CN111952479B - Flexible thin film packaging OLED structure and manufacturing method - Google Patents
Flexible thin film packaging OLED structure and manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 title claims description 182
- 238000002955 isolation Methods 0.000 claims abstract description 103
- 239000010410 layer Substances 0.000 claims description 319
- 239000010408 film Substances 0.000 claims description 146
- 238000005192 partition Methods 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 51
- 238000000151 deposition Methods 0.000 claims description 29
- 239000011521 glass Substances 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005538 encapsulation Methods 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 7
- 239000012044 organic layer Substances 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 9
- 238000009459 flexible packaging Methods 0.000 abstract description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- 238000007641 inkjet printing Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000005416 organic matter Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000004568 cement Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention discloses a flexible film packaging OLED structure and a manufacturing method thereof, wherein a side wall of an OLED component is sequentially wrapped with a second inorganic isolation wall, an organic isolation wall and a first inorganic isolation wall from inside to outside, the heights of the isolation walls are sequentially increased from inside to outside and are matched with a first organic film layer and a first inorganic film layer, so that a groove structure which can be used for placing the OLED component in and is in a stepped shape is formed, the organic film and the inorganic film are fully combined with each other, the problems that the contact surface characteristics of organic matters and inorganic matters at the side edge of the film packaging are different, the adhesiveness between the contact surfaces is poor, and the permeation of water/oxygen at the side edge of the film is easy to form are solved. The side edges of the device can be crashproof and pressure-proof, the effect of edge stress concentration is relieved, flexible packaging of the film is realized, and the yield of OLED device manufacturing is improved.
Description
Technical Field
The invention relates to the field of organic light-emitting display devices, in particular to a flexible film packaging OLED structure and a manufacturing method thereof.
Background
The organic light emitting diode (Organic Light Emitting Diode) OLED display has the advantages of self-luminescence, low power consumption, wide viewing angle, fast response speed, ultra-light and thin, good shock resistance, wide use temperature range, capability of realizing flexible display and large-area full-color display, and the like, and is known as a display device with the most development potential in the industry.
In the preparation of OLED devices, the light-emitting layer is usually a high molecular polymer, and the cathode adopts active metal magnesium and silver. The materials are sensitive to water/oxygen, so that the permeation of the water/oxygen to the OLED device and the service life of the OLED are greatly affected, so that the thin film encapsulation is very important to the stability and the service life of the OLED device, the encapsulation process reduces the permeation of the water/oxygen, and the thin film encapsulation has very important significance to the improvement of the manufacturing yield of the OLED device.
Traditional packaging techniques include:
1. laser kit packaging is laser packaging: after coating glass, drying, and then melting glass cement kit by laser to bond the two pieces of glass, so that the OLED device is between the two pieces of glass, and forming an independent and airtight space after the glass cement is solidified to isolate water and oxygen;
2. dam & Fill packaging is a lid package: firstly, preparing a passivation insulating layer by PECVD (plasma enhanced chemical vapor deposition), then preparing Dam glue and Fill glue by using a nozzle, and curing the glue to play a role in insulating water/oxygen.
However, conventional packaging techniques are suitable for hard screen packages and are not suitable for flexible screen packages that tend to be thin and lightweight and flexible. Therefore, thin film packaging is often used for flexible packaging.
The thin film packaging is that firstly, a Barrier layer is manufactured through PECVD, then a Buffer layer is deposited through PECVD or IJP (ink jet printing), 3-5 layers are sequentially prepared in sequence, the TFE (Thin Film Encapsulation) packaging is completed, inorganic thin films such as silicon nitride are mainly used for the Barrier layer in TFE (Thin Film Encapsulation) packaging, the Barrier layer plays a role in blocking water and oxygen, organic thin films such as high molecular polymers, resins and the like are mainly used for the Buffer layer, the defect of covering the inorganic layer is achieved, planarization is achieved, stress among the inorganic layers can be released, and flexible packaging is achieved.
