CN110148655A - Miniature LED chip flood tide transfer method - Google Patents
Miniature LED chip flood tide transfer method Download PDFInfo
- Publication number
- CN110148655A CN110148655A CN201910423763.XA CN201910423763A CN110148655A CN 110148655 A CN110148655 A CN 110148655A CN 201910423763 A CN201910423763 A CN 201910423763A CN 110148655 A CN110148655 A CN 110148655A
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- temporary carrier
- miniature led
- flood tide
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 4
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 2
- 239000002313 adhesive film Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000011179 visual inspection Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000002493 microarray Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910018117 Al-In Inorganic materials 0.000 description 1
- 229910018456 Al—In Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of miniature LED chip flood tide transfer methods, comprising: miniature LED chip is prepared in growth substrates；It is equipped with the temporary carrier that a side surface has viscosity；The chip on growth substrates surface is placed towards temporary carrier, chip is removed from growth substrates and falls to temporary carrier surface；Seal is prepared using certain material, seal surface has regularly arranged protrusion, and convex surfaces have viscosity；The chip on the side face temporary carrier surface for having protrusion in seal is placed, UV or heating are irradiated to temporary carrier, the protrusion in seal removes corresponding chip from temporary carrier surface；Seal with chip is placed towards target base plate, chip is transferred to target substrate surface by way of bonding, UV is irradiated to the protrusion in seal or seal is removed in heating；Step S2 ~ S6 is repeated, until completing the flood tide transfer of chip.It is simple and convenient, and can be achieved with purpose, a large amount of save the costs without complicated equipment.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of miniature LED chip flood tide transfer methods.
Background technique
Miniature LED(MiniLED or MicroLED) be by after traditional LED structure filming, microminiaturization and matrixing,
Driving circuit is made using PCB, flexible PCB and CMOS/TFT integrated circuit technology etc., realizes each pixel in LED backlight
The display technology that addressing is controlled and is operated alone.Due to the brightness of miniature LED technology, contrast, the reaction time, visible angle,
The various indexs such as resolution ratio are all better than LCD and OLED technology, in addition self-luminous, the advantage that structure is simple, small in size and energy saving,
It has been subjected to extensive concern.
Miniature LED chip needs to be transferred on drive circuit board and forms LED array after completing, referred to as huge
Amount transfer (Mass Transfer).Since miniature LED chip is too small and substantial amounts, during being current miniature LED industry
The core technology problem faced, the technical problems such as there are transfer velocities not enough fastly, precision is not high enough, yield is undesirable.
Summary of the invention
The object of the present invention is to provide a kind of miniature LED chip flood tide transfer methods, simply and easily complete miniature LED
The flood tide of chip shifts.
Technical solution provided by the invention is as follows:
A kind of miniature LED chip flood tide transfer method, comprising:
S1 prepares miniature LED chip in growth substrates, which is to the vertical chip of the face p processing step or to fall
Cartridge chip；
S2 be equipped with a side surface have viscosity temporary carrier, the temporary carrier surface viscosity UV irradiate or heat
Under the conditions of weaken；
S3 places the chip on growth substrates surface towards temporary carrier, and chip is removed from growth substrates and is fallen to and is faced
When carrier surface；
S4 prepares seal using certain material, and the seal surface has regularly arranged protrusion, and convex surfaces have viscosity,
And the viscosity of the convex surfaces weakens under conditions of UV irradiates or heats；
S5 places the chip on the side face temporary carrier surface for having protrusion in seal, irradiates UV to temporary carrier or adds
Heat, the protrusion in seal remove corresponding chip from temporary carrier surface；
S6 places the seal with chip towards target base plate, and chip is transferred to target base plate table by way of bonding
Face irradiates UV to the protrusion in seal or seal is removed in heating；
S7 repeats step S2 ~ S6, until completing the flood tide transfer of chip.
