CN113782561B - Micro-LED display device with high brightness and high reliability - Google Patents

Micro-LED display device with high brightness and high reliability Download PDF

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Publication number
CN113782561B
CN113782561B CN202111102022.5A CN202111102022A CN113782561B CN 113782561 B CN113782561 B CN 113782561B CN 202111102022 A CN202111102022 A CN 202111102022A CN 113782561 B CN113782561 B CN 113782561B
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micro
electrode
tft
led chip
transistor
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CN113782561A (en
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郭伟杰
郑曦
童长栋
高玉琳
郑振耀
吕毅军
陈忠
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Xiamen University
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Xiamen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Abstract

The invention discloses a Micro-LED display device with high brightness and high reliability, which comprises a double-layer wiring bearing substrate and a TFT backboard which are arranged up and down, wherein each pixel unit is provided with a Micro-LED chip and a first transistor which are separated, and the Micro-LED chip and the first transistor are arranged on the double-layer wiring bearing substrate; the upper surface of the TFT backboard is provided with a TFT unit corresponding to each pixel unit; the double-layer wiring bearing substrate is provided with a conductive via hole corresponding to each pixel unit, and each TFT unit is electrically connected with the first transistor of the corresponding pixel unit through the conductive via hole; the TFT unit is used for gating the corresponding pixel unit, the first transistor is used for supplying power to the corresponding pixel unit, heat dissipation can be enhanced, leakage current is reduced, current compensation is achieved, and Micro-LED display with high brightness, high efficiency and high reliability can be achieved.

Description

Micro-LED display device with high brightness and high reliability
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a Micro-LED display device with high brightness and high reliability.
Background
The LED has the remarkable advantages of energy conservation, small volume, long service life, rich colors, reliable performance and the like. In recent years, various Micro-LED displays have received general attention, and have become an internationally recognized next generation display technology. The Micro-LED display is characterized in that Micro-LED chips are closely arranged into an array one by one, each Micro-LED chip is independently driven to light to emit light, so that excellent display effect is achieved, flexible, transparent and high-resolution display can be realized, and the power consumption of the Micro-LED display is only about 10% of that of a liquid crystal panel.
Each Micro-LED chip is driven to light independently, and a separate control element is configured for each Micro-LED chip by means of an active driving back plate. Existing drive backplanes include CMOS (complementary metal oxide semiconductor) backplanes, TFT (thin film transistor) backplanes. The CMOS backboard is produced by adopting an integrated circuit wafer process, can realize pixel spacing of 5 microns or even smaller, can realize Micro-LED display with high resolution, but has several defects: firstly, the integrated circuit wafer process is adopted for production, and the cost of the driving backboard is high; secondly, the display of large size cannot be realized due to the limitation of the size of the wafer; third, since the CMOS back plate is based on silicon material, it cannot transmit light, and is not suitable for transparent display. The TFT backboard can realize large-area production, and the substrate adopts glass, so that transparent display can be realized, but the TFT backboard has several defects: firstly, because the current of the TFT is limited, micro-LED display with high brightness is difficult to realize; secondly, heat emitted by the Micro-LED chip is conducted out of the TFT backboard to dissipate heat, so that the temperature of a TFT device on the TFT backboard is increased to generate I-V characteristic drift; thirdly, the Micro-LED chip irradiates light to the TFT backboard, so that a TFT device on the TFT backboard generates light leakage current and I-V characteristic drift occurs; fourth, the TFT backplane at least needs to adopt a 2T1C architecture, that is, each pixel needs 1 TFT to gate, and 1 TFT to supply power, but because of insufficient uniformity of TFT production, a complex compensation design needs to be performed, and usually, each pixel needs 4 to 7 TFTs, which results in complex driving, large pixel size, and limited electron mobility of the TFT, which results in limited current supplied to the Micro-LED chip, and difficulty in improving brightness of the display screen.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the Micro-LED display device with high brightness and high reliability, which can enhance heat dissipation, reduce leakage current and realize current compensation, thereby realizing Micro-LED display with high brightness, high efficiency and high reliability.
