CN102832308A - Patterned substrate for preparing light emitting diode (LED) flip chip - Google Patents
Patterned substrate for preparing light emitting diode (LED) flip chip Download PDFInfo
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- CN102832308A CN102832308A CN201210342179XA CN201210342179A CN102832308A CN 102832308 A CN102832308 A CN 102832308A CN 201210342179X A CN201210342179X A CN 201210342179XA CN 201210342179 A CN201210342179 A CN 201210342179A CN 102832308 A CN102832308 A CN 102832308A
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Abstract
The invention discloses a special novel patterned substrate for preparing a light emitting diode (LED) flip chip, and the patterned substrate is characterized in that a layer or multiple layers of film materials (the refractive index of the film material is different from the refractive index (n=1.76) of sapphire, and the material can be selected but not limited to titanium oxide, zinc oxide, magnesium oxide and the like) are deposited on the surface of a plane sapphire substrate, then inductively coupled plasma (ICP) is used for dry etching a conical pattern and a cylindrical pattern, and the light emitting efficiency can be effectively improved. The novel patterned substrate is mainly used for the flip chip, the surface coating of the substrate pattern or the entire substrate are made of non-sapphire material, when photos of the flip chip pass through the coating (one layer or multiple layers), because of different refractive indexes, the full-reflection light path in the sapphire material is damaged, the light emitting possibility can be maximally improved, and the light emitting efficiency of the flip structure can be improved by more than 15 percent through the patterned substrate.
Description
Technical field
The present invention relates to be used to prepare the patterned substrate of LED flip-chip.
Background technology
Add the LED that carries on the back the rectangular cavity structure of plating for traditional upside-down mounting, because sapphire refractive index is 1.76, the refractive index of gallium nitride is 2.4; Cause photon by after sending in the SQW in the epitaxial loayer owing to refractive index is inconsistent; During through the Sapphire Substrate medium, can form reflection, the angle of emergence greater than the photon of the angle of total reflection because not sudden change of light path; Finally can only be in device inside repeatedly reflection back and forth, energy slowly decays to zero.In theory approximately only less than half the photon shooting angle less than the angle of total reflection, thereby can be from the device surface outgoing, this is to cause the light of flip-chip to take out the lower one of the main reasons of efficient.
Summary of the invention
The objective of the invention is provides a kind of patterned substrate of effective increase light emission rate to the low problem of LED flip-chip light emission rate of the prior art.
For reaching above purpose; The invention provides a kind of patterned substrate that is used to prepare the LED flip-chip, it comprises sapphire substrates, is deposited on one or more layers semiconductor material thin film of described sapphire substrates upper surface, and etching is formed with graphic array on the described semiconductor material thin film; Wherein, The refractive index of described semiconductor material thin film is between the refractive index of the refractive index of Sapphire Substrate and GaN material, and graph substrate of the present invention is to utilize the preparation of ICP etching technics, and described novel graph substrate is primarily aimed at the LED flip-chip; Cooperate back of the body depositing process, can greatly promote light emission rate.
Substrate of the present invention is based on the plane sapphire substrate; Utilize magnetron sputtering technique at one or more layers thin-film material of its surface deposition; Like materials such as titanium oxide, zinc oxide, silicon dioxide, this which floor thin-film material can be the ABAB superlattice structure of two kinds of range upon range of formations in material space, also can be the structure that the ABCD of the mutual range upon range of setting of different materials is superimposed; The refractive index of different materials is between the refractive index of the refractive index of Sapphire Substrate and GaN material; Be between 1.67 to 2.4, the thickness of adjustment multi-layer thin rete and material different can be destroyed the full emission probability of photon to the full extent.
As the further prioritization scheme of this patent, the gross thickness of described one or more layers semiconductor film material is no more than 1000 nm, and less than the degree of depth of etching.
As the further prioritization scheme of this patent, the gross thickness of described one or more layers semiconductor film material is 100 nm～600 nm.
As the further prioritization scheme of this patent, described semi-conducting material comprises titanium oxide, zinc oxide, silicon dioxide, magnesia.
As the further prioritization scheme of this patent, etching is formed with the graphic array of taper or cylindricality on the described semiconductor material thin film.The figure of this substrate is taper or column, and the taper figure is of a size of, height 1～3 um; Diameter 1～5 um; Spacing 0.2～1um; The size of column figure, height 1～2.5 um, cylindricality base diameter 1～5 um; Spacing 0.3～0.4 um.
