CN101442090B - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN101442090B CN101442090B CN2007101886664A CN200710188666A CN101442090B CN 101442090 B CN101442090 B CN 101442090B CN 2007101886664 A CN2007101886664 A CN 2007101886664A CN 200710188666 A CN200710188666 A CN 200710188666A CN 101442090 B CN101442090 B CN 101442090B
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Abstract
The invention discloses an LED and a method for manufacturing the same. The LED at least comprises a substrate, a jagged multi-layer film, a semiconductor layer of a first form, an active luminous layer and a semiconductor layer of a second form, wherein the jagged multi-layer film is formed below the semiconductor layer of the first form corresponding to the active luminous layer by using an autocloning photonic crystal manufacturing method. The jagged multi-layer film is arranged on the LED substrate, so light rays diverged from the back of the active illumination is reflected through the structure and reused to make all light rays concentrate to emit in a positive direction, and improve the light collecting efficiency of the LED.
Description
Technical field
The present invention relates to a kind of light-emitting diode (light emitting diode is called for short LED) technology, and be particularly related to a kind of light-emitting diode and manufacture method thereof that light draws efficient (light extraction efficiency) that promote.
Background technology
Light-emitting diode is a kind of semiconductor element, mainly is to be made of III-V group element compound semi-conducting material.Because this semi-conducting material has the characteristic that converts electrical energy into light, so when this semi-conducting material applied electric current, its inner electronics can combine with the hole, and the energy of surplus is disengaged with the form of light, and reaches luminous effect.
Fig. 1 is the generalized section of known a kind of light-emitting diode.Please refer to Fig. 1, known light-emitting diode 10 is made of a substrate 100 and one deck n type semiconductor layer 102, one deck active illuminating layer 104 and one deck p type semiconductor layer 106 on it usually.And, have n type electrode 108 on n type semiconductor layer 102 surfaces, have p type electrode 110 on p type semiconductor layer 106 surfaces.
But, with traditional gallium nitride (GaN) light-emitting diode, typically using sapphire (Sapphire) is epitaxial substrate.Because sapphire is transparent material, make the emission that scatters of light-emitting diode light guide, can't focus utilization and form consume, as among Fig. 1 from active illuminating layer 104 toward substrates 100 beneath arrows.Simultaneously, the light that scatters can be absorbed and accumulation of heat by inner each semiconductor layer, so can reduce the emitting brightness and the efficient of gallium nitride light-emitting diode.
In order to promote lumination of light emitting diode efficient, the mode (as U.S. Pat 6091085 or U.S. Pat 2003057444A1) that the extension sapphire substrate is made into periodic structure is arranged recently, with epitaxy defect, the lifting brightness that reduces gallium nitride.Simultaneously, one dimension periodically optical grating construction can make part back light refraction return positive luminous utilization again, and the light that promotes whole light-emitting diode draws efficient.
Yet optical grating construction is for vertical incidence ray refraction poor effect, must wide-angle reflection of incident light effect can manifest, and therefore the effect of recycling for the light of vertical ejaculation is obviously limited.
Summary of the invention
The invention provides a kind of light-emitting diode, can significantly improve the reflecting effect of forward vertical light, promote light-emitting diode backside reflection rate, towards the luminous utilization of forward.
The present invention provides a kind of manufacturing method for LED in addition, can promote the luminous efficiency of whole light-emitting diode.
The present invention provides a kind of manufacturing method for LED again, can promote the luminous efficiency of whole light-emitting diode through less step.
The present invention proposes a kind of light-emitting diode, comprises a substrate, one deck first form semiconductor layer, one deck active illuminating layer, one deck second form semiconductor layer and one deck zigzag multilayer film at least.The above-mentioned first form semiconductor layer is positioned on the substrate, the active illuminating layer is positioned on the first form semiconductor layer, the second form semiconductor layer is positioned on the active illuminating layer.Then be positioned under the first form semiconductor layer and dispose as for the zigzag multilayer film with respect to the active illuminating layer.
In one embodiment of this invention, above-mentioned zigzag multilayer film has photon crystal structure.
In one embodiment of this invention, above-mentioned zigzag multilayer film can be under substrate base or between the substrate and the first form semiconductor layer.
In one embodiment of this invention, above-mentioned zigzag multilayer film has network (latticestructure).
