CN112582520A - Micro light emitting diode transfer method and display panel - Google Patents
Micro light emitting diode transfer method and display panel Download PDFInfo
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- CN112582520A CN112582520A CN202011593311.5A CN202011593311A CN112582520A CN 112582520 A CN112582520 A CN 112582520A CN 202011593311 A CN202011593311 A CN 202011593311A CN 112582520 A CN112582520 A CN 112582520A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 174
- 238000007789 sealing Methods 0.000 claims abstract description 70
- 239000003292 glue Substances 0.000 claims abstract description 46
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000003825 pressing Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 91
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000012790 adhesive layer Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010023 transfer printing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 241000252254 Catostomidae Species 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a micro light emitting diode transfer method and a display panel, comprising the following steps: s1, providing a first substrate, wherein a plurality of micro light-emitting diodes are arranged on the surface of one side of the first substrate; s2, providing a second substrate, wherein a bonding glue layer is arranged on the surface of one side of the second substrate; s2, coating a sealing layer to the periphery of the first substrate or the second substrate; s4, pressing the first substrate and the second substrate, wherein the sealing layer enables a sealing cavity to be formed between the first substrate and the second substrate, the micro light-emitting diodes are located in the sealing cavity, and the micro light-emitting diodes are bonded with the bonding glue layer; s5, irradiating laser to the first substrate to separate the micro light-emitting diodes from the first substrate; and S6, irradiating ultraviolet rays to the second substrate to make the bonding glue layer lose viscosity, so that the first substrate can be removed from the second substrate, and the micro light-emitting diodes are transferred to the second substrate.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for transferring micro light emitting diodes and a display panel.
Background
Currently, Liquid Crystal Display (LCD) devices and Organic Light Emitting Diodes (OLEDs) are still the mainstream in the Display market. Recently, when display enterprises participate in the OLED market to be hot, Micro (Micro) LED (hereinafter, referred to as "Micro LED") displays are also gradually becoming next-generation displays. The core raw materials of LCD and OLED displays are liquid crystal (liquid crystal), organic material, respectively, and micro LED displays are displays using LED chips per se in units of 1 to 100 micrometers (μm) as light emitting materials.
In the existing manufacturing process of micro LED display, the focus is on the huge transfer technology of micro LED chips, i.e. how to transfer thousands, tens of thousands, even millions of micro LEDs onto a driving backplane including a pixel driver circuit array.
Existing bulk transfer processes that use uv adhesives to transfer bulk micro LED chips onto a driving backplane typically include: temporarily bonding the micro LED chip on the micro LED chip master plate with the ultraviolet adhesive on the transparent carrier plate; irradiating laser to peel off the master plate of the micro LED chip from the micro LED chip, and transferring the micro LED chip to the transparent carrier plate; irradiating ultraviolet light to enable the ultraviolet adhesive on the transparent carrier plate to release viscosity; and finally, picking up the corresponding micro LED chips by using a plurality of transfer printing heads of the transfer printing suckers and transferring the micro LED chips to a driving back plate.
In the above transfer process, the ultraviolet adhesive is detackified under the irradiation of ultraviolet light and is exposed to the atmosphereInfluence of water, oxygen, which leads toThe ultraviolet adhesive cannot be completely released from the tack, resulting in an abnormal pick-up of the plurality of transfer heads of the subsequent transfer chuck, i.e., a problem that the micro LED chip cannot be picked up because it remains tacky with the ultraviolet adhesive.
In addition, when the existing micro LED chip is temporarily bonded with an ultraviolet adhesive, the micro LED chip is controlled to be entirely inserted into the ultraviolet adhesive so that an upper layer of the ultraviolet adhesive is completely contacted with a master plate which is the micro LED chip. However, the disadvantage of this solution is that the micro LED chips are all embedded in the uv adhesive, the pick-up of the micro LED chips is limited by the height of the uv adhesive layer, the difficulty of the pick-up operation of the transfer heads of the subsequent transfer chuck is increased, and the yield is poor.
Disclosure of Invention
The invention solves the problem of how to overcome the peeling problem between the micro light-emitting diode and the ultraviolet adhesive and improve the yield rate of the micro light-emitting diode which can be picked up by a transfer printing head on a transfer printing sucker.