Owing to adopted above technical scheme, the present invention utilizes ICP to etch graphic array through inserting the single or multiple lift thin-film material again, can realize that flip-chip light takes out the purpose of improved efficiency.Through the thin-film material on simple increase plain film Sapphire Substrate surface, utilize existing ICP etching technics, need not to increase in addition any controlled collapsible chip connec-tion, compatible fully with existing chip technology.The present invention has destroyed the total reflection light path of photon in sapphire material through the novel graph substrate technology of preparation, can increase to the full extent more than light extraction efficiency 15 %.
Description of drawings
Fig. 1 is the sketch map according to taper graph substrate of the present invention, thin-film materials such as its surface coverage one deck titanium oxide, zinc oxide, silica;
Fig. 2 is the cross-sectional view of Fig. 1, and it has showed taper graph substrate cross section profile;
Fig. 3 is the sketch map according to column graph substrate of the present invention, and its alumina surface has the different refractivity material to be formed by stacking;
Fig. 4 is the cross-sectional view of Fig. 3, and it has showed cylindricality figure substrate cross-section profile.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present invention is set forth in detail, thereby protection scope of the present invention is made more explicit defining so that advantage of the present invention and characteristic can be easier to it will be appreciated by those skilled in the art that.
Shown in accompanying drawing 1 to accompanying drawing 4; A kind of patterned substrate that is used to prepare the LED flip-chip, it comprises sapphire substrates, is deposited on one or more layers semiconductor material thin film of sapphire substrates upper surface, and etching is formed with graphic array on the semiconductor material thin film; Wherein, The refractive index of semiconductor material thin film is between the refractive index of the refractive index of Sapphire Substrate and GaN material, and graph substrate of the present invention is to utilize the preparation of ICP etching technics, and novel graph substrate is primarily aimed at the LED flip-chip; Cooperate back of the body depositing process, can greatly promote light emission rate.
Substrate of the present invention is based on the plane sapphire substrate; Utilize magnetron sputtering technique at one or more layers thin-film material of its surface deposition; Like materials such as titanium oxide, zinc oxide, silicon dioxide, magnesia, this which floor thin-film material can be the ABAB superlattice structure of two kinds of range upon range of formations in material space, also can be the structure that the ABCD of the mutual range upon range of setting of different materials is superimposed; The refractive index of different materials is between the refractive index of the refractive index of Sapphire Substrate and GaN material; Be between 1.67 to 2.4, the thickness of adjustment multi-layer thin rete and material different can be destroyed the full emission probability of photon to the full extent.The gross thickness of above-mentioned one or more layers semiconductor film material is no more than 1000 nm, and less than the degree of depth of etching.In other real-time mode, its gross thickness is 100 nm～600 nm.
On the Sapphire Substrate that has deposited distribution Bragg reflector DBR, through mask plate, through ICP dry etching taper as shown in the figure (Fig. 1,2) or column (Fig. 3,4) figure, the taper figure is of a size of height 1～3 um; Diameter 1～5 um; Spacing 0.2～1um; The column figure is of a size of, height 1～2.5 um, cylindricality base diameter 1～5 um; Spacing 0.3～0.4 um.This kind substrate is primarily aimed at flip-chip, can effectively promote photon outgoing efficient.At the novel graph substrate growing epitaxial layers of this invention, preparation inverted structure chip.
Owing to adopted above technical scheme, the present invention utilizes ICP to etch graphic array through inserting the single or multiple lift thin-film material again, can realize that flip-chip light takes out the purpose of improved efficiency.Through the thin-film material on simple increase plain film Sapphire Substrate surface, utilize existing ICP etching technics, need not to increase in addition any controlled collapsible chip connec-tion, compatible fully with existing chip technology.The present invention has destroyed the total reflection light path of photon in sapphire material through the novel graph substrate technology of preparation, can increase to the full extent more than light extraction efficiency 15 %.
Above execution mode only is explanation technical conceive of the present invention and characteristics; Its purpose is to let the people that is familiar with this technology understand content of the present invention and implements; Can not limit protection scope of the present invention with this, all equivalences that spirit is done according to the present invention change or modification all is encompassed in protection scope of the present invention.
