and protruding mesa, thereby make the core grain form and misplace from top to bottom, and then can realize comparatively simply the separation of the core grain of recess and protruding mesa, make the core grain of recess remain on the substrate, the core grain of protruding mesa shifts to the huge transfer of light emitting diode chip on the transfer substrate; meanwhile, the structure of the light-emitting diode chip can simultaneously meet the requirement of huge transfer of light-emitting diodes with different color systems; finally, the side walls of the grooves are provided with the protective glue, so that the core grains positioned on the bottom surfaces of the grooves can be further prevented from being damaged in the process of transferring a large amount of core grains, and the yield of products is improved.
The utility model also provides a manufacturing and transferring method of the light emitting diode chip, a plurality of grooves distributed in an array are formed on the substrate, each adjacent groove forms a raised table-board, and core grains grow on the bottom surface of each groove and the raised table-board, so that the core grains on the bottom surface of the groove and the raised table-board are staggered up and down; the separation layer of the raised table top is corroded by single laser stripping or corrosive solution, so that the separation of the core particles of the groove and the raised table top can be realized; the manufacturing and transferring method is simple to operate, easy to realize and low in cost, and the transfer of the huge micro LED can be realized through the conventional adhesion process without complex appliances and processes such as a suction nozzle and the like; meanwhile, the transfer substrate in the transfer process can be recycled.
The utility model also provides a display device manufacturing approach, wherein the huge transfer process adopts foretell preparation and transfer method, can simplify technology, reduce cost for prior art.
The utility model also provides a display device adopts above-mentioned display device manufacturing method to form, can simplify technology equally, reduces the cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a light emitting diode chip provided in the present application;
FIG. 2 is a schematic structural view of a core particle provided herein;
fig. 3 to 9 are schematic structural diagrams corresponding to steps of methods for manufacturing led core particles according to embodiments 1 and 2 of the present application;
fig. 10-11 are schematic structural diagrams corresponding to steps of a method for transferring led core particles according to embodiment 1 of the present application;
fig. 10 and 12 are schematic structural diagrams corresponding to steps of a method for transferring led core particles according to embodiment 2 of the present application;
fig. 13 is a schematic structural diagram of a led core particle after a bulk transfer according to an embodiment of the present disclosure;
the symbols in the drawings illustrate that: 1. the light-emitting diode comprises a substrate, 1-1 parts of grooves, 1-2 parts of protruding table tops, 2 parts of separating layers, 3 parts of light-emitting epitaxial structures, 3-1 parts of first type conducting layers, 3-2 parts of active layers, 3-3 parts of second type conducting layers, 4 parts of first electrodes, 5 parts of second electrodes, 6 parts of cutting channels, 7 parts of protective glue, 8 parts of adhesion film layers, 9 parts of laser irradiation, 10 parts of etching solutions.
Detailed Description
In order to make the contents of the present invention clearer, the contents of the present invention will be further explained with reference to the accompanying drawings. The present invention is not limited to this specific embodiment. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Example 1
The present embodiment provides a light emitting diode chip, as shown in fig. 1, including:
the substrate comprises a substrate 1, wherein the substrate 1 is a sapphire substrate, a plurality of grooves 1-1 distributed in an array form are formed in the surface of the substrate 1, a raised table top 1-2 is formed by each adjacent groove 1-1, and a separation layer 2 is arranged on the surface of each raised table top 1-2;
and the core particles are respectively positioned on the bottom surface of the groove 1-1 and the raised table top 1-2, and each core particle comprises a first type conducting layer 3-1, an active layer 3-2 and a second type conducting layer 3-3 which are sequentially stacked along the surface of the substrate 1, a first electrode 4 stacked on a local area of the first type conducting layer 3-1 and a second electrode 5 stacked on the surface of the second type conducting layer 3-3.
And the adhesive film layer 8 is bonded with the surface of the core particle of the raised table-board 1-2.
The side wall of each groove 1-1 is a sloping side wall.
The side wall of each groove 1-1 is inclined at an angle of 45 deg..
The side wall of each groove 1-1 is adhered with a protective adhesive 7.
The upper surface of the protective glue 7 is lower than the upper surface of the raised mesa 1-2.
The separation layer 2 includes a laser peeling layer.