The contact surface characteristics of organic matters and inorganic matters in the flexible packaging are different, the adhesiveness between the contact surfaces is poor, the permeation of water/oxygen at the side of a film is easy to form, and when the IJP is used for preparing an organic layer, abnormal phenomena such as uneven ink diffusion, irregular edges, ink flowing and the like are caused due to the coffee ring effect and the marangoni effect of the ink, the prior common technology adopts a barrier wall to prevent the ink from flowing, but the barrier wall is poor in adhesive force with the inorganic film and easy to separate, so that the permeation of water/oxygen at the side is easy to cause packaging failure, and the service life of an OLED device is influenced.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the flexible film encapsulation OLED structure and the manufacturing method thereof are provided, and the encapsulation failure problem that organic matters and inorganic matters are separated due to poor side adhesion caused by different characteristics is solved.
In order to solve the technical problems, the invention adopts the following technical scheme:
a flexible film packaging OLED structure comprises a glass substrate, a first inorganic partition wall, an organic partition wall, a second inorganic partition wall, and a first inorganic film layer, a first organic film layer, an OLED component, a buffer layer, a second inorganic film layer, a second organic film layer and a third inorganic film layer which are sequentially overlapped above the glass substrate from bottom to top;
the second inorganic isolation wall wraps the OLED assembly and the side wall of the buffer layer and is positioned between the first organic thin film layer and the second inorganic thin film layer;
the organic isolation wall wraps the second inorganic isolation wall and the side wall of the second inorganic thin film layer and is positioned between the first organic thin film layer and the second organic thin film layer;
the first inorganic partition wall wraps the organic partition wall, the first organic thin film layer and the side wall of the second organic thin film layer, and is located between the first inorganic thin film layer and the third inorganic thin film layer.
In order to solve the problems, the invention adopts another technical scheme that:
a manufacturing method of a flexible film packaging OLED comprises the following steps:
s1, sequentially depositing a silicon dioxide film layer and a first inorganic film layer above a glass substrate, coating a first organic film layer on the first inorganic film layer, preparing an OLED assembly on the first organic film layer, and evaporating a buffer layer on the OLED assembly;
s2, depositing a layer of second inorganic isolation wall which is leveled with the upper part of the buffer layer on the side wall of the OLED component and the buffer layer, and depositing a layer of second inorganic thin film layer on the upper part of the buffer layer and the second inorganic isolation wall;
s3, coating an organic isolation wall which is leveled with the upper part of the second inorganic thin film layer on the second inorganic isolation wall and the side wall of the second inorganic thin film layer, and printing a second organic thin film layer on the upper part of the second inorganic thin film layer and the organic isolation wall;
s4, depositing a layer of first inorganic isolation wall which is leveled with the upper part of the second organic thin film layer on the side walls of the organic isolation wall and the second organic thin film layer, and covering a third inorganic thin film layer on the upper parts of the second organic thin film layer and the first inorganic isolation wall.
The invention has the beneficial effects that: the utility model provides a flexible film encapsulation OLED structure and manufacturing method, OLED subassembly side wall has the second inorganic isolation wall, organic isolation wall and first inorganic isolation wall of parcel in proper order from inside to outside, these isolation wall's height is progressively increased in proper order from inside to outside and with first organic thin film layer and first inorganic thin film layer cooperation, form the recess structure that can supply OLED subassembly to place in and take the echelonment from this, can fully let organic film and inorganic film combine each other, it is different to solve the side organic matter of film encapsulation and the contact surface characteristic of inorganic matter at present, the relatively poor adhesion between the contact surface and the infiltration of easy formation film side water/oxygen problem, side organic isolation wall has the effect of alleviating side stress concentration, reduce the warpage of base plate, adopt isolation wall parcel form, the side completely keeps apart steam, avoid organic matter and inorganic matter to take off because the side adhesion nature is poor and the encapsulation inequality that breaks away that the side adhesion caused by the characteristic is different.
Drawings
FIG. 1 is a schematic cross-sectional view of a flexible thin film encapsulated OLED structure according to an embodiment of the present invention;
FIG. 2 is a top view of a groove structure in a flexible thin film encapsulated OLED structure according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for fabricating a flexible thin film packaged OLED according to a third embodiment of the present invention;
fig. 4 is a schematic flow chart of a method for manufacturing a flexible thin film packaged OLED according to a fourth embodiment of the present invention;
description of the reference numerals:
1. a glass substrate; 2. a silicon dioxide film layer; 3. a first inorganic thin film layer; 4. a first organic thin film layer; 5. an OLED display device; 6. an OLED device; 7. a buffer layer; 8. a second inorganic thin film layer; 9. a second organic thin film layer; 10. a third inorganic thin film layer; 11. a second inorganic barrier wall; 12. an organic barrier wall; 13. a first inorganic barrier wall.