In order to solve the above problems, the present invention provides a method for transferring a micro led, comprising: s1, providing a first substrate, wherein a plurality of micro light-emitting diodes are arranged on the surface of one side of the first substrate; s2, providing a second substrate, wherein a bonding glue layer is arranged on the surface of one side of the second substrate; s2, coating a sealing layer to the periphery of the first substrate or the second substrate; s4, pressing the first substrate and the second substrate, wherein the sealing layer enables a sealing cavity to be formed between the first substrate and the second substrate, the micro light-emitting diodes are located in the sealing cavity, and the micro light-emitting diodes are bonded with the bonding glue layer; s5, irradiating laser to the first substrate to separate the micro light-emitting diodes from the first substrate; and S6, irradiating ultraviolet rays to the second substrate to make the bonding glue layer lose viscosity, so that the first substrate can be removed from the second substrate, and the micro light-emitting diodes are transferred to the second substrate.
As an optional technical solution, the sealing layer is disposed on a periphery of the first substrate and surrounds an outer side of the micro light emitting diodes.
As an optional technical solution, a sacrificial layer is disposed on a surface of one side of the first substrate, and the micro light emitting diodes are disposed on a surface of the sacrificial layer, which is far away from the first substrate; in S5, laser is irradiated onto the first substrate, the sacrificial layer decomposes to generate a gas, and the gas is filled in the sealed cavity.
As an optional technical solution, a thickness of the film layer of the sealing layer is smaller than a thickness of each of the micro light emitting diodes.
As an optional technical solution, the sealing layer is disposed at a periphery of the second substrate, and the sealing layer is stacked on a surface of one side of the bonding glue layer away from the second substrate, wherein in S4, the first substrate and the second substrate are pressed, the bonding glue layer is adhered to a surface of one side of the sealing layer, and the first substrate is adhered to a surface of the other side of the sealing layer opposite to the surface of the other side of the sealing layer.
As an optional technical solution, the sealing layer is disposed on a periphery of the second substrate, and the sealing layer is disposed around a periphery of the bonding glue layer, wherein a thickness of a film layer of the sealing layer is greater than a thickness of a film layer of the bonding glue layer, and the thickness of a film layer of the sealing layer is less than a sum of the thickness of the film layer of the bonding glue layer and the thickness of the micro light emitting diode.
As an optional technical solution, in S4, the first substrate and the second substrate are pressed, the second substrate is adhered to a surface of one side of the sealing layer, and the first substrate is adhered to a surface of the other side of the sealing layer, where the material of the sealing layer is the same as the material of the bonding glue layer.
As an optional technical solution, in S6, a surface of each of the micro light emitting diodes, which is away from the second substrate, protrudes from a surface of the bonding glue layer, which is away from the second substrate.
As an optional technical solution, the method further comprises: s7, providing a transfer chuck including a plurality of transfer heads, picking up corresponding micro-leds by the transfer heads, and transferring the picked-up micro-leds onto the driving array substrate.
The invention also provides a display panel, which is prepared by the transfer method of the micro light-emitting diode.
Compared with the prior art, the transfer method of the micro light-emitting diode and the display panel provided by the invention have the advantages that the sealing layer is arranged between the first substrate and the second substrate, so that the sealed cavity is formed between the first substrate and the second substrate after being pressed, the problem of abnormal debonding of water, oxygen and the like in a bonding adhesive layer contact environment under the action of ultraviolet rays is solved, the stability and consistency of debonding of the bonding adhesive layer are improved, and the transfer yield of the micro light-emitting diode is improved.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a transfer method of micro light emitting diodes according to an embodiment of the present invention.
Fig. 2 is a schematic top view of a first substrate according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of the first substrate shown in fig. 2.
Fig. 4 to 8 are schematic diagrams illustrating transferring micro light emitting diodes on a first substrate to a second substrate according to an embodiment of the invention.
FIG. 9 is a schematic diagram of a transfer chuck picking up micro LEDs on a second substrate according to an embodiment of the invention.
FIG. 10 is a schematic cross-sectional view of a second substrate according to another embodiment of the present invention.
