CN101984509B - Method for forming blue LED flip chip - Google Patents
Method for forming blue LED flip chip Download PDFInfo
- Publication number
- CN101984509B CN101984509B CN 201010299089 CN201010299089A CN101984509B CN 101984509 B CN101984509 B CN 101984509B CN 201010299089 CN201010299089 CN 201010299089 CN 201010299089 A CN201010299089 A CN 201010299089A CN 101984509 B CN101984509 B CN 101984509B
- Authority
- CN
- China
- Prior art keywords
- layer
- led chip
- substrate
- transition zone
- down mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention provides a method for forming a blue LED flip chip, which comprises the following steps: providing a substrate and forming a transition layer on the substrate; forming a GaN layer on the transition layer, wherein, the transition layer is matched with the lattice constant of the GaN layer; forming an LED core on the GaN layer; forming a positive electrode and a negative electrode; and optionally etching off the transition layer, and peeling the substrate to form the blue LED flip chip. In the method for forming the blue LED flip chip, the transition layer is formed between the substrate and the GaN layer; after the LED chip is formed, the transition layer is optionally etched off so as to peel off the substrate and the LED chip; and while optionally etching off the transition layer, an active layer is not lost and the performance of the LED chip is not lowered.
Description
Technical field
The present invention relates to field of semiconductor illumination, relate in particular to a kind of method that forms the upside-down mounting blue-light LED chip.
Background technology
Semiconductor light-emitting-diode is LED (Light Emitting Diode), is a kind of semiconductor solid luminescence device.It is to utilize the solid semiconductor chip as luminescent material, in semiconductor, through charge carrier compound energy of emitting surplus takes place and causes photo emissions, directly sends light red, yellow, blue, green, blue or green, orange, purple isochrome.
Blue-ray LED adopts Al usually
2O
3Sapphire Substrate, Sapphire Substrate hardness height, thermal conductivity and conductivity are low.If adopt positive assembling structure, can bring the problem of static on the one hand, on the other hand, under big current conditions, can bring heat dissipation problem.In addition, because front electrode, can cover a part of light up, luminous efficiency can reduce.High-power blue-ray LED can obtain more effectively bright dipping than traditional encapsulation technology through flip-chip technology (flip chip).
Fig. 1 is the sketch map of existing a kind of upside-down mounting blue-light LED chip; Only shown a LED unit among the figure, with reference to figure 1, upside-down mounting blue chip 10 is connected with welding panel 20 with negative electrode 17 through positive electrode 16; The material of welding panel 20 is Si or Al or Cu; When on positive electrode 16 and negative electrode 17, applying voltage, active layer 12 stimulated luminescences, the light that sends to the front penetrates chips through resilient coating 13 and truncation inverted pyramid shape GaN layer 15; The light that sends to the back side is reflected by reflector 14 behind cap layer 11, penetrates chip via active layer 12, resilient coating 13 and the reflection of truncation inverted pyramid shape GaN layer and refraction back.
Fig. 2 is the method for the formation upside-down mounting blue-light LED chip of prior art, with reference to figure 2, in the prior art; The method that forms upside-down mounting blue-light LED chip shown in Figure 1 does; After forming blue-light LED chip on the Sapphire Substrate 18, its upside-down mounting on welding panel 20, is connected with welding panel 20 with negative electrode 17 through positive electrode 16; Use laser 30 along the whole Sapphire Substrate 18 of arrow 40 scanning directions then; Laser 30 passes Sapphire Substrate 18 and arrives truncation inverted pyramid shape GaN layer 15, and with the GaN thermal decomposition at high temperature in the truncation inverted pyramid shape GaN layer 15, the composition nitrogen (N) among the GaN becomes gas and discharges; Composition gallium (Ga) among the GaN becomes liquid state, thereby reaches the purpose that Sapphire Substrate is separated with truncation inverted pyramid shape GaN layer 15.
Yet, utilize the method for above-described formation upside-down mounting blue-light LED chip, with the laser radiation led chip time, laser can get into active layer, and active layer is caused damage, thereby can influence the performance of led chip.
In March, 2009, the notification number of Granted publication on the 11st disclosed a kind of " preparation method of LED flip-chip " for the Chinese patent of " CN100468796C ", yet, do not solve above-described technical problem yet.