In order to achieve the above object, the technical scheme of the present invention is as follows:
a Micro-LED display device with high brightness and high reliability realizes display through a plurality of pixel units arranged in an array mode, and the Micro-LED display device comprises a double-layer wiring bearing substrate and a TFT backboard, wherein the double-layer wiring bearing substrate and the TFT backboard are arranged up and down; the upper surface of the TFT backboard is provided with a TFT unit corresponding to each pixel unit; the double-layer wiring bearing substrate is provided with a conductive via hole corresponding to each pixel unit, and each TFT unit is electrically connected with the first transistor of the corresponding pixel unit through the conductive via hole; the TFT unit is used for gating the corresponding pixel unit, and the first transistor is used for supplying power to the Micro-LED chip in the corresponding pixel unit.
Optionally, the dual-layer wiring carrier substrate is provided with VDD wiring and GND wiring; the Micro-LED chip has a first electrode and a second electrode, and the first transistor has a first source, a first drain and a first gate; the first electrode is electrically conductive to the VDD wiring, the second electrode is electrically conductive to the first source, the first gate is electrically conductive to the TFT unit, and the first drain is electrically conductive to the GND wiring.
Optionally, the upper surface of the double-layer wiring bearing substrate is provided with a first electrode pad, a second electrode pad, a source electrode pad, a gate electrode pad and a drain electrode pad; the Micro-LED chip and the first transistor are arranged on the double-layer wiring bearing substrate in a flip-chip mode, the first electrode, the second electrode, the first source electrode, the first drain electrode and the first grid electrode are welded with the first electrode bonding pad, the second electrode bonding pad, the source electrode bonding pad, the grid electrode bonding pad and the drain electrode bonding pad in a one-to-one correspondence mode, and the grid electrode bonding pad is electrically conducted with the conductive through hole.
Optionally, the TFT unit includes a second transistor structure and a capacitor structure, where the second transistor structure includes a second source electrode, a second drain electrode, and a second gate electrode, and the second drain electrode is electrically connected to the first gate electrode through the conductive via hole; the capacitor structure is connected in parallel between the first grid electrode and the first drain electrode; the TFT backboard is provided with a grounding end, and the grounding end is conducted with the GND wiring.
Optionally, the dual layer wiring carrier substrate is opaque.
Optionally, the top surface and the side wall surface of the first transistor are coated with a light shielding packaging matrix.
Optionally, the surface other than the upper surface of the Micro-LED chip, the upper surface of the double-layer wiring bearing substrate and the surface of the first transistor are integrally coated with a light shielding packaging matrix.
Optionally, the Micro-LED chip includes a red light Micro-LED chip, a green light Micro-LED chip and a blue light Micro-LED chip, and the corresponding pixel units are a red light pixel unit, a green light pixel unit and a blue light pixel unit.
Optionally, the Micro-LED chips are all blue light Micro-LED chips, part of the blue light Micro-LED chips form blue light pixel units, and the other part of the blue light Micro-LED chips form red light pixel units and green light pixel units by arranging fluorescent conversion layers, grooves are arranged at corresponding positions of the blue light Micro-LED chips on the shading packaging substrate, and the fluorescent conversion layers are arranged in the grooves.
Optionally, the light emitted by the Micro-LED chip is emitted downwards, the fluorescent conversion layer is arranged between TFT units of the TFT back plate and vertically aligned with the Micro-LED chip, the double-layer wiring bearing substrate and the TFT back plate are made of light-transmitting materials, and a transparent adhesive layer is filled between the double-layer wiring bearing substrate and the TFT back plate.
