CN106848087A - Display module encapsulating structure and preparation method thereof - Google Patents
Display module encapsulating structure and preparation method thereof Download PDFInfo
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- CN106848087A CN106848087A CN201510895919.6A CN201510895919A CN106848087A CN 106848087 A CN106848087 A CN 106848087A CN 201510895919 A CN201510895919 A CN 201510895919A CN 106848087 A CN106848087 A CN 106848087A
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- film layer
- display module
- bulge
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- base palte
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
Abstract
The application provides a kind of encapsulating structure of display module and preparation method thereof; it is related to display device technical field; can be used to prepare the related display device such as AMOLED; display module is mainly sealed into protection by using thin-film packing structure; i.e. using with blocking water oxygen characteristic and transparent inorganic thin film layer is sealed display module; and buffer film layer inside and outside stress by preparing organic module outside inorganic thin film layer; and when being applied to make flexible device, may also suppress the film layer caused by bending stress and come off.The bulge-structure that multiple-layer stacked is formed simultaneously can effectively suppress inorganic layer plated film diffusion effect, increase thin-film device side and block water the quantity of barricade, can effectively lift packaging effect.And play support metal mask version in coating process, prevent it to be damaged to real estate pattern.Furthermore, using thin-film package instead of for glass Frit glue encapsulation technologies, the mechanical strength of whole display part is effectively lifted.
Description
Technical field
The present invention relates to display device technical field, more particularly to a kind of display module encapsulation knot
Structure and preparation method thereof.
Background technology
In the display device of electronic equipment, the such as electrodeless light emitting diode for producing light source
Or the display electronic device such as Organic Light Emitting Diode (OLED) is display device energy (LED)
The Primary Component of no normal work, but above-mentioned electronic device be highly prone to it is wet in external environment condition
The erosion of gas and oxygen etc., therefore in order to ensure the normal operation of electronic device is needed to display electronics
Device carries out insulation blocking.
At present, mainly use glass cement (Frit) that cover-plate glass is fixed on array base palte,
Sealed with the display electronic device that will be arranged on array base palte；As shown in figure 1, traditional
Display module encapsulating structure in, display module 12 is provided with array base palte 11, pass through
Cover-plate glass 14 is pasted on array base palte 11 using glass cement 13, mould will be shown
Group 12 is sealed.
But, due to characteristic and cover-plate glass 14 and the array base palte 11 of glass cement 13 itself
Between there is the defect such as space so that the mechanical strength of the encapsulating structure shown in Fig. 1 is weaker,
Breakage is easily produced when external impact force is run into, especially the envelope above-mentioned when service life is tested
Assembling structure easily produce gap and so that the destructive gas in outside environment is invaded to encapsulation
In structure, above-mentioned display module 12 is caused to suffer erosion, or even display mould can be directly resulted in
Group 12 sustains damage in external impact, and then causes the display device cannot normal work.
The content of the invention
In view of above-mentioned technical problem, this application provides a kind of display module encapsulating structure, can answer
In for display device, the display module encapsulating structure includes：
Array base palte, surface is provided with display module；
Bulge-structure, is arranged on the surface of the array base palte and positioned at the display module
Periphery；
The first film layer, covers the display module and between the display module and the projection
The surface of the array base palte between structure, by display module sealing；
Second film layer, covers the part surface of the first film layer and the bulge-structure；
3rd film layer, covers second film layer, the bulge-structure and the array base
The part surface of plate；
4th film layer, covers the part surface of the 3rd film layer；And
5th film layer, covers the part table of the 4th film layer and the 3rd film layer
Face, the 4th film layer is sealed on the 3rd film layer.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The thin film transistor (TFT) being connected with the display module is additionally provided with the array base palte to show
Show circuit, be used to drive the display module to work.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The array base palte is low temperature polysilicon base plate.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The display module has for the light-emitting area of light injection and luminous relative to described
The backlight surface on surface；And
The backlight surface of the display module is fitted on the array base palte surface, and described first
Film layer covers the light-emitting area of the display module.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The display module is OLED display modules.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The bulge-structure is plural layers overlaying structure.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The material of the bulge-structure is the heterocycle polymer containing imine group and phenyl ring.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The thickness of the bulge-structure is more than the first film layer and second film layer
Thickness sum.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The material of the first film layer, the 3rd film layer and the 5th film layer is
The material of inorganic material, second film layer and the 4th film layer is organic material.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The material of the first film layer is the metal oxide with block water oxygen and transparent characteristic
Or silicon nitride.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The material of second film layer and the 4th film layer is with buffering and transparent characteristic
Crylic acid resin compound.
