CN106848087B - Display module encapsulating structure and preparation method thereof - Google Patents
Display module encapsulating structure and preparation method thereof Download PDFInfo
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- CN106848087B CN106848087B CN201510895919.6A CN201510895919A CN106848087B CN 106848087 B CN106848087 B CN 106848087B CN 201510895919 A CN201510895919 A CN 201510895919A CN 106848087 B CN106848087 B CN 106848087B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
Abstract
The application provides a kind of encapsulating structure and preparation method thereof of display module; it is related to display device technical field; it can be used for preparing the relevant display device such as AMOLED; mainly by the way that display module is given seal protection using thin-film packing structure; oxygen characteristic is blocked water and transparent inorganic thin film layer is sealed display module using having; and film layer inside and outside stress is buffered by preparing organic mould group except inorganic thin film layer; and when being applied to production flexible device, film layer falls off caused by may also suppress because of bending stress.The bulge-structure that multiple-layer stacked is formed simultaneously can effectively inhibit inorganic layer plated film diffusion effect, increase thin-film device side and block water the quantity of barricade, can effectively promote packaging effect.And play support metal mask version in coating process, prevent it to be damaged to real estate pattern.Furthermore for replacing glass Frit glue encapsulation technology using thin-film package, the mechanical strength of whole display part is effectively promoted.
Description
Technical field
The present invention relates to the encapsulating structures and its preparation side of display device technical field more particularly to a kind of display module
Method.
Background technique
In the display device of electronic equipment, for generate light source such as electrodeless light emitting diode (LED) or organic hair
Optical diode (OLED) etc. shows that electronic device is Primary Component that can display device work normally, but above-mentioned electronic device
The erosion of the moisture and oxygen that are highly prone in external environment etc., therefore in order to ensure the normal operation of electronic device is needed to display
Electronic device carries out insulation blocking.
Currently, mainly cover-plate glass is fixed in array substrate using glass cement (Frit), will be arranged in array
Display electronic device on substrate is sealed；As shown in Figure 1, in the encapsulating structure of traditional display module, array substrate 11
On be provided with display module 12, by being pasted cover-plate glass 14 on array substrate 11 using glass cement 13, will show
Mould group 12 is sealed.
But due between the characteristic and cover-plate glass 14 and array substrate 11 of glass cement 13 itself there is gap etc. to lack
It falls into, so that the mechanical strength of encapsulating structure shown in Fig. 1 is weaker, breakage is easily generated when encountering external impact force, especially
In service life test, above-mentioned encapsulating structure easily generates gap and makes the destructive gas intrusion in external environment
Into encapsulating structure, above-mentioned display module 12 is caused to suffer erosion, or even display module 12 can be directly resulted in external impact
When be damaged, and then display device is caused to can not work normally.
Summary of the invention
In view of above-mentioned technical problem, this application provides a kind of display module encapsulating structures, can be applied in display device,
The display module encapsulating structure includes:
Array substrate, surface are provided with display module；
Bulge-structure is set on the surface of the array substrate and is located at the periphery of the display module；
The first film layer covers the display module and the battle array between the display module and the bulge-structure
The surface of column substrate, the display module is sealed；
Second film layer covers the part of the surface of the first film layer and the bulge-structure；
Third film layer covers second film layer, the part of the surface of the bulge-structure and the array substrate；
4th film layer covers the part of the surface of the third film layer；And
5th film layer covers the part of the surface of the 4th film layer and the third film layer, by the described 4th
Film layer is sealed on the third film layer；
The first film layer is not contacted with the third film layer；
Second film layer is not contacted with the array substrate.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The thin film transistor (TFT) display circuit connecting with the display module is additionally provided in the array substrate, to drive
The display module work.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The array substrate is low temperature polysilicon base plate.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The display module has the backlight surface for the light-emitting area of light injection and relative to the light-emitting area；
And
The backlight surface of the display module fits on the array substrate surface, described in the first film layer covering
The light-emitting area of display module.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The display module is OLED display module.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The bulge-structure is plural layers overlaying structure.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The material of the bulge-structure is the heterocycle polymer containing imine group and phenyl ring.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The thickness of the bulge-structure is greater than the sum of the thickness of the first film layer and second film layer.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The material of the first film layer, the third film layer and the 5th film layer is inorganic material, described
The material of second film layer and the 4th film layer is organic material.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The material of the first film layer is metal oxide or silicon nitride with block water oxygen and transparent characteristic.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The material of second film layer and the 4th film layer is the crylic acid resin with buffering and transparent characteristic
Compound.
