CN111668235B - Display panel and preparation method thereof - Google Patents
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- CN111668235B CN111668235B CN202010511582.5A CN202010511582A CN111668235B CN 111668235 B CN111668235 B CN 111668235B CN 202010511582 A CN202010511582 A CN 202010511582A CN 111668235 B CN111668235 B CN 111668235B
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- 238000002360 preparation method Methods 0.000 title abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 134
- 239000010409 thin film Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 228
- 239000002184 metal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 238000010586 diagram Methods 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application provides a display panel and a preparation method thereof, wherein the display panel comprises a substrate, a thin film transistor layer, a reflecting layer and a mini light-emitting diode, the thin film transistor layer is arranged on the substrate, the reflecting layer consists of a first layer, a plurality of second layers and a plurality of third layers, the first layer is formed by adopting a first refractive index material, the second layers are formed by adopting a second refractive index material, the third layers are formed by adopting a third refractive index material, the reflecting layer is provided with a through hole, the through hole exposes the thin film transistor layer, and the mini light-emitting diode is arranged in the through hole so as to be electrically connected with the thin film transistor layer. The reflective layer is formed by alternately laminating two materials with different refractive indexes, so that the light utilization rate of the mini light emitting diode is improved, the power consumption is reduced, and the performance of the display panel is improved.
Description
Technical Field
The application relates to the field of display, in particular to a display panel and a preparation method thereof.
Background
In the prior art, as a backlight of a liquid crystal display, in order to improve the light utilization rate of a light emitting diode, a reflective film is generally attached to a light emitting diode substrate to reflect light emitted by the light emitting diode and light reflected by a diffusion film above the reflective film back into the liquid crystal display, but the thickness of the attached reflective film is relatively thick, so that the light utilization rate of the light emitting diode is affected, the cost is further increased, and the performance of a display panel is affected; the preparation process of the reflective film is incompatible with the conventional transistor manufacturing process, so that the cost is increased, and the production period of the product is prolonged.
Disclosure of Invention
The application provides a display panel and a preparation method thereof, which are used for improving the performance of the display panel.
A display panel, comprising:
a substrate;
the thin film transistor layer is arranged on the substrate;
the reflective layer is composed of a first layered layer, a plurality of second layered layers and a plurality of third layered layers, the first layered layer is arranged on the thin film transistor layer, the second layered layers and the third layered layers are sequentially and alternately stacked on the first layered layer, the first layered layer is formed by adopting a first refractive index material, the second layered layers are formed by adopting a second refractive index material, the third layered layers are formed by adopting a third refractive index material, and the reflective layer is provided with a through hole, and the through hole exposes the thin film transistor layer; and
and the mini light emitting diode is arranged in the through hole so as to be electrically connected with the thin film transistor layer.
In the display panel provided by the application, the refractive index of the first refractive index material is smaller than the refractive index of the second refractive index material, and the refractive index of the third refractive index material is smaller than the refractive index of the first refractive index material.
In the display panel provided by the application, the refractive index of the first refractive index material is 1.90-2.11, the refractive index of the second refractive index material is 2.2-4.6, and the refractive index of the third refractive index material is 1.35-1.55.
In the display panel provided by the application, the thickness of the first layer is 45-54 nanometers, the thickness of the second layer is 15-25 nanometers, and the thickness of the third layer is 100-130 nanometers.
In the display panel provided by the application, the first refractive index material is SiNx, and the second refractive index material comprises SiO 2 And MgF, the third refractive index material comprises ZnS, tiO 2 And one or a combination of several of Si.
The application provides a preparation method of a display panel, which comprises the following steps:
a substrate;
forming a thin film transistor layer on the substrate;
providing a first refractive index material on the thin film transistor layer to form a first layered;
sequentially and alternately stacking a second refractive index material and a third refractive index material on the first layered layer to form a plurality of second layered layers and a plurality of third layered layers, wherein the first layered layer, the plurality of second layered layers and the third layered layers form reflecting layers;
etching the reflecting layer to form a through hole, wherein the through hole exposes the thin film transistor layer;
and arranging a mini light emitting diode in the through hole so as to be electrically connected with the thin film transistor layer.