Summary of the invention
The problem that the present invention solves is the method for the formation upside-down mounting blue-light LED chip of prior art, damages active layer easily.
For addressing the above problem, the present invention provides a kind of method that forms the upside-down mounting blue-light LED chip, comprising:
Substrate is provided;
On said substrate, form transition zone;
On said transition zone, form the GaN layer, and said transition zone and said GaN layer lattice constant match;
Tube core on said GaN layer;
Form positive electrode, negative electrode;
Selective etch falls said transition zone, with said substrate desquamation, forms the blue-light LED chip of treating upside-down mounting.
Optional, said tube core comprises: be formed at n-GaN resilient coating, active layer, p-GaN cap layer on the said GaN layer successively, said buffer layer part and said active layer, cap is range upon range of adds.
Optional, said GaN layer is the truncation pyramid.
Optional, also comprise: after forming the cap layer, on said cap layer, form metal contact layer;
Said positive electrode is formed on the said metal contact layer, and said negative electrode is formed on the said resilient coating.
Optional, before forming transition zone on the said substrate, also comprise:
On said substrate, form mask layer;
Graphical said mask layer defines the LED unit;
On said substrate, forming transition zone comprises:
On the LED unit that defines on the said substrate, form transition zone.
Optional, the material of said transition zone is a boron phosphide.
Optional, the method for said formation transition zone is a hydride gas-phase epitaxy.
Optional, the said method that on said transition zone, forms the GaN layer is a metal-organic chemical vapor deposition equipment.
Optional, fall said transition zone at selective etch, before said substrate desquamation, also comprise:
Form photoresist layer, coat said substrate, transition zone, GaN layer, resilient coating, active layer, cap layer, positive electrode and negative electrode;
Graphical said photoresist layer, the side of exposing said transition zone; After exposing the side of said transition zone, said selective etch falls said transition zone, and said substrate desquamation is comprised:
Fall transition zone with hydrogen chloride gas from the side selective etch of said transition zone, with said substrate desquamation.
Optional, on said resilient coating, form negative electrode and comprise:
On the surface that said substrate, metal contact layer and resilient coating form, form photoresist layer;
Graphical said photoresist layer, formation is positioned at the perforate on the resilient coating on said lithography layer, defines the position of negative electrode;
With said patterned photoresist layer is mask, deposits conductive material in said perforate;
Photoresist is removed in ashing, and the electric conducting material on the photoresist layer is stripped from, and removes the electric conducting material of being stripped from, and the electric conducting material in the said perforate is as negative electrode.
Optional, said electric conducting material is Ti or Al or Au.
Optional, the said positive electrode that on said metal contact layer, forms comprises:
On the surface that said substrate, metal contact layer and resilient coating form, form photoresist layer;
Graphical said photoresist layer is positioned at perforate on the said metal contact layer in formation on the said lithography layer, defines the position of positive electrode;
With said patterned photoresist layer is mask, and deposits conductive material is on said photoresist layer and in the said perforate;
Photoresist layer is removed in ashing, and the electric conducting material on the photoresist layer is stripped from, and removes the electric conducting material of being stripped from, and the electric conducting material in the said perforate is as positive electrode.
Optional, said electric conducting material is Al.
Optional, the method for said formation tube core comprises:
On said GaN layer, form n-GaN resilient coating, active layer, p-GaN cap layer, metal contact layer successively with metal-organic chemical vapor deposition equipment;
On said metal contact layer, form photoresist layer;
Graphical said photoresist layer exposes the metal contact layer of marginal portion;
With said patterned photoresist layer is mask, and etching is removed active layer, cap layer, metal contact layer successively, makes said buffer layer part and said active layer, cap layer, metal contact layer stack.
Optional, said substrate is a Sapphire Substrate.
Optional, also comprise:
With the said blue-light LED chip upside-down mounting of treating upside-down mounting on the welding panel;
On the GaN layer, form photoresist layer;
Graphical photoresist layer utilizes patterned photoresist layer to form photonic crystal for mask dry etching GaN layer.
Compared with prior art, the present invention has the following advantages:
The method of formation upside-down mounting blue-light LED chip of the present invention; Through between substrate and GaN layer, forming transition zone, after led chip forms, utilize selective etch to erode transition zone; Substrate and led chip are peeled off; When selective etch erodes transition zone, can not lose active layer, can not reduce the performance of led chip.
Description of drawings
Fig. 1 is the sketch map of existing a kind of upside-down mounting blue-light LED chip;
Fig. 2 is the method for the formation upside-down mounting blue-light LED chip of prior art;
Fig. 3 is the flow chart of method of the formation upside-down mounting blue-light LED chip of the specific embodiment of the invention;
Fig. 4 a～Fig. 4 o is the cross-sectional view of method of the formation upside-down mounting blue-light LED chip of the specific embodiment of the invention.
Embodiment
The method of the formation upside-down mounting blue-light LED chip of the specific embodiment of the invention through between substrate and GaN layer, forming transition zone, after led chip forms, utilizes selective etch to erode transition zone, and substrate and led chip are peeled off.
In order to make those skilled in the art can better understand the present invention, specify specific embodiment of the present invention below in conjunction with accompanying drawing.
Fig. 3 is the flow chart of method of the formation upside-down mounting blue-light LED chip of the specific embodiment of the invention, and with reference to figure 3, the method for the formation upside-down mounting blue-light LED chip of the specific embodiment of the invention comprises:
Step S1 provides substrate;
Step S2 forms transition zone on said substrate;
Step S3 forms the GaN layer on said transition zone, this GaN layer is the truncation pyramid, and said transition zone and said GaN layer lattice constant match;
Step S4 forms tube core on said GaN layer;
Step S5 forms positive electrode, negative electrode;
Step S6, selective etch fall said transition zone, and said substrate and said tube core are peeled off, and form the blue-light LED chip of treating upside-down mounting.
Fig. 4 a～Fig. 4 o is the cross-sectional view of method of the formation upside-down mounting blue-light LED chip of the specific embodiment of the invention, specifies the method for the formation upside-down mounting blue-light LED chip of the specific embodiment of the invention below in conjunction with Fig. 3 and Fig. 4 a～Fig. 4 o.
In conjunction with reference to figure 3 and Fig. 4 a, execution in step S1 provides substrate 40.Substrate 40 can be carborundum SiC substrate, sapphire (Al
2O
3) substrate or silicon substrate, in specific embodiment of the present invention, adopt sapphire (Al
2O
3) substrate.
With reference to figure 4b and Fig. 4 c, Fig. 4 c is the schematic top plan view of Fig. 4 b, in the specific embodiment of the invention, before execution in step S2, promptly before forming transition zone on the said substrate 40, also comprises: on said substrate 40, form mask layer 41; Graphical said mask layer 41 defines LED unit 42.Be specially, deposition mask layer 41 on substrate 40 forms photoresist layer on mask layer 41, graphical photoresist layer; With patterned lithography layer is mask etching mask layer 41, forms patterned mask layer, defines LED unit 42; Remove photoresist with cineration technics afterwards, only illustrate mask layer and not shown photoresist layer among the figure; This is a general knowledge known in this field, even do not do explanation, those skilled in the art also are appreciated that.In the specific embodiment of the invention, the material of mask layer 41 is silicon dioxide (SiO
2), in other embodiments, can be silicon nitride (Si
3N
4), and well known to a person skilled in the art other materials.
In conjunction with reference to figure 3 and Fig. 4 d, execution in step S2 forms transition zone 43 on said substrate 40.In the specific embodiment of the invention; Comprise at formation transition zone 43 on the said substrate 40: form transition zone 43 on the LED unit that is defining on the substrate; Be that transition zone 43 is formed at respectively on each LED unit, between each LED unit, separate, in the specific embodiment of the invention through mask layer 41; The material of transition zone 43 is a boron phosphide, and the method for said formation transition zone 43 is a hydride gas-phase epitaxy.The thickness of transition zone 43 is below 10 nanometers (nm).
In conjunction with reference to figure 3 and Fig. 4 e, execution in step S3 forms GaN layer 44 on said transition zone 43; This GaN layer 44 is the truncation pyramid, and said transition zone 43 and said GaN layer 44 lattice constant match, can make when transition zone 43 and said GaN layer 44 lattice constant match when on transition zone 43, forming GaN; Can not produce fault, improve the yield of led chip, in addition; After the erosion removal transition zone time, transition zone and GaN layer have good selective corrosion ratio, can guarantee that like this GaN is not corroded; Wherein, the method for formation GaN layer 44 is a metal-organic chemical vapor deposition equipment on transition zone 43.In other embodiments of the invention, the GaN layer also can be for well known to a person skilled in the art other shapes, for example tabular.
In conjunction with reference to figure 3 and Fig. 4 f, Fig. 4 g; Execution in step S4, tube core on said GaN layer 44, wherein; Said tube core comprises: form n-GaN resilient coating 45, active layer 46, p-GaN cap layer 47 successively, said resilient coating 45 parts and said active layer 46,47 stack of cap layer.
With reference to figure 4f, on said GaN layer 44, form n-GaN resilient coating 45, active layer 46, p-GaN cap layer 47 successively, in the specific embodiment of the invention, after forming cap layer 47, on said cap layer 47, form metal contact layer 48.In the specific embodiment of the invention, the method that forms n-GaN resilient coating 45, active layer 46, p-GaN cap layer 47 is metal-organic chemical vapor deposition equipment (MOCVD), and the method that forms metal contact layer 48 is a physical vapor deposition (PVD).The material of metal contact layer 48 is Ni or Au or Al, and well known to a person skilled in the art other technologies.
With reference to figure 4g; After forming n-GaN resilient coating 45, active layer 46, p-GaN cap layer 47 and metal contact layer 48, on metal contact layer 48, form the photoresist layer (not shown), utilize the graphical photoresist layer of photoetching process; Be mask etching metal contact layer 48, p-GaN cap layer 47 and active layer 46 successively with patterned photoresist layer afterwards; With exposed portions serve n-GaN resilient coating 45, in the specific embodiment of the invention, expose the marginal portion 451 of n-GaN resilient coating 45; Just make said resilient coating 45 parts and said active layer 46, cap layer 47, metal contact layer 48 stacks; With the marginal portion of the n-GaN resilient coating 45 of active layer 46, cap layer 47, metal contact layer 48 stacks, the technology after being used for does not form negative electrode above that.
In conjunction with reference to figure 3 and Fig. 4 h, Fig. 4 i, Fig. 4 j, execution in step S5 forms positive electrode 53, negative electrode 52.
In the specific embodiment of the invention, negative electrode 52 is formed on said resilient coating not and said active layer, the range upon range of part that adds of cap, the i.e. marginal portion 451 of resilient coating.The method that forms negative electrode 52 is specially: with reference to figure 4h, and formation photoresist layer 49 (in order to simplify view, the photoresist layer of the substrate surface that do not draw among the figure) on the surface of said substrate 40, metal contact layer 48 and resilient coating 45 formation; Graphical said photoresist layer 49 is positioned at the perforate 50 on the said resilient coating in formation on the said lithography layer, defines the position of negative electrode; With said patterned photoresist layer 49 is mask, and deposits conductive material 51 is on said photoresist layer 49 and in the said perforate 50; With reference to figure 4i, photoresist layer 49 is removed in ashing, after photoresist layer 49 is removed in ashing; Electric conducting material 51 on the photoresist layer 49 is stripped from; That is to say that after photoresist layer 49 was removed by ashing, electric conducting material 51 natures separated with lower floor (promptly separating with metal contact layer 48); Can remove the electric conducting material of being stripped from this moment, with the electric conducting material in the said perforate as negative electrode 52.In the specific embodiment of the invention, said electric conducting material is Ti or Al or Au.
Need to prove; In other embodiments of the invention; The method of said formation negative electrode; Also can be deposition one deck conductive layer on the surface that forms at substrate 40, metal contact layer 48 and resilient coating 45, the material of conductive layer is Ti or Al or Au, and the etching conductive layer forms negative electrode 52 then.
In the specific embodiment of the invention, on said metal contact layer 48, form positive electrode 53.The method that forms positive electrode 53 comprises: on the surface that said substrate 40, metal contact layer 48 and resilient coating 45 form, form photoresist layer; Graphical said photoresist layer is positioned at the perforate on the metal contact layer 48 in formation on the said lithography layer, defines the position of positive electrode; With said patterned photoresist layer is mask, and deposits conductive material is on said photoresist layer and in the said perforate; Photoresist layer is removed in ashing; Electric conducting material on the photoresist layer is stripped from; That is to say that after photoresist layer 49 was removed by ashing, electric conducting material 51 natures separated with lower floor (promptly separating with metal contact layer 48); Can remove the electric conducting material of being stripped from this moment, with the electric conducting material in the said perforate as positive electrode 53.Said electric conducting material is Al.Among the figure; Not such as forming negative electrode, the deposition process of photoresist layer and electric conducting material is shown, those skilled in the art are according to the instruction of formation negative electrode; Can clearly know the method that forms positive electrode, so and too much details not shown in the diagram.