Detailed Description
In order to describe the technical contents, the achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
Referring to fig. 1 to 2, a flexible thin film encapsulation OLED structure includes a glass substrate 1, a first inorganic partition wall 13, an organic partition wall 12, a second inorganic partition wall 11, and a first inorganic thin film layer 3, a first organic thin film layer 4, an OLED assembly, a buffer layer 7, a second inorganic thin film layer 8, a second organic thin film layer 9, and a third inorganic thin film layer 10 sequentially stacked from bottom to top over the glass substrate 1;
the second inorganic partition wall 11 wraps the OLED assembly and the side wall of the buffer layer 7, and is located between the first organic thin film layer 4 and the second inorganic thin film layer 8;
the organic partition wall 12 wraps the second inorganic partition wall 11 and the side wall of the second inorganic thin film layer 8, and is located between the first organic thin film layer 4 and the second organic thin film layer 9;
the first inorganic partition wall 13 wraps the organic partition wall 12, the first organic thin film layer 4 and the side wall of the second organic thin film layer 9, and is located between the first inorganic thin film layer 3 and the third inorganic thin film layer 10.
From the above description, the beneficial effects of the invention are as follows: the utility model provides a flexible film encapsulation OLED structure, OLED subassembly side wall has wrapped gradually second inorganic isolation wall 11 from inside to outside, organic isolation wall 12 and first inorganic isolation wall 13, these isolation wall's height increases gradually from inside to outside and cooperatees with first organic thin film layer 4 and first inorganic thin film layer 3, form the recess structure that can supply OLED subassembly to place in and take the echelonment, can fully let organic film and inorganic film combine together, the contact surface characteristic of the side organic matter of film encapsulation and inorganic matter is different at present, the adhesion between the contact surface is relatively poor and the infiltration of film side water/oxygen is formed easily, side organic isolation wall 12 has the effect of alleviating side stress concentration, reduce the warpage of base plate, adopt the structure that the spacer column wrapped up, the side completely keeps apart steam, avoid organic matter and inorganic matter to lead to the side adhesion poor and the encapsulation inefficacy problem that breaks away that the side adhesion is different because of the characteristic causes.
Further, the silicon dioxide film layer 2 is also included;
the silica thin film layer 2 is located between the glass substrate 1 and the first inorganic thin film layer 3.
As can be seen from the above description, there is also a silica thin film layer 2 between the glass substrate 1 and the first inorganic thin film layer 3; the silicon dioxide film layer 2 is used for preventing the organic isolation wall from being damaged by laser to the inside of the organic isolation wall during laser stripping, and further reflecting the light entering the OLED device 6, thereby further protecting the OLED device 6.
Further, the thickness of the first inorganic thin film layer 3 and the silicon dioxide thin film layer 2 ranges from 0.2um to 0.4um, respectively.
From the above description, the thicknesses of the first inorganic thin film layer 3 and the silicon oxide thin film layer 2 are designed within a certain range to better realize protection of the organic thin film layer.
Further, the thickness of the second inorganic thin film layer 8 and the third inorganic thin film layer 10 ranges between 0.1um and 0.15um;
the thickness of the first inorganic partition wall 13 ranges from 4.5um to 5um and the width ranges from 0.1um to 0.2 um;
the thickness of the organic partition wall 12 ranges from 4.5um to 5.5um and the width ranges from 0.1um to 0.2 um;
the thickness of the second inorganic partition wall 11 ranges from 3um to 5um and the width ranges from 0.1um to 0.2 um.
As is apparent from the above description, the thicknesses and widths of the second inorganic thin film layer 8 and the third inorganic thin film layer 10, and the thicknesses and widths of the first inorganic barrier wall 13, the second inorganic barrier wall 11, and the organic barrier wall 12 are appropriately sized so as to form stepped grooves and a stacked structure of alternating organic layers and inorganic layers.