In the method for manufacturing a display panel provided by the application, the refractive index of the first refractive index material is smaller than the refractive index of the second refractive index material, and the refractive index of the third refractive index material is smaller than the refractive index of the first refractive index material.
In the method for manufacturing the display panel provided by the application, the refractive index of the first refractive index material is 1.90-2.11, the refractive index of the second refractive index material is 2.2-4.6, and the refractive index of the third refractive index material is 1.35-1.55.
In the method for manufacturing the display panel provided by the application, the thickness of the first layered layer is 45-54 nanometers, the thickness of the second layered layer is 15-25 nanometers, and the thickness of the third layered layer is 100-130 nanometers.
In the method for manufacturing a display panel provided by the application, the first refractive index material is SiNx, and the second refractive index material comprises SiO 2 And MgF, the third refractive index material comprises ZnS, tiO 2 And one or a combination of several of Si.
The application provides a display panel and a preparation method thereof, wherein the display panel comprises a substrate, a thin film transistor layer, a reflecting layer and a mini light emitting diode, the thin film transistor layer is arranged on the substrate, the reflecting layer consists of a first layer, a plurality of second layers and a plurality of third layers, the first layer is arranged on the thin film transistor layer, the plurality of second layers and the plurality of third layers are sequentially and alternately laminated and arranged on the first layer, the first layer is formed by adopting a first refractive index material, the plurality of second layers are formed by adopting a second refractive index material, the plurality of third layers are formed by adopting a third refractive index material, the reflecting layer is provided with a through hole, the through hole exposes the thin film transistor layer, and the mini light emitting diode is arranged in the through hole so as to be electrically connected with the thin film transistor layer. In the application, the plurality of second layers and the plurality of third layers are alternately stacked on the first layer to form the reflecting layer, the plurality of first layers are formed by a first refractive index material, the plurality of second layers are formed by a second refractive index material, the plurality of third layers are formed by a third refractive index material, and the reflecting layer is arranged on two sides of the low refractive index layer by adopting the high refractive index layer, so that the light utilization rate of the mini light emitting diode is improved, the power consumption is reduced, and the performance of the display panel is further improved.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a cross-sectional view of a display panel provided by the present application.
Fig. 2 is a cross-sectional view of a structure of a thin film transistor according to the present application.
Fig. 3 is a schematic diagram of a reflective layer structure and a light reflection path thereof according to the present application.
Fig. 4 is a schematic diagram of a reflection curve of a reflection layer according to the present application.
Fig. 5 is a schematic diagram of another reflective layer structure and a light reflection path thereof according to the present application.
Fig. 6 is a flow cross-sectional view of a method for manufacturing a display panel according to the present application.
Detailed Description
The technical solutions of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the application. All other embodiments, based on the embodiments of the application, which a person skilled in the art would obtain without making any inventive effort, are within the scope of the application.
The application provides a display panel. Referring to fig. 1, fig. 1 is a cross-sectional view of a display panel provided by the present application. The display panel 10 includes a substrate 100, a thin film transistor layer 200, a reflective layer 300, and a mini light emitting diode 400.
The substrate 100, the substrate 100 may be a glass substrate.