Miniature LED chip flood tide transfer method provided by the invention, the miniature LED chip in growth substrates is stripped down
It is placed in after a side surface has on the temporary carrier of viscosity, makes the protrusion on seal surface that chip is transferred to target base plate, simply
Quickly realize the flood tide transfer of miniature LED chip, and the high yield of precision can reach 99.999% or more；Further more, without complexity
Equipment can be achieved with, a large amount of save the costs.
Detailed description of the invention
Below by clearly understandable mode, preferred embodiment is described with reference to the drawings, to above-mentioned characteristic, technical characteristic,
Advantage and its implementation are further described.
Fig. 1 ~ Fig. 6 is miniature LED chip flood tide transfer method flow diagram in the present invention.
Specific embodiment
Substantive content of the invention is further illustrated with example with reference to the accompanying drawing, but the contents of the present invention are not limited to
This.
The present invention provides a kind of miniature LED chip flood tide transfer methods, comprising:
S1 prepares miniature LED chip 2 in growth substrates 1, the miniature LED chip be to the face p processing step vertical chip or
Flip-chip, as shown in Figure 1.Here vertical chip and flip-chip is existing conventional die, in the production of vertical chip
It is included at least in step: successively growing n-GaN layers, luminescent layer, p-GaN layer, metallic reflector (Ag material in growth substrates
Deng) and bonded layer (Al-In material etc.), i.e. the face p technique preparation completion.Growth substrates can be the arbitrary substrates such as sapphire.
S2 be equipped with a side surface have viscosity temporary carrier, temporary carrier surface viscosity UV irradiate or heat
Under the conditions of can substantially weaken, or even lose viscosity.Here the concrete form of temporary carrier without limitation, as long as one side surface have
The viscosity of standby composite demand, can be used in shifting miniature LED chip.
S3 places the chip 2 on 1 surface of growth substrates towards temporary carrier 3, and chip is removed and fallen from growth substrates
3 surface of temporary carrier is dropped down onto, as shown in Figure 2.Before removing, growth substrates surface product can be picked out by way of visual inspection
The good chip of matter, is selectively removed with this, can be single core depending on the quantity of removing is with specific reference to actual conditions
Piece, number chips, a column chip, or multiple row chip.In stripping process, the chip direction on growth substrates surface is faced
Shi Zaiti 3 places (temporary carrier is disposed below, and the growth substrates of microarray strip are above temporary carrier), and uses laser lift-off
Mode the good chip of quality removed from growth substrates fall to 3 surface of temporary carrier.During chip is fallen, move
Dynamic 3 surface of temporary carrier makes the chip on 3 surface of temporary carrier (can be with growth substrates surface chip in specific array arrangement
Arrangement mode).It should be noted that chip is carried with interim before removing to make chip not occur situations such as reversion, skew when falling
The distance between body 3 be not more than 1mm(microns), preferably 500 μm, i.e., by chip above temporary carrier 500 μm position it
After start remove chip.
S4 prepares seal 4 using certain material, and seal surface has regularly arranged protrusion 41, as shown in Figure 3, wherein
Fig. 3 (a) is seal top view, and Fig. 3 (b) seal side view, raised 41 surfaces have viscosity, and (convex surfaces as shown have viscosity
Glue 42), and the viscosity of convex surfaces can substantially weaken under conditions of UV irradiates or heats, or even lose viscosity.It specifically, can be with
Use PDMS(dimethyl silicone polymer) prepare seal, and seal surface bulge according to chip temporary carrier surface arrangement side
Formula regular distribution.For the material that seal uses, hardness, viscosity and flexible suitable material are selected, here without limitation.
Raised arrangement can be set on seal with actual conditions, and the arrangement of the protrusion can be arranged with temporary carrier surface chip
The mode of column is identical, can also be arranged according to the arrangement pitch of chip etc., core is shifted as long as can facilitate from temporary carrier surface
Piece.
