CN210805776U - Silicon-based micro LED chip - Google Patents
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- CN210805776U CN210805776U CN201921999200.7U CN201921999200U CN210805776U CN 210805776 U CN210805776 U CN 210805776U CN 201921999200 U CN201921999200 U CN 201921999200U CN 210805776 U CN210805776 U CN 210805776U
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Abstract
The utility model discloses a silicon-based miniature LED chip, include silicon substrate, a plurality of light-emitting structure, cut groove and organic insulating layer, cut the groove setting between light-emitting structure. The utility model discloses a silicon substrate replaces the sapphire substrate, has avoided the sapphire substrate because gallium nitride absorbs the N that the laser after decomposes the production when laser is peeled off2Damage to the gallium nitride material and the micro LED chip. Furthermore, the utility model discloses a silicon substrate is removed to physical grinding and chemical attack two-step method, when effectively getting rid of the silicon substrate, can protectThe light emitting structure is not damaged, and the removal yield and reliability of the substrate are improved.
Description
Technical Field
The utility model relates to a light emitting diode technical field especially relates to a miniature LED chip of silica-based.
Background
Currently, the mainstream screen display technology mainly focuses on LCD and AMOLED, wherein LCD has a long service life, but needs backlight, has low contrast, and cannot realize bending; the AMOLED screen is self-luminous and has high contrast, but the AMOLED screen has the problem of limited service life of organic materials, mainly the problem of screen burning.
The size of a chip of the MicroLED is smaller than 100 mu m, and the size of a single chip even can not reach 1% of that of the original LED chip. The LED display screen is a high-density micro LED array with small scale integrated on a chip, and each pixel of the LED display screen can be addressed and driven to light independently. The LED display screen is made of inorganic materials, the service life and the stability of the LED display screen are obviously superior to those of an AMOLED LED display screen, the phenomena of screen burning, aging and the like are not easy to occur, and meanwhile, the LED display screen also has the self-luminous characteristic, so that the AMOLED display screen has the same high contrast as the AMOLED display screen.
The micro LED has the advantages of high brightness, ultrahigh resolution, color saturation and high luminous efficiency, and cannot be influenced by water vapor, oxygen or high temperature, so that the micro LED has obvious advantages in the aspects of stability, service life, working temperature and the like.
In the manufacturing process of the micro LED, the traditional sapphire substrate is removed, and the light emitted by the LED chip is prevented from generating dispersed light crosstalk in the transparent sapphire material, so that the method is an important technology. The traditional sapphire substrate removing method is based on the growth of a GaN epitaxial material on a sapphire substrate, and the sapphire substrate is separated from GaN by utilizing a laser stripping mode, so that the substrate is removed. However, this substrate removal method is used for laser lift-off because GaN decomposes N generated after absorbing laser light2The damage to the GaN material and the MicroLED chip causes the chip to leak electricity or break, and the reliability of the LED chip is greatly influenced. In addition, after the sapphire substrate is removed, the size of the Micro LED is less than 100 μm, which is far beyond the precision limit of the traditional cutting and splitting equipment, so the cutting and separating technology is a big bottleneck for restricting the development of the Micro LED.
Disclosure of Invention
The utility model aims to solve the technical problem that a silicon-based miniature LED chip is provided, replaces the sapphire substrate with the silicon substrate, reduces the lattice mismatch, is convenient for get rid of the substrate.
In order to solve the technical problem, the utility model provides a silicon-based micro LED chip, which comprises a silicon substrate, a plurality of light-emitting structures, a cutting groove and an organic insulating layer, wherein the cutting groove is arranged between the light-emitting structures;
the light-emitting structure comprises an etching barrier layer, a first semiconductor layer, an active layer, a second semiconductor layer, an isolation groove, a first electrode and a second electrode, wherein the etching barrier layer is arranged between a silicon substrate and the first semiconductor layer, the isolation groove is etched to the first semiconductor layer to divide the light-emitting structure into a first light-emitting structure and a second light-emitting structure, the first electrode is arranged on the first light-emitting structure and extends to the first semiconductor layer, the second electrode is arranged on the second light-emitting structure, the etching barrier layer comprises a plurality of high aluminum layers and low aluminum layers which are alternately formed, and the aluminum content of the high aluminum layers is higher than that of the low aluminum layers;
the organic insulating layer covers the side walls of the first light-emitting structure and the second light-emitting structure and is filled in the isolation groove to protect the light-emitting structures.