Referring to fig. 2, fig. 2 is a cross-sectional view of a tft according to the present application. The thin film transistor layer 200 is disposed on the substrate 100. The thin film transistor layer 200 includes a thin film transistor 210, and the thin film transistor 210 includes a gate electrode 201, a first protective layer 202, a gate insulation 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protection layer 202 covers the gate electrode 201. The material of the gate 201 includes one or a combination of a plurality of Mo, al, ti, in and Ga. The gate insulating layer 203 is disposed on the first protective layer 202. The material of the gate insulating layer 203 includes Al 2 O 3 SiOx and SiN X One or a combination of more than one of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source electrode 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protection layer 207 covers the source electrode 205, the drain electrode 206, and the gate insulating layer 203. The second protection layer 207 is used to protect the structure in the thin film transistor 210 from other structures or water oxygen affecting the thin film transistor layer 200. The thin film transistor 210 includes other structures in addition to the structure shown in fig. 2, which are not listed here.
Referring to fig. 3, fig. 3 is a schematic diagram of a reflective layer structure and a light reflection path thereof according to the present application. And a reflective layer 300, wherein the reflective layer 300 is disposed on the thin film transistor layer 200. The reflective layer 300 includes a first layer 310, second layers 320, and third layers 330. The first layer 310 is disposed on the thin film transistor layer 200. A plurality of the second layers 320 and a plurality of the third layers 303 are alternately stacked on the first layer 310. In this embodiment, the reflective layer has a 4-layer layered structure. That is, the reflective layers are formed by sequentially alternately laminating two materials having different refractive indexes on the first layered layer. Specifically, a second layer 320, a third layer 330, and a fourth layer 340 are sequentially stacked on the first layer 310. The first layer 310, the second layer 320, the third layer 330, and the fourth layer 340 constitute a reflective layer 300. The reflective layer 300 is a distributed Bragg reflective layer. The first layer 310 is formed using a first refractive index material. The first refractive material is a high refractive index material. The second sub-layer 320 and the fourth sub-layer 340 are formed using a second refractive index material. The second refractive index material is a high refractive index material. The second refractive index material has a refractive index greater than the refractive index of the first refractive index material. The third sub-layer 330 is formed using a third refractive index material. The third refractive index material is a low refractive index material. The third refractive index material has a refractive index less than the refractive index of the first refractive index material. The reflective layer 300 has a through hole 301. The via 301 exposes the thin film transistor layer 200.
Referring to fig. 4, fig. 4 is a schematic reflection curve of the reflection layer provided by the present application. When light passes through the layered interface formed by two materials with different refractive indexes, the reflective layer 300 reflects the light, and the light reflected by each layer interferes constructively due to the change of the phase angle, and then is combined with each other to obtain strong reflected light, so that the light utilization rate of the mini light emitting diode is improved, the power consumption is reduced, and the performance of the display panel is further improved. The reflection layer 300 reflects more than 75% of light between 400 nm and 690 nm, and more particularly, the reflection layer 300 reflects more than 80% of light between 530 nm and 590 nm. The first layer 310 serves to protect the structure of the reflective layer 300 in addition to having a reflective effect on light.
In another embodiment, the first refractive index material has a refractive index of 1.90-2.11. The second refractive index material has a refractive index of 2.2-4.6. The refractive index of the third refractive index material is 1.35-1.55.
In another embodiment, the first refractive index material is SiNx. The second refractive index material comprises SiO 2 And MgF, or a combination of two. The third refractive index material comprises ZnS and TiO 2 And one or a combination of several of Si.
In another embodiment, the first layer 310 has a thickness of 45 nm-54 nm. The thickness of the second 320 and fourth 340 layers is 15 nm-25 nm. The thickness of the third layer 330 is 100 nm to 130 nm.
Referring to fig. 5, fig. 5 is a schematic diagram of another reflective layer structure and a light reflection path thereof according to the present application. In another embodiment, the second layer 320, the third layer 330, and the fourth layer 340 form the distributed Bragg reflection layer 300.
The bottom of the mini led 500 is provided with a metal paste layer 400. A mini light emitting diode 500 with the metal paste layer 400 is disposed in the via 301 to electrically connect the thin film transistor layer 200. The material of the metal layer 400 includes one or a combination of a plurality of Sn, in, bi, cu, al and Mo. In this embodiment, the metal paste layer 500 is a solder paste layer.