In one embodiment of this invention, above-mentioned network comprises one dimension, two dimension or three-dimensional structure.
In one embodiment of this invention, the arrangement mode of above-mentioned network comprises triangle, hexagon (Hexagonal), square or mixes the array of pattern.
In one embodiment of this invention, the external form of above-mentioned network comprises square, stripe shape, triangle or semicircle.
In one embodiment of this invention, the cycle of above-mentioned network and/or height can be used to determine that network is applicable to the emission wavelength scope of light-emitting diode.
In one embodiment of this invention, above-mentioned zigzag multilayer film is to be periodically to pile up, and is alternately piled up by the material of two or more different refractivities and to form.
In one embodiment of this invention, above-mentioned zigzag multilayer film be applicable to the emission wavelength scope of light-emitting diode be in the refractive index of the cycle, stacked film thickness, the stacked film number of plies and the stacked film material that depend on the zigzag multilayer film at least one.
In one embodiment of this invention, the material of the stacked film in the above-mentioned zigzag multilayer film is to be selected from TiO
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.
In one embodiment of this invention, the material of aforesaid substrate comprises sapphire (Sapphire), carborundum (SiC), silicon (Si), GaAs (GaAs), lithium aluminate (LiAlO
2), lithium gallium oxide (LiGaO
2) or aluminium nitride (AlN).
In one embodiment of this invention, when the zigzag multilayer film is stacked on the substrate, then the initial face shaping of aforesaid substrate comprises triangular in shape, the square or semicircular stripe shape of pyrometric cone, square shape, semicircle or section.
The present invention proposes a kind of manufacturing method for LED in addition, comprises utilizing self-replacation formula photonic crystal (autocloning photonic crystal) manufacture method, makes one deck zigzag multilayer film on a substrate.Then, patterning zigzag multilayer film is to form a network.Afterwards, on substrate, form one deck first form semiconductor layer and grid coverage structure, on the first form semiconductor layer, form one deck active illuminating layer again.Then, on the active illuminating layer, form one deck second form semiconductor layer.
The present invention proposes a kind of manufacturing method for LED again, comprises a) forming one deck first form semiconductor layer on a substrate; B) on the first form semiconductor layer, form one deck active illuminating layer; C) on the active illuminating layer, form one deck second form semiconductor layer.In addition, be chosen in before the step a or behind step c, utilize self-replacation formula photonic crystal manufacture method under substrate base, to form one deck zigzag multilayer film.
In another embodiment of the present invention, the material of the stacked film of above-mentioned zigzag multilayer film is to be selected from TiO
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.
In another embodiment of the present invention, the material of aforesaid substrate comprises sapphire (Sapphire), carborundum (SiC), silicon (Si), GaAs (GaAs), lithium aluminate (LiAlO
2), lithium gallium oxide (LiGaO
2) or aluminium nitride (AlN).
The present invention is because add the zigzag multilayer film in light-emitting diode, so see through the energy gap of the photon crystal structure in the zigzag multilayer film, produce comprehensive reflecting effect (Omnidirectional reflector), the light that the light-emitting diode back is launched, inject this structure in any angle, all can total reflection, periodically the grating design changes the anaclasis direction simultaneously, allow light source vertically concentrate the forward bright dipping, make whole lumination of light emitting diode improved efficiency.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the generalized section of known a kind of light-emitting diode.
Fig. 2 is the generalized section according to a kind of light-emitting diode of the first embodiment of the present invention.
Fig. 3 A to Fig. 3 C is the arrangement mode top view of the zigzag multilayer film of Fig. 2.
Fig. 4 is the enlarged drawing of the zigzag multilayer film of Fig. 2.
Fig. 5 A is the face shaping schematic perspective view of the substrate of Fig. 4.
Fig. 5 B and Fig. 5 F are the distortion schematic diagrames of face shaping of the substrate of Fig. 4.
Fig. 6 is the graph of a relation of self-replacation formula photonic crystal between wavelength and reflectivity with Fig. 4 design.
Fig. 7 is the generalized section according to a kind of light-emitting diode of the second embodiment of the present invention.
Fig. 8 is a kind of distortion schematic diagram of the light-emitting diode of Fig. 7.