As a refinement of the above, each cycle comprises at least one high aluminum layer and at least one low aluminum layer.
As an improvement of the scheme, the total thickness of the high aluminum layer and the low aluminum layer in each period is 10-200 nm.
As an improvement of the scheme, the etching barrier layer is formed by alternately forming high aluminum layers and low aluminum layers in 2-20 periods.
As an improvement of the above scheme, the light emitting structure further includes a reflective layer and a passivation layer, the reflective layer is disposed on the second semiconductor layer to reflect light emitted from the active layer to one side of the etching barrier layer for emission, and the passivation layer is disposed on a sidewall of the second light emitting structure to isolate the first light emitting structure from the second light emitting structure.
As a modification of the above, the organic insulating layer is made of an organic insulating material.
As an improvement of the above scheme, the organic insulating layer is made of silica gel, photoresist, resin or polyimide.
Implement the utility model discloses, following beneficial effect has:
the utility model discloses a silicon substrate replaces the sapphire substrate, has avoided the sapphire substrate because gallium nitride absorbs the N that the laser after decomposes the production when laser is peeled off2Damage to the gallium nitride material and the micro LED chip. Furthermore, the utility model discloses a silicon substrate is removed with the chemical attack two-step method to the physical grinding, when effectively getting rid of the silicon substrate, can protect light-emitting structure not destroyed, has improved removal yield and the reliability of substrate, provides important guarantee for the extensive application of miniature LED chip on encapsulation, drive, demonstration.
Because the utility model discloses a silicon substrate grows the gallium nitride epitaxial layer, reduces the lattice mismatch between silicon substrate and the gallium nitride epitaxial layer, the utility model discloses form one deck etching barrier layer between silicon substrate and first semiconductor layer. The utility model discloses the epitaxial lattice mismatch of silica-based can be reduced to the low aluminium lamination on sculpture barrier layer, reduces dislocation density, furtherly, the utility model discloses the sculpture barrier layer structure of formula of folding (high aluminium lamination and low aluminium lamination alternate growth) is favorable to epitaxial stress's matching to be adjusted, improves the crystal quality. In addition, when the micro LED chip is subjected to original silicon substrate wet etching, the high aluminum layer of the etching barrier layer can prevent the infiltration of an etching solution and protect GaN epitaxy from being attacked by the etching solution.
The utility model discloses a cut the luminous structure that the epitaxial material cutting that the groove will be on silicon substrate formed a plurality of independent sizes and is less than 100 mu m, makes every miniature LED chip form independent device each other, and the back is got rid of to the silicon substrate, and each miniature LED chip just can autosegregation, has effectively solved the problem that the miniature LED that the size is less than 100 mu m can't cut the separation.
The utility model discloses and fall into first light-emitting structure and second light-emitting structure with light-emitting structure through the isolation groove, form first electrode on first light-emitting structure, form the second electrode on second light-emitting structure, can make first electrode and second electrode be in on same plane completely like this, guarantee chip welded reliability, reduce the void ratio.
The utility model discloses an organic insulation layer protects the chip, guarantees that the in-process chip inner structure and the metal level that silicon substrate wet corrosion got rid of are not destroyed by corrosive solution.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based micro LED chip of the present invention;
fig. 2a is a schematic diagram of the present invention after forming a plurality of light emitting structures and cutting grooves on a silicon substrate;
fig. 2b is a schematic view of the jig of the present invention;
fig. 2c is a schematic view illustrating the light emitting structure of the present invention being fixed to the jig;
fig. 2d is a schematic diagram of the light-emitting structure of the present invention after the silicon substrate is removed;
fig. 2e is a schematic view of the present invention bonding a temporary substrate to a light emitting structure;
fig. 2f is a schematic view of the present invention after removal of the temporary substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the present invention provides a silicon-based micro LED chip, which includes a silicon substrate 10, a plurality of light emitting structures 20, a cutting groove 23, and an organic insulating layer 30, wherein the cutting groove 23 is disposed between the light emitting structures 20 to separate the light emitting structures 20.
The light emitting structure 20 includes an etching barrier layer 201, a first semiconductor layer 202, an active layer 203, a second semiconductor layer 204, and an isolation trench 24, the etching barrier layer 201 is disposed between the silicon substrate 10 and the first semiconductor layer 202, and the isolation trench 24 is etched to the first semiconductor layer 202 to divide the light emitting structure 20 into a first light emitting structure 21 and a second light emitting structure 22.
