CN109709722A - Direct-light-type backlight and preparation method, backlight module and display device - Google Patents
Direct-light-type backlight and preparation method, backlight module and display device Download PDFInfo
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- CN109709722A CN109709722A CN201910183390.3A CN201910183390A CN109709722A CN 109709722 A CN109709722 A CN 109709722A CN 201910183390 A CN201910183390 A CN 201910183390A CN 109709722 A CN109709722 A CN 109709722A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Planar Illumination Modules (AREA)
Abstract
The invention discloses direct-light-type backlight and preparation methods, backlight module and display device.The direct-light-type backlight includes: substrate；Multiple micro- light emitting diodes, the multiple micro- light emitting diode are located on the substrate and are arranged in array；And catoptric arrangement, gap location of the catoptric arrangement between multiple micro- light emitting diodes, the catoptric arrangement includes reflective metal layer, and the dielectric layer of the sealing reflective metal layer.The direct-light-type backlight has many advantages, such as that reflectivity is high, luminous efficiency is high, low in energy consumption, stability is at least one of good.
Description
Technical field
The present invention relates to field of display technology, and in particular, to direct-light-type backlight and preparation method, backlight module and
Display device.
Background technique
Backlight module in liquid crystal display device is the important component of display device.Light in current backlight module
Source is mainly made of light emitting diode (LED) array, is divided into straight-down negative and side entering type two types.Wherein, MiniLED
Area source has smaller chip size, and the spacing between two neighboring chip is also smaller, shows product as the next generation, passes through
To area source subregion, it can be realized HDR and show.Compared with side-edge type backlight, MiniLED backlight by collocation diffusion barrier,
The optical textures such as QD film, composite prism, it is possible to provide the area source of uniform in light emission.However currently based on the backlight of MiniLED
Reflectivity is lower, and only 80% or so, cause miniLED area source light efficiency relatively low, power consumption is higher.Although by being coated with metal foil
Film (such as Ag) is able to ascend lamp plate bottom reflection rate, but the higher metallic film stability of Ag isoreflectance is poor, is easy by water
Oxygen destroys, and therefore, it is difficult to maintain higher reflectivity in actual use.
Therefore, current direct-light-type backlight and preparation method, backlight module and display device still have much room for improvement.
Summary of the invention
The present invention is directed at least at least one of solutions or the alleviation above problem to a certain degree.
In one aspect of the invention, the invention proposes a kind of direct-light-type backlights for display device.Under this is straight
Formula backlight includes: substrate；Multiple micro- light emitting diodes, the multiple micro- light emitting diode are located on the substrate and in arrays
Arrangement；And catoptric arrangement, gap location of the catoptric arrangement between multiple micro- light emitting diodes, the reflection knot
Structure includes reflective metal layer, and the dielectric layer of the sealing reflective metal layer.The direct-light-type backlight has reflectivity height, hair
At least one of the advantages that light efficiency is high, low in energy consumption, stability is good.
According to an embodiment of the invention, reflective metal layer is formed by Ag, the reflective metal layer with a thickness of 150-
200nm.It can get the higher reflective metal layer of reflectivity as a result,.
According to an embodiment of the invention, the dielectric layer includes at least: the silica sub-layer being stacked and three oxygen
Change two aluminium sub-layers, the silica sub-layer covers the reflective metal layer far from the base close to the reflective metal layer
The surface of plate side and side wall, the silica sub-layer with a thickness of 180-210nm；The aluminum oxide sub-layer covering
Surface and side wall of the silica sub-layer far from the reflective metal layer side, the thickness of the aluminum oxide sub-layer
For 40-70nm.It is above-mentioned to combine the dielectric layer constituted by being stacked sub-layer the reflectivity of light can be improved, and then can further mention
The light extraction efficiency of the high backlight.
According to an embodiment of the invention, the backlight further comprises: sacrificial metal block, the sacrificial metal block are located at institute
The side-walls of reflective metals are stated, the dielectric layer covers the sacrificial metal block.It can further improve reflective metal layer as a result,
Durability degree, alleviate as water oxygen corrosion and caused by reflectivity decline.