The present embodiment provides a method for manufacturing a light emitting diode chip, which is used for manufacturing the light emitting diode chip, as shown in fig. 3 to 9, and includes:
step S1, providing a substrate 1, wherein the substrate 1 is a sapphire substrate, and forming a plurality of grooves 1-1 which are distributed in an array and have inclined side walls on the surface of the substrate 1 through an imprinting process, and forming a raised table top 1-2 by each adjacent groove 1-1;
step S2, growing a separation layer 2 on the surface of each raised mesa 1-2, wherein the separation layer 2 comprises a laser stripping layer;
step S3, growing a light-emitting epitaxial structure 3, wherein the light-emitting epitaxial structure 3 comprises a first type conducting layer 3-1, an active layer 3-2 and a second type conducting layer 3-3 which are sequentially stacked along the surface of a substrate 1;
step S4, forming a first electrode 4 on a local area of the first type conductive layer 3-1, and forming a second electrode 5 on the surface of the second type conductive layer 3-3;
step S5, etching the inclined side wall of each groove 1-1 to form a cutting channel 6, so that the bottom surface of each groove 1-1 and the raised table-board 1-2 form a plurality of independent core particles respectively, and each core particle comprises a first type conducting layer 3-1, an active layer 3-2 and a second type conducting layer 3-3 which are stacked in sequence along the surface of the substrate 1, a first electrode 4 stacked in a local area of the first type conducting layer 3-1 and a second electrode 5 stacked on the surface of the second type conducting layer 3-3;
step S6, adhering protective glue 7 on the cutting track 6, wherein the upper surface of the protective glue 7 is lower than the upper surface of the raised table-board 1-2;
step S7, an adhesive film layer 8 is adhered on the surface of the core particle of the raised table-board 1-2.
The present embodiment further provides a method for transferring a light emitting diode chip, which is used to realize the bulk transfer of the light emitting diode chip, where the separation layer 2 includes a laser separation layer, as shown in fig. 10 to 11, and the method for transferring a light emitting diode chip specifically includes: firstly, combining the core particles of the raised table top 1-2 with a transfer substrate through an adhesive film layer 8; next, the layers are peeled off by laser irradiation 9, and the core particles of the raised mesas 1-2 are peeled off, as shown in fig. 13, so that the core particles of the raised mesas 1-2 are transferred to the transfer substrate through the adhesive film layer 8, and the core particles of the grooves 1-1 remain on the substrate 1, thereby realizing separation of the core particles located in the grooves 1-1 and the raised mesas 1-2.
According to the technical scheme, the light emitting diode chip provided by the embodiment is a blue-green light emitting diode chip, a plurality of grooves 1-1 distributed in an array form are formed on a substrate 1, the adjacent grooves 1-1 form raised table tops 1-2, and core particles grow on the bottom surfaces of the grooves 1-1 and the raised table tops 1-2, so that the core particles are staggered up and down, the separation of the core particles of the grooves 1-1 and the raised table tops 1-2 can be realized more simply, the core particles of the grooves 1-1 are kept on the substrate 1, and the core particles of the raised table tops 1-2 are transferred to a transfer substrate to transfer the LED chip in a huge amount; meanwhile, the side walls of the grooves 1-1 are provided with the protective glue 7, so that core particles positioned on the bottom surfaces of the grooves 1-1 can be further prevented from being damaged in the process of transferring a large amount of core particles, and the yield of products is improved.
The embodiment also provides a manufacturing and transferring method of the light emitting diode chip, which is the manufacturing and transferring method of the blue-green light emitting diode chip, a plurality of grooves 1-1 distributed in an array are formed on the substrate 1, each adjacent groove 1-1 forms a raised table-board 1-2, and core particles grow on the bottom surface of each groove 1-1 and the raised table-board 1-2, so that the core particles of the bottom surface of the groove 1-1 and the raised table-board 1-2 are staggered up and down; the separation of the core particles of the groove 1-1 and the raised table top 1-2 can be realized by stripping the separation layer 2 of the raised table top 1-2 by single laser; the manufacturing and transferring method is simple to operate, easy to realize and low in cost, and the transfer of the huge micro LED can be realized through the conventional adhesion process without complex appliances and processes such as a suction nozzle and the like; meanwhile, the transfer substrate in the transfer process can be recycled.