The beneficial effects of the invention are as follows:
1) By splitting the driving architecture into two parts, hybrid driving is achieved by using TFTs and discrete first transistors, the TFTs being responsible for gating the pixel cells to be driven, the discrete first transistors being responsible for powering the pixel cells to be driven. The integration of a driving framework is maintained, the large current capacity of the first discrete transistor can be exerted, and the problem that the output current of the thin film transistor structure in the traditional pure TFT backboard is limited is avoided. The power supply of larger current of the Micro-LED chip can be realized, so that high-brightness display is realized;
2) The method not only plays the large-area production advantage of the TFT substrate, but also avoids the characteristic drift problem of the TFT. The stability of the electrical characteristics of the product is improved, and high reliability is realized;
3) The Micro-LED chip and the first transistor can be welded on the upper surface of the bearing substrate by adopting the same die bonding or mass transfer process, the process compatibility is high, the welding is stable and reliable, and when the lighting test of the whole screen finds that a certain pixel unit fails or emits light unevenly, the Micro-LED chip and the first transistor element of the pixel unit can be replaced and repaired conveniently, and the yield is high;
4) The first transistor is welded on the upper surface of the bearing substrate by adopting a die bonding or mass transfer process, and the appropriate BIN welding of the first transistor can be carried out according to the I-V characteristic mapping of the TFT device on the TFT backboard, so that the 2T1C driving characteristic parameters combined by the first transistor and the TFT device have good consistency, the complex compensation circuit required by the traditional pure TFT driving backboard is avoided, the framework is simple, and the cost is low;
5) The TFT is thermally isolated from the Micro-LED chip by the bearing substrate, so that the problem of I-V characteristic drift caused by temperature rise of a TFT device on a TFT backboard is avoided;
6) The upper surface of the direct bearing substrate is distributed with full-color pixels, so that the full-color display of red, green and blue colors in various pixel array arrangement modes can be conveniently realized.
Drawings
Fig. 1 is a schematic plan view of a pixel unit of a Micro-LED display device according to an embodiment, where connection relations of devices in the pixel unit are shown;
fig. 2 is an exploded schematic view of the Micro-LED display device of embodiments 1 to 2 (a cross-sectional view showing one pixel unit is shown in the figure);
fig. 3 is a schematic diagram of an assembly structure of a Micro-LED display device of embodiments 1 to 2 (a cross-sectional view of one pixel unit is shown in the drawing);
FIG. 4 is a schematic diagram of a 2T1C driving architecture circuit of a Micro-LED display device according to an embodiment;
fig. 5 is a schematic diagram of a pixel unit structure of a Micro-LED display device of embodiment 3 (a cross-sectional view of three pixel units is shown in the figure);
fig. 6 is a schematic diagram of a pixel unit structure of a Micro-LED display device of embodiment 4 (a cross-sectional view of three pixel units is shown in the figure);
fig. 7 is a schematic diagram of a pixel unit structure of a Micro-LED display device of embodiment 5 (a cross-sectional view of three pixel units is shown in the figure);
fig. 8 is a schematic diagram of a pixel unit structure of a Micro-LED display device of embodiment 6 (a cross-sectional view of three pixel units is shown in the figure);
fig. 9 is a schematic diagram of a pixel unit structure of a Micro-LED display device of embodiment 7 (a cross-sectional view of three pixel units is shown in the figure);
fig. 10 is a schematic diagram of a pixel unit structure of a Micro-LED display device of embodiment 8 (a cross-sectional view of three pixel units is shown in the figure).
Detailed Description
The invention is further explained below with reference to the drawings and specific embodiments. The drawings of the present invention are merely schematic to facilitate understanding of the present invention, and specific proportions thereof may be adjusted according to design requirements. The definition of the context of the relative elements and the front/back of the figures described herein should be understood by those skilled in the art to refer to the relative positions of the elements and thus all the elements may be reversed to represent the same elements, which are all within the scope of the present disclosure.
Example 1
Referring to fig. 1 to 3, the Micro-LED display device of embodiment 1 is realized by a plurality of pixel units arranged in an array, and is provided with a Micro-LED chip 800, a first transistor 900, a TFT back plate 700, and a double-layer wiring carrier substrate 600; the dual-layer wiring carrier substrate 600 and the TFT back plate 700 are disposed up and down, each pixel unit has a separate Micro-LED chip 800 and first transistor 900, and the Micro-LED chip 800 and first transistor 900 are disposed on the dual-layer wiring carrier substrate 600. The TFT unit 701 is disposed on the upper surface of the TFT backplane 700 corresponding to each pixel unit.