As a preferred embodiment, in above-mentioned display module encapsulating structure：
The material of the 3rd film layer and the 5th film layer is silicon nitride.
Present invention also provides a kind of preparation method of display module encapsulating structure, including：
Formation surface after array processes is provided with the array base palte of display module, and the display
Bulge-structure is also formed with the array base palte at module periphery；
Prepare the first film layer covering display module and between the display module with it is described
The surface of the array base palte between bulge-structure, by display module sealing；
It is in forming the second film layer on the exposed surface of the first film layer and described second thin
Film layer covers the part surface of the bulge-structure；
Prepare the 3rd film layer and cover second film layer, the bulge-structure and the array
The part surface of substrate；And
After forming the 4th film layer on the 3rd film layer, the covering of the 5th film layer is prepared
The part surface of the 4th film layer and the 3rd film layer, by the 4th film layer
It is sealed on the 3rd film layer.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
Shown in the thin film transistor (TFT) that is connected with the display module is prepared on the array base palte
Circuit, is used to drive the display module to work.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
The array base palte is low temperature polysilicon base plate.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
The display module has for the light-emitting area of light injection and luminous relative to described
The backlight surface on surface；And
The backlight surface of the display module is fitted on the array base palte surface, in described
The first film layer is prepared on the light-emitting area of display module.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
The display module is OLED display modules.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
It is superimposed to form the bulge-structure by plural layers in the array processes.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
The material of the bulge-structure is the heterocycle polymer containing imine group and phenyl ring.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
The thickness of the bulge-structure is more than the first film layer and second film layer
Thickness sum.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
Using deposit inorganic materials technique prepare the first film layer, the 3rd film layer and
5th film layer；And
Second film layer and the 4th film layer are prepared using organic material typography.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
There is the metal oxide of block water oxygen and transparent characteristic using atom layer deposition process deposition
Or silicon nitride prepares the first film layer.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
There is the crylic acid resin of buffering and transparent characteristic using ink-jet printing process spraying
Compound prepares second film layer and the 4th film layer.
As a preferred embodiment, the preparation method of above-mentioned display module encapsulating structure
In：
Using atom layer deposition process or chemical vapor deposition method or plasma enhanced chemical
Gas-phase deposition deposited silicon nitride prepares the 3rd film layer and the 5th film layer.
Above-mentioned technical proposal has the following advantages that or beneficial effect：
Encapsulating structure of display module in technical scheme in the application and preparation method thereof, can
The display device related for preparing AMOLED etc., mainly by using thin-film package knot
By display module, (such as OLED shows mould to structure (Thin Film Encapsulation Structure)
Group) sealed protection, i.e., using will be aobvious with block water oxygen characteristic and transparent inorganic thin film layer
Show that module is sealed, and film layer is buffered by preparing organic module outside inorganic thin film layer
Inside and outside stress, and when being applied to make flexible device, may also suppress caused by bending stress
Film layer comes off.The bulge-structure that multiple-layer stacked is formed simultaneously can effectively suppress the expansion of inorganic layer plated film
Effect is dissipated, is increased thin-film device side and is blocked water the quantity of barricade, can effectively lift packaging effect.
And play support metal mask version in coating process, prevent it to be damaged to real estate pattern.
Furthermore, using thin-film package replace glass Frit glue encapsulation technologies for, whole display part
Mechanical strength is effectively lifted.
Brief description of the drawings
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.However, appended
Accompanying drawing is merely to illustrate and illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is the encapsulating structure of conventional display module；
Fig. 2~7 are the schematic flow sheet of preparation display module encapsulating structure in the embodiment of the present application.