In the application, the mini light emitting diode is arranged on a metal paste layer, and the metal paste layer arranged on the mini light emitting diode is solidified due to the fluidity and the adhesiveness of the metal paste layer, so that the mini light emitting diode is fixed on the metal paste layer, the mini light emitting diode with the metal paste layer is arranged in the through hole, and the mini light emitting diode is further fixed on the thin film transistor layer, thereby avoiding losing the mini light emitting diode in the preparation or use process and influencing the performance of the display panel.
The application provides a display panel, in the display panel, the structure of the reflecting layer is formed by high refractive index materials and low refractive index materials, the layering formed by the low refractive index materials is positioned between the layering formed by the high refractive index materials, so that the structure of the reflecting layer is in a high-low-high structure, when light rays pass through the reflecting layer, the light reflected by each layer interferes constructively due to the change of phase angles and then is combined with each other, strong reflected light is obtained, the reflectivity of the reflecting layer is improved, the light utilization rate of a mini light emitting diode is improved, the power consumption is reduced, the reflecting bandwidth of the reflecting layer is large, the reflecting layer can be used as a reflecting layer of a white backlight, meanwhile, the reflecting layer has a simple structure, is good in process compatibility with a thin film transistor, the cost is low, the performance of the display panel is further improved, and the manufacturing cost of the display panel is reduced.
Referring to fig. 6, fig. 6 is a flow cross-sectional view of a method for manufacturing a display panel according to the present application. The application also provides a preparation method of the display panel 10, which comprises the following steps:
11. a thin film transistor layer 200 is formed on the substrate 100.
A substrate 100 is provided. The substrate 100 may be a glass substrate. A thin film transistor layer 200 is formed on the substrate 100. The thin film transistor layer 200 includes a thin film transistor 210, and the thin film transistor 210 includes a gate electrode 201, a first protective layer 202, a gate insulation 203, an active layer 204, a source electrode 205, a drain electrode 206, and a second protective layer 207. The first protection layer 202 covers the gate electrode 201. The material of the gate 201 includes one or a combination of a plurality of Mo, al, ti, in and Ga. The gate insulating layer 203 is disposed on the first protective layer 202. The material of the gate insulating layer 203 includes Al 2 O 3 SiOx and SiN X One or a combination of more than one of them. The active layer 204 is disposed on the gate insulating layer 203. The material of the active layer 204 includes amorphous silicon. The source 205 is disposed at one end of the gate insulating layer 203 and one end of the active layer 204And (3) an end. The drain electrode 206 is disposed at the other end of the gate insulating layer 203 and the other end of the active layer 204. The source 205 and the drain 206 are insulated from each other. The second protection layer 207 covers the source electrode 205, the drain electrode 206, and the gate insulating layer 203. The second protection layer 207 is used to protect the structure of the thin film transistor layer 200 from other structures or water oxygen affecting other structures in the thin film transistor 210. The thin film transistor 210 includes other structures in addition to the structure shown in fig. 2, which are not listed here.
12. A first layer 310 is formed on the thin film transistor layer 200.
A first refractive index material is deposited on the thin film transistor layer 200 to form a first sub-layer 310. The first refractive index material is a high refractive index material.
In another embodiment, the first refractive index material has a refractive index of 1.90-2.11.
In another embodiment, the first refractive index material is SiNx.
In another embodiment, the first layer has a thickness of 45 nm to 54 nm.