Further, the second organic thin film layer 9 is an IJP prepared organic layer and has a thickness ranging from 1um to 2 um.
As is apparent from the above description, the second organic thin film layer 9 is prepared by IJP, i.e., inkjet printing in which fine ink droplets are ejected onto a target surface. The organic matter printed with IJP serves to fill the void defects in the inorganic thin film and provide a flat layer for the coverage of the third inorganic thin film layer 10.
Further, the structural materials of the first inorganic thin film layer 3, the second inorganic thin film layer 8, the third inorganic thin film layer 10, the second inorganic partition wall 11 and the first inorganic partition wall 13 are silicon nitride;
the structural materials of the first organic film layer 4 and the organic partition wall 12 are polyimide;
the structural material of the second organic thin film layer 9 is ink.
As can be seen from the above description, the inorganic layer is made of silicon nitride with high hardness and wear resistance, the first organic film layer 4 and the organic isolation wall 12 are made of polyimide with the strongest comprehensive performance, the side edge of the device has the functions of anti-collision, anti-compression, relieving edge stress concentration and reducing screen breakage risk, benign flexible packaging of the film is realized, the yield of OLED device manufacturing is improved, and when the organic layer is prepared by IJP, abnormal phenomena such as uneven ink diffusion, irregular edge, ink flowing and the like are caused due to the coffee ring effect and the Marangoni effect of the ink, and the polyimide isolation wall is formed in one step to prevent the flow of the organic ink.
Further, the OLED assembly comprises an OLED device 6 and an OLED display device 5;
the OLED device 6 is superimposed over the OLED display device 5.
As can be seen from the above description, the OLED assembly includes the OLED device 6 and the OLED display device 5.
Referring to fig. 3, a method for manufacturing a flexible thin film packaged OLED includes the following steps:
s1, sequentially depositing a silicon dioxide film layer 2 and a first inorganic film layer 3 above a glass substrate 1, coating a first organic film layer 4 on the first inorganic film layer 3, preparing an OLED assembly on the first organic film layer 4, and evaporating a buffer layer 7 on the OLED assembly;
s2, depositing a second inorganic isolation wall 11 which is leveled with the upper part of the buffer layer 7 on the side wall of the OLED assembly and the buffer layer 7, and depositing a second inorganic thin film layer 8 on the upper part of the buffer layer 7 and the second inorganic isolation wall 11;
s3, coating an organic isolation wall 12 which is leveled with the upper part of the second inorganic thin film layer 8 on the side walls of the second inorganic isolation wall 11 and the second inorganic thin film layer 8, and printing a second organic thin film layer 9 on the upper parts of the second inorganic thin film layer 8 and the organic isolation wall 12;
s4, depositing a layer of first inorganic isolation wall 13 which is leveled with the upper part of the second organic thin film layer 9 on the side walls of the organic isolation wall 12 and the second organic thin film layer 9, and covering a third inorganic thin film layer 10 on the upper parts of the second organic thin film layer 9 and the first inorganic isolation wall 13.
From the above description, the beneficial effects of the invention are as follows: the utility model provides a flexible film encapsulation OLED manufacturing method, make OLED subassembly side wall wrap up in proper order from inside to outside through a series of encapsulation technique have second inorganic isolation wall 11, organic isolation wall 12 and first inorganic isolation wall 13, these isolation wall's height is progressively increased in proper order from inside to outside and cooperate with first organic thin layer 4 and first inorganic thin layer 3, form can supply the OLED subassembly to place in and take the echelon recess structure from this, can fully let organic film and inorganic film combine each other, the side organic matter of film encapsulation at present and the contact surface characteristic of inorganic matter are different, the adhesion nature between the contact surface is relatively poor and the infiltration problem of film side water/oxygen is formed easily, side organic isolation wall 12 has the effect of alleviating side stress concentration, reduce the substrate warpage, adopt the encapsulation inefficacy that the spacer post wraps up, side is completely isolated, avoid organic matter and inorganic matter to lead to the side adhesion nature poor and break away from because of the characteristic is different.
Further, a silicon nitride film is deposited by PECVD to form the first inorganic film layer 3, the second inorganic film layer 8, the third inorganic film layer 10, the second inorganic partition wall 11 and the first inorganic partition wall 13;
coating a PI film with a paste coater to form the first organic film layer 4 and the organic barrier wall 12;
the IJP printing organic ink is used to form said second organic thin film layer 9.
As is clear from the above, the thin film is formed by a packaging technique corresponding to the thin film made of the inorganic material and the thin film made of the organic material.
Further, the steps S1 to S4 are replaced with:
s1, depositing a silicon dioxide film layer 2 above a glass substrate 1, depositing a first silicon nitride film with the thickness equal to the preset thickness of a first inorganic film layer 3 plus the thickness of a first inorganic isolation wall 13 on the silicon dioxide film layer 2, and exposing and developing the first silicon nitride film to form the first inorganic film layer 3 on the silicon dioxide film layer 2 and the first inorganic isolation wall 13 positioned on the periphery above the first inorganic film layer 3;
coating a PI film layer with the thickness equal to the thickness of the first organic film layer 4 plus the thickness of the organic isolation wall 12 on the first inorganic film layer 3, and exposing and developing the PI film layer to form the first organic film layer 4 on the first inorganic film layer 3 and the organic isolation wall 12 on the periphery above the first organic film layer 4;
preparing an OLED assembly in a groove structure formed by the first organic thin film layer 4 and the organic partition wall 12, and evaporating a buffer layer 7 on the OLED assembly;
s2, depositing a second inorganic isolation wall 11 which is leveled with the upper part of the buffer layer 7 in a gap between the OLED assembly and the side wall of the buffer layer 7 and the organic isolation wall 12, and depositing a second inorganic thin film layer 8 above the buffer layer 7 and the second inorganic isolation wall 11;
s3, printing a second organic film layer 9 above the second inorganic film layer 8 and the organic partition wall 12;
and S4, covering a third inorganic film layer 10 above the second organic film layer 9 and the first inorganic partition wall 13.
It can be seen from the above description that the above description is a preferred embodiment of a method for manufacturing a flexible thin film encapsulation OLED, which reduces the manufacturing processes of the organic isolation wall 12 and the first inorganic isolation wall 13, shortens the process time, and improves the product yield.
Referring to fig. 1 to 2, a first embodiment of the present invention is as follows:
the flexible film packaging OLED structure comprises a glass substrate 1, a first inorganic partition wall 13, an organic partition wall 12, a second inorganic partition wall 11, and a first inorganic film layer 3, a first organic film layer 4, an OLED component, a buffer layer 7, a second inorganic film layer 8, a second organic film layer 9 and a third inorganic film layer 10 which are sequentially overlapped from bottom to top above the glass substrate 1;
wherein the second inorganic partition wall 11 wraps the side wall of the OLED assembly and the buffer layer 7 and is located between the first organic thin film layer 4 and the second inorganic thin film layer 8, the organic partition wall 12 wraps the side wall of the second inorganic partition wall 11 and the second inorganic thin film layer 8 and is located between the first organic thin film layer 4 and the second organic thin film layer 9, the first inorganic partition wall 13 wraps the organic partition wall 12, the side wall of the first organic thin film layer 4 and the side wall of the second organic thin film layer 9 and is located between the first inorganic thin film layer 3 and the third inorganic thin film layer 10, the OLED assembly comprises the OLED device 6 and the OLED display device 5, and the OLED device 6 is overlapped above the OLED display device 5, the second inorganic isolation walls 11 on two sides and the first organic thin film layer 4 on the bottom form a first layer thin film surrounding structure and form a groove for placing an OLED component, the organic isolation walls 12 on two sides are combined with the first organic thin film layer 4 on the bottom to form a second layer thin film surrounding structure, the height of the organic isolation walls 12 is higher than that of the second inorganic isolation walls 11, the first inorganic isolation walls 13 on two sides and the first inorganic thin film layer 3 on the bottom form a third layer thin film surrounding structure, the height of the first inorganic isolation walls 13 is higher than that of the organic isolation walls 12, and therefore a three-layer stacked thin film surrounding structure is formed on the periphery of the OLED component, and the whole groove structure is stepped from outside to inside.
In the present embodiment, the thickness of the first inorganic thin film layer 3 ranges from 0.2um to 0.4um, preferably 0.3um; the thickness of the second inorganic thin film layer 8 and the third inorganic thin film layer 10 ranges between 0.1um and 0.15um, preferably 0.1um; the first inorganic partition wall 13 has a thickness ranging from 4.5um to 5um and a width ranging from 0.1um to 0.2um, preferably 4.6um, and preferably 0.15um; the thickness of the organic partition wall 12 ranges from 4.5um to 5.5um, preferably 4.5um, and the width ranges from 0.1um to 0.2um, preferably 0.15um; the thickness of the second inorganic partition wall 11 ranges from 3um to 5um and the width ranges from 0.1um to 0.2um, the thickness is preferably 4um, and the width is preferably 0.15um; the second organic thin film layer 9 is an organic layer prepared for IJP and has a thickness in the range of 1um to 2um, preferably 1.5um.
Also, in the present embodiment, the structural materials of the first inorganic thin film layer 3, the second inorganic thin film layer 8, the third inorganic thin film layer 10, the second inorganic partition wall 11 and the first inorganic partition wall 13 are silicon nitride, the structural materials of the first organic thin film layer 4 and the organic partition wall 12 are polyimide, and the structural material of the second organic thin film layer 9 is ink.
In this embodiment, the stack formed by surrounding the second inorganic thin film layer 8, the second organic thin film layer 9, the third electrodeless thin film layer 10 and the stepped groove structure is three layers, and in other equivalent embodiments, four or five layers may be used.
Referring to fig. 1 to 2, a second embodiment of the present invention is as follows:
the flexible thin film encapsulation OLED structure further comprises a silicon dioxide thin film layer 2 on the basis of the first embodiment;
the silicon dioxide thin film layer 2 is located between the glass substrate 1 and the first inorganic thin film layer 3, and the thickness of the silicon dioxide thin film layer 2 ranges from 0.2um to 0.4um, preferably 0.3um.
Referring to fig. 3, a third embodiment of the present invention is as follows:
a manufacturing method of a flexible film packaging OLED comprises the following steps:
s1, sequentially depositing a silicon dioxide film layer 2 and a first inorganic film layer 3 above a glass substrate 1, coating a first organic film layer 4 on the first inorganic film layer 3, preparing an OLED assembly on the first organic film layer 4, and evaporating a buffer layer 7 on the OLED assembly;
s2, depositing a layer of second inorganic isolation wall 11 which is leveled with the upper part of the buffer layer 7 on the side wall of the OLED component and the buffer layer 7, and depositing a layer of second inorganic thin film layer 8 on the buffer layer 7 and the upper part of the second inorganic isolation wall 11;
s3, coating an organic isolation wall 12 which is leveled with the upper part of the second inorganic thin film layer 8 on the side walls of the second inorganic isolation wall 11 and the second inorganic thin film layer 8, and printing a second organic thin film layer 9 on the upper parts of the second inorganic thin film layer 8 and the organic isolation wall 12;
s4, depositing a first inorganic isolation wall 13 which is leveled with the upper part of the second organic thin film layer 9 on the side walls of the organic isolation wall 12 and the second organic thin film layer 9, and covering a third inorganic thin film layer 10 on the upper parts of the second organic thin film layer 9 and the first inorganic isolation wall 13.
Wherein, a silicon nitride film is deposited by PECVD to form a first inorganic film layer 3, a second inorganic film layer 8, a third inorganic film layer 10, a second inorganic partition wall 11 and a first inorganic partition wall 13, a PI film is coated by a gumming machine to form a first organic film layer 4 and an organic partition wall 12, and an organic ink is printed by IJP to form a second organic film layer 9.
