CN107887331A - A kind of preparation method of Micro LED light-emitting display devices - Google Patents
A kind of preparation method of Micro LED light-emitting display devices Download PDFInfo
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- CN107887331A CN107887331A CN201711108505.XA CN201711108505A CN107887331A CN 107887331 A CN107887331 A CN 107887331A CN 201711108505 A CN201711108505 A CN 201711108505A CN 107887331 A CN107887331 A CN 107887331A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The present invention relates to a kind of preparation method of Micro LED light-emitting display devices, GaN base epitaxial layer is prepared first, then Micro LED unit device arrays are formed using chip technology, then ohmic contact layer is made, and Micro LED unit device arrays are connected in CMOS or TFT backplate by the way of micro-contact printing, finally by epitaxial layer and GaN base glass sheet by the way of laser glass, and welded metal, be bonded or micro-contact printing by way of Micro LED unit device arrays be connected on another substrate, form Micro LED light-emitting display devices.Compared with prior art, present invention process is simple, yields is high, cost is low, and Micro LED light-emitting display devices can be prepared even on polymer flexibility substrate in glass, silicon substrate.
Description
Technical field
The present invention relates to novel semi-conductor display field, more particularly, to a kind of system of Micro-LED light-emitting display devices
Preparation Method.
Background technology
Micro-LED is that traditional LED structure is carried out into microminiaturization and matrixing, and uses CMOS integrated circuit technology systems
Into drive circuit, come the Display Technique realized each pixel addressing control and be operated alone.Due to Micro-LED technologies
The various indexs such as brightness, life-span, contrast, reaction time, energy consumption, visible angle and resolution ratio are all better than LCD and OLED technology,
The advantages of belonging to self-luminous, simple in construction, small volume and energy-conservation plus it, it is considered as Display Technique of future generation by many production men
And start actively layout.In Micro-LED in preparation process, in order to improve constantly Micro-LED resolution ratio and stable luminescence
Property etc. performance, need constantly its preparation technology is optimized.
Existing conventional metals ball bonding is to prepare metal ball by the ad-hoc location in LED chip and CMOS backboards, so
Alignment welds together afterwards, otherwise this mode extrudes liquid conducting resinl by point gum machine on location, otherwise full wafer is done
Other positions metal electrode material is removed, it is necessary to high accuracy contraposition system by means such as chemical wet etchings again after upper metal electrode material
System, it is difficult to further reduce welding chip size, equipment price is expensive, and efficiency is low, and easily phenomena such as rosin joint occurs, causes good
Product rate is low.
Present invention introduces micro-contact printing process, with reference to chip technology, proposes a kind of Micro-LED light-emitting display devices
Preparation method.The preparation method technique of Micro-LED light-emitting display devices of the present invention is simple, and yield is high, and cost is low.
The content of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of Micro-LED lights
The preparation method of display device, technique is simple, yields is high, cost is low, and can be in glass, silicon substrate even polymer flexible
Property substrate on prepare Micro-LED light-emitting display devices.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of preparation method of Micro-LED light-emitting display devices includes：
S1：Distinguish depositing n-type GaN epitaxial layer, multiple quantum well layer and p-type GaN epitaxial layer successively from the bottom to top in GaN substrate；
S2：Using photoetching, etch tool, made in the n-type GaN epitaxial layer of deposition, multiple quantum well layer and p-type GaN epitaxial layer
Isolation channel, form the unit component array containing multiple unit components；
S3：P-type ohmic contact layer is made on the p-type GaN epitaxial layer of each unit component；
S4：One layer of electrocondution slurry is uniformly coated in a template surface, by the p-type of the electrocondution slurry of the template and each unit component
Ohmic contact layer contacts；
S5：After step S4 template is separated with unit component, the upper surface of the p-type ohmic contact layer of each unit component is uniform
Coat the first conductive paste bed of material；
S6：The first backboard is made, the first backboard is provided with the first conductive electrode of the bar shaped of a plurality of horizontally-parallel distribution, and first leads
