CN105590995B - A kind of light emitting diode with vertical structure and preparation method thereof - Google Patents
A kind of light emitting diode with vertical structure and preparation method thereof Download PDFInfo
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- CN105590995B CN105590995B CN201610091308.0A CN201610091308A CN105590995B CN 105590995 B CN105590995 B CN 105590995B CN 201610091308 A CN201610091308 A CN 201610091308A CN 105590995 B CN105590995 B CN 105590995B
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- hexagonal pyramidal
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 206010040844 Skin exfoliation Diseases 0.000 abstract description 3
- 230000035618 desquamation Effects 0.000 abstract description 2
- 230000005622 photoelectricity Effects 0.000 abstract 1
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
The present invention provides a kind of light emitting diode with vertical structure and preparation method thereof, the miniature bar-shaped light emitting diode with vertical structure of micron order or nano level both ends of the surface for hexagonal pyramidal is produced by etch process and substrate desquamation technique, to meet that biomedicine, photoelectricity etc. are related to the field of micro-led demand to micro-led demand.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, more particularly to a kind of light emitting diode with vertical structure and its making side
Method.
Background technology
In recent years, light emitting diode（LED）Just towards high brightness, size miniaturization（Micron even nanometer scale）Direction
Development.Application developments of the miniature LED in fields such as biomedicines is more and swifter and more violent.GaN base LED is due to refraction coefficient and air
Differ larger, the problem of light extraction efficiency is low be present.The usual one side in surface of GaN base vertical structure LED uses patterned six
Pyramid GaN layer structure, to improve light extraction efficiency.But in the micro-led side being combined with hexagonal pyramidal structure
Method and structure are not suggested also.Market needs to invent a kind of vertical structure LED for making miniature and high brightness, with meet research and
The demand of production.
The content of the invention
The purpose of the present invention is：The miniature bar-shaped vertical stratification that a kind of controllable, both ends uniform in size are hexagonal pyramidal is provided
Light emitting diode and preparation method thereof.
The first aspect of the present invention, there is provided a kind of preparation method of light emitting diode with vertical structure, including following technique step
Suddenly：
1）First substrate is provided, grows light emitting epitaxial layer on the first substrate, light emitting epitaxial layer includes the first extension successively
Layer, luminescent layer, the second epitaxial layer；
2）A plurality of second hexagonal pyramidal patterns are made in second epi-layer surface；
3）Bonded layer is deposited in second epi-layer surface, covers the second hexagonal pyramidal pattern；
4）Second epitaxial layer is bonded on second substrate；
5）The first substrate is peeled off, exposes first epitaxial layer；
6）By lithography alignment technology, with the second hexagonal pyramidal pattern opposite position in the second epitaxial layer, use
Etch process, produces the first hexagonal pyramidal pattern in first epi-layer surface, and the etch process continues first
Etching gaps between hexagonal pyramidal are penetrated into the gap between the second hexagonal pyramidal, directly reach bonded layer；
7）Remove bonded layer and second substrate.
Preferably, step 2）Middle utilization light shield is etched in second epi-layer surface and produces the second hexagonal pyramidal figure
Case.
Preferably, the first hexagonal pyramidal adjacent spacing is 100nm ~ 800nm, the second hexagonal pyramidal adjacent spacing
For 100nm ~ 800nm.
Preferably, step 6）Lost before making the first hexagonal pyramidal for increase etching selectivity, on the first epitaxial layer making
Selection is carved than high graphic mask layer, graphic mask layer material is SiO2Or SiNx。
Preferably, step 6）First hexagonal pyramidal pattern is produced using etch process, etch process is mainly by first paragraph
Dry etching is etched to selection than high mask layer and second segment dry etching forms.
Preferably, the first paragraph dry etching and second segment dry etching in ICP inductive couplings plasma etching or
Carried out in the Dry etching equipments such as RIE reactive ion etchings, the etching gas composition that first paragraph dry etching uses includes CHF3
And Ar, the etching gas composition that the second segment dry etching uses include Cl2And Ar.