As a preferred embodiment, in above-mentioned display module encapsulating structure:
The material of the third film layer and the 5th film layer is silicon nitride.
Present invention also provides a kind of preparation methods of display module encapsulating structure, comprising:
The array substrate that surface is provided with display module, and the institute at the display module periphery are formed after array processes
It states and is also formed with bulge-structure in array substrate；
It prepares the first film layer and covers the display module and the institute between the display module and the bulge-structure
The surface for stating array substrate, the display module is sealed；
In forming the second film layer on the surface of the first film layer exposure, and second film layer covering is described convex
Play the part of the surface of structure；
Preparation third film layer covers the part table of second film layer, the bulge-structure and the array substrate
Face, and contact the first film layer not with the third film layer；And
After forming the 4th film layer on the third film layer, the 5th film layer of preparation covers the 4th film layer
And the part of the surface of the third film layer, the 4th film layer is sealed on the third film layer；
Second film layer is not contacted with the array substrate.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
In preparing the thin film transistor (TFT) display circuit connecting with the display module in the array substrate, to drive
State display module work.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
The array substrate is low temperature polysilicon base plate.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
The display module has the backlight surface for the light-emitting area of light injection and relative to the light-emitting area；
And
The backlight surface of the display module is fitted on the array substrate surface, in shining for the display module
The first film layer is prepared on surface.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
The display module is OLED display module.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
It is superimposed to form the bulge-structure by plural layers in the array processes.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
The material of the bulge-structure is the heterocycle polymer containing imine group and phenyl ring.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
The thickness of the bulge-structure is greater than the sum of the thickness of the first film layer and second film layer.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
The first film layer, the third film layer and the 5th film are prepared using inorganic material depositing operation
Layer；And
Second film layer and the 4th film layer are prepared using organic material printing technology.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
Using atom layer deposition process deposition there is metal oxide or the silicon nitride of block water oxygen and transparent characteristic to prepare
The first film layer.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
It is described to prepare to have the crylic acid resin compound of buffering and transparent characteristic using ink-jet printing process spraying
Second film layer and the 4th film layer.
As a preferred embodiment, in the preparation method of above-mentioned display module encapsulating structure:
It is heavy using atom layer deposition process or chemical vapor deposition process or plasma enhanced chemical vapor deposition technique
Silicon nitride is accumulated to prepare the third film layer and the 5th film layer.
Above-mentioned technical proposal have the following advantages that or the utility model has the advantages that
The encapsulating structure of display module and preparation method thereof in technical solution in the application, can be used for preparing AMOLED
Etc. relevant display device, mainly by utilizing thin-film packing structure (Thin Film Encapsulation
Structure display module (such as OLED display module)) is given into seal protection, i.e., using having the oxygen characteristic and transparent of blocking water
Inorganic thin film layer is sealed display module, and is buffered inside and outside film layer by preparing organic mould group except inorganic thin film layer
Portion's stress, and when being applied to production flexible device, film layer falls off caused by may also suppress because of bending stress.Multiple-layer stacked shape simultaneously
At bulge-structure can effectively inhibit inorganic layer plated film diffusion effect, increase thin-film device side and block water the quantity of barricade, can
Effectively promote packaging effect.And play support metal mask version in coating process, prevent it to be damaged to real estate pattern.Again
Person, for replacing glass Frit glue encapsulation technology using thin-film package, the mechanical strength of whole display part is effectively promoted.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is the encapsulating structure of conventional display module；
Fig. 2~7 are the flow diagram that display module encapsulating structure is prepared in the embodiment of the present application.
Specific embodiment
Encapsulating structure of display module provided herein and preparation method thereof, mainly by utilizing thin-film package skill
Art (Thinning Film Encapsulation) carries out the display module being arranged in array substrate (such as OLED is shown)
Encapsulation, i.e., after being sealed using the inorganic thin film layer with blocking water oxygen to display module, recycling has cushion performance
Organic thin film layer covers above-mentioned inorganic thin film layer, to buffer film layer inside and outside stress, can be conducive to flexible device and make；Meanwhile
It is additionally provided with the bulge-structure for some strength in the periphery of display module, stops inorganic layer plated film diffusion effect, increases thin
Membrane module side block-water effect.And play support metal mask version in coating process, prevent it to be damaged to real estate pattern.
