CN112820752B - Micro light-emitting diode array substrate and transfer method of micro light-emitting diode - Google Patents
Micro light-emitting diode array substrate and transfer method of micro light-emitting diode Download PDFInfo
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- CN112820752B CN112820752B CN201911121038.3A CN201911121038A CN112820752B CN 112820752 B CN112820752 B CN 112820752B CN 201911121038 A CN201911121038 A CN 201911121038A CN 112820752 B CN112820752 B CN 112820752B
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- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 238000012546 transfer Methods 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- 239000012459 cleaning agent Substances 0.000 claims abstract description 32
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 22
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 11
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims description 27
- 239000012466 permeate Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 6
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 239000004416 thermosoftening plastic Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract
The invention provides a micro light-emitting diode array substrate and a transfer method of a micro light-emitting diode, wherein the micro light-emitting diode array substrate specifically comprises the following components: the LED comprises a substrate base plate and a plurality of micro LEDs arranged on the substrate base plate in an array manner; the adjacent micro light-emitting diodes are separated by the metal blocks, and the height of the metal blocks in the direction vertical to the substrate base plate is larger than that of the micro light-emitting diodes. Therefore, in the transfer process, a groove is left on the temporary bonding adhesive after the metal block is removed, the temporary bonding adhesive is removed by introducing a cleaning agent into the groove, so that the micro light-emitting diode is picked up by the polydimethylsiloxane transfer device at normal temperature, and the transfer yield of the micro light-emitting diode is improved.
Description
Technical Field
The present invention relates to micro light emitting diode transfer, and more particularly, to a micro light emitting diode array substrate and a micro light emitting diode transfer method.
Background
With the rapid development of the display industry and the continuous update and iteration of the display technology, the Micro Light-emitting diode (Micro-LED) display technology is expected to become the next generation mainstream display technology. Compared with the current OLED display technology, the Micro-LED display technology has higher brightness, better luminous efficiency and lower power consumption, and has obvious technical advantages.
micro-LEDs refer to micron-sized Light-emitting Diodes (LEDs). The batch transfer process is the most important loop in Micro-LED technology, and includes temporary bonding, laser lift-off, pick-up and bonding, wherein there are many transfer heads used in the pick-up process, and the transfer heads can be classified according to the working principle: electrostatic force transfer head, electromagnetic force transfer head, polydimethylsiloxane (PDMS) transfer head, vacuum transfer head. The PDMS transfer head structure is the simplest, the processing difficulty is low, and the PDMS transfer head structure is reported in the aspect of transferring photoelectric devices, and is regarded as a very promising process route. However, the PDMS material has problems of reduced adhesion and expansion at high temperature, which is not favorable for the transfer yield of Micro-LEDs, and therefore, it is necessary to develop a room temperature transfer method based on a PDMS transfer head.
Disclosure of Invention
The invention mainly solves the technical problem of providing an array substrate of a micro light-emitting diode and a transfer method of the micro light-emitting diode so as to improve the transfer yield of the micro light-emitting diode.
In order to solve the technical problems, the invention adopts a technical scheme that: provided is a micro light emitting diode array substrate, including: the LED light source comprises a substrate base plate and a plurality of micro LEDs arranged on the substrate base plate in an array manner; the adjacent micro light-emitting diodes are separated by metal blocks, and the height of the metal blocks in the direction vertical to the substrate base plate is larger than that of the micro light-emitting diodes.
Wherein the metal block is not in contact with the micro light emitting diode.
Wherein, the metal block is one or a combination of a square block shape, a cylindrical shape and a prismatic shape.
The metal blocks comprise row metal blocks and column metal blocks, wherein the row metal blocks are used for separating the micro light-emitting diodes in two adjacent rows, and the column metal blocks are used for separating the micro light-emitting diodes in two adjacent columns.
Wherein the metal block and the substrate base plate are integrally formed.
In order to solve the technical problems, the invention adopts a technical scheme that: a transfer method of a micro light emitting diode is provided, which comprises the following steps: temporarily bonding the micro light-emitting diode array substrate and the temporary bonding substrate; the micro light-emitting diode array substrate comprises a substrate and a plurality of micro light-emitting diodes arranged on the substrate in an array manner; the adjacent micro light-emitting diodes are separated by metal blocks, and the height of the metal blocks in the direction vertical to the substrate is greater than that of the micro light-emitting diodes; the temporary bonding substrate is coated with temporary bonding glue to temporarily bond the micro light-emitting diodes in the micro light-emitting diode array substrate; removing the substrate base plate and the metal block, wherein the micro light-emitting diode is adhered on the temporary bonding glue, and a corresponding groove is formed at the position of the temporary bonding glue corresponding to the metal block; attaching the transfer device to the micro light emitting diode attached to the temporary bonding substrate; and introducing a cleaning agent into the groove to remove the temporary bonding glue so as to peel off the temporary bonding substrate, so that the micro light-emitting diode is transferred to the transfer device.