Fig. 9 A to Fig. 9 E then is the manufacturing process generalized section according to a kind of light-emitting diode of the third embodiment of the present invention.
Figure 10 is the process sequence diagram according to a kind of light-emitting diode of the fourth embodiment of the present invention.
Description of reference numerals
10,20,70: light-emitting diode 100,200,800,900: substrate
102:n type semiconductor layer 104,206,908: active illuminating layer
106:p type semiconductor layer 108:n type electrode
110:p type electrode 202,700,902: zigzag multilayer film
204,906: the first form semiconductor layers 208,910: the second form semiconductor layers
210,912: the first form electrodes 212,914: the second form electrodes
300a, 300b, 300c: array 302: the cycle of network
402: the second stacked films of 400: the first stacked films
404: the cycle 500a of zigzag multilayer film: pyrometric cone
500b: square shape 500c: semicircle
500d, 500e, 500f: stripe shape 802: face shaping
900a: triangle basis structure 904: web
1000～1006: step n
L, n
H: refractive index
d
L, d
H: thickness
Embodiment
Following conjunction with figs. is fully described embodiments of the invention, but the present invention still can many multi-form practices, and it should be interpreted as being limited to embodiment as herein described.In fact provide these embodiment only for making disclosure of the present invention more detailed and complete, and fully convey the scope of the invention to those skilled in the art.And in graphic, for may each layer of not drawn on scale for the purpose of clear and definite and the size and the relative size thereof in zone.
Fig. 2 is the generalized section according to a kind of light-emitting diode of the first embodiment of the present invention.
Please refer to Fig. 2, the light-emitting diode 20 of first embodiment comprises that at least a substrate 200, one deck zigzag multilayer film 202, the first form semiconductor layer 204 of the one deck on substrate 200, one deck active illuminating layer 206 and one deck second form semiconductor layer 208 constitute.The first form semiconductor layer 204 is positioned on the substrate 200, active illuminating layer 206 is positioned on the first form semiconductor layer 204, the second form semiconductor layer 208 is positioned on the active illuminating layer 206.Be positioned under the first form semiconductor layer 204 and with respect to 206 configuration of active illuminating layer as for 202 of zigzag multilayer films.With first embodiment, above-mentioned zigzag multilayer film 202 is between the substrate 200 and the first form semiconductor layer 204.And zigzag multilayer film 202 has network (lattice structure), and has photon crystal structure in network.About this point, will be described in more detail below.
Please continue with reference to Fig. 2, the material of aforesaid substrate 200 is sapphire (Sapphire), carborundum (SiC), silicon (Si), GaAs (GaAs), lithium aluminate (LiAlO for example
2), lithium gallium oxide (LiGaO
2) or aluminium nitride (AlN).Be to be example in first embodiment with sapphire substrate 200.In addition, have usually on the first form semiconductor layer, 204 surfaces the first form electrode 210, have the second form electrode 212 usually on the second form semiconductor layer, 208 surfaces.And the first form semiconductor layer 204 can be the n type semiconductor layer, the second form semiconductor layer 208 can be the p type semiconductor layer, and therefore the first form electrode 210 is that n type electrode, the second form electrode 212 are p type electrodes.
About the zigzag multilayer film 202 of first embodiment, be on substrate 200, to be periodically to pile up, and alternately pile up the high low-index material that forms, as self-replacation formula photonic crystal by the material of two or more different refractivities.For instance, the material of the stacked film in the zigzag multilayer film 202 is to be selected from TiO
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.
In addition, the zigzag multilayer film 202 of first embodiment has network, and it can comprise one dimension, two dimension or three-dimensional structure.And the arrangement mode of above-mentioned network can be the array 300a (as Fig. 3 A) of leg-of-mutton array, hexagon (hexagonal), tetragonal array 300b (as Fig. 3 B) or mix the array 300c (as Fig. 3 C) of pattern.Except can image pattern 3A to Fig. 3 C being the semicircle, can also be square, stripe shape or triangle etc. as for the external form of network.And in first embodiment, the cycle of above-mentioned network and/or height can be used to determine that network is applicable to the emission wavelength scope of light-emitting diode, be example with the 450nm blue light for example, the cycle 302 of show grid structure is about 1～20 μ m among Fig. 3 B.