Claims (9)
1. patterned substrate that is used to prepare the LED flip-chip; It is characterized in that: it comprises sapphire substrates, is deposited on one or more layers semiconductor material thin film of described sapphire substrates upper surface; Etching is formed with graphic array on the described semiconductor material thin film; Wherein, the refractive index of described semiconductor material thin film is between the refractive index of the refractive index of Sapphire Substrate and GaN material.
2. the patterned substrate that is used to prepare the LED flip-chip according to claim 1 is characterized in that: described sapphire substrates upper surface deposits the multi-lager semiconductor material film, the mutual range upon range of setting of described multi-lager semiconductor material film.
3. the patterned substrate that is used to prepare the LED flip-chip according to claim 2; It is characterized in that: described sapphire substrates upper surface deposits the multi-lager semiconductor material film, and described multi-lager semiconductor material film is by two kinds of range upon range of superlattice structures that constitute in semi-conducting material space.
4. the patterned substrate that is used to prepare the LED flip-chip according to claim 1 is characterized in that: the gross thickness of described one or more layers semiconductor film material is no more than 1000 nm, and less than the degree of depth of etching.
5. the patterned substrate that is used to prepare the LED flip-chip according to claim 4 is characterized in that: the gross thickness of described one or more layers semiconductor film material is 100 nm～600 nm.
6. the patterned substrate that is used to prepare the LED flip-chip according to claim 1 is characterized in that: described semi-conducting material comprises titanium oxide, zinc oxide, silicon dioxide, magnesia.
7. the patterned substrate that is used to prepare the LED flip-chip according to claim 1 is characterized in that: etching is formed with the graphic array of taper or cylindricality on the described semiconductor material thin film.
8. the patterned substrate that is used to prepare the LED flip-chip according to claim 7 is characterized in that: described taper graphic array is of a size of height 1～3 um, diameter 1～5 um, spacing 0.2～1um.
9. the patterned substrate that is used to prepare the LED flip-chip according to claim 7 is characterized in that: described cylindricality graphic array is of a size of height 1～2.5 um, cylindricality base diameter 1～5 um, spacing 0.3～0.4 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210342179XA CN102832308A (en) | 2012-09-17 | 2012-09-17 | Patterned substrate for preparing light emitting diode (LED) flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210342179XA CN102832308A (en) | 2012-09-17 | 2012-09-17 | Patterned substrate for preparing light emitting diode (LED) flip chip |
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| CN102832308A true CN102832308A (en) | 2012-12-19 |
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| CN201210342179XA Pending CN102832308A (en) | 2012-09-17 | 2012-09-17 | Patterned substrate for preparing light emitting diode (LED) flip chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598232A (en) * | 2018-01-19 | 2018-09-28 | 浙江大学 | A kind of sapphire pattern substrate structure improving GaN base LED luminous efficiencies |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080121903A1 (en) * | 2006-11-24 | 2008-05-29 | Sony Corporation | Method for manufacturing light-emitting diode, light-emitting diode, lightsource cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, and electronic apparatus |
| CN101796661A (en) * | 2007-09-06 | 2010-08-04 | Lg伊诺特有限公司 | Semiconductor light emitting device and method of fabricating the same |
| JP2011066073A (en) * | 2009-09-15 | 2011-03-31 | Showa Denko Kk | Semiconductor light-emitting element |
| CN202957284U (en) * | 2012-09-17 | 2013-05-29 | 聚灿光电科技(苏州)有限公司 | Patterned substrate used to prepare LED flip chip |
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2012
- 2012-09-17 CN CN201210342179XA patent/CN102832308A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080121903A1 (en) * | 2006-11-24 | 2008-05-29 | Sony Corporation | Method for manufacturing light-emitting diode, light-emitting diode, lightsource cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, and electronic apparatus |
| CN101796661A (en) * | 2007-09-06 | 2010-08-04 | Lg伊诺特有限公司 | Semiconductor light emitting device and method of fabricating the same |
| JP2011066073A (en) * | 2009-09-15 | 2011-03-31 | Showa Denko Kk | Semiconductor light-emitting element |
| CN202957284U (en) * | 2012-09-17 | 2013-05-29 | 聚灿光电科技(苏州)有限公司 | Patterned substrate used to prepare LED flip chip |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598232A (en) * | 2018-01-19 | 2018-09-28 | 浙江大学 | A kind of sapphire pattern substrate structure improving GaN base LED luminous efficiencies |
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Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant before: Focus Lightings Tech Inc. |
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Application publication date: 20121219 |