Referring to fig. 4, a fourth embodiment of the present invention is as follows:
based on the third embodiment, the steps S1 to S4 are replaced by:
s1, depositing a silicon dioxide film layer 2 above a glass substrate 1, depositing a first silicon nitride film with the thickness equal to the preset thickness of a first inorganic film layer 3 plus the thickness of a first inorganic isolation wall 13 on the silicon dioxide film layer 2, and exposing and developing the first silicon nitride film to form the first inorganic film layer 3 on the silicon dioxide film layer 2 and the first inorganic isolation wall 13 positioned on the periphery above the first inorganic film layer 3;
coating a PI film layer with the thickness equal to the thickness of the first organic film layer 4 plus the thickness of the organic isolation wall 12 on the first inorganic film layer 3, and exposing and developing the PI film layer to form the first organic film layer 4 on the first inorganic film layer 3 and the organic isolation wall 12 around the upper part of the first organic film layer 4; thus, compared with the third embodiment, the manufacturing process of the organic isolation wall 12 and the first inorganic isolation wall 13 is reduced, the process time is shortened, and the product yield is improved.
Preparing an OLED assembly in a groove structure formed by the first organic thin film layer 4 and the organic partition wall 12, and evaporating a buffer layer 7 on the OLED assembly;
s2, depositing a second inorganic isolation wall 11 which is leveled with the upper part of the buffer layer 7 in a gap between the OLED assembly and the side wall of the buffer layer 7 and the organic isolation wall 12, and depositing a second inorganic thin film layer 8 above the buffer layer 7 and the second inorganic isolation wall 11;
s3, printing a second organic film layer 9 above the second inorganic film layer 8 and the organic partition wall 12;
and S4, covering the third inorganic film layer 10 above the second organic film layer 9 and the first inorganic partition wall 13.
In summary, the invention provides a flexible thin film packaging OLED structure and a manufacturing method thereof, wherein a side wall of an OLED assembly is sequentially wrapped with a second inorganic isolation wall, an organic isolation wall and a first inorganic isolation wall from inside to outside, the heights of the isolation walls are sequentially increased from inside to outside and are matched with a first organic thin film layer and a first inorganic thin film layer, so that a groove structure which can be used for placing the OLED assembly in and is in a stepped shape is formed, the organic thin film and the inorganic thin film can be fully combined with each other, the problems that the contact surface characteristics of the organic matters and the inorganic matters at the side edge of the current thin film package are different, the adhesion between the contact surfaces is poor, and the water/oxygen permeation at the side edge of the thin film is easy to form are solved, the side edge of the device has the functions of anti-collision, anti-compression, substrate warpage reduction and edge stress concentration relief, flexible packaging of the thin film is realized, the yield of the OLED device manufacturing is improved, and the side edge is completely isolated in a mode of wrapping by a isolation column, and the problem of package failure caused by poor side edge adhesion due to the fact that the organic matters and the inorganic matters are different in characteristics is eliminated. The organic matters printed by the IJP play roles in filling the pore defects and the flat layers in the inorganic thin film, and abnormal phenomena such as uneven ink diffusion, irregular edges, ink flowing and the like can occur when the organic layers are prepared by the IJP, and the polyimide isolation wall is formed in one step to prevent the flow of the organic ink. The invention also provides another preparation method, which reduces the manufacturing process of the organic isolation wall and the first inorganic isolation wall, shortens the process time and improves the productivity of products.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent changes made by the specification and drawings of the present invention, or direct or indirect application in the relevant art, are included in the scope of the present invention.
Claims (7)
1. The utility model provides a flexible film encapsulation OLED structure which characterized in that: the Organic Light Emitting Diode (OLED) comprises a glass substrate, a first inorganic partition wall, an organic partition wall, a second inorganic partition wall, a first inorganic thin film layer, a first organic thin film layer, an OLED component, a buffer layer, a second inorganic thin film layer, a second organic thin film layer and a third inorganic thin film layer which are sequentially overlapped from bottom to top above the glass substrate;
the second inorganic isolation wall wraps the OLED assembly and the side wall of the buffer layer and is positioned between the first organic thin film layer and the second inorganic thin film layer;
the organic isolation wall wraps the second inorganic isolation wall and the side wall of the second inorganic thin film layer and is positioned between the first organic thin film layer and the second organic thin film layer; the second organic film layer is an organic layer prepared by IJP, and the thickness range is 1um to 2 um;
the first inorganic partition wall wraps the organic partition wall, the first organic thin film layer and the side wall of the second organic thin film layer, and is positioned between the first inorganic thin film layer and the third inorganic thin film layer;
the silicon dioxide film layer is also included; the silicon dioxide film layer is positioned between the glass substrate and the first inorganic film layer;
the structural materials of the first inorganic thin film layer, the second inorganic thin film layer, the third inorganic thin film layer, the second inorganic partition wall and the first inorganic partition wall are silicon nitride; the structural materials of the first organic film layer and the organic partition wall are polyimide; the structural material of the second organic film layer is ink.
