CN205488195U - Semiconductor light emitting element - Google Patents
Semiconductor light emitting element Download PDFInfo
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- CN205488195U CN205488195U CN201620288179.XU CN201620288179U CN205488195U CN 205488195 U CN205488195 U CN 205488195U CN 201620288179 U CN201620288179 U CN 201620288179U CN 205488195 U CN205488195 U CN 205488195U
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- Prior art keywords
- layer
- aluminum oxide
- semiconductor light
- oxide layer
- emitting elements
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000011148 porous material Substances 0.000 claims abstract description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 38
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 239000004411 aluminium Substances 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model provides a semiconductor light emitting element which is through inserting one deck anodised aluminium layer between substrate and buffer layer to with the buffer layer deposit inside anodised aluminium pore structure, the refraction coefficient of enrichment, and then promote the outer quantum effect of light. Simultaneously because the anodised aluminium layer has higher density and hardness, angularity when reducing the epitaxial layer and growing is simultaneously in the lateral wall corrosion process of chip processing procedure for reduce the extent of corrosion of chemical solution, improve the chip yield.
Description
Technical field
The invention belongs to technology technical field of semiconductors, particularly relate to a kind of semiconductor light-emitting elements.
Background technology
The light extraction efficiency of light emitting diode refers to shine the ratio of photon total produced by photon beyond device surface and the active area electron-hole recombinations of epitaxial wafer.In conventional LED devices, due to the existence of the factors such as the total reflection of bright finish, substrate absorption, electrode stop, light extraction efficiency is below 30%, and overwhelming majority photons are limited in device inside and are repeatedly absorbed, finally discharge with the form of heat, thus affect device reliability.
The most conventional is to use patterned Sapphire Substrate or arrange DBR reflecting layer to increase light extraction efficiency at its back.But still suffer from the problem that light extraction efficiency is low；Additionally, utilize laser easily to produce the excessive erosion phenomenon of cushion or cushion and substrate contact surface, the core particles electric characteristic abnormality resulted in when soaking chemical solution after epitaxial wafer surface is cut, reduce and produce yield.
Summary of the invention
For solving the problems referred to above, the present invention proposes a kind of semiconductor light-emitting elements, at least include a substrate and the cushion being sequentially located on substrate and epitaxial layer, it is characterized in that: between described substrate and cushion, also include an anodic aluminum oxide layer, described anodic aluminum oxide layer has the pore space structure of periodic distribution, and described buffer layer deposition is in described hole structure and covers the surface of described anodic aluminum oxide layer.
Preferably, the hole diameter size of described anodic aluminum oxide layer is 1nm ~ 100nm.
Preferably, the hole distribution density of described anodic aluminum oxide layer is 1 × 108~1×1011 cm-2。
Preferably, the thickness of described anodic aluminum oxide layer is 5 ~ 100nm.
Preferably, the spacing between the adjacent holes of described anodic aluminum oxide layer is 20-300nm.
Preferably, the thickness of described cushion is more than the thickness of anodic aluminum oxide layer.
Preferably, described cushion is aluminum nitride buffer layer.
Preferably, described cushion includes aluminum nitride buffer layer and is positioned at the nitride buffer layer on described aluminum nitride buffer layer.
Preferably, described epitaxial layer at least includes: N-type layer, luminescent layer and P-type layer.
Preferably, described substrate is plain film substrate or patterned substrate.
The present invention at least has the advantages that 1) insert between substrate and cushion there is the anodic aluminum oxide layer of periodic hole structure, change the refraction angle of light from epitaxial layer directive substrate, and then increase and light；2) anodic aluminum oxide layer has higher hardness and consistency, reduces angularity during epitaxial growth；3) buffer layer deposition and covers the surface of anodic aluminum oxide layer in pore space structure, increase the contact interface area of anodised aluminium and cushion, further with the corrosion resistance that interface is preferable, make in the sidewall corrosion process of chip processing procedure, reduce the chemical solution extent of corrosion to chip sidewall, improve chip yield.
Accompanying drawing explanation
Accompanying drawing is used for providing being further appreciated by of the present utility model, and constitutes a part for description, is used for explaining this utility model, is not intended that restriction of the present utility model together with embodiment of the present utility model.Additionally, accompanying drawing data are to describe summary, it is not drawn to scale.
Fig. 1 is the light emitting diode construction schematic diagram of this utility model detailed description of the invention.
Fig. 2 is the anodic aluminum oxide layer structural representation of this utility model detailed description of the invention.