FIG. 11 is a cross-sectional view of a second substrate according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 1, an embodiment of the present invention provides a method for transferring a micro led, which includes:
s1, providing a first substrate, wherein a plurality of micro light-emitting diodes are arranged on the surface of one side of the first substrate;
s2, providing a second substrate, wherein a bonding glue layer is arranged on the surface of one side of the second substrate;
s2, coating a sealing layer to the periphery of the first substrate or the second substrate;
s4, pressing the first substrate and the second substrate, wherein the sealing layer enables a sealing cavity to be formed between the first substrate and the second substrate, the micro light-emitting diodes are located in the sealing cavity, and the micro light-emitting diodes are bonded with the bonding glue layer;
s5, irradiating laser to the first substrate to separate the micro light-emitting diodes from the first substrate; and
and S6, irradiating ultraviolet rays to the second substrate to make the bonding glue layer lose viscosity, so that the first substrate can be removed from the second substrate, and the micro light-emitting diodes are transferred to the second substrate.
The above S1 to S6 will be described in detail below with reference to fig. 2 to 7.
As shown in fig. 2 and fig. 3, a first substrate 10 is provided, and a plurality of micro light emitting diodes 11 are disposed on a surface of one side of the first substrate 10, wherein the micro light emitting diodes 11 are, for example, arranged in an array.
As shown in fig. 4, a second substrate 20 is provided, and a bonding paste layer 30 is disposed on a surface of one side of the second substrate 20.
In this embodiment, the sealing layer 12 is disposed on the periphery of the first substrate 10 and surrounds the array of the micro light emitting diodes 11, but not limited thereto. In other embodiments of the present invention, the sealing layer may be disposed on a surface of the second substrate.
In a preferred embodiment, the sealing layer 12 is formed at the periphery of the first substrate 10, for example, by coating. Preferably, the sealing layer 12 is, for example, a closed figure, including, but not limited to, a rectangle, a polygon, a circle, an ellipse, etc.
As shown in fig. 4 and 5, the first substrate 10 and the second substrate 20 are pressed, and the sealing layer 12 forms a sealed cavity 40 between the first substrate 10 and the second substrate 20, wherein the micro light emitting diodes 11 are located in the sealed cavity 40.
In a preferred embodiment, the first substrate 10 and the second substrate 20 are pressed together in a vacuum environment, and the sealed chamber 40 is a vacuum chamber.
As shown in fig. 6, the laser irradiates the first substrate 10, the micro light emitting diodes 11 are separated from the first substrate 10 and transferred to the bonding glue layer 30, and the sealing layer 12 adheres to the bonding glue layer 30 on the first substrate 10 and the second substrate 20, so that the first substrate 10 still adheres to the second substrate 20 to maintain the sealed cavity 40 in a sealed state.
As shown in fig. 7, when the ultraviolet rays irradiate the second substrate 20, the bonding glue layer 30 loses adhesiveness, and at this time, the contact surface of the bonding glue layer 30 and the sealing layer 12 loses adhesiveness, so that the first substrate 10 and the sealing layer 12 are removed.
It should be noted that, before the ultraviolet light irradiates the second substrate 20 and during the irradiation process, before the bonding adhesive layer 30 loses its adhesiveness, the portion of the bonding adhesive layer 30 in contact with the micro light emitting diodes 11 is always in the sealed chamber 40, and is not affected by water, oxygen, and the like in the ambient air, so that a good de-adhering effect (i.e., the bonding adhesive layer loses its adhesiveness) can be obtained, so that the micro light emitting diodes 11 are only carried by the bonding adhesive layer 30, but are not adhered by it, and are conveniently picked up by the transfer head 101 of the transfer chuck 100 (as shown in fig. 8 and 9).
In other words, the sealing layer 12 is disposed between the peripheries of the first substrate 10 and the second substrate 20 to obtain the sealed cavity 40, and the sealed cavity 40 isolates factors such as water, oxygen and the like in the ambient air, so as to avoid the problems that the bonding glue layer 30 cannot lose viscosity due to the action of the water and the oxygen under the action of the ultraviolet light, and the debonding yield is low.
In a preferred embodiment, a sacrificial layer (not shown) is further disposed on a surface of the first substrate 10, and the micro light emitting diodes 11 are disposed on a surface of the sacrificial layer away from the first substrate 10. When the laser is irradiated to the first substrate 10, the laser penetrates through the first substrate 10 to pyrolyze the sacrificial layer to generate gas, such as nitrogen, and the nitrogen is filled in the vacuum chamber 40, so that the effect of isolating the bonding glue layer 30 from water, oxygen and the like in the environment can be better realized.