2. The flexible thin film encapsulated OLED structure of claim 1, wherein: the thickness of the first inorganic film layer and the silicon dioxide film layer ranges from 0.2um to 0.4um respectively.
3. The flexible thin film encapsulated OLED structure of claim 1, wherein: the thickness of the second inorganic thin film layer and the third inorganic thin film layer ranges from 0.1um to 0.15um;
the first inorganic barrier wall has a thickness ranging from 4.5um to 5um and a width ranging from 0.1um to 0.2 um;
the thickness of the organic isolation wall ranges from 4.5um to 5.5um and the width ranges from 0.1um to 0.2 um;
the second inorganic barrier wall has a thickness ranging from 3um to 5um and a width ranging from 0.1um to 0.2 um.
4. The flexible thin film encapsulated OLED structure of claim 1, wherein: the OLED component comprises an OLED device and an OLED display device;
the OLED device is superimposed over the OLED display device.
5. The manufacturing method of the flexible film packaging OLED is characterized by comprising the following steps of:
s1, sequentially depositing a silicon dioxide film layer and a first inorganic film layer above a glass substrate, coating a first organic film layer on the first inorganic film layer, preparing an OLED assembly on the first organic film layer, and evaporating a buffer layer on the OLED assembly;
s2, depositing a layer of second inorganic isolation wall which is leveled with the upper part of the buffer layer on the side wall of the OLED component and the buffer layer, and depositing a layer of second inorganic thin film layer on the upper part of the buffer layer and the second inorganic isolation wall;
s3, coating an organic isolation wall which is leveled with the upper part of the second inorganic thin film layer on the second inorganic isolation wall and the side wall of the second inorganic thin film layer, and printing a second organic thin film layer on the upper part of the second inorganic thin film layer and the organic isolation wall;
s4, depositing a first inorganic isolation wall which is leveled with the upper part of the second organic thin film layer on the side walls of the organic isolation wall and the second organic thin film layer, and covering a third inorganic thin film layer on the upper parts of the second organic thin film layer and the first inorganic isolation wall.
6. The method for manufacturing the flexible thin film packaged OLED according to claim 5, wherein the steps of: depositing a silicon nitride film by PECVD to form the first inorganic film layer, the second inorganic film layer, the third inorganic film layer, the second inorganic partition wall and the first inorganic partition wall;
coating a PI film by using a gumming machine to form the first organic film layer and the organic partition wall;
and printing organic ink by using the IJP to form the second organic film layer.
7. The method for manufacturing the flexible thin film packaged OLED according to claim 5, wherein the steps of: the step S1 to the step S4 are replaced with:
s1, depositing a silicon dioxide film layer above a glass substrate, depositing a first silicon nitride film with the thickness equal to the preset thickness of the first inorganic film layer plus the thickness of a first inorganic isolation wall on the silicon dioxide film layer, and exposing and developing the first silicon nitride film to form a first inorganic film layer on the silicon dioxide film layer and first inorganic isolation walls on the periphery above the first inorganic film layer;
coating a PI film layer with the thickness equal to the thickness of a first organic film layer plus the thickness of an organic isolation wall on the first inorganic film layer, and exposing and developing the PI film layer to form a first organic film layer on the first inorganic film layer and the organic isolation wall around the upper part of the first organic film layer;
preparing an OLED assembly in a groove structure formed by the first organic thin film layer and the organic partition wall, and evaporating a buffer layer on the OLED assembly;
s2, depositing a second inorganic isolation wall which is leveled with the upper part of the buffer layer in a gap between the OLED component and the organic isolation wall and the side wall of the buffer layer, and depositing a second inorganic thin film layer above the buffer layer and the second inorganic isolation wall;
s3, printing a second organic film layer above the second inorganic film layer and the organic partition wall;
s4, covering a third inorganic film layer above the second organic film layer and the first inorganic partition wall.
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