The Micro-LED chip 800 is provided with a surface light emitting layer 1, a first semiconductor layer 2, a multiple quantum well layer 3, a second semiconductor layer 4, an insulating layer 5, a first electrode 6, and a second electrode 7. The surface light-emitting layer 1 is an epitaxial buffer layer or an epitaxial substrate layer of the Micro-LED chip.
The first transistor 900 is provided with a transistor substrate 11, a GaN layer 12, an AlGaN layer 13, an AlN spacer layer 14, and an AlGaN barrier layer 15. Conventionally, the first transistor 900 has a first source, a first drain, and a first gate, the dual-layer wiring carrier substrate 600 has a first electrode pad 8, a second electrode pad 9, a source pad 17, a gate pad 18, and a drain pad 19, and the pads are connected to the first electrode 6, the second electrode 7, the first source, the first gate, and the first drain by bump 10 in a one-to-one correspondence. The dual-layer wiring carrier substrate 600 is further provided with conductive vias 20. The gate pad 18 is disposed on the conductive via 20 and electrically connected thereto.
The TFT backplane 700 is provided with a second transistor structure and a capacitor structure, specifically comprising: the glass backboard 21, the transparent medium 22, the second grid electrode 23, the semiconductor channel layer 24, the second source electrode 25, the second drain electrode 26, the TFT insulating layer 27, the storage capacitor 28, the transparent medium 29 and the transparent electrode 30, wherein the second drain electrode 26 is electrically conducted with the transparent electrode 30, and the transparent electrode 30 is electrically conducted with the first transistor 900 through the conductive via hole 20.
Fig. 1 is a schematic plan view of a pixel unit, provided with VDD wiring 31, gnd wiring 32, micro-LED chip 800, first transistor 900, conductive via 20; the P electrode (one of the first electrode 6 and the second electrode 7) of each Micro-LED chip 800 is electrically connected to the VDD wiring 31 through a bonding pad, the N electrode (the other of the first electrode 6 and the second electrode 7) of the Micro-LED chip is directly electrically connected to the source bonding pad 17 of the first transistor 800, and the first gate of the first transistor 800 is electrically connected to the transparent electrode 30 of the TFT back plate 700 through the gate bonding pad 18 and the conductive via hole 20, thereby connecting the first gate to the second drain. The first drain of the first transistor is on with the GND wiring 32 (ground terminal) of the two-layer wiring carrier substrate 600;
the Micro-LED chip 800 and the first transistor 900 are all discrete devices, and are flip-chip bonded on the respective bonding pads. Discrete as described herein means that the two are independent of each other, and that the replacement of one device does not affect the presence of the other device.
The edge of the TFT backplane 700 is provided with a TFT backplane ground that is connected to the GND wiring of the double-layer wiring carrier substrate 600 through an external wire. The external lead is a flexible circuit board.
The dual-layer wiring carrier substrate 600 is opaque. The specific material is a multilayer glass fiber copper-clad circuit board, or a flexible circuit board, or a ceramic-based copper-clad circuit board, or a silicon wafer. Photon emitted by the Micro-LED chip 800 is prevented from irradiating the TFT unit 701 to generate photo-generated carriers, dark current is avoided, and reliability is improved.
Referring to fig. 4, the present embodiment is implemented by dividing the driving architecture into two parts, namely, LED and T2 (first transistor) on the double-layer wiring carrier substrate, and T1 and capacitance C on the TFT back plate (part in the dashed line box of fig. 1). The mixed driving is realized by adopting a TFT and a discrete first transistor, the TFT is responsible for gating the pixel unit to be driven, and the discrete first transistor is responsible for supplying power to the pixel unit to be driven. The large-area production advantage of the TFT substrate is exerted, and the characteristic drift problem of the TFT is avoided. The driving structure maintains the integrity of the driving structure, can exert the characteristics of large current and flexible replacement of the first discrete transistor, and avoids the problem of limited T2 output current in the traditional pure TFT backboard.
In the display device, pixel units are arranged in an array to realize display. In the display device, there are Micro-LED chips 800 that emit visible light of three different wavelengths, green, and blue, respectively, and there are three different pixel units of red, green, and blue, respectively, according to the emission wavelength of the Micro-LED chips 800.