The chip on the side face temporary carrier surface for having protrusion 41 in seal 4 is placed (the interim load of microarray strip by S5
Body is disposed below, and seal is above), UV or heating are irradiated to temporary carrier, they are that temporary carrier loses viscosity, using in seal
Protrusion viscosity corresponding chip is removed from temporary carrier surface, as shown in Figure 4.Here, the position of UV irradiation or heating
The corresponding secondary seal protrusions can shift the position of chip.
S6 places the seal with chip towards target base plate 5, and chip is transferred to target base by way of bonding
Plate surface irradiates UV to the protrusion in seal or seal is removed in heating, as shown in Figure 5.Target base plate is CMOS control panel or TFT
Control panel.
S7 repeats step S2 ~ S6, until completing the flood tide transfer of chip, as shown in Figure 6.
After the flood tide transfer for completing growth substrates surface micro LED chip according to above step, vertical chip is come
Say, need to continue to complete the production of vertical chip, including side passivation, in n-GaN layer surface preparation N electrode etc..
Example 1, miniature LED chip are vertical chip
After sapphire substrate surface grows epitaxial structure, the discrete slot of device is etched in epitaxial structure, adjacent devices
Centre distance is 20 μm；Reflector material Ag, isolated material TiW and bonding material AuIn are sequentially depositing on the surface each device p.It
Afterwards, it carries out visual inspection and records the position of non-defective unit.
According to visual inspection as a result, using laser-stripping method, non-defective unit chip is removed from Sapphire Substrate, and fall it
In on adhesive film (temporary carrier)；During removing chip, the arrangements of chips squarely fallen is made by mobile adhesive film
Array, the centre distance of adjacent chips is 20 μm * 100 μm in array.Before chip is fallen, adhesive film is apart from chip about 1mm.
The seal such as Fig. 3, convex portion surface toughness glue are made into using PDMS.The protrusion of seal is aligned and is sticked viscous
Property film on chip array, using UV light irradiation adhesive film so that it is lost viscosity, 100 column chips are removed from adhesive film.
By the control unit array on the protrusion alignment CMOS control panel of seal, connect chip array with control unit array
Touching, is heated to 250 DEG C and is bonded (by the bonding material of chip surface)；Lose it with the sticky glue of UV light irradiation later viscous
Property.
Aforesaid operations are repeated, until the control unit array surface on CMOS control panel is covered with chip, complete miniature LED core
The flood tide of piece shifts.Finally, further complete the production of vertical chip, including etching removal chip not mix layer, side blunt
Change, in n-GaN layer surface preparation N electrode etc..
Example 2, miniature LED chip are flip-chip
Production and the separate chip of flip-chip, adjacent chips center are completed after sapphire substrate surface grows epitaxial structure
Spacing of the point in transverse and longitudinal direction is 100 μm * 80 μm.After chip surface deposits bonding material AuIn, carries out visual inspection and record good
The position of product.
According to visual inspection as a result, using laser-stripping method, non-defective unit chip is removed from Sapphire Substrate, and fall it
In on adhesive film (temporary carrier)；During removing chip, the arrangements of chips squarely fallen is made by mobile adhesive film
Array, the centre distance of adjacent chips is 100 μm * 80 μm in array.Before chip is fallen, adhesive film is apart from chip about 1mm.
The seal such as Fig. 3, convex portion surface toughness glue are made into using PDMS.The protrusion of seal is aligned and is sticked viscous
Property film on chip array, using UV light irradiation adhesive film so that it is lost viscosity, 100 column chips are removed from adhesive film.
By the control unit array on the protrusion alignment TFT control panel of seal, connect chip array with control unit array
Touching, is heated to 250 DEG C and is bonded (by the bonding material of chip surface)；Lose it with the sticky glue of UV light irradiation later viscous
Property.