13. The second and third layers 320 and 330 are alternately stacked in order on the first layer 310.
Referring to fig. 4, fig. 4 is a schematic diagram of a reflective layer structure and a light reflection path thereof according to the present application. The second refractive index material and the third refractive index material are alternately laminated on the first layered layer 310 to form a plurality of second layered layers 320 and a plurality of third layered layers 330. Specifically, a second refractive index material, a third refractive index material, and a second refractive index material are disposed one above the other on the first layered layer 310, forming a second layered layer 320, a third layered layer 330, and a fourth layered layer 340. The first, second, third and fourth layers 310, 320, 330 form a reflective layer 300. The reflective layer 300 is a distributed Bragg reflector layer, which is a structure that reflects light at the interface as it passes through different media. The second layer 320 and the fourth layer 340 are made of the same material. The second refractive index material is a high refractive index material. The third refractive index material is a low refractive index material. The first refractive index material has a refractive index that is less than the refractive index of the second refractive index material. The third refractive index material has a refractive index less than the refractive index of the first refractive index material.
In another embodiment, the second refractive index material has a refractive index of 2.2-4.6. The refractive index of the third refractive index material is 1.35-1.55.
In another embodiment, the second refractive index material comprises SiO 2 And MgF, or a combination of two. The third refractive index material comprises ZnS and TiO 2 And one or a combination of several of Si.
In another embodiment, the thickness of the second 320 and fourth 340 layers is 15 nm-25 nm. The thickness of the third layer 330 is 100 nm to 130 nm.
In the application, the structure of the reflecting layer of the display panel is formed by adopting a high refractive index material and a low refractive index material, the layered structure is a layered structure formed by the high refractive index material, a layered structure formed by the low refractive index material and a layered structure formed by the high refractive index material, the layered structure formed by the low refractive index material is arranged between the layered structures formed by the high refractive index material, when light passes through the reflecting layer, the light is reflected when passing through adjacent layered structures formed by different refractive index materials, and the light reflected by each layer is constructively interfered due to the change of phase angles and then mutually combined together to obtain strong reflected light, the reflectivity of the light by the reflecting layer is improved, the mini light emitting diode backlight is combined with the reflecting layer structure, the light utilization rate of the mini light emitting diode is further improved, the power consumption is reduced, and the reflecting bandwidth of the reflecting layer is large, and can be used as the reflecting layer of a white backlight.
Referring to fig. 5, fig. 5 is a schematic diagram of another reflective layer structure and a light reflection path thereof according to the present application. In another embodiment, the second layer 320, the third layer 330, and the fourth layer 340 form the distributed Bragg reflection layer 300.
14. The reflective layer 300 is etched to form a via 301, the via 301 exposing the thin film transistor layer 200.
The reflective layer 300 is dry etched to form the via 301. The method used for etching the reflective layer 300 into the through hole 301 is not limited, and a corresponding etching method may be adopted according to specific requirements.
15. A mini light emitting diode 500 is disposed in the via 301 to electrically connect the thin film transistor layer 200.
The bottom of the mini led 500 is provided with a metal paste layer 400. A mini light emitting diode 500 with the metal paste layer 400 is disposed in the through hole 301. The material of the metal paste layer 400 includes one or a combination of a plurality of Sn, in, bi, cu, al and Mo. In this embodiment, the metal paste layer 400 is a solder paste layer.
In the application, the mini light emitting diode is arranged on a metal paste layer, and the metal paste layer arranged on the mini light emitting diode is solidified due to the fluidity and the adhesiveness of the metal paste layer, so that the mini light emitting diode is fixed on the metal paste layer, the mini light emitting diode with the metal paste layer is arranged in the through hole, and the mini light emitting diode is further fixed on the thin film transistor layer, thereby avoiding losing the mini light emitting diode in the preparation or use process and influencing the performance of the display panel.
The application provides a display panel and a preparation method thereof, in the preparation method of the display panel, the structure of the reflecting layer is formed by adopting a high refractive index material and a low refractive index material, the presented layered structure is a layered formed by the high refractive index material, a layered formed by the low refractive index material and a layered formed by the high refractive index material, the layered formed by the low refractive index material is arranged between the layered formed by the high refractive index material, when light rays pass through the reflecting layer, the light rays can be reflected on the interfaces of the two layered layers with different refractive indexes, and the light rays reflected by the layers are subjected to constructive interference due to the change of phase angles and then are mutually combined together to obtain strong reflected light, the reflecting layer has the advantages of simple structure, good compatibility with the thin film transistor, low preparation cost, easy realization, improved preparation efficiency of the display panel and reduced preparation cost of the display panel.