In a preferred embodiment, the sacrificial layer is, for example, a gallium nitride layer, or the micro-leds 11 are, for example, gallium nitride-based micro-leds.
In a preferred embodiment, the first substrate 10 is, for example, a transparent substrate through which laser light can pass, such as a sapphire substrate; the second substrate 20 is, for example, a transparent substrate that ultraviolet rays can penetrate, such as a sapphire substrate. In addition, a driving back plate including a driving array may be further disposed on the second substrate 20.
As shown in fig. 3 and 8, when the micro light emitting diodes 11 are transferred to the bonding adhesive layer 30 of the second substrate 20, one side of each micro light emitting diode 11 away from the second substrate 20 protrudes out of the surface of the bonding adhesive layer 30 away from the second substrate 20, so that the micro light emitting diodes 11 can be picked up by the transfer heads 101 on the transfer chuck 100, and the pick-up yield can be improved.
Preferably, the sealing layer 12 is disposed on the first substrate 10, and a thickness T1 of the sealing layer 12 is smaller than a thickness T2 of each micro light emitting diode 11, so that after the first substrate 10 and the second substrate 20 are laminated, each micro light emitting diode 11 is partially embedded in the bonding glue layer 30 in the thickness direction.
As shown in fig. 10, in another embodiment of the present invention, a second substrate 200 is provided, a bonding glue layer 210 is disposed on a surface of one side of the second substrate 200, and a sealing layer 220 is disposed on a surface of the bonding glue layer 210 on a side away from the second substrate 200.
After the first substrate 10 and the second substrate 200 are bonded, the surface of one side of the sealing layer 220 is adhered to the first substrate 10, and the surface of the other side of the sealing layer 220 is adhered to the bonding glue layer 210, wherein after the bonding glue layer 210 loses adhesiveness, the sealing layer 220 is adhered to the first substrate 10 and is removed together.
In this embodiment, the thickness T3 of the sealing layer 220 is less than the thickness T2 of each micro light emitting diode 11, so that each micro light emitting diode 11 is partially embedded in the bonding glue layer 210 in the thickness direction after the first substrate 10 and the second substrate 200 are laminated.
As shown in fig. 11, in another embodiment of the present invention, a second substrate 300 is provided, a bonding glue layer 310 is disposed on a surface of one side of the second substrate 300, and a sealing layer 320 is disposed on a surface of one side of the second substrate 300 and surrounds a periphery of the bonding glue layer 310.
In a preferred embodiment, the sealing layer 320 is formed at the periphery of the second substrate 300 by coating, for example. Preferably, the sealing layer 320 is, for example, a closed figure including, but not limited to, a rectangle, a polygon, a circle, an ellipse, etc.
After the first substrate 10 and the second substrate 300 are bonded, the surface of one side of the sealing layer 320 is adhered to the first substrate 10, and the surface of the other side of the sealing layer 320 is adhered to the second substrate 300, wherein the sealing layer 320 and the bonding glue layer 310 are, for example, ultraviolet glue of the same material, and after the ultraviolet light is irradiated, the sealing layer 320 and the bonding glue layer 310 lose adhesiveness at the same time, so that the first substrate 10 adhered to one side of the sealing layer 320 is removed.
In this embodiment, the film thickness T4 of the sealing layer 320 is less than the sum of the thickness T2 of each micro light emitting diode 11 and the film thickness T5 of the bonding glue layer 310, so that each micro light emitting diode 11 is partially embedded in the bonding glue layer 310 in the thickness direction after the first substrate 10 and the second substrate 300 are laminated.
The invention also provides a display panel, which is manufactured by adopting the micro light-emitting diode transfer method.
In summary, according to the transfer method of the micro light emitting diode and the display panel provided by the invention, the sealing layer is arranged between the first substrate and the second substrate, so that the sealed cavity is formed between the first substrate and the second substrate after being pressed, the problem that the bonding adhesive layer is abnormally debonded under the action of ultraviolet rays due to the contact of water, oxygen and the like in the environment is isolated, the debonding stability and consistency of the bonding adhesive layer are improved, and the transfer yield of the micro light emitting diode is improved.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other. It is to be noted that the present invention may take various other embodiments, and that various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A micro light emitting diode transfer method is characterized by comprising the following steps:
s1, providing a first substrate, wherein a plurality of micro light-emitting diodes are arranged on the surface of one side of the first substrate;
s2, providing a second substrate, wherein a bonding glue layer is arranged on the surface of one side of the second substrate;
s2, coating a sealing layer to the periphery of the first substrate or the second substrate;
s4, pressing the first substrate and the second substrate, wherein the sealing layer enables a sealing cavity to be formed between the first substrate and the second substrate, the micro light-emitting diodes are located in the sealing cavity, and the micro light-emitting diodes are bonded with the bonding glue layer;
s5, irradiating laser to the first substrate to separate the micro light-emitting diodes from the first substrate; and
and S6, irradiating ultraviolet rays to the second substrate to make the bonding glue layer lose viscosity, so that the first substrate can be removed from the second substrate, and the micro light-emitting diodes are transferred to the second substrate.
2. The method of claim 1, wherein the sealing layer is disposed on the periphery of the first substrate and surrounds the outer sides of the micro light emitting diodes.
3. The method for transferring micro light-emitting diodes according to claim 1, wherein a sacrificial layer is disposed on a surface of one side of the first substrate, and the micro light-emitting diodes are disposed on a surface of the sacrificial layer on a side away from the first substrate; in S5, laser is irradiated onto the first substrate, the sacrificial layer decomposes to generate a gas, and the gas is filled in the sealed cavity.
4. The method of claim 1, wherein the sealing layer has a thickness less than a thickness of each of the micro light emitting diodes.
5. The method of claim 1, wherein the sealing layer is disposed on a periphery of the second substrate, and the sealing layer is laminated on a surface of the bonding glue layer on a side away from the second substrate, wherein in step S4, the first substrate and the second substrate are pressed together, the bonding glue layer is adhered to a surface of one side of the sealing layer, and the first substrate is adhered to a surface of the other side of the sealing layer opposite to the bonding glue layer.
6. The method of claim 1, wherein the sealing layer is disposed on a periphery of the second substrate, the sealing layer being disposed around a periphery of the bonding glue layer, wherein a thickness of the sealing layer is greater than a thickness of the bonding glue layer, and the thickness of the sealing layer is less than a sum of the thickness of the bonding glue layer and the thickness of the micro light emitting diode.
7. The method for transferring micro light emitting diodes of claim 6, wherein in the step S4, the first substrate and the second substrate are pressed, the surface of one side of the sealing layer is adhered to the second substrate, and the surface of the other side of the sealing layer is adhered to the first substrate, wherein the material of the sealing layer is the same as the material of the bonding glue layer.
8. The method of claim 1, wherein in step S6, a surface of each of the micro light emitting diodes, which is away from the second substrate, protrudes from a surface of the bonding glue layer, which is away from the second substrate.
9. The method of claim 1, further comprising:
s7, providing a transfer chuck including a plurality of transfer heads, picking up corresponding micro-leds by the transfer heads, and transferring the picked-up micro-leds onto the driving array substrate.
10. A display panel produced by the transfer method of the micro light emitting diode according to any one of claims 1 to 9.
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| CN202011593311.5A CN112582520B (en) | 2020-12-29 | 2020-12-29 | Micro light emitting diode transfer method and display panel |
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| CN202011593311.5A CN112582520B (en) | 2020-12-29 | 2020-12-29 | Micro light emitting diode transfer method and display panel |
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| CN113257964A (en) * | 2021-07-09 | 2021-08-13 | 苏州芯聚半导体有限公司 | Micro LED chip, packaging method thereof and electronic device |
| CN113345829A (en) * | 2021-06-07 | 2021-09-03 | 厦门乾照半导体科技有限公司 | Mass transfer method of micro light-emitting diode, display device and manufacturing method thereof |
| CN114193937A (en) * | 2021-11-05 | 2022-03-18 | 华中科技大学 | Mu LED full-color display manufacturing method and equipment for removing dead spots and self-aligning jet printing |
| WO2023015569A1 (en) * | 2021-08-13 | 2023-02-16 | 重庆康佳光电技术研究院有限公司 | Micro-element structure and preparation method therefor, and method for transferring led chips |
| WO2023070445A1 (en) * | 2021-10-28 | 2023-05-04 | 重庆康佳光电技术研究院有限公司 | Manufacturing method for weakened structure, manufacturing method for micro light emitting diode display |
| TWI803990B (en) * | 2021-09-24 | 2023-06-01 | 友達光電股份有限公司 | Transfer device and transfer method |
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