Example 2
The present embodiment provides a light emitting diode chip, as shown in fig. 1, including:
the substrate 1, the substrate 1 is a gallium arsenide substrate, the surface of the substrate 1 is provided with a plurality of grooves 1-1 distributed in an array, each adjacent groove 1-1 forms a raised table-board 1-2, and the surface of the raised table-board 1-2 is provided with a separation layer 2;
and the core particles are respectively positioned on the bottom surface of the groove 1-1 and the raised table top 1-2, and each core particle comprises a first type conducting layer 3-1, an active layer 3-2 and a second type conducting layer 3-3 which are sequentially stacked along the surface of the substrate 1, a first electrode 4 stacked on a local area of the first type conducting layer 3-1 and a second electrode 5 stacked on the surface of the second type conducting layer 3-3.
And the adhesive film layer 8 is bonded with the surface of the core particle of the raised table-board 1-2.
The side wall of each groove 1-1 is a sloping side wall.
The side wall of each groove 1-1 is inclined at an angle of 45 deg..
The side wall of each groove 1-1 is adhered with a protective adhesive 7.
The upper surface of the protective glue 7 is lower than the upper surface of the raised mesa 1-2.
The separation layer 2 includes an etching stopper layer.
The present embodiment further provides a method for manufacturing a light emitting diode chip, which is used for manufacturing the light emitting diode chip, as shown in fig. 3 to 9, and includes:
step S1, providing a substrate 1, wherein the substrate 1 is a gallium arsenide substrate, and a plurality of grooves 1-1 which are distributed in an array and have inclined side walls are formed on the surface of the substrate 1 through an imprinting process, and a raised table top 1-2 is formed by each adjacent groove 1-1;
step S2, growing a separation layer 2 on the surface of each raised mesa 1-2, wherein the separation layer 2 comprises an etching stop layer;
step S3, growing a light-emitting epitaxial structure 3, wherein the light-emitting epitaxial structure 3 comprises a first type conducting layer 3-1, an active layer 3-2 and a second type conducting layer 3-3 which are sequentially stacked along the surface of a substrate 1;
step S4, forming a first electrode 4 on a local area of the first type conductive layer 3-1, and forming a second electrode 5 on the surface of the second type conductive layer 3-3;
step S5, etching the inclined side wall of each groove 1-1 to form a cutting channel 6, so that the bottom surface of each groove 1-1 and the raised table-board 1-2 form a plurality of independent core particles respectively, and each core particle comprises a first type conducting layer 3-1, an active layer 3-2 and a second type conducting layer 3-3 which are stacked in sequence along the surface of the substrate 1, a first electrode 4 stacked in a local area of the first type conducting layer 3-1 and a second electrode 5 stacked on the surface of the second type conducting layer 3-3;
step S6, adhering protective glue 7 on the cutting track 6, wherein the upper surface of the protective glue 7 is lower than the upper surface of the raised table-board 1-2;
step S7, an adhesive film layer 8 is adhered on the surface of the core particle of the raised table-board 1-2.
The present embodiment further provides a method for transferring a light emitting diode chip, which is used to implement the bulk transfer of the light emitting diode chip, where the separation layer 2 includes an etching stop layer, as shown in fig. 10 and 12, the method for transferring a light emitting diode chip specifically includes: firstly, combining the core particles of the raised table top 1-2 with a transfer substrate through an adhesive film layer 8; secondly, placing the light emitting diode chip in an etching solution 10, and stripping the core particles of each raised table-board 1-2 by etching the etching stop layer by the etching solution 10, as shown in fig. 13, so that the core particles of the raised table-board 1-2 are transferred to a transfer substrate through an adhesive film layer 8, the core particles of the groove 1-1 are remained on the substrate 1, and further the separation of the core particles positioned in the groove 1-1 and the raised table-board 1-2 is realized.
The present embodiment further provides a manufacturing method of a display device, which employs any one of the above methods for manufacturing and transferring a light emitting diode chip to realize mass transfer.
The embodiment also provides a display device which is manufactured by adopting the manufacturing method of the display device.
According to the above technical solution, the light emitting diode chip provided by the present invention is a red-yellow light emitting diode chip, which is formed with a plurality of grooves 1-1 distributed in an array on a substrate 1, each adjacent groove 1-1 forms a protruding table-board 1-2, and core particles grow on the bottom surface of each groove 1-1 and the protruding table-board 1-2, so that the core particles are vertically staggered, and further the separation of the core particles of the grooves 1-1 and the protruding table-boards 1-2 can be easily realized, the core particles of the grooves 1-1 are retained on the substrate 1, and the core particles of the protruding table-boards 1-2 are transferred to the transfer substrate to transfer the led chip in a huge amount; meanwhile, the side walls of the grooves 1-1 are provided with the protective glue 7, so that core particles positioned on the bottom surfaces of the grooves 1-1 can be further prevented from being damaged in the process of transferring a large amount of core particles, and the yield of products is improved.