Furthermore for replacing glass Frit glue encapsulation technology using thin-film package, the mechanical strength of whole display part is effectively mentioned
It rises.
Audio-video conversion device of the invention is described in detail in the following with reference to the drawings and specific embodiments.
Embodiment one
Fig. 2~7 are the flow diagram that display module encapsulating structure is prepared in the embodiment of the present application；As shown in Figure 2-5,
This application provides a kind of preparation methods of display module encapsulating structure, it may include following steps:
Firstly, as shown in Figure 1, being based on a underlay substrate (such as low temperature polycrystalline silicon (Low Temperature Poly
Silicon, abbreviation LTPS) substrate) on the basis of carry out display device array (array) technique, to form array substrate 21；
It may be provided in above-mentioned array substrate 21 in the non-display area that viewing area is set with adjacent viewing area, the array in viewing area
It is mainly used for the attaching and preparation of display device on substrate 21；Meanwhile it being also provided on or in array substrate 21 thin
Film transistor display circuit, for driving the display module of subsequent preparation to work.
In addition, the table of the array substrate 21 during above-mentioned array processes also in the non-display area close to viewing area
Bulge-structure 23 is formed on face, which can be plural layers stacked structure (Bank), such as can be in above-mentioned array processes
During by the protruding figure (pattern) with certain altitude prepared using techniques such as exposure, development, etchings,
And the bulge-structure 23 can be for column or with shapes such as columns.
Preferably, the material of above-mentioned bulge-structure 23 can be the substance of main component carbon containing (C), nitrogen (N), oxygen (O), such as
Heterocycle polymer containing imido group and phenyl ring；Preferably, the material of the bulge-structure 23 is polyetherimide etc..
Secondly, attaching display module (such as luminous mould of OLED display module in the viewing area of above-mentioned array substrate 21
Group) 22, and the display module 22 is connect with above-mentioned thin film transistor (TFT) display circuit, i.e., the above-mentioned setting of bulge-structure 23 is aobvious
The periphery for showing mould group 22 can be used for showing the structures such as the first and second film layer of subsequent preparation, to form structure shown in Fig. 2；It should
There is certain gap (being mutually not in contact with each other) between display module 22 and bulge-structure 23, that is, be located at display module 22 and protrusion
The surface of array substrate 21 is exposed between structure 23.
Preferably, above-mentioned display module 22 may include cathode, anode and the organic hair being arranged between cathode and anode
The structures such as photosphere；Meanwhile above-mentioned display module 22 also has the light-emitting area for light injection (i.e. shown in Fig. 3
Surface) and relative to the light-emitting area backlight surface (i.e. lower surface shown in Fig. 3), i.e. the display module 22 is by upper
The backlight surface stated is attached on the surface of array substrate 21.
Later, using thin film encapsulation processes be sequentially prepared the first film layer 24, the second film layer 25, third film layer 26,
4th film layer 27 and the 5th film layer 28, specific:
It first passes through using such as process deposits such as atomic deposition (Atomic Layer Deposition, abbreviation ALD) such as
Aluminium oxide (AlOx), silicon nitride (SiNx), titanium oxide (TiO2) etc. inorganic material, there is block water oxygen and transparent characteristic to be formed
Electrodeless film layer forms above-mentioned the first film layer 24, and the first film layer 24 covers the above-mentioned exposure of display module 22
Surface and give exposed surface on the surface of the array substrate 21 between display module 22 and bulge-structure 23 (first is thin
Film layer 24 is covered in the region of display module 22 defined by bulge-structure 23, is not extended to bulge-structure 23 far from aobvious
In the region for showing 22 side of mould group).
Preferably, in order to enable the first film layer 24 of preparation has preferably sealing and transparent characteristic, oxidation can be selected
Aluminum for 300~500 angstroms of thickness inorganic thin film layer；Meanwhile the inorganic thin film layer is in covering 21 exposed surface of array substrate
It can be contacted simultaneously with least a portion of bulge-structure 23.