In another aspect of the invention, the invention proposes a kind of backlight modules.The backlight module includes noted earlier
Direct-light-type backlight.As a result, the backlight module have previously described direct-light-type backlight possessed by whole feature and
Advantage, details are not described herein.Generally speaking, the backlight module is higher with light extraction efficiency, stability is preferable, power consumption is more low excellent
At least one of point.
In an additional aspect of the present invention, the direct-light-type backlight for display device is prepared the invention proposes a kind of
Method.According to an embodiment of the invention, the catoptric arrangement includes reflection this method comprises: forming catoptric arrangement on substrate
Metal layer, and the dielectric layer of the reflective metal layer is coated and seals, the catoptric arrangement has hollowed out area；And institute
It states and micro- light emitting diode is set at hollowed out area.This method can be easy acquisition direct-light-type backlight, the backlight of preparation has
At least one of the advantages that light extraction efficiency is higher, stability is preferable, power consumption is lower.
According to an embodiment of the invention, forming the catoptric arrangement includes: deposition of reflective metal, and benefit on the substrate
The reflective metals corresponding with the hollowed out area are removed with patterning processes, to form the reflective metal layer；In the base
With the side deposits dielectric materials of the reflective metal layer on plate, and it is corresponding with the hollowed out area by patterning processes removal
The dielectric material, to obtain the dielectric layer.Acquisition catoptric arrangement that as a result, can be easy.
According to an embodiment of the invention, forming the catoptric arrangement includes: deposited sacrificial metal, and benefit on the substrate
The sacrificial metal block of the annular around the hollowed out area is formed with patterning processes；The sacrificial metal is formed in the substrate
The side deposition of reflective metal of block, and the reflective metals corresponding with the hollowed out area are removed using patterning processes, with shape
At the reflective metal layer；On the substrate with the side deposits dielectric materials of the reflective metal layer, and pass through composition
Technique removes the dielectric material corresponding with the hollowed out area, to obtain the dielectric layer.It can further improve system as a result,
The stability and durability degree of standby catoptric arrangement.
According to an embodiment of the invention, being formed after the reflective metal layer, formed before the dielectric layer, is further wrapped
It includes: the substrate is made annealing treatment.The adhesive force between metal and substrate can be improved as a result, and can further mention
Rise the flatness of metal surface.
In an additional aspect of the present invention, the invention proposes a kind of display devices.According to an embodiment of the invention, described
The backlight module of display device includes mentioned-above direct-light-type backlight.The display device has previously described straight as a result,
Whole feature and advantage possessed by backlight, details are not described herein.Generally speaking, which has light efficiency
At least one of the advantages that rate is higher, stability is preferable, power consumption is lower.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 shows the structural schematic diagram of direct-light-type backlight according to an embodiment of the invention；
Fig. 2 shows the structural schematic diagram of direct-light-type backlight in accordance with another embodiment of the present invention；
Fig. 3 shows the top view of direct-light-type backlight according to an embodiment of the invention；
Fig. 4 shows the flow diagram of the method according to an embodiment of the invention for preparing direct-light-type backlight；
Fig. 5 shows the process signal of the Part Methods according to an embodiment of the invention for preparing direct-light-type backlight
Figure；
Fig. 6 shows the flow diagram of the method according to an embodiment of the invention for preparing direct-light-type backlight；With
And
Fig. 7 shows the process signal of the Part Methods according to an embodiment of the invention for preparing direct-light-type backlight
Figure.