Wherein the step of removing the substrate base plate and the metal block comprises: laser irradiation is performed to peel off the base substrate and the metal block.
Wherein, the step of introducing a cleaning agent into the groove to remove the temporary bonding glue so as to peel off the temporary bonding substrate comprises the following steps: and introducing a cleaning agent into the opening of the groove on at least one side of the temporary bonding substrate, and providing vacuum suction at the opening of the groove on the other side of the temporary bonding substrate so as to enable the cleaning agent to enter the groove by utilizing the vacuum suction, thereby removing the temporary bonding glue by utilizing the cleaning agent.
Wherein the depth of the groove in the direction perpendicular to the temporary bonding substrate is greater than the sum of the amount of deformation of the transfer device in the direction perpendicular to the transfer substrate and the height of the minimum passage required for the penetration of the cleaning agent.
Wherein, the transfer device is a polydimethylsiloxane transfer head.
The invention has the beneficial effects that: different from the prior art, the micro light-emitting diode array substrate comprises a substrate base plate and a plurality of micro light-emitting diodes which are arranged on the substrate base plate in an array manner; the adjacent micro light-emitting diodes are separated by the metal blocks, and the height of the metal blocks in the direction vertical to the substrate base plate is larger than that of the micro light-emitting diodes. The metal block is arranged on the micro light-emitting diode array substrate, the groove is formed in the transfer process through the metal block, bonding glue is effectively removed, the micro light-emitting diode is bonded with the polydimethylsiloxane transfer head, and the transfer yield of the micro light-emitting diode is improved.
Drawings
FIG. 1 is a schematic top view of a micro light emitting diode array substrate according to the present invention;
FIG. 2 is a front view of a schematic structure of a micro light emitting diode array substrate according to the present invention;
FIG. 3 is a schematic flow chart illustrating an embodiment of a micro LED transfer method according to the present invention;
fig. 4-7 are schematic process flow diagrams of a micro led transfer method according to the present invention.
Detailed Description
In a transfer process of a Polydimethylsiloxane (PDMS) transfer head for batch transfer of micro light emitting diodes, the PDMS transfer head is required to pick up the micro light emitting diodes from the surface of a temporary bonding adhesive, and common temporary bonding adhesive materials can be classified into a thermoplastic type, an ultraviolet photosensitive type, and the like according to material properties. For the thermoplastic temporary bonding substrate, the glue can be changed from a solid state to a liquid state through heating, so that the pickup of the PDMS transfer head to the micro light-emitting diode is realized, but the properties of the PDMS transfer head can be influenced when the general process temperature is over 150 ℃. One of the alternatives is that after the bonding between the PDMS transfer head and the temporary bonding substrate is completed, the PDMS transfer head is soaked in a cleaning solution of the temporary bonding adhesive, and after the temporary bonding adhesive is dissolved, the micro light emitting diode is left on the PDMS transfer head. But the bonding effect of PDMS and the temporary bonding substrate is good, the cleaning agent can not permeate, and the temporary bonding glue can not be dissolved after the process time lasts for 30 minutes.
Based on the above problem, this application provides a neotype little emitting diode array substrate, set up the metal block between adjacent little emitting diode, after will little emitting diode and the bonding of temporary bonding base plate, get rid of the metal block, the metal block can leave the recess on the temporary bonding glue on the temporary bonding base plate, let in the cleaner in the recess, get rid of temporary bonding glue, with little emitting diode and the separation of temporary bonding base plate, realize PDMS transfer head and pick up little emitting diode at normal atmospheric temperature, and then improve little emitting diode's transfer yield.
The micro light-emitting diode array substrate comprises a substrate base plate and a plurality of micro light-emitting diodes which are arranged on the substrate base plate in an array mode, wherein a metal block is arranged between every two adjacent micro light-emitting diodes and isolates the adjacent micro light-emitting diodes, and in order to ensure that the metal block cannot damage the micro light-emitting diodes, the metal block is not in contact with the micro light-emitting diodes. In order to ensure that the grooves of the metal blocks left on the temporary bonding glue can ensure that the cleaning agent is fully introduced, and then the temporary bonding glue is removed, the height of the metal blocks needs to be within a set range.
