CN202957282U - Sapphire LED patterned substrate - Google Patents
Sapphire LED patterned substrate Download PDFInfo
- Publication number
- CN202957282U CN202957282U CN201220470651.3U CN201220470651U CN202957282U CN 202957282 U CN202957282 U CN 202957282U CN 201220470651 U CN201220470651 U CN 201220470651U CN 202957282 U CN202957282 U CN 202957282U
- Authority
- CN
- China
- Prior art keywords
- sapphire
- bragg reflector
- layer
- distribution bragg
- dbr layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model discloses a sapphire LED patterned substrate and a method of manufacturing the same. The sapphire LED patterned substrate is characterized in that various patterned structures are prepared by employing an ICP dry etching technology on the basis of depositing a distributed bragg reflector (DBR) layer on the surface of a sapphire plain film substrate. The sapphire LED patterned substrate of the utility model is actually a novel patterned substrate formed by depositing the DBR layer on the sapphire substrate in advance, has more obvious advantages by being compared with a conventional back plated DBR, enables not only the light extraction efficiency to be improved effectively, but also the transverse growth mode of an epitaxial layer to be optimized and the crystal lattice quality of an epitaxial material to be improved, and has a very practical commercial value.
Description
Technical field
The utility model relates to a kind of sapphire LED graph substrate.
Background technology
For traditional sapphire LED graph substrate, in epitaxial process, in the bag sidewall crystallization of PSS substrate, the epitaxial material in each crystal orientation of growing has reduced the lattice quality of epitaxial loayer, thereby has increased defect concentration, badly influences the internal quantum efficiency of LED easily; And traditional DBR layer evaporation increased technological process and the complexity of chip section at chip back.
Summary of the invention
The purpose of this utility model is for the slightly low problem of led chip light emission rate in the existing DBR back of the body coating technology, and a kind of New Graphics substrate that more has more light is provided.
For reaching above purpose, the utility model provides a kind of sapphire LED graph substrate, comprise Sapphire Substrate, be deposited on distribution Bragg reflector DBR layer on the described Sapphire Substrate, be deposited on the GaN layer of described distribution Bragg reflector DBR layer top, described distribution Bragg reflector DBR layer is made of the film of multilayer periodic structure and etching is formed with the column graphic array, and described graphic array is exposed to the upper surface of described GaN layer.Because the electromagnetic wave that frequency drops in the energy gap scope can't penetrate, the reflectivity of this DBR can reach more than 99%.It does not have the absorption problem of metallic mirror, can see through the refractive index or the thickness that change material and adjust the energy gap position, and covering the reverberation scope is most visible lights.
As further prioritization scheme, centered by the optical thickness of every layer film of described distribution Bragg reflector DBR layer 1/4 of reflection wavelength.
As further prioritization scheme, the periodicity of described distribution Bragg reflector DBR layer is between 5 to 7, can arrive more than 99.5% LED emissivity maximum.
As further prioritization scheme, described distribution Bragg reflector DBR layer consists of by two kinds of semi-conducting material spaces are stacked, adjust the refractive index difference of bi-material and thicknesses of layers take cover wave-length coverage as 380 nm to 700 nm.
As further prioritization scheme, described distribution Bragg reflector DBR layer comprises SiO
2/ TiO
2Structure or SiO
2/ MgO structure.
As further prioritization scheme, described column graphic array comprises triangular prism, quadrangular, six prisms, it is pointed out that the utility model is including, but not limited to above-mentioned figure, different graphic cooperates different epitaxy techniques, can reach the to the full extent purpose of light extraction efficiency.
As further prioritization scheme, the interstice coverage of described column graphic array is 0.2～0.4 um, and the figure height is 1.4～1.6 um.
Compare with existing led chip back of the body plating DBR technology, sapphire LED graph substrate of the present utility model is actually the novel graphic substrate that deposits in advance the DBR reflector on Sapphire Substrate, compare tradition back of the body plating DBR more significantly advantage is arranged, can not only take out efficient by Effective Raise light, and can optimize the cross growth mode of epitaxial loayer, improve the lattice quality of epitaxial material, have very practical commercial value.The simple present position that changes the DBR layer need not to increase in addition any chip technology, and is fully compatible with existing chip technology.
Description of drawings
Fig. 1 is the cross-sectional view according to sapphire LED graph substrate of the present utility model;
Fig. 2 is the schematic diagram according to the embodiment one of sapphire LED graph substrate of the present utility model;
Fig. 3 is the schematic diagram according to the embodiment two of sapphire LED graph substrate of the present utility model;
Fig. 4 is the schematic diagram according to the embodiment three of sapphire LED graph substrate of the present utility model.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present utility model is described in detail, thereby so that advantage of the present utility model and feature can be easier to be it will be appreciated by those skilled in the art that protection range of the present utility model is made more explicit defining.