Description of symbols:
100: substrate；200: micro- light emitting diode；300: catoptric arrangement；310: reflective metal layer；310 ': reflective metals；
320: dielectric layer；10: silica sub-layer；10 ': silicon dioxide layer；20: aluminum oxide sub-layer；20 ': aluminum oxide layer；
30: sacrificial metal block；30 ': sacrificial metal；50: exposure mask.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or the element including same or like function.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In one aspect of the invention, the invention proposes a kind of direct-light-type backlights for display device.With reference to figure
1, which includes: substrate 100, and the multiple micro- light emitting diodes 200, Duo Gewei of setting on the substrate 100
Light emitting diode 200 is arranged in array.Gap location between multiple micro- light emitting diodes 200 has catoptric arrangement 300.Reflection
Structure 300 includes reflective metal layer 310, and the dielectric layer 320 of sealing reflective metal layer 310.The direct-light-type backlight has
At least one of the advantages that reflectivity is high, luminous efficiency is high, low in energy consumption, stability is good.
In order to facilitate understanding, reflectivity height, luminous efficiency height, power consumption can be realized to the direct-light-type backlight first below
Low, the advantages that stability is good principle is briefly described:
Compared with general light emitting diode, the size of micro- light emitting diode 200 on substrate 100 of the present invention is minimum, only
In 10-50 microns.Correspondingly, the distance between micro- light emitting diode matrix is also smaller.Therefore, and using conventional luminous two
The side-edge type backlight of pole pipe is compared, it is difficult to the light extraction efficiency of backlight is improved using conventional reflective coating.Although can lead to
It crosses the technologies such as silk-screen printing and forms the light extraction efficiency that photosensitive-ink promotes backlight, but the backlight of the type also only has
80% or so reflectivity, and precision does not reach requirement, and causes the region chip pad (region with micro- light emitting diode 200)
It is covered by photosensitive-ink.Reflective metals although reflectivity with higher, but the side of reflectivity is only improved by deposited metal layer
Formula, and it is difficult to ensure the durability degree of metal layer: the metal (such as Ag) of reflection efficiency with higher is easy actually using
The reaction such as oxidation is occurred by the water oxygen corrosion in environment in journey, therefore, it is difficult to keep higher reflectivity for a long time.According to this
The backlight of inventive embodiments can protect reflective metal layer, mention by way of sealing medium layer is arranged on reflective metal layer
The durability degree of high reflection structure.Also, catoptric arrangement 300 has the structure of stacking, can pass through deposition materials more conveniently
It is formed with patterning processes, therefore is suitable for the backlight of small, the closely spaced micro- light emitting diode matrix of size.Thus, it is possible to
While guaranteeing catoptric arrangement reflectivity with higher, the durability degree of catoptric arrangement is improved.
Below according to specific embodiments of the present invention, each structure of the direct-light-type backlight is described in detail:
According to an embodiment of the invention, reflective metal layer 310 can be and be formed by Ag.Metal Ag reflection with higher
Rate, can be by the formation film layer structure of modes simplicity such as being deposited.According to an embodiment of the invention, reflective metal layer 310
Thickness can be 150-200nm.For example, can be 160nm, 170nm, 180nm, 190nm etc..When the thickness of reflective metal layer exists
When in above range, preferable reflectivity can be obtained, is conducive to the light efficiency out for further increasing the direct-light-type backlight as a result,
Rate.
According to an embodiment of the invention, dielectric layer 320 covers reflective metal layer 310, and reflective metal layer 310 is sealed in
Inside dielectric layer 320.In other words, dielectric layer 320 covers surface of the reflective metal layer 310 far from 100 side of substrate, and anti-
Penetrate the side wall of metal layer 310.Reflective metal layer 310 is sealed using dielectric layer 320 as a result, the water in isolated environment
Corrosion of the oxygen to metallic reflector 310, so as to improve the durability degree of catoptric arrangement 300.The material of dielectric layer 320 is not by spy
It does not limit, for example, can be the transparent inorganic material with certain transmitance.As a result, on the one hand can using inorganic film every
On the other hand water oxygen in exhausted environment will not influence the light of the reflection of metallic reflector 310 due to the covering of dielectric layer 320
Injection.Also, the dielectric layer 320 that inorganic material is formed can also prevent reflective metal layer 310 and micro- light emitting diode 200
The insulation, it can be achieved that between reflective metal layer 310 and micro- light emitting diode 200 or connection cabling is contacted between chip cabling.