The present invention will be described in detail below with reference to the drawings and examples.
Fig. 1 is a top view of a schematic structural diagram of a micro light emitting diode array substrate according to the present invention. Comprises a substrate 11 and a plurality of micro light emitting diodes 12 arranged on the substrate 11 in an array. The adjacent micro-leds 12 are separated by metal blocks 13, and specifically, the metal blocks 13 include row metal blocks 131 and column metal blocks 132. The row metal blocks 131 are used to separate the micro light emitting diodes 12 of two adjacent rows, and the column metal blocks 132 are used to separate the micro light emitting diodes 12 of two adjacent columns.
Specifically, the substrate 11 is a growth substrate for manufacturing the micro light emitting diode 12, and for manufacturing the micro light emitting diode 12, the selection of the substrate material is very important, and which suitable material should be adopted as the substrate 11 needs to be selectedThe choice will be made according to the requirements of the device and the micro-led 12 device. Three materials are generally available on the market as substrates, including sapphire substrates (Al) 2 O 3 ) Silicon (Si), silicon carbide (SiC).
For clearly explaining the above structure, please further refer to fig. 2, fig. 2 is a front view of a structural schematic diagram of the micro light emitting diode array substrate of the present application. Specifically, the height of the metal block 13 in the direction perpendicular to the base substrate 11 is greater than the height of the micro light emitting diode 12. In one embodiment, the micro-leds 12 are not in contact with the metal block 13. In another embodiment, the metal block 13 may be in contact with the micro-leds 12 as long as it is ensured that the metal block 13 does not damage the micro-leds 12 by contact. The metal block 13 may be an iron block, a copper block, an aluminum block, or the like, and is not particularly limited.
In this embodiment, the metal block 13 is a square block, in other embodiments, the metal block 13 may be one or a combination of a cylindrical shape and a prismatic shape, and is not particularly limited, and of course, the shape of the metal block 13 may be any shape other than the above-described shapes, for example, an irregular shape, and the like, and is not particularly limited herein. .
When the micro light-emitting diode 12 provided by the application is transferred, the micro light-emitting diode array substrate is bonded with the temporary bonding substrate through the temporary bonding glue, and the substrate 11 is removed by using a laser irradiation mode. The metal block 13 is removed in the process of peeling the substrate base plate 11, and a groove is formed on the temporary bonding glue after the metal block 13 is removed. Specifically, after the micro light emitting diodes 12 are transferred to the temporary bonding substrate, the substrate 11 and the metal block 13 are removed. In the specific application of the present invention, after the metal block 13 is removed, a groove is left, and a cleaning agent is introduced into the groove, so that the transfer device picks up the micro light emitting diode 12, and in order to ensure that the cleaning agent can enter the groove, the depth of the groove needs to be limited. In one embodiment, the depth of the groove is equal to the height of the metal block 13, and for satisfying the requirement, the height of the metal block 13 is larger than the sum of the deformation amount of the transfer device in the vertical direction and the height of the channel required by the cleaning agent to permeate.
In the embodiment, the metal block 13 is disposed between the adjacent micro light emitting diodes, when the transfer is performed, the metal block 13 is removed, a cleaning agent is dropped into the groove formed by the metal block 13, and the micro light emitting diodes 12 are further peeled off from the temporary bonding substrate, so that the transfer device can pick up the micro light emitting diodes 12 at a normal temperature, thereby improving the transfer yield of the micro light emitting diodes 12.
Fig. 3 is a schematic flow chart of a transfer method of a micro light emitting diode according to the present invention. The method comprises the following steps:
step S31: and temporarily bonding the micro light-emitting diode array substrate and the temporary bonding substrate, wherein temporary bonding glue is coated on the temporary bonding substrate to temporarily bond the micro light-emitting diodes in the micro light-emitting diode array substrate.
Specifically, referring to fig. 4, the micro light emitting diode array substrate is bonded to the temporary bonding substrate 14, and the temporary bonding adhesive 15 is coated on the temporary bonding substrate 14.
The micro light-emitting diode array substrate comprises a substrate 11 and a plurality of micro light-emitting diodes 12 which are arranged on the substrate 11 in an array manner; the adjacent micro light emitting diodes 12 are separated by metal blocks 13, and the height of the metal blocks 13 in the direction perpendicular to the substrate base plate 11 is greater than that of the micro light emitting diodes 12.