The second aspect of the present invention, there is provided a kind of light emitting diode with vertical structure, successively including the first epitaxial layer, luminous
Layer, the second epitaxial layer, the vertical LED is club shaped structure, and rod both ends are hexagonal vertebra shape, and rod footpath is 20nm ~ 800nm.
Preferably, first epitaxial layer includes the first hexagonal pyramidal, and second epitaxial layer includes the second hexagonal pyramidal,
The bottom surface of first hexagonal pyramidal and second hexagonal pyramidal overlaps with two bottom surfaces of a column construction respectively.
Preferably, the length of the club shaped structure is 90nm ~ 8000nm.
Preferably, the inclination angle of the side opposing bottom surface of first hexagonal pyramidal and the second hexagonal pyramidal is 50 ° ~ 70 °.
The present invention is relative to prior art, including at least following technique effect：According to the preparation method of the present invention, pass through tune
The technological parameter of whole dry ecthing, the making of nanoscale light emitting diode with vertical structure is realized, meet that certain fields are sent out nanoscale
The application demand of optical diode, both ends use hexagonal pyramidal structure, and light extraction efficiency can be greatly improved and realize that 360 degree go out light efficiency
Fruit.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, implements with the present invention
Example is used to explain the present invention together, is not construed as limiting the invention.In addition, accompanying drawing data be description summary, be not by than
Example is drawn.
Indicated in figure：
Fig. 1 ~ Figure 10 is the process flow diagram that the embodiment of the present invention 1 makes vertical LED.
Figure 11 makes light emitting diode with vertical structure schematic perspective view for the present invention.
100：First substrate；200：First epitaxial layer；210：First hexagonal pyramidal；300：Luminescent layer；400：Second extension
Layer；410：Second hexagonal pyramidal；500：Mask layer；600：Bonded layer；700：Second substrate；
Embodiment
The present invention is described in detail with reference to schematic diagram, before proceeding to further describe the invention, it will be appreciated that
Due to can transform specific embodiment, therefore, the present invention is not limited to following specific embodiments.It should also manage
Solution, because the scope of the present invention is only defined by the following claims, therefore used embodiment is introductory, rather than
Restricted.Unless otherwise stated, used herein of all technologies and scientific words and one of ordinary skill in the art
The meaning being commonly understood by is identical.
Embodiment 1
As shown in Fig. 1 ~ 10, the present embodiment provides a kind of preparation method of light emitting diode with vertical structure, including following work
Skill step：
（1）As shown in Figure 1, there is provided first substrate 100；The present embodiment uses MOCVD（Metal organic chemical vapor deposition）
100 growth light emitting epitaxial layer, light emitting epitaxial layer include the first epitaxial layer 200, the extension of luminescent layer 300 and second successively on one substrate
Layer 400.
（2）As shown in Fig. 2 ~ 3, a plurality of second hexagonal pyramidals are formed by epitaxial manufacture process on the surface of the second epitaxial layer 400
410, specifically, the epitaxial manufacture process for forming the second hexagonal pyramidal 410 is：Opened on the surface of the second epitaxial layer 400 using photoresist
Light shield, the photoresist of the present embodiment are opened the light cover using SU-8 photoresistances, SU-8 patterns are made, as etch stop layer.Then, utilize
The etching machines such as RIE or ICP carry out dry etching, after SU-8 photoresistances have etched, due to by GaN base hexagonal wurtzite structure
Influence, etch out the pattern of the second hexagonal pyramidal 410, a diameter of 20nm ~ 80nm in taper bottom surface, the side of the second hexagonal pyramidal 410
While it is 50 ° ~ 70 ° relative to the inclined angle alpha of bottom surface.