Some specific embodiments according to the present invention, dielectric layer 320 may include multiple stepped constructions.For example, with reference to Fig. 2,
Dielectric layer 320 can include at least the silica sub-layer 10 and aluminum oxide sub-layer 20 being stacked.Wherein, silica
Sub-layer 10 is arranged close to reflective metal layer.According to an embodiment of the invention, silica sub-layer 10 covers reflective metal layer 310 far
The side wall on surface and reflective metal layer 310 from the substrate side, to be sealed to reflective metal layer 310.Three oxidations
Two aluminium sub-layers 20 cover silica sub-layer 10, i.e. aluminum oxide sub-layer 20 covers silica sub-layer 10 far from reflective metals
The layer surface of 310 sides and the side wall of silica sub-layer 10, to be sealed to silica sub-layer.Thus, it can be achieved that
Multilayer encapsulation is carried out to reflective metal layer 310, so as to further promote the sealing performance of the catoptric arrangement 300 and durable
Degree.On the other hand, promotion can also be played by adjusting the silica of stacking and the thickness of aluminum oxide, above structure
The effect of dielectric layer transmissivity, to be conducive to further increase the light extraction efficiency of the backlight.
Some specific embodiments according to the present invention, the thickness of aluminum oxide sub-layer 20 can be 40-70nm, titanium dioxide
The thickness of silicon sub-layer 10 can be 180-210nm.The silica sub-layer 10 of thickness within the above range and aluminum oxide sub-layer
After 20 stackings, the combination film layer structure for being able to ascend blu-ray reflection rate may make up, to be conducive to promote going out for the backlight
Light efficiency.
According to an embodiment of the invention, making it in use may be used to further increase the durability degree of the backlight
Initial high reflectance is kept in a long time, which can further comprise sacrificial metal block.Specifically, with reference to figure
2, sacrificial metal block 30 is located at the side-walls of reflective metal layer 310, and dielectric layer covers sacrificial metal block 30.Sacrificial metal block 30
Concrete composition and shape, quantity be not particularly limited, as long as the chemical property of sacrificial metal block 30 is compared with reflective metal layer 310
It is more active, and be in contact with reflective metal layer 310.It can further improve the durability degree of reflective metal layer as a result, alleviate
Reflectivity caused by as water oxygen corrosion declines.For example, according to some embodiments of the present invention, sacrificial metal block 30 can be
It is made of the thickness Zn similar or even equal with the thickness of reflective metal layer 310.
As previously mentioned, gap location of the catoptric arrangement 300 between multiple micro- light emitting diodes 200, and it is multiple micro- luminous
Diode 200 is arranged in array on the substrate 100.Therefore, catoptric arrangement 300 can be the vacancy section with array arrangement
The film layer structure in domain.With reference to Fig. 3, catoptric arrangement 300, which can cover, to be needed to be arranged on substrate 100 other than micro- light emitting diode 200
Thus whole region can preferably reflect the light that micro- light emitting diode 200 issues.The area of the hollowed out area of catoptric arrangement 300
The area of micro- light emitting diode 200 can be greater than, certain surplus is reserved in the setting that can thus be micro- light emitting diode 200.When this
When having sacrificial metal block 30 in catoptric arrangement 300, sacrificial metal block 30 can be to surround hollowed out area shown in Fig. 3
Ring structure (not shown).Preferably reflective metal layer can be protected as a result,.
According to an embodiment of the invention, with above structure direct-light-type backlight can reflectivity with higher, reflection
Rate can achieve 96% or more.Also, due to the isostructural setting of dielectric layer, the backlight can stable for extended periods of time, alleviating should
Backlight in actual use reflectivity rapid decrease the problem of.
In another aspect of the invention, the invention proposes a kind of backlight modules.According to an embodiment of the invention, the back
Optical mode group includes mentioned-above direct-light-type backlight.The backlight module has previously described direct-light-type backlight institute as a result,
The whole features and advantage having, details are not described herein.Generally speaking, which has light extraction efficiency higher, stable
At least one of the advantages that property is preferable, power consumption is lower.
According to a particular embodiment of the invention, which removes except previously described direct-light-type backlight, may be used also
With structures such as optics modules.For example, the backlight module can further comprise diffusion barrier, quantum dot film, composite prism etc.
Structure.
In an additional aspect of the present invention, the direct-light-type backlight for display device is prepared the invention proposes a kind of
Method.According to an embodiment of the invention, the direct-light-type backlight of this method preparation can be previously described direct-light-type backlight.
Specifically, with reference to Fig. 4, this method comprises:
S100: forming catoptric arrangement on substrate, and the catoptric arrangement has hollowed out area
According to an embodiment of the invention, in this step, catoptric arrangement is formed on substrate first.The catoptric arrangement can be with
With feature identical with previously described catoptric arrangement, details are not described herein.Specifically, the catoptric arrangement may include reflection gold
Belong to layer, and the dielectric layer of sealing reflective metal layer.Also, there is the hollow out for accommodating micro- light emitting diode in catoptric arrangement
Region.Since the micro- light emitting diode being arranged in subsequent step is array arrangement, the hollow out of catoptric arrangement on substrate
Region can also be arranged in array.
According to an embodiment of the invention, forming catoptric arrangement can comprise the following steps that with reference to Fig. 5
S110: deposition of reflective metal on the substrate removes reflective metals corresponding with the hollowed out area to be formed
Reflective metal layer
According to an embodiment of the invention, in this step can on substrate deposition of reflective metal 310 ', followed by work figure
Technique removes reflective metals corresponding with hollowed out area, forms reflective metal layer.Specifically, with reference to (a) in Fig. 6 and (b),
Can be by the way that exposure mask 50A be arranged in reflective metals 310 ', etching removes the reflective metal layer other than the overlay area exposure mask 50A
310'.Exposure mask 50A can be through coating photoresist and expose formation.It is formed after reflective metal layer 310, removes exposure mask
50A can carry out subsequent step.
S120: deposits dielectric materials on the substrate remove dielectric material corresponding with hollowed out area, to obtain medium
Layer
According to an embodiment of the invention, in this step, with the side deposition medium material of reflective metal layer on substrate
Material, and dielectric material corresponding with hollowed out area is removed by patterning processes, to obtain the dielectric layer of covering reflective metal layer.By
This, acquisition catoptric arrangement that can be easy.The dielectric layer obtained in the step can have and previously described direct-light-type backlight
The identical structure of dielectric layer and feature, details are not described herein.It will be appreciated to those of skill in the art that dielectric layer needs cover
Reflective metal layer is covered and seals, therefore, the used exposure mask when forming dielectric layer needs to enable remaining dielectric layer material after etching
Material can cover surface and the side wall of reflective metal layer.
Some specific embodiments according to the present invention, dielectric layer may include the sublayer structure of multiple stackings.Such as, it may include
Silica sub-layer and aluminum oxide sub-layer.About the detailed construction of silica sub-layer and aluminum oxide sub-layer, before
Detailed description has been carried out, details are not described herein.With reference to (b) in Fig. 6~(e), when dielectric layer includes silica Asia
Layer and when aluminum oxide sub-layer, the step of forming dielectric layer, may particularly include: firstly, being formed with reflective metal layer 310
Whole face deposits SiO on substrate 1002Formed silicon dioxide layer 10 ', then can with hollowed out area corresponding section (i.e. subsequent step
The position of the middle micro- light emitting diode of setting) gluing exposure, form exposure mask 50B.By the SiO other than the overlay area exposure mask 50B2Etching
Fall, the processing that then carries out removing photoresist completes the production of silica sub-layer 10 to remove exposure mask 50B.Similarly, silica is formed
After sub-layer 10, flood depositing Al on the substrate 100 first2O3Form Al2O3Layer 20 ' recycles patterning processes, forms three oxygen
Change two aluminium sub-layers 20.The width of the silica sub-layer 10 of formation after etching is greater than reflective metal layer 310, three oxygen after etching
The width for changing two aluminium sub-layers 20 is greater than silica sub-layer 10, and the increase of two layers of etching width is realized to reflective metal layer 310
Isolation, the infiltration of water oxygen can be prevented to a certain extent.
S200: multiple micro- light emitting diodes are set at the hollowed out area
According to an embodiment of the invention, in this step, micro- hair is arranged in the hollowed out area of the catoptric arrangement formed in front
Optical diode, to obtain direct-light-type backlight.The structure of the backlight of formation can be as shown by (f) in Fig. 6.It is formed anti-
It penetrates after structure and carries out the setting of micro- light emitting diode again, can prevent from being formed operation during catoptric arrangement and shine two to micro-
The performance of pole pipe impacts.
According to an embodiment of the invention, the concrete operations that micro- light emitting diode 200 is arranged in the step are not particularly limited,
Those skilled in the art can select according to actual needs.For example, multiple micro- light emitting diodes 200 can be and be transferred in batches
On substrate 100.Transferable one micro- light emitting diode 200 is shifted every time, can also shift multiple micro- light emitting diodes.
According to an embodiment of the invention, in order to further increase the durability degree for the backlight for utilizing this method preparation, the party
It can also include the steps that forming sacrificial metal in method.Principle, structure, the chemical composition to play a role about sacrificial metal, it is preceding
Detailed description has been carried out in face, no longer chases after herein.The operation for forming sacrificial metal can be before forming reflective metal layer
It carries out.Specifically, with reference to Fig. 7 sacrificial metal 30 ' can be formed on the substrate 100, for example, can first by modes such as vapor depositions
Zn is deposited to form sacrificial metal 30 '.Then, the exposure mask 50C that setting photoresist is formed, and etch the removal exposure mask 50C area of coverage
Sacrificial metal 30 ' other than domain obtains sacrificial metal block 30.Then, it without removing exposure mask 50C, directly can be deposited to form reflection
Metal 310 ', thickness of coating is identical as the thickness of sacrificial metal block 30, and the structure of formation can be as shown in (b) in Fig. 7.Then,
The sacrificial metal above exposure mask 50C and exposure mask 50C can be removed by modes such as plasma ashings.It subsequently forms for making
The exposure mask 50A of standby reflective metal layer removes part reflective metals 310 ' by patterning processes, forms reflective metals 310.Removal is used
After preparing the exposure mask 50A of reflective metal layer, the preparation of subsequent dielectric layer can be continued.
According to an embodiment of the invention, in order to improve metal material (reflective metal layer and sacrificial metal block) and substrate
Adhesive force between 100 can further include the operation of annealing before the preparation for carrying out dielectric layer.Inventor
It was found that annealing can not only promote the binding force of reflective metal layer and substrate for reflective metal layer, also help
Improve the surface smoothness of reflective metal layer.It can further improve the reflectivity of reflective metal layer as a result,.Specifically, at annealing
Reason can be the N at 200 DEG C2It is carried out under atmosphere.It will be appreciated to those of skill in the art that being sacrificed when the backlight has
When metal block, annealing can be to sacrificial metal block and reflective metal layer progress.
In an additional aspect of the present invention, the invention proposes a kind of display devices.According to an embodiment of the invention, described
The backlight module of display device includes mentioned-above direct-light-type backlight.The display device has previously described straight as a result,
Whole feature and advantage possessed by backlight, details are not described herein.Generally speaking, which has light efficiency
At least one of the advantages that rate is higher, stability is preferable, power consumption is lower.
In the description of the present invention, the orientation or positional relationship of the instructions such as term " on ", "lower" is based on the figure
Orientation or positional relationship is merely for convenience of the description present invention rather than requires the present invention that must be constructed and be grasped with specific orientation
Make, therefore is not considered as limiting the invention.
