CN111326537A - MiniLED backlight structure and display device - Google Patents
MiniLED backlight structure and display device Download PDFInfo
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- CN111326537A CN111326537A CN202010099435.1A CN202010099435A CN111326537A CN 111326537 A CN111326537 A CN 111326537A CN 202010099435 A CN202010099435 A CN 202010099435A CN 111326537 A CN111326537 A CN 111326537A
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- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 238000001579 optical reflectometry Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Planar Illumination Modules (AREA)
Abstract
The application provides a MiniLED backlight structure and a display device. MiniLED backlight structure includes: an array substrate; the distributed Bragg reflector layer is arranged on the array substrate and comprises a plurality of first reflecting film layers and a plurality of second reflecting film layers which are alternately overlapped, and the refractive index of the first reflecting film layers is greater than that of the second reflecting film layers; the distributed Bragg reflector layer is provided with a plurality of mounting holes penetrating through the array substrate; the LED light-emitting units are arranged on the array substrate and positioned in the mounting holes. The light reflectivity of the LED emergent to the substrate can be improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a MiniLED backlight structure and a display device.
Background
The LED, known as Light Emitting Diode, is considered to be a powerful representative of the next generation display technology due to its advantages of wide color gamut, low power consumption, stability, etc. For display purposes, the LED size must be small to achieve high resolution. Currently, the mass production of the micro led is not yet possible due to the problems of the mass transfer difficulty and the like. MiniLED comes from the birth, and MiniLED is used as backlight and realizes dynamic Local dimming through array driving, also called Local dimming technology, thereby realizing high contrast of LCD screen and greatly improving image quality. The MiniLED backlight has the advantages of high brightness, low power consumption, etc., and in order to improve the light utilization efficiency of the LED, light emitted from the LED and light reflected by the Panel need to be reflected back into the LCD. At present, the reflection function is realized mainly by sticking a reflection film on an LED substrate, but the cost of the reflection film is high, the reflection film cannot be finished in a panel factory, and the reflection film needs to be commissioned for replacing work and has long turnover time.
Therefore, the prior art has defects and needs to be improved urgently.
Disclosure of Invention
An object of the embodiment of the application is to provide a MiniLED backlight structure and a display device, which utilize the conventional chemical vapor deposition process of a panel factory to complete the manufacture of a reflective film, thereby greatly reducing the cost and the production period of products, and improving the light reflectivity of an LED emitted to a panel.
In a first aspect, an embodiment of the present application provides a MiniLED backlight structure, including:
an array substrate;
the distributed Bragg reflector layer comprises a plurality of first reflecting film layers and a plurality of second reflecting film layers which are alternately stacked, wherein the refractive index of the first reflecting film layers is greater than that of the second reflecting film layers; the distributed Bragg reflector layer is provided with a plurality of mounting holes penetrating through the array substrate;
the LED light-emitting units are arranged on the array substrate and positioned in the mounting holes.
Optionally, in the MiniLED backlight structure according to this embodiment of the application, a refractive index of the first reflective film layer ranges from 1.7 to 2.2.
Optionally, in the MiniLED backlight structure according to this embodiment of the application, a refractive index of the second reflective film layer ranges from 1.35 to 1.55.
Optionally, in the MiniLED backlight structure according to an embodiment of the present application, a material of the first reflective film layer is SiNx or Al2O 3.
Optionally, in the MiniLED backlight structure according to this embodiment of the application, a refractive index of the first reflective film layer is 1.96.
Optionally, in the MiniLED backlight structure according to this embodiment of the application, the material of the second reflective film layer is SiO2 or MgF 2.
Optionally, in the MiniLED backlight structure according to this embodiment of the application, a refractive index of the second reflective film layer is 1.47.
Optionally, in the MiniLED backlight structure according to an embodiment of the present disclosure, the number of layers of the first reflective film layer and the second reflective film layer is equal to each other and is greater than 9, and a layer closest to the array substrate is the first reflective film layer.
Optionally, in the MiniLED backlight structure according to an embodiment of the present application, the number of layers of the first reflective film layer and the second reflective film layer is 16, and the film thicknesses for interference enhancement of the red, green, and blue central wavelengths are respectively set for every 4 layers of the first reflective film layer and the second reflective film layer, so as to implement reflection of white light.
In a second aspect, an embodiment of the present application further provides a display device, including any of the MiniLED backlight structures described above.
As can be seen from the above, the distributed bragg reflector layer is adopted in the embodiment of the present application, and includes a plurality of first reflective film layers and a plurality of second reflective film layers that are alternately stacked, and the refractive index of the first reflective film layers is greater than the refractive index of the second reflective film layers, so that the light reflectivity of the LED to the substrate can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a flowchart of a method for manufacturing a MiniLED backlight structure according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a MiniLED backlight structure according to an embodiment of the present disclosure;
fig. 3 is another schematic structural diagram of a MiniLED backlight structure according to an embodiment of the present disclosure;
fig. 4 is a graph illustrating the reflectivity of the distributed bragg reflector layer of the MiniLED backlight structure according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. In the present invention, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc. refer to directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
Fig. 1 is a flowchart of a method for manufacturing a MiniLED backlight structure according to an embodiment of the present disclosure. The manufacturing method of the MiniLED backlight structure comprises the following steps:
s101, providing an array substrate.