Then the spraying such as crylic acid resin such as handsome (Ink Jet Printer, abbreviation IJP) techniques are printed using such as ink-jet
The organic materials such as compound, to form organic thin film layer (monomer) on above-mentioned the first film layer 24, i.e. the second film layer
25；Second film layer 25 can play the problems such as such as package defect particles (particle) is to mitigate DP (issue), eliminate and answer
Power is to promote the mechanical strength of display device and the flatness (function of similar flatness layer) for improving 24 film of the first film layer etc.
Effect；Preferably, in order to enable the second film layer 25 has good above-mentioned mitigation DP, eliminates stress and promotes the property such as flatness
Can, it may make the thickness of second film layer 25 to be selected in the range of 15000~20000 angstroms.
It should be noted that the second film layer 25 is not contacted with above-mentioned array substrate 21, and second film layer 25 can be covered
Cover and state the part of the surface that bulge-structure 23 closes on display module side, i.e., at this time the top end surface of bulge-structure 23, far from aobvious
The part of the surface shown a side surface of mould group and close on the side of display module is exposed, i.e. the height of bulge-structure 23
(Fig. 5 is along the thickness perpendicular to display module light-emitting area direction) be greater than the first film layer 24 and the second film layer 25 thickness it
(i.e. Fig. 5 is along the thickness perpendicular to display module light-emitting area direction).
Later, such as chemical vapor deposition (chemical vapor deposition, abbreviation CVD), atomic layer can be used
Depositing operation (ALD) or plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor
Deposition, abbreviation PECVD) etc. process deposits such as silicon nitride (SiNx), aluminium oxide (AlOx), silica (SiOx) etc. nothings
Machine material, to form the inorganic thin film layer on covering 25 surface of the second film layer and 23 exposed surface of bulge-structure, i.e. third film
Layer 26, and the third film layer 26 wraps up above-mentioned bulge-structure 23 while, will close on the protrusion on the outside of bulge-structure 23
The surface of the array substrate 21 of structure 23 is covered.
It should be noted that third film layer 26 is in contact with above-mentioned array substrate 21, and the third film layer 26 is not only
The surface of the above-mentioned exposure of second film layer 25 and the surface of the exposure of above-mentioned bulge-structure 23 are covered, it is remote can also to cover bulge-structure 23
The part of the surface (i.e. non-display area) of array substrate 21 from 22 side of display module, so that by the first film layer 24, second
The thin-film packing structure that film layer 25 and third film layer 26 are constituted is wrapped up above-mentioned bulge-structure.
Preferably, in order to enable oxidation can be used with good block water oxygen characteristic and thicknesses of layers in third film layer 26
Aluminium prepares the inorganic thin film of 5000~10000 angstroms of thickness as above-mentioned third film layer 26, i.e., the third film layer 26 across
More above-mentioned bulge-structure 23 is covered on the surface of the second film layer 25 and the surface of the non-display area of array substrate 21 simultaneously.
Later, technique identical with the second film layer 25 can be used and prepare the 4th film layer on third film layer 26
27, that is, such as ink-jet can be used and print the spraying such as crylic acid resin chemical combination such as handsome (Ink Jet Printer, abbreviation IJP) techniques
The organic materials such as object, to form organic thin film layer (monomer) on above-mentioned third film layer 26, i.e. the 4th film layer 27；
4th film layer 27 can also play the problems such as such as package defect particles (particle) is to mitigate DP (issue), eliminate and answer
Power is to promote the mechanical strength of display device and the flatness (function of similar flatness layer) for improving 26 film of third film layer etc.
Effect, i.e., structure shown in fig. 6；Preferably, in order to enable the 4th film layer 27 has good above-mentioned mitigation DP, eliminates stress
And the performances such as flatness are promoted, it may make the thickness of the 4th film layer 27 to be also selected in the range of 15000~20000 angstroms.
It should be noted that the 4th film layer 27 is not also contacted with above-mentioned array substrate 21, i.e. the 4th film layer 27 is only
The part of the surface of above-mentioned third film 26 is covered, and the surface that the third film 26 closes at 21 position of array substrate is given
Exposure, in order to which the 4th film layer 27 is sealed on the surface of third film layer 26 by the 5th film layer 28 of subsequent preparation.
Finally, as shown in fig. 7, such as chemical vapor deposition (chemical vapor deposition, letter can also be used
Claim CVD), atom layer deposition process (ALD) or plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical
Vapor Deposition, abbreviation PECVD) etc. process deposits such as silicon nitride (SiNx), aluminium oxide (AlOx), silica
(SiOx) etc. inorganic material, with formed covering 27 surface of the 4th film layer and third film layer 26 exposure surface inorganic thin film
Layer, i.e. the 5th film layer 28, and the 4th above-mentioned film layer 27 is sealed in the table of third film layer 26 by the 5th film layer 28
On face.
It should be noted that the 5th film layer 28 can be in contact with the surface of above-mentioned array substrate 21 or not contact, and should
5th film layer 28 not only covers the surface of above-mentioned 4th film layer 27 exposure and the surface of the above-mentioned exposure of third film layer 26,
The part of the surface (i.e. non-display area) closed at 26 position of third film layer in array substrate 21 can be also covered, so that by first
The thin-film package knot that film layer 24, the second film layer 25, third film layer 26, the 4th film layer 27 and the 5th film layer 28 are constituted
Structure is wrapped up above-mentioned bulge-structure.
Preferably, in order to enable oxidation can be used with good block water oxygen characteristic and thicknesses of layers in the 5th film layer 28
Aluminium prepares the inorganic thin film of 5000~10000 angstroms of thickness as the 5th above-mentioned film layer 28.
In the present embodiment, completing above-mentioned thin-film packing structure, (i.e. the first film layer 24, the second film layer 25, third are thin
Film layer 26, the 4th film layer 27 and the 5th film layer 28) preparation process after, the subsequent cover board that can will be used to form display device
The stickup of the device architectures such as glass is fixed on the thin-film packing structure of above-mentioned formation, to be finally completed the preparation work of display device
Skill.
In the present embodiment, due to above-mentioned inorganic thin film (i.e. the first film layer 24, third film layer 26 and the 5th film
28) layer has the oxygen sealing performance that blocks water, and light transmission is excellent, therefore can obtain display module effectively to seal off makes
It not will receive the infringement that water oxygen in external environment etc. corrodes gas；And the organic film between inorganic thin film is set (i.e.
Second film layer 25 and the 4th film layer 27) internal stress and external stress can be effectively buffered again, while by thin-film package knot
The bulge-structure of structure package can inhibit inorganic coating process to spread again, and support whole display part, so being based on the present embodiment
The encapsulating structure and display device of the display module of preparation have excellent sealing performance and stronger overall mechanical strength and soft
Property degree.
Embodiment two
It can be based on the above embodiment on the basis of one, as shown in fig. 7, additionally providing a kind of display mould in the embodiment of the present application
Group encapsulating structure, and the display module encapsulating structure can be used for preparing various display devices (such as OLED display device), it is above-mentioned
Display module encapsulating structure includes:
Array substrate 21 can be the substrate of completion array (array) technique, it may include but be not limited to LTPS substrate etc.；
The array substrate 21 can have front face surface (i.e. upper surface shown in Fig. 5) for device to be arranged and relative to the upper surface
Lower surface (i.e. Fig. 5,6 shown in lower surface)；The material of the substrate is chosen as glass, can also use hard substrate or flexibility
Substrate forms the array substrate 21, and in the array substrate 21 or on may be provided with drive for driving display module luminous
The device architectures such as dynamic circuit.
In addition, above-mentioned array substrate 21 is provided with the viewing area for display device structure to be arranged and closes on the viewing area
Non-display area, and with display module (such as OLED display module) 22 is provided in the front face surface of the array substrate of viewing area 21,
The display module 22 has for the light-emitting area (upper surface i.e. shown in fig. 5) of light injection and relative to the light-emitting area
Backlight surface (lower surface i.e. shown in fig. 5), i.e., the backlight surface of above-mentioned display module 22 fit in the front table of substrate 21
On face.
Preferably, it is also other kinds of luminous mould that above-mentioned OLED display module 22, which can be organic light emission (OLED) mould group,
Group, such as may include cathode, anode and the organic luminous layer structure being arranged between cathode and anode, and the display module 22 with
Above-mentioned driving circuit connection.