Fig. 3 is anodic aluminum oxide layer and the aln layer partial structurtes schematic diagram of this utility model detailed description of the invention.
Accompanying drawing marks: 100: substrate；200: anodic aluminum oxide layer；210: hole；300: cushion；310: aluminum nitride buffer layer；320: nitride buffer layer；400: epitaxial layer；410:N type layer；420: luminescent layer；430:P type layer.
Detailed description of the invention
With embodiment, detailed description of the invention of the present utility model is described in detail below in conjunction with the accompanying drawings.
Referring to accompanying drawing 1, a kind of semiconductor light-emitting elements that the present invention provides, including the anodic aluminum oxide layer 200 stacked gradually on substrate 100, cushion 300 and epitaxial layer 400, wherein, epitaxial layer 400 is gallium nitride semiconductor layers, gallium arsenide semiconductor layer or aluminum indium gallium phosphorus semiconductor layer, epitaxial layer 400 in the present embodiment is gallium nitride semiconductor layers, it at least includes N-type layer 410, luminescent layer 420 and P-type layer 430, the periodic structure layer that luminescent layer 420 forms for InGaN/GaN, n-type doping impurity is silicon, germanium, stannum, and p-type impurity is magnesium, strontium, barium；Substrate 100 is plain film substrate or patterned substrate 100, preferably patterned sapphire substrate, to increase the extraction efficiency of light.
Referring to accompanying drawing 2 ~ 3, anodic aluminum oxide layer 200 is a kind of hexagon high rule hole 210 array structure, and the thickness of cushion 300 is more than the thickness of anodic aluminum oxide layer 200, and its preferential deposition is in hole 210 and covers the surface of anodic aluminum oxide layer 200.The material of cushion 300 is AlxInyGa1-x-ynullN，Wherein，0≤x≤1，0≤y≤1，Further，Cushion 300 is the aluminum nitride buffer layer 310 of sputtering sedimentation or includes the aluminum nitride buffer layer 310 of sputtering sedimentation and be positioned at thereon by the nitride buffer layer 320 of chemical vapor deposition，Aluminum nitride buffer layer 310 preferential deposition of sputtering sedimentation is in hole 210 structure of anodic aluminum oxide layer 200，And cover its surface，Form the aluminum nitride buffer layer 310 of surfacing，Increase the contact area of aluminum nitride buffer layer 310 and anodic aluminum oxide layer 200，Experimental result finds，Anodic aluminum oxide layer 200 nitride buffer layer 320 more conventional with the contact surface of aluminum nitride buffer layer 310 is higher to the corrosion resistance of chemical solution，Therefore，This structure is simultaneously by controlling the thickness of anodic aluminum oxide layer 200、Hole 210 diameter、Hole 210 distribution density and hole 210 spacing increase the contact area of anodised aluminium and aluminum nitride buffer layer 310 further，Then make the semiconductor element that the present embodiment is formed in the sidewall corrosion process of chip processing procedure，The ability of chemically-resistant solution corrosion is higher，Reduce the chemical solution excessive erosion phenomenon to epitaxial layer 400，Improve chip yield.Preferably, the thickness of anodic aluminum oxide layer 200 is 5 ~ 100nm, and the diameter of hole 210 is that 1nm ~ 100nm, simultaneously hole 210 distribution density and hole spacing are respectively 1 × 108~1×1011cm-2、20~300nm.In addition, owing in hole 210 structure of anodic aluminum oxide layer 200, deposition has aluminium nitride material, compare Sapphire Substrate 100, the light sent from epitaxial layer 400 changes through the incident angle of aluminum nitride buffer layer 310 and anodic aluminum oxide layer 200 time, the luminous flux injecting substrate 100 reduces, and further increases the external quantum efficiency of light.GaN cushion 320 uses the chemical vapour deposition technique growth identical with epitaxial layer 400, reduces the polarity effect that the lattice mismatch of anodic aluminum oxide layer 200 and epitaxial layer 400 produces further.