And, except the cycle by above-mentioned network with 2 and/or be the parameter of macroscopic highly so, decide network to be applicable to outside the emission wavelength scope of light-emitting diode, in first embodiment, still need by the cooperation of following condition, the suitable characteristic of control light reflection, as: in the refractive index of the cycle of zigzag multilayer film 202, stacked film thickness, the stacked film number of plies and stacked film material at least one.With the 450nm blue light-emitting diode is example, and Fig. 4 shows the enlarged drawing of the zigzag multilayer film 202 of first embodiment.In Fig. 4, zigzag multilayer film 202 is coated on the substrate 200 that initial face shaping is a pyrometric cone, the pyrometric cone 500a of its stereogram shown in Fig. 5 A.In Fig. 4 and Fig. 5 A, first stacked film 400 and second stacked film 402 that are positioned on the sapphire substrate 200 are respectively the material of low-refraction and the material of high index of refraction, the wherein refractive index n of first stacked film 400
LBe about 1.3～2.5, thickness d
LBe about 50～200nm; And the refractive index n of second stacked film 402
HBe about 1.5～4, thickness d
HBe about 50～200nm, and the cycle 404 of zigzag multilayer film 202 is about 200～1000nm.The photonic crystal energy gap that obtains via above design will fall within the emission wavelength of light-emitting diode, and then this zigzag multilayer film 202 promptly forms comprehensive speculum, and the light incident of any light-emitting diode all can be reflected fully.
Except that the pyrometric cone 500a shown in Fig. 5 A, the initial face shaping of substrate can also be square shape 500b (as Fig. 5 B) or semicircle 500c (as Fig. 5 C).In addition, the stripe shape 500e (as Fig. 5 E) that the initial face shaping of substrate also can be section stripe shape 500d triangular in shape (as Fig. 5 D), section is square or the stripe shape 500f (as Fig. 5 F) of section semicircular in shape etc.
Fig. 6 is the graph of a relation of self-replacation formula photonic crystal between wavelength and reflectivity with Fig. 4 design.As can be seen from Figure 6, no matter be that TE mould or TM mould can both reflect utilization fully with blue light-emitting diode back side light in 420～470nm scope, reflectivity reaches 99%.Simultaneously, periodically the raster grating structure can change the light refraction direction, can not make light toward the emission of light-emitting diode back, can improve lumination of light emitting diode efficient thus.
Fig. 7 is the generalized section according to a kind of light-emitting diode of the second embodiment of the present invention, wherein uses and the identical or similar elements of the first embodiment components identical symbology.
Please refer to Fig. 7, the light-emitting diode 70 of second embodiment is the same with first embodiment have a substrate 200 with its on one deck first form semiconductor layer 204, one deck active illuminating layer 206 and one deck second form semiconductor layer 208; It is that a whole layer is positioned under the substrate 200 that difference is in the zigzag multilayer film 700 of second embodiment.Detailed construction and design concept about zigzag multilayer film 700 then can be with reference to first embodiment.
In addition, the light-emitting diode of second embodiment can also have other distortion, and as shown in Figure 8, use therein is patterned substrate 800, such as face shaping is the sapphire substrate (patternedsapphire substrate) of patterning.In addition, the face shaping 802 of patterned substrate can be stripe shape, square, triangle, and semicircle etc.Zigzag multilayer film 700 then is the another side that is positioned at substrate 800 no face shapings 802.
Fig. 9 A to Fig. 9 E then is the manufacturing process generalized section according to a kind of light-emitting diode of the third embodiment of the present invention.
Please refer to Fig. 9 A, a substrate 900 is provided earlier.And the material of substrate 900 for example sapphire (Sapphire), carborundum (SiC), silicon (Si), GaAs (GaAs), lithium aluminate (LiAlO
2), lithium gallium oxide (LiGaO
2) or aluminium nitride (AlN).In addition, can use photoetching technique to make triangle basis structure 900a earlier on substrate 900, its cycle is about the 240nm cycle at the luminous wave band decision of light-emitting diode as the basic structure of the triangle of 450nm blue light.