When the micro light emitting diode array substrate is bonded to the temporary bonding substrate 14, the micro light emitting diodes 12 face the temporary bonding substrate 14, and the micro light emitting diodes 12 and the metal block 13 are engaged with the temporary bonding paste 15.
Specifically, when the temporary bonding paste 15 is coated on the temporary bonding substrate 14, the temporary bonding paste 15 is made to be flush with a surface of the temporary bonding substrate 14, so as to facilitate bonding of the micro light emitting diode array substrate.
Step S32: and removing the substrate base plate and the metal block, wherein the micro light-emitting diode is adhered on the temporary bonding glue, and a corresponding groove is formed at the position of the temporary bonding glue corresponding to the metal block.
Specifically, referring to fig. 5, the substrate 11 and the metal block 13 are removed, so that the micro-leds 12 are left on the temporary bonding glue 15. After removing the metal block 13, the metal block 13 may leave a groove on the temporary bonding paste 15.
In one embodiment, the laser irradiates the substrate base 11 and the metal block 13 to peel off the substrate base 11 and the metal block 13. The substrate 11 and the metal block 13 may be an integral component or two separate components, which is not limited herein. The base substrate 11 and the metal block 13 are integrated, and the base substrate 11 and the metal block 13 can be peeled from the temporary bonding paste 15 by irradiating the base substrate 11 with laser light.
Step S33: and attaching the transfer device to the micro light-emitting diode attached to the temporary bonding substrate.
With reference to fig. 5, after the substrate 11 and the metal block 13 are removed, the micro light emitting diodes 12 are adhered to the temporary bonding glue 15, and at this time, the transfer device 16 is placed on a side of the micro light emitting diodes 12 far away from the temporary bonding substrate 14, so that the transfer device 16 is attached to the micro light emitting diodes 12.
Step S34: and introducing a cleaning agent into the groove to remove the temporary bonding glue so as to peel off the temporary bonding substrate, so that the micro light-emitting diode is transferred to a transfer device.
Specifically, a cleaning agent is introduced into an opening of a groove on at least one side of the temporary bonding substrate 14, and a vacuum suction force is provided at an opening of a groove on the other side of the temporary bonding substrate 14, so that the cleaning agent is sucked into the groove by the vacuum suction force, and the temporary bonding paste 15 is removed by the cleaning agent.
Specifically, referring to fig. 6, in one embodiment, in order to ensure that the temporary bonding paste 15 is completely removed, a vacuum suction head 17 is provided at an opening of the groove into which the cleaning agent is not introduced, so as to provide vacuum suction through the vacuum suction head 17. For example, in the embodiment shown in fig. 6, a cleaning agent is introduced into one side of the temporary bonding substrate 14, and a vacuum chuck 17 is provided on the other side, and the vacuum chuck 17 provides suction force to flow the cleaning agent in the groove when the cleaning agent enters the groove. In another embodiment, as shown in fig. 7, a cleaning agent may be introduced into adjacent two sides of the temporary bonding substrate 14, and a vacuum nozzle 17 may be provided to the other adjacent two sides, so that the cleaning agent flows in the groove by providing suction force by the vacuum nozzle 17. To completely remove the temporary bonding paste 15 and further separate the temporary bonding substrate 14 from the micro-leds 12, so that the transfer device 16 picks up the micro-leds 12.
In one embodiment, to ensure that the cleaning agent can flow into the grooves, the depth of the grooves in the direction perpendicular to the temporary bonding substrate 14 is greater than the sum of the amount of deformation of the transfer device 16 in the direction perpendicular to the temporary bonding substrate 14 and the height of the minimum passage required for the cleaning agent to penetrate. Thereby allowing the cleaning agent to sufficiently flow into the grooves and further removing the temporary bonding paste 15.
In the embodiments provided herein, the transfer device 16 is a polydimethylsiloxane transfer head. According to the micro light-emitting diode array substrate and the micro light-emitting diode transfer method, the transfer device can pick up the micro light-emitting diodes at normal temperature, the suction force of the transfer device (polydimethylsiloxane transfer head) is not influenced, and the transfer yield of the micro light-emitting diodes is improved.
In this embodiment, only a part of the related structures and functions of the micro light emitting diode array substrate are described, and other structures and functions are the same as those of the micro light emitting diode array substrate in the prior art, which is not described herein again.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A micro light emitting diode array substrate, comprising:
the LED light source comprises a substrate base plate and a plurality of micro LEDs arranged on the substrate base plate in an array manner;
the adjacent micro light-emitting diodes are separated by metal blocks, and the height of the metal blocks in the direction vertical to the substrate base plate is greater than that of the micro light-emitting diodes;
wherein the substrate base plate and the metal block are used for being removed in the transfer process of the micro light-emitting diode.