S102, arranging a distributed Bragg reflector layer on the array substrate, wherein the distributed Bragg reflector layer comprises a plurality of first reflecting film layers and a plurality of second reflecting film layers which are alternately overlapped, and the refractive index of the first reflecting film layers is larger than that of the second reflecting film layers; the distributed Bragg reflector layer is provided with a plurality of mounting holes penetrating through the array substrate.
S103, arranging a plurality of LED light-emitting units on the array substrate, wherein the plurality of LED light-emitting units are positioned in the mounting holes, and one LED light-emitting unit is correspondingly mounted in each mounting hole.
The steps of the method are described in detail below with reference to fig. 2.
In step S101, the array substrate 10 is similar to a conventional array substrate and can be manufactured by the same manufacturing method, where the array substrate 10 includes a gate metal layer, a first insulating layer, a source/drain metal layer, and a second insulating layer.
In step S102, the first reflective film 21 and the second reflective film 22 can be deposited by magnetron sputtering or chemical vapor deposition (cvd), in this case, plasma enhanced vapor deposition (PECVD) is used to alternately deposit the first reflective film 21 and the second reflective film 22.
In some embodiments, the refractive index of the first reflective film layer 21 ranges from 1.7 to 2.2. The refractive index of the second reflective film layer 22 ranges from 1.35 to 1.55. The first reflective film layer 21 is made of SiNx or Al2O 3. Preferably, the refractive index of the first reflective film layer 21 is 1.96.
In some embodiments, the material of the second reflective film layer 22 is SiO2 or MgF 2. The refractive index of the second reflective film layer 22 is 1.47.
In some embodiments, the number of the first reflective film layer 21 and the second reflective film layer 22 is equal to each other and is greater than 9, and the layer closest to the array substrate 10 is the first reflective film layer 21.
As shown in fig. 3, the number of the first reflective film layer and the second reflective film layer is 16, and the film thicknesses for enhancing the interference of the central wavelengths of red, green and blue are respectively set for every 4 first reflective film layers 21 and second reflective film layers 22, so as to realize the reflection of white light. Wherein, the film thickness of the first reflecting film layer 21 arranged in the first 4 periods is 50-65nm, preferably 57 nm; the second reflective film layer 22 has a film thickness of 70 to 85nm, preferably 77 nm. The second 4-period set film thickness of the first reflection film layer 21 is 60 to 80nm, preferably 71nm, and the second reflection film layer 22 is 85 to 105nm, preferably 94 nm. The third 4 periods set the film thickness of the first reflection film layer 21 to be 75-95nm, preferably 85nm, and the film thickness of the second reflection film layer 22 to be 105-120nm, preferably 102 nm; the fourth 4-period setting film thickness of the first reflection film layer 21 is 90-105nm, preferably 98nm, and the film thickness of the second reflection film layer 22 is 120-140nm, preferably 130 nm.
The reflectivity of the distributed bragg reflector layer of the MiniLED backlight structure manufactured in this embodiment is as shown in fig. 4, and as can be seen from the figure, the reflectivity is higher in the entire visible light range, and is close to 90%. The LED connecting area is exposed through a photoetching process, etching can be carried out through dry etching, and then the LED light-emitting units are transferred to the array substrate, so that the MiniLED backlight structure can be manufactured.
As can be seen from the above, the distributed bragg reflector layer is adopted in the embodiment of the present application, and includes a plurality of first reflective film layers and a plurality of second reflective film layers that are alternately stacked, and the refractive index of the first reflective film layers is greater than the refractive index of the second reflective film layers, so that the light reflectivity of the LED to the substrate can be improved.
With reference to fig. 2 to fig. 3, an embodiment of the present application further provides a MiniLED backlight structure, including: an array substrate 10, a distributed bragg reflector layer 20 and a plurality of LED light emitting units.
The array substrate 10 is similar to a conventional array substrate, and can be manufactured by the same manufacturing method, and the array substrate 10 includes a gate metal layer, a first insulating layer, a source/drain metal layer, and a second insulating layer.
The first reflective film 21 and the second reflective film 22 can be deposited by magnetron sputtering or chemical vapor deposition, in this case plasma enhanced vapor deposition (PECVD) is used to alternately deposit the first reflective film 21 and the second reflective film 22.
In some embodiments, the refractive index of the first reflective film layer 21 ranges from 1.7 to 2.2. The refractive index of the second reflective film layer 22 ranges from 1.35 to 1.55. The first reflective film layer 21 is made of SiNx or Al2O 3. Preferably, the refractive index of the first reflective film layer 21 is 1.96.
In some embodiments, the material of the second reflective film layer 22 is SiO2 or MgF 2. The refractive index of the second reflective film layer 22 is 1.47.