Then, please refer to Fig. 9 B, utilize self-replacation formula photonic crystal (autocloning photoniccrystal) manufacture method, on substrate 900, make one deck zigzag multilayer film 902.For instance, can be on sapphire substrate 900 with triangle basis structure 900a, utilize ion beam sputtering technology (IonBeam Sputtering) to cooperate rf bias etching mechanism (RF Bias Etching), the high low refractive index film material of sputter, alternately control stacked film deposition rate and bias voltage etch-rate, reach the external form of finishing stacked film, and form the distribution of zigzag multilayer film fold.Wherein, the material of the stacked film of zigzag multilayer film 902 for example is to be selected from TiO
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.
Then, please refer to Fig. 9 C, utilize the gold-tinted photoetching process, be made into the web 904 of grid on zigzag multilayer film 902 surfaces.
Afterwards, please refer to Fig. 9 D, finish network 902a, and network 902a can be by strip, circle, structure that rectangle or triangle were organized into dry etching or wet etching.
At last, please refer to Fig. 9 E, after finishing network 902a, then on substrate 900, form one deck first form semiconductor layer 906 and cover above-mentioned network 902a, on the first form semiconductor layer 906, form the active illuminating layer 908 and the second form semiconductor layer 910 then in regular turn.Afterwards, can form the first form electrode 912 and the second form electrode 914 at the first form semiconductor layer 906 and the second form semiconductor layer, 910 surfaces.
Figure 10 is the process sequence diagram according to a kind of light-emitting diode of the fourth embodiment of the present invention.
Please refer to Figure 10, in step 1000, on substrate, form the first form semiconductor layer, wherein for example sapphire (Sapphire), carborundum (SiC), silicon (Si), GaAs (GaAs), lithium aluminate (LiAlO of the material of substrate
2), lithium gallium oxide (LiGaO
2) or aluminium nitride (AlN).Then, in step 1002, on the first form semiconductor layer, form the active illuminating layer.Then, in step 1004, on the active illuminating layer, form the second form semiconductor layer.In the 4th embodiment, need be chosen in before the step 1000 or after step 1004, carry out step 1006, utilize self-replacation formula photonic crystal (autocloning photoniccrystal) manufacture method, form one deck zigzag multilayer film under substrate base, wherein the material of the stacked film of zigzag multilayer film is to be selected from TiO for example
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.Because the 4th embodiment does not need extra gold-tinted technology and etch process, so can save process time and cost.
In sum, zigzag multilayer film of the present invention and or its network is the three-D photon crystal element, see through the energy gap of photonic crystal, produce comprehensive reflecting effect (Omnidirectional reflector), the light that the light-emitting diode back is launched is injected this zigzag multilayer film in any angle, all can total reflection, can change the anaclasis direction by the design of periodicity grating simultaneously, allow light source vertically concentrate the forward bright dipping, make whole lumination of light emitting diode improved efficiency.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (18)
1. light-emitting diode comprises at least:
Substrate;
The first form semiconductor layer is positioned on this substrate;
The active illuminating layer is positioned on this first form semiconductor layer;
The second form semiconductor layer is positioned on this active illuminating layer; And
The zigzag multilayer film is positioned under this first form semiconductor layer with respect to this active illuminating layer configuration, and wherein this zigzag multilayer film is to be the photon crystal structure that periodically piles up, and is alternately piled up by the material of two or more different refractivities and to form.
2. light-emitting diode as claimed in claim 1, wherein this zigzag multilayer film is positioned under this substrate base.
3. light-emitting diode as claimed in claim 1, wherein this zigzag multilayer film is between this substrate and this first form semiconductor layer.
4. light-emitting diode as claimed in claim 3, wherein this zigzag multilayer film has network.
5. light-emitting diode as claimed in claim 4, wherein this network comprises one dimension, two dimension or three-dimensional structure.
6. light-emitting diode as claimed in claim 4, wherein the arrangement mode of this network comprises triangle, hexagon, square or mixes the array of pattern.
7. light-emitting diode as claimed in claim 4, wherein the external form of this network comprises square, stripe shape, triangle or semicircle.
8. light-emitting diode as claimed in claim 4, wherein this network is applicable to that the emission wavelength scope of this light-emitting diode is cycle and/or the height that depends on this network.
9. light-emitting diode as claimed in claim 1, wherein this zigzag multilayer film be applicable to the emission wavelength scope of this light-emitting diode be in the refractive index of the cycle, stacked film thickness, the stacked film number of plies and the stacked film material that depend on this zigzag multilayer film at least one.