Aforesaid operations are repeated, until the control unit array surface on TFT control panel is covered with chip, complete miniature LED core
The flood tide of piece shifts.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (6)
1. a kind of miniature LED chip flood tide transfer method characterized by comprising
S1 prepares miniature LED chip in growth substrates, which is to the vertical chip of the face p processing step or to fall
Cartridge chip；
S2 be equipped with a side surface have viscosity temporary carrier, the temporary carrier surface viscosity UV irradiate or heat
Under the conditions of weaken；
S3 places the chip on growth substrates surface towards temporary carrier, and chip is removed from growth substrates and is fallen to and is faced
When carrier surface；
S4 prepares seal using certain material, and the seal surface has regularly arranged protrusion, and convex surfaces have viscosity,
And the viscosity of the convex surfaces weakens under conditions of UV irradiates or heats；
S5 places the chip on the side face temporary carrier surface for having protrusion in seal, irradiates UV to temporary carrier or adds
Heat, the protrusion in seal remove corresponding chip from temporary carrier surface；
S6 places the seal with chip towards target base plate, and chip is transferred to target base plate table by way of bonding
Face irradiates UV to the protrusion in seal or seal is removed in heating；
S7 repeats step S2 ~ S6, until completing the flood tide transfer of chip.
2. miniature LED chip flood tide transfer method as described in claim 1, which is characterized in that in step s3, comprising:
S31 selects the good chip of growth substrates surface quality；
S32 places the chip on growth substrates surface towards temporary carrier, and the good chip of quality is removed simultaneously from growth substrates
Fall to temporary carrier surface；
S33 moves temporary carrier surface, and the chip on temporary carrier surface is made to arrange in specific array.
3. miniature LED chip flood tide transfer method as claimed in claim 1 or 2, which is characterized in that in step s3, by core
For piece before growth substrates sur-face peeling, the distance between chip and temporary carrier are not more than 1mm.
4. miniature LED chip flood tide transfer method as described in claim 1, which is characterized in that in step s 4, use PDMS
Prepare seal, and arrangement mode regular distribution of the seal surface bulge according to chip on temporary carrier surface.
5. miniature LED chip flood tide transfer method as described in claim 1, which is characterized in that in step s 6, target base plate
For CMOS control panel or TFT control panel.
6. miniature LED chip flood tide transfer method as described in claim 1, which is characterized in that when being served as a contrast in step S1 in growth
Vertical chip is prepared on bottom to its face p technique, then after step s 7 further includes completing vertical chip preparation in n-GaN layer surface
The step of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910423763.XA CN110148655B (en) | 2019-05-21 | 2019-05-21 | Mass transfer method for micro LED chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910423763.XA CN110148655B (en) | 2019-05-21 | 2019-05-21 | Mass transfer method for micro LED chips |
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| CN110148655A true CN110148655A (en) | 2019-08-20 |
| CN110148655B CN110148655B (en) | 2020-10-13 |
Family
ID=67592354
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| CN201910423763.XA Active CN110148655B (en) | 2019-05-21 | 2019-05-21 | Mass transfer method for micro LED chips |
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Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048458A (en) * | 2019-12-26 | 2020-04-21 | 浙江大学 | Octopus bionic programmable sucker type transfer seal and transfer method |
| CN111128813A (en) * | 2020-01-20 | 2020-05-08 | 福州大学 | Mu LED mass transfer method |
| CN111164741A (en) * | 2019-12-31 | 2020-05-15 | 重庆康佳光电技术研究院有限公司 | Detection processing method, system and storage medium |