Preferably, the blue light Micro-LED chip emits blue light around 467nm, the green light Micro-LED chip emits green light around 532nm, and the green light Micro-LED chip emits red light around 625 nm.
For blue light and green light Micro-LED chips, the first semiconductor layer 11 comprises a layer of GaN doped with n type, the first semiconductor layer 11 also comprises a buffer layer, and the multiple quantum well luminous layer 3 is formed by a chemical formula of Al x In y Ga z N (wherein x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1) are alternately stacked with semiconductor layers of different compositions and thickness at a nano level, the second semiconductor layer 4 includes one layer ofThe second semiconductor layer 4 contains p-doped GaN and an electron blocking layer. For a red light Micro-LED chip, the multi-quantum well luminous layer 3 is formed by alternately stacking semiconductor layers with different components and thicknesses in a nanometer level, wherein the chemical formula of the semiconductor layers is AlxGayInzP (x+y+z=1, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and z is more than or equal to 0 and less than or equal to 1).
The bump 10 is made of any one or more of titanium, aluminum, gold, nickel, silver, and the like. The glass back plate 21 of the TFT back plate is made of a transparent material, and may be any one of glass, sapphire, silicon carbide, and the like. The transparent electrode layer 30 is made of tin-doped indium oxide.
Example two
Referring to fig. 2, in the present embodiment, the first transistor is a HEMT transistor, and a transistor substrate 11, a GaN layer 12, an AlGaN layer 13, an AlN spacer layer 14, and an AlGaN barrier layer 15 are provided. Al content in Al and Ga element in the AlGaN layer 13 is 15%, ga content is 85%; the AlGaN barrier layer 14 has an Al content of 30% and a Ga content of 70%.
The remainder was the same as in example 1.
Example III
Referring to fig. 5, in the present embodiment, the pixel unit 100, the pixel unit 200, and the pixel unit 300 may be a blue pixel unit, a green pixel unit, and a red pixel unit, respectively. In the pixel array of the display device, the outer side wall of each first transistor 900 is coated with the light shielding packaging matrix 37, so that the first transistors 900 are shielded from light, photon emitted by the Micro-LED chip 800 is prevented from irradiating the first transistors 900 to generate photo-generated carriers, dark current is avoided, and reliability is improved.
The remainder is the same as in embodiment one.
Example IV
As shown in fig. 6, the Micro-LED chips 800 of the display device are all blue Micro-LED chips. The red pixel unit and the green pixel unit are obtained by means of fluorescence conversion.
Pits are directly etched on the surface light-emitting layer of the Micro-LED chip, then a metal reflecting layer 35 is added, and a transparent matrix 36 is arranged in the pits, so that the blue light pixel unit 100 is obtained.
Further, for the green and red pixel units, a green fluorescence conversion layer 38 (including a transparent matrix and a green fluorescent material) and a red fluorescence conversion layer 39 (including a transparent matrix and a red fluorescent material) are respectively disposed in the pits to obtain a green pixel unit 200 and a red pixel unit 300;
the rest is the same as the embodiment.
Example five
As shown in fig. 7, pits are directly etched on the surface light-emitting layer of the Micro-LED chip, then a metal reflective layer 35 is added, and a transparent substrate 36 is disposed in the pits, so as to obtain a blue pixel unit 100, a green pixel unit 200, and a red pixel unit 300.
The rest is the same as the embodiment.
Example six
As shown in fig. 8, the upper surface of the double-layer wiring carrier substrate 600 is covered with the light-shielding encapsulation matrix 37 except for the region corresponding to the top surface of the Micro-LED chip 800. A coherent light shielding encapsulation matrix 37 is formed. That is, the encapsulation matrix 37 integrally covers the exposed upper surface of the double-layer wiring carrier substrate 600 and the surface other than the top surface area of the Micro-LED chip 800 in addition to the surface of the first transistor 900, thereby improving the contrast ratio of the display device, realizing the waterproof and anti-corrosion protection of the Micro-LED chip, and improving the reliability.
The rest is the same as the embodiment.
Example seven
As shown in fig. 9, on the basis of embodiment 6, a light shielding encapsulation substrate 37 is formed with grooves at positions corresponding to the top surface of the Micro-LED chip 800.