（3）As shown in figure 4, depositing bonded layer 600 in the second epi-layer surface, the second hexagonal pyramidal 410 is covered.
（4）As shown in figure 5, by bonding technology, the second epitaxial layer 400 is bonded on second substrate 700.
（5）As shown in fig. 6, peeling off first substrate 100 using substrate desquamation technique, the first epitaxial layer 200 is exposed.
（6）As shown in Fig. 7 ~ 8, using lithography alignment technology, a layer pattern is made in the first epitaxial layer 200 by photoresist
Change mask layer 500, the position of the mask layer 500 is corresponding with the position of the second hexagonal pyramidal 410.Using dry etching technology by mask
Layer 500 has all etched, and etching forms first hexagonal pyramidal 210 corresponding with the position of the second hexagonal pyramidal 410, taper bottom surface
A diameter of 20nm ~ 80nm, the side of the first hexagonal pyramidal 210 are 50 ° ~ 70 ° relative to the angle of inclination beta of bottom surface.
As shown in figure 9, the spacing d1 between the first hexagonal pyramidal 210 is 100nm ~ 800nm, second hexagonal pyramidal
Spacing d2 between 410 is 100nm ~ 800nm, using etch process, on the surface of the first epitaxial layer 200 is produced
The pattern of one hexagonal pyramidal 210, meanwhile, the etching gaps between the first hexagonal pyramidal 210 are penetrated into the two or six by the etch process
Direct clearance between pyramid 410 is connected to up to bonded layer 600.
（7）As shown in Figure 10, using etching solution, bonded layer 600 and second substrate 700 are peeled off, the final length that obtains is
90nm ~ 8000nm, the miniature bar-shaped vertical LED that rod footpath is 20nm ~ 800nm.
Embodiment 2
It is as shown in fig. 7, the present embodiment is different from embodiment 1：In step（6）When, mask layer 500 uses SiO2Or
SiNxWith increased etching selectivity, the present embodiment is preferably SiO2, graphical SiO is made using light shield technique2Layer and the two or six
The position of pyramid 410 is corresponding.Using dry etching technology, it is etched in ICP inductively coupled plasma equipment and carries out.First carry out
First paragraph etches, and etches away photoresist layer and etches the SiO2 layers and epitaxial layer of certain depth, the etching gas composition of use
Including：CHF3And Ar, wherein CHF3Ratio with Ar is 3:1~20:1, ICP power is 150W ~ 170W, reaction time 5min
~10min.After having etched photoresist layer, then second segment etching is carried out, etch away SiO2 layers and epitaxial layer, the etching gas of use
For：Etching gas is Cl2And Ar, wherein Cl2Ratio with Ar is 2:1~5:1, ICP power is 150W ~ 170W, reaction
Time is 10min ~ 20min.
Continue to etch, by the SiO of mask layer 5002All etch so that the gap erosion between the first hexagonal pyramidal 210
The direct clearance being penetrated between the second hexagonal pyramidal 410 is carved to be connected to up to bonded layer 600.By the shadow of GaN base hexagonal wurtzite structure
Ring, form first hexagonal pyramidal 210 pattern corresponding with the position of the second hexagonal pyramidal 410, the present embodiment is on the basis of embodiment 1
On further increase the etch depth of epitaxial layer.
As shown in figure 11, thus finally obtain length be 90nm ~ 8000nm, rod footpath be the miniature bar-shaped of 20nm ~ 800nm
Vertical LED.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of preparation method of light emitting diode with vertical structure, including step：
1）First substrate is provided, grows light emitting epitaxial layer on the first substrate, light emitting epitaxial layer is successively comprising the first epitaxial layer, hair
Photosphere, the second epitaxial layer；
2）A plurality of second hexagonal pyramidal patterns are made in second epi-layer surface；
3）Bonded layer is deposited in second epi-layer surface, covers the second hexagonal pyramidal pattern；
4）Second epitaxial layer is bonded on second substrate；
5）The first substrate is peeled off, exposes first epitaxial layer；
6）By lithography alignment technology, with the second hexagonal pyramidal pattern opposite position in the second epitaxial layer, using etching
Technique, produces the first hexagonal pyramidal pattern in first epi-layer surface, and the etch process continues the first hexagonal
Etching gaps between taper are penetrated into the gap between the second hexagonal pyramidal, directly reach bonded layer；
7）Remove bonded layer and second substrate.
A kind of 2. preparation method of light emitting diode with vertical structure according to claim 1, it is characterised in that step 2）In
Second epi-layer surface, which is etched in, using light shield produces the second hexagonal pyramidal pattern.
3. the preparation method of a kind of light emitting diode with vertical structure according to claim 1, it is characterised in that described first
Hexagonal pyramidal adjacent spacing is 100nm ~ 800nm, and the second hexagonal pyramidal adjacent spacing is 100nm ~ 800nm.
A kind of 4. preparation method of light emitting diode with vertical structure according to claim 1, it is characterised in that step 6）System
Make to make the high graphic mask layer of etching selectivity on the first epitaxial layer for increase etching selectivity before the first hexagonal pyramidal,
Graphic mask layer material is SiO2Or SiNx。
A kind of 5. preparation method of light emitting diode with vertical structure according to claim 4, it is characterised in that step 6）Adopt
The first hexagonal pyramidal pattern is produced with etch process, etch process is by first paragraph dry etching to selecting to enter than high mask layer
Row etching and second segment dry etching composition.
6. the preparation method of a kind of light emitting diode with vertical structure according to claim 5, it is characterised in that described first
Section dry etching and second segment dry etching are in the Dry etching equipment using ICP inductive coupling plasma etchings or use
Carried out in the Dry etching equipment of RIE reactive ion etchings, the etching gas composition that first paragraph dry etching uses includes CHF3
And Ar, the etching gas composition that the second segment dry etching uses include Cl2And Ar.
A kind of 7. light emitting diode with vertical structure, successively including the first epitaxial layer, luminescent layer, the second epitaxial layer, it is characterised in that
The light emitting diode with vertical structure is club shaped structure, and the both ends of club shaped structure are hexagonal vertebra shape, and rod footpath is 20nm ~ 800nm.
8. a kind of light emitting diode with vertical structure according to claim 7, it is characterised in that wrapped in first epitaxial layer
Containing the first hexagonal pyramidal, the second hexagonal pyramidal, first hexagonal pyramidal and the described 2nd 6 are included in second epitaxial layer
The bottom surface of pyramid overlaps with two bottom surfaces of a column construction respectively.
A kind of 9. light emitting diode with vertical structure according to claim 7, it is characterised in that the length of the club shaped structure
For 90nm ~ 8000nm.
A kind of 10. light emitting diode with vertical structure according to claim 8, it is characterised in that first hexagonal pyramidal
Inclination angle with the side opposing bottom surface of the second hexagonal pyramidal is 50 ° ~ 70 °.
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| CN201610091308.0A CN105590995B (en) | 2016-02-19 | 2016-02-19 | A kind of light emitting diode with vertical structure and preparation method thereof |
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| CN105590995B true CN105590995B (en) | 2017-12-12 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109920888B (en) * | 2019-03-11 | 2022-01-25 | 北京大学 | Light emitting diode chip and manufacturing method thereof |
| CN109920887B (en) * | 2019-03-11 | 2022-01-25 | 北京大学 | Light emitting diode chip and manufacturing method thereof |
| WO2022077254A1 (en) * | 2020-10-14 | 2022-04-21 | 苏州晶湛半导体有限公司 | Manufacturing method for miniature led structure |
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| WO2005015647A1 (en) * | 2003-08-08 | 2005-02-17 | Vichel Inc. | Nitride micro light emitting diode with high brightness and method of manufacturing the same |
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