| CN111739987A (en) * | 2020-08-18 | 2020-10-02 | 深圳市Tcl高新技术开发有限公司 | LED chip transfer method and light source board |
| CN111769054A (en) * | 2020-06-12 | 2020-10-13 | 福州大学 | Mass transfer method of color mu LED |
| CN112018223A (en) * | 2020-08-28 | 2020-12-01 | 武汉大学 | Thin film flip structure Micro-LED chip with transfer printing of bonding layer and preparation method thereof |
| CN112599651A (en) * | 2020-12-07 | 2021-04-02 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and transfer method |
| CN112967972A (en) * | 2020-06-03 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Device and method for transferring huge amount of micro light-emitting diodes |
| CN112968084A (en) * | 2021-02-04 | 2021-06-15 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN112967971A (en) * | 2020-05-27 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Micro-LED transfer substrate and preparation method thereof |
| CN113097119A (en) * | 2021-03-08 | 2021-07-09 | 浙江清华柔性电子技术研究院 | Device and method for peeling element |
| CN113228243A (en) * | 2019-12-03 | 2021-08-06 | 重庆康佳光电技术研究院有限公司 | Bulk transfer method and system for semiconductor device |
| CN113270341A (en) * | 2021-04-20 | 2021-08-17 | 广东工业大学 | Chip expansion and mass transfer method based on roller |
| CN113299591A (en) * | 2021-04-15 | 2021-08-24 | 山西高科华兴电子科技有限公司 | Rapid mass transfer method for microchip |
| CN113399822A (en) * | 2021-07-20 | 2021-09-17 | 清华大学 | Laser-assisted in-situ mass transfer method and system |
| WO2021217607A1 (en) * | 2020-04-30 | 2021-11-04 | 重庆康佳光电技术研究院有限公司 | Bonding method, display backplate and display backplate manufacturing system |
| CN113611787A (en) * | 2021-08-02 | 2021-11-05 | 东莞市中麒光电技术有限公司 | Chip transfer structure and Micro LED display module repair method |
| CN113830727A (en) * | 2021-09-09 | 2021-12-24 | 中国人民解放军军事科学院国防科技创新研究院 | Micro-nano part transfer method |
| CN114420818A (en) * | 2021-12-20 | 2022-04-29 | 深圳市思坦科技有限公司 | Chip body, weakening structure and mass transfer method of Micro-LED |
| CN115274942A (en) * | 2022-08-02 | 2022-11-01 | 厦门大学 | Transfer method of miniature flip chip |
| WO2022257017A1 (en) * | 2021-06-08 | 2022-12-15 | 重庆康佳光电技术研究院有限公司 | Transfer device and manufacturing method therefor, detection method, and detection device |
| WO2023016376A1 (en) * | 2021-08-10 | 2023-02-16 | 重庆康佳光电技术研究院有限公司 | Mass transfer method, temporary substrate, transfer substrate, and led display device |
| WO2023015455A1 (en) * | 2021-08-10 | 2023-02-16 | 重庆康佳光电技术研究院有限公司 | Method for transferring led chip, and display panel |
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Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113228243A (en) * | 2019-12-03 | 2021-08-06 | 重庆康佳光电技术研究院有限公司 | Bulk transfer method and system for semiconductor device |
| CN111048458A (en) * | 2019-12-26 | 2020-04-21 | 浙江大学 | Octopus bionic programmable sucker type transfer seal and transfer method |
| CN111048458B (en) * | 2019-12-26 | 2022-06-07 | 浙江大学 | Octopus bionic programmable sucker type transfer seal and transfer method |
| WO2021134579A1 (en) * | 2019-12-31 | 2021-07-08 | 重庆康佳光电技术研究院有限公司 | Detection processing method and system, and storage medium |
| CN111164741A (en) * | 2019-12-31 | 2020-05-15 | 重庆康佳光电技术研究院有限公司 | Detection processing method, system and storage medium |
| CN111128813B (en) * | 2020-01-20 | 2022-10-28 | 福州大学 | Mu LED mass transfer method |
| CN111128813A (en) * | 2020-01-20 | 2020-05-08 | 福州大学 | Mu LED mass transfer method |
| WO2021217607A1 (en) * | 2020-04-30 | 2021-11-04 | 重庆康佳光电技术研究院有限公司 | Bonding method, display backplate and display backplate manufacturing system |
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| CN112967971A (en) * | 2020-05-27 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Micro-LED transfer substrate and preparation method thereof |
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Denomination of invention: Huge transfer method of micro LED chip Effective date of registration: 20220927 Granted publication date: 20201013 Pledgee: Zhongguancun Beijing technology financing Company limited by guarantee Pledgor: Beijing Yimei New Technology Co.,Ltd. Registration number: Y2022990000687 |