10. light-emitting diode as claimed in claim 1, wherein the material of the stacked film in this zigzag multilayer film is to be selected from TiO
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.
11. light-emitting diode as claimed in claim 1, wherein the material of this substrate comprises sapphire, carborundum, silicon, GaAs, lithium aluminate, lithium gallium oxide or aluminium nitride.
12. light-emitting diode as claimed in claim 1, wherein this zigzag multilayer film is stacked on this substrate, and the initial face shaping of this substrate comprises triangular in shape, the square or semicircular stripe shape of pyrometric cone, square shape, semicircle or section.
13. a manufacturing method for LED comprises:
Utilize self-replacation formula photonic crystal manufacture method, make the zigzag multilayer film on substrate, wherein this zigzag multilayer film is to be the photon crystal structure that periodically piles up, and is alternately piled up by the material of two or more different refractivities and to form;
This zigzag multilayer film of patterning is to form network;
On this substrate, form the first form semiconductor layer and cover this network;
On this first form semiconductor layer, form the active illuminating layer; And
On this active illuminating layer, form the second form semiconductor layer.
14. manufacturing method for LED as claimed in claim 13, wherein the material of the stacked film of this zigzag multilayer film is to be selected from TiO
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.
15. manufacturing method for LED as claimed in claim 13, wherein the material of this substrate comprises sapphire, carborundum, silicon, GaAs, lithium aluminate, lithium gallium oxide or aluminium nitride.
16. a manufacturing method for LED comprises:
A) on substrate, form the first form semiconductor layer;
B) on this first form semiconductor layer, form the active illuminating layer;
C) on this active illuminating layer, form the second form semiconductor layer; And
Be chosen in before the step a or behind step c, utilize self-replacation formula photonic crystal manufacture method, under this substrate base, form the zigzag multilayer film, wherein this zigzag multilayer film is to be the photon crystal structure that periodically piles up, and is alternately piled up by the material of two or more different refractivities and to form.
17. manufacturing method for LED as claimed in claim 16, wherein the material of the stacked film of this zigzag multilayer film is to be selected from TiO
2, Ta
2O
5, Nb
2O
5, CeO
2, ZnS, ZnO, GaN, SiN
x, AlN, Al
2O
3, SiO
2With MgF
2In two kinds of materials.
18. manufacturing method for LED as claimed in claim 16, wherein the material of this substrate comprises sapphire, carborundum, silicon, GaAs, lithium aluminate, lithium gallium oxide or aluminium nitride.
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| EP2452350A1 (en) * | 2009-07-09 | 2012-05-16 | NLAB Solar AB | Dye sensitized solar cell with improved optical characteristics |
| CN101853912A (en) * | 2010-04-08 | 2010-10-06 | 苏州大学 | Light-emitting diode for enhancing polarized light emission |
| CN102263181B (en) * | 2010-05-29 | 2014-04-30 | 比亚迪股份有限公司 | Substrate, light-emitting diode (LED) epitaxial wafer with substrate, chip and luminous device |
| KR101215299B1 (en) * | 2010-12-30 | 2012-12-26 | 포항공과대학교 산학협력단 | Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method |
| CN103137815A (en) * | 2013-02-28 | 2013-06-05 | 合肥彩虹蓝光科技有限公司 | Novel pattern sapphire substrate (PSS) structure and manufacturing method |
| CN107134516A (en) * | 2017-06-21 | 2017-09-05 | 海迪科（南通）光电科技有限公司 | A kind of novel light-emitting light source |
| WO2022104594A1 (en) * | 2020-11-18 | 2022-05-27 | 苏州晶湛半导体有限公司 | Semiconductor structure |
| CN113013300A (en) * | 2021-05-25 | 2021-06-22 | 北京芯海视界三维科技有限公司 | Light emitting device and display device |
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| CN1874012A (en) * | 2005-06-03 | 2006-12-06 | 北京大学 | High-luminance chip of luminescent tube in GaN base, and preparation method |
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| CN1874012A (en) * | 2005-06-03 | 2006-12-06 | 北京大学 | High-luminance chip of luminescent tube in GaN base, and preparation method |
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| JP特开2006-237254A 2006.09.07 |
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