Specific embodiment
Encapsulating structure of display module provided herein and preparation method thereof, mainly passes through
Using thin film encapsulation technology (Thinning Film Encapsulation) to being arranged on array base
Display module (such as OLED shows) on plate is packaged, i.e., using with stop water oxygen
Inorganic thin film layer display module is sealed after, recycle organic thin with shock-absorbing capacity
Film layer covers above-mentioned inorganic thin film layer, to buffer film layer inside and outside stress, can be beneficial to flexible device
Part makes；Meanwhile, the bulge-structure for some strength is additionally provided with the periphery of display module,
Stop inorganic layer plated film diffusion effect, increase thin-film device side block-water effect.And in plated film work
Play support metal mask version in skill, prevent it to be damaged to real estate pattern.Furthermore, utilize
Thin-film package replaces for glass Frit glue encapsulation technologies, and the mechanical strength of whole display part is obtained
To effectively lifting.
Audio-video conversion device of the invention is carried out in detail with specific embodiment below in conjunction with the accompanying drawings
Describe in detail bright.
Embodiment one
Fig. 2~7 are the schematic flow sheet of preparation display module encapsulating structure in the embodiment of the present application；
As shown in Figure 2-5, this application provides a kind of preparation method of display module encapsulating structure, can
Comprise the following steps：
First, as shown in figure 1, being based on a underlay substrate (such as low temperature polycrystalline silicon (Low
Temperature Poly Silicon, abbreviation LTPS) substrate) on the basis of carry out display
Array (array) technique of part, to form array base palte 21；On above-mentioned array base palte 21
In the settable non-display area for thering is viewing area to be set with viewing area is abutted, in the array of viewing area
It is mainly used in the attaching and preparation of display device on substrate 21；Meanwhile, array base palte 21 it
It is upper or among be also provided with thin film transistor (TFT) display circuit, for drive it is follow-up prepare it is aobvious
Show that module works.
In addition, during above-mentioned array processes also in the non-display area close to viewing area
Bulge-structure 23 is formed on the surface of array base palte 21, the bulge-structure 23 can be multi-layer thin
Film stacked structure (Bank), such as can during above-mentioned array processes by using exposure,
The protruding figure (pattern) with certain altitude that the techniques such as development, etching are prepared, and
The bulge-structure 23 can be the shape such as bar column or band column.
Preferably, the material of above-mentioned bulge-structure 23 can be main component carbon containing (C), nitrogen
(N), the material of oxygen (O), the heterocycle polymer such as containing imido group and phenyl ring；Preferably
, the material of the bulge-structure 23 is PEI etc..
Secondly, display module (such as OLED is attached in the viewing area of above-mentioned array base palte 21
The illuminating modules such as display module) 22, and the display module 22 is aobvious with above-mentioned thin film transistor (TFT)
Show that circuit is connected, i.e., above-mentioned bulge-structure 23 is arranged on the periphery of display module 22, can use
In structures such as follow-up first and second film layers for preparing of display, to form the structure shown in Fig. 2；
There is certain gap (being mutually not in contact with each other) between the display module 22 and bulge-structure 23,
Give cruelly on the surface of the array base palte 21 between display module 22 and bulge-structure 23
Dew.
Preferably, above-mentioned display module 22 may include negative electrode, anode and be arranged on negative electrode with
The structures such as the organic luminous layer between anode；Meanwhile, above-mentioned display module 22 also has to be used
It is in the light-emitting area (upper surface i.e. shown in Fig. 3) of light injection and luminous relative to described
The backlight surface (lower surface i.e. shown in Fig. 3) on surface, the i.e. display module 22 are by upper
The backlight surface stated is attached on the surface of array base palte 21.
Afterwards, it is sequentially prepared the first film the 24, second film layer of layer using thin film encapsulation processes
25th, the 3rd film layer 26, the 4th film layer 27 and the 5th film layer 28, specifically：
First pass through using such as atomic deposition (Atomic Layer Deposition, abbreviation ALD)
Etc. process deposits such as aluminum oxide (AlOx), silicon nitride (SiNx), titanium oxide (TiO2) etc.
Inorganic material, the electrodeless film layer to be formed with block water oxygen and transparent characteristic, that is, form above-mentioned
The first film layer 24, and the above-mentioned display module 22 of covering of the first film layer 24 exposes
Surface and the surface in the array base palte 21 between display module 22 and bulge-structure 23
(the first film layer 24 is covered in the display mould that bulge-structure 23 is limited to give exposed surface
In the region of group 22, it is not extended to bulge-structure 23 away from the side of display module 22
In region).
Preferably, in order that must prepare the first film layer 24 have preferably sealing and it is transparent
Characteristic, can select aluminum oxide and prepares 300~500 angstroms of inorganic thin film layers of thickness；Meanwhile, the nothing
Machine film layer can be with least a portion of bulge-structure while 21 exposed surface of array base palte is covered
23 contacts.
Then using the technique spraying such as such as ink-jet print handsome (Ink Jet Printer, abbreviation IJP)
Such as crylic acid resin compound organic material, with the shape on above-mentioned the first film layer 24
Into organic thin film layer (monomer), i.e. the second film layer 25；Second film layer 25 can rise
(issue), elimination are answered the problems such as such as parcel defect particles (particle) is to mitigate DP
Power with lifted display device mechanical strength and improve the first film layer 24 film flatness
Effects such as (functions of similar flatness layer)；Preferably, having in order that obtaining the second film layer 25
Have good above-mentioned mitigation DP, eliminate stress and the lifting performance such as flatness, may be such that this
The thickness of two film layers 25 is selected in the range of 15000~20000 angstroms.
It should be noted that the second film layer 25 is not contacted with above-mentioned array base palte 21, and should
Second film layer 25 can cover the part table that above-mentioned bulge-structure 23 closes on display module side
Face, i.e., now the top end surface of bulge-structure 23, the side surface away from display module and face
The part surface of the side of nearly display module is exposed, i.e. height (the figure of bulge-structure 23
5 along the thickness perpendicular to display module light-emitting area direction) more than the first film layer 24 and the
(i.e. Fig. 5 is along perpendicular to display module light-emitting area direction for the thickness sum of two film layers 25
Thickness).
Afterwards, can be using such as chemical vapor deposition (chemical vapor deposition, letter
Claim CVD), atom layer deposition process (ALD) or plasma enhanced chemical vapor deposition
Techniques such as (Plasma Enhanced Chemical Vapor Deposition, abbreviation PECVD)
Deposition such as silicon nitride (SiNx), aluminum oxide (AlOx), silica (SiOx) etc. inorganic material
Material, with formed covering the surface of the second film layer 25 and the exposed surface of bulge-structure 23 it is inorganic thin
Film layer, i.e. the 3rd film layer 26, and the 3rd film layer 26 is by above-mentioned bulge-structure 23
The array base palte 21 of the bulge-structure 23 will be closed in the outside of bulge-structure 23 while parcel
Surface covered.
It should be noted that the 3rd film layer 26 is in contact with above-mentioned array base palte 21, and should
3rd film layer 26 not only covers the exposed surface of above-mentioned second film layer 25 and above-mentioned raised knot
The exposed surface of structure 23, can also cover battle array of the bulge-structure 23 away from the side of display module 22
The part surface (i.e. non-display area) of row substrate 21, to cause by the first film layer 24, the
The thin-film packing structure that two film layers 25 and the 3rd film layer 26 are constituted is by above-mentioned bulge-structure
Wrapped up.
Preferably, in order that obtaining the 3rd film layer 26 has good block water oxygen characteristic and film layer
Thickness, can prepare 5000~10000 angstroms of inorganic thin films of thickness as above-mentioned using aluminum oxide
The 3rd film layer 26, i.e., the 3rd film layer 26 across above-mentioned bulge-structure 23 simultaneously
It is covered on the surface of the non-display area of the surface of the second film layer 25 and array base palte 21.
Afterwards, can use with the identical technique of the second film layer 25 on the 3rd film layer 26
Prepare the 4th film layer 27, you can handsome (Ink Jet Printer, abbreviation IJP) using such as ink-jet print
Etc. technique spraying such as crylic acid resin compound organic material, with above-mentioned 3rd film layer
Organic thin film layer (monomer), i.e. the 4th film layer 27 are formed on 26；4th film
Layer 27 may also function as such as parcel defect particles (particle) to mitigate DP the problems such as (issue),
Stress is eliminated to lift the mechanical strength of display device and improve the flat of the film of the 3rd film layer 26
The effects, i.e., the structure shown in Fig. 6 such as whole degree (function of similar flatness layer)；Preferably, being
Cause that the 4th film layer 27 has good above-mentioned mitigation DP, eliminates stress and lifted smooth
The performances such as degree, may be such that the thickness of the 4th film layer 27 is also selected in 15000~20000 angstroms
In the range of.
It should be noted that the 4th film layer 27 is not also contacted with above-mentioned array base palte 21, i.e.,
4th film layer 27 only covers the part surface of above-mentioned 3rd film 26, and thin by the 3rd
The surface that film 26 is closed at the position of array base palte 21 is exposed, in order to follow-up preparation
Be sealed in 4th film layer 27 on the surface of the 3rd film layer 26 by the 5th film layer 28.
Finally, as shown in fig. 7, can also use such as chemical vapor deposition (chemical vapor
Deposition, abbreviation CVD), atom layer deposition process (ALD) or plasma enhancing
Learn vapour deposition (Plasma Enhanced Chemical Vapor Deposition, abbreviation
The process deposits such as silicon nitride (SiN such as PECVD)x), aluminum oxide (AlOx), silica
(SiOx) etc. inorganic material, with formed covering the surface of the 4th film layer 27 and the 3rd film layer
The inorganic thin film layer on 26 exposed surfaces, i.e. the 5th film layer 28, and the 5th film layer 28
The 4th above-mentioned film layer 27 is sealed on the surface of the 3rd film layer 26.
It should be noted that the 5th film layer 28 can connect with the surface of above-mentioned array base palte 21
Touch or do not contact, and the 5th film layer 28 not only to cover above-mentioned 4th film layer 27 exposed
Surface and the above-mentioned exposed surface of the 3rd film layer 26, can also cover and face on array base palte 21
Part surface (i.e. non-display area) at nearly position of 3rd film layer 26 is thin by first to cause
Film layer 24, the second film layer 25, the 3rd film layer 26, the 4th film layer 27 and the 5th are thin
The thin-film packing structure that film layer 28 is constituted is wrapped up above-mentioned bulge-structure.
Preferably, in order that obtaining the 5th film layer 28 has good block water oxygen characteristic and film layer
Thickness, can prepare 5000~10000 angstroms of inorganic thin films of thickness as above-mentioned using aluminum oxide
The 5th film layer 28.
In the present embodiment, above-mentioned thin-film packing structure (i.e. the first film layer 24, the are completed
Two film layers 25, the 3rd film layer 26, the 4th film layer 27 and the 5th film layer 28)
After preparation technology, will can subsequently be pasted for forming the device architectures such as the cover-plate glass of display device
It is fixed on the thin-film packing structure of above-mentioned formation, to be finally completed the preparation work of display device
Skill.
In the present embodiment, due to above-mentioned inorganic thin film (i.e. the first film layer the 24, the 3rd
The film layer 28 of film layer 26 and the 5th) with the oxygen sealing property that blocks water, and light transmission is excellent,
Therefore display module can be obtained into effective seal isolation makes it not to be subject in external environment condition
Water oxygen etc. corrode the infringement of gas；And it is arranged on the organic film between inorganic thin film (i.e.
Two film layers 25 and the 4th film layer 27) internal stress and external stress can be effectively buffered again,
The bulge-structure for being wrapped up by thin-film packing structure simultaneously can suppress inorganic coating process diffusion again, and
Support whole display part, so the encapsulating structure based on display module manufactured in the present embodiment and
Display device has excellent sealing property and stronger overall mechanical strength and flexible degree.
Embodiment two
Can be based on the basis of above-described embodiment one, as shown in fig. 7, in the embodiment of the present application also
There is provided a kind of display module encapsulating structure, and the display module encapsulating structure can be used to prepare respectively
Display device (such as OLED display device) is planted, above-mentioned display module encapsulating structure includes：
Array base palte 21, can be the substrate for completing array (array) technique, it may include but not office
It is limited to LTPS substrates etc.；The array base palte 21 can have the front face surface for setting device
(upper surface i.e. shown in Fig. 5) and lower surface (i.e. Fig. 5,6 relative to the upper surface
Shown in lower surface)；The material of the substrate is chosen as glass, it is also possible to hard substrate or
Flexible substrates to be formed in the array base palte 21, and the array base palte 21 or on can be set and have
For device architectures such as the drive circuits that drives display module luminous.
In addition, above-mentioned array base palte 21 is provided with the viewing area for setting display device structure
And close on the non-display area of the viewing area, and with the front face surface of the array base palte 21 of viewing area
On be provided with display module (such as OLED display modules) 22, the display module 22 has to be used
In the light-emitting area (upper surface i.e. shown in Fig. 5) of light injection and relative to the light-emitting area
Backlight surface (lower surface i.e. shown in Fig. 5), i.e., the backlight table of above-mentioned display module 22
Face is fitted in the front face surface of substrate 21.
Preferably, above-mentioned OLED display modules 22 can be organic light emission (OLED) module
Can be other kinds of illuminating module, such as may include negative electrode, anode and be arranged on negative electrode and anode
Between the structure such as organic luminous layer, and the display module 22 is connected with above-mentioned drive circuit.
Meanwhile, it is additionally provided with including plural layers in the front face surface of above-mentioned array base palte 22
The bulge-structure 23 (such as bar column or the projection with column shape) of superposition film (bank),
And the bulge-structure 23 may be disposed at the periphery of above-mentioned display module；In addition, bulge-structure 23
Can be with certain height in upper array processes by the technique preparation such as exposure, development, etching
The protruding figure of degree, and its material can be that main component has necessarily firmly including carbon, nitrogen, oxygen etc.
The material of degree, the preferably heterocycle polymer such as containing imido group and phenyl ring, polyetherimide
The materials such as amine.
The first film layer 24, covers the exposed surface of above-mentioned display module 22 and between display mould
The exposed surface of the institute of array base palte 21 between group 22 and bulge-structure 23, by display module
22 are sealed；The first film layer 24 can be inorganic thin film layer, and such as its material can be oxidation
The inorganic material such as aluminium, titanium oxide or silicon nitride, it will have excellent block water oxygen and transparent characteristic；
For example the first film layer 24 can be 300~500 angstroms of thickness oxidation aluminium films, and this is first thin
Film layer 24 to be contacted with the surface of above-mentioned array base palte 21 (it is corresponding, in bulge-structure
There is certain gap between 23 and display module 22, and above-mentioned the first film layer 24 is filled out
Fill and cover the gap on the surface of exposed array base palte 21).
Second film layer 25, covers above-mentioned the first film 24 exposed surface of layer and part is raised
The surface of structure 23；Second film layer 25 can have for crylic acid resin compound etc.
Machine material film, while it can wrap up defect particles (particle) mitigation DP problems, also
Stress boost device mechanical strength can be eliminated, while can also improve above-mentioned the first film layer 24
Surface smoothness (similar planarization layer)；But, (thickness can be for second film layer 25
Between 15000~20000 angstroms) by bulge-structure 23 stop not with above-mentioned array base palte 21
Contact, and the thickness of bulge-structure 23 is greater than the first film layer 24 and the second film layer 25
Thickness sum.
3rd film layer 26, the exposed surface of covering the second film layer 25, bulge-structure 23 are sudden and violent
The surface of dew and close on bulge-structure 23 and away from the array base palte 21 of the side of display module 22
Surface；The nothing such as the 3rd film layer 26 or silicon nitride, aluminum oxide or silica
Machine material film, and will be above-mentioned together with above-mentioned the first film the 24, second film layer 25 of layer
Bulge-structure 23 be wrapped in the front face surface of array base palte 21.
Preferably, in order that obtaining display device has good sealing property, above-mentioned the 3rd is thin
The material of film layer can be silicon nitride (SiN) film of about 5000~10000 angstroms of thickness of thickness.
4th film layer 27, covers on the part surface of above-mentioned 3rd film layer 26, and should
The fringe region on the surface of the 3rd film layer 26 (closes on array on the surface of the 3rd film layer 26
The region of substrate 11) exposed.
5th film layer 28, covers the exposed surface of above-mentioned 4th film layer 27 and the 3rd film
26 exposed surface of layer, the 4th film layer 27 is sealed in the surface of the 3rd film layer 26
On.
Preferably, the characteristic such as material and film layer structure size of the 4th above-mentioned film layer 27 can
Approximate or identical with the second above-mentioned film layer 25, such as the 4th film layer 27 is alternatively such as
The organic material films such as crylic acid resin compound, it can wrap up defect particles (particle)
While mitigating DP problems, moreover it is possible to stress boost device mechanical strength is eliminated, while may be used yet
Improve the surface smoothness (similar planarization layer) of the 3rd above-mentioned film layer 26；But, should
4th film layer 27 (thickness also can be between 15000~20000 angstroms) also not with above-mentioned battle array
Row substrate 21 is contacted.
Likewise, the characteristic such as material and film layer structure size of the 5th above-mentioned film layer 28 is then
Can be approximate or identical with the 3rd above-mentioned film layer 26, such as the material of the 5th film layer 28
Can be the inorganic material film such as silicon nitride, aluminum oxide or silica, and with above-mentioned first
Film layer 24, the second film layer 25, the 3rd film layer 26 and the 4th film layer 27 together will
Above-mentioned bulge-structure 23 is wrapped in the front face surface of array base palte 21, and in order that must show
The material that showing device has good sealing property, the 5th above-mentioned film layer 28 is alternatively thickness
About 5000~10000 angstroms of silicon nitride (SiN) films of thickness of degree.
It should be noted that the structure provided in the present embodiment can be based in above-described embodiment one
It is prepared by the method for record, therefore preparation technology, film layer material and film described in embodiment one
The technical characteristics such as the position relationship between layer may be applicable in the structure of this implementation, therefore herein just
Not tire out and state.
To sum up, display module encapsulating structure and preparation method thereof in the embodiment of the present application, by profit
Display module is directly packaged in base by the display module encapsulating structure formed with thin film encapsulation processes
On plate, and the display module encapsulating structure has block water oxygen characteristic and shock-absorbing capacity concurrently simultaneously, enters
And while display module sealing effectiveness is ensured, internal stress and outside can be effectively buffered again
Stress, film layer comes off when can avoid making flexible device, also may be such that formed after finished product aobvious
Show device architecture dropping, the produced external impact force such as be collided also can effectively be delayed
Punching, to substantially reduce display module because the stress concentration that is caused by external impact force etc. is caused
Split the generation of the defects such as screen, broken screen, and then improve the overall structural strength of display device,
The performance and yield of display device are prepared to effectively improve.Meanwhile, by thin-film packing structure bag
The bulge-structure wrapped up in can effectively suppress inorganic coating process diffusion again, while supporting whole display
Part, thus encapsulating structure and display device based on display module manufactured in the present embodiment have it is excellent
Different sealing property and stronger overall mechanical strength and flexible degree.
For a person skilled in the art, after reading described above, various changes and modifications
Undoubtedly it will be evident that.Therefore, appending claims should regard as cover it is of the invention true
Whole variations and modifications of sincere figure and scope.It is any and all etc. in Claims scope
The scope and content of valency, are all considered as still belonging to the intent and scope of the invention.
Claims (24)
1. a kind of display module encapsulating structure, it is characterised in that the display module encapsulation knot
Structure includes：
Array base palte, surface is provided with display module；
Bulge-structure, is arranged on the surface of the array base palte and positioned at the display module
Periphery；
The first film layer, covers the display module and between the display module and the projection
The surface of the array base palte between structure, by display module sealing；
Second film layer, covers the part surface of the first film layer and the bulge-structure；
3rd film layer, covers second film layer, the bulge-structure and the array base
The part surface of plate；
4th film layer, covers the part surface of the 3rd film layer；And
5th film layer, covers the part table of the 4th film layer and the 3rd film layer
Face, the 4th film layer is sealed on the 3rd film layer.
2. display module encapsulating structure as claimed in claim 1, it is characterised in that described
The thin film transistor (TFT) display circuit being connected with the display module is additionally provided with array base palte, is used
To drive the display module to work.
3. display module encapsulating structure as claimed in claim 2, it is characterised in that described
Array base palte is low temperature polysilicon base plate.
4. display module encapsulating structure as claimed in claim 1, it is characterised in that described
In display module encapsulating structure：
The display module has for the light-emitting area of light injection and luminous relative to described
The backlight surface on surface；And
The backlight surface of the display module is fitted on the array base palte surface, and described first
Film layer covers the light-emitting area of the display module.
5. display module encapsulating structure as claimed in claim 1, it is characterised in that described
Display module is OLED display modules.
6. display module encapsulating structure as claimed in claim 1, it is characterised in that described
Bulge-structure is plural layers overlaying structure.
7. display module encapsulating structure as claimed in claim 6, it is characterised in that described
The material of bulge-structure is the heterocycle polymer containing imine group and phenyl ring.
8. display module encapsulating structure as claimed in claim 1, it is characterised in that described
The thickness of bulge-structure is more than the thickness sum of the first film layer and second film layer.
9. display module encapsulating structure as claimed in claim 1, it is characterised in that described
The material of the first film layer, the 3rd film layer and the 5th film layer is inorganic material
The material of material, second film layer and the 4th film layer is organic material.
10. display module encapsulating structure as claimed in claim 9, it is characterised in that described
The material of the first film layer is metal oxide or silicon nitride with block water oxygen and transparent characteristic.
11. display module encapsulating structures as claimed in claim 9, it is characterised in that described
The material of the second film layer and the 4th film layer is the acrylic acid with buffering and transparent characteristic
Resinae compound.
12. display module encapsulating structures as claimed in claim 9, it is characterised in that described
The material of the 3rd film layer and the 5th film layer is silicon nitride.
A kind of 13. preparation methods of display module encapsulating structure, it is characterised in that methods described
Including：
Formation surface after array processes is provided with the array base palte of display module, and the display
Bulge-structure is also formed with the array base palte at module periphery；
Prepare the first film layer covering display module and between the display module with it is described
The surface of the array base palte between bulge-structure, by display module sealing；
It is in forming the second film layer on the exposed surface of the first film layer and described second thin
Film layer covers the part surface of the bulge-structure；
Prepare the 3rd film layer and cover second film layer, the bulge-structure and the array
The part surface of substrate；And
After forming the 4th film layer on the 3rd film layer, the covering of the 5th film layer is prepared
The part surface of the 4th film layer and the 3rd film layer, by the 4th film layer
It is sealed on the 3rd film layer.
The preparation method of 14. display module encapsulating structures as claimed in claim 13, its feature
It is to be shown in the thin film transistor (TFT) that is connected with the display module is prepared on the array base palte
Circuit, is used to drive the display module to work.
The preparation method of 15. display module encapsulating structures as claimed in claim 14, its feature
It is that the array base palte is low temperature polysilicon base plate.
The preparation method of 16. display module encapsulating structures as claimed in claim 13, its feature
It is, in methods described：
The display module has for the light-emitting area of light injection and luminous relative to described
The backlight surface on surface；And
The backlight surface of the display module is fitted on the array base palte surface, in described
The first film layer is prepared on the light-emitting area of display module.
The preparation method of 17. display module encapsulating structures as claimed in claim 13, its feature
It is that the display module is OLED display modules.
The preparation method of 18. display module encapsulating structures as claimed in claim 13, its feature
It is to be superimposed to form the bulge-structure by plural layers in the array processes.
The preparation method of 19. display module encapsulating structures as claimed in claim 13, its feature
It is that the material of the bulge-structure is the heterocycle polymer containing imine group and phenyl ring.
The preparation method of 20. display module encapsulating structures as claimed in claim 13, its feature
It is that the thickness of the bulge-structure is more than the first film layer and second film layer
Thickness sum.
The preparation method of 21. display module encapsulating structures as claimed in claim 13, its feature
It is, in methods described：
Using deposit inorganic materials technique prepare the first film layer, the 3rd film layer and
5th film layer；And
Second film layer and the 4th film layer are prepared using organic material typography.
The preparation method of 22. display module encapsulating structures as claimed in claim 21, its feature
It is that there is the metal oxide of block water oxygen and transparent characteristic using atom layer deposition process deposition
Or silicon nitride prepares the first film layer.
The preparation method of 23. display module encapsulating structures as claimed in claim 21, its feature
It is that there is the crylic acid resin of buffering and transparent characteristic using ink-jet printing process spraying
Compound prepares second film layer and the 4th film layer.
The preparation method of 24. display module encapsulating structures as claimed in claim 21, its feature
It is, using atom layer deposition process or chemical vapor deposition method or plasma enhanced chemical
Gas-phase deposition deposited silicon nitride prepares the 3rd film layer and the 5th film layer.
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