The present embodiment also provides for the preparation method of a kind of semiconductor light-emitting elements, first provides a patterned sapphire substrate 100, deposits layer of metal Al layer in substrate 100 surface, and rear employing anode oxidation process forms anodic aluminum oxide layer 200；Sputtering sedimentation aluminum nitride buffer layer 310 is used on anodic aluminum oxide layer 200 surface, chemical vapor deposition nitride buffer layer 320, and N-type layer 410, luminescent layer 420 and the P-type layer 430 being deposited on gallium nitride layer 320 is used on aluminum nitride buffer layer 310.The anodic aluminum oxide layer 200 formed by anode oxidation process has higher consistency and flintiness, reduces angularity when subsequent epitaxial layer 400 grows；On the other hand, compared to conventional cushion 300, owing to anodic aluminum oxide layer 200 has higher high-compactness and hardness, semiconductor element is in the sidewall corrosion process of chip processing procedure, the corrosive power of chemically-resistant solution is higher, reduce the chemical solution excessive erosion phenomenon to epitaxial layer 400, improve chip yield.
It should be appreciated that above-mentioned specific embodiments is preferred embodiment of the present utility model, scope of the present utility model is not limited to this embodiment, and all any changes done according to this utility model, within all belonging to protection domain of the present utility model.
Claims (10)
1. a semiconductor light-emitting elements, at least include a substrate and the cushion being sequentially located on substrate and epitaxial layer, it is characterized in that: between described substrate and cushion, also include an anodic aluminum oxide layer, described anodic aluminum oxide layer has the pore space structure of periodic distribution, and described buffer layer deposition is in described hole structure and covers the surface of described anodic aluminum oxide layer.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: the hole diameter size of described anodic aluminum oxide layer is 1 ~ 100nm.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: the hole distribution density of described anodic aluminum oxide layer is 1 × 108~1×1011cm-2。
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: the thickness of described anodic aluminum oxide layer is 5 ~ 100nm.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: the spacing between the adjacent holes of described anodic aluminum oxide layer is 20 ~ 300nm.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: the thickness of described cushion is more than the thickness of anodic aluminum oxide layer.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: described cushion is aluminum nitride buffer layer.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: described cushion includes aluminum nitride buffer layer and is deposited on the nitride buffer layer on described aluminum nitride buffer layer.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: described epitaxial layer at least includes: N-type layer, luminescent layer and P-type layer.
A kind of semiconductor light-emitting elements the most according to claim 1, it is characterised in that: described substrate is plain film substrate or patterned substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620288179.XU CN205488195U (en) | 2016-04-08 | 2016-04-08 | Semiconductor light emitting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620288179.XU CN205488195U (en) | 2016-04-08 | 2016-04-08 | Semiconductor light emitting element |
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| CN205488195U true CN205488195U (en) | 2016-08-17 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365063A (en) * | 2018-01-19 | 2018-08-03 | 浙江大学 | A kind of epitaxial structure improving GaN base LED luminous efficiencies |
| CN108598232A (en) * | 2018-01-19 | 2018-09-28 | 浙江大学 | A kind of sapphire pattern substrate structure improving GaN base LED luminous efficiencies |
| CN108847434A (en) * | 2018-06-27 | 2018-11-20 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method reducing epitaxial wafer warpage |
| CN109585612A (en) * | 2018-11-30 | 2019-04-05 | 湘能华磊光电股份有限公司 | The LED epitaxial growth method of improving luminous efficiency |
| CN112701197A (en) * | 2019-10-22 | 2021-04-23 | 东莞市中图半导体科技有限公司 | Graphical composite substrate, preparation method and LED epitaxial wafer |
-
2016
- 2016-04-08 CN CN201620288179.XU patent/CN205488195U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365063A (en) * | 2018-01-19 | 2018-08-03 | 浙江大学 | A kind of epitaxial structure improving GaN base LED luminous efficiencies |
| CN108598232A (en) * | 2018-01-19 | 2018-09-28 | 浙江大学 | A kind of sapphire pattern substrate structure improving GaN base LED luminous efficiencies |
| CN108598232B (en) * | 2018-01-19 | 2024-05-10 | 浙江大学 | Sapphire pattern substrate structure for improving light-emitting efficiency of GaN-based LED |
| CN108847434A (en) * | 2018-06-27 | 2018-11-20 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method reducing epitaxial wafer warpage |
| CN108847434B (en) * | 2018-06-27 | 2020-06-30 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for reducing warping of epitaxial wafer |
| CN109585612A (en) * | 2018-11-30 | 2019-04-05 | 湘能华磊光电股份有限公司 | The LED epitaxial growth method of improving luminous efficiency |
| CN112701197A (en) * | 2019-10-22 | 2021-04-23 | 东莞市中图半导体科技有限公司 | Graphical composite substrate, preparation method and LED epitaxial wafer |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |