CN115036442A - Preparation method of novel OLED device thin film packaging structure - Google Patents
Preparation method of novel OLED device thin film packaging structure Download PDFInfo
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- CN115036442A CN115036442A CN202210861393.XA CN202210861393A CN115036442A CN 115036442 A CN115036442 A CN 115036442A CN 202210861393 A CN202210861393 A CN 202210861393A CN 115036442 A CN115036442 A CN 115036442A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000002955 isolation Methods 0.000 claims abstract description 75
- 239000010408 film Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000001681 protective effect Effects 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 11
- 239000000872 buffer Substances 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 238000010000 carbonizing Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a preparation method of a novel OLED device thin film packaging structure, and relates to the technical field of OLED devices. The method adopts a 2-3-layer inorganic/organic laminated structure, an organic protective film is coated on a non-display area, an isolation column is prepared around an OLED device, the isolation column defines an area of a thin film packaging layer structure, and an inorganic thin film can be deposited on a glass substrate in a whole surface mode. The organic protective film serving as the protective isolation layer is stripped through later-stage laser stripping, the obtained OLED device has a film packaging region and an exposed binding region, the preparation step of a TFE mask is completely omitted, and the cost for periodically maintaining and cleaning the TFE mask is further saved.
Description
Technical Field
The invention relates to the technical field of OLED devices, in particular to a preparation method of a novel OLED device thin film packaging structure.
Background
The Organic Light Emitting Diode (OLED) display has the characteristics of self-luminous property, low power consumption, wide viewing angle, high response speed, ultralightness, ultrathin property, good shock resistance and the like, and the thin film packaging OLED device can realize the characteristics of flexibility, folding, bending and the like, so that the technology is widely applied to the field of flexible display.
The thin film Encapsulation (thin film Encapsulation) technology is abbreviated as TFE, and the TFE technology is a technology for protecting organic EL (electroluminescence) by sequentially preparing 3-5 layers of staggered coverage on a TFT substrate in sequence to isolate water and oxygen after depositing Barrier layer and buffer layer on the TFT substrate after evaporating organic EL. Wherein, in tfe (thin film encapsulation), barrier layer mostly adopts PECVD (chemical vapor deposition) machine to deposit inorganic thin film, such as silicon nitride, playing the role of blocking water and oxygen, Buffer layer mostly adopts IJP (inkjet printing) machine to coat organic thin film, such as high molecular polymer, resin, etc., its function is to cover the defect of inorganic layer, realize the planarization, can release the stress between the inorganic layers, realize flexible encapsulation.
The IJP printing is used for positioning and printing the organic film with high precision and high accuracy, so that a shade is not needed in the IJP process, a TFE shade is frequently used in an inorganic film manufactured by PECVD, and the TFE shade is divided into a hollow area and a non-hollow area; the non-hollow area is used for shielding an area where an inorganic film is not required to be deposited, and reserving an area for binding a COF (chip on film) and a PCB (printed circuit board) for the display panel; the hollow area is used for enabling the film to be deposited in the display area corresponding to the hollow area, so that the display device is isolated from water and oxygen, the service life of the display device is prolonged, and the luminous efficiency of the display device is improved.
In the TFE film packaging structure preparation process, need prepare 2 ~ 3 inorganic thin layer, and the vertical projection area of each layer of inorganic thin layer to the base plate will be bigger than the device structure region to the vertical area of base plate, in external environment, effectively blockked that water oxygen transversely penetrates from the side and gets into the device, it is effectual to encapsulate, but every inorganic thin layer of preparation need correspond a TFE shade (MASK), the TFE shade is prepared by Invar alloy, and is expensive, need outside customization, and need regular permutation to maintain.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a method for manufacturing a thin film encapsulation structure of a novel OLED device, in which an organic protective film is coated on a non-display region, and isolation pillars are manufactured around the OLED device to define a region of the thin film encapsulation layer structure, thereby saving the cost of TFE mask manufacturing, periodic maintenance and cleaning.