Need to prove; In other embodiments of the invention, the method for said formation positive electrode also can be deposition one deck conductive layer on the surface that forms at said substrate 40, metal contact layer 48 and resilient coating 45; The material of conductive layer is Al, and the etching conductive layer forms positive electrode 53 then.
In conjunction with reference to figure 3 and Fig. 4 k, Fig. 4 l, execution in step S7, selective etch fall said transition zone 43, and said substrate 40 is peeled off, and remove the substrate 40 of being stripped from, and form the blue-light LED chip of treating upside-down mounting.In specific embodiment of the present invention; Fall said transition zone 43 at selective etch; Before said substrate 40 peeled off; Also comprise: form photoresist layer, coat said substrate 40, transition zone 43, GaN layer 44, resilient coating 45, active layer 46, cap layer 47, positive electrode 53 and negative electrode 52 (among the figure and not shown photoresist layer); Graphical said photoresist layer, the side of exposing said transition zone 43.Behind the side of exposing said transition zone 43, fall transition zone 43 with hydrogen chloride (Hcl) gas from the side selective etch of said transition zone 43, said substrate 40 is peeled off.In specific embodiment of the present invention, HCl gas flow rate: 50～500sccm, 20～80 ℃ of temperature, pressure: 0.1～10Torr.Need to prove that what Fig. 4 k showed is the process of etching transition zone 43, i.e. a kind of view of also not etched away fully of transition zone 43; Fig. 4 l has demonstrated; After transition zone 43 was etched away fully, substrate 40 was stripped from, after the substrate of being stripped from 40 is removed; Photoresist is removed in ashing, forms the blue-light LED chip of treating upside-down mounting.
In the specific embodiment of the invention; After forming the upside-down mounting blue-light LED chip, with reference to figure 4m, with the blue-light LED chip upside-down mounting of treating upside-down mounting; Be about to treat that the blue-light LED chip of upside-down mounting is connected with welding panel 60; Can make the upside-down mounting blue-light LED chip luminous this moment through control welding panel, and wherein, the material of welding panel 60 is Si or Al or Cu.
In the specific embodiment of the invention, behind the completion upside-down mounting blue-light LED chip,,, be the schematic top plan view of upside-down mounting blue-light LED chip simultaneously with reference to figure 4o with reference to figure 4n, in order to increase light emission rate, on GaN layer 44, form photonic crystal 441, photonic crystal 441 is cylindric.The concrete technology that forms photonic crystal is: at first on GaN layer 44, form photoresist layer, graphical then photoresist layer utilizes patterned photoresist layer to form photonic crystal 441 for mask dry etching GaN layer 44 afterwards.Adopt photonic crystal can make light pass through the direct bright dipping of different surface and light after changing critical angle after the photonic crystal sidewall reflects from another sidewall bright dipping.The technology that forms photonic crystal is fairly simple, just can realize through photoetching and dry process reaction ion etching.
The method of formation upside-down mounting blue-light LED chip of the present invention; Through between substrate and GaN layer, forming transition zone, after led chip forms, utilize selective etch to erode transition zone; Substrate and led chip are peeled off; When selective etch erodes transition zone, can not lose active layer, can not reduce the performance of led chip.
Need to prove; Transition zone that forms among the present invention and GaN layer are the truncation pyramid, it are not carried out detailed description in the text, about more detailed method; Can list of references " Jung-Tsung Hsu; Wen-Yung Yeh, Chang-Cheng Chuo, Jenq-Dar Tsay; Chih-ShuHuang; and Chao-Ying Lin, Beveled sidewall formation and its effect on the lightoutput of a GaInN multiquantum well light-emitting diode with sapphire substrate, Opt.Eng./Volume 44/Issue 11/Special Section on Solid State Lighting ".
