CN202957284U

CN202957284U - Patterned substrate used to prepare LED flip chip

Info

Publication number: CN202957284U
Application number: CN201220470653.2U
Authority: CN
Inventors: 陈立人; 陈伟; 刘慰华
Original assignee: FOCUS LIGHTINGS TECH Inc
Current assignee: Focus Lightings Technology Suqian Co ltd
Priority date: 2012-09-17
Filing date: 2012-09-17
Publication date: 2013-05-29
Anticipated expiration: 2022-09-17

Abstract

The utility model discloses a novel patterned substrate specially used to prepare an LED flip chip. The patterned substrate used to prepare the LED flip chip is characterized in that a layer of or multi-layer of thin film materials are deposited on the surface of a flat sapphire substrate; wherein the refractive indexes of the thin film materials are different from the refractive index (n=1.76) of the sapphire, and the materials can be but are not limited by titanium oxide, zinc oxide, magnesium oxide, etc.; and then tapered or cylindrical patterns are etched by utilizing an ICP dry method, so that the luminous efficiency can be improved effectively. The novel patterned substrate of the utility model mainly aims at the flip chip, and the surface coatings or overall materials of the substrate patterns (tapered or cylindrical patterns) are non-sapphire materials. When the photons of the flip chip pass the coatings (a layer of or multi-layer of coatings), the refractive indexes of the thin film materials are different, so that the total reflection light paths of the photons are damaged, and accordingly, the luminous efficiency can be increased furthest. The patterned substrate provided by the utility model enables the luminous efficiency of the flip chip to be improved by more than 15%.

Description

Patterned substrate for the preparation of the LED flip-chip

Technical field

The utility model relates to the patterned substrate for the preparation of the LED flip-chip.

Background technology

The LED that adds the rectangular cavity structure of back of the body plating for traditional upside-down mounting, because sapphire refractive index is 1.76, the refractive index of gallium nitride is 2.4, cause photon by after sending in the quantum well in the epitaxial loayer owing to refractive index is inconsistent, during through the Sapphire Substrate medium, can form reflection, the angle of emergence greater than the photon of the angle of total reflection because not sudden change of light path, finally can only be at device inside Multi reflection back and forth, energy slowly decays to zero.In theory approximately only less than half photon shooting angle less than the angle of total reflection, thereby can be from the device surface outgoing, this is to cause the light of flip-chip to take out the lower one of the main reasons of efficient.

Summary of the invention

The purpose of this utility model is for the low problem of LED flip-chip light emission rate of the prior art, and a kind of patterned substrate of effective increase light emission rate is provided.

For reaching above purpose, the utility model provides a kind of patterned substrate for the preparation of the LED flip-chip, it comprises sapphire substrates, be deposited on one or more layers semiconductor material thin film of described sapphire substrates upper surface, etching is formed with graphic array on the described semiconductor material thin film, wherein, the refractive index of described semiconductor material thin film is between the refractive index of the refractive index of Sapphire Substrate and GaN material, graph substrate described in the utility model is to utilize the preparation of ICP etching technics, described novel graphic substrate is mainly for the LED flip-chip, cooperate back of the body depositing process, can greatly promote light emission rate.

Substrate of the present utility model is based on the plane sapphire substrate, utilize magnetron sputtering technique at one or more layers thin-film material of its surface deposition, such as titanium oxide, zinc oxide, the materials such as silicon dioxide, this which floor thin-film material can be the ABAB superlattice structure of the stacked formation in bi-material space, it also can be the structure that the ABCD of the mutual stacked setting of different materials is superimposed, the refractive index of different materials is between the refractive index of the refractive index of Sapphire Substrate and GaN material, be between 1.67 to 2.4, adjust the different of the thickness of multi-layer thin rete and material, can destroy to the full extent the full emission probability of photon.

As the further prioritization scheme of this patent, the gross thickness of described one or more layers semiconductor film material is no more than 1000 nm, and less than the degree of depth of etching.

As the further prioritization scheme of this patent, the gross thickness of described one or more layers semiconductor film material is 100 nm～600 nm.

As the further prioritization scheme of this patent, described semi-conducting material comprises titanium oxide, zinc oxide, silicon dioxide, magnesium oxide.

As the further prioritization scheme of this patent, etching is formed with the graphic array of taper or cylindricality on the described semiconductor material thin film.The figure of this substrate is taper or column, and the taper figure is of a size of, height 1～3 um; Diameter 1～5 um; Spacing 0.2～1um; The size of column figure, height 1～2.5 um, cylindricality base diameter 1～5 um; Spacing 0.3～0.4 um.

Owing to adopted above technical scheme, the utility model is by inserting the single or multiple lift thin-film material, and recycling ICP etches graphic array, can realize that flip-chip light takes out the purpose of improved efficiency.By the thin-film material on simple increase plain film Sapphire Substrate surface, utilize existing ICP etching technics, need not to increase in addition any controlled collapsible chip connec-tion, fully compatible with existing chip technology.The utility model has destroyed the total reflection light path of photon in sapphire material by preparation novel graphic substrate technology, can increase to the full extent more than light extraction efficiency 15 %.

Description of drawings

Fig. 1 is the schematic diagram according to taper graph substrate of the present utility model, the thin-film materials such as its surface coverage one deck titanium oxide, zinc oxide, silica;

Fig. 2 has showed taper graph substrate cross section profile;

Fig. 3 is the schematic diagram according to column graph substrate of the present utility model, and its alumina surface has the different refractivity material to be formed by stacking;

Fig. 4 has showed cylindricality figure substrate cross-section profile.

Embodiment

Below in conjunction with accompanying drawing preferred embodiment of the present utility model is described in detail, thereby so that advantage of the present utility model and feature can be easier to be it will be appreciated by those skilled in the art that protection range of the present utility model is made more explicit defining.

Referring to accompanying drawing 1 to shown in the accompanying drawing 4, a kind of patterned substrate for the preparation of the LED flip-chip, it comprises sapphire substrates, is deposited on one or more layers semiconductor material thin film of sapphire substrates upper surface, etching is formed with graphic array on the semiconductor material thin film, wherein, the refractive index of semiconductor material thin film is between the refractive index of the refractive index of Sapphire Substrate and GaN material, the utility model graph substrate is to utilize the preparation of ICP etching technics, novel graphic substrate is mainly for the LED flip-chip, cooperate back of the body depositing process, can greatly promote light emission rate.

Substrate of the present utility model is based on the plane sapphire substrate, utilize magnetron sputtering technique at one or more layers thin-film material of its surface deposition, such as titanium oxide, zinc oxide, silicon dioxide, the materials such as magnesium oxide, this which floor thin-film material can be the ABAB superlattice structure of the stacked formation in bi-material space, it also can be the structure that the ABCD of the mutual stacked setting of different materials is superimposed, the refractive index of different materials is between the refractive index of the refractive index of Sapphire Substrate and GaN material, be between 1.67 to 2.4, adjust the different of the thickness of multi-layer thin rete and material, can destroy to the full extent the full emission probability of photon.The gross thickness of above-mentioned one or more layers semiconductor film material is no more than 1000 nm, and less than the degree of depth of etching.In other real-time mode, its gross thickness is 100 nm～600 nm.

On the Sapphire Substrate that has deposited distribution Bragg reflector DBR, by mask plate, by ICP dry etching taper (Fig. 1,2) or column (Fig. 3,4) figure as shown in the figure, the taper figure is of a size of height 1～3 um; Diameter 1～5 um; Spacing 0.2～1um; The column figure is of a size of, height 1～2.5 um, cylindricality base diameter 1～5 um; Spacing 0.3～0.4 um.This kind substrate can effectively promote photon outgoing efficient mainly for flip-chip.At the novel graphic substrate growing epitaxial layers of this utility model, preparation inverted structure chip.

Above execution mode only is explanation technical conceive of the present utility model and characteristics; its purpose is to allow the people that is familiar with technique understand content of the present utility model and is implemented; can not limit protection range of the present utility model with this, all equivalences of doing according to the utility model Spirit Essence change or modification all is encompassed in the protection range of the present utility model.

Claims

1. patterned substrate for the preparation of the LED flip-chip, it is characterized in that: it comprises sapphire substrates, is deposited on one or more layers semiconductor material thin film of described sapphire substrates upper surface, etching is formed with graphic array on the described semiconductor material thin film, wherein, the refractive index of described semiconductor material thin film is between the refractive index of the refractive index of Sapphire Substrate and GaN material.

2. the patterned substrate for the preparation of the LED flip-chip according to claim 1, it is characterized in that: described sapphire substrates upper surface deposits the multi-lager semiconductor material film, the mutual stacked setting of described multi-lager semiconductor material film.

3. the patterned substrate for the preparation of the LED flip-chip according to claim 2, it is characterized in that: described sapphire substrates upper surface deposits the multi-lager semiconductor material film, and described multi-lager semiconductor material film is by two kinds of stacked superlattice structures that consist of in semi-conducting material space.

4. the patterned substrate for the preparation of the LED flip-chip according to claim 1, it is characterized in that: the gross thickness of described one or more layers semiconductor film material is no more than 1000 nm, and less than the degree of depth of etching.

5. the patterned substrate for the preparation of the LED flip-chip according to claim 4, it is characterized in that: the gross thickness of described one or more layers semiconductor film material is 100 nm～600 nm.

6. the patterned substrate for the preparation of the LED flip-chip according to claim 1, it is characterized in that: etching is formed with the graphic array of taper or cylindricality on the described semiconductor material thin film.

7. the patterned substrate for the preparation of the LED flip-chip according to claim 6 is characterized in that: described taper graphic array is of a size of height 1～3 um, diameter 1～5 um, spacing 0.2～1um.

8. the patterned substrate for the preparation of the LED flip-chip according to claim 6 is characterized in that: described cylindricality graphic array is of a size of height 1～2.5 um, cylindricality base diameter 1～5 um, spacing 0.3～0.4 um.