The invention is realized by the following steps:
a preparation method of a novel OLED device thin film packaging structure comprises the following steps:
coating a layer of flexible substrate on a glass substrate, and then preparing an OLED device on the flexible substrate;
secondly, on the basis of the first step, arranging an isolation column for limiting the area of the thin film packaging layer on the edge of the AA area on the glass substrate, then printing a protective isolation layer with the thickness lower than that of the isolation column on the binding area and the non-thin film packaging covering area, and reserving a stripping gap between the isolation column and the protective isolation layer;
step three, forming a film on the whole surface on the basis of the step two to form a first inorganic isolation layer, then printing an organic buffer layer in the packaging area, and then depositing a second inorganic isolation layer on the whole surface, wherein the first inorganic isolation layer and the second inorganic isolation layer cover the protective isolation layer;
and fourthly, carbonizing and stripping the protective isolation layer through laser to expose the binding area and the non-film packaging area, finally stripping the flexible substrate, and separating the flexible device from the glass substrate to obtain the required flexible OLED device with the film packaging structure.
Further, the isolation column is obtained by printing through an IJP machine.
Further, the height of the isolation column is 2-4 μm.
Further, the projection area of the organic buffer layer on the substrate is not smaller than the area of the OLED device, but not larger than the projection area of the first inorganic isolation layer.
Furthermore, the first inorganic isolation layer and the second inorganic isolation layer are made of SiNx, ALN or SiNC, and the thickness range of the first inorganic isolation layer and the second inorganic isolation layer is 0.6-1 mu m.
Further, the first inorganic isolating layer and the second inorganic isolating layer are the same in material and thickness and cover the protective isolating layer.
Furthermore, the protective isolation layer is a PI film, and the thickness range of the PI film is 0.5-2 μm.
Further, the width of the peeling gap is 2 μm to 6 μm.
The invention has the following advantages:
the method adopts 2-3 layers of inorganic/organic laminated structures, coats an organic protective film on a non-display area, and prepares the isolation column around the OLED device, wherein the isolation column limits the area of a film packaging layer structure, and the inorganic film can be deposited on the glass substrate in a whole surface manner. The organic protective film serving as the protective isolation layer is stripped through later-stage laser stripping, the obtained OLED device is a thin film packaging region and an exposed binding region, the preparation step of a TFE mask is completely omitted, and the cost for regularly maintaining and cleaning the TFE mask is further saved.
Drawings
The invention will be further described with reference to the following examples and figures.
FIG. 1 is a schematic structural diagram of a first step in a manufacturing process according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a second step in the manufacturing process according to the embodiment of the present invention;
FIG. 3 is a schematic top plan view of step two of the manufacturing process of the present invention;
FIG. 4 is a schematic structural diagram of step three of the manufacturing process according to the embodiment of the present invention;
FIG. 5 shows an OLED device obtained in step four of the fabrication process of an embodiment of the present invention.
Detailed Description
The embodiment of the invention provides a preparation method of a novel OLED device film packaging structure, which is characterized in that an organic protective film is coated on a non-display area, and isolation columns are prepared around an OLED device so as to limit the area of a film packaging layer structure, so that the cost of preparing a TFE mask, regularly maintaining and cleaning is saved.
The technical scheme in the embodiment of the invention has the following general idea:
adopt 2 ~ 3 inorganic/organic laminated structures of layer, contain glass substrate 1, PI substrate 2, OLED device 3, first inorganic barrier 4, organic buffer layer 5, the inorganic barrier 6 of second floor, because the first inorganic barrier 4 of layer is the same with the projection area of the inorganic barrier 6 of second floor on base plate 1, its preparation method abandons traditional MASK MASK film forming's mode, has avoided MASK preparation and later stage MASK to maintain abluent cost.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
In a possible implementation manner, the preparation method of the novel OLED device thin film encapsulation structure can be divided into the following four steps:
the method comprises the following steps: a layer of PI substrate is coated on the glass substrate 1, the PI substrate is cured to form a foldable and bendable flexible substrate 2, and then the OLED device 3 is manufactured on the flexible substrate 2, as shown in fig. 1.
PI as a flexible substrate, the material thereof is not limited to PET film (polyethylene terephthalate), PI film (polyimide), PEN film (polyethylene naphthalate), preferably PI film (polyimide), and the thickness thereof is in the range of 2 μm to 4 μm, preferably 3 μm, and PI is cured to form a foldable, bendable flexible substrate.
Step two: on the basis of the first step, the isolation column 7 with a certain height is printed at the edge of the AA area on the substrate, the protective isolation layer 8 with a smaller thickness is printed in the bonding area and the non-film packaging coverage area, and a peeling gap 9 is reserved between the isolation column and the protective isolation layer, as shown in fig. 2 and 3. The isolation column 7 is used for limiting the area of the thin film packaging layer, the protective isolation layer 8 is finally stripped, the binding area and the non-thin film packaging coverage area are exposed, and the stripping gap 9 is reserved to prevent the thin film in the thin film packaging area from being torn when the protective isolation layer 8 is stripped, so that the compactness of the TFE structure is ensured.
The isolation column 7 is made of an organic PI film (polyimide) with the thickness ranging from 2 micrometers to 4 micrometers, preferably 3.5 micrometers, and the annular isolation column 7 is arranged around the AA area to be beneficial to limiting the area of the thin film packaging lamination. The protective isolation layer 8 is made of PI film (polyimide) with thickness of 0.5-2 μm, preferably 1.6 μm, as the isolation column 7.
The purpose of printing the protective isolation layer 8 is to replace the effect of a MASK MASK, prevent the inorganic isolation layer of the film package from covering the binding region and the non-film package covering region in a whole surface manner, and burn and peel off the protective isolation layer 8 in a laser peeling mode at the end of the manufacturing process to expose the binding region and the non-film package region.
The reserved stripping gap 9 is used for preventing the isolating column 9 from being pulled and damaged by tearing of the protective isolating layer 8 and preventing a film in a film packaging region from being torn when the protective isolating layer 8 is stripped, so that the compactness of a TFE structure is ensured, and the reserved isolating column 9 is favorable for buffering mechanical stress from the side face and protecting the OLED flexible device 3. The width of the peeling gap is 2 μm to 6 μm, preferably 4 μm.
Step three: and secondly, forming a first inorganic isolation layer 4 by a whole surface film forming mode on the basis of the second step, printing an organic buffer layer 5 in the packaging area, wherein the projection area of the organic buffer layer 5 on the substrate is not smaller than the area of the OLED device 3 but not larger than the projection area of the first inorganic isolation layer 4, and then depositing a second inorganic isolation layer 6 by a whole surface mode, wherein the first inorganic isolation layer 4 and the second inorganic isolation layer 6 are both covered on a protective isolation layer 8, as shown in figure 4.
The first inorganic isolation layer 4 is formed by PECVD (chemical vapor deposition) blanket deposition, and the material of the first inorganic isolation layer 4 is not limited to SiNx, ALN, and SiNC, preferably SiNx, and the thickness thereof is in a range of 0.6 μm to 1 μm, preferably 0.8 μm.
The organic buffer layer 5 is printed by an IJP machine (polyimide) in the sealing area, the material of the organic buffer layer 5 is not limited to organic resin, CPI film (transparent polyimide), preferably CPI film (transparent polyimide), and the thickness thereof is in the range of 1 μm to 3 μm, preferably 2 μm; the projected area of the organic buffer layer 5 on the substrate is not smaller than the area of the OLED device 3 but not larger than the projected area of the first inorganic isolation layer 4.
The second inorganic isolation layer 6 and the first inorganic isolation layer 4 have the same process, material and thickness.
Step four: sequentially carbonizing and peeling the protective isolation layer 8 by LLO (laser lift off) to expose the binding region and the non-film packaging region, and finally peeling off the PI substrate to separate the flexible device from the rigid substrate to obtain the required flexible OLED device, as shown in FIG. 5; the method abandons the traditional MASK MASK plate shielding process and reduces the output of the process cost.
The method adopts a 2-3-layer inorganic/organic laminated structure, an organic protective film is coated on a non-display area, and isolation columns are prepared around an OLED device, wherein the isolation columns limit the area of a thin film packaging layer structure, and an inorganic thin film can be deposited on a glass substrate in a whole surface manner. The organic protective film serving as the protective isolation layer is stripped through later-stage laser stripping, the obtained OLED device is a thin film packaging region and an exposed binding region, the preparation step of a TFE mask is completely omitted, and the cost for regularly maintaining and cleaning the TFE mask is further saved.
Although specific embodiments of the invention have been described above, it will be understood by those skilled in the art that the specific embodiments described are illustrative only and are not limiting upon the scope of the invention, and that equivalent modifications and variations can be made by those skilled in the art without departing from the spirit of the invention, which is to be limited only by the appended claims.
Claims (8)
1. A preparation method of a novel OLED device thin film packaging structure is characterized by comprising the following steps:
coating a layer of flexible substrate on a glass substrate, and then preparing an OLED device on the flexible substrate;
secondly, on the basis of the first step, arranging an isolation column for limiting the area of the thin film packaging layer on the edge of the AA area on the glass substrate, then printing a protective isolation layer with the thickness lower than that of the isolation column on the binding area and the non-thin film packaging covering area, and reserving a stripping gap between the isolation column and the protective isolation layer;
step three, forming a film on the whole surface of the substrate to form a first inorganic isolation layer on the substrate in the step two, then printing an organic buffer layer on the packaging area, and then depositing a second inorganic isolation layer on the whole surface of the substrate, wherein the first inorganic isolation layer and the second inorganic isolation layer cover the protective isolation layer;
and fourthly, carbonizing and stripping the protective isolation layer through laser to expose the binding area and the non-film packaging area, finally stripping the flexible substrate, and separating the flexible device from the glass substrate to obtain the required flexible OLED device with the film packaging structure.
2. The method of claim 1, wherein: the isolation column is obtained by printing through an IJP machine.
3. The method according to claim 1 or 2, characterized in that: the height of the isolation column is 2-4 μm.
4. The method of claim 1, wherein: the projection area of the organic buffer layer on the substrate is not smaller than the area of the OLED device, but not larger than the projection area of the first inorganic isolation layer.
5. The method of claim 1, wherein: the first inorganic isolation layer and the second inorganic isolation layer are made of SiNx, ALN or SiNC, and the thickness range of the first inorganic isolation layer and the second inorganic isolation layer is 0.6-1 mu m.
6. The method according to claim 1 or 5, characterized in that: the first inorganic isolating layer and the second inorganic isolating layer are made of the same material and thickness and cover the protective isolating layer.
7. The method of claim 1, wherein: the protective isolation layer is a PI film, and the thickness range of the PI film is 0.5-2 mu m.
8. The method of claim 1, wherein: the width of the stripping gap is 2-6 μm.
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| CN202210861393.XA CN115036442A (en) | 2022-07-22 | 2022-07-22 | Preparation method of novel OLED device thin film packaging structure |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019019488A1 (en) * | 2017-07-24 | 2019-01-31 | 武汉华星光电半导体显示技术有限公司 | Flexible oled display device and fabrication method |
| CN111952479A (en) * | 2020-08-12 | 2020-11-17 | 福建华佳彩有限公司 | Flexible thin film packaging OLED structure and manufacturing method |
| US20210028251A1 (en) * | 2019-07-22 | 2021-01-28 | Chongqing Boe Display Technology Co., Ltd. | Oled display substrate, fabricating method thereof and display device |
| CN112993196A (en) * | 2021-03-04 | 2021-06-18 | 福建华佳彩有限公司 | Flexible packaging structure of OLED display panel and manufacturing method |
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- 2022-07-22 CN CN202210861393.XA patent/CN115036442A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019019488A1 (en) * | 2017-07-24 | 2019-01-31 | 武汉华星光电半导体显示技术有限公司 | Flexible oled display device and fabrication method |
| US20210028251A1 (en) * | 2019-07-22 | 2021-01-28 | Chongqing Boe Display Technology Co., Ltd. | Oled display substrate, fabricating method thereof and display device |
| CN111952479A (en) * | 2020-08-12 | 2020-11-17 | 福建华佳彩有限公司 | Flexible thin film packaging OLED structure and manufacturing method |
| CN112993196A (en) * | 2021-03-04 | 2021-06-18 | 福建华佳彩有限公司 | Flexible packaging structure of OLED display panel and manufacturing method |
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