The size of electrode and the size of unit component match, and the first backboard containing the first conductive electrode is placed on into unit component
On array and the first conductive electrode aligns with the unit component in transverse direction, by by way of heat cure or ultra-violet curing
The one conductive paste bed of material solidifies so that p-type ohmic contact layer is connected through the first conductive paste bed of material with the first conductive electrode；
S7：The n-type GaN epitaxial layer of unit component and GaN substrate are peeled off by the way of laser lift-off, and in n-type GaN epitaxy
N-type ohmic contact layer is made on the bottom surface of layer；
S8：One layer of electrocondution slurry is uniformly coated again in another template surface, by the electrocondution slurry of another template and each unit
The n-type ohmic contact layer contact of device；
S9：After step S8 template is separated with unit component, the upper surface of the n-type ohmic contact layer of each unit component is uniform
Coat the second conductive paste bed of material；
S10：Making the second backboard, the second backboard is provided with the second conductive electrode of the bar shaped of a plurality of parallel longitudinal distribution, and second
The size of conductive electrode and the size of unit component match, and the second backboard containing the second conductive electrode is placed on into unit device
On part array and the second conductive electrode aligns with the unit component on longitudinal direction, will by way of heat cure or ultra-violet curing
The second conductive paste bed of material solidifies so that n-type ohmic contact layer is connected through the second conductive paste bed of material with the second conductive electrode, is formed
Micro-LED light-emitting display devices.
Template in the step S4 and step S8 uses PDMS templates, the monomer of the PDMS templates and the ratio of crosslinking agent
Example scope is 100:1 to 1:1.
The electrocondution slurry is using any in conductive metal slurry, conductive graphene slurry, conductive carbon nanotube slurry
Kind.
First backboard and the second backboard are using any of blank glass substrate, silicon based substrate, polymeric substrates.
First backboard and the second backboard are provided with CMOS and/or TFT elements.
Compared with prior art, the method comprises the steps of firstly, preparing GaN base epitaxial layer, Micro- is then formed using chip technology
LED unit device array, ohmic contact layer is then made, and by Micro-LED unit components by the way of micro-contact printing
Array is connected in CMOS or TFT backplate, finally by epitaxial layer and GaN base glass sheet by the way of laser glass, and is passed through
The mode Micro-LED unit component arrays of metal welding, bonding or micro-contact printing are connected on another substrate, are formed
Micro-LED light-emitting display devices, there is advantages below：
1st, remarkable advantage of the invention in step S4 and S8 in introducing micro-contact printing process, and combines chip technology, gram
Taking in conventional metals ball bonding that metal ball producing efficiency is low, yields is low, and the problems such as be difficult to further reduce weld size, work
Skill is simple, and yield is high, and cost is low.
2nd, micro-contact printing process is introduced, in micro-contact printing, first using coating one layer the methods of spin coating on substrate
Metal electrode material, then chip is pressed on metal material layer, projected electrode contacts with metal material, can be by metal material
It is transferred on chip electrode, contact portion does not have electrode coated material to other parts, therefore does not need high-precision alignment system
And process, layer of metal electrode material can uniformly be prepared all chips by surface modification, efficiency and yields improve.
Brief description of the drawings
Fig. 1 is the preparation method schematic flow sheet of Micro-LED light-emitting display devices of the present invention；
Fig. 2 is the structural representation for the Micro-LED light-emitting display devices for making finished product；
Fig. 3 is the signal for the first backboard that first electrode is carried in the preparation method of Micro-LED light-emitting display devices of the present invention
Figure；
Fig. 4 is the top view of Micro-LED light-emitting display devices made of the inventive method.
In figure, 11, GaN substrate, 12, n-type GaN epitaxial layer, 13, multiple quantum well layer, 14, p-type GaN epitaxial layer, 15, p-type
Ohmic contact layer, 16, the first conductive paste bed of material, the 17, first template, the 18, first conductive electrode, the 19, first backboard, 110, n-type
Ohmic contact layer, 111, the second conductive paste bed of material, the 112, second template, the 113, second backboard, the 114, second conductive electrode.
Embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of preparation method of Micro-LED light-emitting display devices includes：
S1：Distinguish depositing n-type GaN epitaxial layer 12, multiple quantum well layer 13 and p-type successively from the bottom to top in clean GaN substrate 11
GaN epitaxial layer 14；
S2：Using photoetching, etch tool, in the n-type GaN epitaxial layer 12 of deposition, multiple quantum well layer 13 and p-type GaN epitaxial layer 14
Upper making isolation channel, form the Micro-LED unit component arrays containing multiple unit components；
S3：P-type ohm is made above the p-type GaN epitaxial layer 14 of each unit component in Micro-LED unit component arrays to connect
Contact layer 15；
S4：One layer of electrocondution slurry is uniformly coated on a clean surface of the first template 17, by Micro-LED unit component arrays
P-type ohmic contact layer 15 is lain on electrocondution slurry, will the electrocondution slurry of first template 17 and the p-type of each unit component
Ohmic contact layer 15 contacts；
S5：After step S4 the first template 17 is separated with unit component, i.e. Micro-LED unit components array and electrocondution slurry
After separating, uniformly one layer of electrocondution slurry of coating, formation first are conductive for the upper surface of the p-type ohmic contact layer 15 of each unit component
Pulp layer 16；
S6：Clean first backboard 19 is made, the first backboard 19 is provided with the first conduction of the bar shaped of a plurality of horizontally-parallel distribution
Electrode 18, the size of the first conductive electrode 18 and the size of unit component match, by first containing the first conductive electrode 18
Backboard 19 is placed on unit component array and the first conductive electrode 18 aligns with the unit component in transverse direction, i.e., by S4
Sample alignment is placed on the first substrate containing the first conductive electrode 18, by the by way of heat cure or ultra-violet curing
The electrocondution slurry solidification of the one conductive paste bed of material 16 so that p-type ohmic contact layer 15 is conductive through the first conductive paste bed of material 16 and first
Electrode 18 connects；
S7：The n-type GaN epitaxial layer 12 of unit component is peeled off with GaN substrate 11 by the way of laser lift-off, and in n-type GaN
N-type ohmic contact layer 110 is made on the bottom surface of epitaxial layer 12；
S8：One layer of electrocondution slurry is uniformly coated again on a clean surface of the second template 112, by the conduction of second template 112
Slurry contacts with the n-type ohmic contact layer 110 of each unit component；
S9：After step S8 the second template 112 is separated with unit component, the n-type ohmic contact layer 110 of each unit component
Upper surface uniformly coats the second conductive paste bed of material 111；
S10：The second backboard 113 is made, the second backboard 113 is provided with the second conductive electrode of the bar shaped of a plurality of parallel longitudinal distribution
114, the size of the second conductive electrode 114 and the size of unit component match, by second back of the body containing the second conductive electrode 114
Plate 113 is placed on unit component array and the second conductive electrode 114 aligns with the unit component on longitudinal direction, passes through heat cure
Or the mode of ultra-violet curing solidifies the second conductive paste bed of material 111 so that n-type ohmic contact layer 110 is through the second electrocondution slurry
Layer 111 is connected with the second conductive electrode 114, forms Micro-LED light-emitting display devices.
Micro-LED unit components can also be connected to second by step S8-S10 by way of metal bonding, welding
Micro-LED light-emitting display devices are formed on backboard 113.
The second template 112 in the first template 17 and step S8 in step S4 uses PDMS（Dimethyl silicone polymer）
Template, the monomer of PDMS templates and the ratio of crosslinking agent determine that scope is 100 by the hardness requirement of dimethyl silicone polymer template:
1 to 1:1.
Electrocondution slurry is using conductive metal slurry, conductive graphene slurry, conductive carbon nanotube in step S4 and step S8
Any of slurry.
First backboard 19 and the second backboard 113 are using any in blank glass substrate, silicon based substrate, polymeric substrates
Kind, or prepare any of the above-described kind of substrate for having CMOS and/or TFT.