The light emitting structure 20 further includes a first electrode 207 and a second electrode 208, the first electrode 207 is disposed on the first light emitting structure 21 and extends onto the first semiconductor layer 202, and the second electrode 208 is disposed on the second light emitting structure 22.
The light emitting structure 20 further includes a reflective layer 205 and a passivation layer 206, the reflective layer 205 is disposed on the second semiconductor layer 204 to reflect light emitted from the active layer 202 to the first semiconductor layer 202 side for emission, and the passivation layer 206 is disposed on a sidewall of the second light emitting structure 22 to isolate the first light emitting structure 21 from the second light emitting structure 22.
The first semiconductor layer, the active layer and the second semiconductor layer of the present invention are mainly made of gallium nitride material. Preferably, the etching barrier layer 201 includes a plurality of high aluminum layers and low aluminum layers formed alternately, the aluminum content of the high aluminum layers is greater than or equal to 70%, and the aluminum content of the high aluminum layers of the low aluminum layers is less than or equal to 60%.
Preferably, the aluminum content of the high aluminum layer is 70-99%, and the aluminum content of the low aluminum layer is 30-60%.
Preferably, the etching barrier layer 201 is formed by alternately forming high aluminum layers and low aluminum layers in 2-20 periods, each period comprises at least one high aluminum layer and at least one low aluminum layer, and if the thickness of the etching barrier layer is less than 2 periods, the thickness is too thin, and the etching barrier layer cannot prevent corrosive solution generated when the substrate is removed from entering into the epitaxial and chip materials; if the thickness of the etching barrier layer is greater than 20 cycles, the thickness is too thick, and light can be absorbed, thereby affecting the light extraction efficiency.
The total thickness of the high aluminum layer and the low aluminum layer in each period is 10-200 nm. Wherein, the thickness ratio of high aluminium layer and low aluminium layer is little to the corrosion resistance influence on the sculpture barrier layer, and arbitrary thickness ratio all can be applied to the utility model discloses.
The first electrode and the second electrode are both composed of metal layers. The metal layer is made of one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr and In. Preferably, the metal layer is formed by adopting a laminated metal deposition mode, and the internal stress between metals is effectively eliminated.
The organic insulating layer 30 covers sidewalls of the first and second light emitting structures 21 and 22, and is filled in the isolation groove 24 to protect the light emitting structures. When the wet process corrodes the silicon substrate, the utility model discloses an organic insulating layer can protect light-emitting structure not corroded the destruction.
The utility model discloses an organic insulation layer 30 is made by organic insulating material, preferred, organic insulating material is silica gel, photoresist, resin, polyimide etc. and has good insulating and protective properties's organic material.
The utility model discloses a silicon substrate replaces the sapphire substrate, has avoided the sapphire substrate because gallium nitride absorbs the N that the laser after decomposes the production when laser is peeled off2Damage to the gallium nitride material and the micro LED chip. Furthermore, the utility model discloses a silicon substrate is removed with the chemical attack two-step method to the physical grinding, when effectively getting rid of the silicon substrate, can protect light-emitting structure not destroyed, has improved removal yield and the reliability of substrate, provides important guarantee for the extensive application of miniature LED chip on encapsulation, drive, demonstration.
Because the utility model discloses a silicon substrate grows the gallium nitride epitaxial layer, reduces the lattice mismatch between silicon substrate and the gallium nitride epitaxial layer, the utility model discloses form one deck etching barrier layer between silicon substrate and first semiconductor layer. The utility model discloses the epitaxial lattice mismatch of silica-based can be reduced to the low aluminium lamination on sculpture barrier layer, reduces dislocation density, furtherly, the utility model discloses the sculpture barrier layer structure of formula of folding (high aluminium lamination and low aluminium lamination alternate growth) is favorable to epitaxial stress's matching to be adjusted, improves the crystal quality. In addition, when the micro LED chip is subjected to original silicon substrate wet etching, the high aluminum layer of the etching barrier layer can prevent the infiltration of an etching solution and protect GaN epitaxy from being attacked by the etching solution.
The utility model discloses a cut the luminous structure that the epitaxial material cutting that the groove will be on silicon substrate formed a plurality of independent sizes and is less than 100 mu m, makes every miniature LED chip form independent device each other, and the back is got rid of to the silicon substrate, and each miniature LED chip just can autosegregation, has effectively solved the problem that the miniature LED that the size is less than 100 mu m can't cut the separation.
The utility model discloses and fall into first light-emitting structure and second light-emitting structure with light-emitting structure through the isolation groove, form first electrode on first light-emitting structure, form the second electrode on second light-emitting structure, can make first electrode and second electrode be in on same plane completely like this, guarantee chip welded reliability, reduce the void ratio.
The utility model discloses an organic insulation layer protects the chip, guarantees that the in-process chip inner structure and the metal level that silicon substrate wet corrosion got rid of are not destroyed by corrosive solution.
Correspondingly, the utility model also provides a manufacturing method of silicon-based miniature LED chip, including following step:
firstly, forming a plurality of light-emitting structures and cutting grooves on a silicon substrate;
referring to fig. 2a, the light emitting structure 20 of the present invention includes an etching blocking layer 201, a first semiconductor layer 202, an active layer 203, a second semiconductor layer 204 and an isolation trench 24, wherein the isolation trench 24 is etched to the first semiconductor layer 202 to divide the light emitting structure 20 into a first light emitting structure 21 and a second light emitting structure 22, and the cutting trench 23 is etched to the surface of the silicon substrate 10 to separate the light emitting structure 20.
The light emitting structure 20 further includes a first electrode 207 and a second electrode 208, the first electrode 207 is disposed on the first light emitting structure 21 and extends onto the first semiconductor layer 202, and the second electrode 208 is disposed on the second light emitting structure 208.
The light emitting structure 20 further includes a reflective layer 205 and a passivation layer 206, the reflective layer 205 is disposed on the second semiconductor layer 204 to reflect light emitted from the active layer 202 to the first semiconductor layer 202 side for emission, and the passivation layer 206 is disposed on a sidewall of the second light emitting structure 22 to isolate the first light emitting structure 21 from the second light emitting structure 22.
Specifically, the manufacturing method of the light-emitting structure comprises the following steps:
1. an etching barrier layer 201, a first semiconductor layer 202, an active layer 203 and a second semiconductor layer 204 are sequentially formed on the silicon substrate 10, the etching is performed to the surface of the silicon substrate 10 along the second semiconductor layer 203 to form a cutting groove 23, and the etching is performed to the first semiconductor layer 202 along the second semiconductor layer 204 to form an isolation groove 24.
The first semiconductor layer, the active layer and the second semiconductor layer of the present invention are mainly made of gallium nitride material. Preferably, the etching barrier layer 201 includes a plurality of high aluminum layers and low aluminum layers formed alternately, the aluminum content of the high aluminum layers is 70-100%, and the aluminum content of the low aluminum layers is 30-60%.
Preferably, the etching barrier layer 201 is formed by alternately forming high aluminum layers and low aluminum layers in 2-20 periods, and the total thickness of the high aluminum layers and the low aluminum layers in each period is 10-200 nm. If the thickness of the etching barrier layer is less than 2 periods, the thickness is too thin, and the etching barrier layer cannot prevent corrosive solution from entering the epitaxy and chip materials when the substrate is removed; if the thickness of the etching barrier layer is greater than 20 cycles, the thickness is too thick, and light can be absorbed, thereby affecting the light extraction efficiency.
The utility model discloses a doping concentration of Al component in the control growth process adopts the mode that high low Al component concentration grows in turn, forms the formula of overlapping etching barrier layer.
Specifically, a MOCVD process is adopted, trimethyl aluminum, ammonia gas and protective gas are introduced, and the reaction gas ratio is adjusted to form a high aluminum layer and a low aluminum layer.
2. In order to improve the light extraction efficiency of the chip, a reflective layer 205 is deposited on the second semiconductor layer 204 by evaporation or sputtering, and the reflective layer 205 reflects light emitted from the active layer 204 to the first semiconductor layer 202 side for emission.
After the reflective layer 205 is formed, high-temperature annealing is performed in a nitrogen atmosphere to form an ohmic contact.
3. The passivation layer 206 is formed by plasma enhanced chemical vapor deposition, and is used for protecting the active layer exposed on the side wall of the light-emitting structure and preventing the chip from short circuit due to electric leakage.
4. A metal layer is deposited on the reflective layer 205 by evaporation or sputtering to form a first electrode 207 and a second electrode 208.
The metal layer is made of one or more of Ti, Ni, Co, Sn, Cu, Au, Pt, Cr and In. Preferably, the metal layer is formed by adopting a laminated metal deposition mode, and the internal stress between metals is effectively eliminated.
Secondly, referring to fig. 1, an organic insulating layer 30 is formed by spray coating or spin coating, and the organic insulating layer 30 covers the sidewalls of the first light emitting structure 21 and the second light emitting structure 22 and is filled in the isolation groove 24 to protect the light emitting structures. When the wet process corrodes the silicon substrate, the utility model discloses an organic insulating layer can protect light-emitting structure not corroded the destruction.
Thirdly, fixing the light-emitting structure on the jig;
referring to fig. 2b, the utility model discloses a tool 4 is equipped with and holds chamber 41 and with the hole 42 that holds chamber 41 intercommunication, the utility model discloses a tool 4 is used for fixed light-emitting structure 2.
Specifically, referring to fig. 2c, the step of fixing the light emitting structure on the fixture includes the following steps:
blocking the hole 42 and coating a layer of hot-melt adhesive 43 on the inner wall of the accommodating cavity 41;
the light emitting structure 20 is placed in the accommodating cavity 41, the light emitting structure 20 is fixed on the jig 4 by heating and pressurizing, and the hot-melt adhesive 43 in the accommodating cavity 41 is filled between the jig 4 and the light emitting structure 20 and in the cutting groove 23 under the heating and pressurizing conditions.
The utility model discloses scribble hot melt adhesive 43 in advance on special tool 4, light-emitting structure 20 is fixed on special tool 4 through hot melt adhesive 43 to make hot melt adhesive 43 fill in all gaps through the pressurized mode of heating, and cool off and make hot melt adhesive produce the solidification.
Preferably, the hot-melt adhesive is paraffin, polyethylene or polypropylene.
Removing the silicon substrate by adopting a method of physical grinding and chemical corrosion of a silicon corrosion solution;
referring to fig. 2d, grinding the silicon substrate by using a grinding wheel or other physical grinding methods to thin the silicon substrate 10 to a predetermined thickness; and removing the residual silicon substrate by using a silicon etching solution until the etching barrier layer 201 is exposed.
The utility model discloses a mode that the physics ground gets rid of most silicon substrate, can reduce the degree of difficulty that follow-up wet process removed silicon substrate, increases process window, raises the efficiency.
Preferably, the residual thickness of the silicon substrate after grinding is 50-200 μm. If the residual thickness of the silicon substrate after grinding is less than 50 μm, grinding and cracking are easily caused, and chips are lost; if the residual thickness of the ground silicon substrate is more than 200 mu m, the subsequent wet etching is affected, the etching is not thorough, the silicon substrate is difficult to remove, and the brightness of the wet etching process is reduced.
Preferably, the silicon etching solution is one or more of nitric acid, sulfuric acid, hydrofluoric acid, glacial acetic acid and phosphoric acid.
Fifthly, fixing the temporary substrate on the light-emitting structure;
referring to fig. 2e, an adhesive layer 51 is formed on the temporary substrate 50, and the adhesive layer 51 is attached to the exposed etching stop layer 202.
Preferably, the adhesive layer 51 is made of UV glue or thermal foaming glue. The temporary substrate 50 is a silicon wafer, a sapphire wafer, a glass wafer, or a metal wafer, and may be made of other hard materials.
And sixthly, removing the jig.
Referring to fig. 2f, the holes 22 are opened, the jig 4 is heated, and the heated hot-melt adhesive 43 flows out of the holes 22 to separate the light emitting structure 20 from the jig 4, so as to remove the jig 4, and further transfer the light emitting structure 20 to the temporary substrate 50.
It should be noted that, if a silicon-based micro LED chip is to be used subsequently, only ultraviolet light needs to be used to irradiate the temporary substrate 50, and the photoinitiator in the UV glue absorbs the ultraviolet light to generate polymerization, crosslinking, and grafting reactions, so as to reduce viscosity, thereby separating the chip from the temporary substrate.
The utility model discloses a silicon substrate replaces the sapphire substrate, has avoided the sapphire substrate because gallium nitride absorbs the N that the laser after decomposes the production when laser is peeled off2Damage to the gallium nitride material and the micro LED chip. In addition, the utility model discloses a two steps of physical grinding and chemical corrosionThe method removes the silicon substrate, can protect the light-emitting structure from being damaged while effectively removing the silicon substrate, improves the removal yield and reliability of the substrate, and provides important guarantee for the large-scale application of the micro LED chip in packaging, driving and displaying.