Meanwhile it is additionally provided in the front face surface of above-mentioned array substrate 22 including plural layers superposition film (bank)
Bulge-structure 23 (such as column or the protrusion with column shape), and the bulge-structure 23 may be disposed at above-mentioned display module
Periphery；In addition, bulge-structure 23 can be certain by having for the techniques preparation such as exposure, development, etching in upper array processes
The protruding figure of height, and its material can include the substance that carbon, nitrogen, oxygen etc. have certain degree of hardness for main component, such as containing Asia
The substances such as the heterocycle polymer of amine groups and phenyl ring, preferably polyetherimide.
The first film layer 24 covers the surface of the above-mentioned exposure of display module 22 and between display module 22 and bulge-structure 23
Between the surface that is exposed of array substrate 21, display module 22 is sealed；The first film layer 24 can be inorganic thin film
Layer, such as its material can be aluminium oxide, titanium oxide or silicon nitride inorganic material, have excellent block water oxygen and transparent spy
Property；Such as the first film layer 24 can be 300~500 angstroms of thickness oxidation aluminium films, and the first film layer 24 will be with above-mentioned battle array
The surface of column substrate 21 contacted (correspondingly, between bulge-structure 23 and display module 22 have certain gap, and on
The first film layer 24 stated is filled and is covered on the surface for the array substrate 21 that the gap is exposed).
Second film layer 25 covers the surface of the above-mentioned exposure of the first film layer 24 and the surface of part bulge-structure 23；It should
Second film layer 25 can be the organic material films such as crylic acid resin compound, can wrap up defect particles
(particle) while mitigating DP problem, moreover it is possible to eliminate stress and promote device mechanical strength, while can also improve above-mentioned first
The surface smoothness (similar planarization layer) of film layer 24；But (thickness can be at 15000~20000 angstroms for second film layer 25
Between) stopped not contact with above-mentioned array substrate 21 by bulge-structure 23, and the thickness of bulge-structure 23 is greater than first
The sum of the thickness of film layer 24 and the second film layer 25.
Third film layer 26, the surface and close on convex that the surface of covering the second film layer 25 exposure, bulge-structure 23 expose
Play the surface of structure 23 and the array substrate 21 far from 22 side of display module；The third film layer 26 can also be such as to nitrogenize
The inorganic material films such as silicon, aluminium oxide or silica, and together will be above-mentioned with above-mentioned the first film layer 24, the second film layer 25
Bulge-structure 23 be wrapped in the front face surface of array substrate 21.
Preferably, in order to enable display device has good sealing performance, the material of above-mentioned third film layer can be
Silicon nitride (SiN) film of about 5000~10000 angstroms of thickness of thickness.
4th film layer 27, in the part of the surface for covering above-mentioned third film layer 26, and by 26 surface of third film layer
Fringe region (region that array substrate 11 is closed on 26 surface of third film layer) exposed.
5th film layer 28 covers the surface of above-mentioned 4th film layer 27 exposure and the surface of the exposure of third film layer 26,
The 4th film layer 27 to be sealed on the surface of third film layer 26.
Preferably, the characteristics such as the material of the 4th above-mentioned film layer 27 and film layer structure size can be with the second above-mentioned film
Layer 25 is approximate or identical, such as the 4th film layer 27 can also be such as crylic acid resin compound organic material film,
While defect particles (particle) mitigation DP problem can be wrapped up, moreover it is possible to it eliminates stress and promotes device mechanical strength, while
The surface smoothness (similar planarization layer) of above-mentioned third film layer 26 can also be improved；But 27 (thickness of the 4th film layer
Can also be between 15000~20000 angstroms) also do not contacted with above-mentioned array substrate 21.
Likewise, the characteristics such as material and film layer structure size of the 5th above-mentioned film layer 28 then can be thin with above-mentioned third
Film layer 26 is approximate or identical, such as the material of the 5th film layer 28 can also be inorganic for such as silicon nitride, aluminium oxide or silica
Material film, and together will with above-mentioned the first film layer 24, the second film layer 25, third film layer 26 and the 4th film layer 27
Above-mentioned bulge-structure 23 is wrapped in the front face surface of array substrate 21, and in order to enable display device has good sealing
Performance, the material of the 5th above-mentioned film layer 28 can also be silicon nitride (SiN) film of about 5000~10000 angstroms of thickness of thickness.