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (15)
1. method that forms the upside-down mounting blue-light LED chip is characterized in that comprising:
Substrate is provided;
On said substrate, form transition zone;
On said transition zone, form the GaN layer, and said transition zone and said GaN layer lattice constant match;
On said GaN layer, form tube core;
Form positive electrode, negative electrode;
Form photoresist layer, coat said substrate, transition zone, GaN layer, resilient coating, active layer, cap layer, positive electrode and negative electrode;
Graphical said photoresist layer, the side of exposing said transition zone;
After exposing the side of said transition zone, fall transition zone with hydrogen chloride gas from the side selective etch of said transition zone, with said substrate desquamation, form the blue-light LED chip of treating upside-down mounting.
2. the method for formation upside-down mounting blue-light LED chip as claimed in claim 1; It is characterized in that; Said tube core comprises: be formed at n-GaN resilient coating, active layer, p-GaN cap layer on the said GaN layer successively, said buffer layer part and said active layer, cap is range upon range of adds.
3. the method for formation upside-down mounting blue-light LED chip as claimed in claim 1 is characterized in that, said GaN layer is the truncation pyramid.
4. the method for formation upside-down mounting blue-light LED chip as claimed in claim 2 is characterized in that, also comprises: after forming the cap layer, on said cap layer, form metal contact layer;
Said positive electrode is formed on the said metal contact layer, and said negative electrode is formed on the said resilient coating.
5. the method for formation upside-down mounting blue-light LED chip as claimed in claim 1 is characterized in that, before forming transition zone on the said substrate, also comprises:
On said substrate, form mask layer;
Graphical said mask layer defines the LED unit;
Comprise at formation transition zone on the said substrate: the LED unit that on said substrate, defines forms transition zone.
6. like the method for claim 1 or 5 described formation upside-down mounting blue-light LED chips, it is characterized in that the material of said transition zone is a boron phosphide.
7. the method for formation upside-down mounting blue-light LED chip as claimed in claim 6 is characterized in that, the method for said formation transition zone is a hydride gas-phase epitaxy.
8. the method for formation upside-down mounting blue-light LED chip as claimed in claim 1 is characterized in that, the said method that on said transition zone, forms the GaN layer is a metal-organic chemical vapor deposition equipment.
9. the method for formation upside-down mounting blue-light LED chip as claimed in claim 4 is characterized in that, on said resilient coating, forms negative electrode and comprises:
On the surface that said substrate, metal contact layer and resilient coating form, form photoresist layer;
Graphical said photoresist layer, formation is positioned at the perforate on the resilient coating on said lithography layer, defines the position of negative electrode;
With said patterned photoresist layer is mask, deposits conductive material in said perforate;
Photoresist is removed in ashing, and the electric conducting material on the photoresist layer is stripped from, and removes the electric conducting material of being stripped from, and the electric conducting material in the said perforate is as negative electrode.
10. the method for formation upside-down mounting blue-light LED chip as claimed in claim 9 is characterized in that, said electric conducting material is Ti or Al or Au.
11. the method for formation upside-down mounting blue-light LED chip as claimed in claim 4 is characterized in that, the said positive electrode that on said metal contact layer, forms comprises:
On the surface that said substrate, metal contact layer and resilient coating form, form photoresist layer;
Graphical said photoresist layer is positioned at the perforate on the said metal contact layer in formation on the said lithography layer, defines the position of positive electrode;
With said patterned photoresist layer is mask, and deposits conductive material is on said photoresist layer and in the said perforate;
Photoresist layer is removed in ashing, and the electric conducting material on the photoresist layer is stripped from, and removes the electric conducting material of being stripped from, and the electric conducting material in the said perforate is as positive electrode.
12. the method for formation upside-down mounting blue-light LED chip as claimed in claim 11 is characterized in that, said electric conducting material is Al.
13. the method for formation upside-down mounting blue-light LED chip as claimed in claim 4 is characterized in that, the formation method of said tube core comprises:
On said GaN layer, form n-GaN resilient coating, active layer, p-GaN cap layer, metal contact layer successively with metal-organic chemical vapor deposition equipment;
On said metal contact layer, form photoresist layer;
Graphical said photoresist layer exposes the metal contact layer of marginal portion;
With said patterned photoresist layer is mask, and etching metal contact layer, p-GaN cap layer and active layer make said buffer layer part and said active layer, cap layer, metal contact layer stack successively.
14. the method for formation upside-down mounting blue-light LED chip as claimed in claim 1 is characterized in that, said substrate is a Sapphire Substrate.