For a blue pixel cell, a transparent matrix 36 is disposed within the recess of the Micro-LED chip, resulting in a blue pixel cell 100. For the green and red pixel units, a green fluorescence conversion layer 38 (including a transparent matrix and a green fluorescent material) and a red fluorescence conversion layer 39 (including a transparent matrix and a red fluorescent material) are respectively disposed in the pits to obtain a green pixel unit 200 and a red pixel unit 300.
The remainder was the same as in example six.
Example eight
As shown in fig. 10, the double-layer wiring carrier substrate 600 is a transparent substrate made of glass.
The Micro-LED chip 800 firstly adopts the transparent glue layer 810 to cover all the side walls, then covers the reflective packaging layer 820 on the whole surface of the double-layer wiring bearing substrate 600, and the light emitted by the Micro-LED chip 800 is emitted from the direction of the lower surface of the transparent double-layer wiring bearing substrate 600.
The Micro-LED chips 800 are blue light Micro-LED chips.
A fluorescent material area is arranged between adjacent TFT units 701 on the TFT backplane 700, the fluorescent material area comprises a dam 830, the dam 830 forms a groove, and fluorescent conversion materials are filled in the groove. For the blue pixel unit, a transparent matrix 840 is disposed in the groove of the Micro-LED chip to obtain the blue pixel unit. For the green and red pixel units, a green fluorescent conversion layer 841 (including a transparent substrate and a green fluorescent material) and a red fluorescent conversion layer 842 (including a transparent substrate and a red fluorescent material) are respectively disposed in the grooves, so as to obtain a green pixel unit and a red pixel unit respectively.
A transparent adhesive layer 850 is filled between the upper surface of the TFT backplane 700 and the lower surface of the dual-layer wiring carrier substrate 600.
Light emitted from the Micro-LED chip 800 passes through the transparent double-layer wiring carrier substrate 600, the transparent adhesive layer 850, the transparent matrix 840 (or the green fluorescent light conversion layer 841 or the red fluorescent light conversion layer 842), the glass back plate 21, and exits from below the glass back plate 21 in this order.
The remainder is the same as in embodiment one.
A significant advantage of this solution is that quantum fluorescent materials can be used. Quantum dots are ideal fluorescent conversion materials for realizing high-color-gamut display, but have the fatal defect that packaging protection for isolating water and oxygen is needed, and once water and oxygen in air permeate into the quantum dots from a protection layer, the quantum dots rapidly quench fluorescence and cannot emit light. Conventional polymer coating can not thoroughly isolate water and oxygen infiltration in air, and can cause water and oxygen infiltration to a certain extent. Glass is an all-inorganic material and is the most ideal water-oxygen barrier material. The green fluorescent light conversion layer 841 and the red fluorescent light conversion layer 842 are sealed between the double-layer wiring carrier substrate 600 and the glass back plate 21, so that optimal water and oxygen isolation sealing is realized, and the green fluorescent light conversion layer 841 and the red fluorescent light conversion layer 842 can be radiated by the glass back plate 21. And the high-reliability quantum dot fluorescence conversion Micro-LED display is realized.
The green fluorescent material is InP quantum dots, cdSe/ZnS core-shell structure quantum dots and perovskite structure CsPbX 3 Any one of (x=cl, br, I) quantum dots; eu (Eu) 2+ Doped beta-Sialon, eu 2+ Doping Li 2 CaSiO 4 Any one of them; or a combination of any two of the above, or a combination of any three.
The red fluorescent material is rare earth ion Eu 2+ Doped CaAlSiN 3 、Eu 2+ Doping Ca 0.8 Li 0.2 Al 0.8 Si 1.2 N 3 、Eu 2+ Doping (Ca, sr, ba) 2 Si 5 N 8 :Eu 2+ Any one of them; inP quantum dot, cdSe/ZnS core-shell structure quantum dot and perovskite structure CsPbX 3 Any one of (x=cl, br, I) quantum dots; mn (Mn) 4+ Doping K 2 SiF 6 Phosphor, mn 4+ Doping K 2 GeF 6 Phosphor, mn 4+ Doping K 2 TiF 6 Any one of fluorescent powder; pr (Pr) 3+ Doped YAG fluorescent powder; or a combination of any two of the above, or a combination of any three.