It should be noted that structure provided in the present embodiment method that can record in one based on the above embodiment is made
It is standby, therefore the technical characteristics such as positional relationship between preparation process, film layer material and the film layer described in example 1 can fit
For in the structure of this implementation, therefore just not tired herein state.
To sum up, display module encapsulating structure and preparation method thereof in the embodiment of the present application, by utilizing thin film encapsulation processes
Display module is directly packaged on substrate by the display module encapsulating structure of formation, and the display module encapsulating structure is simultaneous simultaneously
Have block water oxygen characteristic and cushion performance, and then while ensuring display module sealing effect, and can effectively buffer inside and answer
Power and external stress, film layer falls off when can avoid production flexible device, is formed by display device structure after also may make finished product
The external impact force produced by dropping, being collided etc. also can be buffered effectively, to substantially reduce display module because by outer
Portion's impact force and the stress collection that causes it is medium caused by generation the defects of splitting screen, broken screen, and then it is whole to improve display device
The structural strength of body, to effectively improve the performance and yield that prepare display device.Meanwhile it being wrapped up by thin-film packing structure convex
Playing structure can effectively inhibit inorganic coating process to spread again, while support whole display part, so being prepared based on the present embodiment
Display module encapsulating structure and display device there is excellent sealing performance and stronger overall mechanical strength and flexible journey
Degree.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (24)
1. a kind of display module encapsulating structure, which is characterized in that the display module encapsulating structure includes:
Array substrate, surface are provided with display module；
Bulge-structure is set on the surface of the array substrate and is located at the periphery of the display module；
The first film layer covers the display module and the array base between the display module and the bulge-structure
The surface of plate, the display module is sealed；
Second film layer covers the part of the surface of the first film layer and the bulge-structure；
Third film layer covers second film layer, the part of the surface of the bulge-structure and the array substrate；
4th film layer covers the part of the surface of the third film layer；And
5th film layer covers the part of the surface of the 4th film layer and the third film layer, by the 4th film
Layer is sealed on the third film layer；
The first film layer is not contacted with the third film layer；
Second film layer is not contacted with the array substrate.
2. display module encapsulating structure as described in claim 1, which is characterized in that be additionally provided in the array substrate and institute
The thin film transistor (TFT) display circuit for stating display module connection, to drive the display module to work.
3. display module encapsulating structure as claimed in claim 2, which is characterized in that the array substrate is low-temperature polysilicon silicon substrate
Plate.
4. display module encapsulating structure as described in claim 1, which is characterized in that in the display module encapsulating structure:
The display module has the backlight surface for the light-emitting area of light injection and relative to the light-emitting area；And
The backlight surface of the display module fits on the array substrate surface, and the first film layer covers the display
The light-emitting area of mould group.
5. display module encapsulating structure as described in claim 1, which is characterized in that the display module is that OLED shows mould
Group.
6. display module encapsulating structure as described in claim 1, which is characterized in that the bulge-structure is plural layers superposition
Structure.
7. display module encapsulating structure as claimed in claim 6, which is characterized in that the material of the bulge-structure is to contain Asia
The heterocycle polymer of amine groups and phenyl ring.
8. display module encapsulating structure as described in claim 1, which is characterized in that the thickness of the bulge-structure is greater than described
The sum of the thickness of the first film layer and second film layer.
9. display module encapsulating structure as described in claim 1, which is characterized in that the first film layer, the third are thin
The material of film layer and the 5th film layer is inorganic material, and the material of second film layer and the 4th film layer is equal
For organic material.
10. display module encapsulating structure as claimed in claim 9, which is characterized in that the material of the first film layer is tool
There are the metal oxide or silicon nitride of block water oxygen and transparent characteristic.
11. display module encapsulating structure as claimed in claim 9, which is characterized in that second film layer and the 4th film
The material of layer is the crylic acid resin compound with buffering and transparent characteristic.
12. display module encapsulating structure as claimed in claim 9, which is characterized in that the third film layer and the described 5th
The material of film layer is silicon nitride.