Referring to accompanying drawing 1 to shown in the accompanying drawing 4, a kind of sapphire LED graph substrate, comprise Sapphire Substrate, be deposited on distribution Bragg reflector DBR layer on the Sapphire Substrate, be deposited on the GaN layer of distribution Bragg reflector DBR layer top, centered by the optical thickness of every layer film of distribution Bragg reflector DBR layer 1/4 of reflection wavelength, periodicity is between 5 to 7, can arrive more than 99.5% LED emissivity maximum.
Distribution Bragg reflector DBR layer is made of the film of multilayer periodic structure and etching is formed with the column graphic array, and graphic array is exposed to the upper surface of GaN layer.Because the electromagnetic wave that frequency drops in the energy gap scope can't penetrate, the reflectivity of this DBR can reach more than 99%.It does not have the absorption problem of metallic mirror, can see through the refractive index or the thickness that change material and adjust the energy gap position, and covering the reverberation scope is most visible lights.
Depositing DBR on plain film Sapphire Substrate surface, can be to consist of by two kinds of semi-conducting material spaces are stacked, and material is SiO
2/ TiO
2Or SiO
2The periodic structure film of/MgO is SiO by adjusting material
2/ TiO
2Or SiO
2Refractive index difference and the thickness of/MgO (waiting other collocation) bi-material, covering wave-length coverage is 380 nm are to 700 nm.
Referring to accompanying drawing 2, accompanying drawing 3, accompanying drawing 4, the column graphic array comprises triangular prism, quadrangular, six prisms, it is pointed out that the utility model is including, but not limited to above-mentioned figure, different graphic cooperates different epitaxy techniques, can reach the to the full extent purpose of light extraction efficiency.The interstice coverage of column graphic array is 0.2～0.4 um, and the figure height is 1.4～1.6 um.
The preparation method of above-mentioned sapphire LED graph substrate may further comprise the steps:
A) design and produce the photolithography plate with above-mentioned substrate graphic structure;
B) deposition distribution Bragg mirror DBR layer on plain film Sapphire Substrate surface;
C) photoetching: apply photoresist layer, baking, exposure, development, rear baking at distribution Bragg reflector DBR layer successively, the graphic array of photolithography plate is transferred on the photoresist layer;
D) adopt the ICP dry etching technology that the Sapphire Substrate with graphical photoresist coating is carried out etching, graphic array is transferred to the rear photoresist coating of removing on the Sapphire Substrate;
E) deposit successively GaN layer and follow-up epitaxial loayer, and graphic array is exposed to the upper surface of GaN layer.
It should be noted that, distribution Bragg reflector DBR layer adopts the E-Beam evaporation process, when distribution Bragg reflector DBR layer is made of the SiO2/TiO2 structure, employing pressure in oxygen atmosphere is that 1.3 * 10-4Torr, temperature are 310 ℃ evaporation condition, but this technique is not limited only to the preparation of this kind DBR material.
Utilize the New Graphics substrate of the utility model preparation to come grown epitaxial layer, can optimize the cross growth mode of epitaxial loayer, improve lattice quality.Then only need to adopt the common chip manufacturing process to get final product, reduced the chip technology flow process, in addition, directly touch the DBR figure under this chip epitaxial loayer, compare traditional DBR back of the body and be coated with more and can take out efficient by Effective Raise light.
Above execution mode only is explanation technical conceive of the present utility model and characteristics; its purpose is to allow the people that is familiar with technique understand content of the present utility model and is implemented; can not limit protection range of the present utility model with this, all equivalences of doing according to the utility model Spirit Essence change or modification all is encompassed in the protection range of the present utility model.
Claims (7)
1. sapphire LED graph substrate, it is characterized in that: comprise Sapphire Substrate, be deposited on distribution Bragg reflector DBR layer on the described Sapphire Substrate, be deposited on the GaN layer of described distribution Bragg reflector DBR layer top, described distribution Bragg reflector DBR layer is made of the film of multilayer periodic structure and etching is formed with the column graphic array, and described graphic array is exposed to the upper surface of described GaN layer.
2. sapphire LED graph substrate according to claim 1 is characterized in that: centered by the optical thickness of every layer film of described distribution Bragg reflector DBR layer 1/4 of reflection wavelength.
3. sapphire LED graph substrate according to claim 1, it is characterized in that: the periodicity of described distribution Bragg reflector DBR layer is between 5 to 7.
4. sapphire LED graph substrate according to claim 1, it is characterized in that: described distribution Bragg reflector DBR layer consists of by two kinds of semi-conducting material spaces are stacked, adjust the refractive index difference of bi-material and thicknesses of layers take cover wave-length coverage as 380 nm to 700 nm.
5. sapphire LED graph substrate according to claim 4, it is characterized in that: described distribution Bragg reflector DBR layer comprises SiO
2/ TiO
2Structure or SiO
2/ MgO structure.