2. The micro light emitting diode array substrate of claim 1,
the metal block is not in contact with the micro light-emitting diode.
3. The micro led array substrate of claim 1, wherein the metal block is one or a combination of a square block, a cylinder, and a prism.
4. The micro light emitting diode array substrate of claim 1, wherein the metal blocks comprise row metal blocks and column metal blocks, wherein the row metal blocks are used for separating the micro light emitting diodes of two adjacent rows, and the column metal blocks are used for separating the micro light emitting diodes of two adjacent columns.
5. The micro light emitting diode array substrate of claim 1, wherein the metal block is integrally formed with the substrate base plate.
6. A method for transferring micro light emitting diodes, comprising:
temporarily bonding the micro light-emitting diode array substrate and the temporary bonding substrate; the micro light-emitting diode array substrate comprises a substrate and a plurality of micro light-emitting diodes which are arranged on the substrate in an array manner; the adjacent micro light-emitting diodes are separated by metal blocks, and the height of the metal blocks in the direction vertical to the substrate base plate is greater than that of the micro light-emitting diodes; the temporary bonding substrate is coated with temporary bonding glue to temporarily bond the micro light-emitting diodes in the micro light-emitting diode array substrate;
removing the substrate base plate and the metal block, wherein the micro light-emitting diode is adhered to the temporary bonding glue, and a corresponding groove is formed in the position, corresponding to the metal block, of the temporary bonding glue;
attaching a transfer device to the micro light emitting diode attached to the temporary bonding substrate;
and introducing a cleaning agent into the groove to remove the temporary bonding glue so as to peel off the temporary bonding substrate, so as to transfer the micro light-emitting diode to the transfer device.
7. The transfer method according to claim 6, wherein the step of removing the substrate base plate and the metal block comprises:
laser irradiation is performed to peel off the base substrate and the metal block.
8. The transfer method according to claim 6, wherein the step of introducing a cleaning agent into the groove to remove the temporary bonding glue so as to peel off the temporary bonding substrate comprises the steps of:
and introducing a cleaning agent into the opening of the groove on at least one side of the temporary bonding substrate, and providing vacuum suction at the opening of the groove on the other side of the temporary bonding substrate so as to enable the cleaning agent to enter the groove by utilizing the vacuum suction, thereby removing the temporary bonding glue by utilizing the cleaning agent.
9. The transfer method according to claim 6, wherein a depth of the groove in a direction perpendicular to the temporary bonded substrate is larger than a sum of a deformation amount of the transfer device in the direction perpendicular to the temporary bonded substrate and a height of a minimum passage required for the cleaning agent to permeate.
10. The transfer method according to claim 6, wherein the transfer device is a polydimethylsiloxane transfer head.
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| CN201911121038.3A CN112820752B (en) | 2019-11-15 | 2019-11-15 | Micro light-emitting diode array substrate and transfer method of micro light-emitting diode |
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| WO2022257078A1 (en) * | 2021-06-10 | 2022-12-15 | 重庆康佳光电技术研究院有限公司 | Bonding measurement device and method, and thickness uniformity measurement device and method |
| CN115469472B (en) * | 2021-06-10 | 2024-09-17 | 重庆康佳光电技术研究院有限公司 | Bonding detection device and method |
| CN114755852B (en) * | 2022-04-21 | 2024-03-29 | 南京京东方显示技术有限公司 | Backboard, backboard processing method, backlight module and display device |
| CN117410395B (en) * | 2023-10-07 | 2024-08-27 | 海目星激光科技集团股份有限公司 | Micro LED transfer method |
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| CN109496351A (en) * | 2017-06-09 | 2019-03-19 | 歌尔股份有限公司 | Micro- light emitting diode matrix transfer method, manufacturing method and display device |
| CN108962789A (en) * | 2018-06-25 | 2018-12-07 | 开发晶照明（厦门）有限公司 | Micro element transfer method and micro element transfer equipment |
| CN108899337A (en) * | 2018-07-05 | 2018-11-27 | 京东方科技集团股份有限公司 | Micro- light emitting diode base plate and preparation method thereof, display panel |
| CN109709722A (en) * | 2019-03-12 | 2019-05-03 | 合肥京东方光电科技有限公司 | Direct-light-type backlight and preparation method, backlight module and display device |
| CN110416246A (en) * | 2019-07-31 | 2019-11-05 | 云谷（固安）科技有限公司 | A kind of LED chip array and display panel |
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