15. the method for formation upside-down mounting blue-light LED chip as claimed in claim 1 is characterized in that, also comprises:
With the said blue-light LED chip upside-down mounting of treating upside-down mounting on the welding panel;
On the GaN layer, form photoresist layer;
Graphical photoresist layer utilizes patterned photoresist layer to form photonic crystal for mask dry etching GaN layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010299089 CN101984509B (en) | 2010-09-28 | 2010-09-28 | Method for forming blue LED flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010299089 CN101984509B (en) | 2010-09-28 | 2010-09-28 | Method for forming blue LED flip chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101984509A CN101984509A (en) | 2011-03-09 |
| CN101984509B true CN101984509B (en) | 2012-07-04 |
Family
ID=43641679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010299089 Expired - Fee Related CN101984509B (en) | 2010-09-28 | 2010-09-28 | Method for forming blue LED flip chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101984509B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299243A (en) * | 2011-09-14 | 2011-12-28 | 青岛理工大学 | Thin film flip chip photonic crystal light-emitting diode (LED) chip and manufacturing method thereof |
| CN107863423A (en) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | The patterned preparation method of LED flip chip sapphire exiting surface |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4770513B2 (en) * | 2006-02-27 | 2011-09-14 | 豊田合成株式会社 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
| JP2008306021A (en) * | 2007-06-08 | 2008-12-18 | Ushio Inc | Manufacturing method for led chip |
| JP2009231595A (en) * | 2008-03-24 | 2009-10-08 | Oki Data Corp | Method of manufacturing semiconductor device |
| CN101651176A (en) * | 2008-08-12 | 2010-02-17 | 昆山中辰硅晶有限公司 | Method for manufacturing semiconductor optoelectronic element and method for recovering substrate in manufacturing process |
| CN101494267B (en) * | 2008-11-24 | 2010-09-29 | 厦门市三安光电科技有限公司 | Preparation method for gallium nitride base light-emitting device based on substrate desquamation |
-
2010
- 2010-09-28 CN CN 201010299089 patent/CN101984509B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101984509A (en) | 2011-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4999696B2 (en) | GaN-based compound semiconductor light emitting device and manufacturing method thereof | |
| US8941124B2 (en) | Semiconductor light emitting device and method for manufacturing same | |
| US9530936B2 (en) | Light emitting diode having vertical topology and method of making the same | |
| JP5286045B2 (en) | Manufacturing method of semiconductor light emitting device | |
| CN102130285B (en) | Light emitting diode and manufacturing method thereof | |
| US8791480B2 (en) | Light emitting device and manufacturing method thereof | |
| US9337388B2 (en) | Method for producing a semiconductor layer sequence, radiation-emitting semiconductor chip and optoelectronic component | |
| US20120074384A1 (en) | Protection for the epitaxial structure of metal devices | |
| US8829538B2 (en) | Light emitting device package | |
| US20110155997A1 (en) | Vertical Light emitting diode and manufacturing method of the same | |
| US20120074383A1 (en) | Device of light-emitting diode | |
| US9306122B2 (en) | Light emitting diode and a manufacturing method thereof, a light emitting device | |
| CN103682012A (en) | Deep UV (Ultraviolet) LED and preparation method thereof | |
| JP2013034010A (en) | Vertical light-emitting device | |
| TW201312792A (en) | Light emitting diode structure and method for manufacturing the same | |
| CN108365078B (en) | A kind of 3D through-hole superstructure LED chip and preparation method thereof | |
| KR100762003B1 (en) | Method of manufacturing vertically structured nitride type light emitting diode | |
| CN104993031B (en) | High pressure flip LED chips and its manufacture method | |
| KR101734550B1 (en) | Light emitting device and light emitting device package | |
| US8945958B2 (en) | Methods for manufacturing light emitting diode and light emitting device | |
| CN101984509B (en) | Method for forming blue LED flip chip | |
| CN101286539A (en) | Gallium nitride based small-chip LED array structure and preparing method thereof | |
| US8664020B2 (en) | Semiconductor light emitting device and method of manufacturing the same | |
| CN103840073B (en) | Inverted light-emitting diode (LED) device and its manufacture method | |
| CN103390709A (en) | Light-emitting diode with dual-function electrodes and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20200928 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |