CN110148655B - Mass transfer method for micro LED chips - Google Patents
Mass transfer method for micro LED chips Download PDFInfo
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- CN110148655B CN110148655B CN201910423763.XA CN201910423763A CN110148655B CN 110148655 B CN110148655 B CN 110148655B CN 201910423763 A CN201910423763 A CN 201910423763A CN 110148655 B CN110148655 B CN 110148655B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 1
- 239000002313 adhesive film Substances 0.000 description 12
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000011179 visual inspection Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005034 decoration Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018117 Al-In Inorganic materials 0.000 description 1
- 229910018456 Al—In Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a huge transfer method of a micro LED chip, which comprises the following steps: preparing a micro LED chip on a growth substrate; preparing a temporary carrier with one side surface provided with viscosity; placing the chip on the surface of the growth substrate towards a temporary carrier, peeling the chip from the growth substrate and dropping the chip onto the surface of the temporary carrier; preparing a stamp by using a specific material, wherein the surface of the stamp is provided with regularly arranged bulges, and the surfaces of the bulges are provided with viscosity; placing the side, provided with the protrusions, of the stamp opposite to the chip on the surface of the temporary carrier, irradiating UV or heating the temporary carrier, and taking the corresponding chip off the surface of the temporary carrier by the protrusions in the stamp; placing the seal with the chip towards a target substrate, transferring the chip to the surface of the target substrate in a bonding mode, and irradiating UV (ultraviolet) on a bump in the seal or heating to remove the seal; and repeating the steps S2-S6 until the mass transfer of the chips is completed. The method is simple and convenient, the purpose can be realized without complex equipment, and the cost is greatly saved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a mass transfer method for a micro LED chip.
Background
The micro LED (MiniLED or MicroLED) is a display technology which is used for realizing addressing control and individual drive of each pixel point in an LED backlight source by adopting a drive circuit manufactured by adopting a PCB (printed Circuit Board), a flexible PCB (printed Circuit Board) and a CMOS (complementary metal oxide semiconductor)/TFT (thin film transistor) integrated circuit process after traditional LED structures are thinned, miniaturized and matrixed. Because various indexes such as brightness, contrast, reaction time, visual angle, resolution ratio and the like of the micro LED technology are stronger than those of the LCD and OLED technologies, the micro LED technology has attracted extensive attention together with the advantages of self-luminescence, simple structure, small volume and energy conservation.
After the micro LED chip is manufactured, it needs to be transferred to a driving circuit board to form an LED array, which is called Mass Transfer (Mass Transfer). The micro LED chips are too small and huge, so that the micro LED chips are a core technical problem in the current micro LED industrialization process, and have the technical problems of not high transfer speed, not high precision, not ideal yield and the like.
Disclosure of Invention
The invention aims to provide a huge transfer method of a micro LED chip, which simply and conveniently completes the huge transfer of the micro LED chip.
The technical scheme provided by the invention is as follows:
a mass transfer method of micro LED chips comprises the following steps:
s1, preparing a micro LED chip on the growth substrate, wherein the micro LED chip is a vertical chip or a flip chip of the p-side process step;
s2, preparing a temporary carrier with a sticky side surface, wherein the sticky side surface of the temporary carrier is weakened under the condition of UV irradiation or heating;
s3, placing the chip on the surface of the growth substrate towards the temporary carrier, and peeling the chip from the growth substrate and dropping the chip onto the surface of the temporary carrier;
s4, preparing a stamp by using a specific material, wherein the stamp surface is provided with regularly arranged bulges, the surfaces of the bulges are provided with viscosity, and the viscosity of the surfaces of the bulges is weakened under the condition of UV irradiation or heating;
s5, placing the side of the stamp with the bulge opposite to the chip on the surface of the temporary carrier, irradiating UV or heating the temporary carrier, and taking the corresponding chip off the surface of the temporary carrier by the bulge in the stamp;
s6, placing the stamp with the chip towards a target substrate, transferring the chip to the surface of the target substrate in a bonding mode, and irradiating UV (ultraviolet) on the bump in the stamp or heating to remove the stamp;
s7, repeating the steps S2-S6 until the mass transfer of the chips is completed.
According to the method for transferring the huge amount of the micro LED chips, the micro LED chips on the growth substrate are peeled off and placed on the temporary carrier with the viscosity on one side surface, and then the protrusions on the surface of the seal transfer the chips to the target substrate, so that the huge amount transfer of the micro LED chips is simply and quickly realized, and the precision, the yield and the quality can reach more than 99.999%; and moreover, the method can be realized without complex equipment, so that the cost is greatly saved.
Drawings
The foregoing features, technical features, advantages and embodiments are further described in the following detailed description of the preferred embodiments, which is to be read in connection with the accompanying drawings.
FIGS. 1 to 6 are schematic views illustrating a mass transfer method of a micro LED chip according to the present invention.
Detailed Description
The essence of the invention is further illustrated below with reference to the figures and examples, but the invention is not limited thereto.
The invention provides a huge transfer method of a micro LED chip, which comprises the following steps:
s1 micro LED chips 2, which are vertical chips or flip chips to p-plane process steps, are prepared on the growth substrate 1, as shown in fig. 1. The vertical chip and the flip chip are conventional chips, and the manufacturing steps of the vertical chip at least comprise: and sequentially growing an n-GaN layer, a light emitting layer, a p-GaN layer, a metal reflecting layer (Ag material and the like) and a bonding layer (Al-In material and the like) on the growth substrate, namely completing the p-surface process preparation. The growth substrate may be any substrate such as sapphire.
S2, preparing a temporary carrier with a sticky side surface, wherein the stickiness of the surface of the temporary carrier is greatly reduced or even lost under the condition of UV irradiation or heating. The temporary carrier is not limited in particular, as long as one side surface of the temporary carrier has the required adhesive property and can be used for transferring the micro LED chips.
S3 places the chip 2 on the surface of the growth substrate 1 toward the temporary carrier 3, peels the chip off the growth substrate and drops to the surface of the temporary carrier 3 as shown in fig. 2. Before the stripping, the chips with good quality on the surface of the growth substrate can be selected by visual inspection, so as to selectively strip, and the stripping quantity is determined according to the actual situation, and can be a single chip, a plurality of chips, a row of chips or a plurality of rows of chips. In the stripping process, the chip on the surface of the growth substrate is placed towards the temporary carrier 3 (the temporary carrier is placed below, and the growth substrate with the chip is placed above the temporary carrier), and the high-quality chip is stripped from the growth substrate by adopting a laser stripping mode and falls onto the surface of the temporary carrier 3. In the process of dropping the chips, the surface of the temporary carrier 3 is moved to make the chips on the surface of the temporary carrier 3 be arranged in a specific array (which can be the same as the arrangement mode of the chips on the surface of the growth substrate). It is to be noted that, in order not to cause inversion, skew, or the like when the chip is dropped, the distance between the chip and the temporary carrier 3 before peeling is not more than 1mm (micrometer), preferably 500 μm, i.e., peeling of the chip is started immediately after the chip is spaced 500 μm above the temporary carrier.
S4 is used to prepare a stamp 4 with a specific material, the stamp surface has regularly arranged protrusions 41, as shown in fig. 3, wherein fig. 3(a) is a top view of the stamp, fig. 3(b) is a side view of the stamp, the surface of the protrusions 41 has viscosity (as shown, the protrusion surface has adhesive 42), and the viscosity of the protrusion surface is greatly reduced or even loses viscosity under UV irradiation or heating. Specifically, the stamp may be prepared from PDMS (polydimethylsiloxane), and the protrusions on the stamp surface are regularly distributed according to the arrangement of the chips on the surface of the temporary carrier. The material used for the stamp is selected from materials with suitable hardness, viscosity and flexibility, and is not limited herein. The arrangement of the bumps on the stamp can be set according to actual conditions, the arrangement of the bumps can be the same as the arrangement mode of the chips on the surface of the temporary carrier, and the bumps can also be arranged at intervals according to the arrangement of the chips, so long as the chips can be conveniently transferred from the surface of the temporary carrier.
S5 is a step of placing the side of the stamp 4 having the bumps 41 against the chip on the surface of the temporary carrier (the temporary carrier with the chip is placed below and the stamp is placed above), and UV irradiation or heating is performed on the temporary carrier to cause the temporary carrier to lose its adhesiveness, and the corresponding chip is removed from the surface of the temporary carrier by the adhesiveness of the bumps in the stamp, as shown in fig. 4. Here, the position of UV irradiation or heating corresponds to a position where the bumps in the secondary stamp can transfer the chip.
S6 placing the stamp with the chip toward the target substrate 5, transferring the chip to the surface of the target substrate by bonding, and irradiating UV or heating the bumps in the stamp to remove the stamp, as shown in fig. 5. The target substrate is a CMOS control panel or a TFT control panel.
S7 repeats the steps S2-S6 until the bulk transfer of chips is completed, as shown in FIG. 6.
After the huge transfer of the micro LED chip on the surface of the growth substrate is completed according to the steps, for the vertical chip, the manufacturing of the vertical chip needs to be continuously completed, and the manufacturing comprises side surface passivation, N electrode preparation on the surface of the N-GaN layer and the like.
Example 1, the micro LED chip is a vertical chip
After an epitaxial structure grows on the surface of the sapphire substrate, etching a device discrete groove in the epitaxial structure, wherein the center distance between adjacent devices is 20 microns; and sequentially depositing a reflecting layer material Ag, an isolating material TiW and a bonding material AuIn on the surface of each device p. And finally, carrying out visual inspection and recording the positions of good products.
According to the visual inspection result, a laser stripping method is adopted to strip the good chip from the sapphire substrate and enable the good chip to fall on an adhesive film (temporary carrier); during the peeling of the chips, the dropped chips were arranged in a square array by moving the adhesive film, and the center distance between adjacent chips in the array was 20 μm by 100 μm. Before the chip dropped, the adhesive film was about 1mm from the chip.
The stamp of FIG. 3 is made of PDMS, and the surface of the protruding portion has adhesive. The stamp bumps were aligned and adhered to the chip array on the adhesive film, the adhesive film was irradiated with UV light to lose its adhesiveness, and 100 columns of chips were removed from the adhesive film.
Aligning the projection of the seal with the control unit array on the CMOS control board, making the chip array contact with the control unit array, heating to 250 ℃ for bonding (through the bonding material on the chip surface); the adhesive was then tack-free by irradiation with UV light.
And repeating the operation until the surface of the control unit array on the CMOS control panel is full of chips, and finishing the mass transfer of the micro LED chips. And finally, further finishing the manufacture of the vertical chip, including etching to remove the non-doped layer of the chip, passivating the side surface, preparing an N electrode on the surface of the N-GaN layer and the like.
Example 2 the micro LED chip is a flip chip
And after the epitaxial structure grows on the surface of the sapphire substrate, manufacturing the flip chip and separating the chips, wherein the distance between the central points of the adjacent chips in the transverse and longitudinal directions is 100 mu m by 80 mu m. And depositing a bonding material AuIn on the surface of the chip, and performing visual inspection and recording the position of a good product.
According to the visual inspection result, a laser stripping method is adopted to strip the good chip from the sapphire substrate and enable the good chip to fall on an adhesive film (temporary carrier); during the peeling of the chips, the dropped chips were arranged in a square array by moving the adhesive film, and the center distance between adjacent chips in the array was 100 μm by 80 μm. Before the chip dropped, the adhesive film was about 1mm from the chip.
The stamp of FIG. 3 is made of PDMS, and the surface of the protruding portion has adhesive. The stamp bumps were aligned and adhered to the chip array on the adhesive film, the adhesive film was irradiated with UV light to lose its adhesiveness, and 100 columns of chips were removed from the adhesive film.
Aligning the projection of the seal with the control unit array on the TFT control board, contacting the chip array with the control unit array, heating to 250 ℃ for bonding (through the bonding material on the chip surface); the adhesive was then tack-free by irradiation with UV light.
And repeating the operation until the surface of the control unit array on the TFT control panel is full of chips, and finishing the mass transfer of the micro LED chips.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
1. A method for transferring a mass of micro LED chips is characterized by comprising the following steps:
s1, preparing a micro LED chip on the growth substrate, wherein the micro LED chip is a vertical chip or a flip chip of the p-side process step;
s2, preparing a temporary carrier with a sticky side surface, wherein the sticky side surface of the temporary carrier is weakened under the condition of UV irradiation or heating;
s3, placing the chip on the surface of the growth substrate towards the temporary carrier, and peeling the chip from the growth substrate and dropping the chip onto the surface of the temporary carrier;
s4, preparing a stamp by using a specific material, wherein the stamp surface is provided with regularly arranged bulges, the surfaces of the bulges are provided with viscosity, and the viscosity of the surfaces of the bulges is weakened under the condition of UV irradiation or heating;
s5, placing the side of the stamp with the bulge opposite to the chip on the surface of the temporary carrier, irradiating UV or heating the temporary carrier, and taking the corresponding chip off the surface of the temporary carrier by the bulge in the stamp;
s6, placing the stamp with the chip towards a target substrate, transferring the chip to the surface of the target substrate in a bonding mode, and irradiating UV (ultraviolet) on the bump in the stamp or heating to remove the stamp;
s7 repeating the steps S2-S6 until the mass transfer of the chips is completed;
in step S3, the method includes:
s31, selecting a chip with good quality on the surface of the growing substrate;
s32, placing the chip on the surface of the growth substrate towards a temporary carrier, and peeling the chip with good quality from the growth substrate and dropping the chip onto the surface of the temporary carrier;
s33 moving the temporary carrier surface to make the chips on the temporary carrier surface arranged in a specific array.
2. The micro LED chip bulk transfer method according to claim 1, wherein the distance between the chip and the temporary carrier is not more than 1mm before the chip is peeled off from the surface of the growth substrate in step S3.
3. The method for mass transfer of micro LED chips according to claim 1, wherein in step S4, the stamp is prepared from PDMS and the protrusions on the stamp surface are regularly distributed according to the arrangement of the chips on the temporary carrier surface.
4. The method of claim 1, wherein in step S6, the target substrate is a CMOS control board or a TFT control board.
5. The mass transfer method of micro LED chips according to claim 1, wherein when the process of fabricating vertical chips on the growth substrate to the p-side thereof in step S1, a step of completing the fabrication of vertical chips on the surface of the n-GaN layer is further included after step S7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910423763.XA CN110148655B (en) | 2019-05-21 | 2019-05-21 | Mass transfer method for micro LED chips |
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| CN201910423763.XA CN110148655B (en) | 2019-05-21 | 2019-05-21 | Mass transfer method for micro LED chips |
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| CN110148655A CN110148655A (en) | 2019-08-20 |
| CN110148655B true CN110148655B (en) | 2020-10-13 |
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Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113228243A (en) * | 2019-12-03 | 2021-08-06 | 重庆康佳光电技术研究院有限公司 | Bulk transfer method and system for semiconductor device |
| CN111048458B (en) * | 2019-12-26 | 2022-06-07 | 浙江大学 | Octopus bionic programmable sucker type transfer seal and transfer method |
| CN111164741A (en) * | 2019-12-31 | 2020-05-15 | 重庆康佳光电技术研究院有限公司 | Detection processing method, system and storage medium |
| CN111128813B (en) * | 2020-01-20 | 2022-10-28 | 福州大学 | Mu LED mass transfer method |
| US12015113B2 (en) | 2020-04-30 | 2024-06-18 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Bonding method, display backplane and system for manufacturing display backplane |
| CN112967971B (en) * | 2020-05-27 | 2023-04-18 | 重庆康佳光电技术研究院有限公司 | Micro-LED transfer substrate and preparation method thereof |
| CN112967972B (en) * | 2020-06-03 | 2022-03-25 | 重庆康佳光电技术研究院有限公司 | Device and method for transferring huge amount of micro light-emitting diodes |
| CN111769054A (en) * | 2020-06-12 | 2020-10-13 | 福州大学 | Mass transfer method of color mu LED |
| CN111739987B (en) * | 2020-08-18 | 2021-02-05 | 深圳市Tcl高新技术开发有限公司 | LED chip transfer method and light source board |
| CN112018223B (en) * | 2020-08-28 | 2021-09-24 | 武汉大学 | Thin film flip structure Micro-LED chip with transfer printing of bonding layer and preparation method thereof |
| CN112599651B (en) * | 2020-12-07 | 2022-01-25 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and transfer method |
| CN112968084A (en) * | 2021-02-04 | 2021-06-15 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN113097119A (en) * | 2021-03-08 | 2021-07-09 | 浙江清华柔性电子技术研究院 | Device and method for peeling element |
| CN113299591B (en) * | 2021-04-15 | 2022-09-13 | 山西高科华兴电子科技有限公司 | Rapid mass transfer method for microchip |
| CN113270341B (en) * | 2021-04-20 | 2023-01-06 | 广东工业大学 | Chip expansion and mass transfer method based on roller |
| WO2022257017A1 (en) * | 2021-06-08 | 2022-12-15 | 重庆康佳光电技术研究院有限公司 | Transfer device and manufacturing method therefor, detection method, and detection device |
| CN113399822B (en) * | 2021-07-20 | 2021-12-31 | 清华大学 | Laser-assisted in-situ mass transfer method and system |
| CN113611787B (en) * | 2021-08-02 | 2023-03-14 | 东莞市中麒光电技术有限公司 | Chip transfer structure and Micro LED display module repair method |
| WO2023015455A1 (en) * | 2021-08-10 | 2023-02-16 | 重庆康佳光电技术研究院有限公司 | Method for transferring led chip, and display panel |
| CN115706131A (en) * | 2021-08-10 | 2023-02-17 | 重庆康佳光电技术研究院有限公司 | Bulk transfer method, temporary substrate, transfer substrate, and LED display device |
| CN113830727B (en) * | 2021-09-09 | 2024-05-24 | 中国人民解放军军事科学院国防科技创新研究院 | Transfer method of micro-nano piece |
| CN114420818B (en) * | 2021-12-20 | 2024-04-30 | 深圳市思坦科技有限公司 | Chip body, weakening structure and mass transfer method of Micro-LED |
| CN115274942B (en) * | 2022-08-02 | 2023-06-27 | 厦门大学 | Transfer method of miniature flip chip |
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| KR20180036798A (en) * | 2013-06-26 | 2018-04-09 | 에피스타 코포레이션 | Light-emitting device |
| CN108878412A (en) * | 2018-05-07 | 2018-11-23 | 贺俊 | Full-color MicroLEDs display device preparation method |
| CN108962789A (en) * | 2018-06-25 | 2018-12-07 | 开发晶照明（厦门）有限公司 | Micro element transfer method and micro element transfer equipment |
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Denomination of invention: Huge transfer method of micro LED chip Effective date of registration: 20220927 Granted publication date: 20201013 Pledgee: Zhongguancun Beijing technology financing Company limited by guarantee Pledgor: Beijing Yimei New Technology Co.,Ltd. Registration number: Y2022990000687 |