It is detailed below in conjunction with drawings and examples in order to allow those skilled in the art to be better understood from technical scheme
Illustrate a kind of preparation method of Micro-LED light-emitting display devices.The preparation method bag of a certain Micro-LED light-emitting display devices
Include the following steps：
（One）Chip extension
It is Win-10 by volume that GaN substrate 11, which is placed in,:DI water=3:It is 32KHz's using frequency in 97 cleaning fluids
Ultrasonic machine cleans 15min, and after spraying 2min, then it is Win-41 to be placed in volume ratio:DI water=5:In 95 cleaning fluids, utilize
The ultrasonic machine that frequency is 40KHz cleans 10min, and after circulating running water spray rinsing 2min, it is the super of 28KHz to recycle frequency
Sound machine cleans 10min in DI pure water, and it is standby that insulation more than 30min in 50 DEG C of cleaning ovens is placed in after nitrogen gun dries up.
As shown in S1 in Fig. 1, using metal organic chemical vapor deposition（MOCVD）Method, sunk respectively on the clean substrate of GaN substrate 11
Product n-type GaN epitaxial layer 12（Cushion is formed between substrate and n-type GaN epitaxial layer 12）, multiple quantum well layer 13, p-type GaN epitaxy
Layer 14, it is preferred that multiple quantum well layer 13 is the InGaN/GaN structures in 5 cycles in the present embodiment.
（Two）It is prepared by isolation channel
One layer of photoresist RZJ-304 is uniformly coated on epitaxial layer by the way of spin coating, after 110 DEG C are toasted 20 minutes, is passed through
Exposure-development forms isolation groove pattern, and epitaxial wafer is performed etching using inductive reactive ion etching machine, forms isolation
Groove, as shown in S2 in Fig. 1.
（Three）It is prepared by p-type ohmic contact layer 15
The pattern of p-type ohmic contact layer 15 is formed in epitaxial layer using photoetching development method, prepared by the way of electron beam evaporation plating
Ni/Au metal levels, photoresist is washed using organic solvent, and short annealing forms p-type ohmic contact layer 15, such as S3 in Fig. 1
It is shown.
（Four）The micro-contact printing of electrocondution slurry
Press monomer and crosslinking agent 10:1 ratio row configuration dimethyl silicone polymer（PDMS）Mixture, it is spin-coated on cleaned glass substrate
On, it is put into 80 DEG C of baking ovens more than two hours, is taken out after PDMS is fully cured, obtain the first PDMS templates.In the first PMDS moulds
Plate surface uniformly coats the layer of transparent conductive paste bed of material.The above-mentioned sample for preparing p-type ohmic contact layer 15 is tipped upside down on transparent
On the conductive paste bed of material and separate, the surface of p-type ohmic contact layer 15 is uniformly coated the layer of transparent conductive paste bed of material, i.e., first is conductive
Pulp layer 16, as shown in S4-S5 in Fig. 1.
（Five）It is bonded with aliging for backboard
A cleaned glass substrate is taken, indium oxide layer tin is prepared using magnetron sputtering（ITO）Transparent conductive electrode, carved using photoetching
Etching technique forms parallel electrode pattern on conductive film, as shown in figure 3, horizontally-parallel uniform more rules on the first backboard 19
First conductive electrode 18 of shape, the width of the first conductive electrode 18 and the width of unit component are consistent.Micro-LED is mono-
The p ends of component array（That is the p-type ohmic contact layer 15 of the first conductive paste of band bed of material 16）Alignment is fitted in parallel first and led
On electrode 18, it will be placed on containing the first substrate of the first conductive electrode 18 on unit component array and the first conductive electrode
The long side of unit component in 18 long side and transverse direction aligns, and is connected to by ultraviolet or heat cure on the first backboard 19,
As shown in S6 in Fig. 1.
（Six）The stripping of epitaxial substrate
Laser lift-off is carried out to Micro-LED unit components array and GaN substrate 11 using 248nm or so gas laser,
As shown in S7 in Fig. 1.
（Seven）The same step of principle（Three）-（Five）, by Micro-LED unit component arrays by the way of micro-contact printing
N ends（That is the n-type ohmic contact layer 110 of the second conductive paste of band bed of material 111）It is connected on the silicon substrate backboard containing CMOS, second leads
The width of electrode 114 and the length of unit component are consistent, and the second substrate containing the second conductive electrode 114 is placed on
The short side of unit component on unit component array and in the long side and transverse direction of the second conductive electrode 114 aligns, in Fig. 1
Shown in S8-S9, the Micro-LED light-emitting display devices as shown in S10, Fig. 2 and Fig. 4 in Fig. 1 are formed.
The present invention provides preferred embodiment, but should not be considered limited to embodiment set forth herein.In figure, in order to
Layer and the thickness in region are clearly exaggerated, but should not be considered as strictly reflecting the ratio pass of physical dimension as schematic diagram
System.
It is the schematic diagram of the idealized embodiments of the present invention in this reference chart, the embodiment shown in the present invention should not be recognized
For the given shape in the region being only limitted to shown in figure, but including resulting shape, such as deviation caused by manufacture.At this
Represented in embodiment with rectangle, the expression in figure is schematical, but this should not be considered as limiting the scope of the invention.
The object, technical solutions and advantages of the present invention are further described by above-listed preferred embodiment, are answered
Understand, the foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God any modification, equivalent substitution and improvements made etc., should be included in the scope of the protection with principle.
Claims (5)
- A kind of 1. preparation method of Micro-LED light-emitting display devices, it is characterised in that including：S1：Distinguish depositing n-type GaN epitaxial layer, multiple quantum well layer and p-type GaN epitaxial layer successively from the bottom to top in GaN substrate；S2：Using photoetching, etch tool, made in the n-type GaN epitaxial layer of deposition, multiple quantum well layer and p-type GaN epitaxial layer Isolation channel, form the unit component array containing multiple unit components；S3：P-type ohmic contact layer is made on the p-type GaN epitaxial layer of each unit component；S4：One layer of electrocondution slurry is uniformly coated in a template surface, by the p-type of the electrocondution slurry of the template and each unit component Ohmic contact layer contacts；S5：After step S4 template is separated with unit component, the upper surface of the p-type ohmic contact layer of each unit component is uniform Coat the first conductive paste bed of material；S6：The first backboard is made, the first backboard is provided with the first conductive electrode of the bar shaped of a plurality of horizontally-parallel distribution, and first leads The size of electrode and the size of unit component match, and the first backboard containing the first conductive electrode is placed on into unit component On array and the first conductive electrode aligns with the unit component in transverse direction, by by way of heat cure or ultra-violet curing The one conductive paste bed of material solidifies so that p-type ohmic contact layer is connected through the first conductive paste bed of material with the first conductive electrode；S7：The n-type GaN epitaxial layer of unit component and GaN substrate are peeled off by the way of laser lift-off, and in n-type GaN epitaxy N-type ohmic contact layer is made on the bottom surface of layer；S8：One layer of electrocondution slurry is uniformly coated again in another template surface, by the electrocondution slurry of another template and each unit The n-type ohmic contact layer contact of device；S9：After step S8 template is separated with unit component, the upper surface of the n-type ohmic contact layer of each unit component is uniform Coat the second conductive paste bed of material；S10：Making the second backboard, the second backboard is provided with the second conductive electrode of the bar shaped of a plurality of parallel longitudinal distribution, and second The size of conductive electrode and the size of unit component match, and the second backboard containing the second conductive electrode is placed on into unit device On part array and the second conductive electrode aligns with the unit component on longitudinal direction, will by way of heat cure or ultra-violet curing The second conductive paste bed of material solidifies so that n-type ohmic contact layer is connected through the second conductive paste bed of material with the second conductive electrode, is formed Micro-LED light-emitting display devices.
- 2. the preparation method of a kind of Micro-LED light-emitting display devices according to claim 1, it is characterised in that described Template in step S4 and step S8 uses PDMS templates, and the monomer of the PDMS templates and the proportion of crosslinking agent are 100: 1 to 1:1.
- 3. the preparation method of a kind of Micro-LED light-emitting display devices according to claim 1, it is characterised in that described Electrocondution slurry is using any of conductive metal slurry, conductive graphene slurry, conductive carbon nanotube slurry.
- 4. the preparation method of a kind of Micro-LED light-emitting display devices according to claim 1, it is characterised in that described First backboard and the second backboard are using any of blank glass substrate, silicon based substrate, polymeric substrates.
- 5. the preparation method of a kind of Micro-LED light-emitting display devices according to claim 4, it is characterised in that described First backboard and the second backboard are provided with CMOS and/or TFT elements.
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