In some embodiments, the number of the first reflective film layer 21 and the second reflective film layer 22 is equal to each other and is greater than 9, and the layer closest to the array substrate 10 is the first reflective film layer 21.
As shown in fig. 3, the number of the first reflective film layer and the second reflective film layer is 16, and the film thicknesses for enhancing the interference of the central wavelengths of red, green and blue are respectively set for every 4 first reflective film layers 21 and second reflective film layers 22, so as to realize the reflection of white light. Wherein, the film thickness of the first reflecting film layer 21 arranged in the first 4 periods is 50-65nm, preferably 57 nm; the second reflective film layer 22 has a film thickness of 70 to 85nm, preferably 77 nm. The second 4-period set film thickness of the first reflection film layer 21 is 60 to 80nm, preferably 71nm, and the second reflection film layer 22 is 85 to 105nm, preferably 94 nm. The third 4 periods set the film thickness of the first reflection film layer 21 to be 75-95nm, preferably 85nm, and the film thickness of the second reflection film layer 22 to be 105-120nm, preferably 102 nm; the fourth 4-period setting film thickness of the first reflection film layer 21 is 90-105nm, preferably 98nm, and the film thickness of the second reflection film layer 22 is 120-140nm, preferably 130 nm.
The reflectivity of the distributed bragg reflector layer of the MiniLED backlight structure manufactured in this embodiment is as shown in fig. 4, and as can be seen from the figure, the reflectivity is higher in the entire visible light range, and is close to 90%. The LED connecting area is exposed through a photoetching process, etching can be carried out through dry etching, and then the LED light-emitting units are transferred to the array substrate, so that the MiniLED backlight structure can be manufactured.
The embodiment of the application also provides a display device, which comprises the MiniLED backlight structure in any embodiment.
As can be seen from the above, the distributed bragg reflector layer is adopted in the embodiment of the present application, and includes a plurality of first reflective film layers and a plurality of second reflective film layers that are alternately stacked, and the refractive index of the first reflective film layers is greater than the refractive index of the second reflective film layers, so that the light reflectivity of the LED to the substrate can be improved.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A MiniLED backlight structure, comprising:
an array substrate;
the distributed Bragg reflector layer is arranged on the array substrate and comprises a plurality of first reflecting film layers and a plurality of second reflecting film layers which are alternately overlapped, and the refractive index of the first reflecting film layers is greater than that of the second reflecting film layers; the distributed Bragg reflector layer is provided with a plurality of mounting holes penetrating through the array substrate;
the LED light-emitting units are arranged on the array substrate and positioned in the mounting holes.
2. The MiniLED backlight structure of claim 1, wherein the refractive index of the first reflective film layer is in the range of 1.7-2.2.
3. The MiniLED backlight structure of claim 1, wherein the refractive index of the second reflective film layer is in the range of 1.35-1.55.
4. The MiniLED backlight structure of claim 1, wherein the first reflective film layer is made of SiNx or Al2O 3.
5. The MiniLED backlight structure of claim 4, wherein the refractive index of the first reflective film layer is 1.96.
6. The MiniLED backlight structure of claim 1, wherein the second reflective film layer is made of SiO2 or MgF 2.
7. The MiniLED backlight structure of claim 6, wherein the refractive index of the second reflective film layer is 1.47.
8. The MiniLED backlight structure of claim 1, wherein the first and second reflective film layers have the same number of layers and are both greater than 9, and the layer closest to the array substrate is the first reflective film layer.
9. The MiniLED backlight structure of claim 8, wherein the number of the first reflective film layer and the second reflective film layer is 16, and the film thickness for enhancing the interference of the red, green and blue central wavelengths is respectively set for every 4 first reflective film layers and second reflective film layers, so as to realize the reflection of white light.
10. A display device comprising the MiniLED backlight structure of any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010099435.1A CN111326537A (en) | 2020-02-18 | 2020-02-18 | MiniLED backlight structure and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010099435.1A CN111326537A (en) | 2020-02-18 | 2020-02-18 | MiniLED backlight structure and display device |
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| CN111326537A true CN111326537A (en) | 2020-06-23 |
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| CN202010099435.1A Pending CN111326537A (en) | 2020-02-18 | 2020-02-18 | MiniLED backlight structure and display device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN202957282U (en) * | 2012-09-17 | 2013-05-29 | 聚灿光电科技(苏州)有限公司 | Sapphire LED patterned substrate |
| CN110416245A (en) * | 2019-07-31 | 2019-11-05 | 云谷（固安）科技有限公司 | A kind of production method of display panel, display device and display panel |
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2020
- 2020-02-18 CN CN202010099435.1A patent/CN111326537A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN202957282U (en) * | 2012-09-17 | 2013-05-29 | 聚灿光电科技(苏州)有限公司 | Sapphire LED patterned substrate |
| CN110416245A (en) * | 2019-07-31 | 2019-11-05 | 云谷（固安）科技有限公司 | A kind of production method of display panel, display device and display panel |
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Application publication date: 20200623 |
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