The embodiment also provides a manufacturing and transferring method of the light emitting diode chip, which is a manufacturing and transferring method of a red-yellow light emitting diode chip, a plurality of grooves 1-1 distributed in an array are formed on a substrate 1, a raised table top 1-2 is formed by each adjacent groove 1-1, and core particles grow on the bottom surface of each groove 1-1 and the raised table top 1-2, so that the core particles of the bottom surface of the groove 1-1 and the raised table top 1-2 are staggered up and down; and the separation layer 2 of the raised table top 1-2 is corroded by the corrosive solution 10, so that the separation of the core particles of the groove 1-1 and the raised table top 1-2 can be realized; the manufacturing and transferring method is simple to operate, easy to realize and low in cost, and the transfer of the huge micro LED can be realized through the conventional adhesion process without complex appliances and processes such as a suction nozzle and the like; meanwhile, the transfer substrate in the transfer process can be recycled.
Through the embodiment, the utility model also provides a display device manufacturing method, its required huge transfer process of all kinds of light emitting diode chips adopts above-mentioned preparation and the transfer method that corresponds, can simplify the technology for prior art, reduce cost.
The utility model also provides a display device adopts above-mentioned display device manufacturing method to form, can simplify technology equally, reduces the cost.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A light emitting diode chip, comprising:
the substrate is provided with a plurality of grooves distributed in an array manner on the surface, each adjacent groove forms a raised table top, and the surface of each raised table top is provided with a separation layer;
the core particles are respectively positioned on the bottom surface of the groove and the raised table-board, and each core particle comprises a first type conducting layer, an active layer and a second type conducting layer which are sequentially stacked along the surface of the substrate, a first electrode stacked in a local area of the first type conducting layer, and a second electrode stacked on the surface of the second type conducting layer.
2. The light emitting diode chip as claimed in claim 1, further comprising an adhesion film layer bonded to the surface of the core particles of the raised mesa.
3. The light emitting diode chip of claim 1, wherein a sidewall of each of the recesses is a sloped sidewall.
4. The light emitting diode chip as claimed in claim 3, wherein the side wall of each of the grooves is inclined at an angle of 45 °.
5. The light emitting diode chip as claimed in claim 1, 2, 3 or 4, wherein a protective adhesive is adhered to a sidewall of each of the recesses.
6. The light emitting diode chip of claim 5, wherein an upper surface of the protection paste is lower than an upper surface of the raised mesa.
7. The light-emitting diode chip as claimed in claim 1, characterized in that the separation layer comprises a laser lift-off layer or an etch stop layer.
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| CN201921815585.7U CN210668380U (en) | 2019-10-28 | 2019-10-28 | Light-emitting diode chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110838502A (en) * | 2019-10-28 | 2020-02-25 | 厦门乾照半导体科技有限公司 | Light emitting diode chip, manufacturing and transferring method thereof, display device and manufacturing method thereof |
| CN115084337A (en) * | 2022-07-21 | 2022-09-20 | 罗化芯显示科技开发(江苏)有限公司 | Mass transfer method of micro light-emitting diode chip |
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2019
- 2019-10-28 CN CN201921815585.7U patent/CN210668380U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110838502A (en) * | 2019-10-28 | 2020-02-25 | 厦门乾照半导体科技有限公司 | Light emitting diode chip, manufacturing and transferring method thereof, display device and manufacturing method thereof |
| CN110838502B (en) * | 2019-10-28 | 2024-04-19 | 厦门乾照半导体科技有限公司 | Light emitting diode chip, manufacturing and transferring method, display device and manufacturing method |
| CN115084337A (en) * | 2022-07-21 | 2022-09-20 | 罗化芯显示科技开发(江苏)有限公司 | Mass transfer method of micro light-emitting diode chip |
| CN115084337B (en) * | 2022-07-21 | 2022-11-04 | 罗化芯显示科技开发(江苏)有限公司 | Mass transfer method of micro light-emitting diode chip |
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