In the description of this specification, the description of reference term " one embodiment ", " another embodiment " etc. means to tie
The embodiment particular features, structures, materials, or characteristics described are closed to be included at least one embodiment of the present invention.At this
In specification, the schematic representation of the above terms does not necessarily have to refer to the same embodiment or example.Moreover, the tool of description
Body characteristics, structure, material or feature may be combined in any suitable manner in any one or more of the embodiments or examples.This
Outside, without conflicting with each other, those skilled in the art by different embodiments described in this specification or can show
The feature of example and different embodiments or examples is combined.In addition, it is necessary to illustrate, in this specification, term
" first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicate meaning
The quantity of the technical characteristic shown.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of direct-light-type backlight for display device characterized by comprising
Substrate；
Multiple micro- light emitting diodes, the multiple micro- light emitting diode are located on the substrate and are arranged in array；And
Catoptric arrangement, gap location of the catoptric arrangement between multiple micro- light emitting diodes, the catoptric arrangement packet
Include reflective metal layer, and the dielectric layer of the sealing reflective metal layer.
2. direct-light-type backlight according to claim 1, which is characterized in that reflective metal layer is formed by Ag, described
Reflective metal layer with a thickness of 150-200nm.
3. direct-light-type backlight according to claim 1, which is characterized in that the dielectric layer includes at least: being stacked
Silica sub-layer and aluminum oxide sub-layer,
The silica sub-layer covers the reflective metal layer far from the substrate side close to the reflective metal layer
Surface and side wall, the silica sub-layer with a thickness of 180-210nm；
The aluminum oxide sub-layer covers surface and side of the silica sub-layer far from the reflective metal layer side
Wall, the aluminum oxide sub-layer with a thickness of 40-70nm.
4. direct-light-type backlight according to claim 1-3, which is characterized in that further comprise:
Sacrificial metal block, the sacrificial metal block are located at the side-walls of the reflective metal layer, and the dielectric layer covering is described sacrificial
Domestic animal metal block.
5. a kind of backlight module, which is characterized in that including the described in any item direct-light-type backlights of claim 1-4.
6. a kind of method for preparing the direct-light-type backlight for display device characterized by comprising
Catoptric arrangement is formed on substrate, the catoptric arrangement includes reflective metal layer, and coats and seal the reflection gold
Belong to the dielectric layer of layer, the catoptric arrangement has hollowed out area；And
Micro- light emitting diode is set at the hollowed out area.
7. according to the method described in claim 6, it is characterized in that, forming the catoptric arrangement and including:
Deposition of reflective metal on the substrate, and the reflection gold corresponding with the hollowed out area is removed using patterning processes
Belong to, to form the reflective metal layer；
On the substrate with the reflective metal layer side deposits dielectric materials, and by patterning processes remove with it is described
The corresponding dielectric material in hollowed out area, to obtain the dielectric layer.
8. according to the method described in claim 6, it is characterized in that, forming the catoptric arrangement and including:
Deposited sacrificial metal on the substrate, and it is golden using the sacrifice that patterning processes form the annular around the hollowed out area
Belong to block；
Be formed with the side deposition of reflective metal of the sacrificial metal block in the substrate, and using patterning processes removal with it is described
The corresponding reflective metals in hollowed out area, to form the reflective metal layer；
On the substrate with the reflective metal layer side deposits dielectric materials, and by patterning processes remove with it is described
The corresponding dielectric material in hollowed out area, to obtain the dielectric layer.
9. according to method described in claim 7 or 8, which is characterized in that formed after the reflective metal layer, described in formation
Before dielectric layer, further comprise: the substrate is made annealing treatment.
10. a kind of display device, which is characterized in that the backlight module of the display device includes any one of claim 1-4 institute
The direct-light-type backlight stated.
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| CN201910183390.3A CN109709722A (en) | 2019-03-12 | 2019-03-12 | Direct-light-type backlight and preparation method, backlight module and display device |
| PCT/CN2020/074701 WO2020181941A1 (en) | 2019-03-12 | 2020-02-11 | Backlight source and manufacturing method therefor, backlight module, and display device |
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| CN201910183390.3A CN109709722A (en) | 2019-03-12 | 2019-03-12 | Direct-light-type backlight and preparation method, backlight module and display device |
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