The above embodiments are only used to further illustrate a Micro-LED display device with high brightness and high reliability, but the present invention is not limited to the embodiments, and any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention falls within the protection scope of the technical solution of the present invention.

Claims (10)

1. The utility model provides a Micro-LED display device of high luminance high reliability, realizes showing its characterized in that through a plurality of pixel units that the array was arranged: each pixel unit is provided with a Micro-LED chip and a first transistor which are separated, the Micro-LED chip and the first transistor are arranged on the double-layer wiring bearing substrate, and an electrode of the Micro-LED chip and an electrode of the first transistor are welded on the double-layer wiring bearing substrate respectively; the upper surface of the TFT backboard is provided with a TFT unit corresponding to each pixel unit; the double-layer wiring bearing substrate is provided with a conductive via hole corresponding to each pixel unit, and each TFT unit is electrically connected with the first transistor of the corresponding pixel unit through the conductive via hole; the TFT unit is used for gating the corresponding pixel unit, and the first transistor is used for supplying power to the Micro-LED chip in the corresponding pixel unit.
2. The Micro-LED display device of claim 1, wherein: the double-layer wiring bearing substrate is provided with a VDD wiring and a GND wiring; the Micro-LED chip has a first electrode and a second electrode, and the first transistor has a first source, a first drain and a first gate; the first electrode is electrically conductive to the VDD wiring, the second electrode is electrically conductive to the first source, the first gate is electrically conductive to the TFT unit, and the first drain is electrically conductive to the GND wiring.
3. The Micro-LED display device of claim 2, wherein: the upper surface of the double-layer wiring bearing substrate is provided with a first electrode pad, a second electrode pad, a source electrode pad, a grid electrode pad and a drain electrode pad; the Micro-LED chip and the first transistor are arranged on the double-layer wiring bearing substrate in a flip-chip mode, the first electrode, the second electrode, the first source electrode, the first drain electrode and the first grid electrode are welded with the first electrode bonding pad, the second electrode bonding pad, the source electrode bonding pad, the grid electrode bonding pad and the drain electrode bonding pad in a one-to-one correspondence mode, and the grid electrode bonding pad is electrically conducted with the conductive through hole.
4. The Micro-LED display device of claim 2, wherein: the TFT unit comprises a second transistor structure and a capacitor structure, wherein the second transistor structure comprises a second source electrode, a second drain electrode and a second grid electrode, and the second drain electrode is electrically connected with the first grid electrode through the conductive via hole; the capacitor structure is connected in parallel between the first grid electrode and the first drain electrode; the TFT backboard is provided with a grounding end, and the grounding end is conducted with the GND wiring.
5. The Micro-LED display device of claim 1, wherein: the dual layer wiring carrier substrate is opaque.
6. The Micro-LED display device of claim 1, wherein: the top surface and the side wall surface of the first transistor are coated with a shading packaging matrix.
7. The Micro-LED display device of claim 1, wherein: the surface except the upper surface of the Micro-LED chip, the upper surface of the double-layer wiring bearing substrate and the surface of the first transistor are integrally coated with a shading packaging matrix.
8. The Micro-LED display device of claim 1, wherein: the Micro-LED chip comprises a red light Micro-LED chip, a green light Micro-LED chip and a blue light Micro-LED chip, and the corresponding pixel units are a red light pixel unit, a green light pixel unit and a blue light pixel unit.
9. The Micro-LED display device of claim 7, wherein: the light-shielding packaging substrate is provided with a groove at the corresponding position of the blue light Micro-LED chip, and the fluorescent conversion layer is arranged in the groove.
10. The Micro-LED display device of claim 1, wherein: the light emitted by the Micro-LED chip is emitted downwards, the fluorescent conversion layer is arranged between the TFT units of the TFT backboard and vertically aligned with the Micro-LED chip, the double-layer wiring bearing substrate and the TFT backboard are made of light-transmitting materials, and a transparent adhesive layer is filled between the double-layer wiring bearing substrate and the TFT backboard.
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