13. a kind of preparation method of display module encapsulating structure, which is characterized in that the described method includes:
The array substrate that surface is provided with display module, and the battle array at the display module periphery are formed after array processes
Bulge-structure is also formed on column substrate；
It prepares the first film layer and covers the display module and the battle array between the display module and the bulge-structure
The surface of column substrate, the display module is sealed；
In forming the second film layer on the surface of the first film layer exposure, and second film layer covering protrusion knot
The part of the surface of structure；
Preparation third film layer covers second film layer, the part of the surface of the bulge-structure and the array substrate, and
Contact the first film layer not with the third film layer；And
After forming the 4th film layer on the third film layer, the 5th film layer of preparation covers the 4th film layer and institute
4th film layer is sealed on the third film layer by the part of the surface for stating third film layer；
Second film layer is not contacted with the array substrate.
14. the preparation method of display module encapsulating structure as claimed in claim 13, which is characterized in that in the array substrate
The thin film transistor (TFT) display circuit connecting with the display module is prepared, to drive the display module to work.
15. the preparation method of display module encapsulating structure as claimed in claim 14, which is characterized in that the array substrate is low
Warm polycrystalline silicon substrate.
16. the preparation method of display module encapsulating structure as claimed in claim 13, which is characterized in that in the method:
The display module has the backlight surface for the light-emitting area of light injection and relative to the light-emitting area；And
The backlight surface of the display module is fitted on the array substrate surface, in the light-emitting area of the display module
It is upper to prepare the first film layer.
17. the preparation method of display module encapsulating structure as claimed in claim 13, which is characterized in that the display module is
OLED display module.
18. the preparation method of display module encapsulating structure as claimed in claim 13, which is characterized in that in the array processes
It is superimposed to form the bulge-structure by plural layers.
19. the preparation method of display module encapsulating structure as claimed in claim 13, which is characterized in that the material of the bulge-structure
Matter is the heterocycle polymer containing imine group and phenyl ring.
20. the preparation method of display module encapsulating structure as claimed in claim 13, which is characterized in that the thickness of the bulge-structure
Degree is greater than the sum of the thickness of the first film layer and second film layer.
21. the preparation method of display module encapsulating structure as claimed in claim 13, which is characterized in that in the method:
The first film layer, the third film layer and the 5th film layer are prepared using inorganic material depositing operation；With
And
Second film layer and the 4th film layer are prepared using organic material printing technology.
22. the preparation method of display module encapsulating structure as claimed in claim 21, which is characterized in that use atomic layer deposition work
There is skill deposition metal oxide or the silicon nitride of block water oxygen and transparent characteristic to prepare the first film layer.
23. the preparation method of display module encapsulating structure as claimed in claim 21, which is characterized in that use ink-jet printing process
Spraying, there is the crylic acid resin compound of buffering and transparent characteristic to prepare second film layer and the 4th film
Layer.
24. the preparation method of display module encapsulating structure as claimed in claim 21, which is characterized in that use atomic layer deposition work
Skill or chemical vapor deposition process or plasma enhanced chemical vapor deposition process deposits silicon nitride are thin to prepare the third
Film layer and the 5th film layer.
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| CN107403877B (en) * | 2017-06-19 | 2019-10-25 | 武汉华星光电半导体显示技术有限公司 | The packaging method of oled panel |
| US10724139B2 (en) * | 2017-06-19 | 2020-07-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Encapsulation method for OLED Panel |
| CN107275518B (en) * | 2017-07-05 | 2020-04-17 | 京东方科技集团股份有限公司 | OLED film packaging structure and packaging device |
| CN207381403U (en) * | 2017-08-31 | 2018-05-18 | 京东方科技集团股份有限公司 | Display base plate, display panel |
| CN107464889A (en) | 2017-09-25 | 2017-12-12 | 京东方科技集团股份有限公司 | Encapsulating structure of Organic Light Emitting Diode and preparation method thereof |
| CN108649138B (en) | 2018-04-28 | 2020-09-04 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| CN109585682B (en) * | 2018-12-06 | 2020-09-29 | 合肥鑫晟光电科技有限公司 | Packaging method and packaging structure of light-emitting device and display device |
| CN111445801B (en) * | 2020-05-06 | 2022-10-11 | 京东方科技集团股份有限公司 | Display panel and display device |
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| KR101420332B1 (en) * | 2012-11-14 | 2014-07-16 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
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