6. sapphire LED graph substrate according to claim 1, it is characterized in that: described column graphic array comprises triangular prism, quadrangular, six prisms.
7. sapphire LED graph substrate according to claim 6, it is characterized in that: the interstice coverage of described column graphic array is 0.2～0.4 um, the figure height is 1.4～1.6 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220470651.3U CN202957282U (en) | 2012-09-17 | 2012-09-17 | Sapphire LED patterned substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220470651.3U CN202957282U (en) | 2012-09-17 | 2012-09-17 | Sapphire LED patterned substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202957282U true CN202957282U (en) | 2013-05-29 |
Family
ID=48462838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220470651.3U Expired - Lifetime CN202957282U (en) | 2012-09-17 | 2012-09-17 | Sapphire LED patterned substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202957282U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881791A (en) * | 2012-09-17 | 2013-01-16 | 聚灿光电科技(苏州)有限公司 | Sapphire light-emitting diode (LED) patterned substrate and preparation method thereof |
| CN111326537A (en) * | 2020-02-18 | 2020-06-23 | Tcl华星光电技术有限公司 | MiniLED backlight structure and display device |
| CN112201734A (en) * | 2020-09-15 | 2021-01-08 | 泉州三安半导体科技有限公司 | Composite pattern substrate and manufacturing method thereof, and LED structure and manufacturing method thereof |
-
2012
- 2012-09-17 CN CN201220470651.3U patent/CN202957282U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881791A (en) * | 2012-09-17 | 2013-01-16 | 聚灿光电科技(苏州)有限公司 | Sapphire light-emitting diode (LED) patterned substrate and preparation method thereof |
| CN111326537A (en) * | 2020-02-18 | 2020-06-23 | Tcl华星光电技术有限公司 | MiniLED backlight structure and display device |
| CN112201734A (en) * | 2020-09-15 | 2021-01-08 | 泉州三安半导体科技有限公司 | Composite pattern substrate and manufacturing method thereof, and LED structure and manufacturing method thereof |
| CN112201734B (en) * | 2020-09-15 | 2021-11-05 | 泉州三安半导体科技有限公司 | Composite pattern substrate and manufacturing method thereof, and LED structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102881791A (en) | Sapphire light-emitting diode (LED) patterned substrate and preparation method thereof | |
| CN105957928B (en) | A kind of resonator light emitting diode and its manufacturing method | |
| CN107195747A (en) | A kind of micron-scale flip LED chips and preparation method thereof | |
| WO2010095531A1 (en) | Semiconductor light emitting diode | |
| CN202957282U (en) | Sapphire LED patterned substrate | |
| CN109509822B (en) | Light-emitting diode with light scattering structure and ODR (optical distribution R) and preparation method thereof | |
| KR20230039726A (en) | Patterned substrate, light emitting diode and manufacturing method | |
| CN103390711B (en) | A kind of LED chip with electrode reflecting layer and preparation method thereof | |
| CN101442090B (en) | Light emitting diode and manufacturing method thereof | |
| CN108336200A (en) | LED chip structure and preparation method thereof | |
| CN101789475A (en) | Photonic crystal light-emitting diode and manufacturing method thereof | |
| CN109768138A (en) | A kind of light-emitting diode chip for backlight unit and preparation method thereof | |
| CN103199164B (en) | A kind of have ultraviolet light-emitting diode of DBR high reverse--bias structure and preparation method thereof | |
| CN202957284U (en) | Patterned substrate used to prepare LED flip chip | |
| WO2017161936A1 (en) | Semiconductor epitaxial wafer and manufacturing method thereof | |
| CN102263181B (en) | Substrate, light-emitting diode (LED) epitaxial wafer with substrate, chip and luminous device | |
| CN108346718A (en) | Utilize the compound pattern substrate and preparation method thereof that low-index material is medium | |
| CN112820806B (en) | Patterned substrate and manufacturing method thereof, and LED structure and manufacturing method thereof | |
| US8158998B2 (en) | High-reflectivity and low-defect density LED structure | |
| CN205595365U (en) | Nitride -based emitting diode chip with surperficial anti -reflection layer | |
| CN108269896A (en) | The sapphire pattern substrate and preparation method that a kind of laser ablation dislocation hemisphere is combined with ODR | |
| CN204332999U (en) | A kind of light-emitting diode with reflecting wall | |
| CN103730546B (en) | A kind of LED structure of highlight extract efficiency and preparation method thereof | |
| WO2017107181A1 (en) | Anti-reflection film and preparation method therefor | |
| CN103227254B (en) | LED photonic crystal containing left-handed material and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: FOCUS LIGHINGS TECHNOLOGY CO., LTD. Free format text: FORMER NAME: FOCUS LIGHTING (SUZHOU) CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Patentee after: FOCUS LIGHTINGS TECH Co.,Ltd. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Patentee before: Focus Lightings Tech Inc. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20130529 |
|
| CX01 | Expiry of patent term |