The foregoing has provided a detailed description of embodiments of the application, with specific examples being set forth herein to provide a thorough understanding of the application. Meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (8)
1. A display panel, comprising:
a substrate;
the thin film transistor layer is arranged on the substrate;
the reflective layer comprises a first layered layer, the first layered layer is arranged on the thin film transistor layer, a second layered layer, a third layered layer and a fourth layered layer are sequentially arranged on the first layered layer in a layered mode, the first layered layer is formed by adopting a first refractive index material, the second layered layer and the fourth layered layer are formed by adopting a second refractive index material, the third layered layer is formed by adopting a third refractive index material, and the reflective layer is provided with a through hole, and the through hole exposes the thin film transistor layer; and
the mini light-emitting diode is arranged in the through hole to be electrically connected with the thin film transistor layer;
wherein the refractive index of the first refractive index material is smaller than the refractive index of the second refractive index material, and the refractive index of the third refractive index material is smaller than the refractive index of the first refractive index material.
2. The display panel of claim 1, wherein the first refractive index material has a refractive index of 1.90-2.11, the second refractive index material has a refractive index of 2.2-4.6, and the third refractive index material has a refractive index of 1.35-1.55.
3. The display panel of claim 1, wherein the first layer has a thickness of 45 nm to 54 nm, the second layer has a thickness of 15 nm to 25 nm, and the third layer has a thickness of 100 nm to 130 nm.
4. The display panel of claim 1, wherein the first refractive index material is SiNx and the second refractive index material comprises SiO 2 And MgF, the third refractive index material comprises ZnS, tiO 2 And one or a combination of several of Si.
5. A method for manufacturing a display panel, comprising:
a substrate;
forming a thin film transistor layer on the substrate;
providing a first refractive index material on the thin film transistor layer to form a first layered;
a second refractive index material, a third refractive index material and a second refractive index material are sequentially laminated on the first layered layer to form a second layered layer, a third layered layer and a fourth layered layer, and the first layered layer, the second layered layer, the third layered layer and the fourth layered layer form a reflecting layer;
etching the reflecting layer to form a through hole, wherein the through hole exposes the thin film transistor layer;
arranging a mini light emitting diode in the through hole so as to be electrically connected with the thin film transistor layer;
wherein the refractive index of the first refractive index material is smaller than the refractive index of the second refractive index material, and the refractive index of the third refractive index material is smaller than the refractive index of the first refractive index material.
6. The method of manufacturing a display panel according to claim 5, wherein the first refractive index material has a refractive index of 1.90 to 2.11, the second refractive index material has a refractive index of 2.2 to 4.6, and the third refractive index material has a refractive index of 1.35 to 1.55.
7. The method of manufacturing a display panel according to claim 5, wherein the first layer has a thickness of 45 nm to 54 nm, the second layer has a thickness of 15 nm to 25 nm, and the third layer has a thickness of 100 nm to 130 nm.
8. The method of manufacturing a display panel according to claim 5, wherein the first refractive index material is SiNx and the second refractive index material comprises SiO 2 And MgF, the third refractive index material comprises ZnS, tiO 2 And one or a combination of several of Si.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010511582.5A CN111668235B (en) | 2020-06-08 | 2020-06-08 | Display panel and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010511582.5A CN111668235B (en) | 2020-06-08 | 2020-06-08 | Display panel and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111668235A CN111668235A (en) | 2020-09-15 |
| CN111668235B true CN111668235B (en) | 2023-10-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010511582.5A Active CN111668235B (en) | 2020-06-08 | 2020-06-08 | Display panel and preparation method thereof |
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