Because the utility model discloses a silicon substrate grows the gallium nitride epitaxial layer, reduces the lattice mismatch between silicon substrate and the gallium nitride epitaxial layer, the utility model discloses form one deck etching barrier layer between silicon substrate and first semiconductor layer. The utility model discloses the epitaxial lattice mismatch of silica-based can be reduced to the low aluminium lamination on sculpture barrier layer, reduces dislocation density, furtherly, the utility model discloses the sculpture barrier layer structure of formula of folding (high aluminium lamination and low aluminium lamination alternate growth) is favorable to epitaxial stress's matching to be adjusted, improves the crystal quality. In addition, when the micro LED chip is subjected to original silicon substrate wet etching, the high aluminum layer of the etching barrier layer can prevent the infiltration of an etching solution and protect GaN epitaxy from being attacked by the etching solution.
The utility model discloses a cut the luminous structure that the epitaxial material cutting that the groove will be on silicon substrate formed a plurality of independent sizes and is less than 100 mu m, makes every miniature LED chip form independent device each other, and the back is got rid of to the silicon substrate, and each miniature LED chip just can autosegregation, has effectively solved the problem that the miniature LED that the size is less than 100 mu m can't cut the separation.
The utility model discloses and fall into first light-emitting structure and second light-emitting structure with light-emitting structure through the isolation groove, form first electrode on first light-emitting structure, form the second electrode on second light-emitting structure, can make first electrode and second electrode be in on same plane completely like this, guarantee chip welded reliability, reduce the void ratio.
The utility model discloses an organic insulation layer protects the chip, guarantees that the in-process chip inner structure and the metal level that silicon substrate wet corrosion got rid of are not destroyed by corrosive solution.
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (7)
1. A silicon-based micro LED chip is characterized by comprising a silicon substrate, a plurality of light-emitting structures, cutting grooves and an organic insulating layer, wherein the cutting grooves are arranged among the light-emitting structures;
the light-emitting structure comprises an etching barrier layer, a first semiconductor layer, an active layer, a second semiconductor layer, an isolation groove, a first electrode and a second electrode, wherein the etching barrier layer is arranged between a silicon substrate and the first semiconductor layer, the isolation groove is etched to the first semiconductor layer to divide the light-emitting structure into a first light-emitting structure and a second light-emitting structure, the first electrode is arranged on the first light-emitting structure and extends to the first semiconductor layer, the second electrode is arranged on the second light-emitting structure, the etching barrier layer comprises a plurality of high aluminum layers and low aluminum layers which are alternately formed, and the aluminum content of the high aluminum layers is higher than that of the low aluminum layers;
the organic insulating layer covers the side walls of the first light-emitting structure and the second light-emitting structure and is filled in the isolation groove to protect the light-emitting structures.
2. The silicon-based micro LED chip of claim 1, wherein each period comprises at least one high aluminum layer and at least one low aluminum layer.
3. The silicon-based micro LED chip of claim 2, wherein the total thickness of the high aluminum layer and the low aluminum layer per period is 10 to 200 nm.
4. The silicon-based micro LED chip according to claim 3, wherein the etching barrier layer is formed by alternately forming high aluminum layers and low aluminum layers for 2-20 periods.
5. The silicon-based micro LED chip of claim 1, wherein the light emitting structure further comprises a reflective layer disposed on the second semiconductor layer to reflect light emitted from the active layer to one side of the etch stop layer to exit, and a passivation layer disposed on a sidewall of the second light emitting structure to isolate the first light emitting structure from the second light emitting structure.
6. The silicon-based micro LED chip of claim 1, wherein the organic insulating layer is made of an organic insulating material.
7. The silicon-based micro LED chip of claim 6, wherein the organic insulating layer is made of a material selected from the group consisting of silicon, photoresist, resin, and polyimide.
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| CN201921999200.7U CN210805776U (en) | 2019-11-18 | 2019-11-18 | Silicon-based micro LED chip |
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| CN201921999200.7U CN210805776U (en) | 2019-11-18 | 2019-11-18 | Silicon-based micro LED chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854154A (en) * | 2019-11-18 | 2020-02-28 | 佛山市国星半导体技术有限公司 | Silicon-based micro LED chip and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854154A (en) * | 2019-11-18 | 2020-02-28 | 佛山市国星半导体技术有限公司 | Silicon-based micro LED chip and manufacturing method thereof |
| CN110854154B (en) * | 2019-11-18 | 2024-04-30 | 佛山市国星半导体技术有限公司 | Silicon-based miniature LED chip and manufacturing method thereof |
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